https://wiki.nanofab.ucsb.edu/w/api.php?action=feedcontributions&feedformat=atom&user=Biljana
UCSB Nanofab Wiki - User contributions [en]
2026-04-15T04:57:47Z
User contributions
MediaWiki 1.43.6
https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD_Recipes&diff=163564
PECVD Recipes
2025-12-10T18:07:38Z
<p>Biljana: /* Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean" */ cleaning procedure after a-Si dep</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
<br />
=[[PECVD 1 (PlasmaTherm 790)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==SiN deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier<br />
<br />
:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si<sub>3</sub>N<sub>4</sub> modified stress via. varying N<sub>2</sub> flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]<br />
<br />
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]<br />
<br />
==Standard Cleaning Procedure (PECVD #1)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. <br />
<br />
The clean is done in two steps:<br />
<br />
#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )<br />
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.<br />
<br />
{| class="wikitable"<br />
|+Table of Cleaning Times<br />
!Film Dep'd<br />
!Cleaning Time<br />
|-<br />
|SiO<sub>2</sub><br />
|1 min clean for every 1 min dep<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1 min clean for every 7 min dep<br />
|-<br />
|SiOxNy<br />
|Same as SiO<sub>2</sub><br />
|-<br />
|a-Si<br />
|Same time as Si<sub>3</sub>N<sub>4</sub><br />
|}<br />
<br />
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
=[[PECVD 2 (Advanced Vacuum)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"<br />
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
*SiO<sub>2</sub> deposition rate at 150C is 35nm/min<br />
<br />
==SiN deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"<br />
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
==Low-Stress SiN deposition (PECVD #2)==<br />
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)''<br />
<br />
*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"<br />
<br />
**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]<br />
*:''Old Versions of the recipe:''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''<br />
<br />
===Low-Stress SiN 3xTime (PECVD #2)===<br />
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''<br />
<br />
*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date<br />
<br />
==Amorphous-Si deposition (PECVD #2)==<br />
<br />
*[[PECVD-2 - a-Si Recipe and Dep process (2025)|a-Si Recipe and Dep process]] 2025-11 <br />
**''Developed by Ryan Hersey & Skyler Palatnik, Group of Prof. Max Millar-Blanchaer''<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] (2013-09, Ning Cao)<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film - Characterization and Stress] - DOE/recipe variations<br />
<br />
==Standard Cleaning Procedure (PECVD #2)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:<br />
<br />
#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!<br />
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.<br />
<br />
===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
<br />
'''Clean Times (PECVD#2''')<br />
{| class="wikitable"<br />
!Film Deposited<br />
!Cleaning Time (Dry)<br />
|-<br />
|SiO<sub>2</sub><br />
|1min. clean for every 1min. deposition<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1min. clean for every 7min. of deposition<br />
|-<br />
|a-Si <br />
|2 min clean for every 1min of deposition<br />
|-<br />
|a-Si (max 60min dep before breaking it up and cleaning the chamber)<br />
|Wet Clean the Upper Lid/Chamber <br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
|-<br />
|Other films:(max 60min long dep. in one single run)<br />
|If > 29min total dep time<br />
(Season + Dep)<br />
<br />
Wet Clean the Upper Lid/Chamber<br />
<br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
|}<br />
<br />
=[[ICP-PECVD (Unaxis VLR)]]=<br />
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.<br />
<br />
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.<br />
<br />
==Process Control Data (Unaxis ICP-PECVD)==<br />
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub>]<br />
<br />
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''<br />
<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
<br />
* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"<br />
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>]<br />
<br />
==Gap-Fill SiO<sub>2</sub> [ICP-PECVD]==<br />
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''<br />
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.<br />
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.<br />
<br />
The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.<br />
<br />
*Category = <code>SiO2 GapFill - Std.</code><br />
*FLOW: <code>SiO2 GapFill 250C</code><br />
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!<br />
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code><br />
*Deposition rate = 99.968nm/min [9/20/23]<br />
<br />
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"<br />
<br />
* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
** Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
==Standard Seasoning Procedure [ICP-PECVD]==<br />
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film]. <br />
Seasoning recipes:<br />
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO<sub>2</sub> seasoning - Std ]<br />
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]<br />
<br />
==Standard Cleaning Procedure [ICP-PECVD]==<br />
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.<br />
<br />
*SiNx etches at 20nm/min<br />
*SiO<sub>2</sub> etches at 40nm/min<br />
<br />
===Standard Clean Recipe===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]<br />
<br />
==General Recipe Notes (Unaxis VLR ICP-PECVD)==<br />
<br />
*RF1 = Bias<br />
*RF2 = ICP Power<br />
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.<br />
*Maximum SiO<sub>2</sub> Dep. thickness allowed: 800nm<br />
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD_Recipes&diff=163349
PECVD Recipes
2025-11-13T22:20:00Z
<p>Biljana: /* Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean" */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
<br />
=[[PECVD 1 (PlasmaTherm 790)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==SiN deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier<br />
<br />
:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si<sub>3</sub>N<sub>4</sub> modified stress via. varying N<sub>2</sub> flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]<br />
<br />
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]<br />
<br />
==Standard Cleaning Procedure (PECVD #1)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. <br />
<br />
The clean is done in two steps:<br />
<br />
#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )<br />
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.<br />
<br />
{| class="wikitable"<br />
|+Table of Cleaning Times<br />
!Film Dep'd<br />
!Cleaning Time<br />
|-<br />
|SiO<sub>2</sub><br />
|1 min clean for every 1 min dep<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1 min clean for every 7 min dep<br />
|-<br />
|SiOxNy<br />
|Same as SiO<sub>2</sub><br />
|-<br />
|a-Si<br />
|Same time as Si<sub>3</sub>N<sub>4</sub><br />
|}<br />
<br />
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
=[[PECVD 2 (Advanced Vacuum)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"<br />
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
*SiO<sub>2</sub> deposition rate at 150C is 35nm/min<br />
<br />
==SiN deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"<br />
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
==Low-Stress SiN deposition (PECVD #2)==<br />
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)''<br />
<br />
*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"<br />
<br />
**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]<br />
*:''Old Versions of the recipe:''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''<br />
<br />
===Low-Stress SiN 3xTime (PECVD #2)===<br />
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''<br />
<br />
*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date<br />
<br />
==Amorphous-Si deposition (PECVD #2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]<br />
<br />
==Standard Cleaning Procedure (PECVD #2)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:<br />
<br />
#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!<br />
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.<br />
<br />
===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
<br />
'''Clean Times (PECVD#2''')<br />
{| class="wikitable"<br />
!Film Deposited<br />
!Cleaning Time (Dry)<br />
|-<br />
|SiO<sub>2</sub><br />
|1min. clean for every 1min. deposition<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1min. clean for every 7min. of deposition<br />
|-<br />
|a-Si <br />
|1.5 min clean for every 1min of deposition<br />
|-<br />
|a-Si (max 30min long dep. in one single run)<br />
|Wet Clean the Upper Lid/Chamber <br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
|-<br />
|Other films:(max 60min long dep. in one single run)<br />
|If > 29min total dep time<br />
(Season + Dep)<br />
<br />
Wet Clean the Upper Lid/Chamber<br />
<br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
|}<br />
<br />
=[[ICP-PECVD (Unaxis VLR)]]=<br />
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.<br />
<br />
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.<br />
<br />
==Process Control Data (Unaxis ICP-PECVD)==<br />
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub>]<br />
<br />
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''<br />
<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
<br />
* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"<br />
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>]<br />
<br />
==Gap-Fill SiO<sub>2</sub> [ICP-PECVD]==<br />
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''<br />
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.<br />
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.<br />
<br />
The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.<br />
<br />
*Category = <code>SiO2 GapFill - Std.</code><br />
*FLOW: <code>SiO2 GapFill 250C</code><br />
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!<br />
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code><br />
*Deposition rate = 99.968nm/min [9/20/23]<br />
<br />
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"<br />
<br />
* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
** Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
==Standard Seasoning Procedure [ICP-PECVD]==<br />
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film]. <br />
Seasoning recipes:<br />
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO<sub>2</sub> seasoning - Std ]<br />
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]<br />
<br />
==Standard Cleaning Procedure [ICP-PECVD]==<br />
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.<br />
<br />
*SiNx etches at 20nm/min<br />
*SiO<sub>2</sub> etches at 40nm/min<br />
<br />
===Standard Clean Recipe===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]<br />
<br />
==General Recipe Notes (Unaxis VLR ICP-PECVD)==<br />
<br />
*RF1 = Bias<br />
*RF2 = ICP Power<br />
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.<br />
*Maximum SiO<sub>2</sub> Dep. thickness allowed: 800nm<br />
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD_Recipes&diff=163346
PECVD Recipes
2025-11-10T23:37:19Z
<p>Biljana: Cleaning time after A-Si deposition (1min clean for 1min dep)</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
<br />
=[[PECVD 1 (PlasmaTherm 790)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==SiN deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier<br />
<br />
:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si<sub>3</sub>N<sub>4</sub> modified stress via. varying N<sub>2</sub> flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]<br />
<br />
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]<br />
<br />
==Standard Cleaning Procedure (PECVD #1)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. <br />
<br />
The clean is done in two steps:<br />
<br />
#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )<br />
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.<br />
<br />
{| class="wikitable"<br />
|+Table of Cleaning Times<br />
!Film Dep'd<br />
!Cleaning Time<br />
|-<br />
|SiO<sub>2</sub><br />
|1 min clean for every 1 min dep<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1 min clean for every 7 min dep<br />
|-<br />
|SiOxNy<br />
|Same as SiO<sub>2</sub><br />
|-<br />
|a-Si<br />
|Same time as Si<sub>3</sub>N<sub>4</sub><br />
|}<br />
<br />
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
=[[PECVD 2 (Advanced Vacuum)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"<br />
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
*SiO<sub>2</sub> deposition rate at 150C is 35nm/min<br />
<br />
==SiN deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"<br />
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
==Low-Stress SiN deposition (PECVD #2)==<br />
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)''<br />
<br />
*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"<br />
<br />
**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]<br />
*:''Old Versions of the recipe:''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''<br />
<br />
===Low-Stress SiN 3xTime (PECVD #2)===<br />
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''<br />
<br />
*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date<br />
<br />
==Amorphous-Si deposition (PECVD #2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]<br />
<br />
==Standard Cleaning Procedure (PECVD #2)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:<br />
<br />
#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!<br />
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.<br />
<br />
===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
<br />
'''Clean Times (PECVD#2''')<br />
{| class="wikitable"<br />
!Film Deposited<br />
!Cleaning Time (Dry)<br />
|-<br />
|SiO<sub>2</sub><br />
|1min. clean for every 1min. deposition<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1min. clean for every 7min. of deposition<br />
|-<br />
|a-Si <br />
|1min clean for every 1min of deposition<br />
|-<br />
|a-Si (max 1hr long dep. in one single run)<br />
|Wet Clean the Upper Lid/Chamber <br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
|-<br />
|Other films:<br />
If > 29min total dep time<br />
(Season + Dep)<br />
|Wet Clean the Upper Lid/Chamber<br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
|}<br />
<br />
=[[ICP-PECVD (Unaxis VLR)]]=<br />
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.<br />
<br />
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.<br />
<br />
==Process Control Data (Unaxis ICP-PECVD)==<br />
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub>]<br />
<br />
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''<br />
<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
<br />
* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"<br />
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>]<br />
<br />
==Gap-Fill SiO<sub>2</sub> [ICP-PECVD]==<br />
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''<br />
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.<br />
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.<br />
<br />
The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.<br />
<br />
*Category = <code>SiO2 GapFill - Std.</code><br />
*FLOW: <code>SiO2 GapFill 250C</code><br />
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!<br />
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code><br />
*Deposition rate = 99.968nm/min [9/20/23]<br />
<br />
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"<br />
<br />
* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
** Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
==Standard Seasoning Procedure [ICP-PECVD]==<br />
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film]. <br />
Seasoning recipes:<br />
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO<sub>2</sub> seasoning - Std ]<br />
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]<br />
<br />
==Standard Cleaning Procedure [ICP-PECVD]==<br />
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.<br />
<br />
*SiNx etches at 20nm/min<br />
*SiO<sub>2</sub> etches at 40nm/min<br />
<br />
===Standard Clean Recipe===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]<br />
<br />
==General Recipe Notes (Unaxis VLR ICP-PECVD)==<br />
<br />
*RF1 = Bias<br />
*RF2 = ICP Power<br />
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.<br />
*Maximum SiO<sub>2</sub> Dep. thickness allowed: 800nm<br />
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD_Recipes&diff=163345
PECVD Recipes
2025-11-07T22:39:02Z
<p>Biljana: /* Standard Cleaning Procedure (PECVD #2) */ added info regarding cleaning time for a-Si. Subject to change, since I used cleaning time user suggested ( 1.5 min clean for 1 min deposition time). Added info about max. dep. time for a-Si (1 hr- from Tony's e-mail).</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
<br />
=[[PECVD 1 (PlasmaTherm 790)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==SiN deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier<br />
<br />
:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si<sub>3</sub>N<sub>4</sub> modified stress via. varying N<sub>2</sub> flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]<br />
<br />
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]<br />
<br />
==Standard Cleaning Procedure (PECVD #1)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. <br />
<br />
The clean is done in two steps:<br />
<br />
#'''Wet cleaning''' (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )<br />
#Load the recipe for plasma cleaning "'''''CF4/O2 Clean'''''" (run the recipe and it will pop-up asking for the cleaning time). Follow instructions regarding a required time for cleaning.<br />
<br />
{| class="wikitable"<br />
|+Table of Cleaning Times<br />
!Film Dep'd<br />
!Cleaning Time<br />
|-<br />
|SiO<sub>2</sub><br />
|1 min clean for every 1 min dep<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1 min clean for every 7 min dep<br />
|-<br />
|SiOxNy<br />
|Same as SiO<sub>2</sub><br />
|-<br />
|a-Si<br />
|Same time as Si<sub>3</sub>N<sub>4</sub><br />
|}<br />
<br />
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
=[[PECVD 2 (Advanced Vacuum)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"<br />
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
*SiO<sub>2</sub> deposition rate at 150C is 35nm/min<br />
<br />
==SiN deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"<br />
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
==Low-Stress SiN deposition (PECVD #2)==<br />
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)''<br />
<br />
*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"<br />
<br />
**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]<br />
*:''Old Versions of the recipe:''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''<br />
<br />
===Low-Stress SiN 3xTime (PECVD #2)===<br />
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''<br />
<br />
*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date<br />
<br />
==Amorphous-Si deposition (PECVD #2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]<br />
<br />
==Standard Cleaning Procedure (PECVD #2)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:<br />
<br />
#If > 29min (season+dep. time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. Do not clean shower-head!<br />
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.<br />
<br />
===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
<br />
'''Clean Times (PECVD#2''')<br />
{| class="wikitable"<br />
!Film Deposited<br />
!Cleaning Time (Dry)<br />
|-<br />
|SiO<sub>2</sub><br />
|1 min. clean for every 1 min. deposition<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1 min. clean for every 7 min of deposition<br />
|-<br />
|a-Si <br />
|1.5 min. clean for every 1 min of deposition<br />
|-<br />
|a-Si (max 1hr long dep. in one single run)<br />
|Wet Clean the Upper Lid/Chamber <br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
<br />
[Do wet clean for any a-Si deposition regardless of total deposition time!]<br />
|-<br />
|Other films:<br />
If > 29min total dep time<br />
(Season + Dep)<br />
|Wet Clean the Upper Lid/Chamber<br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
|}<br />
<br />
=[[ICP-PECVD (Unaxis VLR)]]=<br />
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.<br />
<br />
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.<br />
<br />
==Process Control Data (Unaxis ICP-PECVD)==<br />
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub>]<br />
<br />
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''<br />
<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
<br />
* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"<br />
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>]<br />
<br />
==Gap-Fill SiO<sub>2</sub> [ICP-PECVD]==<br />
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''<br />
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.<br />
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.<br />
<br />
The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.<br />
<br />
*Category = <code>SiO2 GapFill - Std.</code><br />
*FLOW: <code>SiO2 GapFill 250C</code><br />
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!<br />
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code><br />
*Deposition rate = 99.968nm/min [9/20/23]<br />
<br />
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"<br />
<br />
* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
** Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
==Standard Seasoning Procedure [ICP-PECVD]==<br />
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film]. <br />
Seasoning recipes:<br />
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO<sub>2</sub> seasoning - Std ]<br />
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]<br />
<br />
==Standard Cleaning Procedure [ICP-PECVD]==<br />
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.<br />
<br />
*SiNx etches at 20nm/min<br />
*SiO<sub>2</sub> etches at 40nm/min<br />
<br />
===Standard Clean Recipe===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]<br />
<br />
==General Recipe Notes (Unaxis VLR ICP-PECVD)==<br />
<br />
*RF1 = Bias<br />
*RF2 = ICP Power<br />
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.<br />
*Maximum SiO<sub>2</sub> Dep. thickness allowed: 800nm<br />
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD_Recipes&diff=163331
PECVD Recipes
2025-10-06T20:38:03Z
<p>Biljana: /* ICP-PECVD (Unaxis VLR) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
<br />
=[[PECVD 1 (PlasmaTherm 790)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==SiN deposition (PECVD #1)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier<br />
<br />
:[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si<sub>3</sub>N<sub>4</sub> modified stress via. varying N<sub>2</sub> flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]]<br />
<br />
==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe]<br />
*[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Lists film data, such as dep rate, stress, particle count, refractive index etc.''<br />
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014]<br />
<br />
==Standard Cleaning Procedure (PECVD #1)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:<br />
<br />
#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )<br />
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.<br />
#<br />
<br />
{| class="wikitable"<br />
|+Table of Cleaning Times<br />
!Film Dep'd<br />
!Cleaning Time<br />
|-<br />
|SiO<sub>2</sub><br />
|TBD<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|TBD<br />
|-<br />
|SiOxNy<br />
|Same as XYZ<br />
|}<br />
<br />
#<br />
<br />
===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
=[[PECVD 2 (Advanced Vacuum)]]=<br />
<br />
===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data===<br />
<br />
==SiO<sub>2</sub> deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1cYK-k669vf8YO2q2YCGa3gTdaDI3I3M-a9KR5RDlZWY/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD SiO2 v2''"<br />
**[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''STD SiO2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
*SiO<sub>2</sub> deposition rate at 150C is 35nm/min<br />
<br />
==SiN deposition (PECVD #2)==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1JBXEfRGemFJK81RkHfxS0cTucb3viUL7hMGzmKRD5uU/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD Si3N4 v3''"<br />
**[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "''Nitride2''"<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
==Low-Stress SiN deposition (PECVD #2)==<br />
''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)''<br />
<br />
*[https://docs.google.com/spreadsheets/d/19VQ6ytYbZ5SsAiXzgWqwlyJUqgjWb8x_eyv7L8DvtwM/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] New Standard Recipe</nowiki>] - "''STD LS-Si3N4 v4''"<br />
<br />
**[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Old Standard Recipe</nowiki>] - "'' Old LSNitride2 recipe ''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]]<br />
*:''Old Versions of the recipe:''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]''<br />
*:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]''<br />
<br />
===Low-Stress SiN 3xTime (PECVD #2)===<br />
''This Low-Stress SiN recipe is more stable over time (months), because each step is 3x longer (so each compressive/tensile layer is thicker), making it less susceptible to RF ignition delays as the grounding strap is etched over time. – 2024-09 [[Demis D. John|Demis]] & [[Biljana Stamenic|Biljana]]''<br />
<br />
*Recipe: "''[https://docs.google.com/spreadsheets/d/1OQp_sux5YEgpcyH3sf0JCwTOhvoi_LSYKOUMRR4Umh4?usp=drive_fs STD LS-Si3N4 3xTime v1]"''<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?usp=sharing Process Control Data]: Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
*[https://docs.google.com/spreadsheets/d/15aKkk-fIojIDgQfsVlB3lhex-U3Q0edVdNCkzoGBo1Q/edit?gid=974005628#gid=974005628 Process Control Charts/Plots]: Calibration control limits versus date<br />
<br />
==Amorphous-Si deposition (PECVD #2)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress]<br />
<br />
==Standard Cleaning Procedure (PECVD #2)==<br />
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:<br />
<br />
#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.<br />
#Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.<br />
<br />
===[https://wiki.nanofab.ucsb.edu/wiki/File:STD_CF4-O2_Clean_PECVD2.jpg Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]===<br />
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.<br />
<br />
<br />
'''Clean Times (PECVD#2''')<br />
{| class="wikitable"<br />
!Film Deposited<br />
!Cleaning Time (Dry)<br />
|-<br />
|SiO<sub>2</sub><br />
|1 min. clean for every 1 min. deposition<br />
|-<br />
|Si<sub>3</sub>N<sub>4</sub><br />
|1 min. clean for every 7 min of deposition<br />
|-<br />
|If > 29min total dep time<br />
(Season + Dep)<br />
|Wet Clean the Upper Lid/Chamber<br />
DI water then Isopropyl Alcohol on chamber wall & portholes<br />
|}<br />
<br />
=[[ICP-PECVD (Unaxis VLR)]]=<br />
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.<br />
<br />
The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.<br />
<br />
==Process Control Data (Unaxis ICP-PECVD)==<br />
''Regularly-run depositions and measurements of film properties over time - executed by [https://nanofab.ucsb.edu/workforce NanoFab Interns].''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data''<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub>]<br />
<br />
==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1mobnAIH70a9eFbCkMnza2WfpI2uRUWtLlz0cLK1Ljuo/edit?gid=1554182668#gid=1554182668 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C-new May 2024''<br />
<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
<br />
* [https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C - replaced on May 2024''"<br />
* [https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1x0mB4ySSUfEAfRehAx7k_k3BJuTMczaRxQgxsTAFfo4/edit?gid=744785272#gid=744785272 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C-replace on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>]<br />
<br />
==Gap-Fill SiO<sub>2</sub> [ICP-PECVD]==<br />
''Recipe designed by [https://scholar.google.com/citations?user=kur3-cEAAAAJ&hl=en&oi=ao Warren Jin], please consider our [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy] if you publish using this recipe.''<br />
'''NOTE:''' Please contact tool [[Tony Bosch|supervisor]] before running this recipe - this recipe must often be scheduled to prevent excessive chamber maintenance.<br />
Able to effectively fill ~1:1 and ~1:2 aspect ratio gaps in Silicon and Glass structures (eg. waveguides/optical gratings) with void-free filling.<br />
<br />
The recipe uses a high 400W RF Bias to reduce buildup on corners that causes voids during growth.<br />
<br />
*Category = <code>SiO2 GapFill - Std.</code><br />
*FLOW: <code>SiO2 GapFill 250C</code><br />
**Will run the sequence <code>SiO2 GapFill 250C 450W</code>. Do not change this!<br />
*STEP (edit TIME only): <code>SiO2 GapFill 250C</code><br />
*Deposition rate = 99.968nm/min [9/20/23]<br />
<br />
==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/18nE-iTLLH4QIq3wadHVgjVuZ215o9xUz_aCX2WDdges/edit?gid=638997025#gid=638997025 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C-new May 2024''"<br />
<br />
* [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
** Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
*[https://docs.google.com/spreadsheets/d/1Np5uJ1bw81MxHlDD0qs5Jh_hj7nCSznQTsSEELlT414/edit?usp=sharing Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C- replaced on May 2024''"<br />
<br />
*[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] - 2019<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021<br />
<br />
==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]==<br />
<br />
*[https://docs.google.com/spreadsheets/d/1xchMuXlPABSKcW-rMau8B-cw_jnJnwI9qpXqDLUQ8sU/edit?gid=1239658204#gid=1239658204 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C-new May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>]<br />
**Lists film data, such as dep rate, stress, particle count, refractive index etc.<br />
<br />
=== Old Data ===<br />
* [https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C - replaced on May 2024''"<br />
*[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] - 2019<br />
<br />
==Standard Seasoning Procedure [ICP-PECVD]==<br />
You must edit the seasoning recipes (SiO2 Seasoning - Std, SiN seasoning - Std). You are allowed to change only seasoning time [time needed to coat chamber walls with ~200nm of film]. <br />
Seasoning recipes:<br />
*[https://docs.google.com/spreadsheets/d/1S01xgtxFEJ4q7GLHfo-96yYKxer8nGlB/edit?gid=1944526099#gid=1944526099 SiO<sub>2</sub> seasoning - Std ]<br />
*[https://docs.google.com/spreadsheets/d/1S3BFJIn9oAq2bxg6PDe9RY_6Fvkc36ki/edit?gid=1218243940#gid=1218243940 SiN seasoning - Std ]<br />
<br />
==Standard Cleaning Procedure [ICP-PECVD]==<br />
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.<br />
<br />
*SiNx etches at 20nm/min<br />
*SiO<sub>2</sub> etches at 40nm/min<br />
<br />
===Standard Clean Recipe===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1S3DzvJJahNTwGXsn0GDyg2FiourGffiy/edit?gid=2021404224#gid=2021404224 Post Deposition Clean 250C ]<br />
<br />
==General Recipe Notes (Unaxis VLR ICP-PECVD)==<br />
<br />
*RF1 = Bias<br />
*RF2 = ICP Power<br />
*All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.<br />
*Maximum SiO<sub>2</sub> Dep. thickness allowed: 800nm<br />
**Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:STD_CF4-O2_Clean_PECVD2.jpg&diff=163330
File:STD CF4-O2 Clean PECVD2.jpg
2025-10-06T20:35:40Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=163113
Thermal Evap 2 (Solder)
2025-06-19T21:35:08Z
<p>Biljana: /* Recipes */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/7/74/Thermal_Evap_2_pump_down_procedure-New-_5-29-25.pdf Temp Pump Down SOP as of 5-29-25]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Sn_deposition_in_Thermal_Evaporator2.pdf Tin deposition]<br />
<br />
== Plot ==<br />
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png Plot for Indium Deposition]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=163112
Thermal Evap 2 (Solder)
2025-06-19T21:34:51Z
<p>Biljana: /* Recipes */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/7/74/Thermal_Evap_2_pump_down_procedure-New-_5-29-25.pdf Temp Pump Down SOP as of 5-29-25]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
* Tin deposition <br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Sn_deposition_in_Thermal_Evaporator2.pdf Tin deposition]<br />
<br />
== Plot ==<br />
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png Plot for Indium Deposition]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Sn_deposition_in_Thermal_Evaporator2.pdf&diff=163111
File:Sn deposition in Thermal Evaporator2.pdf
2025-06-19T21:30:36Z
<p>Biljana: Biljana uploaded a new version of File:Sn deposition in Thermal Evaporator2.pdf</p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Sn_deposition_in_Thermal_Evaporator2.pdf&diff=163110
File:Sn deposition in Thermal Evaporator2.pdf
2025-06-19T21:29:04Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evaporation_Recipes&diff=163109
Thermal Evaporation Recipes
2025-06-19T21:27:01Z
<p>Biljana: /* Materials Table */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
<br />
=[[Thermal Evaporator 1]]=<br />
<br />
==Materials Table==<br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"<br />
|-<br />
! colspan=8 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #1</div><br />
|- bgcolor="#D0E7FF" <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Material''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol''' <br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %''' <br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Current, Amp'''<br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Dep.rate, A/sec'''<br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Comments'''<br />
|-<br />
|Aluminum<br />
|Al<br />
|2.70<br />
|8.17<br />
|95<br />
|85<br />
|1<br />
|Used often<br />
|-<br />
|Chromium<br />
|Cr<br />
|7.20<br />
|28.95<br />
|95<br />
|85<br />
|2<br />
|Used often<br />
|-<br />
|Cobalt<br />
|Co<br />
|8.71<br />
|25.74<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Copper<br />
|Cu<br />
|8.93<br />
|20.21<br />
|100<br />
|<br />
|<br />
|Used often<br />
|-<br />
|Gold<br />
|Au<br />
|19.32<br />
|23.18<br />
|101.2<br />
|122<br />
|5<br />
|Used often<br />
|-<br />
|Gold/Palladium<br />
|Au.5/Pd.5<br />
|15.86<br />
|23.96<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Palladium<br />
|Au.5/Pd.4<br />
|16.40<br />
|23.80<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Zinc<br />
|Au.95/Zn.05<br />
|18.72<br />
|22.89<br />
|101.2<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Zinc<br />
|Au.90/Zn.10<br />
|18.07<br />
|22.58<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Magnezium<br />
|Mg<br />
|1.74<br />
|5.48<br />
|98.4<br />
|<br />
|<br />
|<br />
|-<br />
|Manganese<br />
|Mn<br />
|7.20<br />
|23.40<br />
|120<br />
|100<br />
|<br />
|<br />
|-<br />
|Nickel<br />
|Ni<br />
|8.90<br />
|26.68<br />
|100<br />
|50<br />
|4.5<br />
|Used often<br />
|-<br />
|Nichrome<br />
|NiCr<br />
|8.32<br />
|27.59<br />
|<br />
|100<br />
|0.4<br />
|<br />
|-<br />
|Palladium<br />
|Pd<br />
|12.40<br />
|24.73<br />
|140.5<br />
|62<br />
|1.5<br />
|Used often<br />
|-<br />
|Silicon Monoxide<br />
|SiO<br />
|2.13<br />
|10.19<br />
|120<br />
|70<br />
|<br />
|<br />
|-<br />
|Silver<br />
|Ag<br />
|10.5<br />
|16.69<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Zinc<br />
|Zn<br />
|7.14<br />
|17.18<br />
|<br />
|50<br />
|4.5<br />
|Used often<br />
|-<br />
|Zinc Oxide<br />
|ZnO<br />
|5.61<br />
|15.88<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Strontium Fluoride<br />
|SrF<sub>2 <br />
|4.28<br />
|12.15<br />
|200<br />
|<br />
|<br />
|<br />
|-<br />
|Iron<br />
|Fe<br />
|7.86<br />
|25.30<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|ITO(IndiumTinOxide)<br />
|In<sub>2</sub>O<sub>3</sub> - SnO<sub>2<br />
|6.43-7.14<br />
|0.841<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Permalloy<br />
|Ni<sub>0.1</sub>Fe<sub>0.2</sub><br />
|8.7<br />
|26.40<br />
|<br />
|140<br />
|0.1<br />
|<br />
|}<br />
<br />
=[[Thermal Evaporator 2]]=<br />
<br />
== Materials Table ==<br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"<br />
|-<br />
! colspan=6 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #2</div><br />
|- bgcolor="#D0E7FF" <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Material''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %''' <br />
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''<br />
|-<br />
|Aluminum<br />
|Al<br />
|2.70<br />
|1.08<br />
|<br />
|<br />
|-<br />
|Antimony<br />
|Sb<br />
|6.620<br />
|0.768<br />
|<br />
|<br />
|-<br />
|Arsenic<br />
|As<br />
|5.73<br />
|0.996<br />
|<br />
|<br />
|-<br />
|Beryllium<br />
|Be<br />
|1.85<br />
|0.543<br />
|<br />
|<br />
|-<br />
|Boron<br />
|B<br />
|2.54<br />
|0.389<br />
|<br />
|<br />
|-<br />
|Cadmium<br />
|Cd<br />
|8.64<br />
|0.682<br />
|<br />
|<br />
|-<br />
|Cadmium sulfide<br />
|CdS<br />
|4.83<br />
|1.02<br />
|<br />
|<br />
|-<br />
|Cadmium telluride<br />
|CdTe<br />
|5.85<br />
|0.980<br />
|<br />
|<br />
|-<br />
|Calcium fluoride<br />
|CaF<sub>2</sub><br />
|3.18<br />
|0.775<br />
|<br />
|Used often<br />
|-<br />
|Carbon (graphite)<br />
|C<br />
|2.25<br />
|3.26<br />
|<br />
|<br />
|-<br />
|Chromium<br />
|Cr<br />
|7.20<br />
|0.305<br />
|155<br />
|Used often<br />
|-<br />
|Cobalt<br />
|Co<br />
|8.71<br />
|0.343<br />
|<br />
|<br />
|-<br />
|Copper<br />
|Cu<br />
|8.93<br />
|0.437<br />
|<br />
|<br />
|-<br />
|Gallium<br />
|Ga<br />
|5.93<br />
|0.593<br />
|<br />
|<br />
|-<br />
|Gallium Arsenide<br />
|GaAs<br />
|5.31<br />
|1.59<br />
|<br />
|<br />
|-<br />
|Germanium<br />
|Ge<br />
|5.35<br />
|0.516<br />
|<br />
|<br />
|-<br />
|Gold<br />
|Au<br />
|19.30<br />
|0.381<br />
|<br />
|Used often<br />
|-<br />
|Indium<br />
|In<br />
|7.30<br />
|0.841<br />
|120<br />
|Used often, tooling factor needs adjustment<br />
|-<br />
|Indium antimonide<br />
|InSb<br />
|5.76<br />
|0.769<br />
|<br />
|<br />
|-<br />
|Iridium<br />
|Ir<br />
|22.4<br />
|0.129<br />
|<br />
|<br />
|-<br />
|Iron<br />
|Fe<br />
|7.86<br />
|0.349<br />
|<br />
|<br />
|-<br />
|Lead<br />
|Pb<br />
|11.3<br />
|1.13<br />
|<br />
|<br />
|-<br />
|Lead sulfide<br />
|PbS<br />
|7.50<br />
|0.566<br />
|<br />
|<br />
|-<br />
|Lithium fluoride<br />
|LiF<br />
|2.638<br />
|0.778<br />
|<br />
|<br />
|-<br />
|Magnesium<br />
|Mg<br />
|1.74<br />
|1.61<br />
|<br />
|<br />
|-<br />
|Magnesium oxide<br />
|MgO<br />
|3.58<br />
|0.411<br />
|<br />
|<br />
|-<br />
|Magnesium Fluoride<br />
|MgF<sub>2</sub><br />
|3.00 ( should be 3.18)<br />
|0.427( should be 0.637)<br />
|<br />
|<br />
|-<br />
|Manganese<br />
|Mn<br />
|7.20<br />
|0.377<br />
|<br />
|<br />
|-<br />
|Manganese(II) Sulfide<br />
|MnS<br />
|3.99<br />
|0.94<br />
|<br />
|<br />
|-<br />
|Mercury<br />
|Hg<br />
|13.46<br />
|0.74<br />
|<br />
|<br />
|-<br />
|Molybdenum<br />
|Mo<br />
|10.2<br />
|0.257<br />
|<br />
|<br />
|-<br />
|Nickel<br />
|Ni<br />
|8.91<br />
|0.331<br />
|<br />
|Used often<br />
|-<br />
|Niobium<br />
|Nb<br />
|8.578<br />
|0.492<br />
|<br />
|<br />
|-<br />
|Niobium(V) Oxide<br />
|Nb<sub>2</sub>O<sub>5</sub><br />
|4.47<br />
|*1.00<br />
|<br />
|*z ratio has not been established<br />
|-<br />
|Palladium<br />
|Pd<br />
|12.0<br />
|0.357<br />
|<br />
|<br />
|-<br />
|Platinum<br />
|Pt<br />
|21.4<br />
|0.245<br />
|<br />
|<br />
|-<br />
|Potasium Cloride<br />
|KCl<br />
|1.98<br />
|2.05<br />
|<br />
|<br />
|-<br />
|Selenium<br />
|Se<br />
|4.82<br />
|0.864<br />
|<br />
|<br />
|-<br />
|Silicon<br />
|Si<br />
|2.32<br />
|0.712<br />
|<br />
|<br />
|-<br />
|Silicon(II) Oxide<br />
|SiO<br />
|2.13<br />
|0.87<br />
|<br />
|<br />
|-<br />
|Silicon dioxide (fused quarz)<br />
|SiO<sub>2</sub><br />
|2.20<br />
|1.07<br />
|<br />
|<br />
|-<br />
|Silver<br />
|Ag<br />
|10.5<br />
|0.529<br />
|<br />
|<br />
|-<br />
|Silver bromide<br />
|AgBr<br />
|6.47<br />
|1.18<br />
|<br />
|<br />
|-<br />
|Silver chloride<br />
|AgCl<br />
|5.56<br />
|1.32<br />
|<br />
|<br />
|-<br />
|Sodium<br />
|Na<br />
|0.97<br />
|4.8<br />
|<br />
|<br />
|-<br />
|Sodium chloride<br />
|NaCl<br />
|2.17<br />
|1.57<br />
|<br />
|<br />
|-<br />
|Tantalum<br />
|Ta<br />
|16.6<br />
|0.262<br />
|<br />
|<br />
|-<br />
|Tantalum(IV) oxide<br />
|Ta<sub>2</sub>O<sub>5</sub><br />
|8.2<br />
|0.30<br />
|<br />
|<br />
|-<br />
|Tin<br />
|Sn<br />
|7.30<br />
|0.724<br />
|197<br />
|Program #9, Tooling factor=200%, cold fixture <br />
|-<br />
|Titanium<br />
|Ti<br />
|4.50<br />
|0.628<br />
|<br />
|Used often<br />
|-<br />
|Titanium (IV) Oxide<br />
|TiO<sub>2</sub><br />
|4.26<br />
|0.40<br />
|<br />
|<br />
|-<br />
|Titanium Oxide<br />
|TiO<br />
|4.90<br />
|*1.00<br />
|<br />
|* z ratio not established<br />
|-<br />
|Tungsten<br />
|W<br />
|19.3<br />
|0.163<br />
|<br />
|<br />
|-<br />
|Tungsten carbide<br />
|WC<br />
|15.6<br />
|0.151<br />
|<br />
|<br />
|-<br />
|Zinc<br />
|Zn<br />
|7.04<br />
|0.514<br />
|<br />
|Used often<br />
|-<br />
|Zinc Oxide<br />
|ZnO<br />
|5.61<br />
|0.556<br />
|<br />
|<br />
|-<br />
|Zinc Sulfide<br />
|ZnS<br />
|4.09<br />
|0.775<br />
|<br />
|<br />
|-<br />
|Zirconium<br />
|Zr<br />
|6.51<br />
|0.60<br />
|<br />
|Should be 6.49<br />
|-<br />
|Zirconium Oxide<br />
|ZrO<sub>2</sub><br />
|5.6<br />
|1.001<br />
|<br />
|<br />
|}<br />
<br />
== In Deposition (Thermal Evaporator 2) ==<br />
*[[Media:Thermal evaporator 2-new Sheet1.pdf|Indium evaporation Data]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evaporation_Recipes&diff=163108
Thermal Evaporation Recipes
2025-06-19T21:06:20Z
<p>Biljana: /* Materials Table */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
<br />
=[[Thermal Evaporator 1]]=<br />
<br />
==Materials Table==<br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"<br />
|-<br />
! colspan=8 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #1</div><br />
|- bgcolor="#D0E7FF" <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Material''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol''' <br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %''' <br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Current, Amp'''<br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Dep.rate, A/sec'''<br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Comments'''<br />
|-<br />
|Aluminum<br />
|Al<br />
|2.70<br />
|8.17<br />
|95<br />
|85<br />
|1<br />
|Used often<br />
|-<br />
|Chromium<br />
|Cr<br />
|7.20<br />
|28.95<br />
|95<br />
|85<br />
|2<br />
|Used often<br />
|-<br />
|Cobalt<br />
|Co<br />
|8.71<br />
|25.74<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Copper<br />
|Cu<br />
|8.93<br />
|20.21<br />
|100<br />
|<br />
|<br />
|Used often<br />
|-<br />
|Gold<br />
|Au<br />
|19.32<br />
|23.18<br />
|101.2<br />
|122<br />
|5<br />
|Used often<br />
|-<br />
|Gold/Palladium<br />
|Au.5/Pd.5<br />
|15.86<br />
|23.96<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Palladium<br />
|Au.5/Pd.4<br />
|16.40<br />
|23.80<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Zinc<br />
|Au.95/Zn.05<br />
|18.72<br />
|22.89<br />
|101.2<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Zinc<br />
|Au.90/Zn.10<br />
|18.07<br />
|22.58<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Magnezium<br />
|Mg<br />
|1.74<br />
|5.48<br />
|98.4<br />
|<br />
|<br />
|<br />
|-<br />
|Manganese<br />
|Mn<br />
|7.20<br />
|23.40<br />
|120<br />
|100<br />
|<br />
|<br />
|-<br />
|Nickel<br />
|Ni<br />
|8.90<br />
|26.68<br />
|100<br />
|50<br />
|4.5<br />
|Used often<br />
|-<br />
|Nichrome<br />
|NiCr<br />
|8.32<br />
|27.59<br />
|<br />
|100<br />
|0.4<br />
|<br />
|-<br />
|Palladium<br />
|Pd<br />
|12.40<br />
|24.73<br />
|140.5<br />
|62<br />
|1.5<br />
|Used often<br />
|-<br />
|Silicon Monoxide<br />
|SiO<br />
|2.13<br />
|10.19<br />
|120<br />
|70<br />
|<br />
|<br />
|-<br />
|Silver<br />
|Ag<br />
|10.5<br />
|16.69<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Zinc<br />
|Zn<br />
|7.14<br />
|17.18<br />
|<br />
|50<br />
|4.5<br />
|Used often<br />
|-<br />
|Zinc Oxide<br />
|ZnO<br />
|5.61<br />
|15.88<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Strontium Fluoride<br />
|SrF<sub>2 <br />
|4.28<br />
|12.15<br />
|200<br />
|<br />
|<br />
|<br />
|-<br />
|Iron<br />
|Fe<br />
|7.86<br />
|25.30<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|ITO(IndiumTinOxide)<br />
|In<sub>2</sub>O<sub>3</sub> - SnO<sub>2<br />
|6.43-7.14<br />
|0.841<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Permalloy<br />
|Ni<sub>0.1</sub>Fe<sub>0.2</sub><br />
|8.7<br />
|26.40<br />
|<br />
|140<br />
|0.1<br />
|<br />
|}<br />
<br />
=[[Thermal Evaporator 2]]=<br />
<br />
== Materials Table ==<br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"<br />
|-<br />
! colspan=6 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #2</div><br />
|- bgcolor="#D0E7FF" <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Material''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %''' <br />
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''<br />
|-<br />
|Aluminum<br />
|Al<br />
|2.70<br />
|1.08<br />
|<br />
|<br />
|-<br />
|Antimony<br />
|Sb<br />
|6.620<br />
|0.768<br />
|<br />
|<br />
|-<br />
|Arsenic<br />
|As<br />
|5.73<br />
|0.996<br />
|<br />
|<br />
|-<br />
|Beryllium<br />
|Be<br />
|1.85<br />
|0.543<br />
|<br />
|<br />
|-<br />
|Boron<br />
|B<br />
|2.54<br />
|0.389<br />
|<br />
|<br />
|-<br />
|Cadmium<br />
|Cd<br />
|8.64<br />
|0.682<br />
|<br />
|<br />
|-<br />
|Cadmium sulfide<br />
|CdS<br />
|4.83<br />
|1.02<br />
|<br />
|<br />
|-<br />
|Cadmium telluride<br />
|CdTe<br />
|5.85<br />
|0.980<br />
|<br />
|<br />
|-<br />
|Calcium fluoride<br />
|CaF<sub>2</sub><br />
|3.18<br />
|0.775<br />
|<br />
|Used often<br />
|-<br />
|Carbon (graphite)<br />
|C<br />
|2.25<br />
|3.26<br />
|<br />
|<br />
|-<br />
|Chromium<br />
|Cr<br />
|7.20<br />
|0.305<br />
|155<br />
|Used often<br />
|-<br />
|Cobalt<br />
|Co<br />
|8.71<br />
|0.343<br />
|<br />
|<br />
|-<br />
|Copper<br />
|Cu<br />
|8.93<br />
|0.437<br />
|<br />
|<br />
|-<br />
|Gallium<br />
|Ga<br />
|5.93<br />
|0.593<br />
|<br />
|<br />
|-<br />
|Gallium Arsenide<br />
|GaAs<br />
|5.31<br />
|1.59<br />
|<br />
|<br />
|-<br />
|Germanium<br />
|Ge<br />
|5.35<br />
|0.516<br />
|<br />
|<br />
|-<br />
|Gold<br />
|Au<br />
|19.30<br />
|0.381<br />
|<br />
|Used often<br />
|-<br />
|Indium<br />
|In<br />
|7.30<br />
|0.841<br />
|120<br />
|Used often, tooling factor needs adjustment<br />
|-<br />
|Indium antimonide<br />
|InSb<br />
|5.76<br />
|0.769<br />
|<br />
|<br />
|-<br />
|Iridium<br />
|Ir<br />
|22.4<br />
|0.129<br />
|<br />
|<br />
|-<br />
|Iron<br />
|Fe<br />
|7.86<br />
|0.349<br />
|<br />
|<br />
|-<br />
|Lead<br />
|Pb<br />
|11.3<br />
|1.13<br />
|<br />
|<br />
|-<br />
|Lead sulfide<br />
|PbS<br />
|7.50<br />
|0.566<br />
|<br />
|<br />
|-<br />
|Lithium fluoride<br />
|LiF<br />
|2.638<br />
|0.778<br />
|<br />
|<br />
|-<br />
|Magnesium<br />
|Mg<br />
|1.74<br />
|1.61<br />
|<br />
|<br />
|-<br />
|Magnesium oxide<br />
|MgO<br />
|3.58<br />
|0.411<br />
|<br />
|<br />
|-<br />
|Magnesium Fluoride<br />
|MgF<sub>2</sub><br />
|3.00 ( should be 3.18)<br />
|0.427( should be 0.637)<br />
|<br />
|<br />
|-<br />
|Manganese<br />
|Mn<br />
|7.20<br />
|0.377<br />
|<br />
|<br />
|-<br />
|Manganese(II) Sulfide<br />
|MnS<br />
|3.99<br />
|0.94<br />
|<br />
|<br />
|-<br />
|Mercury<br />
|Hg<br />
|13.46<br />
|0.74<br />
|<br />
|<br />
|-<br />
|Molybdenum<br />
|Mo<br />
|10.2<br />
|0.257<br />
|<br />
|<br />
|-<br />
|Nickel<br />
|Ni<br />
|8.91<br />
|0.331<br />
|<br />
|Used often<br />
|-<br />
|Niobium<br />
|Nb<br />
|8.578<br />
|0.492<br />
|<br />
|<br />
|-<br />
|Niobium(V) Oxide<br />
|Nb<sub>2</sub>O<sub>5</sub><br />
|4.47<br />
|*1.00<br />
|<br />
|*z ratio has not been established<br />
|-<br />
|Palladium<br />
|Pd<br />
|12.0<br />
|0.357<br />
|<br />
|<br />
|-<br />
|Platinum<br />
|Pt<br />
|21.4<br />
|0.245<br />
|<br />
|<br />
|-<br />
|Potasium Cloride<br />
|KCl<br />
|1.98<br />
|2.05<br />
|<br />
|<br />
|-<br />
|Selenium<br />
|Se<br />
|4.82<br />
|0.864<br />
|<br />
|<br />
|-<br />
|Silicon<br />
|Si<br />
|2.32<br />
|0.712<br />
|<br />
|<br />
|-<br />
|Silicon(II) Oxide<br />
|SiO<br />
|2.13<br />
|0.87<br />
|<br />
|<br />
|-<br />
|Silicon dioxide (fused quarz)<br />
|SiO<sub>2</sub><br />
|2.20<br />
|1.07<br />
|<br />
|<br />
|-<br />
|Silver<br />
|Ag<br />
|10.5<br />
|0.529<br />
|<br />
|<br />
|-<br />
|Silver bromide<br />
|AgBr<br />
|6.47<br />
|1.18<br />
|<br />
|<br />
|-<br />
|Silver chloride<br />
|AgCl<br />
|5.56<br />
|1.32<br />
|<br />
|<br />
|-<br />
|Sodium<br />
|Na<br />
|0.97<br />
|4.8<br />
|<br />
|<br />
|-<br />
|Sodium chloride<br />
|NaCl<br />
|2.17<br />
|1.57<br />
|<br />
|<br />
|-<br />
|Tantalum<br />
|Ta<br />
|16.6<br />
|0.262<br />
|<br />
|<br />
|-<br />
|Tantalum(IV) oxide<br />
|Ta<sub>2</sub>O<sub>5</sub><br />
|8.2<br />
|0.30<br />
|<br />
|<br />
|-<br />
|Tin<br />
|Sn<br />
|7.30<br />
|0.724<br />
|200<br />
|Program #9, Tooling factor=200%, cold fixture <br />
|-<br />
|Titanium<br />
|Ti<br />
|4.50<br />
|0.628<br />
|<br />
|Used often<br />
|-<br />
|Titanium (IV) Oxide<br />
|TiO<sub>2</sub><br />
|4.26<br />
|0.40<br />
|<br />
|<br />
|-<br />
|Titanium Oxide<br />
|TiO<br />
|4.90<br />
|*1.00<br />
|<br />
|* z ratio not established<br />
|-<br />
|Tungsten<br />
|W<br />
|19.3<br />
|0.163<br />
|<br />
|<br />
|-<br />
|Tungsten carbide<br />
|WC<br />
|15.6<br />
|0.151<br />
|<br />
|<br />
|-<br />
|Zinc<br />
|Zn<br />
|7.04<br />
|0.514<br />
|<br />
|Used often<br />
|-<br />
|Zinc Oxide<br />
|ZnO<br />
|5.61<br />
|0.556<br />
|<br />
|<br />
|-<br />
|Zinc Sulfide<br />
|ZnS<br />
|4.09<br />
|0.775<br />
|<br />
|<br />
|-<br />
|Zirconium<br />
|Zr<br />
|6.51<br />
|0.60<br />
|<br />
|Should be 6.49<br />
|-<br />
|Zirconium Oxide<br />
|ZrO<sub>2</sub><br />
|5.6<br />
|1.001<br />
|<br />
|<br />
|}<br />
<br />
== In Deposition (Thermal Evaporator 2) ==<br />
*[[Media:Thermal evaporator 2-new Sheet1.pdf|Indium evaporation Data]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evaporation_Recipes&diff=163107
Thermal Evaporation Recipes
2025-06-19T21:05:36Z
<p>Biljana: /* Materials Table */ Updating info for Sn deposition in Thermal evaporator</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
<br />
=[[Thermal Evaporator 1]]=<br />
<br />
==Materials Table==<br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"<br />
|-<br />
! colspan=8 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #1</div><br />
|- bgcolor="#D0E7FF" <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Material''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol''' <br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %''' <br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Current, Amp'''<br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Dep.rate, A/sec'''<br />
! width="95" bgcolor="#D0E7FF" align="center" | '''Comments'''<br />
|-<br />
|Aluminum<br />
|Al<br />
|2.70<br />
|8.17<br />
|95<br />
|85<br />
|1<br />
|Used often<br />
|-<br />
|Chromium<br />
|Cr<br />
|7.20<br />
|28.95<br />
|95<br />
|85<br />
|2<br />
|Used often<br />
|-<br />
|Cobalt<br />
|Co<br />
|8.71<br />
|25.74<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Copper<br />
|Cu<br />
|8.93<br />
|20.21<br />
|100<br />
|<br />
|<br />
|Used often<br />
|-<br />
|Gold<br />
|Au<br />
|19.32<br />
|23.18<br />
|101.2<br />
|122<br />
|5<br />
|Used often<br />
|-<br />
|Gold/Palladium<br />
|Au.5/Pd.5<br />
|15.86<br />
|23.96<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Palladium<br />
|Au.5/Pd.4<br />
|16.40<br />
|23.80<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Zinc<br />
|Au.95/Zn.05<br />
|18.72<br />
|22.89<br />
|101.2<br />
|<br />
|<br />
|<br />
|-<br />
|Gold/Zinc<br />
|Au.90/Zn.10<br />
|18.07<br />
|22.58<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Magnezium<br />
|Mg<br />
|1.74<br />
|5.48<br />
|98.4<br />
|<br />
|<br />
|<br />
|-<br />
|Manganese<br />
|Mn<br />
|7.20<br />
|23.40<br />
|120<br />
|100<br />
|<br />
|<br />
|-<br />
|Nickel<br />
|Ni<br />
|8.90<br />
|26.68<br />
|100<br />
|50<br />
|4.5<br />
|Used often<br />
|-<br />
|Nichrome<br />
|NiCr<br />
|8.32<br />
|27.59<br />
|<br />
|100<br />
|0.4<br />
|<br />
|-<br />
|Palladium<br />
|Pd<br />
|12.40<br />
|24.73<br />
|140.5<br />
|62<br />
|1.5<br />
|Used often<br />
|-<br />
|Silicon Monoxide<br />
|SiO<br />
|2.13<br />
|10.19<br />
|120<br />
|70<br />
|<br />
|<br />
|-<br />
|Silver<br />
|Ag<br />
|10.5<br />
|16.69<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Zinc<br />
|Zn<br />
|7.14<br />
|17.18<br />
|<br />
|50<br />
|4.5<br />
|Used often<br />
|-<br />
|Zinc Oxide<br />
|ZnO<br />
|5.61<br />
|15.88<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Strontium Fluoride<br />
|SrF<sub>2 <br />
|4.28<br />
|12.15<br />
|200<br />
|<br />
|<br />
|<br />
|-<br />
|Iron<br />
|Fe<br />
|7.86<br />
|25.30<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|ITO(IndiumTinOxide)<br />
|In<sub>2</sub>O<sub>3</sub> - SnO<sub>2<br />
|6.43-7.14<br />
|0.841<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
|Permalloy<br />
|Ni<sub>0.1</sub>Fe<sub>0.2</sub><br />
|8.7<br />
|26.40<br />
|<br />
|140<br />
|0.1<br />
|<br />
|}<br />
<br />
=[[Thermal Evaporator 2]]=<br />
<br />
== Materials Table ==<br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"<br />
|-<br />
! colspan=6 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table for Thermal Evaporator #2</div><br />
|- bgcolor="#D0E7FF" <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Material''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio''' <br />
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %''' <br />
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''<br />
|-<br />
|Aluminum<br />
|Al<br />
|2.70<br />
|1.08<br />
|<br />
|<br />
|-<br />
|Antimony<br />
|Sb<br />
|6.620<br />
|0.768<br />
|<br />
|<br />
|-<br />
|Arsenic<br />
|As<br />
|5.73<br />
|0.996<br />
|<br />
|<br />
|-<br />
|Beryllium<br />
|Be<br />
|1.85<br />
|0.543<br />
|<br />
|<br />
|-<br />
|Boron<br />
|B<br />
|2.54<br />
|0.389<br />
|<br />
|<br />
|-<br />
|Cadmium<br />
|Cd<br />
|8.64<br />
|0.682<br />
|<br />
|<br />
|-<br />
|Cadmium sulfide<br />
|CdS<br />
|4.83<br />
|1.02<br />
|<br />
|<br />
|-<br />
|Cadmium telluride<br />
|CdTe<br />
|5.85<br />
|0.980<br />
|<br />
|<br />
|-<br />
|Calcium fluoride<br />
|CaF<sub>2</sub><br />
|3.18<br />
|0.775<br />
|<br />
|Used often<br />
|-<br />
|Carbon (graphite)<br />
|C<br />
|2.25<br />
|3.26<br />
|<br />
|<br />
|-<br />
|Chromium<br />
|Cr<br />
|7.20<br />
|0.305<br />
|155<br />
|Used often<br />
|-<br />
|Cobalt<br />
|Co<br />
|8.71<br />
|0.343<br />
|<br />
|<br />
|-<br />
|Copper<br />
|Cu<br />
|8.93<br />
|0.437<br />
|<br />
|<br />
|-<br />
|Gallium<br />
|Ga<br />
|5.93<br />
|0.593<br />
|<br />
|<br />
|-<br />
|Gallium Arsenide<br />
|GaAs<br />
|5.31<br />
|1.59<br />
|<br />
|<br />
|-<br />
|Germanium<br />
|Ge<br />
|5.35<br />
|0.516<br />
|<br />
|<br />
|-<br />
|Gold<br />
|Au<br />
|19.30<br />
|0.381<br />
|<br />
|Used often<br />
|-<br />
|Indium<br />
|In<br />
|7.30<br />
|0.841<br />
|120<br />
|Used often<br />
|-<br />
|Indium antimonide<br />
|InSb<br />
|5.76<br />
|0.769<br />
|<br />
|<br />
|-<br />
|Iridium<br />
|Ir<br />
|22.4<br />
|0.129<br />
|<br />
|<br />
|-<br />
|Iron<br />
|Fe<br />
|7.86<br />
|0.349<br />
|<br />
|<br />
|-<br />
|Lead<br />
|Pb<br />
|11.3<br />
|1.13<br />
|<br />
|<br />
|-<br />
|Lead sulfide<br />
|PbS<br />
|7.50<br />
|0.566<br />
|<br />
|<br />
|-<br />
|Lithium fluoride<br />
|LiF<br />
|2.638<br />
|0.778<br />
|<br />
|<br />
|-<br />
|Magnesium<br />
|Mg<br />
|1.74<br />
|1.61<br />
|<br />
|<br />
|-<br />
|Magnesium oxide<br />
|MgO<br />
|3.58<br />
|0.411<br />
|<br />
|<br />
|-<br />
|Magnesium Fluoride<br />
|MgF<sub>2</sub><br />
|3.00 ( should be 3.18)<br />
|0.427( should be 0.637)<br />
|<br />
|<br />
|-<br />
|Manganese<br />
|Mn<br />
|7.20<br />
|0.377<br />
|<br />
|<br />
|-<br />
|Manganese(II) Sulfide<br />
|MnS<br />
|3.99<br />
|0.94<br />
|<br />
|<br />
|-<br />
|Mercury<br />
|Hg<br />
|13.46<br />
|0.74<br />
|<br />
|<br />
|-<br />
|Molybdenum<br />
|Mo<br />
|10.2<br />
|0.257<br />
|<br />
|<br />
|-<br />
|Nickel<br />
|Ni<br />
|8.91<br />
|0.331<br />
|<br />
|Used often<br />
|-<br />
|Niobium<br />
|Nb<br />
|8.578<br />
|0.492<br />
|<br />
|<br />
|-<br />
|Niobium(V) Oxide<br />
|Nb<sub>2</sub>O<sub>5</sub><br />
|4.47<br />
|*1.00<br />
|<br />
|*z ratio has not been established<br />
|-<br />
|Palladium<br />
|Pd<br />
|12.0<br />
|0.357<br />
|<br />
|<br />
|-<br />
|Platinum<br />
|Pt<br />
|21.4<br />
|0.245<br />
|<br />
|<br />
|-<br />
|Potasium Cloride<br />
|KCl<br />
|1.98<br />
|2.05<br />
|<br />
|<br />
|-<br />
|Selenium<br />
|Se<br />
|4.82<br />
|0.864<br />
|<br />
|<br />
|-<br />
|Silicon<br />
|Si<br />
|2.32<br />
|0.712<br />
|<br />
|<br />
|-<br />
|Silicon(II) Oxide<br />
|SiO<br />
|2.13<br />
|0.87<br />
|<br />
|<br />
|-<br />
|Silicon dioxide (fused quarz)<br />
|SiO<sub>2</sub><br />
|2.20<br />
|1.07<br />
|<br />
|<br />
|-<br />
|Silver<br />
|Ag<br />
|10.5<br />
|0.529<br />
|<br />
|<br />
|-<br />
|Silver bromide<br />
|AgBr<br />
|6.47<br />
|1.18<br />
|<br />
|<br />
|-<br />
|Silver chloride<br />
|AgCl<br />
|5.56<br />
|1.32<br />
|<br />
|<br />
|-<br />
|Sodium<br />
|Na<br />
|0.97<br />
|4.8<br />
|<br />
|<br />
|-<br />
|Sodium chloride<br />
|NaCl<br />
|2.17<br />
|1.57<br />
|<br />
|<br />
|-<br />
|Tantalum<br />
|Ta<br />
|16.6<br />
|0.262<br />
|<br />
|<br />
|-<br />
|Tantalum(IV) oxide<br />
|Ta<sub>2</sub>O<sub>5</sub><br />
|8.2<br />
|0.30<br />
|<br />
|<br />
|-<br />
|Tin<br />
|Sn<br />
|7.30<br />
|0.724<br />
|200<br />
|Program #9, Tooling factor=200%, cold fixture <br />
|-<br />
|Titanium<br />
|Ti<br />
|4.50<br />
|0.628<br />
|<br />
|Used often<br />
|-<br />
|Titanium (IV) Oxide<br />
|TiO<sub>2</sub><br />
|4.26<br />
|0.40<br />
|<br />
|<br />
|-<br />
|Titanium Oxide<br />
|TiO<br />
|4.90<br />
|*1.00<br />
|<br />
|* z ratio not established<br />
|-<br />
|Tungsten<br />
|W<br />
|19.3<br />
|0.163<br />
|<br />
|<br />
|-<br />
|Tungsten carbide<br />
|WC<br />
|15.6<br />
|0.151<br />
|<br />
|<br />
|-<br />
|Zinc<br />
|Zn<br />
|7.04<br />
|0.514<br />
|<br />
|Used often<br />
|-<br />
|Zinc Oxide<br />
|ZnO<br />
|5.61<br />
|0.556<br />
|<br />
|<br />
|-<br />
|Zinc Sulfide<br />
|ZnS<br />
|4.09<br />
|0.775<br />
|<br />
|<br />
|-<br />
|Zirconium<br />
|Zr<br />
|6.51<br />
|0.60<br />
|<br />
|Should be 6.49<br />
|-<br />
|Zirconium Oxide<br />
|ZrO<sub>2</sub><br />
|5.6<br />
|1.001<br />
|<br />
|<br />
|}<br />
<br />
== In Deposition (Thermal Evaporator 2) ==<br />
*[[Media:Thermal evaporator 2-new Sheet1.pdf|Indium evaporation Data]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=163061
Contact Alignment Recipes
2025-05-19T21:10:52Z
<p>Biljana: /* SU-8 Recipes */ Update for SU8-2015 recipe</p>
<hr />
<div>{{recipes|Lithography}} <br />
[[category: Lithography]]<br />
<br />
=Notes=<br />
<br />
Below is a listing of contact lithography recipes for use with designated aligners. <br />
<br />
Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. <br />
<br />
For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop. <br />
<br />
Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate. <br />
<br />
Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
| align="left" |<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|30”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|8”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*Post Exposure Bake 110°C /60”<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood Exposure**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|30"<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated (undiluted) 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*For Undercut<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|2.5 krpm/30”<br />
|110°C/60”<br />
|~ 3.5 um<br />
|5.0”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|1.5 krpm/45”<br />
|110°C/60”<br />
|~ 5um<br />
|7”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|13.1”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=== SU-8 Recipes ===<br />
Staff-developed recipes for SU-8:<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/b/b3/SU8-2015_for_WIKi_page.pdf SU8-2015 Biljana's Updated recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:SU8-2015_for_WIKi_page.pdf&diff=163060
File:SU8-2015 for WIKi page.pdf
2025-05-19T21:09:11Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=163059
Contact Alignment Recipes
2025-05-19T21:08:47Z
<p>Biljana: /* SU-8 Recipes */</p>
<hr />
<div>{{recipes|Lithography}} <br />
[[category: Lithography]]<br />
<br />
=Notes=<br />
<br />
Below is a listing of contact lithography recipes for use with designated aligners. <br />
<br />
Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. <br />
<br />
For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop. <br />
<br />
Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate. <br />
<br />
Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
| align="left" |<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|30”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|8”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*Post Exposure Bake 110°C /60”<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood Exposure**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|30"<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated (undiluted) 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*For Undercut<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|2.5 krpm/30”<br />
|110°C/60”<br />
|~ 3.5 um<br />
|5.0”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|1.5 krpm/45”<br />
|110°C/60”<br />
|~ 5um<br />
|7”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|13.1”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=== SU-8 Recipes ===<br />
Staff-developed recipes for SU-8:<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]<br />
<br />
<br />
*[Biljana's Updated recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=163058
Contact Alignment Recipes
2025-05-19T21:08:31Z
<p>Biljana: /* SU-8 Recipes */</p>
<hr />
<div>{{recipes|Lithography}} <br />
[[category: Lithography]]<br />
<br />
=Notes=<br />
<br />
Below is a listing of contact lithography recipes for use with designated aligners. <br />
<br />
Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. <br />
<br />
For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop. <br />
<br />
Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate. <br />
<br />
Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
| align="left" |<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|30”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|8”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*Post Exposure Bake 110°C /60”<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood Exposure**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|30"<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated (undiluted) 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*For Undercut<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|2.5 krpm/30”<br />
|110°C/60”<br />
|~ 3.5 um<br />
|5.0”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|1.5 krpm/45”<br />
|110°C/60”<br />
|~ 5um<br />
|7”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|13.1”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=== SU-8 Recipes ===<br />
Staff-developed recipes for SU-8:<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]<br />
<br />
*[https://drive.google.com/drive/folders/1N0p4damL2cOR5JrH7skOnD0KS2w7_dPe SU8-2015 Recipe Update]<br />
*[Biljana's Updated recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=163057
Contact Alignment Recipes
2025-05-19T19:12:08Z
<p>Biljana: /* SU-8 Recipes */</p>
<hr />
<div>{{recipes|Lithography}} <br />
[[category: Lithography]]<br />
<br />
=Notes=<br />
<br />
Below is a listing of contact lithography recipes for use with designated aligners. <br />
<br />
Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. <br />
<br />
For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop. <br />
<br />
Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate. <br />
<br />
Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
| align="left" |<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|30”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|8”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*Post Exposure Bake 110°C /60”<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood Exposure**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|30"<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated (undiluted) 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*For Undercut<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|2.5 krpm/30”<br />
|110°C/60”<br />
|~ 3.5 um<br />
|5.0”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|1.5 krpm/45”<br />
|110°C/60”<br />
|~ 5um<br />
|7”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|13.1”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=== SU-8 Recipes ===<br />
Staff-developed recipes for SU-8:<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]<br />
*[Biljana's Updated recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=163056
Contact Alignment Recipes
2025-05-19T19:11:58Z
<p>Biljana: /* SU-8 Recipes */</p>
<hr />
<div>{{recipes|Lithography}} <br />
[[category: Lithography]]<br />
<br />
=Notes=<br />
<br />
Below is a listing of contact lithography recipes for use with designated aligners. <br />
<br />
Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. <br />
<br />
For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop. <br />
<br />
Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate. <br />
<br />
Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
| align="left" |<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|30”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|8”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*Post Exposure Bake 110°C /60”<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood Exposure**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|30"<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated (undiluted) 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*For Undercut<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|2.5 krpm/30”<br />
|110°C/60”<br />
|~ 3.5 um<br />
|5.0”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|1.5 krpm/45”<br />
|110°C/60”<br />
|~ 5um<br />
|7”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|13.1”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=== SU-8 Recipes ===<br />
Staff-developed recipes for SU-8:<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]<br />
*[Biljana's Updated recipe}<br />
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=163055
Lithography Recipes
2025-05-19T19:11:14Z
<p>Biljana: /* Process Ranking Table */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]<br />
<br />
* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''<br />
* ''Explains how to locate the'' ''"Process Window" for your lithography.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="#D0E7FF" |A<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)|R1}}<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing. <br />
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!<br />
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.<br />
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. <br />
<br />
HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''220C'''<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''210C'''<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''200C'''<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''185C'''<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)<br />
<br />
'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|''<u>1.5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[1.5K]-'''185C'''<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''200C'''<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''210C'''<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''220C'''<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[5K]-'''185C'''<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''200C'''<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''210C'''<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''220C'''<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6['''2K''']-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|''varying spin speed''<br />
|<br />
|COAT-UV6['''2.5K''']-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3K''']-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3.5K''']-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''4K''']-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''5K''']-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''6K''']-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
<br />
Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=163054
Lithography Recipes
2025-05-19T19:10:01Z
<p>Biljana: /* Process Ranking Table */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]<br />
<br />
* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''<br />
* ''Explains how to locate the'' ''"Process Window" for your lithography.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)|R1}}<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing. <br />
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!<br />
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.<br />
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. <br />
<br />
HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''220C'''<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''210C'''<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''200C'''<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''185C'''<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)<br />
<br />
'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|''<u>1.5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[1.5K]-'''185C'''<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''200C'''<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''210C'''<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''220C'''<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[5K]-'''185C'''<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''200C'''<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''210C'''<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''220C'''<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6['''2K''']-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|''varying spin speed''<br />
|<br />
|COAT-UV6['''2.5K''']-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3K''']-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3.5K''']-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''4K''']-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''5K''']-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''6K''']-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
<br />
Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=163053
Lithography Recipes
2025-05-19T19:00:16Z
<p>Biljana: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]<br />
<br />
* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''<br />
* ''Explains how to locate the'' ''"Process Window" for your lithography.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |R1<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing. <br />
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!<br />
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.<br />
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. <br />
<br />
HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''220C'''<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''210C'''<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''200C'''<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''185C'''<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)<br />
<br />
'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|''<u>1.5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[1.5K]-'''185C'''<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''200C'''<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''210C'''<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''220C'''<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[5K]-'''185C'''<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''200C'''<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''210C'''<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''220C'''<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6['''2K''']-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|''varying spin speed''<br />
|<br />
|COAT-UV6['''2.5K''']-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3K''']-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3.5K''']-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''4K''']-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''5K''']-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''6K''']-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
<br />
Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=163052
Lithography Recipes
2025-05-19T18:59:34Z
<p>Biljana: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]<br />
<br />
* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''<br />
* ''Explains how to locate the'' ''"Process Window" for your lithography.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |R1<br />
|[//wiki.nanofab.ucsb.edu/wiki/Contact_Alignment_Recipes#Negative_Resist_(MA-6)]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing. <br />
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!<br />
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.<br />
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. <br />
<br />
HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''220C'''<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''210C'''<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''200C'''<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''185C'''<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)<br />
<br />
'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|''<u>1.5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[1.5K]-'''185C'''<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''200C'''<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''210C'''<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''220C'''<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[5K]-'''185C'''<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''200C'''<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''210C'''<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''220C'''<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6['''2K''']-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|''varying spin speed''<br />
|<br />
|COAT-UV6['''2.5K''']-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3K''']-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3.5K''']-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''4K''']-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''5K''']-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''6K''']-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
<br />
Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=163051
Lithography Recipes
2025-05-19T18:56:56Z
<p>Biljana: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]<br />
<br />
* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''<br />
* ''Explains how to locate the'' ''"Process Window" for your lithography.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |R<br />
<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing. <br />
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!<br />
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.<br />
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. <br />
<br />
HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''220C'''<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''210C'''<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''200C'''<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-'''185C'''<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)<br />
<br />
'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|''<u>1.5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[1.5K]-'''185C'''<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''200C'''<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''210C'''<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-'''220C'''<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm</u> recipes''<br />
|<br />
|COAT-DSK101-304[5K]-'''185C'''<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''200C'''<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''210C'''<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-'''220C'''<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>'''<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6['''2K''']-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|''varying spin speed''<br />
|<br />
|COAT-UV6['''2.5K''']-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3K''']-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''3.5K''']-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''4K''']-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''5K''']-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6['''6K''']-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|''<u>1.5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|''<u>5krpm DSK</u> recipes with''<br />
''UV6- various spin speeds''<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)<br />
<br />
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)<br />
|-<br />
|''Varying developer time''<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''10S'''<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''15S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''20S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''25S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''30S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''35S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''40S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-'''45S'''<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
<br />
Item numbers in (parentheses) indicate the specific stocked formulation, when the datasheet shows multiple formulations.<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=163050
Contact Alignment Recipes
2025-05-19T18:50:47Z
<p>Biljana: </p>
<hr />
<div>{{recipes|Lithography}} <br />
[[category: Lithography]]<br />
<br />
=Notes=<br />
<br />
Below is a listing of contact lithography recipes for use with designated aligners. <br />
<br />
Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. <br />
<br />
For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop. <br />
<br />
Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate. <br />
<br />
Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
| align="left" |<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|30”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |Developer<br />
! width="125" |Developer Time<br />
! width="300" |Comments<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
| align="left" |<br />
|-<br />
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
| align="left" |<br />
|-<br />
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|8”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*Post Exposure Bake 110°C /60”<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
| align="left" |<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
<br />
|-<br />
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector. <br />
<br />
In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4. <br />
<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" |Resist<br />
! width="100" |Spin Cond.<br />
! width="100" |Bake<br />
! width="100" |Thickness<br />
! width="125" |Exposure Time<br />
! width="100" |PEB*<br />
! width="100" |Flood Exposure**<br />
! width="125" |Developer<br />
! width="125" |Developer Time<br />
! width="350" |Comments<br />
|-<br />
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|30"<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
| align="left" |<br />
*Concentrated (undiluted) 400K Dev. Etches 5214<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
| align="left" |<br />
*For Undercut<br />
<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|2.5 krpm/30”<br />
|110°C/60”<br />
|~ 3.5 um<br />
|5.0”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]<br />
|1.5 krpm/45”<br />
|110°C/60”<br />
|~ 5um<br />
|7”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|70”<br />
| align="left" |<br />
*For Undercut<br />
|-<br />
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]<br />
|3 krpm/30”<br />
|140°C/180”<br />
|~ um<br />
|13.1”<br />
|100°C/60”<br />
|<br />
|AZ300MIF<br />
|30”<br />
| align="left" |<br />
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'<br />
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY<br />
|-<br />
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal<br />
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.<br />
|}<br />
<br />
=== SU-8 Recipes ===<br />
Staff-developed recipes for SU-8:<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]<br />
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Processing_Recipes&diff=162993
Thermal Processing Recipes
2025-04-23T18:18:15Z
<p>Biljana: /* Available Recipes (Tystar 8300) */</p>
<hr />
<div>==[[Tube Furnace (Tystar 8300)|Tystar 8300]]==<br />
<br />
=== Available Recipes (Tystar 8300) ===<br />
The following are the available recipes on each furnace tube:<br />
<br />
'''Tube 1: Various applications'''<br />
*SOG425.001 - ''Spin-On Glass Cure''<br />
*ALGAAS.001 - ''Oxidation of AlGaAs'' <br />
*ANNEAL.001 - ''Anneal with variable time and temp.''<br />
'''Tube 2: Cleaned Silicon Only'''<br />
*WET1050.002 - ''WetOx at 1050°C''<br />
* DRY1050.002 - ''DryOx at 1050°C''<br />
*WETVAR.002 - ''WetOx, variable temp.''<br />
*DRYVAR.002 - ''DryOx, variable temp.''<br />
'''Tube 3: Processed silicon or other anneals.'''<br />
*WET1050.003 - ''WetOx at 1050°C''<br />
*DRY1050.003 - ''DryOx at 1050°C''<br />
*WETVAR.003 - ''WetOx, variable temp.'' <br />
*DRYVAR.003 - ''DryOx, variable temp.''<br />
*ANNEAL.003 - ''Anneal with variable time and temperature''<br />
Data: Tube3, Recipe "WetVar.003" at 750C, TOX rate= 0.228nm/min, n@632.8nm= 1.47067, BHF etch rate=79nm/min<br />
<br />
===Process Limits (Tystar 8300)===<br />
*'''Max temperatures (Tystar 8300)'''<br />
**Tube 1: 800°C max.<br />
**Tube 2: 1100°C, for ≤24hr<br />
**Tube 3: 1100°C, for ≤24hr<br />
*'''DRY1050''' may not be run for more than 3hrs. O2 flow is 3SLPM, which is too high to run for more than 3hr without depleting the bottle.<br />
**Contact supervisor for other options, such as '''''DRYVAR''''' @ 1100°C, or with lower O2 flow.<br />
*'''WET1050''' may not be run for more than 24hrs without authorization, due to O2 bottle capacity. Contact supervisor if need to run longer.<br />
*No recipe should be run with >1slpm gas flow without discussing with supervisor first, or gas bottles will be depleted very fast and likely run out during your process.<br />
=== Wafer Cleaning ===<br />
For Tube #2, Silicon wafer cleaning, the following process is recommended:<br />
<br />
# If brand new wafers, they should be already relatively clean. Otherwise Acetone/ISO clean might be needed to remove particles - optional<br />
# Use [[Wet Benches#Wafer Toxic Corrosive Benches|Bay 4 toxic corrosive bench]] to submerge wafers for 20min in PureStrip @ 60°C. Replenish if needed, since PureStrip degrades after a few days at 60°C.<br />
# QDR - rinse.<br />
# Transport to Bay 5 HF bench (keep in water - optional) - use Chemical Transport Container.<br />
# Submerge in HF for 10min.<br />
# Rinse in DI 3x at HF bench. Pure HF goes down special drain, while rinse water can go down normal drain.<br />
# Dry with Nitrogen gun OR SRD "Spin Rinse Dryer" at Bay 5.<br />
# Ready to load into Tystar quartz boats, run recipe on Tystar. <br />
<br />
===Oxidation Recipes (Tystar 8300)===<br />
<br />
==== Calculating Oxidation Times ====<br />
Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.<br />
Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.<br />
<br />
Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy. <br />
<br />
A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator]. <br />
<br />
====1050°C Dry Oxidation====<br />
<br />
*Recipe Name: '''''DRY1050'''''<br />
*Tube #2 for Cleaned Silicon Only<br />
*Tube #3 for processed silicon or other anneals.<br />
<br />
=====Simulation Parameters=====<br />
<br />
*Partial Pressure = 1.12 (best fit to measured data below)<br />
*<100>, 1050°C, 10Å Native Oxide, no dopants<br />
<br />
[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.|none|thumb|300x300px|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]<br />
<br />
====1050°C Wet Oxidation====<br />
<br />
*Recipe Name: '''''WET1050'''''<br />
*Tube #2 for Cleaned Silicon Only<br />
*Tube #3 for processed silicon or other anneals.<br />
<br />
=====Simulation Parameters=====<br />
<br />
*Partial Pressure = 1.09 (best fit to measured data below)<br />
*<100>, 1050°C, 10Å Native Oxide, no dopants<br />
<br />
{|<br />
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]<br />
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]<br />
|}<br />
<br />
====AlGaAs Oxidation====<br />
A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.<br />
<br />
==Wafer Substrate Bonding==<br />
<br />
===Direct Bonding===<br />
Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]] or HeraTherm oven.<br />
<br />
Il addition, the [[Flip-Chip Bonder (Finetech)|Fine-Tech Flip-Chip Bonder]] can perform aligned bonding of various-sized pieces. The Fine-Tech can do metal-to-metal thermo-compression bonding with ultrasonic assist.<br />
<br />
The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)|Goniometer]] allow for surface prep/inspection prior to bonding.<br />
<br />
===Bonding with Intermediate/adhesive layer===<br />
The [[Wafer Bonder (Logitech WBS7)|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax or other intermediate layer, while applying pressure to the top surface to improve uniform wax distribution. Please see the '''''Recipes > Packaging > [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|<u>Logitech Bonder</u>]]''''' page for recipes.<br />
<br />
==[[Tube Furnace AlGaAs Oxidation (Lindberg)]]==<br />
Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.<br />
<br />
Maximum time is about 3 hours before the bubbler water temperature becomes uncontrolled.<br />
<br />
Recipes are available, please ask the NanoFab Process group staff.<br />
<br />
==[[Rapid Thermal Processor (SSI Solaris 150)]]==<br />
[[Category:Processing]]<br />
{{todo|Add starting recipes for RTP}}<br />
<br />
== Rapid Thermal Annealer (AET RTA) ==<br />
{{todo|Add starting recipes for RTA}}</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Processing_Recipes&diff=162992
Thermal Processing Recipes
2025-04-23T18:17:53Z
<p>Biljana: /* Tystar 8300 */ added index</p>
<hr />
<div>==[[Tube Furnace (Tystar 8300)|Tystar 8300]]==<br />
<br />
=== Available Recipes (Tystar 8300) ===<br />
The following are the available recipes on each furnace tube:<br />
<br />
'''Tube 1: Various applications'''<br />
*SOG425.001 - ''Spin-On Glass Cure''<br />
*ALGAAS.001 - ''Oxidation of AlGaAs'' <br />
*ANNEAL.001 - ''Anneal with variable time and temp.''<br />
'''Tube 2: Cleaned Silicon Only'''<br />
*WET1050.002 - ''WetOx at 1050°C''<br />
* DRY1050.002 - ''DryOx at 1050°C''<br />
*WETVAR.002 - ''WetOx, variable temp.''<br />
*DRYVAR.002 - ''DryOx, variable temp.''<br />
'''Tube 3: Processed silicon or other anneals.'''<br />
*WET1050.003 - ''WetOx at 1050°C''<br />
*DRY1050.003 - ''DryOx at 1050°C''<br />
*WETVAR.003 - ''WetOx, variable temp.'' <br />
*DRYVAR.003 - ''DryOx, variable temp.''<br />
*ANNEAL.003 - ''Anneal with variable time and temperature''<br />
Data: Tube3, Recipe "WetVAr.003" at 750C, TOX rate= 0.228nm/min, n@632.8nm= 1.47067, BHF etch rate=79nm/min<br />
<br />
===Process Limits (Tystar 8300)===<br />
*'''Max temperatures (Tystar 8300)'''<br />
**Tube 1: 800°C max.<br />
**Tube 2: 1100°C, for ≤24hr<br />
**Tube 3: 1100°C, for ≤24hr<br />
*'''DRY1050''' may not be run for more than 3hrs. O2 flow is 3SLPM, which is too high to run for more than 3hr without depleting the bottle.<br />
**Contact supervisor for other options, such as '''''DRYVAR''''' @ 1100°C, or with lower O2 flow.<br />
*'''WET1050''' may not be run for more than 24hrs without authorization, due to O2 bottle capacity. Contact supervisor if need to run longer.<br />
*No recipe should be run with >1slpm gas flow without discussing with supervisor first, or gas bottles will be depleted very fast and likely run out during your process.<br />
=== Wafer Cleaning ===<br />
For Tube #2, Silicon wafer cleaning, the following process is recommended:<br />
<br />
# If brand new wafers, they should be already relatively clean. Otherwise Acetone/ISO clean might be needed to remove particles - optional<br />
# Use [[Wet Benches#Wafer Toxic Corrosive Benches|Bay 4 toxic corrosive bench]] to submerge wafers for 20min in PureStrip @ 60°C. Replenish if needed, since PureStrip degrades after a few days at 60°C.<br />
# QDR - rinse.<br />
# Transport to Bay 5 HF bench (keep in water - optional) - use Chemical Transport Container.<br />
# Submerge in HF for 10min.<br />
# Rinse in DI 3x at HF bench. Pure HF goes down special drain, while rinse water can go down normal drain.<br />
# Dry with Nitrogen gun OR SRD "Spin Rinse Dryer" at Bay 5.<br />
# Ready to load into Tystar quartz boats, run recipe on Tystar. <br />
<br />
===Oxidation Recipes (Tystar 8300)===<br />
<br />
==== Calculating Oxidation Times ====<br />
Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.<br />
Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.<br />
<br />
Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy. <br />
<br />
A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator]. <br />
<br />
====1050°C Dry Oxidation====<br />
<br />
*Recipe Name: '''''DRY1050'''''<br />
*Tube #2 for Cleaned Silicon Only<br />
*Tube #3 for processed silicon or other anneals.<br />
<br />
=====Simulation Parameters=====<br />
<br />
*Partial Pressure = 1.12 (best fit to measured data below)<br />
*<100>, 1050°C, 10Å Native Oxide, no dopants<br />
<br />
[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.|none|thumb|300x300px|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]<br />
<br />
====1050°C Wet Oxidation====<br />
<br />
*Recipe Name: '''''WET1050'''''<br />
*Tube #2 for Cleaned Silicon Only<br />
*Tube #3 for processed silicon or other anneals.<br />
<br />
=====Simulation Parameters=====<br />
<br />
*Partial Pressure = 1.09 (best fit to measured data below)<br />
*<100>, 1050°C, 10Å Native Oxide, no dopants<br />
<br />
{|<br />
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]<br />
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]<br />
|}<br />
<br />
====AlGaAs Oxidation====<br />
A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.<br />
<br />
==Wafer Substrate Bonding==<br />
<br />
===Direct Bonding===<br />
Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]] or HeraTherm oven.<br />
<br />
Il addition, the [[Flip-Chip Bonder (Finetech)|Fine-Tech Flip-Chip Bonder]] can perform aligned bonding of various-sized pieces. The Fine-Tech can do metal-to-metal thermo-compression bonding with ultrasonic assist.<br />
<br />
The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)|Goniometer]] allow for surface prep/inspection prior to bonding.<br />
<br />
===Bonding with Intermediate/adhesive layer===<br />
The [[Wafer Bonder (Logitech WBS7)|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax or other intermediate layer, while applying pressure to the top surface to improve uniform wax distribution. Please see the '''''Recipes > Packaging > [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|<u>Logitech Bonder</u>]]''''' page for recipes.<br />
<br />
==[[Tube Furnace AlGaAs Oxidation (Lindberg)]]==<br />
Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.<br />
<br />
Maximum time is about 3 hours before the bubbler water temperature becomes uncontrolled.<br />
<br />
Recipes are available, please ask the NanoFab Process group staff.<br />
<br />
==[[Rapid Thermal Processor (SSI Solaris 150)]]==<br />
[[Category:Processing]]<br />
{{todo|Add starting recipes for RTP}}<br />
<br />
== Rapid Thermal Annealer (AET RTA) ==<br />
{{todo|Add starting recipes for RTA}}</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=UV_Ozone_Reactor&diff=162991
UV Ozone Reactor
2025-04-23T18:16:06Z
<p>Biljana: /* About */ adding data for UV ozone 20min on Si quarter that was previously BHF etched [no native oxide].</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Ozone.jpg<br />
|type = Dry Etch <br />
|super= Lee Sawyer<br />
|super2= Tony Bosch<br />
|model=144AX<br />
|location=Bay 5<br />
|description = UV Ozone Cleaner<br />
|manufacturer = Jelight<br />
}} <br />
==About==<br />
UV+O (atomic oxygen) cleaning method is a photosensitized oxidation process in which the contaminant molecules of photo-resists, resins, human skin oils, cleaning solvent residues, silicone oils, and flux are excited and/or dissociated by the absorption of short-wavelength UV radiation. Near atomically clean surfaces can be achieved in less than one minute. In addition, this process does not damage any sensitive device structures of MOS gate oxide. The system can be used for oxygen activation, etching or oxidation of a surface without ion bombardment.<br />
<br />
==Documentation==<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/3/3e/UV_Ozone_SOP_Rev_A.pdf UV Ozone Reactor SOP]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/79/UV_Ozone_Manual_Jelight_M-144AX.pdf UV Ozone Manual]<br />
*Data [Si quarter, 20min UV Ozone ~1nm thick oxide]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Processing_Recipes&diff=162990
Thermal Processing Recipes
2025-04-23T18:12:44Z
<p>Biljana: /* Available Recipes (Tystar 8300) */ Adding TOX rate and BHF etch rate for Thermally grown Oxide in Tube #3 at 750C</p>
<hr />
<div>==[[Tube Furnace (Tystar 8300)|Tystar 8300]]==<br />
<br />
=== Available Recipes (Tystar 8300) ===<br />
The following are the available recipes on each furnace tube:<br />
<br />
'''Tube 1: Various applications'''<br />
*SOG425.001 - ''Spin-On Glass Cure''<br />
*ALGAAS.001 - ''Oxidation of AlGaAs'' <br />
*ANNEAL.001 - ''Anneal with variable time and temp.''<br />
'''Tube 2: Cleaned Silicon Only'''<br />
*WET1050.002 - ''WetOx at 1050°C''<br />
* DRY1050.002 - ''DryOx at 1050°C''<br />
*WETVAR.002 - ''WetOx, variable temp.''<br />
*DRYVAR.002 - ''DryOx, variable temp.''<br />
'''Tube 3: Processed silicon or other anneals.'''<br />
*WET1050.003 - ''WetOx at 1050°C''<br />
*DRY1050.003 - ''DryOx at 1050°C''<br />
*WETVAR.003 - ''WetOx, variable temp.'' <br />
*DRYVAR.003 - ''DryOx, variable temp.''<br />
*ANNEAL.003 - ''Anneal with variable time and temperature''<br />
Data: Tube3, Recipe "WetVAr.003" at 750C, TOX rate= 0.228nm/min, BHF etch rate=79nm/min<br />
<br />
===Process Limits (Tystar 8300)===<br />
*'''Max temperatures (Tystar 8300)'''<br />
**Tube 1: 800°C max.<br />
**Tube 2: 1100°C, for ≤24hr<br />
**Tube 3: 1100°C, for ≤24hr<br />
*'''DRY1050''' may not be run for more than 3hrs. O2 flow is 3SLPM, which is too high to run for more than 3hr without depleting the bottle.<br />
**Contact supervisor for other options, such as '''''DRYVAR''''' @ 1100°C, or with lower O2 flow.<br />
*'''WET1050''' may not be run for more than 24hrs without authorization, due to O2 bottle capacity. Contact supervisor if need to run longer.<br />
*No recipe should be run with >1slpm gas flow without discussing with supervisor first, or gas bottles will be depleted very fast and likely run out during your process.<br />
=== Wafer Cleaning ===<br />
For Tube #2, Silicon wafer cleaning, the following process is recommended:<br />
<br />
# If brand new wafers, they should be already relatively clean. Otherwise Acetone/ISO clean might be needed to remove particles - optional<br />
# Use [[Wet Benches#Wafer Toxic Corrosive Benches|Bay 4 toxic corrosive bench]] to submerge wafers for 20min in PureStrip @ 60°C. Replenish if needed, since PureStrip degrades after a few days at 60°C.<br />
# QDR - rinse.<br />
# Transport to Bay 5 HF bench (keep in water - optional) - use Chemical Transport Container.<br />
# Submerge in HF for 10min.<br />
# Rinse in DI 3x at HF bench. Pure HF goes down special drain, while rinse water can go down normal drain.<br />
# Dry with Nitrogen gun OR SRD "Spin Rinse Dryer" at Bay 5.<br />
# Ready to load into Tystar quartz boats, run recipe on Tystar. <br />
<br />
===Oxidation Recipes (Tystar 8300)===<br />
<br />
==== Calculating Oxidation Times ====<br />
Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.<br />
Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.<br />
<br />
Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy. <br />
<br />
A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator]. <br />
<br />
====1050°C Dry Oxidation====<br />
<br />
*Recipe Name: '''''DRY1050'''''<br />
*Tube #2 for Cleaned Silicon Only<br />
*Tube #3 for processed silicon or other anneals.<br />
<br />
=====Simulation Parameters=====<br />
<br />
*Partial Pressure = 1.12 (best fit to measured data below)<br />
*<100>, 1050°C, 10Å Native Oxide, no dopants<br />
<br />
[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.|none|thumb|300x300px|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]<br />
<br />
====1050°C Wet Oxidation====<br />
<br />
*Recipe Name: '''''WET1050'''''<br />
*Tube #2 for Cleaned Silicon Only<br />
*Tube #3 for processed silicon or other anneals.<br />
<br />
=====Simulation Parameters=====<br />
<br />
*Partial Pressure = 1.09 (best fit to measured data below)<br />
*<100>, 1050°C, 10Å Native Oxide, no dopants<br />
<br />
{|<br />
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]<br />
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]<br />
|}<br />
<br />
====AlGaAs Oxidation====<br />
A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.<br />
<br />
==Wafer Substrate Bonding==<br />
<br />
===Direct Bonding===<br />
Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]] or HeraTherm oven.<br />
<br />
Il addition, the [[Flip-Chip Bonder (Finetech)|Fine-Tech Flip-Chip Bonder]] can perform aligned bonding of various-sized pieces. The Fine-Tech can do metal-to-metal thermo-compression bonding with ultrasonic assist.<br />
<br />
The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)|Goniometer]] allow for surface prep/inspection prior to bonding.<br />
<br />
===Bonding with Intermediate/adhesive layer===<br />
The [[Wafer Bonder (Logitech WBS7)|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax or other intermediate layer, while applying pressure to the top surface to improve uniform wax distribution. Please see the '''''Recipes > Packaging > [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|<u>Logitech Bonder</u>]]''''' page for recipes.<br />
<br />
==[[Tube Furnace AlGaAs Oxidation (Lindberg)]]==<br />
Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.<br />
<br />
Maximum time is about 3 hours before the bubbler water temperature becomes uncontrolled.<br />
<br />
Recipes are available, please ask the NanoFab Process group staff.<br />
<br />
==[[Rapid Thermal Processor (SSI Solaris 150)]]==<br />
[[Category:Processing]]<br />
{{todo|Add starting recipes for RTP}}<br />
<br />
== Rapid Thermal Annealer (AET RTA) ==<br />
{{todo|Add starting recipes for RTA}}</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Processing_Recipes&diff=162989
Thermal Processing Recipes
2025-04-23T17:59:09Z
<p>Biljana: /* Available Recipes (Tystar 8300) */</p>
<hr />
<div>==[[Tube Furnace (Tystar 8300)|Tystar 8300]]==<br />
<br />
=== Available Recipes (Tystar 8300) ===<br />
The following are the available recipes on each furnace tube:<br />
<br />
'''Tube 1: Various applications'''<br />
*SOG425.001 - ''Spin-On Glass Cure''<br />
*ALGAAS.001 - ''Oxidation of AlGaAs'' <br />
*ANNEAL.001 - ''Anneal with variable time and temp.''<br />
'''Tube 2: Cleaned Silicon Only'''<br />
*WET1050.002 - ''WetOx at 1050°C''<br />
* DRY1050.002 - ''DryOx at 1050°C''<br />
*WETVAR.002 - ''WetOx, variable temp.''<br />
*DRYVAR.002 - ''DryOx, variable temp.''<br />
'''Tube 3: Processed silicon or other anneals.'''<br />
*WET1050.003 - ''WetOx at 1050°C''<br />
*DRY1050.003 - ''DryOx at 1050°C''<br />
*WETVAR.003 - ''WetOx, variable temp.'' <br />
*DRYVAR.003 - ''DryOx, variable temp.''<br />
*ANNEAL.003 - ''Anneal with variable time and temperature''<br />
===Process Limits (Tystar 8300)===<br />
*'''Max temperatures (Tystar 8300)'''<br />
**Tube 1: 800°C max.<br />
**Tube 2: 1100°C, for ≤24hr<br />
**Tube 3: 1100°C, for ≤24hr<br />
*'''DRY1050''' may not be run for more than 3hrs. O2 flow is 3SLPM, which is too high to run for more than 3hr without depleting the bottle.<br />
**Contact supervisor for other options, such as '''''DRYVAR''''' @ 1100°C, or with lower O2 flow.<br />
*'''WET1050''' may not be run for more than 24hrs without authorization, due to O2 bottle capacity. Contact supervisor if need to run longer.<br />
*No recipe should be run with >1slpm gas flow without discussing with supervisor first, or gas bottles will be depleted very fast and likely run out during your process.<br />
=== Wafer Cleaning ===<br />
For Tube #2, Silicon wafer cleaning, the following process is recommended:<br />
<br />
# If brand new wafers, they should be already relatively clean. Otherwise Acetone/ISO clean might be needed to remove particles - optional<br />
# Use [[Wet Benches#Wafer Toxic Corrosive Benches|Bay 4 toxic corrosive bench]] to submerge wafers for 20min in PureStrip @ 60°C. Replenish if needed, since PureStrip degrades after a few days at 60°C.<br />
# QDR - rinse.<br />
# Transport to Bay 5 HF bench (keep in water - optional) - use Chemical Transport Container.<br />
# Submerge in HF for 10min.<br />
# Rinse in DI 3x at HF bench. Pure HF goes down special drain, while rinse water can go down normal drain.<br />
# Dry with Nitrogen gun OR SRD "Spin Rinse Dryer" at Bay 5.<br />
# Ready to load into Tystar quartz boats, run recipe on Tystar. <br />
<br />
===Oxidation Recipes (Tystar 8300)===<br />
<br />
==== Calculating Oxidation Times ====<br />
Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.<br />
Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.<br />
<br />
Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy. <br />
<br />
A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator]. <br />
<br />
====1050°C Dry Oxidation====<br />
<br />
*Recipe Name: '''''DRY1050'''''<br />
*Tube #2 for Cleaned Silicon Only<br />
*Tube #3 for processed silicon or other anneals.<br />
<br />
=====Simulation Parameters=====<br />
<br />
*Partial Pressure = 1.12 (best fit to measured data below)<br />
*<100>, 1050°C, 10Å Native Oxide, no dopants<br />
<br />
[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.|none|thumb|300x300px|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]<br />
<br />
====1050°C Wet Oxidation====<br />
<br />
*Recipe Name: '''''WET1050'''''<br />
*Tube #2 for Cleaned Silicon Only<br />
*Tube #3 for processed silicon or other anneals.<br />
<br />
=====Simulation Parameters=====<br />
<br />
*Partial Pressure = 1.09 (best fit to measured data below)<br />
*<100>, 1050°C, 10Å Native Oxide, no dopants<br />
<br />
{|<br />
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]<br />
![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.|none|thumb|300x300px|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]<br />
|}<br />
<br />
====AlGaAs Oxidation====<br />
A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.<br />
<br />
==Wafer Substrate Bonding==<br />
<br />
===Direct Bonding===<br />
Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]] or HeraTherm oven.<br />
<br />
Il addition, the [[Flip-Chip Bonder (Finetech)|Fine-Tech Flip-Chip Bonder]] can perform aligned bonding of various-sized pieces. The Fine-Tech can do metal-to-metal thermo-compression bonding with ultrasonic assist.<br />
<br />
The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)|Goniometer]] allow for surface prep/inspection prior to bonding.<br />
<br />
===Bonding with Intermediate/adhesive layer===<br />
The [[Wafer Bonder (Logitech WBS7)|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax or other intermediate layer, while applying pressure to the top surface to improve uniform wax distribution. Please see the '''''Recipes > Packaging > [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|<u>Logitech Bonder</u>]]''''' page for recipes.<br />
<br />
==[[Tube Furnace AlGaAs Oxidation (Lindberg)]]==<br />
Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.<br />
<br />
Maximum time is about 3 hours before the bubbler water temperature becomes uncontrolled.<br />
<br />
Recipes are available, please ask the NanoFab Process group staff.<br />
<br />
==[[Rapid Thermal Processor (SSI Solaris 150)]]==<br />
[[Category:Processing]]<br />
{{todo|Add starting recipes for RTP}}<br />
<br />
== Rapid Thermal Annealer (AET RTA) ==<br />
{{todo|Add starting recipes for RTA}}</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162914
Thermal Evap 2 (Solder)
2025-03-13T17:12:52Z
<p>Biljana: /* Plot */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
== Plot ==<br />
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png Plot for Indium Deposition]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162913
Thermal Evap 2 (Solder)
2025-03-13T17:12:45Z
<p>Biljana: /* Plot */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
== Plot ==<br />
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png Plot for Indium Deposition]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162912
Thermal Evap 2 (Solder)
2025-03-13T17:12:23Z
<p>Biljana: /* Recipes */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
== Plot ==<br />
* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/Thermal_Evaporator2-Plot.png]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Thermal_Evaporator2-Plot.png&diff=162911
File:Thermal Evaporator2-Plot.png
2025-03-13T17:10:31Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162910
Thermal Evap 2 (Solder)
2025-03-13T17:09:58Z
<p>Biljana: /* Plot */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162909
Thermal Evap 2 (Solder)
2025-03-13T17:06:35Z
<p>Biljana: /* Recipes */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
== Plot == <br />
* [https://docs.google.com/spreadsheets/d/1jbnKn0VP8frUMdv1K0ELFlXWh4EVV_ES0EsH2bTeTzk/edit?gid=1921661747#gid=1921661747|Plot Set vs. Desired Thickness]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162908
Thermal Evap 2 (Solder)
2025-03-13T17:05:25Z
<p>Biljana: /* Documentation */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/d/d1/Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf Using Cold Fixture]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
Plot <br />
* [https://docs.google.com/spreadsheets/d/1jbnKn0VP8frUMdv1K0ELFlXWh4EVV_ES0EsH2bTeTzk/edit?gid=1921661747#gid=1921661747|Plot Set vs. Desired Thickness]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.pdf&diff=162907
File:Thermal Evaprator2-Cold Fixture-Indium Deposition.pdf
2025-03-13T17:04:42Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162906
Thermal Evap 2 (Solder)
2025-03-13T17:03:59Z
<p>Biljana: /* Documentation */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/17/Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf Using Normal Fixture]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
Plot <br />
* [https://docs.google.com/spreadsheets/d/1jbnKn0VP8frUMdv1K0ELFlXWh4EVV_ES0EsH2bTeTzk/edit?gid=1921661747#gid=1921661747|Plot Set vs. Desired Thickness]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.pdf&diff=162905
File:Thermal Evaporator2-Normal Fixture- Indium Deposition.pdf
2025-03-13T17:02:33Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Thermal_Evapoartor_2_Indium_deposition_plot_(1).pdf&diff=162904
File:Thermal Evapoartor 2 Indium deposition plot (1).pdf
2025-03-13T16:59:10Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Wiki-Thermal_Evaporator2-Normal_Fixture-_Indium_Deposition.docx&diff=162903
File:Wiki-Thermal Evaporator2-Normal Fixture- Indium Deposition.docx
2025-03-13T16:58:48Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Wiki-Thermal_Evaprator2-Cold_Fixture-Indium_Deposition.docx&diff=162902
File:Wiki-Thermal Evaprator2-Cold Fixture-Indium Deposition.docx
2025-03-13T16:58:26Z
<p>Biljana: </p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162901
Thermal Evap 2 (Solder)
2025-03-13T16:56:25Z
<p>Biljana: /* Recipes */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
Plot <br />
* [https://docs.google.com/spreadsheets/d/1jbnKn0VP8frUMdv1K0ELFlXWh4EVV_ES0EsH2bTeTzk/edit?gid=1921661747#gid=1921661747|Plot Set vs. Desired Thickness]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=Thermal_Evap_2_(Solder)&diff=162900
Thermal Evap 2 (Solder)
2025-03-13T16:55:49Z
<p>Biljana: /* Recipes */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=Thermal2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = Custom<br />
|materials = <br />
|toolid=12<br />
}}<br />
<br />
== About ==<br />
<br />
Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. See the Recipes section below for other materials used. <br />
<br />
Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.<br />
<br />
== Detailed Specifications ==<br />
Wafers up to 12" can be mounted.<br />
<br />
==Documentation==<br />
*[//wiki.nanotech.ucsb.edu/w/images/b/b3/Thermal_Evaporator2.pdf Operating Instructions]<br />
<br />
== Recipes ==<br />
* [[Thermal Evaporation Recipes#Thermal Evaporator 2|Recipes > Thermal Evaporation Recipes > Thermal Evaporator 2]] <br />
** ''Visit this page for the materials table and evaporation parameters for all materials available.''<br />
Plot <br />
* [https://docs.google.com/spreadsheets/d/1jbnKn0VP8frUMdv1K0ELFlXWh4EVV_ES0EsH2bTeTzk/edit?gid=1921661747#gid=1921661747|Plot > Set vs. Desired Thickness]]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD_2_(Advanced_Vacuum)&diff=162849
PECVD 2 (Advanced Vacuum)
2025-02-21T19:29:11Z
<p>Biljana: /* Documentation */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=PECVD2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|phone=(805)839-7975<br />
|location=Bay 2<br />
|email=silva@ece.ucsb.edu<br />
|description = Vision 310 Advanced Vacuum PECVD<br />
|manufacturer = Plasma-Therm <br />
|materials = <br />
|toolid=15<br />
}} <br />
==About==<br />
<br />
*'''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si''' using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases.<br />
*'''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.<br />
*'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.<br />
*'''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films. <br />
**These films alternate between thin (<10nm) compressive and tensile layers.<br />
**The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]].<br />
<br />
==See Also==<br />
<br />
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]<br />
<br />
==Documentation==<br />
<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*[https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/6/68/PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf Modifying Deposition Time in "STD LS-Si3N4v4" Recipe]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/1b/PECVD2_Recipe_Temperature_Change.pdf Modifying Deposition Temperature]<br />
<br />
*[[Wafer Coating Process Traveler]]<br />
*For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]<br />
<br />
==Recipes & Historical Data==<br />
<br />
*Recipes can be found on the PECVD Recipes Page:<br />
**[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]<br />
**Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4<br />
<br />
*A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:<br />
**[[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]<br />
<br />
===Process Control Data===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD#2: Plots of all data]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 PECVD#2: SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 PECVD#2: Si<sub>3</sub>N<sub>4</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 PECVD#2: Low-Stress Si<sub>3</sub>N<sub>4</sub>] <br />
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Data]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD_2_(Advanced_Vacuum)&diff=162848
PECVD 2 (Advanced Vacuum)
2025-02-21T19:27:49Z
<p>Biljana: /* Documentation */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=PECVD2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|phone=(805)839-7975<br />
|location=Bay 2<br />
|email=silva@ece.ucsb.edu<br />
|description = Vision 310 Advanced Vacuum PECVD<br />
|manufacturer = Plasma-Therm <br />
|materials = <br />
|toolid=15<br />
}} <br />
==About==<br />
<br />
*'''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si''' using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases.<br />
*'''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.<br />
*'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.<br />
*'''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films. <br />
**These films alternate between thin (<10nm) compressive and tensile layers.<br />
**The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]].<br />
<br />
==See Also==<br />
<br />
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]<br />
<br />
==Documentation==<br />
<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*[https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/6/68/PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf Modifying Deposition Time in "STD LS-Si3N4v4" Recipe]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/1b/PECVD2_Recipe_Temperature_Change.pdf Modifying Deposition Temperature]<br />
<br />
*[[Wafer Coating Process Traveler]]<br />
*For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]<br />
<br />
==Recipes & Historical Data==<br />
<br />
*Recipes can be found on the PECVD Recipes Page:<br />
**[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]<br />
**Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4<br />
<br />
*A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:<br />
**[[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]<br />
<br />
===Process Control Data===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD#2: Plots of all data]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 PECVD#2: SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 PECVD#2: Si<sub>3</sub>N<sub>4</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 PECVD#2: Low-Stress Si<sub>3</sub>N<sub>4</sub>] <br />
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Data]</div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:PECVD2_Recipe_Temperature_Change.pdf&diff=162847
File:PECVD2 Recipe Temperature Change.pdf
2025-02-21T19:26:16Z
<p>Biljana: Biljana uploaded a new version of File:PECVD2 Recipe Temperature Change.pdf</p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf&diff=162846
File:PECVD2 STD LS Si3N4v4recipe depositiontime.pdf
2025-02-21T19:25:49Z
<p>Biljana: Biljana uploaded a new version of File:PECVD2 STD LS Si3N4v4recipe depositiontime.pdf</p>
<hr />
<div></div>
Biljana
https://wiki.nanofab.ucsb.edu/w/index.php?title=PECVD_2_(Advanced_Vacuum)&diff=162842
PECVD 2 (Advanced Vacuum)
2025-02-20T19:20:40Z
<p>Biljana: /* Documentation */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=PECVD2.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Don Freeborn<br />
|phone=(805)839-7975<br />
|location=Bay 2<br />
|email=silva@ece.ucsb.edu<br />
|description = Vision 310 Advanced Vacuum PECVD<br />
|manufacturer = Plasma-Therm <br />
|materials = <br />
|toolid=15<br />
}} <br />
==About==<br />
<br />
*'''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si''' using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases.<br />
*'''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.<br />
*'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.<br />
*'''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films. <br />
**These films alternate between thin (<10nm) compressive and tensile layers.<br />
**The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]].<br />
<br />
==See Also==<br />
<br />
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]<br />
<br />
==Documentation==<br />
<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*<br />
*[https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/6/68/PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf Modifying Deposition Time in "STD LS-Si3N4v4" Recipe]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/1b/PECVD2_Recipe_Temperature_Change.pdf Modifying Deposition Temperature]<br />
*[[Wafer Coating Process Traveler]]<br />
*For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]<br />
<br />
==Recipes & Historical Data==<br />
<br />
*Recipes can be found on the PECVD Recipes Page:<br />
**[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]<br />
**Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4<br />
<br />
*A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:<br />
**[[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]<br />
<br />
===Process Control Data===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD#2: Plots of all data]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 PECVD#2: SiO<sub>2</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 PECVD#2: Si<sub>3</sub>N<sub>4</sub>]<br />
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 PECVD#2: Low-Stress Si<sub>3</sub>N<sub>4</sub>] <br />
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Data]</div>
Biljana