UCSB Nanofab Wiki - User contributions [en]

E-Beam 4 (CHA)

2026-04-14T17:18:07Z

Barreraz:

{{tool2|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
[[File:EBeam4 Controls.jpeg|thumb|EBeam4's controls]]

== About ==
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

== Detailed Specifications ==
*Temescal 10kV power supply
*1-Temescal 8-pocket series, 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size:
**Pieces or
**9x 4” wafers for lift-off (normal incidence)
**24x 4” wafers for sidewall coverage (planetary)
**4x 6-inch wafers for normal incidence
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

== Documentation ==
*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]
*[https://wiki.nanofab.ucsb.edu/w/images/9/9b/EBeam4_Planetary_Fixture_SOP_12-11-25.pdf Planetary Fixture SOP] (Requires SUM Reservation)

== Recipes ==

=== Materials Table ===
For tables listing all available materials and deposition parameters, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|'''E-Beam Recipe Page''']].

=== Process Control Data ===
*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots]
*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots]
*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots]
*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots]

E-Beam 4 (CHA)

2026-04-14T17:17:43Z

Barreraz:

{{tool2|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
[[File:EBeam4 Controls.jpeg|thumb|EBeam4's controls]]

== About ==
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

== Detailed Specifications ==
*Temescal 10kV power supply
*1-Temescal 8-pocket series, 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size:
**Pieces or
**9x 4” wafers for lift-off (normal incidence)
**24x 4” wafers for sidewall coverage (planetary)
**4x 6-inch wafers for normal incidence
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

== Documentation ==
*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]
*[https://wiki.nanofab.ucsb.edu/w/images/9/9b/EBeam4_Planetary_Fixture_SOP_12-11-25.pdf Planetary Fixture SOP] (Requires SUM Reservation)

== Recipes ==

=== Materials Table ===
For tables listing all available materials and deposition parameters, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|'''E-Beam Recipe Page''']].

=== Process Control Data ===
*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots]
*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots]
*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots]
*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots]

PECVD 2 (Advanced Vacuum)

2026-03-06T18:55:16Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=PECVD2.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|phone=(805)839-7975
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = Vision 310 Advanced Vacuum PECVD
|manufacturer = Plasma-Therm
|materials =
|toolid=15
}}
==About==

*'''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO2, SiNx, SiOxNy, and a-Si''' using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases.
*'''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
*'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
*'''Low-Stress Si3N4''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
**These films alternate between thin (<10nm) compressive and tensile layers.
**The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]].

==See Also==

*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]

==Documentation==

*
*
*
*
*
*
*
*
*
*
*[https://wiki.nanofab.ucsb.edu/w/images/9/9a/PECVD2_SOP_Final_V45.47_3-6-26-compressed.pdf Operating Instructions]
*[https://wiki.nanofab.ucsb.edu/w/images/6/68/PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf Modifying Deposition Time in "STD LS-Si3N4v4" Recipe]
*[https://wiki.nanofab.ucsb.edu/w/images/1/1b/PECVD2_Recipe_Temperature_Change.pdf Modifying Deposition Temperature]

*[[Wafer Coating Process Traveler]]
*For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]

==Recipes & Data==
[[File:PECVD_SPC_Chart_Example.png|alt=SPC chart example|thumb|228x228px|Example Process Control Charts (SPC) for thin-film DepCals.]]
[[File:Surfscan_230113A7G2_after_low_particles.jpg|alt=screenshot of surfscan particle count|thumb|205x205px|Example particle counts taken on each film.]]
[[File:PECVD1_SiO2_F50_WaferMap_example.jpg|alt=Screenshot of Filmetrics F50 wafermap of typical DepCals film|thumb|215x215px|Example of DepCals Thickness/Refractive Index uniformity measurement (4% shown here).]]
*Standard Recipes: [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|'''Recipes > Deposition > PECVD #2''']]

*A list of ''all available'' deposited films can be found here: [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]

===Process Control Data===

*Process Control Charts: '''[[Process Group - Process Control Data#PECVD #1 (PlasmaTherm 790) - Process Control|Process Control > PECVD#1]]'''
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 Plots of all data]
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2 Data]
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4 Data]
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low-Stress Si3N4 Data]
***[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Data]

File:PECVD2 SOP Final V45.47 3-6-26-compressed.pdf

2026-03-06T18:55:01Z

Barreraz:

E-Beam Evaporation Recipes

2026-01-21T15:02:56Z

Barreraz: /* Materials Table (E-Beam #1) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|-
|Zr
|(6, 7, 8)
|C
|6.49
|0.600
|150
|
|-
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

E-Beam Evaporation Recipes

2026-01-21T15:02:04Z

Barreraz: /* Materials Table (E-Beam #1) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|-
|Zr
|(6, 7, 8)
|C
|6.49
|0.600
|
|
|-
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

