UCSB Nanofab Wiki - User contributions [en]

Packaging Recipes

2026-06-10T21:23:13Z

Biljana: /* Partial Dicing */

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Recipe example for Dual Dicing and Kerf for Ga2O3

<gallery>
File:Dicing Thick Ga2O3.jpg|Recipe example for Dicing Ga2O3
File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga2O3
</gallery>

=== Partial Dicing ===
For partial dicing, you need to do single-pass, dicing into substrate desired depth. Setting up the recipe:

1. Setup: Enter wafer thickness (example:750um), and tape (90um)

2. Cut: (if partial cut is only 100um- looking from top of the substrate)

* Index "0" - Set this to desired index (distance between two cuts, for example: 0.105mm), index "1" - set this to "0"
* Cut: Depth - Head1 "1"- Set Depth as following [(wafer thickness + tape thickness)- partial cut depth]=(750+90)-100=740um

3. Height: Check height after every 5 cuts

4. Example of partial cut:

a) Very thick Si (750um), used single pass, blade 2.187-2C-9RU-3, cutting speed=0.5mm/sec, spindle speed=30KRPM

5. Recipe example for Partial dicing into Si substrate
[[File:Partial dicing.jpeg|left|thumb|150x150px]]

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Packaging Recipes

2026-06-10T21:22:39Z

Biljana: /* Partial Dicing */

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Recipe example for Dual Dicing and Kerf for Ga2O3

<gallery>
File:Dicing Thick Ga2O3.jpg|Recipe example for Dicing Ga2O3
File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga2O3
</gallery>

=== Partial Dicing ===
For partial dicing, you need to do single-pass, dicing into substrate desired depth. Setting up the recipe:

1. Setup: Enter wafer thickness (example:750um), and tape (90um)

2. Cut: (if partial cut is only 100um- looking from top of the substrate)

* Index "0" - Set this to desired index (distance between two cuts, for example: 0.105mm), index "1" - set this to "0"
* Cut: Depth - Head1 "1"- Set Depth as following [(wafer thickness + tape thickness)- partial cut depth]=(750+90)-100=740um

3. Height: Check height after every 5 cuts

4. Example of partial cut:

a) Very thick Si (750um), used single pass, blade 2.187-2C-9RU-3, cutting speed=0.5mm/sec, spindle speed=30KRPM

5. Recipe example for Partial dicing Si substrate
[[File:Partial dicing.jpeg|left|thumb|150x150px]]

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

File:Partial dicing.jpeg

2026-06-10T21:20:58Z

Biljana:

Packaging Recipes

2026-06-10T21:20:35Z

Biljana: /* Dual-Pass Dicing */

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Example Recipe and Kerf for Ga2O3

<gallery>
File:Dicing Thick Ga2O3.jpg|Recipe example for Dicing Ga2O3
File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga2O3
</gallery>

=== Partial Dicing ===
For partial dicing, you need to do single-pass, dicing into substrate desired depth. Setting up the recipe:

1. Setup: Enter wafer thickness (example:750um), and tape (90um)

2. Cut: (if partial cut is only 100um- looking from top of the substrate)

* Index "0" - Set this to desired index (distance between two cuts, for example: 0.105mm), index "1" - set this to "0"
* Cut: Depth - Head1 "1"- Set Depth as following [(wafer thickness + tape thickness)- partial cut depth]=(750+90)-100=740um

3. Height: Check height after every 5 cuts

4. Example of partial cut:

a) Very thick Si (750um), used single pass, blade 2.187-2C-9RU-3, cutting speed=0.5mm/sec, spindle speed=30KRPM

5. Recipe example for Partial dicing Si substrate

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

File:Partial dicing.jpg

2026-06-10T21:18:29Z

Biljana:

Partial dicing

Packaging Recipes

2026-06-10T20:49:21Z

Biljana:

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.2187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Example Recipe and Kerf for Ga2O3

<gallery>
File:Dicing Thick Ga2O3.jpg|Recipe example for Dicing Ga2O3
File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga2O3
</gallery>

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Packaging Recipes

2026-06-10T20:41:10Z

Biljana: /* Dual-Pass Dicing */

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.2187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Example Recipe and Kerf for Ga2O3 <gallery>
File:Dicing Thick Ga2O3.jpg|Example of dicing recipe for Ga2O3
File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga2O3
</gallery>

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Packaging Recipes

2026-06-10T18:48:30Z

Biljana: /* Dual-Pass Dicing */ Explaining dual pass

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.2187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Example Recipe and Kerf for Ga2O3 <gallery>
File:Dicing Thick Ga2O3.jpg|Dicing recipe and kerf
File:Kerf 225um 660um thick Ga2O3 dual pass.png
</gallery>

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Packaging Recipes

2026-06-10T17:56:07Z

Biljana: /* Cut Depth Accuracy */ Kerf for sapphire and Ga2O3 using recipe with dual pass

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

Example: 650um Sapphire, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

Example: 660um Ga2O3, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~225um

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

File:Kerf 240um 650um thick Sapphire dual pass.png

2026-06-10T17:53:26Z

Biljana:

File:Kerf 225um 660um thick Ga2O3 dual pass.png

2026-06-10T17:52:52Z

Biljana:

File:Dicing thick Sapphire dual pass.jpg

2026-06-10T17:32:44Z

Biljana:

Recipe

File:Dicing Thick Ga2O3.jpg

2026-06-10T17:31:39Z

Biljana:

Recipe

Packaging Recipes

2026-06-10T17:21:52Z

Biljana: /* Recommended Dicing Parameters */ Adding dicing parameters for Ga2O3

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Atomic Layer Deposition Recipes

2026-05-21T22:43:01Z

Biljana: /* Al2O3 deposition (ALD CHAMBER 1) */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma (which can sometimes be too aggressive).

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**TEMP = 300C, Al2O3 deposition rate=1.3376 A/cyc
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH1-BDEAS-O*/300W-TEMP'''''
**Note that this recipe takes advantage of the higher-pressure range available in ch1 => faster than the lower pressure recipe available in ch3
**SiO2 deposition rate ~ 1-1.1 A/cyc
**TEMP = 300C (std), 250C, 230C, 200C, 150C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min
*Recipe name: '''''CH1-BDEAS-O*/300W[LoP]-TEMP'''''
**replicates the (lower pressure) deposition conditions in ch3 for those that need it
**SiO2 deposition rate ~ 0.9-1 A/cyc
**TEMP = 300C (std), 200C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO nested loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity (loops: 1 TMA=Al loop per 19 DEX=Zn loops)
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
Unlike Chamber 1, Chamber 3 is restricted to a lower pressure range below 240 mTorr for all deposition steps.

'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-TEMP''''' ("Thermal")
**The proto-typical ALD recipe developed back in the 70's exhibiting perfect Lewis acid/base self-limiting surface reactions!
**Al2O3 deposition rate ~ 1.1-1.2 A/cyc
**TEMP = 300C (std), 250C, 200C, 150C, 120C
**TEMP = 300C, Al2O3 deposition rate=1.1973 A/cyc
**TEMP = 200C, Al2O3 deposition rate=1.1631 A/cyc
**TEMP = 150C, Al2O3 deposition rate=1.0852 A/cyc
*Recipe Name: '''''CH3-TMA+250W/O*-TEMP''''' ("Plasma")
**Activated O* Plasma reaction instead of H2O => non-thermal
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**TEMP= 300°C (std.), 200°C, 120°C
**
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+500W/N*-TEMP'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**TEMP= 300°C Dep. (std.), 200*C, 120°C
**
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-TEMP''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc, n[632nm]~2.0-2.1
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**TEMP= 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
**
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-BDEAS+300W/O*-TEMP''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
**TEMP = 300°C (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
**TEMP = 300°C, dep. rate=1.2333 A/cyc
*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of O* plasma - still under development!
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2026-05-21T22:26:14Z

Biljana: /* Al2O3 deposition (ALD CHAMBER 3) */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma (which can sometimes be too aggressive).

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH1-BDEAS-O*/300W-TEMP'''''
**Note that this recipe takes advantage of the higher-pressure range available in ch1 => faster than the lower pressure recipe available in ch3
**SiO2 deposition rate ~ 1-1.1 A/cyc
**TEMP = 300C (std), 250C, 230C, 200C, 150C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min
**
*Recipe name: '''''CH1-BDEAS-O*/300W[LoP]-TEMP'''''
**replicates the (lower pressure) deposition conditions in ch3 for those that need it
**SiO2 deposition rate ~ 0.9-1 A/cyc
**TEMP = 300C (std), 200C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO nested loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity (loops: 1 TMA=Al loop per 19 DEX=Zn loops)
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
Unlike Chamber 1, Chamber 3 is restricted to a lower pressure range below 240 mTorr for all deposition steps.

'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-TEMP''''' ("Thermal")
**The proto-typical ALD recipe developed back in the 70's exhibiting perfect Lewis acid/base self-limiting surface reactions!
**Al2O3 deposition rate ~ 1.1-1.2 A/cyc
**TEMP = 300C (std), 250C, 200C, 150C, 120C
**TEMP = 300C, Al2O3 deposition rate=1.1973 A/cyc
**TEMP = 200C, Al2O3 deposition rate=1.1631 A/cyc
**TEMP = 150C, Al2O3 deposition rate=1.0852 A/cyc
*Recipe Name: '''''CH3-TMA+250W/O*-TEMP''''' ("Plasma")
**Activated O* Plasma reaction instead of H2O => non-thermal
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**TEMP= 300°C (std.), 200°C, 120°C
**
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+500W/N*-TEMP'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**TEMP= 300°C Dep. (std.), 200*C, 120°C
**
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-TEMP''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc, n[632nm]~2.0-2.1
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**TEMP= 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
**
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-BDEAS+300W/O*-TEMP''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
**TEMP = 300°C (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
**TEMP = 300°C, dep. rate=1.2333 A/cyc
*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of O* plasma - still under development!
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2026-05-21T22:24:47Z

Biljana: /* SiO2 deposition (ALD CHAMBER 3) */ SiO Ch3 dep rate at 300C

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma (which can sometimes be too aggressive).

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH1-BDEAS-O*/300W-TEMP'''''
**Note that this recipe takes advantage of the higher-pressure range available in ch1 => faster than the lower pressure recipe available in ch3
**SiO2 deposition rate ~ 1-1.1 A/cyc
**TEMP = 300C (std), 250C, 230C, 200C, 150C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min
**
*Recipe name: '''''CH1-BDEAS-O*/300W[LoP]-TEMP'''''
**replicates the (lower pressure) deposition conditions in ch3 for those that need it
**SiO2 deposition rate ~ 0.9-1 A/cyc
**TEMP = 300C (std), 200C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO nested loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity (loops: 1 TMA=Al loop per 19 DEX=Zn loops)
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
Unlike Chamber 1, Chamber 3 is restricted to a lower pressure range below 240 mTorr for all deposition steps.

'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-TEMP''''' ("Thermal")
**The proto-typical ALD recipe developed back in the 70's exhibiting perfect Lewis acid/base self-limiting surface reactions!
**Al2O3 deposition rate ~ 1.1-1.2 A/cyc
**TEMP = 300C (std), 250C, 200C, 150C, 120C
**TEMP = 200C, Al2O3 deposition rate=1.1631 A/cyc
**TEMP = 150C, Al2O3 deposition rate=1.0852 A/cyc
*Recipe Name: '''''CH3-TMA+250W/O*-TEMP''''' ("Plasma")
**Activated O* Plasma reaction instead of H2O => non-thermal
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**TEMP= 300°C (std.), 200°C, 120°C
**
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+500W/N*-TEMP'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**TEMP= 300°C Dep. (std.), 200*C, 120°C
**
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-TEMP''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc, n[632nm]~2.0-2.1
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**TEMP= 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
**
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-BDEAS+300W/O*-TEMP''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
**TEMP = 300°C (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
**TEMP = 300°C, dep. rate=1.2333 A/cyc
*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of O* plasma - still under development!
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2026-05-21T22:21:07Z

Biljana: /* Al2O3 deposition (ALD CHAMBER 3) */ Al2O3 at 150C dep. rate

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma (which can sometimes be too aggressive).

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH1-BDEAS-O*/300W-TEMP'''''
**Note that this recipe takes advantage of the higher-pressure range available in ch1 => faster than the lower pressure recipe available in ch3
**SiO2 deposition rate ~ 1-1.1 A/cyc
**TEMP = 300C (std), 250C, 230C, 200C, 150C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min
**
*Recipe name: '''''CH1-BDEAS-O*/300W[LoP]-TEMP'''''
**replicates the (lower pressure) deposition conditions in ch3 for those that need it
**SiO2 deposition rate ~ 0.9-1 A/cyc
**TEMP = 300C (std), 200C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO nested loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity (loops: 1 TMA=Al loop per 19 DEX=Zn loops)
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
Unlike Chamber 1, Chamber 3 is restricted to a lower pressure range below 240 mTorr for all deposition steps.

'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-TEMP''''' ("Thermal")
**The proto-typical ALD recipe developed back in the 70's exhibiting perfect Lewis acid/base self-limiting surface reactions!
**Al2O3 deposition rate ~ 1.1-1.2 A/cyc
**TEMP = 300C (std), 250C, 200C, 150C, 120C
**TEMP = 200C, Al2O3 deposition rate=1.1631 A/cyc
**TEMP = 150C, Al2O3 deposition rate=1.0852 A/cyc
*Recipe Name: '''''CH3-TMA+250W/O*-TEMP''''' ("Plasma")
**Activated O* Plasma reaction instead of H2O => non-thermal
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**TEMP= 300°C (std.), 200°C, 120°C
**
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+500W/N*-TEMP'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**TEMP= 300°C Dep. (std.), 200*C, 120°C
**
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-TEMP''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc, n[632nm]~2.0-2.1
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**TEMP= 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
**
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-BDEAS+300W/O*-TEMP''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
**TEMP = 300°C (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of O* plasma - still under development!
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Direct-Write I-Line Recipes

2026-05-20T22:24:57Z

Biljana: /* Positive Resist (MLA150) */ THMR exposre and focus for big feature size, dense

==[[Maskless Aligner (Heidelberg MLA150)]]==
Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. ''Description of litho params- different lasers available, greyscale etc.''
===Positive Resist (MLA150)===
''General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure''
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Soft Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |Post-Exposure Bake
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30s
|95°C/60s
|~ 1.1 µm
|405
|240
|5
|''none''
|AZ400K:DI 1:4
|50s
|Used MLA design (good for isolated lines 0.8-1um)
|-
|[[:File:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30s
|95°C/60s
|~ 3.3 µm
|405
|320
|6
|''none''
|AZ400K:DI 1:4
|90s
|Used MLA design
|-
|[[:File:Az p4620 photoresist data package.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|-
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 955 1.8]]
|4 krpm/30s
|95°C/90”
|~1.8 µm
|405
|210
| 10
|110°C/90s
|AZ300MIF
|60s
|UCSB design (good for dense lines~1um)
|-
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm/30s
|115°C/90”
|~ 2.7 µm
|405
|325
| - 4
|115°C/90s
|AZ300MIF
|60s
|Used MLA design
|-
|[[:File:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm/30s
|115°C/2m
|~7 µm
|405
|440
|5
|50°C/1m, ramp up, 115°C/90s
|AZ300MIF
|70s
|UCSB design 1um pillars/5um trenches]
|-
|[[:File:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm/30s
|95°C/90”
|~ 0.9 µm
|405
|250
| - 7
|110°C/90s
|AZ300MIF
|60s
|Used MLA design, [for 5um pillars/1um trench:150/5]
|-
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm/45s250 rpm/s
|100°C/60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|100°C/60s
|AZ300MiF
|20s
|line/space:
low dose for clear-field, high does for dark-field
|-
|[[:File:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|6 krpm/30sec
|100°C/60s
|0.260µm
|405
|190
|<nowiki>-4</nowiki>
|100°C/60s
|AZ300MiF
|20s
|Big pattern (>2um), dense
|}

===Negative Resist (MLA150)===
''General notes: Hotplates used, filters, laser wavelengths, etc. “Soft Bake” is right after spin, “PEB” is post-exposure bake - right after exposure. “Flood exposure” is only for AZ5214 for image reversal, after PEB.''
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Soft Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB
! width="75" |Flood
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[:File:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]
|6 krpm/30s
|95°C/60s
|~ 1.0 µm
|375
|35
| - 5
|110°C/60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|AZnLOF2020
|4 krpm/30s
|110°C/60s
|~ 2.1µm
|375
|340
| - 3
|110°C/60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[:File:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|}
===Greyscale Lithography (MLA150)===
''Description...''
{| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
! width="75" |Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
! width="75" |Rehydrate
! width="75" |PEB
! width="75" |Flood
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|AZ4620
|– krpm/30”
|95°C/60”
|
|
|
|
|
|60"
|AZ300MIF
|60"
| align="left" |
*TBD
|-
|SPR 220-7
|–3.5krpm/30”
|105°C/120” Cool 1min
|~7um
|375
|624mJ to clear large mm area, 520mJ to clear ~5um lines
|neg 20
|>1hr
|115C/90s
|AZ300MIF
|70s
|align="left"|
*TBD
|Rehydration after exposure is necessary, to prevent bubbles at PEB
|}

Atomic Layer Deposition Recipes

2026-05-15T18:48:00Z

Biljana: /* Al2O3 deposition (ALD CHAMBER 3) */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma (which can sometimes be too aggressive).

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH1-BDEAS-O*/300W-TEMP'''''
**Note that this recipe takes advantage of the higher-pressure range available in ch1 => faster than the lower pressure recipe available in ch3
**SiO2 deposition rate ~ 1-1.1 A/cyc
**TEMP = 300C (std), 250C, 230C, 200C, 150C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min
**
*Recipe name: '''''CH1-BDEAS-O*/300W[LoP]-TEMP'''''
**replicates the (lower pressure) deposition conditions in ch3 for those that need it
**SiO2 deposition rate ~ 0.9-1 A/cyc
**TEMP = 300C (std), 200C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO nested loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity (loops: 1 TMA=Al loop per 19 DEX=Zn loops)
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
Unlike Chamber 1, Chamber 3 is restricted to a lower pressure range below 240 mTorr for all deposition steps.

'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-TEMP''''' ("Thermal")
**The proto-typical ALD recipe developed back in the 70's exhibiting perfect Lewis acid/base self-limiting surface reactions!
**Al2O3 deposition rate ~ 1.1-1.2 A/cyc
**TEMP = 300C (std), 250C, 200C, 150C, 120C
**TEMP= 200C, Al2O3 deposition rate=1.1631 A/cyc
*Recipe Name: '''''CH3-TMA+250W/O*-TEMP''''' ("Plasma")
**Activated O* Plasma reaction instead of H2O => non-thermal
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**TEMP= 300°C (std.), 200°C, 120°C
**
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+500W/N*-TEMP'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**TEMP= 300°C Dep. (std.), 200*C, 120°C
**
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-TEMP''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc, n[632nm]~2.0-2.1
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**TEMP= 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
**
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-BDEAS+300W/O*-TEMP''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
**TEMP = 300°C (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of O* plasma - still under development!
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2026-05-15T18:47:11Z

Biljana: /* Al2O3 deposition (ALD CHAMBER 3) */ Added dep. rate for AL2O3 at 200C

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma (which can sometimes be too aggressive).

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH1-BDEAS-O*/300W-TEMP'''''
**Note that this recipe takes advantage of the higher-pressure range available in ch1 => faster than the lower pressure recipe available in ch3
**SiO2 deposition rate ~ 1-1.1 A/cyc
**TEMP = 300C (std), 250C, 230C, 200C, 150C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min
**
*Recipe name: '''''CH1-BDEAS-O*/300W[LoP]-TEMP'''''
**replicates the (lower pressure) deposition conditions in ch3 for those that need it
**SiO2 deposition rate ~ 0.9-1 A/cyc
**TEMP = 300C (std), 200C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO nested loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity (loops: 1 TMA=Al loop per 19 DEX=Zn loops)
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
Unlike Chamber 1, Chamber 3 is restricted to a lower pressure range below 240 mTorr for all deposition steps.

'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-TEMP''''' ("Thermal")
**The proto-typical ALD recipe developed back in the 70's exhibiting perfect Lewis acid/base self-limiting surface reactions!
**Al2O3 deposition rate ~ 1.1-1.2 A/cyc
**TEMP = 300C (std), 250C, 200C, 150C, 120C
**TEMP= 200C, Al2O3 deposition rate=1.1631 A/cyc
*Recipe Name: '''''CH3-TMA+250W/O*-TEMP''''' ("Plasma")
**Activated O* Plasma reaction instead of H2O => non-thermal
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**TEMP= 300°C (std.), 200°C, 120°C
**
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+500W/N*-TEMP'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**TEMP= 300°C Dep. (std.), 200*C, 120°C
**
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-TEMP''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc, n[632nm]~2.0-2.1
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**TEMP= 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
**
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-BDEAS+300W/O*-TEMP''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
**TEMP = 300°C (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of O* plasma - still under development!
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

PECVD Recipes

2025-12-10T18:07:38Z

Biljana: /* Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean" */ cleaning procedure after a-Si dep

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2025-11-13T22:20:00Z

Biljana: /* Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean" */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|1.5 min clean for every 1min of deposition
|-
|a-Si (max 30min long dep. in one single run)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2025-11-10T23:37:19Z

Biljana: Cleaning time after A-Si deposition (1min clean for 1min dep)

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|1min clean for every 1min of deposition
|-
|a-Si (max 1hr long dep. in one single run)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:
If > 29min total dep time
(Season + Dep)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2025-11-07T22:39:02Z

Biljana: /* Standard Cleaning Procedure (PECVD #2) */ added info regarding cleaning time for a-Si. Subject to change, since I used cleaning time user suggested ( 1.5 min clean for 1 min deposition time). Added info about max. dep. time for a-Si (1 hr- from Tony's e-mail).

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1 min. clean for every 1 min. deposition
|-
|Si3N4
|1 min. clean for every 7 min of deposition
|-
|a-Si
|1.5 min. clean for every 1 min of deposition
|-
|a-Si (max 1hr long dep. in one single run)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes

[Do wet clean for any a-Si deposition regardless of total deposition time!]
|-
|Other films:
If > 29min total dep time
(Season + Dep)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2025-10-06T20:38:03Z

Biljana: /* ICP-PECVD (Unaxis VLR) */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
#

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|TBD
|-
|Si3N4
|TBD
|-
|SiOxNy
|Same as XYZ
|}

#

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1 min. clean for every 1 min. deposition
|-
|Si3N4
|1 min. clean for every 7 min of deposition
|-
|If > 29min total dep time
(Season + Dep)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

File:STD CF4-O2 Clean PECVD2.jpg

2025-10-06T20:35:40Z

Biljana:

Thermal Evap 2 (Solder)

2025-06-19T21:35:08Z

Biljana: /* Recipes */

{{tool2|{{PAGENAME}}
|picture=Thermal2.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|location=Bay 3
|description = ?
|manufacturer = Custom
|materials =
|toolid=12
}}

== About ==

Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used.

Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.

== Detailed Specifications ==
Wafers up to 12" can be mounted.

==Documentation==
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]
*[https://wiki.nanofab.ucsb.edu/w/images/7/74/Thermal_Evap_2_pump_down_procedure-New-_5-29-25.pdf Temp Pump Down SOP as of 5-29-25]

== Recipes ==
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]]
** ''Visit this page for the materials table and evaporation parameters for all materials available.''
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Sn_deposition_in_Thermal_Evaporator2.pdf Tin deposition]

== Plot ==
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png Plot for Indium Deposition]

Thermal Evap 2 (Solder)

2025-06-19T21:34:51Z

Biljana: /* Recipes */

{{tool2|{{PAGENAME}}
|picture=Thermal2.jpg
|type = Vacuum Deposition
|super= Michael Barreraz
|super2= Don Freeborn
|location=Bay 3
|description = ?
|manufacturer = Custom
|materials =
|toolid=12
}}

== About ==

Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used.

Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.

== Detailed Specifications ==
Wafers up to 12" can be mounted.

==Documentation==
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]
*[https://wiki.nanofab.ucsb.edu/w/images/7/74/Thermal_Evap_2_pump_down_procedure-New-_5-29-25.pdf Temp Pump Down SOP as of 5-29-25]

== Recipes ==
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]]
** ''Visit this page for the materials table and evaporation parameters for all materials available.''
* Tin deposition
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Sn_deposition_in_Thermal_Evaporator2.pdf Tin deposition]

== Plot ==
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png Plot for Indium Deposition]

File:Sn deposition in Thermal Evaporator2.pdf

2025-06-19T21:30:36Z

Biljana: Biljana uploaded a new version of File:Sn deposition in Thermal Evaporator2.pdf

File:Sn deposition in Thermal Evaporator2.pdf

2025-06-19T21:29:04Z

Biljana:

Thermal Evaporation Recipes

2025-06-19T21:27:01Z

Biljana: /* Materials Table */

{{recipes|Vacuum Deposition}}

=[[Thermal Evaporator 1]]=

==Materials Table==

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
|-
! colspan=8 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #1</div>
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Current, Amp'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Dep.rate, A/sec'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|Aluminum
|Al
|2.70
|8.17
|95
|85
|1
|Used often
|-
|Chromium
|Cr
|7.20
|28.95
|95
|85
|2
|Used often
|-
|Cobalt
|Co
|8.71
|25.74
|
|
|
|
|-
|Copper
|Cu
|8.93
|20.21
|100
|
|
|Used often
|-
|Gold
|Au
|19.32
|23.18
|101.2
|122
|5
|Used often
|-
|Gold/Palladium
|Au.5/Pd.5
|15.86
|23.96
|
|
|
|
|-
|Gold/Palladium
|Au.5/Pd.4
|16.40
|23.80
|
|
|
|
|-
|Gold/Zinc
|Au.95/Zn.05
|18.72
|22.89
|101.2
|
|
|
|-
|Gold/Zinc
|Au.90/Zn.10
|18.07
|22.58
|
|
|
|
|-
|Magnezium
|Mg
|1.74
|5.48
|98.4
|
|
|
|-
|Manganese
|Mn
|7.20
|23.40
|120
|100
|
|
|-
|Nickel
|Ni
|8.90
|26.68
|100
|50
|4.5
|Used often
|-
|Nichrome
|NiCr
|8.32
|27.59
|
|100
|0.4
|
|-
|Palladium
|Pd
|12.40
|24.73
|140.5
|62
|1.5
|Used often
|-
|Silicon Monoxide
|SiO
|2.13
|10.19
|120
|70
|
|
|-
|Silver
|Ag
|10.5
|16.69
|
|
|
|
|-
|Zinc
|Zn
|7.14
|17.18
|
|50
|4.5
|Used often
|-
|Zinc Oxide
|ZnO
|5.61
|15.88
|
|
|
|
|-
|Strontium Fluoride
|SrF2
|4.28
|12.15
|200
|
|
|
|-
|Iron
|Fe
|7.86
|25.30
|
|
|
|
|-
|ITO(IndiumTinOxide)
|In2O3 - SnO2
|6.43-7.14
|0.841
|
|
|
|
|-
|Permalloy
|Ni0.1Fe0.2
|8.7
|26.40
|
|140
|0.1
|
|}

=[[Thermal Evaporator 2]]=

== Materials Table ==

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
|-
! colspan=6 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #2</div>
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|Aluminum
|Al
|2.70
|1.08
|
|
|-
|Antimony
|Sb
|6.620
|0.768
|
|
|-
|Arsenic
|As
|5.73
|0.996
|
|
|-
|Beryllium
|Be
|1.85
|0.543
|
|
|-
|Boron
|B
|2.54
|0.389
|
|
|-
|Cadmium
|Cd
|8.64
|0.682
|
|
|-
|Cadmium sulfide
|CdS
|4.83
|1.02
|
|
|-
|Cadmium telluride
|CdTe
|5.85
|0.980
|
|
|-
|Calcium fluoride
|CaF2
|3.18
|0.775
|
|Used often
|-
|Carbon (graphite)
|C
|2.25
|3.26
|
|
|-
|Chromium
|Cr
|7.20
|0.305
|155
|Used often
|-
|Cobalt
|Co
|8.71
|0.343
|
|
|-
|Copper
|Cu
|8.93
|0.437
|
|
|-
|Gallium
|Ga
|5.93
|0.593
|
|
|-
|Gallium Arsenide
|GaAs
|5.31
|1.59
|
|
|-
|Germanium
|Ge
|5.35
|0.516
|
|
|-
|Gold
|Au
|19.30
|0.381
|
|Used often
|-
|Indium
|In
|7.30
|0.841
|120
|Used often, tooling factor needs adjustment
|-
|Indium antimonide
|InSb
|5.76
|0.769
|
|
|-
|Iridium
|Ir
|22.4
|0.129
|
|
|-
|Iron
|Fe
|7.86
|0.349
|
|
|-
|Lead
|Pb
|11.3
|1.13
|
|
|-
|Lead sulfide
|PbS
|7.50
|0.566
|
|
|-
|Lithium fluoride
|LiF
|2.638
|0.778
|
|
|-
|Magnesium
|Mg
|1.74
|1.61
|
|
|-
|Magnesium oxide
|MgO
|3.58
|0.411
|
|
|-
|Magnesium Fluoride
|MgF2
|3.00 ( should be 3.18)
|0.427( should be 0.637)
|
|
|-
|Manganese
|Mn
|7.20
|0.377
|
|
|-
|Manganese(II) Sulfide
|MnS
|3.99
|0.94
|
|
|-
|Mercury
|Hg
|13.46
|0.74
|
|
|-
|Molybdenum
|Mo
|10.2
|0.257
|
|
|-
|Nickel
|Ni
|8.91
|0.331
|
|Used often
|-
|Niobium
|Nb
|8.578
|0.492
|
|
|-
|Niobium(V) Oxide
|Nb2O5
|4.47
|*1.00
|
|*z ratio has not been established
|-
|Palladium
|Pd
|12.0
|0.357
|
|
|-
|Platinum
|Pt
|21.4
|0.245
|
|
|-
|Potasium Cloride
|KCl
|1.98
|2.05
|
|
|-
|Selenium
|Se
|4.82
|0.864
|
|
|-
|Silicon
|Si
|2.32
|0.712
|
|
|-
|Silicon(II) Oxide
|SiO
|2.13
|0.87
|
|
|-
|Silicon dioxide (fused quarz)
|SiO2
|2.20
|1.07
|
|
|-
|Silver
|Ag
|10.5
|0.529
|
|
|-
|Silver bromide
|AgBr
|6.47
|1.18
|
|
|-
|Silver chloride
|AgCl
|5.56
|1.32
|
|
|-
|Sodium
|Na
|0.97
|4.8
|
|
|-
|Sodium chloride
|NaCl
|2.17
|1.57
|
|
|-
|Tantalum
|Ta
|16.6
|0.262
|
|
|-
|Tantalum(IV) oxide
|Ta2O5
|8.2
|0.30
|
|
|-
|Tin
|Sn
|7.30
|0.724
|197
|Program #9, Tooling factor=200%, cold fixture
|-
|Titanium
|Ti
|4.50
|0.628
|
|Used often
|-
|Titanium (IV) Oxide
|TiO2
|4.26
|0.40
|
|
|-
|Titanium Oxide
|TiO
|4.90
|*1.00
|
|* z ratio not established
|-
|Tungsten
|W
|19.3
|0.163
|
|
|-
|Tungsten carbide
|WC
|15.6
|0.151
|
|
|-
|Zinc
|Zn
|7.04
|0.514
|
|Used often
|-
|Zinc Oxide
|ZnO
|5.61
|0.556
|
|
|-
|Zinc Sulfide
|ZnS
|4.09
|0.775
|
|
|-
|Zirconium
|Zr
|6.51
|0.60
|
|Should be 6.49
|-
|Zirconium Oxide
|ZrO2
|5.6
|1.001
|
|
|}

== In Deposition (Thermal Evaporator 2) ==
*[[Media:Thermal evaporator 2-new Sheet1.pdf|Indium evaporation Data]]

Thermal Evaporation Recipes

2025-06-19T21:06:20Z

Biljana: /* Materials Table */

{{recipes|Vacuum Deposition}}

=[[Thermal Evaporator 1]]=

==Materials Table==

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
|-
! colspan=8 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #1</div>
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Current, Amp'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Dep.rate, A/sec'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|Aluminum
|Al
|2.70
|8.17
|95
|85
|1
|Used often
|-
|Chromium
|Cr
|7.20
|28.95
|95
|85
|2
|Used often
|-
|Cobalt
|Co
|8.71
|25.74
|
|
|
|
|-
|Copper
|Cu
|8.93
|20.21
|100
|
|
|Used often
|-
|Gold
|Au
|19.32
|23.18
|101.2
|122
|5
|Used often
|-
|Gold/Palladium
|Au.5/Pd.5
|15.86
|23.96
|
|
|
|
|-
|Gold/Palladium
|Au.5/Pd.4
|16.40
|23.80
|
|
|
|
|-
|Gold/Zinc
|Au.95/Zn.05
|18.72
|22.89
|101.2
|
|
|
|-
|Gold/Zinc
|Au.90/Zn.10
|18.07
|22.58
|
|
|
|
|-
|Magnezium
|Mg
|1.74
|5.48
|98.4
|
|
|
|-
|Manganese
|Mn
|7.20
|23.40
|120
|100
|
|
|-
|Nickel
|Ni
|8.90
|26.68
|100
|50
|4.5
|Used often
|-
|Nichrome
|NiCr
|8.32
|27.59
|
|100
|0.4
|
|-
|Palladium
|Pd
|12.40
|24.73
|140.5
|62
|1.5
|Used often
|-
|Silicon Monoxide
|SiO
|2.13
|10.19
|120
|70
|
|
|-
|Silver
|Ag
|10.5
|16.69
|
|
|
|
|-
|Zinc
|Zn
|7.14
|17.18
|
|50
|4.5
|Used often
|-
|Zinc Oxide
|ZnO
|5.61
|15.88
|
|
|
|
|-
|Strontium Fluoride
|SrF2
|4.28
|12.15
|200
|
|
|
|-
|Iron
|Fe
|7.86
|25.30
|
|
|
|
|-
|ITO(IndiumTinOxide)
|In2O3 - SnO2
|6.43-7.14
|0.841
|
|
|
|
|-
|Permalloy
|Ni0.1Fe0.2
|8.7
|26.40
|
|140
|0.1
|
|}

=[[Thermal Evaporator 2]]=

== Materials Table ==

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
|-
! colspan=6 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #2</div>
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|Aluminum
|Al
|2.70
|1.08
|
|
|-
|Antimony
|Sb
|6.620
|0.768
|
|
|-
|Arsenic
|As
|5.73
|0.996
|
|
|-
|Beryllium
|Be
|1.85
|0.543
|
|
|-
|Boron
|B
|2.54
|0.389
|
|
|-
|Cadmium
|Cd
|8.64
|0.682
|
|
|-
|Cadmium sulfide
|CdS
|4.83
|1.02
|
|
|-
|Cadmium telluride
|CdTe
|5.85
|0.980
|
|
|-
|Calcium fluoride
|CaF2
|3.18
|0.775
|
|Used often
|-
|Carbon (graphite)
|C
|2.25
|3.26
|
|
|-
|Chromium
|Cr
|7.20
|0.305
|155
|Used often
|-
|Cobalt
|Co
|8.71
|0.343
|
|
|-
|Copper
|Cu
|8.93
|0.437
|
|
|-
|Gallium
|Ga
|5.93
|0.593
|
|
|-
|Gallium Arsenide
|GaAs
|5.31
|1.59
|
|
|-
|Germanium
|Ge
|5.35
|0.516
|
|
|-
|Gold
|Au
|19.30
|0.381
|
|Used often
|-
|Indium
|In
|7.30
|0.841
|120
|Used often, tooling factor needs adjustment
|-
|Indium antimonide
|InSb
|5.76
|0.769
|
|
|-
|Iridium
|Ir
|22.4
|0.129
|
|
|-
|Iron
|Fe
|7.86
|0.349
|
|
|-
|Lead
|Pb
|11.3
|1.13
|
|
|-
|Lead sulfide
|PbS
|7.50
|0.566
|
|
|-
|Lithium fluoride
|LiF
|2.638
|0.778
|
|
|-
|Magnesium
|Mg
|1.74
|1.61
|
|
|-
|Magnesium oxide
|MgO
|3.58
|0.411
|
|
|-
|Magnesium Fluoride
|MgF2
|3.00 ( should be 3.18)
|0.427( should be 0.637)
|
|
|-
|Manganese
|Mn
|7.20
|0.377
|
|
|-
|Manganese(II) Sulfide
|MnS
|3.99
|0.94
|
|
|-
|Mercury
|Hg
|13.46
|0.74
|
|
|-
|Molybdenum
|Mo
|10.2
|0.257
|
|
|-
|Nickel
|Ni
|8.91
|0.331
|
|Used often
|-
|Niobium
|Nb
|8.578
|0.492
|
|
|-
|Niobium(V) Oxide
|Nb2O5
|4.47
|*1.00
|
|*z ratio has not been established
|-
|Palladium
|Pd
|12.0
|0.357
|
|
|-
|Platinum
|Pt
|21.4
|0.245
|
|
|-
|Potasium Cloride
|KCl
|1.98
|2.05
|
|
|-
|Selenium
|Se
|4.82
|0.864
|
|
|-
|Silicon
|Si
|2.32
|0.712
|
|
|-
|Silicon(II) Oxide
|SiO
|2.13
|0.87
|
|
|-
|Silicon dioxide (fused quarz)
|SiO2
|2.20
|1.07
|
|
|-
|Silver
|Ag
|10.5
|0.529
|
|
|-
|Silver bromide
|AgBr
|6.47
|1.18
|
|
|-
|Silver chloride
|AgCl
|5.56
|1.32
|
|
|-
|Sodium
|Na
|0.97
|4.8
|
|
|-
|Sodium chloride
|NaCl
|2.17
|1.57
|
|
|-
|Tantalum
|Ta
|16.6
|0.262
|
|
|-
|Tantalum(IV) oxide
|Ta2O5
|8.2
|0.30
|
|
|-
|Tin
|Sn
|7.30
|0.724
|200
|Program #9, Tooling factor=200%, cold fixture
|-
|Titanium
|Ti
|4.50
|0.628
|
|Used often
|-
|Titanium (IV) Oxide
|TiO2
|4.26
|0.40
|
|
|-
|Titanium Oxide
|TiO
|4.90
|*1.00
|
|* z ratio not established
|-
|Tungsten
|W
|19.3
|0.163
|
|
|-
|Tungsten carbide
|WC
|15.6
|0.151
|
|
|-
|Zinc
|Zn
|7.04
|0.514
|
|Used often
|-
|Zinc Oxide
|ZnO
|5.61
|0.556
|
|
|-
|Zinc Sulfide
|ZnS
|4.09
|0.775
|
|
|-
|Zirconium
|Zr
|6.51
|0.60
|
|Should be 6.49
|-
|Zirconium Oxide
|ZrO2
|5.6
|1.001
|
|
|}

== In Deposition (Thermal Evaporator 2) ==
*[[Media:Thermal evaporator 2-new Sheet1.pdf|Indium evaporation Data]]

Thermal Evaporation Recipes

2025-06-19T21:05:36Z

Biljana: /* Materials Table */ Updating info for Sn deposition in Thermal evaporator

{{recipes|Vacuum Deposition}}

=[[Thermal Evaporator 1]]=

==Materials Table==

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
|-
! colspan=8 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #1</div>
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Current, Amp'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Dep.rate, A/sec'''
! width="95" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|Aluminum
|Al
|2.70
|8.17
|95
|85
|1
|Used often
|-
|Chromium
|Cr
|7.20
|28.95
|95
|85
|2
|Used often
|-
|Cobalt
|Co
|8.71
|25.74
|
|
|
|
|-
|Copper
|Cu
|8.93
|20.21
|100
|
|
|Used often
|-
|Gold
|Au
|19.32
|23.18
|101.2
|122
|5
|Used often
|-
|Gold/Palladium
|Au.5/Pd.5
|15.86
|23.96
|
|
|
|
|-
|Gold/Palladium
|Au.5/Pd.4
|16.40
|23.80
|
|
|
|
|-
|Gold/Zinc
|Au.95/Zn.05
|18.72
|22.89
|101.2
|
|
|
|-
|Gold/Zinc
|Au.90/Zn.10
|18.07
|22.58
|
|
|
|
|-
|Magnezium
|Mg
|1.74
|5.48
|98.4
|
|
|
|-
|Manganese
|Mn
|7.20
|23.40
|120
|100
|
|
|-
|Nickel
|Ni
|8.90
|26.68
|100
|50
|4.5
|Used often
|-
|Nichrome
|NiCr
|8.32
|27.59
|
|100
|0.4
|
|-
|Palladium
|Pd
|12.40
|24.73
|140.5
|62
|1.5
|Used often
|-
|Silicon Monoxide
|SiO
|2.13
|10.19
|120
|70
|
|
|-
|Silver
|Ag
|10.5
|16.69
|
|
|
|
|-
|Zinc
|Zn
|7.14
|17.18
|
|50
|4.5
|Used often
|-
|Zinc Oxide
|ZnO
|5.61
|15.88
|
|
|
|
|-
|Strontium Fluoride
|SrF2
|4.28
|12.15
|200
|
|
|
|-
|Iron
|Fe
|7.86
|25.30
|
|
|
|
|-
|ITO(IndiumTinOxide)
|In2O3 - SnO2
|6.43-7.14
|0.841
|
|
|
|
|-
|Permalloy
|Ni0.1Fe0.2
|8.7
|26.40
|
|140
|0.1
|
|}

=[[Thermal Evaporator 2]]=

== Materials Table ==

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
|-
! colspan=6 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #2</div>
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|Aluminum
|Al
|2.70
|1.08
|
|
|-
|Antimony
|Sb
|6.620
|0.768
|
|
|-
|Arsenic
|As
|5.73
|0.996
|
|
|-
|Beryllium
|Be
|1.85
|0.543
|
|
|-
|Boron
|B
|2.54
|0.389
|
|
|-
|Cadmium
|Cd
|8.64
|0.682
|
|
|-
|Cadmium sulfide
|CdS
|4.83
|1.02
|
|
|-
|Cadmium telluride
|CdTe
|5.85
|0.980
|
|
|-
|Calcium fluoride
|CaF2
|3.18
|0.775
|
|Used often
|-
|Carbon (graphite)
|C
|2.25
|3.26
|
|
|-
|Chromium
|Cr
|7.20
|0.305
|155
|Used often
|-
|Cobalt
|Co
|8.71
|0.343
|
|
|-
|Copper
|Cu
|8.93
|0.437
|
|
|-
|Gallium
|Ga
|5.93
|0.593
|
|
|-
|Gallium Arsenide
|GaAs
|5.31
|1.59
|
|
|-
|Germanium
|Ge
|5.35
|0.516
|
|
|-
|Gold
|Au
|19.30
|0.381
|
|Used often
|-
|Indium
|In
|7.30
|0.841
|120
|Used often
|-
|Indium antimonide
|InSb
|5.76
|0.769
|
|
|-
|Iridium
|Ir
|22.4
|0.129
|
|
|-
|Iron
|Fe
|7.86
|0.349
|
|
|-
|Lead
|Pb
|11.3
|1.13
|
|
|-
|Lead sulfide
|PbS
|7.50
|0.566
|
|
|-
|Lithium fluoride
|LiF
|2.638
|0.778
|
|
|-
|Magnesium
|Mg
|1.74
|1.61
|
|
|-
|Magnesium oxide
|MgO
|3.58
|0.411
|
|
|-
|Magnesium Fluoride
|MgF2
|3.00 ( should be 3.18)
|0.427( should be 0.637)
|
|
|-
|Manganese
|Mn
|7.20
|0.377
|
|
|-
|Manganese(II) Sulfide
|MnS
|3.99
|0.94
|
|
|-
|Mercury
|Hg
|13.46
|0.74
|
|
|-
|Molybdenum
|Mo
|10.2
|0.257
|
|
|-
|Nickel
|Ni
|8.91
|0.331
|
|Used often
|-
|Niobium
|Nb
|8.578
|0.492
|
|
|-
|Niobium(V) Oxide
|Nb2O5
|4.47
|*1.00
|
|*z ratio has not been established
|-
|Palladium
|Pd
|12.0
|0.357
|
|
|-
|Platinum
|Pt
|21.4
|0.245
|
|
|-
|Potasium Cloride
|KCl
|1.98
|2.05
|
|
|-
|Selenium
|Se
|4.82
|0.864
|
|
|-
|Silicon
|Si
|2.32
|0.712
|
|
|-
|Silicon(II) Oxide
|SiO
|2.13
|0.87
|
|
|-
|Silicon dioxide (fused quarz)
|SiO2
|2.20
|1.07
|
|
|-
|Silver
|Ag
|10.5
|0.529
|
|
|-
|Silver bromide
|AgBr
|6.47
|1.18
|
|
|-
|Silver chloride
|AgCl
|5.56
|1.32
|
|
|-
|Sodium
|Na
|0.97
|4.8
|
|
|-
|Sodium chloride
|NaCl
|2.17
|1.57
|
|
|-
|Tantalum
|Ta
|16.6
|0.262
|
|
|-
|Tantalum(IV) oxide
|Ta2O5
|8.2
|0.30
|
|
|-
|Tin
|Sn
|7.30
|0.724
|200
|Program #9, Tooling factor=200%, cold fixture
|-
|Titanium
|Ti
|4.50
|0.628
|
|Used often
|-
|Titanium (IV) Oxide
|TiO2
|4.26
|0.40
|
|
|-
|Titanium Oxide
|TiO
|4.90
|*1.00
|
|* z ratio not established
|-
|Tungsten
|W
|19.3
|0.163
|
|
|-
|Tungsten carbide
|WC
|15.6
|0.151
|
|
|-
|Zinc
|Zn
|7.04
|0.514
|
|Used often
|-
|Zinc Oxide
|ZnO
|5.61
|0.556
|
|
|-
|Zinc Sulfide
|ZnS
|4.09
|0.775
|
|
|-
|Zirconium
|Zr
|6.51
|0.60
|
|Should be 6.49
|-
|Zirconium Oxide
|ZrO2
|5.6
|1.001
|
|
|}

== In Deposition (Thermal Evaporator 2) ==
*[[Media:Thermal evaporator 2-new Sheet1.pdf|Indium evaporation Data]]

Contact Alignment Recipes

2025-05-19T21:10:52Z

Biljana: /* SU-8 Recipes */ Update for SU8-2015 recipe

{{recipes|Lithography}}
[[category: Lithography]]

=Notes=

Below is a listing of contact lithography recipes for use with designated aligners.

Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started.

For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop.

Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate.

Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

=[[Suss Aligners (SUSS MJB-3)]]=

==Positive Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|8”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|13”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|18”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|25”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|60”
|AZ300MIF
|70”
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}

==Negative Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|5”
|110°C/60”
|60”
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated 400K Dev. Etches 5214

|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|10”
|110°C/60”
|60”
|AZ300MIF
|45”
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|10”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*Use i-line filter
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|30”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=[[Contact Aligner (SUSS MA-6)]]=

==Positive Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|3.3”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|5.4”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|7.5”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]
|3 krpm/30”
|95°C/60”
|~ 0.9 um
|8”
|AZ300MIF
|70”
| align="left" |
*Post Exposure Bake 110°C /60”
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|10.4”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|25”
|AZ300MIF
|70”
| align="left" |
|}

==Negative Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood Exposure**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|2.1”
|110°C/60”
|30"
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated (undiluted) 400K Dev. Etches 5214

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|4.2”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*For Undercut

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|2.5 krpm/30”
|110°C/60”
|~ 3.5 um
|5.0”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|1.5 krpm/45”
|110°C/60”
|~ 5um
|7”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|13.1”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=== SU-8 Recipes ===
Staff-developed recipes for SU-8:

*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]

*[https://wiki.nanofab.ucsb.edu/w/images/b/b3/SU8-2015_for_WIKi_page.pdf SU8-2015 Biljana's Updated recipe]
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]

File:SU8-2015 for WIKi page.pdf

2025-05-19T21:09:11Z

Biljana:

Contact Alignment Recipes

2025-05-19T21:08:47Z

Biljana: /* SU-8 Recipes */

{{recipes|Lithography}}
[[category: Lithography]]

=Notes=

Below is a listing of contact lithography recipes for use with designated aligners.

Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started.

For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop.

Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate.

Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

=[[Suss Aligners (SUSS MJB-3)]]=

==Positive Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|8”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|13”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|18”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|25”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|60”
|AZ300MIF
|70”
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}

==Negative Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|5”
|110°C/60”
|60”
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated 400K Dev. Etches 5214

|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|10”
|110°C/60”
|60”
|AZ300MIF
|45”
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|10”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*Use i-line filter
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|30”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=[[Contact Aligner (SUSS MA-6)]]=

==Positive Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|3.3”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|5.4”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|7.5”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]
|3 krpm/30”
|95°C/60”
|~ 0.9 um
|8”
|AZ300MIF
|70”
| align="left" |
*Post Exposure Bake 110°C /60”
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|10.4”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|25”
|AZ300MIF
|70”
| align="left" |
|}

==Negative Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood Exposure**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|2.1”
|110°C/60”
|30"
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated (undiluted) 400K Dev. Etches 5214

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|4.2”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*For Undercut

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|2.5 krpm/30”
|110°C/60”
|~ 3.5 um
|5.0”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|1.5 krpm/45”
|110°C/60”
|~ 5um
|7”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|13.1”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=== SU-8 Recipes ===
Staff-developed recipes for SU-8:

*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]

*[Biljana's Updated recipe]
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]

Contact Alignment Recipes

2025-05-19T21:08:31Z

Biljana: /* SU-8 Recipes */

{{recipes|Lithography}}
[[category: Lithography]]

=Notes=

Below is a listing of contact lithography recipes for use with designated aligners.

Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started.

For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop.

Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate.

Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

=[[Suss Aligners (SUSS MJB-3)]]=

==Positive Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|8”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|13”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|18”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|25”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|60”
|AZ300MIF
|70”
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}

==Negative Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|5”
|110°C/60”
|60”
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated 400K Dev. Etches 5214

|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|10”
|110°C/60”
|60”
|AZ300MIF
|45”
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|10”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*Use i-line filter
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|30”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=[[Contact Aligner (SUSS MA-6)]]=

==Positive Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|3.3”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|5.4”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|7.5”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]
|3 krpm/30”
|95°C/60”
|~ 0.9 um
|8”
|AZ300MIF
|70”
| align="left" |
*Post Exposure Bake 110°C /60”
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|10.4”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|25”
|AZ300MIF
|70”
| align="left" |
|}

==Negative Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood Exposure**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|2.1”
|110°C/60”
|30"
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated (undiluted) 400K Dev. Etches 5214

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|4.2”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*For Undercut

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|2.5 krpm/30”
|110°C/60”
|~ 3.5 um
|5.0”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|1.5 krpm/45”
|110°C/60”
|~ 5um
|7”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|13.1”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=== SU-8 Recipes ===
Staff-developed recipes for SU-8:

*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]

*[https://drive.google.com/drive/folders/1N0p4damL2cOR5JrH7skOnD0KS2w7_dPe SU8-2015 Recipe Update]
*[Biljana's Updated recipe]
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]

Contact Alignment Recipes

2025-05-19T19:12:08Z

Biljana: /* SU-8 Recipes */

{{recipes|Lithography}}
[[category: Lithography]]

=Notes=

Below is a listing of contact lithography recipes for use with designated aligners.

Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started.

For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop.

Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate.

Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

=[[Suss Aligners (SUSS MJB-3)]]=

==Positive Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|8”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|13”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|18”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|25”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|60”
|AZ300MIF
|70”
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}

==Negative Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|5”
|110°C/60”
|60”
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated 400K Dev. Etches 5214

|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|10”
|110°C/60”
|60”
|AZ300MIF
|45”
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|10”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*Use i-line filter
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|30”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=[[Contact Aligner (SUSS MA-6)]]=

==Positive Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|3.3”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|5.4”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|7.5”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]
|3 krpm/30”
|95°C/60”
|~ 0.9 um
|8”
|AZ300MIF
|70”
| align="left" |
*Post Exposure Bake 110°C /60”
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|10.4”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|25”
|AZ300MIF
|70”
| align="left" |
|}

==Negative Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood Exposure**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|2.1”
|110°C/60”
|30"
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated (undiluted) 400K Dev. Etches 5214

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|4.2”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*For Undercut

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|2.5 krpm/30”
|110°C/60”
|~ 3.5 um
|5.0”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|1.5 krpm/45”
|110°C/60”
|~ 5um
|7”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|13.1”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=== SU-8 Recipes ===
Staff-developed recipes for SU-8:

*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]
*[Biljana's Updated recipe]
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]

Contact Alignment Recipes

2025-05-19T19:11:58Z

Biljana: /* SU-8 Recipes */

{{recipes|Lithography}}
[[category: Lithography]]

=Notes=

Below is a listing of contact lithography recipes for use with designated aligners.

Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started.

For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop.

Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate.

Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

=[[Suss Aligners (SUSS MJB-3)]]=

==Positive Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|8”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|13”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|18”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|25”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|60”
|AZ300MIF
|70”
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}

==Negative Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|5”
|110°C/60”
|60”
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated 400K Dev. Etches 5214

|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|10”
|110°C/60”
|60”
|AZ300MIF
|45”
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|10”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*Use i-line filter
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|30”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=[[Contact Aligner (SUSS MA-6)]]=

==Positive Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|3.3”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|5.4”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|7.5”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]
|3 krpm/30”
|95°C/60”
|~ 0.9 um
|8”
|AZ300MIF
|70”
| align="left" |
*Post Exposure Bake 110°C /60”
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|10.4”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|25”
|AZ300MIF
|70”
| align="left" |
|}

==Negative Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood Exposure**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|2.1”
|110°C/60”
|30"
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated (undiluted) 400K Dev. Etches 5214

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|4.2”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*For Undercut

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|2.5 krpm/30”
|110°C/60”
|~ 3.5 um
|5.0”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|1.5 krpm/45”
|110°C/60”
|~ 5um
|7”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|13.1”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=== SU-8 Recipes ===
Staff-developed recipes for SU-8:

*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]
*[Biljana's Updated recipe}
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]

Lithography Recipes

2025-05-19T19:11:14Z

Biljana: /* Process Ranking Table */

__NOTOC__
{| class="wikitable"
|+
!Table of Contents
|-
|
==='''<big>Photolithography Processes</big>'''===

#'''UV Optical Lithography'''
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
#**[[Contact Alignment Recipes|Contact Aligner Recipes]]
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
#**[[Stepper Recipes|Stepper Recipes]]
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
#**[[Direct-Write Lithography Recipes|Direct-Write Recipes]]
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===

#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''

==Photolithography Recipes==

*'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''
*'''A''': ''Material is available for use, but no recipes are provided.''

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been run at least once
|-
|R2
| colspan="11" |Process has been run and/or procedure is documented or/and data available
|-
|R3
| colspan="11" |Process has been run, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
|-
|R6
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
|}

''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|-
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>

|-
| bgcolor="#EAECF0" |
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
|A
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
|A
|A
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
|
|
|A
|A
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}
|
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]
|
|
|
|
|A
|
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]
| bgcolor="#D0E7FF" |A
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)|R1}}
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]
|A
|A
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}
|A
|
|A
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]
|A
|A
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
|A
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
|A
|A
|A
|A
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|A
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|-
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
|}


==Lift-Off Recipes==

*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''

==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

*Under Development.

==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''

==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

===Available Variations===

*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

===Recipes Table (S-Cubed Flexi)===
{| class="wikitable"
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''Coating Material'''''
|'''''Route/Chain'''''
|'''''Name''': (User: "UCSB Users")''
|'''''Spin Speed (krpm)'''''
|'''''Bake Temp'''''
|'''''Notes'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''''Bottom Anti-Reflection Coating (BARC), DSK101 only:'''''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''1.5krpm recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''5krpm recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''''Imaging resist (UV6) only:'''''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''UV6 Coat with Developable BARC underlayer:'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''''UV6 Coat with Dry-Etchable BARC underlayer:'''''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''

*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}

==Low-K Spin-On Dielectric Recipes==

*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}

==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''

Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.
{|
|- valign="top"
| width="400" |
;<div id="PositivePR"><big>Positive Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*THMR-3600HP (Thin I-Line & Holography)
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}

'''''DUV-248nm'''''

*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}

;<div id="NegativePR"><big>Negative Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}

'''''DUV-248nm'''''

*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}

;<div id="Underlayers"><big>Underlayers</big></div>

*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}

;<div id="EBLPR"><big>E-beam resists</big></div>

*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}

;<div id="NanoImprinting"><big>Nanoimprinting</big></div>

*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}

|
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div>

*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}

;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>

*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}

;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>

*HMDS
*AP3000 BCB Adhesion Promoter
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}

;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>

''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''

*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}

;<div id="Developers"><big>Developers</big></div>

*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}
*DS2100 BCB Developer
*SU-8 Developer
*101A Developer (for DUV Flood Exposed PMGI)

;<div id="PRRemovers"><big>Photoresist Removers</big></div>

*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}
*AZ EBR ("Edge Bead Remover", PGMEA)

|}

[[Category: Processing]]
[[category: Lithography]]
[[category: Recipes]]

Lithography Recipes

2025-05-19T19:10:01Z

Biljana: /* Process Ranking Table */

__NOTOC__
{| class="wikitable"
|+
!Table of Contents
|-
|
==='''<big>Photolithography Processes</big>'''===

#'''UV Optical Lithography'''
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
#**[[Contact Alignment Recipes|Contact Aligner Recipes]]
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
#**[[Stepper Recipes|Stepper Recipes]]
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
#**[[Direct-Write Lithography Recipes|Direct-Write Recipes]]
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===

#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''

==Photolithography Recipes==

*'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''
*'''A''': ''Material is available for use, but no recipes are provided.''

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been run at least once
|-
|R2
| colspan="11" |Process has been run and/or procedure is documented or/and data available
|-
|R3
| colspan="11" |Process has been run, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
|-
|R6
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
|}

''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|-
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>

|-
| bgcolor="#EAECF0" |
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
|A
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
|A
|A
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
|
|
|A
|A
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}
|
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]
|
|
|
|
|A
|
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]
| bgcolor="EEFFFF" |A
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)|R1}}
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]
|A
|A
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}
|A
|
|A
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]
|A
|A
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
|A
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
|A
|A
|A
|A
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|A
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|-
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
|}


==Lift-Off Recipes==

*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''

==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

*Under Development.

==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''

==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

===Available Variations===

*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

===Recipes Table (S-Cubed Flexi)===
{| class="wikitable"
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''Coating Material'''''
|'''''Route/Chain'''''
|'''''Name''': (User: "UCSB Users")''
|'''''Spin Speed (krpm)'''''
|'''''Bake Temp'''''
|'''''Notes'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''''Bottom Anti-Reflection Coating (BARC), DSK101 only:'''''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''1.5krpm recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''5krpm recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''''Imaging resist (UV6) only:'''''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''UV6 Coat with Developable BARC underlayer:'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''''UV6 Coat with Dry-Etchable BARC underlayer:'''''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''

*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}

==Low-K Spin-On Dielectric Recipes==

*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}

==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''

Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.
{|
|- valign="top"
| width="400" |
;<div id="PositivePR"><big>Positive Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*THMR-3600HP (Thin I-Line & Holography)
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}

'''''DUV-248nm'''''

*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}

;<div id="NegativePR"><big>Negative Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}

'''''DUV-248nm'''''

*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}

;<div id="Underlayers"><big>Underlayers</big></div>

*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}

;<div id="EBLPR"><big>E-beam resists</big></div>

*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}

;<div id="NanoImprinting"><big>Nanoimprinting</big></div>

*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}

|
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div>

*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}

;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>

*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}

;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>

*HMDS
*AP3000 BCB Adhesion Promoter
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}

;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>

''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''

*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}

;<div id="Developers"><big>Developers</big></div>

*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}
*DS2100 BCB Developer
*SU-8 Developer
*101A Developer (for DUV Flood Exposed PMGI)

;<div id="PRRemovers"><big>Photoresist Removers</big></div>

*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}
*AZ EBR ("Edge Bead Remover", PGMEA)

|}

[[Category: Processing]]
[[category: Lithography]]
[[category: Recipes]]

Lithography Recipes

2025-05-19T19:00:16Z

Biljana: /* Photolithography Recipes */

__NOTOC__
{| class="wikitable"
|+
!Table of Contents
|-
|
==='''<big>Photolithography Processes</big>'''===

#'''UV Optical Lithography'''
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
#**[[Contact Alignment Recipes|Contact Aligner Recipes]]
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
#**[[Stepper Recipes|Stepper Recipes]]
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
#**[[Direct-Write Lithography Recipes|Direct-Write Recipes]]
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===

#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''

==Photolithography Recipes==

*'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''
*'''A''': ''Material is available for use, but no recipes are provided.''

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been run at least once
|-
|R2
| colspan="11" |Process has been run and/or procedure is documented or/and data available
|-
|R3
| colspan="11" |Process has been run, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
|-
|R6
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
|}

''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|-
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>

|-
| bgcolor="#EAECF0" |
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
|A
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
|A
|A
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
|
|
|A
|A
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}
|
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]
|
|
|
|
|A
|
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |R1
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]
|A
|A
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}
|A
|
|A
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]
|A
|A
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
|A
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
|A
|A
|A
|A
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|A
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|-
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
|}


==Lift-Off Recipes==

*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''

==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

*Under Development.

==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''

==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

===Available Variations===

*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

===Recipes Table (S-Cubed Flexi)===
{| class="wikitable"
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''Coating Material'''''
|'''''Route/Chain'''''
|'''''Name''': (User: "UCSB Users")''
|'''''Spin Speed (krpm)'''''
|'''''Bake Temp'''''
|'''''Notes'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''''Bottom Anti-Reflection Coating (BARC), DSK101 only:'''''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''1.5krpm recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''5krpm recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''''Imaging resist (UV6) only:'''''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''UV6 Coat with Developable BARC underlayer:'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''''UV6 Coat with Dry-Etchable BARC underlayer:'''''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''

*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}

==Low-K Spin-On Dielectric Recipes==

*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}

==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''

Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.
{|
|- valign="top"
| width="400" |
;<div id="PositivePR"><big>Positive Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*THMR-3600HP (Thin I-Line & Holography)
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}

'''''DUV-248nm'''''

*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}

;<div id="NegativePR"><big>Negative Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}

'''''DUV-248nm'''''

*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}

;<div id="Underlayers"><big>Underlayers</big></div>

*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}

;<div id="EBLPR"><big>E-beam resists</big></div>

*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}

;<div id="NanoImprinting"><big>Nanoimprinting</big></div>

*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}

|
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div>

*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}

;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>

*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}

;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>

*HMDS
*AP3000 BCB Adhesion Promoter
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}

;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>

''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''

*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}

;<div id="Developers"><big>Developers</big></div>

*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}
*DS2100 BCB Developer
*SU-8 Developer
*101A Developer (for DUV Flood Exposed PMGI)

;<div id="PRRemovers"><big>Photoresist Removers</big></div>

*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}
*AZ EBR ("Edge Bead Remover", PGMEA)

|}

[[Category: Processing]]
[[category: Lithography]]
[[category: Recipes]]

Lithography Recipes

2025-05-19T18:59:34Z

Biljana: /* Photolithography Recipes */

__NOTOC__
{| class="wikitable"
|+
!Table of Contents
|-
|
==='''<big>Photolithography Processes</big>'''===

#'''UV Optical Lithography'''
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
#**[[Contact Alignment Recipes|Contact Aligner Recipes]]
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
#**[[Stepper Recipes|Stepper Recipes]]
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
#**[[Direct-Write Lithography Recipes|Direct-Write Recipes]]
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===

#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''

==Photolithography Recipes==

*'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''
*'''A''': ''Material is available for use, but no recipes are provided.''

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been run at least once
|-
|R2
| colspan="11" |Process has been run and/or procedure is documented or/and data available
|-
|R3
| colspan="11" |Process has been run, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
|-
|R6
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
|}

''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|-
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>

|-
| bgcolor="#EAECF0" |
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
|A
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
|A
|A
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
|
|
|A
|A
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}
|
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]
|
|
|
|
|A
|
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |R1
|[//wiki.nanofab.ucsb.edu/wiki/Contact_Alignment_Recipes#Negative_Resist_(MA-6)]
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]
|A
|A
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}
|A
|
|A
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]
|A
|A
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
|A
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
|A
|A
|A
|A
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|A
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|-
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
|}


==Lift-Off Recipes==

*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''

==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

*Under Development.

==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''

==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

===Available Variations===

*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

===Recipes Table (S-Cubed Flexi)===
{| class="wikitable"
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''Coating Material'''''
|'''''Route/Chain'''''
|'''''Name''': (User: "UCSB Users")''
|'''''Spin Speed (krpm)'''''
|'''''Bake Temp'''''
|'''''Notes'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''''Bottom Anti-Reflection Coating (BARC), DSK101 only:'''''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''1.5krpm recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''5krpm recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''''Imaging resist (UV6) only:'''''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''UV6 Coat with Developable BARC underlayer:'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''''UV6 Coat with Dry-Etchable BARC underlayer:'''''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''

*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}

==Low-K Spin-On Dielectric Recipes==

*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}

==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''

Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.
{|
|- valign="top"
| width="400" |
;<div id="PositivePR"><big>Positive Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*THMR-3600HP (Thin I-Line & Holography)
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}

'''''DUV-248nm'''''

*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}

;<div id="NegativePR"><big>Negative Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}

'''''DUV-248nm'''''

*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}

;<div id="Underlayers"><big>Underlayers</big></div>

*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}

;<div id="EBLPR"><big>E-beam resists</big></div>

*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}

;<div id="NanoImprinting"><big>Nanoimprinting</big></div>

*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}

|
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div>

*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}

;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>

*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}

;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>

*HMDS
*AP3000 BCB Adhesion Promoter
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}

;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>

''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''

*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}

;<div id="Developers"><big>Developers</big></div>

*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}
*DS2100 BCB Developer
*SU-8 Developer
*101A Developer (for DUV Flood Exposed PMGI)

;<div id="PRRemovers"><big>Photoresist Removers</big></div>

*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}
*AZ EBR ("Edge Bead Remover", PGMEA)

|}

[[Category: Processing]]
[[category: Lithography]]
[[category: Recipes]]

Lithography Recipes

2025-05-19T18:56:56Z

Biljana: /* Photolithography Recipes */

__NOTOC__
{| class="wikitable"
|+
!Table of Contents
|-
|
==='''<big>Photolithography Processes</big>'''===

#'''UV Optical Lithography'''
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
#**[[Contact Alignment Recipes|Contact Aligner Recipes]]
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
#**[[Stepper Recipes|Stepper Recipes]]
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
#**[[Direct-Write Lithography Recipes|Direct-Write Recipes]]
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===

#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''

==Photolithography Recipes==

*'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''
*'''A''': ''Material is available for use, but no recipes are provided.''

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been run at least once
|-
|R2
| colspan="11" |Process has been run and/or procedure is documented or/and data available
|-
|R3
| colspan="11" |Process has been run, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
|-
|R6
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
|}

''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|-
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>

|-
| bgcolor="#EAECF0" |
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
|A
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
|A
|A
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
|
|
|A
|A
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}
|
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]
|
|
|
|
|A
|
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |R

| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]
|A
|A
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}
|A
|
|A
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]
|A
|A
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
|A
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
|A
|A
|A
|A
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|A
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|-
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
|}


==Lift-Off Recipes==

*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''

==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

*Under Development.

==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''

==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

===Available Variations===

*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

===Recipes Table (S-Cubed Flexi)===
{| class="wikitable"
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''Coating Material'''''
|'''''Route/Chain'''''
|'''''Name''': (User: "UCSB Users")''
|'''''Spin Speed (krpm)'''''
|'''''Bake Temp'''''
|'''''Notes'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''''Bottom Anti-Reflection Coating (BARC), DSK101 only:'''''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''1.5krpm recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''5krpm recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''''Imaging resist (UV6) only:'''''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''UV6 Coat with Developable BARC underlayer:'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''''UV6 Coat with Dry-Etchable BARC underlayer:'''''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''

*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}

==Low-K Spin-On Dielectric Recipes==

*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}

==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''

Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.
{|
|- valign="top"
| width="400" |
;<div id="PositivePR"><big>Positive Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*THMR-3600HP (Thin I-Line & Holography)
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}

'''''DUV-248nm'''''

*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}

;<div id="NegativePR"><big>Negative Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}

'''''DUV-248nm'''''

*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}

;<div id="Underlayers"><big>Underlayers</big></div>

*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}

;<div id="EBLPR"><big>E-beam resists</big></div>

*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}

;<div id="NanoImprinting"><big>Nanoimprinting</big></div>

*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}

|
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div>

*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}

;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>

*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}

;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>

*HMDS
*AP3000 BCB Adhesion Promoter
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}

;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>

''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''

*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}

;<div id="Developers"><big>Developers</big></div>

*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}
*DS2100 BCB Developer
*SU-8 Developer
*101A Developer (for DUV Flood Exposed PMGI)

;<div id="PRRemovers"><big>Photoresist Removers</big></div>

*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}
*AZ EBR ("Edge Bead Remover", PGMEA)

|}

[[Category: Processing]]
[[category: Lithography]]
[[category: Recipes]]

Contact Alignment Recipes

2025-05-19T18:50:47Z

Biljana:

{{recipes|Lithography}}
[[category: Lithography]]

=Notes=

Below is a listing of contact lithography recipes for use with designated aligners.

Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started.

For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop.

Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate.

Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

=[[Suss Aligners (SUSS MJB-3)]]=

==Positive Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|8”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|13”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|18”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|25”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|60”
|AZ300MIF
|70”
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}

==Negative Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|5”
|110°C/60”
|60”
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated 400K Dev. Etches 5214

|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|10”
|110°C/60”
|60”
|AZ300MIF
|45”
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|10”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*Use i-line filter
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|30”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=[[Contact Aligner (SUSS MA-6)]]=

==Positive Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|3.3”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|5.4”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|7.5”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]
|3 krpm/30”
|95°C/60”
|~ 0.9 um
|8”
|AZ300MIF
|70”
| align="left" |
*Post Exposure Bake 110°C /60”
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|10.4”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|25”
|AZ300MIF
|70”
| align="left" |
|}

==Negative Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood Exposure**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|2.1”
|110°C/60”
|30"
|AZ400K:DI 1:5.5 or AZ300MIF
|60" 45"
| align="left" |
*Concentrated (undiluted) 400K Dev. Etches 5214

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|4.2”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*For Undercut

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|2.5 krpm/30”
|110°C/60”
|~ 3.5 um
|5.0”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|1.5 krpm/45”
|110°C/60”
|~ 5um
|7”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut
|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|13.1”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=== SU-8 Recipes ===
Staff-developed recipes for SU-8:

*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]

Thermal Processing Recipes

2025-04-23T18:18:15Z

Biljana: /* Available Recipes (Tystar 8300) */

==[[Tube Furnace (Tystar 8300)|Tystar 8300]]==

=== Available Recipes (Tystar 8300) ===
The following are the available recipes on each furnace tube:

'''Tube 1: Various applications'''
*SOG425.001 - ''Spin-On Glass Cure''
*ALGAAS.001 - ''Oxidation of AlGaAs''
*ANNEAL.001 - ''Anneal with variable time and temp.''
'''Tube 2: Cleaned Silicon Only'''
*WET1050.002 - ''WetOx at 1050°C''
* DRY1050.002 - ''DryOx at 1050°C''
*WETVAR.002 - ''WetOx, variable temp.''
*DRYVAR.002 - ''DryOx, variable temp.''
'''Tube 3: Processed silicon or other anneals.'''
*WET1050.003 - ''WetOx at 1050°C''
*DRY1050.003 - ''DryOx at 1050°C''
*WETVAR.003 - ''WetOx, variable temp.''
*DRYVAR.003 - ''DryOx, variable temp.''
*ANNEAL.003 - ''Anneal with variable time and temperature''
Data: Tube3, Recipe "WetVar.003" at 750C, TOX rate= 0.228nm/min, n@632.8nm= 1.47067, BHF etch rate=79nm/min

===Process Limits (Tystar 8300)===
*'''Max temperatures (Tystar 8300)'''
**Tube 1: 800°C max.
**Tube 2: 1100°C, for ≤24hr
**Tube 3: 1100°C, for ≤24hr
*'''DRY1050''' may not be run for more than 3hrs. O2 flow is 3SLPM, which is too high to run for more than 3hr without depleting the bottle.
**Contact supervisor for other options, such as '''''DRYVAR''''' @ 1100°C, or with lower O2 flow.
*'''WET1050''' may not be run for more than 24hrs without authorization, due to O2 bottle capacity. Contact supervisor if need to run longer.
*No recipe should be run with >1slpm gas flow without discussing with supervisor first, or gas bottles will be depleted very fast and likely run out during your process.
=== Wafer Cleaning ===
For Tube #2, Silicon wafer cleaning, the following process is recommended:

# If brand new wafers, they should be already relatively clean. Otherwise Acetone/ISO clean might be needed to remove particles - optional
# Use [[Wet Benches#Wafer Toxic Corrosive Benches|Bay 4 toxic corrosive bench]] to submerge wafers for 20min in PureStrip @ 60°C. Replenish if needed, since PureStrip degrades after a few days at 60°C.
# QDR - rinse.
# Transport to Bay 5 HF bench (keep in water - optional) - use Chemical Transport Container.
# Submerge in HF for 10min.
# Rinse in DI 3x at HF bench. Pure HF goes down special drain, while rinse water can go down normal drain.
# Dry with Nitrogen gun OR SRD "Spin Rinse Dryer" at Bay 5.
# Ready to load into Tystar quartz boats, run recipe on Tystar.

===Oxidation Recipes (Tystar 8300)===

==== Calculating Oxidation Times ====
Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.
Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.

Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy.

A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator].

====1050°C Dry Oxidation====

*Recipe Name: '''''DRY1050'''''
*Tube #2 for Cleaned Silicon Only
*Tube #3 for processed silicon or other anneals.

=====Simulation Parameters=====

*Partial Pressure = 1.12 (best fit to measured data below)
*<100>, 1050°C, 10Å Native Oxide, no dopants

[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.|none|thumb|300x300px|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]

====1050°C Wet Oxidation====

*Recipe Name: '''''WET1050'''''
*Tube #2 for Cleaned Silicon Only
*Tube #3 for processed silicon or other anneals.

=====Simulation Parameters=====

*Partial Pressure = 1.09 (best fit to measured data below)
*<100>, 1050°C, 10Å Native Oxide, no dopants

{|
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]
|}

====AlGaAs Oxidation====
A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.

==Wafer Substrate Bonding==

===Direct Bonding===
Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]] or HeraTherm oven.

Il addition, the [[Flip-Chip Bonder (Finetech)|Fine-Tech Flip-Chip Bonder]] can perform aligned bonding of various-sized pieces. The Fine-Tech can do metal-to-metal thermo-compression bonding with ultrasonic assist.

The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)|Goniometer]] allow for surface prep/inspection prior to bonding.

===Bonding with Intermediate/adhesive layer===
The [[Wafer Bonder (Logitech WBS7)|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax or other intermediate layer, while applying pressure to the top surface to improve uniform wax distribution. Please see the '''''Recipes > Packaging > [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|Logitech Bonder]]''''' page for recipes.

==[[Tube Furnace AlGaAs Oxidation (Lindberg)]]==
Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.

Maximum time is about 3 hours before the bubbler water temperature becomes uncontrolled.

Recipes are available, please ask the NanoFab Process group staff.

==[[Rapid Thermal Processor (SSI Solaris 150)]]==
[[Category:Processing]]
{{todo|Add starting recipes for RTP}}

== Rapid Thermal Annealer (AET RTA) ==
{{todo|Add starting recipes for RTA}}

Thermal Processing Recipes

2025-04-23T18:17:53Z

Biljana: /* Tystar 8300 */ added index

==[[Tube Furnace (Tystar 8300)|Tystar 8300]]==

=== Available Recipes (Tystar 8300) ===
The following are the available recipes on each furnace tube:

'''Tube 1: Various applications'''
*SOG425.001 - ''Spin-On Glass Cure''
*ALGAAS.001 - ''Oxidation of AlGaAs''
*ANNEAL.001 - ''Anneal with variable time and temp.''
'''Tube 2: Cleaned Silicon Only'''
*WET1050.002 - ''WetOx at 1050°C''
* DRY1050.002 - ''DryOx at 1050°C''
*WETVAR.002 - ''WetOx, variable temp.''
*DRYVAR.002 - ''DryOx, variable temp.''
'''Tube 3: Processed silicon or other anneals.'''
*WET1050.003 - ''WetOx at 1050°C''
*DRY1050.003 - ''DryOx at 1050°C''
*WETVAR.003 - ''WetOx, variable temp.''
*DRYVAR.003 - ''DryOx, variable temp.''
*ANNEAL.003 - ''Anneal with variable time and temperature''
Data: Tube3, Recipe "WetVAr.003" at 750C, TOX rate= 0.228nm/min, n@632.8nm= 1.47067, BHF etch rate=79nm/min

===Process Limits (Tystar 8300)===
*'''Max temperatures (Tystar 8300)'''
**Tube 1: 800°C max.
**Tube 2: 1100°C, for ≤24hr
**Tube 3: 1100°C, for ≤24hr
*'''DRY1050''' may not be run for more than 3hrs. O2 flow is 3SLPM, which is too high to run for more than 3hr without depleting the bottle.
**Contact supervisor for other options, such as '''''DRYVAR''''' @ 1100°C, or with lower O2 flow.
*'''WET1050''' may not be run for more than 24hrs without authorization, due to O2 bottle capacity. Contact supervisor if need to run longer.
*No recipe should be run with >1slpm gas flow without discussing with supervisor first, or gas bottles will be depleted very fast and likely run out during your process.
=== Wafer Cleaning ===
For Tube #2, Silicon wafer cleaning, the following process is recommended:

# If brand new wafers, they should be already relatively clean. Otherwise Acetone/ISO clean might be needed to remove particles - optional
# Use [[Wet Benches#Wafer Toxic Corrosive Benches|Bay 4 toxic corrosive bench]] to submerge wafers for 20min in PureStrip @ 60°C. Replenish if needed, since PureStrip degrades after a few days at 60°C.
# QDR - rinse.
# Transport to Bay 5 HF bench (keep in water - optional) - use Chemical Transport Container.
# Submerge in HF for 10min.
# Rinse in DI 3x at HF bench. Pure HF goes down special drain, while rinse water can go down normal drain.
# Dry with Nitrogen gun OR SRD "Spin Rinse Dryer" at Bay 5.
# Ready to load into Tystar quartz boats, run recipe on Tystar.

===Oxidation Recipes (Tystar 8300)===

==== Calculating Oxidation Times ====
Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.
Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.

Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy.

A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator].

====1050°C Dry Oxidation====

*Recipe Name: '''''DRY1050'''''
*Tube #2 for Cleaned Silicon Only
*Tube #3 for processed silicon or other anneals.

=====Simulation Parameters=====

*Partial Pressure = 1.12 (best fit to measured data below)
*<100>, 1050°C, 10Å Native Oxide, no dopants

[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.|none|thumb|300x300px|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]

====1050°C Wet Oxidation====

*Recipe Name: '''''WET1050'''''
*Tube #2 for Cleaned Silicon Only
*Tube #3 for processed silicon or other anneals.

=====Simulation Parameters=====

*Partial Pressure = 1.09 (best fit to measured data below)
*<100>, 1050°C, 10Å Native Oxide, no dopants

{|
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]
|}

====AlGaAs Oxidation====
A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.

==Wafer Substrate Bonding==

===Direct Bonding===
Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]] or HeraTherm oven.

Il addition, the [[Flip-Chip Bonder (Finetech)|Fine-Tech Flip-Chip Bonder]] can perform aligned bonding of various-sized pieces. The Fine-Tech can do metal-to-metal thermo-compression bonding with ultrasonic assist.

The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)|Goniometer]] allow for surface prep/inspection prior to bonding.

===Bonding with Intermediate/adhesive layer===
The [[Wafer Bonder (Logitech WBS7)|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax or other intermediate layer, while applying pressure to the top surface to improve uniform wax distribution. Please see the '''''Recipes > Packaging > [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|Logitech Bonder]]''''' page for recipes.

==[[Tube Furnace AlGaAs Oxidation (Lindberg)]]==
Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.

Maximum time is about 3 hours before the bubbler water temperature becomes uncontrolled.

Recipes are available, please ask the NanoFab Process group staff.

==[[Rapid Thermal Processor (SSI Solaris 150)]]==
[[Category:Processing]]
{{todo|Add starting recipes for RTP}}

== Rapid Thermal Annealer (AET RTA) ==
{{todo|Add starting recipes for RTA}}

UV Ozone Reactor

2025-04-23T18:16:06Z

Biljana: /* About */ adding data for UV ozone 20min on Si quarter that was previously BHF etched [no native oxide].

{{tool2|{{PAGENAME}}
|picture=Ozone.jpg
|type = Dry Etch
|super= Lee Sawyer
|super2= Tony Bosch
|model=144AX
|location=Bay 5
|description = UV Ozone Cleaner
|manufacturer = Jelight
}}
==About==
UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.

==Documentation==

*[https://wiki.nanofab.ucsb.edu/w/images/3/3e/UV_Ozone_SOP_Rev_A.pdf UV Ozone Reactor SOP]
*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual]
*Data [Si quarter, 20min UV Ozone ~1nm thick oxide]

Thermal Processing Recipes

2025-04-23T18:12:44Z

Biljana: /* Available Recipes (Tystar 8300) */ Adding TOX rate and BHF etch rate for Thermally grown Oxide in Tube #3 at 750C

==[[Tube Furnace (Tystar 8300)|Tystar 8300]]==

=== Available Recipes (Tystar 8300) ===
The following are the available recipes on each furnace tube:

'''Tube 1: Various applications'''
*SOG425.001 - ''Spin-On Glass Cure''
*ALGAAS.001 - ''Oxidation of AlGaAs''
*ANNEAL.001 - ''Anneal with variable time and temp.''
'''Tube 2: Cleaned Silicon Only'''
*WET1050.002 - ''WetOx at 1050°C''
* DRY1050.002 - ''DryOx at 1050°C''
*WETVAR.002 - ''WetOx, variable temp.''
*DRYVAR.002 - ''DryOx, variable temp.''
'''Tube 3: Processed silicon or other anneals.'''
*WET1050.003 - ''WetOx at 1050°C''
*DRY1050.003 - ''DryOx at 1050°C''
*WETVAR.003 - ''WetOx, variable temp.''
*DRYVAR.003 - ''DryOx, variable temp.''
*ANNEAL.003 - ''Anneal with variable time and temperature''
Data: Tube3, Recipe "WetVAr.003" at 750C, TOX rate= 0.228nm/min, BHF etch rate=79nm/min

===Process Limits (Tystar 8300)===
*'''Max temperatures (Tystar 8300)'''
**Tube 1: 800°C max.
**Tube 2: 1100°C, for ≤24hr
**Tube 3: 1100°C, for ≤24hr
*'''DRY1050''' may not be run for more than 3hrs. O2 flow is 3SLPM, which is too high to run for more than 3hr without depleting the bottle.
**Contact supervisor for other options, such as '''''DRYVAR''''' @ 1100°C, or with lower O2 flow.
*'''WET1050''' may not be run for more than 24hrs without authorization, due to O2 bottle capacity. Contact supervisor if need to run longer.
*No recipe should be run with >1slpm gas flow without discussing with supervisor first, or gas bottles will be depleted very fast and likely run out during your process.
=== Wafer Cleaning ===
For Tube #2, Silicon wafer cleaning, the following process is recommended:

# If brand new wafers, they should be already relatively clean. Otherwise Acetone/ISO clean might be needed to remove particles - optional
# Use [[Wet Benches#Wafer Toxic Corrosive Benches|Bay 4 toxic corrosive bench]] to submerge wafers for 20min in PureStrip @ 60°C. Replenish if needed, since PureStrip degrades after a few days at 60°C.
# QDR - rinse.
# Transport to Bay 5 HF bench (keep in water - optional) - use Chemical Transport Container.
# Submerge in HF for 10min.
# Rinse in DI 3x at HF bench. Pure HF goes down special drain, while rinse water can go down normal drain.
# Dry with Nitrogen gun OR SRD "Spin Rinse Dryer" at Bay 5.
# Ready to load into Tystar quartz boats, run recipe on Tystar.

===Oxidation Recipes (Tystar 8300)===

==== Calculating Oxidation Times ====
Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.
Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.

Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy.

A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator].

====1050°C Dry Oxidation====

*Recipe Name: '''''DRY1050'''''
*Tube #2 for Cleaned Silicon Only
*Tube #3 for processed silicon or other anneals.

=====Simulation Parameters=====

*Partial Pressure = 1.12 (best fit to measured data below)
*<100>, 1050°C, 10Å Native Oxide, no dopants

[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.|none|thumb|300x300px|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]

====1050°C Wet Oxidation====

*Recipe Name: '''''WET1050'''''
*Tube #2 for Cleaned Silicon Only
*Tube #3 for processed silicon or other anneals.

=====Simulation Parameters=====

*Partial Pressure = 1.09 (best fit to measured data below)
*<100>, 1050°C, 10Å Native Oxide, no dopants

{|
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]
|}

====AlGaAs Oxidation====
A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.

==Wafer Substrate Bonding==

===Direct Bonding===
Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]] or HeraTherm oven.

Il addition, the [[Flip-Chip Bonder (Finetech)|Fine-Tech Flip-Chip Bonder]] can perform aligned bonding of various-sized pieces. The Fine-Tech can do metal-to-metal thermo-compression bonding with ultrasonic assist.

The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)|Goniometer]] allow for surface prep/inspection prior to bonding.

===Bonding with Intermediate/adhesive layer===
The [[Wafer Bonder (Logitech WBS7)|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax or other intermediate layer, while applying pressure to the top surface to improve uniform wax distribution. Please see the '''''Recipes > Packaging > [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|Logitech Bonder]]''''' page for recipes.

==[[Tube Furnace AlGaAs Oxidation (Lindberg)]]==
Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.

Maximum time is about 3 hours before the bubbler water temperature becomes uncontrolled.

Recipes are available, please ask the NanoFab Process group staff.

==[[Rapid Thermal Processor (SSI Solaris 150)]]==
[[Category:Processing]]
{{todo|Add starting recipes for RTP}}

== Rapid Thermal Annealer (AET RTA) ==
{{todo|Add starting recipes for RTA}}