UCSB Nanofab Wiki - User contributions [en]

E-Beam 4 (CHA)

2026-09-30T13:13:45Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
[[File:EBeam4 Controls.jpeg|thumb|EBeam4's controls]]

== About ==
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations.

== Detailed Specifications ==
*Temescal 10kV power supply
*1-Temescal 8-pocket series, 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size:
**Pieces or
**9x 4” wafers for lift-off (normal incidence)
**24x 4” wafers for sidewall coverage (planetary)
**4x 6-inch wafers for normal incidence
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.
*Maximum deposition thickness during a run is limited to 1.0 microns.

== Documentation ==
*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]
*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/EBeam4_Planetary_Fixture_SOP_1-29-26V45.47_Final.pdf Planetary Fixture SOP] (Requires SUM Reservation)

== Recipes ==

=== Materials Table ===
For tables listing all available materials and deposition parameters, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|'''E-Beam Recipe Page''']].

=== Process Control Data ===
*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots]
*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots]
*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots]
*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots]

File:EBeam4 Planetary Fixture SOP 1-29-26V45.47 Final.pdf

2026-09-30T13:13:25Z

Barreraz:

IR Thermal Microscope (QFI) - Standard Operating Procedure (HotSpot/ThermalEmission)

2026-09-15T17:55:09Z

Barreraz: QFI upgraded, new SOP

Operating Procedure for Hotspot and Thermal Emission modes. Thermal Emission mode measures an actual temeperature, whereas HotSpot just shows the pixels with heat, without temperature calculation, and is simpler to run.
'''Danger''': DO NOT damage the probe needles nor microscope objectives. If you are not careful, you can easily crash the microscope objective into the probe needles!
The microscope objectives may be impossible to replace, and the probe needles are setup for ''Very'' low spacing between the microscope objectives, needles and sample stage.

It is better if you can practice how to use a [[Probe Station & Curve Tracer|Probe Station]] in your own lab, or in the NanoFab before using this system.
If you think the needles got bumped or damaged, please notify staff ASAP so we can take a look and replace them.

# '''Contact staff for filling the Liquid Nitrogen ("LN2") dewar the day before your planned usage.'''
# Use the small ~2 Liter container to fill LN2 for the MWIR microscope
## You can tell when it's full when LN2 droplets spill out from the sides of the funnel's foam insert.
# Turn on the Temperature Controller power and the System Controller (turning the key to 1 and press the red Power button)
# Turn on the computer by clicking on the rocker switch once, behind the right-side panel. Ensure computer monitor is on. Motion Control will open automatically. Note the Z (focus) setting at Maximum speed 100%! Reduce to 25-50%.
# Open the Software: '''Hotspot''' for standard imaging, '''ThermalMap''' for more complex temperature measurements.
# Set up the electrical connection for the probes through the BNC cables according to your device, and turn on the Keithley power supply/SMU.
# Move the stage all the way forward with the front-most knob, put the sample on the stage, then move the stage back under the backmost microscope. ENSURE no probe needles are down, nor collide during this process! Do not touch the probe needles with your sample or tweezers.
# Move the probe manipulators to the right position to contact the device. CAREFUL - the magnetic bases can be hard to move, ensure nothing collides when making large movements. '''In the Software:'''
# Follow the [Https://wiki.nanofab.ucsb.edu/w/images/e/ef/WFI -HS 102 Quick Start Guide - Standard Hot Spot.pdf QFI Hot Spot S.O.P.] or [https://wiki.nanofab.ucsb.edu/w/images/8/81/TM101_Standard_Temperature_Mapping_%281-Temp_Emissivity_Method%29.pdf QFI Temperature Mapping S.O.P.]
# For saving data: To save your image, right click on the image and save as.
# Save the file in your Nanofiles folder.

==== Ending your Session ====

# Unload the sample:
## lift the probes.
## Move the stage '''all the way forward''', after passing the probes.
# Turn off the Lamp inside the dark box.
# Please keep supplies and tweezers inside the dark box.
# Software: Go to file and quit.
# Sync the data with the "'''''Nanofiles Sync'''''" program on the desktop.
## Optionally check that the data is available on your laptop.
# Turn off the chuck heater.
# Close the dark box.

Author: [[Demis D. John]], 2025. Thanks to Tongxin Han for assistance.

File:TM101 Standard Temperature Mapping (1-Temp Emissivity Method).pdf

2026-09-15T17:53:07Z

Barreraz:

File:WFI -HS 102 Quick Start Guide - Standard Hot Spot.pdf

2026-09-15T17:42:02Z

Barreraz:

PECVD 1 (PlasmaTherm 790)

2026-09-01T17:33:10Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=PECVD1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=16
}}

__TOC__
== About ==

'''Films:''' This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films.

'''Hardware:''' The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250°C.

'''Gases:'''

SiH4 (Silane) is the Silicon precursor gas. It is diluted with He down to 2% Silane for safety.

N2O is the Oxygen precursor gas, for producing SiO2.

NH4 is the Nitrogen precursor gas, for producing Si3N4.

CF4 & O2 are used for plasma-cleaning the chamber, by etching off deposited SiO2/Si3N4 films from the chamber walls (in addition to wet-cleaning the chamber walls).

N2 is available as a purging gas or carrier gas. A very low percentage of N2 is expected to "crack" at the low RF powers used on this system.

'''Film Properties:'''

SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 Å/min at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min.

Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition.

'''Applications:''' These films are typically used for reactive ion etching masks, electrical insulators, chemical passivation layers, optical anti-reflective coatings and capacitor dielectrics. The system is fully programmable with windows-based software.

'''Usage:''' Users type in a deposition time for each recipe, using the published (or user-measured) deposition rates. Current dep rates for standard films can be found on [[Process Group - Process Control Data#PECVD #1 (PlasmaTherm 790) - Process Control|the PECVD#1 process control data charts]].

Custom programs for dielectric stacks or different process parameters or SiOxNy films can be written and saved.

== Detailed Specifications ==

*Gases available: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
*~10mT base chamber pressure
*13.56 MHz excitation freq.
**Automatic tuning network
**RF Power control
*Sample size: pieces to 6” wafers
*Full computer operation
*Standard recipes with deposition variable time

==Documentation==
*[https://wiki.nanofab.ucsb.edu/w/images/e/e0/PECVD1_SOP_8-26-26.pdf Operating Instructions]
*
*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]

== Recipes & Data ==
* Standard Recipes: [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|'''Recipes > Deposition > PECVD#1''']]
** A list of ''all available'' deposited films can be found here: [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]
* Process Control Charts: '''[[Process Group - Process Control Data#PECVD #1 (PlasmaTherm 790) - Process Control|Process Control > PECVD#1]]'''
[[File:PECVD SPC Chart Example.png|alt=SPC chart example|thumb|228x228px|Example Process Control Charts (SPC) for thin-film DepCals.|none]]
[[File:Surfscan 230113A7G2 after low particles.jpg|alt=screenshot of surfscan particle count|thumb|205x205px|Example particle counts taken on each film.|none]]
[[File:PECVD1 SiO2 F50 WaferMap example.jpg|alt=Screenshot of Filmetrics F50 wafermap of typical DepCals film|thumb|215x215px|Example of DepCals Thickness/Refractive Index uniformity measurement (4% shown here).|none]]

File:PECVD1 SOP 8-26-26.pdf

2026-09-01T17:32:08Z

Barreraz:

PECVD 1 (PlasmaTherm 790)

2026-08-27T19:22:15Z

Barreraz: /* About */

{{tool2|{{PAGENAME}}
|picture=PECVD1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=16
}}

__TOC__
== About ==

'''Films:''' This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films.

'''Hardware:''' The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250°C.

'''Gases:'''

SiH4 (Silane) is the Silicon precursor gas. It is diluted with He down to 2% Silane for safety.

N2O is the Oxygen precursor gas, for producing SiO2.

NH4 is the Nitrogen precursor gas, for producing Si3N4.

CF4 & O2 are used for plasma-cleaning the chamber, by etching off deposited SiO2/Si3N4 films from the chamber walls (in addition to wet-cleaning the chamber walls).

N2 is available as a purging gas or carrier gas. A very low percentage of N2 is expected to "crack" at the low RF powers used on this system.

'''Film Properties:'''

SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 Å/min at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min.

Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition.

'''Applications:''' These films are typically used for reactive ion etching masks, electrical insulators, chemical passivation layers, optical anti-reflective coatings and capacitor dielectrics. The system is fully programmable with windows-based software.

'''Usage:''' Users type in a deposition time for each recipe, using the published (or user-measured) deposition rates. Current dep rates for standard films can be found on [[Process Group - Process Control Data#PECVD #1 (PlasmaTherm 790) - Process Control|the PECVD#1 process control data charts]].

Custom programs for dielectric stacks or different process parameters or SiOxNy films can be written and saved.

== Detailed Specifications ==

*Gases available: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
*~10mT base chamber pressure
*13.56 MHz excitation freq.
**Automatic tuning network
**RF Power control
*Sample size: pieces to 6” wafers
*Full computer operation
*Standard recipes with deposition variable time

==Documentation==
*[https://wiki.nanofab.ucsb.edu/w/images/6/64/IMG_7361.jpg Operating Instructions]
*[[PECVD1 Wafer Coating Process|Wafer Coating Process Traveler]]
*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]

== Recipes & Data ==
* Standard Recipes: [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|'''Recipes > Deposition > PECVD#1''']]
** A list of ''all available'' deposited films can be found here: [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]
* Process Control Charts: '''[[Process Group - Process Control Data#PECVD #1 (PlasmaTherm 790) - Process Control|Process Control > PECVD#1]]'''
[[File:PECVD SPC Chart Example.png|alt=SPC chart example|thumb|228x228px|Example Process Control Charts (SPC) for thin-film DepCals.|none]]
[[File:Surfscan 230113A7G2 after low particles.jpg|alt=screenshot of surfscan particle count|thumb|205x205px|Example particle counts taken on each film.|none]]
[[File:PECVD1 SiO2 F50 WaferMap example.jpg|alt=Screenshot of Filmetrics F50 wafermap of typical DepCals film|thumb|215x215px|Example of DepCals Thickness/Refractive Index uniformity measurement (4% shown here).|none]]

E-Beam Evaporation Recipes

2026-07-23T19:40:35Z

Barreraz: /* Materials Table (E-Beam #1) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|'''Use only with permission'''
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|'''Use only with permission'''
Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #8 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|-
|Zr
|(6, 7, 8)
|C
|6.49
|0.600
|150
|
|-
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

E-Beam Evaporation Recipes

2026-06-16T16:46:54Z

Barreraz: /* Materials Table (E-Beam #1) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|'''Use only with permission'''
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|'''Use only with permission'''
Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|-
|Zr
|(6, 7, 8)
|C
|6.49
|0.600
|150
|
|-
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

E-Beam 1 (Sharon)

2026-06-15T16:41:08Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1 Deposition + Beam Controllers]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
*Maximum allowed film thickness: 1µm
**Please ask supervisor if you need to go thicker
**Please provide justification for your needs (eg. Not “2 µm is a nice round number”)

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**[https://wiki.nanofab.ucsb.edu/w/images/8/86/EB1_Rotation_Fixture_SOP_Final.pdf EBeam1 Rotation Fixture SOP]
**[[E-Beam 1 - 4-inch, 4-wafer Fixture SOP|4-inch, 4-wafer Fixture SOP]]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.
*[[Process Group - Process Control Data#E-Beam 1 (Sharon) - Process Control|'''Process Control Data''']] - Calibration data for the most utilized metals on this sytem.

E-Beam 1 (Sharon)

2026-06-15T16:36:30Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1 Deposition + Beam Controllers]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
*Maximum allowed film thickness: 1µm
**Please ask supervisor if you need to go thicker
**Please provide justification for your needs (eg. Not “2 µm is a nice round number”)

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[./Https://wiki.nanofab.ucsb.edu/w/images/8/86/EB1_Rotation_Fixture_SOP_Final.pdf EBeam1 Rotation Fixture SOP]
**[[E-Beam 1 - 4-inch, 4-wafer Fixture SOP|4-inch, 4-wafer Fixture SOP]]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.
*[[Process Group - Process Control Data#E-Beam 1 (Sharon) - Process Control|'''Process Control Data''']] - Calibration data for the most utilized metals on this sytem.

E-Beam 1 (Sharon)

2026-06-15T16:34:47Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1 Deposition + Beam Controllers]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
*Maximum allowed film thickness: 1µm
**Please ask supervisor if you need to go thicker
**Please provide justification for your needs (eg. Not “2 µm is a nice round number”)

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[./Https://wiki.nanofab.ucsb.edu/w/images/8/86/EB1_Rotation_Fixture_SOP_Final.pdf Rotation Fixture SOP]
**[[E-Beam 1 - 4-inch, 4-wafer Fixture SOP|4-inch, 4-wafer Fixture SOP]]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.
*[[Process Group - Process Control Data#E-Beam 1 (Sharon) - Process Control|'''Process Control Data''']] - Calibration data for the most utilized metals on this sytem.

E-Beam 1 (Sharon)

2026-06-15T16:33:57Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1 Deposition + Beam Controllers]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
*Maximum allowed film thickness: 1µm
**Please ask supervisor if you need to go thicker
**Please provide justification for your needs (eg. Not “2 µm is a nice round number”)

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/8/86/EB1_Rotation_Fixture_SOP_Final.pdf Rotation Fixture SOP]
**[[E-Beam 1 - 4-inch, 4-wafer Fixture SOP|4-inch, 4-wafer Fixture SOP]]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.
*[[Process Group - Process Control Data#E-Beam 1 (Sharon) - Process Control|'''Process Control Data''']] - Calibration data for the most utilized metals on this sytem.

File:EB1 Rotation Fixture SOP Final.pdf

2026-06-15T16:33:31Z

Barreraz:

E-Beam 1 (Sharon)

2026-06-12T14:47:12Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1 Deposition + Beam Controllers]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
*Maximum allowed film thickness: 1µm
**Please ask supervisor if you need to go thicker
**Please provide justification for your needs (eg. Not “2 µm is a nice round number”)

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/1/19/EB1_Rotation_Fixture_SOP_6-12-26_Rev45.47.pdf Rotation Fixture SOP]
**[[E-Beam 1 - 4-inch, 4-wafer Fixture SOP|4-inch, 4-wafer Fixture SOP]]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.
*[[Process Group - Process Control Data#E-Beam 1 (Sharon) - Process Control|'''Process Control Data''']] - Calibration data for the most utilized metals on this sytem.

File:EB1 Rotation Fixture SOP 6-12-26 Rev45.47.pdf

2026-06-12T14:45:52Z

Barreraz:

E-Beam 4 (CHA)

2026-04-14T17:18:07Z

Barreraz:

{{tool2|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
[[File:EBeam4 Controls.jpeg|thumb|EBeam4's controls]]

== About ==
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

== Detailed Specifications ==
*Temescal 10kV power supply
*1-Temescal 8-pocket series, 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size:
**Pieces or
**9x 4” wafers for lift-off (normal incidence)
**24x 4” wafers for sidewall coverage (planetary)
**4x 6-inch wafers for normal incidence
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

== Documentation ==
*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]
*[https://wiki.nanofab.ucsb.edu/w/images/9/9b/EBeam4_Planetary_Fixture_SOP_12-11-25.pdf Planetary Fixture SOP] (Requires SUM Reservation)

== Recipes ==

=== Materials Table ===
For tables listing all available materials and deposition parameters, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|'''E-Beam Recipe Page''']].

=== Process Control Data ===
*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots]
*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots]
*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots]
*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots]

E-Beam 4 (CHA)

2026-04-14T17:17:43Z

Barreraz:

{{tool2|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
[[File:EBeam4 Controls.jpeg|thumb|EBeam4's controls]]

== About ==
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

== Detailed Specifications ==
*Temescal 10kV power supply
*1-Temescal 8-pocket series, 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size:
**Pieces or
**9x 4” wafers for lift-off (normal incidence)
**24x 4” wafers for sidewall coverage (planetary)
**4x 6-inch wafers for normal incidence
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

== Documentation ==
*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]
*[https://wiki.nanofab.ucsb.edu/w/images/9/9b/EBeam4_Planetary_Fixture_SOP_12-11-25.pdf Planetary Fixture SOP] (Requires SUM Reservation)

== Recipes ==

=== Materials Table ===
For tables listing all available materials and deposition parameters, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|'''E-Beam Recipe Page''']].

=== Process Control Data ===
*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots]
*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots]
*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots]
*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots]

PECVD 2 (Advanced Vacuum)

2026-03-06T18:55:16Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=PECVD2.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|phone=(805)839-7975
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = Vision 310 Advanced Vacuum PECVD
|manufacturer = Plasma-Therm
|materials =
|toolid=15
}}
==About==

*'''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO2, SiNx, SiOxNy, and a-Si''' using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases.
*'''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
*'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
*'''Low-Stress Si3N4''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
**These films alternate between thin (<10nm) compressive and tensile layers.
**The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]].

==See Also==

*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]

==Documentation==

*
*
*
*
*
*
*
*
*
*
*[https://wiki.nanofab.ucsb.edu/w/images/9/9a/PECVD2_SOP_Final_V45.47_3-6-26-compressed.pdf Operating Instructions]
*[https://wiki.nanofab.ucsb.edu/w/images/6/68/PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf Modifying Deposition Time in "STD LS-Si3N4v4" Recipe]
*[https://wiki.nanofab.ucsb.edu/w/images/1/1b/PECVD2_Recipe_Temperature_Change.pdf Modifying Deposition Temperature]

*[[Wafer Coating Process Traveler]]
*For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]

==Recipes & Data==
[[File:PECVD_SPC_Chart_Example.png|alt=SPC chart example|thumb|228x228px|Example Process Control Charts (SPC) for thin-film DepCals.]]
[[File:Surfscan_230113A7G2_after_low_particles.jpg|alt=screenshot of surfscan particle count|thumb|205x205px|Example particle counts taken on each film.]]
[[File:PECVD1_SiO2_F50_WaferMap_example.jpg|alt=Screenshot of Filmetrics F50 wafermap of typical DepCals film|thumb|215x215px|Example of DepCals Thickness/Refractive Index uniformity measurement (4% shown here).]]
*Standard Recipes: [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|'''Recipes > Deposition > PECVD #2''']]

*A list of ''all available'' deposited films can be found here: [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]

===Process Control Data===

*Process Control Charts: '''[[Process Group - Process Control Data#PECVD #1 (PlasmaTherm 790) - Process Control|Process Control > PECVD#1]]'''
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 Plots of all data]
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2 Data]
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4 Data]
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low-Stress Si3N4 Data]
***[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Data]

File:PECVD2 SOP Final V45.47 3-6-26-compressed.pdf

2026-03-06T18:55:01Z

Barreraz:

E-Beam Evaporation Recipes

2026-01-21T15:02:56Z

Barreraz: /* Materials Table (E-Beam #1) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|-
|Zr
|(6, 7, 8)
|C
|6.49
|0.600
|150
|
|-
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

E-Beam Evaporation Recipes

2026-01-21T15:02:04Z

Barreraz: /* Materials Table (E-Beam #1) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|-
|Zr
|(6, 7, 8)
|C
|6.49
|0.600
|
|
|-
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

E-Beam Evaporation Recipes

2026-01-21T14:57:10Z

Barreraz: /* Materials Table (E-Beam #4) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

E-Beam 4 (CHA)

2025-12-15T13:32:39Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
[[File:EBeam4 Controls.jpeg|thumb|EBeam4's controls]]

== About ==
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

== Detailed Specifications ==
*Temescal 10kV power supply
*1-Temescal 8-pocket series, 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size:
**Pieces or
**9x 4” wafers for lift-off (normal incidence)
**24x 4” wafers for sidewall coverage (planetary)
**4x 6-inch wafers for normal incidence
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

== Documentation ==
*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]
*[https://wiki.nanofab.ucsb.edu/w/images/9/9b/EBeam4_Planetary_Fixture_SOP_12-11-25.pdf Planetary Fixture SOP] (Requires SUM Reservation)

== Recipes ==

=== Materials Table ===
For tables listing all available materials and deposition parameters, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|'''E-Beam Recipe Page''']].

=== Process Control Data ===
*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots]
*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots]
*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots]
*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots]

File:EBeam4 Planetary Fixture SOP 12-11-25.pdf

2025-12-15T13:30:40Z

Barreraz:

Thermal Evap 2 (Solder)

2025-05-29T16:29:04Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=Thermal2.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|location=Bay 3
|description = ?
|manufacturer = Custom
|materials =
|toolid=12
}}

== About ==

Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used.

Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.

== Detailed Specifications ==
Wafers up to 12" can be mounted.

==Documentation==
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]
*[https://wiki.nanofab.ucsb.edu/w/images/7/74/Thermal_Evap_2_pump_down_procedure-New-_5-29-25.pdf Temp Pump Down SOP as of 5-29-25]

== Recipes ==
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]]
** ''Visit this page for the materials table and evaporation parameters for all materials available.''
== Plot ==
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png Plot for Indium Deposition]

File:Thermal Evap 2 pump down procedure-New- 5-29-25.pdf

2025-05-29T16:27:47Z

Barreraz:

E-Beam 1 (Sharon)

2025-05-16T18:18:36Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1 Deposition + Beam Controllers]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/a/a1/EB1_Rotation_Fixture_SOP_5-16-25.pdf Rotation Fixture SOP]
**[[E-Beam 1 - 4-inch, 4-wafer Fixture SOP|4-inch, 4-wafer Fixture SOP]]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB1 Rotation Fixture SOP 5-16-25.pdf

2025-05-16T18:18:00Z

Barreraz:

PECVD 1 (PlasmaTherm 790)

2025-03-14T14:56:34Z

Barreraz: /* Documentation */

File:IMG 7361.jpg

2025-03-14T14:55:56Z

Barreraz:

E-Beam 3 (Temescal)

2024-09-12T22:19:33Z

Barreraz:

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Aidan Hopkins
|super2= Mike Barreraz
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{Blank}}

[https://wiki.nanofab.ucsb.edu/w/images/b/b6/EB-3_operation_instructions_7-8-24.pdf EB-3_operation_instructions_5-22-24.pdf]

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

E-Beam 3 (Temescal)

2024-07-08T18:56:12Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{Blank}}

[https://wiki.nanofab.ucsb.edu/w/images/b/b6/EB-3_operation_instructions_7-8-24.pdf EB-3_operation_instructions_5-22-24.pdf]

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

File:EB-3 operation instructions 7-8-24.pdf

2024-07-08T18:55:45Z

Barreraz:

E-Beam 4 (CHA)

2024-06-06T22:20:08Z

Barreraz: /* Documentation */

File:EB4 Operating Instructions 6-6-24.pdf

2024-06-06T22:19:50Z

Barreraz:

E-Beam 1 (Sharon)

2024-06-06T22:08:12Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/e/e3/EB1_Rotation_Fixture_SOP_6-4-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-1 operation instructions 6-6-24.pdf

2024-06-06T22:07:51Z

Barreraz:

E-Beam 1 (Sharon)

2024-06-04T19:32:10Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/5/58/EB-1_operation_instructions_6-3-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/e/e3/EB1_Rotation_Fixture_SOP_6-4-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB1 Rotation Fixture SOP 6-4-24.pdf

2024-06-04T19:31:44Z

Barreraz:

File:E-beam1.jpg

2024-06-04T17:26:55Z

Barreraz: Barreraz uploaded a new version of File:E-beam1.jpg

File:IMG 5450.jpg

2024-06-04T17:26:06Z

Barreraz:

eb1

File:IMG 5450.jpg

2024-06-04T17:22:28Z

Barreraz:

E-Beam 1 (Sharon)

2024-06-04T17:19:02Z

Barreraz: /* About */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/5/58/EB-1_operation_instructions_6-3-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/f/fd/Rotation_Fixture_SOP_5-7-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-3 operation instructions 5-22-24 V45.47.pdf

2024-06-03T21:44:47Z

Barreraz: Barreraz uploaded a new version of File:EB-3 operation instructions 5-22-24 V45.47.pdf

E-Beam 1 (Sharon)

2024-06-03T21:44:23Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=mikebarreraz@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]

=About=

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Detailed Specifications=

*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Ebara EV-A10, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/5/58/EB-1_operation_instructions_6-3-24.pdf EBeam 1 Operating Procedure]
**Operating Instructions
**[https://wiki.nanofab.ucsb.edu/w/images/f/fd/Rotation_Fixture_SOP_5-7-24.pdf Rotation Fixture SOP]

=Recipes=

*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-1 operation instructions 6-3-24.pdf

2024-06-03T21:43:45Z

Barreraz:

E-Beam 3 (Temescal)

2024-05-22T23:30:33Z

Barreraz: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]

=About=

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

=Detailed Specifications=

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=

*{{Blank}}

[https://wiki.nanofab.ucsb.edu/w/images/7/7c/EB-3_operation_instructions_5-22-24_V45.47.pdf EB-3_operation_instructions_5-22-24.pdf]

=Materials Table=
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

File:EB-3 operation instructions 5-22-24 V45.47.pdf

2024-05-22T23:30:22Z

Barreraz: