UCSB Nanofab Wiki - User contributions [en]

Sputtering Recipes

2014-05-21T15:42:55Z

Abrahamsen: /* Sputter 4 (AJA ATC 2200-V) */

{{recipes|Vacuum Deposition}}
=[[Sputter 1 (Custom)]]=
=[[Sputter 2 (SFI Endeavor)]]=
== Al Deposition (Sputter 2) ==
*[[media:20-Al-Sputtering-Film-Sputter-2.pdf|Al Deposition Recipe]]
== AlNx Deposition (Sputter 2) ==
*[[media:19-AlN-Sputtering-Film-Sputter-2.pdf|AlNx Deposition Recipe]]
== Au Deposition (Sputter 2) ==
*[[media:21-Au-Sputter-film-recipes-Sputter-2.pdf|Au Deposition Recipe]]
== TiO2 Deposition (Sputter 2) ==
*[[media:22-TiO2-Film-Sputter-2.pdf|TiO22 Deposition Recipe]]

=[[Sputter 3 (AJA ATC 2000-F)]]=

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

{| class="wikitable sortable"
|-
! Material !! P(mT) !! Pow(W) !! Sub(W) !! T(C) !! Ar !! N2 !! O2 !! Height-Tilt !! Rate(nm/min) !! Stress(MPa) !! Rs(uOhm-cm) !! n@633nm !! k@633nm !! Data Below !! Comment
|-
| Ni || 5 || 150 || 0 || 20 || 25 || 0 || 0 || 44-4 || 5.23 || - || - || - || - || yes || Ning
|-
| Ni || 5 || 150 || 0 || 20 || 25 || 0 || 0 || 25-9 || 1.82 || - || - || - || - || yes || Ning
|-
| Ni || 5 || 75 || 0 || 20 || 25 || 0 || 0 || 44-4 || 2.50 || - || - || - || - || yes || Ning
|-
| Ta || 5 || 150 || 0 || 20 || 25 || 0 || 0 || 44-4 || 9.47 || - || - || - || - || yes || Ning
|-
| Ta || 5 || 75 || 0 || 20 || 25 || 0 || 0 || 44-4 || 5.03 || - || - || - || - || yes || Ning
|-
| SampleClean-NativeSiO2 || 10 || 0 || 18 || 20 || 25 || 0 || 0 || 44-4 || - || - || - || - || - || yes || 150Volts 5 min
|-
|}

== Ni and Ta Deposition (Sputter 3) ==
*[[media:24-Ni_and_Ta_Films_using_Sputter-3.pdf|Ni and Ta Deposition Recipe]]

=[[Sputter 4 (AJA ATC 2200-V)]]=

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

{| class="wikitable sortable"
|-
! Material !! P(mT) !! Pow(W) !! Sub(W) !! T(C) !! Ar !! N2 !! O2 !! Height-Tilt !! Rate(nm/min) !! Stress(MPa) !! Rs(uOhm-cm) !! n@633nm !! k@633nm !! Data Below !! Comment
|-
| W || 3 || 300 || 0 || 50 || 45 || 0 || 0 || H2.75-T5 || 11.5 || -150 to 150 || 11 || - || - || Yes || Jeremy Watcher
|-
| TiW || 4.5 || 300 || 0 || 75 || 45 || 0 || 0 || H2.75-T5 || 9.5 || -150 to 150 || 60 || - || - || Yes || 10%Ti by Wt
|-
| TiN || 4 || 250 || 0 || 250 || 20 || 10 || 0 || H2.00-T7 || 1.9 || - || - || - || - || No ||
|-
| Nb || 4 || 250 || 0 || 20 || 30 || 0 || 0 || H2.00-T7 || 7.5 || - || - || - || - || No ||
|-
|}
== W-TiW Deposition (Sputter 4) ==
*[[media:W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf|W-TiW Deposition Recipe]]

=[[Sputter 5 (Lesker AXXIS)]]=
=[[Ion Beam Deposition (Veeco NEXUS)]]=
[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.

'''All users are required to enter their calibration deps (simple test deps only)'''

==SiO{{sub|2}} deposition (IBD)==
*[[media: New IBD SiO2 Standard Recipe.pdf |SiO2 Standard Recipe]]
*[[media:IBD SiO2 Data April 2014 IBD SIO2 Data.pdf|SiO2 Data 2014 (Deposition Rate, Refractive Index, Stress, HF etch rate )]]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO2 Data April 2014]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=0=sharing SiO2 Thickness uniformity 2014]
*Deposition Rate: ≈ 5.47 nm/min (users must calibrate this prior to critical deps)
*Refractive Index: ≈ 1.487
*Stress ≈ -373MPa (compressive)

==Si3N4 deposition (IBD)==
*[[media:IBD SiNdeposition.pdf|Si3N4 Standard Recipe]]
*[[media:New IBD SiN Data April 2014 IBD SIN data 2014.pdf|Si3N4 Data 2014 (Deposition Rate, Refractive Index, Stress, HF etch rate )]]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si3N4 Data April 2014]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si3N4 Thickness uniformity 2014]
* Deposition Rate ≈ 4.13nm/min (users must calibrate this prior to critical deps)
* Refractive Index ≈ 1.972
* Stress ≈ -1583MPa (compressive)

==Ta{{sub|2}}O{{sub|5}} deposition (IBD)==
*[[media:IBD Ta2O5 deposition details.pdf|Ta{{sub|2}}O{{sub|5}} Standard Recipe]]
*[[media:IBD Ta2O5 Data April 2014.pdf|Ta{{sub|2}}O{{sub|5}} Data 2014 (Deposition Rate, Refractive Index, Stress, HF etch rate )]]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data March 2014]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014]
* Deposition Rate ≈ 8.52nm/min (users must calibrate this prior to critical deps)
* Refractive Index ≈ 2.174
* Stress ≈ -228MPa (compressive)

==TiO{{sub|2}} deposition (IBD)==
*[[media:New IBD TiO2 deposition.pdf|TiO2 Standard Recipe]]
*[[media:New IBD TiO2 Data April 2014.pdf|TiO2 Data 2014 (Deposition Rate, Refractive Index, Stress, HF etch rate )]]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO2 Data April 2014]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO2 Thickness uniformity 2014]
* Deposition Rate ≈ 1.37nm/min (users must calibrate this prior to critical deps)
* Refractive Index ≈ 2.349
* Stress ≈ -433MPa (compressive)

Stepper Recipes

2014-04-25T16:26:27Z

Abrahamsen:

{{recipes|Lithography}}

Below is a listing of stepper lithography recipes. Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities.  Stepper 3 is a DUV (248nm) system.  DUV resists do not work for i-line and i-line resists do not work for DUV.  Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems.  See the underlayer datasheets for details.   Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.

Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do a focus and/or exposure array to get optimal process parameters. 

= [[Stepper 1 (GCA 6300)]] =

==Positive Resist (GCA 6300)== 

Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="75" | Bake
! width="75" | Thickness
! width="125" | Exposure Time
! width="100" | Focus Offset
! width="75" | PEB
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| SPR955CM0.9
| 3 krpm/30”
| 95°C/60”
| ~ 0.9 um
| 1.2”
| 0
| 110°C/60”
| AZ300MIF
| 60"
| align="left" |
*0.5 um isolated lines
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}

|-
| SPR955CM0.9
| 3 krpm/30”
| 95°C/60”
| ~ 0.9 um
| 3.0”
| 4
| 110°C/60”
| AZ300MIF
| 60"
| align="left" |
*0.5 um holes
*Much longer exposure time for dense isolated holes
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}

|-
| SPR955CM0.9 
CEM365iS
| 3 krpm/30” 
5 krpm/30”
| 95°C/90”
| ~ 0.9 um
| 2.2”
| -10
| 110°C/60”
| AZ300MIF
| 60"
| align="left" |
*0.35um isolated spaces by SEM measurement.
*Higher exposure time due to CEM
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}

|-
| SPR950-0.8
| 4 krpm/30”
| 95°C/60”
| ~ 0.8 um
| 1.0”
| 0
| 105°C/60”
| AZ300MIF
| 60"
| align="left" |

|-
| SPR955CM-1.8
| 4 krpm/30”
| 90°C/90”
| ~ 1.8 um
| 2.3”
| 0
| 110°C/90”
| AZ300MIF
| 60"
| align="left" |
*0.5 um isolated lines
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}

|-
| SPR955CM-1.8
| 4 krpm/30”
| 90°C/90”
| ~ 1.8 um
| 1.7”
| -5
| 110°C/90”
| AZ300MIF
| 60"
| align="left" |
*1 um isolated posts
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}

|-
| SPR220-3.0
| 2.5 krpm/30”
| 115°C/90”
| ~ 2.7 um
| 2.4”
| 10
| 115°C/90”
| AZ300MIF
| 60"
| align="left" |
*0.5 um isolated lines
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}

|-
| SPR220-7.0
| 3.5 krpm/45”
| 115°C/120”
| ~ 7.0 um
| 4.5”
| 0
| *50°C/60” 
115°C/90”

| AZ300MIF
| 120"
| align="left" |
*1.0 um isolated lines; 1.25 um isolated spaces
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}

|}

==Negative Resist (GCA 6300)== 

Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="75" | Bake
! width="75" | Thickness
! width="125" | Exposure Time
! width="100" | Focus Offset
! width="75" | PEB
! width="75" | Flood
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| AZ5214
| 6 krpm/30”
| 95°C/60”
| ~ 1.0 um
| 0.2”
| 0
| 110°C/60”
| 60"
| AZ300MIF
| 60"
| align="left" |
*0.7 um res. possible 

|-
| nLOF5510
| 3 krpm/30”
| 90°C/60”
| ~ 0.93 um
| 0.74”
| -6
| 110°C/60”
| 0
| AZ300MIF
| 60"
| align="left" |
*0.5 um line openings good dense or isolated
*Use heated 1165 stripper for removal or lift-off
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}

|-
| nLOF2020
| 4 krpm/30”
| 110°C/60”
| ~ 2 um
| 0.55”
| -6
| 110°C/60”
| 0
| AZ300MIF
| 90"
| align="left" |
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}

|}

= [[Stepper 2 (AutoStep 200)]] =

==Positive Resist (AutoStep 200)== 
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.

'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="75" | Bake
! width="75" | Thickness
! width="125" | Exposure Time
! width="100" | Focus Offset
! width="75" | PEB
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| SPR955CM-0.9
| 3 krpm/30”
| 95°C/90”
| ~ 0.9 um
| 0.35”
| 0
| 110°C/90”
| AZ300MIF
| 60”
| align="left" |
*0.5um dense lines
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}

|-
| SPR955CM-0.9
| 3 krpm/30”
| 95°C/90”
| ~ 0.9 um
| 0.8”
| 0
| 110°C/90”
| AZ300MIF
| 60”
| align="left" |
*0.5um holes

|-
| SPR955CM-1.8
| 4 krpm/30”
| 95°C/90”
| ~ 1.8 um
| 0.4”
| -1
| 110°C/90”
| AZ300MIF
| 60”
| align="left" |
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}

|-
| SPR950-0.8
| 4 krpm/30”
| 95°C/60”
| ~ 0.8 um
| '''0.30”'''
| 0
| 105°C/60”
| AZ300MIF
| 60"
| align="left" |
|-
| SPR220-3.0
| 2.5 krpm/30”
| 115°C/90”
| ~ 2.7 um
| '''0.72”'''
| 10
| 115°C/90”
| AZ300MIF
| 60"
| align="left" |
*0.5 um isolated lines

|-
| SPR220-7.0
| 3.5 krpm/45”
| 115°C/120”
| ~ 7.0 um
| '''1.35"'''
| 0
| *50°C/60” 
115°C/90”

| AZ300MIF
| 120"
| align="left" |
*1.0 um isolated lines; 1.25 um isolated spaces
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C

|}

==Negative Resist (AutoStep 200)== 
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="75" | Bake
! width="75" | Thickness
! width="125" | Exposure Time
! width="100" | Focus Offset
! width="75" | PEB
! width="75" | Flood
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| nLOF5510
| 3 krpm/30”
| 90°C/60”
| ~ 0.93 um
| .25”
| -1
| 110°C/60”
| 0
| AZ300MIF
| 60”
| align="left" |
*0.4 um lines dense good
*Use heated 1165 stripper for removal or lift-off
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}

|-
| AZ5214
| 6 krpm/30”
| 95°C/60”
| ~ 1.0 um
| '''0.06”'''
| 0
| 110°C/60”
| 60"
| AZ300MIF
| 60"
| align="left" |
*0.7 um res. possible

|-
| nLOF2020
| 4 krpm/30”
| 110°C/60”
| ~ 2 um
| '''0.17”'''
| -6
| 110°C/60”
| 0
| AZ300MIF
| 90"
| align="left" |
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.

|}

= [[Stepper 3 (ASML DUV)]] =

==Positive Resist (ASML DUV)==
Anti-reflective coatings are, in general, used for the ASML stepper. LOL2000 and PMGI can also be used.  For AR2 coatings, spin coat at 3500rpm for a 670A thick coating.  Bake at 220C for 60s on a hotplate.  This AR coating is removed via oxygen plasma.  RIE 5 parameters are 20sccm, 10mT, 100W for 40s.  For DS-K101, spin at 5000rpm and bake at 185C for 60s.  This AR coating develops away and undercuts in AZ300MIF.  For isolated lines, this can cause them to lift-off.  If undercut rate is too high, increase bake temperature.  

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="75" | Bake
! width="75" | Thickness
! width="125" | Exposure Dose(mj)
! width="100" | Focus Offset
! width="75" | PEB
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| UV6-0.7
| 3.5 krpm/30”
| 135°C/60”
| 630nm
| 17
| -0.2
| 135°C/90”
| AZ300MIF
| 45”
| align="left" |
*200nm dense line/space
*NA 0.57, Sigma 0.75
*Eo ~ 5.5mj

|-
| UV210-0.3
| 5.0 krpm/30”
| 135°C/60”
| 230nm
| 20
| -0.1
| 135°C/90”
| AZ300MIF
| 45"
| align="left" |
*150nm dense line/space 
*NA 0.63, Sigma_o 0.8, Sigma_i 0.5

|-
| UV210-0.3
| 3.0 krpm/30”
| 135°C/90”
| 260nm
| 85
| -0.2
| 135°C/90”
| AZ300MIF
| 80”
| align="left" |
*170nm isolated holes
*NA 0.63, Sigma_o 0.8, Sigma_i 0.5

|}

==Negative Resist (ASML DUV)==
Anti-reflective coatings are, in general, used for the ASML stepper. LOL2000 and PMGI can also be used. For AR2 coatings, spin coat at 3500rpm for a 670A thick coating. Bake at 220C for 60s on a hotplate. This AR coating is removed via oxygen plasma. RIE 5 parameters are 20sccm, 10mT, 100W for 40s. For DS-K101, spin at 5000rpm and bake at 185C for 60s. This AR coating develops away and undercuts in AZ300MIF. For isolated lines, this can cause them to lift-off. If undercut rate is too high, increase bake temperature.

 

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="75" | Bake
! width="75" | Thickness
! width="125" | Exposure Dose (mj)
! width="100" | Focus Offset
! width="75" | PEB
! width="75" | Flood
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| UVN2300-0.5
| 2.5 krpm/30”
| 110°C/60”
| 550nm
| 23
| +0.2
| 105°C/60”
| Not Used
| AZ300MIF
| 40”
| align="left" |
*200nm isolated line
*NA 0.57, Sigma 0.5

|}

File:ASML Job Set-Up Guide.pdf

2014-04-01T18:26:24Z

Abrahamsen:

Stepper 3 (ASML DUV)

2014-04-01T17:56:45Z

Abrahamsen: /* Operating Procedures */

{{tool|{{PAGENAME}}
|picture=ASML.jpg
|type = Lithography
|super= Adam Abrahamsen
|phone=(805)839-3918x213
|location=Bay 3
|email=abrahamsen@ece.ucsb.edu
|description = ASML PAS 5500/300 DUV Stepper
|manufacturer = ASML
|materials =
|toolid=51
}}

= About =

The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. The system has a variable NA system and has a field image size of 21 x 21mm for 0.63 NA and a field size of 22mm x 27mm for 0.4 to 0.57 NA. Overlay accuracy is better than 30nm. The system is configured for 4” wafers and pieces down to 14mm in size can be exposed using a 4” wafer as a carrier.

= Process Information =

*[http://signupmonkey.ece.ucsb.edu/wiki/index.php/Lithography_Recipes Process Page]

=Service Provider=
* [http://www.asml.com ASML]

=Operating Procedures=
* [[media:ASML_Job_Set-Up_Guide.pdf|Training Manual]]

2014-03-14T18:34:05Z

Abrahamsen:

{{!}}-
!width=150{{!}}Supervisor
!width=200{{!}}[[{{{1}}}]]
{{!}}-valign="top"
!width=150{{!}}Supervisor Phone
!width=200{{!}}{{{2}}}
{{!}}-valign="top"

!width=150{{!}}Supervisor E-Mail
!width=200{{!}}[mailto:{{{4}}} {{{4}}}]<noinclude>[[category:Templates]]

Template:Staff

2014-03-14T18:31:54Z

Abrahamsen:

{| border="0" cellpadding="20" style="float: right;"
|-
|
{| border="0" cellpadding="2" cellspacing="0" style="background: whitesmoke; border: 1px solid #aaaaaa" align="center"
|-
! style="background:skyblue;" |{{{name|<includeonly>{{PAGENAME}}</includeonly>}}}
|-
|
{| border="0" cellpadding="2" cellspacing="1" style="background: none; border-top:1px solid #aaaaaa"
|-
!width=100|Position
!width=200|{{{position|NONE}}}
|-
!width=150|Room Number
!width=150|{{{room|NONE}}}
|-
!width=150|Phone
!width=150|{{{phone|NONE}}}
|-
{{#if:{{{cell|}}} |
!width=150{{!}}Cell
!width=150{{!}}{{{cell|}}}
}}
|-
!width=150|E-Mail
!width=150|[mailto:{{{email|NONE}}} {{{email|NONE}}}]
|-
|}
|}
|}
<includeonly>[[category:Staff]]</includeonly>
<noinclude>
[[category:Templates]]

<div style="width: 30%;"><pre>
{{staff|{{PAGENAME}}
|position =
|room =
|phone = (805)839-3918x###
|cell = .....
|email = NAME@ece.ucsb.edu
}}
</pre></div>

2014-03-13T22:19:18Z

Abrahamsen: /* Current Work */

{{staff|{{PAGENAME}}
|position = Assistant Development Engineer
|room = 1109A
|phone = (805) 839-3918x208
|cell =
|email = hopkins@ece.ucsb.edu
}}

=About=
Lorem ipsum dolor sit amet, consectetur adipiscing elit. Aenean aliquam sapien mattis urna tempus eu malesuada neque consectetur. Nulla molestie turpis eget felis interdum nec ullamcorper elit gravida. Donec tincidunt odio et neque feugiat et imperdiet neque congue. Suspendisse pretium pulvinar mi, a tincidunt lorem suscipit nec. Vivamus condimentum massa ac enim lobortis dignissim pellentesque turpis fermentum. Fusce ac neque ultricies nisi placerat adipiscing. Duis tristique feugiat feugiat. Quisque nec facilisis nisl.

=Current Work=

Master Bug Chaser! Expert of nothing! Man of many!

Nullam auctor ligula vel tortor luctus porttitor quis vitae arcu. Mauris venenatis tincidunt leo, vel vehicula lacus ornare in. Suspendisse blandit egestas lectus, sed hendrerit metus condimentum sed. Etiam adipiscing sagittis mattis. Class aptent taciti sociosqu ad litora torquent per conubia nostra, per inceptos himenaeos. Phasellus eu velit justo, nec semper lacus. Sed a quam orci. Maecenas in semper tortor. Etiam ac nunc dui, in laoreet est. Fusce erat nisl, pellentesque iaculis cursus et, sollicitudin a quam. Mauris quis ligula vel enim viverra eleifend. Sed cursus commodo sodales. Nullam dictum odio in augue pharetra placerat. Sed ligula quam, laoreet id sodales at, lacinia a ligula.

=Tools=
{{PAGENAME}} is in charge of the following tools:
{|
|-valign="top"
|width="300"|
*[[Vacuum Sealer]]
*[[Dicing Saw (ADT)]]
*[[Wire Saw (Takatori)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Molecular Vapor Deposition]]
*[[Plasma Activation (EVG 810)]]
||
* Wet Benches
**[[Acid Benches]]
**[[Solvent Benches]]
**[[Photoresist Spin Coat Benches]]
**[[Develop Wet Benches]]
|}

E-Beam 4 (CHA)

2012-08-24T16:16:26Z

Abrahamsen:

{{tool|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Tony Bosch
|phone=(805)839-3918x217
|location=Bay 3
|email=bosch@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
= About =
This electron-beam evaporation system is the newest of the lab for metal deposition. This system is a bell-jar type system and has the capability to do up to 10-4” wafers in a lift-off configuration and up to 24-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

= Detailed Specifications =
*Temescal 10kV power supply
*1-Temescal 8-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 1e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size: Pieces or up to 10-4” wafers for lift-off and 24-4” wafers for sidewall coverage
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr

=Documentation=
*[[media:E-Beam-4-Operating-Procedures.pdf|Operating Procedures]]

User talk:Abrahamsen

2012-07-13T15:08:48Z

Abrahamsen: Created page with "blank"

blank