E-Beam Evaporation Recipes

2026-01-21T14:57:10Z

Barreraz: /* Materials Table (E-Beam #4) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

E-Beam 4 (CHA)

2025-12-15T13:32:39Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
[[File:EBeam4 Controls.jpeg|thumb|EBeam4's controls]]

== About ==
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

== Detailed Specifications ==
*Temescal 10kV power supply
*1-Temescal 8-pocket series, 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size:
**Pieces or
**9x 4” wafers for lift-off (normal incidence)
**24x 4” wafers for sidewall coverage (planetary)
**4x 6-inch wafers for normal incidence
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

== Documentation ==
*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]
*[https://wiki.nanofab.ucsb.edu/w/images/9/9b/EBeam4_Planetary_Fixture_SOP_12-11-25.pdf Planetary Fixture SOP] (Requires SUM Reservation)

== Recipes ==

=== Materials Table ===
For tables listing all available materials and deposition parameters, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|'''E-Beam Recipe Page''']].

=== Process Control Data ===
*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots]
*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots]
*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots]
*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots]

File:EBeam4 Planetary Fixture SOP 12-11-25.pdf

2025-12-15T13:30:40Z

Barreraz:

Thermal Evap 2 (Solder)

2025-05-29T16:29:04Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=Thermal2.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|location=Bay 3
|description = ?
|manufacturer = Custom
|materials =
|toolid=12
}}

== About ==

Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used.

Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.

== Detailed Specifications ==
Wafers up to 12" can be mounted.

==Documentation==
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]
*[https://wiki.nanofab.ucsb.edu/w/images/7/74/Thermal_Evap_2_pump_down_procedure-New-_5-29-25.pdf Temp Pump Down SOP as of 5-29-25]

== Recipes ==
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]]
** ''Visit this page for the materials table and evaporation parameters for all materials available.''
== Plot ==
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png Plot for Indium Deposition]

File:Thermal Evap 2 pump down procedure-New- 5-29-25.pdf

2025-05-29T16:27:47Z

Barreraz:

E-Beam 1 (Sharon)

2025-05-16T18:18:36Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1 Deposition + Beam Controllers]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/a/a1/EB1_Rotation_Fixture_SOP_5-16-25.pdf Rotation Fixture SOP]
**[[E-Beam 1 - 4-inch, 4-wafer Fixture SOP|4-inch, 4-wafer Fixture SOP]]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB1 Rotation Fixture SOP 5-16-25.pdf

2025-05-16T18:18:00Z

Barreraz:

PECVD 1 (PlasmaTherm 790)

2025-03-14T14:56:34Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=PECVD1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=16
}}

__TOC__
== About ==

This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition. CF4/O2 plasmas are used to clean the chamber between depositions.

These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.

== Detailed Specifications ==

*Gases used: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
*~ 10mT ultimate chamber pressure
*13.56 Mhz excitation freq.
*Sample size: pieces to 6” wafers
*Automatic tuning network
*RF Power control
*Full computer operation
*Standard recipes for a variety of film thicknesses

==Documentation==
*[https://wiki.nanofab.ucsb.edu/w/images/6/64/IMG_7361.jpg Operating Instructions]
*[[PECVD1 Wafer Coating Process|Wafer Coating Process Traveler]]
*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]

== Recipes & Historical Data ==
* Standard Recipes & Historical (Process Control) Data can be found at:
** [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|'''Recipes > Deposition > PECVD1''']]

File:IMG 7361.jpg

2025-03-14T14:55:56Z

Barreraz:

E-Beam 3 (Temescal)

2024-09-12T22:19:33Z

Barreraz:

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Aidan Hopkins
|super2= Mike Barreraz
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{Blank}}

[https://wiki.nanofab.ucsb.edu/w/images/b/b6/EB-3_operation_instructions_7-8-24.pdf EB-3_operation_instructions_5-22-24.pdf]

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

E-Beam 3 (Temescal)

2024-07-08T18:56:12Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{Blank}}

[https://wiki.nanofab.ucsb.edu/w/images/b/b6/EB-3_operation_instructions_7-8-24.pdf EB-3_operation_instructions_5-22-24.pdf]

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

File:EB-3 operation instructions 7-8-24.pdf

2024-07-08T18:55:45Z

Barreraz:

E-Beam 4 (CHA)

2024-06-06T22:20:08Z

Barreraz: /* Documentation */

File:EB4 Operating Instructions 6-6-24.pdf

2024-06-06T22:19:50Z

Barreraz:

E-Beam 1 (Sharon)

2024-06-06T22:08:12Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/e/e3/EB1_Rotation_Fixture_SOP_6-4-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-1 operation instructions 6-6-24.pdf

2024-06-06T22:07:51Z

Barreraz:

E-Beam 1 (Sharon)

2024-06-04T19:32:10Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/5/58/EB-1_operation_instructions_6-3-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/e/e3/EB1_Rotation_Fixture_SOP_6-4-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB1 Rotation Fixture SOP 6-4-24.pdf

2024-06-04T19:31:44Z

Barreraz:

File:E-beam1.jpg

2024-06-04T17:26:55Z

Barreraz: Barreraz uploaded a new version of File:E-beam1.jpg

File:IMG 5450.jpg

2024-06-04T17:26:06Z

Barreraz:

eb1

File:IMG 5450.jpg

2024-06-04T17:22:28Z

Barreraz:

E-Beam 1 (Sharon)

2024-06-04T17:19:02Z

Barreraz: /* About */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/5/58/EB-1_operation_instructions_6-3-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/f/fd/Rotation_Fixture_SOP_5-7-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-3 operation instructions 5-22-24 V45.47.pdf

2024-06-03T21:44:47Z

Barreraz: Barreraz uploaded a new version of File:EB-3 operation instructions 5-22-24 V45.47.pdf

E-Beam 1 (Sharon)

2024-06-03T21:44:23Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/5/58/EB-1_operation_instructions_6-3-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/f/fd/Rotation_Fixture_SOP_5-7-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-1 operation instructions 6-3-24.pdf

2024-06-03T21:43:45Z

Barreraz:

E-Beam 3 (Temescal)

2024-05-22T23:30:33Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{Blank}}

[https://wiki.nanofab.ucsb.edu/w/images/7/7c/EB-3_operation_instructions_5-22-24_V45.47.pdf EB-3_operation_instructions_5-22-24.pdf]

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

File:EB-3 operation instructions 5-22-24 V45.47.pdf

2024-05-22T23:30:22Z

Barreraz:

File:EB-3 operation instructions 5-22-24.pdf

2024-05-22T23:28:28Z

Barreraz: Barreraz uploaded a new version of File:EB-3 operation instructions 5-22-24.pdf

File:EB-3 operation instructions 5-22-24.pdf

2024-05-22T23:26:34Z

Barreraz: Barreraz uploaded a new version of File:EB-3 operation instructions 5-22-24.pdf

E-Beam 1 (Sharon)

2024-05-22T23:25:43Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/0/0d/EB-1_operation_instructions_2-13-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/f/fd/Rotation_Fixture_SOP_5-7-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-1 operation instructions 2-13-24.pdf

2024-05-22T23:25:28Z

Barreraz:

E-Beam 3 (Temescal)

2024-05-22T21:41:36Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{Blank}}

[https://wiki.nanofab.ucsb.edu/w/images/4/40/EB-3_operation_instructions_5-22-24.pdf EB-3_operation_instructions_5-22-24.pdf]

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

E-Beam 3 (Temescal)

2024-05-22T21:40:22Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{Blank}}

https://wiki.nanofab.ucsb.edu/w/images/4/40/EB-3_operation_instructions_5-22-24.pdf

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

E-Beam 3 (Temescal)

2024-05-22T21:07:06Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{EB-3 operation instructions 5-22-24.pdf}}
https://wiki.nanofab.ucsb.edu/w/images/4/40/EB-3_operation_instructions_5-22-24.pdf

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

E-Beam 3 (Temescal)

2024-05-22T21:05:46Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{EB-3 operation instructions 5-22-24.pdf}}

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

File:EB-3 operation instructions 5-22-24.pdf

2024-05-22T21:03:50Z

Barreraz:

E-Beam 1 (Sharon)

2024-05-07T23:03:09Z

Barreraz:

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/2/2d/EB-1_operation_instructions_2_13_24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/f/fd/Rotation_Fixture_SOP_5-7-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

E-Beam 1 (Sharon)

2024-05-07T23:02:09Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/2/2d/EB-1_operation_instructions_2_13_24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[./Https://wiki.nanofab.ucsb.edu/w/images/f/fd/Rotation%20Fixture%20SOP%205-7-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:Rotation Fixture SOP 5-7-24.pdf

2024-05-07T23:00:36Z

Barreraz: Barreraz uploaded a new version of File:Rotation Fixture SOP 5-7-24.pdf

E-Beam 1 (Sharon)

2024-05-07T22:27:43Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/2/2d/EB-1_operation_instructions_2_13_24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/f/fd/Rotation_Fixture_SOP_5-7-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

E-Beam 1 (Sharon)

2024-05-07T22:26:41Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/2/2d/EB-1_operation_instructions_2_13_24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**Rotation Fixture SOP

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:Rotation Fixture SOP 5-7-24.pdf

2024-05-07T22:25:00Z

Barreraz:

E-Beam 1 (Sharon)

2024-02-13T19:44:12Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/2/2d/EB-1_operation_instructions_2_13_24.pdf EBeam 1 Operating Procedure]
**Operating Instructions

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-1 operation instructions 2 13 24.pdf

2024-02-13T19:43:50Z

Barreraz: