UCSB Nanofab Wiki - User contributions [en]

PECVD Recipes

2026-09-28T21:34:44Z

Biljana: /* Si3N4 [ICP-PECVD] */ SiN parameters

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* [https://docs.google.com/spreadsheets/d/1xvXqgFaKT6vH4ZSAfOaqAYnx_qyEqzNZFqTc-OGENzw/edit?gid=1168016715#gid=1168016715 Si3N4<nowiki> [ICP-PECVD]- Standard Recipe</nowiki>] - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."
**this film has a low particle count (good for waveguides)
**requires 30sec O2 plasma using PE-II beforehand
**dep.rate=90.86nm/min, refractive index at 632.8nm=2.04372, refractive index at 1550nm=2.00804, stress=-183MPa
**Cauchy A=2.004+/-0.0013, B=0.00745+/-0.00072928, C=0.00999+/-0.00011018

* *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit?gid=1670372499#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T21:12:07Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* [https://docs.google.com/spreadsheets/d/1xvXqgFaKT6vH4ZSAfOaqAYnx_qyEqzNZFqTc-OGENzw/edit?gid=1168016715#gid=1168016715 Si3N4<nowiki> [ICP-PECVD]- Standard Recipe</nowiki>] - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit?gid=1670372499#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T21:11:46Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* [https://docs.google.com/spreadsheets/d/1xvXqgFaKT6vH4ZSAfOaqAYnx_qyEqzNZFqTc-OGENzw/edit?gid=1168016715#gid=1168016715 Si3N4 [ICP-PECVD - Standard Recipe] - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit?gid=1670372499#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

File:SiN 250C v2 - Std.xlsx

2026-09-28T21:10:53Z

Biljana:

PECVD Recipes

2026-09-28T21:09:24Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3N4 [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit?gid=1670372499#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T21:08:44Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3N4 [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit?gid=1670372499#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T21:08:14Z

Biljana: /* Old Data */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3n4 [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit?gid=1670372499#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T21:07:57Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3n4 [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit?gid=1670372499#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

**Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T21:07:29Z

Biljana: /* Old Data */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3n4 [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

**Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T21:07:07Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3n4 [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit?gid=1670372499#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:53:09Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3n4 [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:52:44Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:52:12Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* [https://docs.google.com/spreadsheets/d/1xvXqgFaKT6vH4ZSAfOaqAYnx_qyEqzNZFqTc-OGENzw/edit?gid=1168016715#gid=1168016715 Si3N4<nowiki> [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:51:05Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3N4<nowiki> [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:50:14Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* [https://docs.google.com/spreadsheets/d/1xvXqgFaKT6vH4ZSAfOaqAYnx_qyEqzNZFqTc-OGENzw/edit?gid=1168016715 Si3N4<nowiki> [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:48:38Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* Si3N4 [ICP-PECVD - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:47:33Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

* [https://docs.google.com/spreadsheets/d/1xvXqgFaKT6vH4ZSAfOaqAYnx_qyEqzNZFqTc-OGENzw/edit?gid=1168016715#gid=1168016715 Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:40:32Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
**recipe "SiN 250C-v2", sequence "SiN 250C-v2", category "SiN Std."

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:21:01Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:19:22Z

Biljana: /* Old Data */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:17:28Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
*<s>[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''</s>"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:17:03Z

Biljana: /* Si3N4 [ICP-PECVD] */

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
*<s>[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"</s> ''(has a high particle count)''

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
*<s>[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''</s>"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T20:14:23Z

Biljana: /* Si3N4 [ICP-PECVD] */ new Sin recipe

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
*<s>[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"</s> ''(has a high particle count)''

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

PECVD Recipes

2026-09-28T17:32:58Z

Biljana: Adding a new SiN recipe

{{recipes|Vacuum Deposition}}

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO2<nowiki> [PECVD 1] Standard Recipe</nowiki>]

*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==SiN deposition (PECVD #1)==

*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier

==Low Stress Si3N4 (PECVD#1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si3N4<nowiki> [PECVD 1] Standard Recipe</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier

:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]

==SiOxNy deposition (PECVD #1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiOxNy Standard Recipe]
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiOxNy Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiOxNy1000A Thickness uniformity 2014]

==Standard Cleaning Procedure (PECVD #1)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully.

The clean is done in two steps:

#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.

{| class="wikitable"
|+Table of Cleaning Times
!Film Dep'd
!Cleaning Time
|-
|SiO2
|1 min clean for every 1 min dep
|-
|Si3N4
|1 min clean for every 7 min dep
|-
|SiOxNy
|Same as SiO2
|-
|a-Si
|Same time as Si3N4
|}

===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===

==SiO2 deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO2<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO2<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

*SiO2 deposition rate at 150C is 35nm/min

==SiN deposition (PECVD #2)==

*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021

==Low-Stress SiN deposition (PECVD #2)==
''Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)''

*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"

**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si3N4<nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Current Process Control Data</nowiki>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si3N4 Process Control Data]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si3N4<nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]
*:''Old Versions of the recipe:''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''

===Low-Stress SiN 3xTime (PECVD #2)===
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''

*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date

==Amorphous-Si deposition (PECVD #2)==

*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations

==Standard Cleaning Procedure (PECVD #2)==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1min. clean for every 1min. deposition
|-
|Si3N4
|1min. clean for every 7min. of deposition
|-
|a-Si
|2 min clean for every 1min of deposition
|-
|a-Si (max 60min dep before breaking it up and cleaning the chamber)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|-
|Other films:(max 60min long dep. in one single run)
|If > 29min total dep time
(Season + Dep)

Wet Clean the Upper Lid/Chamber

DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4)''' installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.

==Process Control Data (Unaxis ICP-PECVD)==
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4]
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4]

==Low Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''

*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===

* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019

*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==High Deposition Rate SiO2 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO2<nowiki> [ICP-PECVD] - Historical Data</nowiki>]

==Gap-Fill SiO2 [ICP-PECVD]==
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.

The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.

*Category = <code>SiO2 GapFill - Std.</code>
*FLOW: <code>SiO2 GapFill 250C</code>
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code>
*Deposition rate = 99.968nm/min [9/20/23]

==Si3N4 [ICP-PECVD]==

*Si3N4 [ICP-PECVD] - Standard Recipe - ''"SiN 250C-v2- New recipe since April 2026"''
*<s>[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"</s> ''(has a high particle count)''

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

==Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"

* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
** Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"

*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si3N4<nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021

==Low Stress Si3N4 [ICP-PECVD]==

*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si3N4<nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]
**Lists film data, such as dep rate, stress, particle count, refractive index etc.

=== Old Data ===
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si3N4<nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019

==Standard Seasoning Procedure [ICP-PECVD]==
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film].
Seasoning recipes:
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO2 seasoning - Std ]
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]

==General Recipe Notes (Unaxis VLR ICP-PECVD)==

*RF1 = Bias
*RF2 = ICP Power
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
*Maximum SiO2 Dep. thickness allowed: 800nm
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.

Direct-Write Lithography Recipes

2026-08-04T15:56:20Z

Biljana: /* Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below. */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

=== Positive Resist (Raith PicoMasterXF) ===

=== Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below. ===
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|405
|30
|0
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|405
|450 (or higher)
| +2
|110°C, 60s
|''none''
|AZ300MIF
|30s
|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
|-
|}
<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal

<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.

Direct-Write Lithography Recipes

2026-08-04T15:54:30Z

Biljana: /* Negative Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

===Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.===
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|405
|30
|0
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|405
|450 (or higher)
| +2
|110°C, 60s
|''none''
|AZ300MIF
|30s
|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
|-
|}
<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal

<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.

Direct-Write Lithography Recipes

2026-08-04T15:53:22Z

Biljana: /* Negative Resist (Raith PicoMasterXF)- WIP */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

===Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.===
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|405
|30
|0
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|405
|450 (or higher)
| +2
|110°C, 60s
|''none''
|AZ300MIF
|30s
|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
|-
|}
<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.

Direct-Write Lithography Recipes

2026-08-04T15:53:09Z

Biljana: /* Negative Resist (Raith PicoMasterXF)- WIP */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

===Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.===
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|405
|30
|0
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|405
|450 (or higher)
| +2
|110°C, 60s
|''none''
|AZ300MIF
|30s
|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
|-
|}
<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.

Direct-Write Lithography Recipes

2026-07-30T23:05:33Z

Biljana: /* Negative Resist (Raith PicoMasterXF)- WIP */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

===Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.===
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]** - WIP
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|405
|WIP
|WIP
|110°C, 60s
|60"
|AZ300MIF
|60s
|WIP
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|405
|450 (or higher)
| +2
|110°C, 60s
|''none''
|AZ300MIF
|30s
|Used UCSB design (dense lines are patterned negative resist)
line/gap=1um/1um)
|-
|}

Direct-Write Lithography Recipes

2026-07-30T23:05:08Z

Biljana: /* Negative Resist (Raith PicoMasterXF)- WIP */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

===Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.===
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]** - WIP
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|405
|
|
|110°C, 60s
|60"
|AZ300MIF
|60s
|
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|405
|450 (or higher)
| +2
|110°C, 60s
|''none''
|AZ300MIF
|30s
|Used UCSB design (dense lines are patterned negative resist)
line/gap=1um/1um)
|-
|}

Direct-Write Lithography Recipes

2026-07-30T22:34:27Z

Biljana: /* Negative Resist (Raith PicoMasterXF)- WIP */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

===Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.===
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]** - WIP
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|405
|
|
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|405
|
|
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|}

Direct-Write Lithography Recipes

2026-07-30T22:33:16Z

Biljana: /* Negative Resist (Raith PicoMasterXF)- WIP */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]** - WIP
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|405
|
|
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|405
|
|
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|}

Direct-Write Lithography Recipes

2026-07-30T22:32:25Z

Biljana: /* Positive Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|340
| -3
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, >>1um/1um)
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|}

Direct-Write Lithography Recipes

2026-07-30T18:50:33Z

Biljana: /* Positive Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|405
|
|
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|}

Direct-Write Lithography Recipes

2026-07-29T23:36:34Z

Biljana: /* Positive Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|200
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|180
| -1
|
|115°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|}

Direct-Write Lithography Recipes

2026-07-29T22:51:09Z

Biljana: /* Positive Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.65um/0.65um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|}

Direct-Write Lithography Recipes

2026-07-29T17:16:38Z

Biljana: /* Negative Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|}

===Negative Resist (Raith PicoMasterXF)- WIP===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|}

Direct-Write Lithography Recipes

2026-07-29T17:16:23Z

Biljana: /* Negative Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|}

===Negative Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-

Direct-Write Lithography Recipes

2026-07-29T17:12:48Z

Biljana: /* Maskless Aligner (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|}

===Negative Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

Direct-Write Lithography Recipes

2026-07-29T17:12:27Z

Biljana: /* Positive Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|}

===Negative Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

Direct-Write Lithography Recipes

2026-07-29T17:10:30Z

Biljana: /* Positive Resist (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|130
|0
|
|''none''
|AZ400K:DI 1:4
|50s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|200
| -1
|
|''none''
|AZ400K:DI 1:4
|90s
|Used UCSB design
(dense line/gap, 1um/1um)
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|120
| 0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|0
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design
(dense line/gap, 0.6um/0.6um)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|}

Direct-Write Lithography Recipes

2026-07-29T17:00:38Z

Biljana: /* Maskless Aligner (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.

Direct-Write Lithography Recipes

2026-07-29T16:58:44Z

Biljana: /* Maskless Aligner (Raith PicoMasterXF) */

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

==[[Maskless Aligner (Raith PicoMasterXF)]]==

===Positive Resist (Raith PicoMasterXF)===

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below

Direct-Write Lithography Recipes

2026-07-29T16:56:04Z

Biljana:

Lithography Recipes

2026-07-29T00:03:27Z

Biljana: /* Process Ranking Table */

__NOTOC__
{| class="wikitable"
|+
!Table of Contents
|-
|
==='''<big>Photolithography Processes</big>'''===

#'''UV Optical Lithography'''
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
#**[[Contact Alignment Recipes|Contact Aligner Recipes]]
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
#**[[Stepper Recipes|Stepper Recipes]]
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
#**[[Direct-Write Lithography Recipes|Direct-Write Recipes]]
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150 (I-Line)]]
#***[[Direct-Write Lithography Recipes#E-Beam Lithography Recipes (Raith EBPG 5150+)|Raith EBPG 5150+ (Electron-Beam)]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB (Ion Beam)]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#*[[Photolithography - Improving Adhesion Photoresist Adhesion|HMDS Process for Improving Adhesion]]
#*[[Photolithography - Manual Edge-Bead Removal Techniques|Edge-Bead Removal Techniques]]
#*[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf Photoresist reflow (MicroChem)]
#*[[Lithography Calibration - Analyzing a Focus-Exposure Matrix]]
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===

#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''
*''For small samples (<1cm) some techniques here to reduce edge-bead via shims.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''

==Photolithography Recipes==

*'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''
*'''A''': ''Material is available for use, but no recipes are provided.''

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been ran at least once
|-
|R2
| colspan="11" |Process has been ran and procedure is documented
|-
|R3
| colspan="11" |Process has been ran, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''no''' in-Situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' in-Situ control available
|-
|R6
| colspan="11" |Process has a documented procedure and control charts/limits available. Controlled process.
|}
''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|-
! colspan="8" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>

|-
| bgcolor="#EAECF0" |
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! colspan="2" align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|{{rl|Direct-Write Lithography Recipes|Positive Resist (Raith PicoMaster)}}

|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|{{rl|Direct-Write Lithography Recipes|Positive Resist (Raith PicoMaster)|R1}}

|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
|A
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|{{rl|Direct-Write Lithography Recipes|Positive Resist (Raith)|R3}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
|A
|A
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
|
|
|A
|A
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}
|
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]
|
|
|
|
|A
|
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R3}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]
| bgcolor="#D0E7FF" |A
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)|R1}}
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]
|A
|A
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}
|A
|
|A
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]
|A
|A
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
|A
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
|A
|A
|A
|A
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R3}}
|
|A
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|-
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
|}


==Lift-Off Recipes==

*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple [[DUV Flood Expose|DUV Flood exposure]]/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
**Updates to the process:
***You now only need to do 5min [[DUV Flood Expose|DUV Flood exposure]] each cycle (lamp optics were replaced)
***Use the new "101B" developer, which replaced the "SAL/101A" developers but works the same.
**There are 2 [[DUV Flood Expose|DUV Flood exposure]] + 101B develop steps because the first exposure doesn't expose the entire PMGI - because PMGI absorbs DUV very strongly so the light doesn't penetrate to the bottom of thick PMGI on the first exposure.
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''

==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

*Under Development.

==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''

==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

===Available Variations===

*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

===Recipes Table (S-Cubed Flexi)===
{| class="wikitable"
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''Coating Material'''''
|'''''Route/Chain'''''
|'''''Name''': (User: "UCSB Users")''
|'''''Spin Speed (krpm)'''''
|'''''Bake Temp'''''
|'''''Notes'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''''Bottom Anti-Reflection Coating (BARC), DSK101 only:'''''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''1.5krpm recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''5krpm recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''''Imaging resist (UV6) only:'''''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''UV6 Coat with Developable BARC underlayer:'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''''UV6 Coat with Dry-Etchable BARC underlayer:'''''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''

*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}

==Low-K Spin-On Dielectric Recipes==

*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}

==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''

Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.
{|
|- valign="top"
| width="400" |
;<div id="PositivePR"><big>Positive Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*THMR-3600HP (Thin I-Line & Holography)
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}

'''''DUV-248nm'''''

*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}

;<div id="NegativePR"><big>Negative Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}

'''''DUV-248nm'''''

*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}

;<div id="Underlayers"><big>Underlayers</big></div>

*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}

;<div id="EBLPR"><big>E-beam resists</big></div>

*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}

;<div id="NanoImprinting"><big>Nanoimprinting</big></div>

*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}

|
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div>

*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}

;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>

*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}

;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>

*HMDS
*AP3000 BCB Adhesion Promoter
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}

;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>

''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''

*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}

;<div id="Developers"><big>Developers</big></div>

*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}
*DS2100 BCB Developer
*SU-8 Developer
*101A Developer (for DUV Flood Exposed PMGI)

;<div id="PRRemovers"><big>Photoresist Removers</big></div>

*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}
*AZ EBR ("Edge Bead Remover", PGMEA)

|}

[[Category: Processing]]
[[category: Lithography]]
[[category: Recipes]]

Lithography Recipes

2026-07-28T23:42:46Z

Biljana: /* Process Ranking Table */

__NOTOC__
{| class="wikitable"
|+
!Table of Contents
|-
|
==='''<big>Photolithography Processes</big>'''===

#'''UV Optical Lithography'''
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
#**[[Contact Alignment Recipes|Contact Aligner Recipes]]
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
#**[[Stepper Recipes|Stepper Recipes]]
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
#**[[Direct-Write Lithography Recipes|Direct-Write Recipes]]
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150 (I-Line)]]
#***[[Direct-Write Lithography Recipes#E-Beam Lithography Recipes (Raith EBPG 5150+)|Raith EBPG 5150+ (Electron-Beam)]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB (Ion Beam)]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#*[[Photolithography - Improving Adhesion Photoresist Adhesion|HMDS Process for Improving Adhesion]]
#*[[Photolithography - Manual Edge-Bead Removal Techniques|Edge-Bead Removal Techniques]]
#*[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf Photoresist reflow (MicroChem)]
#*[[Lithography Calibration - Analyzing a Focus-Exposure Matrix]]
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===

#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''
*''For small samples (<1cm) some techniques here to reduce edge-bead via shims.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''

==Photolithography Recipes==

*'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''
*'''A''': ''Material is available for use, but no recipes are provided.''

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been ran at least once
|-
|R2
| colspan="11" |Process has been ran and procedure is documented
|-
|R3
| colspan="11" |Process has been ran, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''no''' in-Situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' in-Situ control available
|-
|R6
| colspan="11" |Process has a documented procedure and control charts/limits available. Controlled process.
|}
''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|-
! colspan="8" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>

|-
| bgcolor="#EAECF0" |
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! colspan="2" align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}

|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
|A
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
|A
|A
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
|
|
|A
|A
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}
|
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]
|
|
|
|
|A
|
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R3}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]
| bgcolor="#D0E7FF" |A
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)|R1}}
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]
|A
|A
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}
|A
|
|A
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]
|A
|A
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
|A
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
|A
|A
|A
|A
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R3}}
|
|A
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|-
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
|}


==Lift-Off Recipes==

*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple [[DUV Flood Expose|DUV Flood exposure]]/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
**Updates to the process:
***You now only need to do 5min [[DUV Flood Expose|DUV Flood exposure]] each cycle (lamp optics were replaced)
***Use the new "101B" developer, which replaced the "SAL/101A" developers but works the same.
**There are 2 [[DUV Flood Expose|DUV Flood exposure]] + 101B develop steps because the first exposure doesn't expose the entire PMGI - because PMGI absorbs DUV very strongly so the light doesn't penetrate to the bottom of thick PMGI on the first exposure.
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''

==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

*Under Development.

==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''

==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

===Available Variations===

*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

===Recipes Table (S-Cubed Flexi)===
{| class="wikitable"
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''Coating Material'''''
|'''''Route/Chain'''''
|'''''Name''': (User: "UCSB Users")''
|'''''Spin Speed (krpm)'''''
|'''''Bake Temp'''''
|'''''Notes'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''''Bottom Anti-Reflection Coating (BARC), DSK101 only:'''''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''1.5krpm recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''5krpm recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''''Imaging resist (UV6) only:'''''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''UV6 Coat with Developable BARC underlayer:'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''''UV6 Coat with Dry-Etchable BARC underlayer:'''''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''

*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}

==Low-K Spin-On Dielectric Recipes==

*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}

==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''

Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.
{|
|- valign="top"
| width="400" |
;<div id="PositivePR"><big>Positive Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*THMR-3600HP (Thin I-Line & Holography)
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}

'''''DUV-248nm'''''

*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}

;<div id="NegativePR"><big>Negative Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}

'''''DUV-248nm'''''

*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}

;<div id="Underlayers"><big>Underlayers</big></div>

*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}

;<div id="EBLPR"><big>E-beam resists</big></div>

*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}

;<div id="NanoImprinting"><big>Nanoimprinting</big></div>

*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}

|
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div>

*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}

;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>

*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}

;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>

*HMDS
*AP3000 BCB Adhesion Promoter
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}

;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>

''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''

*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}

;<div id="Developers"><big>Developers</big></div>

*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}
*DS2100 BCB Developer
*SU-8 Developer
*101A Developer (for DUV Flood Exposed PMGI)

;<div id="PRRemovers"><big>Photoresist Removers</big></div>

*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}
*AZ EBR ("Edge Bead Remover", PGMEA)

|}

[[Category: Processing]]
[[category: Lithography]]
[[category: Recipes]]

Lithography Recipes

2026-07-28T23:30:05Z

Biljana: /* Process Ranking Table */

__NOTOC__
{| class="wikitable"
|+
!Table of Contents
|-
|
==='''<big>Photolithography Processes</big>'''===

#'''UV Optical Lithography'''
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
#**[[Contact Alignment Recipes|Contact Aligner Recipes]]
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
#**[[Stepper Recipes|Stepper Recipes]]
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
#**[[Direct-Write Lithography Recipes|Direct-Write Recipes]]
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150 (I-Line)]]
#***[[Direct-Write Lithography Recipes#E-Beam Lithography Recipes (Raith EBPG 5150+)|Raith EBPG 5150+ (Electron-Beam)]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB (Ion Beam)]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#*[[Photolithography - Improving Adhesion Photoresist Adhesion|HMDS Process for Improving Adhesion]]
#*[[Photolithography - Manual Edge-Bead Removal Techniques|Edge-Bead Removal Techniques]]
#*[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf Photoresist reflow (MicroChem)]
#*[[Lithography Calibration - Analyzing a Focus-Exposure Matrix]]
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===

#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''
*''For small samples (<1cm) some techniques here to reduce edge-bead via shims.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''

==Photolithography Recipes==

*'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''
*'''A''': ''Material is available for use, but no recipes are provided.''

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been ran at least once
|-
|R2
| colspan="11" |Process has been ran and procedure is documented
|-
|R3
| colspan="11" |Process has been ran, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''no''' in-Situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' in-Situ control available
|-
|R6
| colspan="11" |Process has a documented procedure and control charts/limits available. Controlled process.
|}
''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|-
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div>

|-
| bgcolor="#EAECF0" |
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|{{rl|Raith PicoMaster Recipes|Positive Resist (Raith PicoMaster XF}}

|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]
|A
|A
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]
|A
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]
|A
|A
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]
|
|
|A
|A
|
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}
|
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]
|
|
|
|
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]
|
|
|
|
|A
|
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R3}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R3}}
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R3}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]
| bgcolor="#D0E7FF" |A
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)|R1}}
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]
|A
|A
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}
|A
|
|A
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]
|A
|A
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]
|
|
|
|
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]
|A
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]
|A
|A
|A
|A
|
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}
|-
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R3}}
|
|A
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|-
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
|}


==Lift-Off Recipes==

*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple [[DUV Flood Expose|DUV Flood exposure]]/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
**Updates to the process:
***You now only need to do 5min [[DUV Flood Expose|DUV Flood exposure]] each cycle (lamp optics were replaced)
***Use the new "101B" developer, which replaced the "SAL/101A" developers but works the same.
**There are 2 [[DUV Flood Expose|DUV Flood exposure]] + 101B develop steps because the first exposure doesn't expose the entire PMGI - because PMGI absorbs DUV very strongly so the light doesn't penetrate to the bottom of thick PMGI on the first exposure.
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''

==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

*Under Development.

==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''

==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

===Available Variations===

*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

===Recipes Table (S-Cubed Flexi)===
{| class="wikitable"
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''Coating Material'''''
|'''''Route/Chain'''''
|'''''Name''': (User: "UCSB Users")''
|'''''Spin Speed (krpm)'''''
|'''''Bake Temp'''''
|'''''Notes'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''''Bottom Anti-Reflection Coating (BARC), DSK101 only:'''''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''1.5krpm recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''5krpm recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''''Imaging resist (UV6) only:'''''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''UV6 Coat with Developable BARC underlayer:'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''''UV6 Coat with Dry-Etchable BARC underlayer:'''''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''1.5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''5krpm DSK recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''

*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}

==Low-K Spin-On Dielectric Recipes==

*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}

==Chemicals Stocked + Datasheets==
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''

Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.
{|
|- valign="top"
| width="400" |
;<div id="PositivePR"><big>Positive Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*THMR-3600HP (Thin I-Line & Holography)
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}

'''''DUV-248nm'''''

*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}

;<div id="NegativePR"><big>Negative Photoresists</big></div>

'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}

'''''DUV-248nm'''''

*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}

;<div id="Underlayers"><big>Underlayers</big></div>

*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}

;<div id="EBLPR"><big>E-beam resists</big></div>

*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}

;<div id="NanoImprinting"><big>Nanoimprinting</big></div>

*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}

|
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div>

*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}

;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div>

*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}

;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div>

*HMDS
*AP3000 BCB Adhesion Promoter
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}

;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div>

''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''

*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}

;<div id="Developers"><big>Developers</big></div>

*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}
*DS2100 BCB Developer
*SU-8 Developer
*101A Developer (for DUV Flood Exposed PMGI)

;<div id="PRRemovers"><big>Photoresist Removers</big></div>

*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}
*AZ EBR ("Edge Bead Remover", PGMEA)

|}

[[Category: Processing]]
[[category: Lithography]]
[[category: Recipes]]

Packaging Recipes

2026-06-10T21:23:13Z

Biljana: /* Partial Dicing */

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Recipe example for Dual Dicing and Kerf for Ga2O3

<gallery>
File:Dicing Thick Ga2O3.jpg|Recipe example for Dicing Ga2O3
File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga2O3
</gallery>

=== Partial Dicing ===
For partial dicing, you need to do single-pass, dicing into substrate desired depth. Setting up the recipe:

1. Setup: Enter wafer thickness (example:750um), and tape (90um)

2. Cut: (if partial cut is only 100um- looking from top of the substrate)

* Index "0" - Set this to desired index (distance between two cuts, for example: 0.105mm), index "1" - set this to "0"
* Cut: Depth - Head1 "1"- Set Depth as following [(wafer thickness + tape thickness)- partial cut depth]=(750+90)-100=740um

3. Height: Check height after every 5 cuts

4. Example of partial cut:

a) Very thick Si (750um), used single pass, blade 2.187-2C-9RU-3, cutting speed=0.5mm/sec, spindle speed=30KRPM

5. Recipe example for Partial dicing into Si substrate
[[File:Partial dicing.jpeg|left|thumb|150x150px]]

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Packaging Recipes

2026-06-10T21:22:39Z

Biljana: /* Partial Dicing */

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Recipe example for Dual Dicing and Kerf for Ga2O3

<gallery>
File:Dicing Thick Ga2O3.jpg|Recipe example for Dicing Ga2O3
File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga2O3
</gallery>

=== Partial Dicing ===
For partial dicing, you need to do single-pass, dicing into substrate desired depth. Setting up the recipe:

1. Setup: Enter wafer thickness (example:750um), and tape (90um)

2. Cut: (if partial cut is only 100um- looking from top of the substrate)

* Index "0" - Set this to desired index (distance between two cuts, for example: 0.105mm), index "1" - set this to "0"
* Cut: Depth - Head1 "1"- Set Depth as following [(wafer thickness + tape thickness)- partial cut depth]=(750+90)-100=740um

3. Height: Check height after every 5 cuts

4. Example of partial cut:

a) Very thick Si (750um), used single pass, blade 2.187-2C-9RU-3, cutting speed=0.5mm/sec, spindle speed=30KRPM

5. Recipe example for Partial dicing Si substrate
[[File:Partial dicing.jpeg|left|thumb|150x150px]]

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

File:Partial dicing.jpeg

2026-06-10T21:20:58Z

Biljana: