Updated SiO2 Rate Table

ICP-PECVD (Unaxis VLR)

2014-03-25T23:44:23Z

Bosch: /* Documentation */

File:Unaxis PM3 Web Operational Procedure 3-25-14.pdf

2014-03-25T23:43:58Z

Bosch:

ICP-PECVD (Unaxis VLR)

2014-03-21T23:43:44Z

Bosch: /* Documentation */

2014-03-18T20:35:31Z

Bosch: /* About */

ICP-PECVD (Unaxis VLR)

2014-03-18T20:22:35Z

Bosch: /* Documentation */

2014-03-17T18:39:09Z

Bosch: /* Documentation */

{{tool|{{PAGENAME}}
|picture=UnaxisPECVD.jpg
|type = Dry Etch
|super= Tony Bosch
|phone=(805)839-3918x217
|location=Bay 1
|email=bosch@ece.ucsb.edu
|description = ?
|manufacturer = Unaxis
|materials =
|toolid=30
}}
= About =

This system is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 200°C operation with back-side He cooling and a clamp to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.

= Detailed Specifications =

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*RT - 200°C sample temperature for etching
*Laser monitoring available
*Cl2, BCl3, Ar, N2, and O2 in etch chamber
*Multiple 4” diameter wafer capable system
*Pieces possible by mounting to 4 ” wafer with thermal compound

=Documentation=
*[[media:http://signupmonkey.ece.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf|Operating Instructions]]

2013-07-11T22:14:20Z

Bosch: /* Documentation */

{{tool|{{PAGENAME}}
|picture=Sputter3.jpg
|type = Vacuum Deposition
|super= Tony Bosch
|phone=(805)839-3918x217
|location=Bay 3
|email=bosch@ece.ucsb.edu
|description = Six-Target DC/RF Magnetron Sputtering System
|manufacturer = [http://www.ajaint.com/ AJA]
|materials =
|toolid=20
}}
=About=
The Six-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 2 RF sources allow for co-deposition of materials, including dedicated magnetic films Fe, Ni, and Co. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O2 or N2 environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s magnetically levitated turbo (capable of pumping O2) achieving an ~ 2 E-7 T ultimate pressure. A VAT adaptive pressure control valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gas, with N2 and O2 used for reactive sputtering. Gun power supplies include: 500W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 50W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results.

=Detailed Specifications=
*6 target with DC or RF operation
*Reactive sputtering with N2 or O2 using RF or DC
*Co-deposition of up to four materials: DC and RF
*Magnetic Material Deposition: Fe, Ni, Co
*SiO2, SiN, ITO, AlN, Al2O3 and other metal-oxide/nitrides possible
*Low E-7 T ultimate pressure (3 mT typical operating pressure), load-locked chamber
*4" diameter sample holder
*Gun Tilt, Sample height and rotation adjustments
*Deposition uniformity is ~ 1-2% over 4 " diameter
*Up to 800°C dep temperature
*RF Biasing of sample during deposition or as a pre-deposition clean

=Documentation=
*[[media:http://Sputter-3 Operation Procedure Wiki.pdf|Operating Procedures]]

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|E-Beam Recipe Page]].

Sputter 3 (AJA ATC 2000-F)

2013-07-11T22:13:21Z

Bosch: /* Documentation */

{{tool|{{PAGENAME}}
|picture=Sputter3.jpg
|type = Vacuum Deposition
|super= Tony Bosch
|phone=(805)839-3918x217
|location=Bay 3
|email=bosch@ece.ucsb.edu
|description = Six-Target DC/RF Magnetron Sputtering System
|manufacturer = [http://www.ajaint.com/ AJA]
|materials =
|toolid=20
}}
=About=
The Six-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 2 RF sources allow for co-deposition of materials, including dedicated magnetic films Fe, Ni, and Co. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O2 or N2 environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s magnetically levitated turbo (capable of pumping O2) achieving an ~ 2 E-7 T ultimate pressure. A VAT adaptive pressure control valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gas, with N2 and O2 used for reactive sputtering. Gun power supplies include: 500W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 50W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results.

=Detailed Specifications=
*6 target with DC or RF operation
*Reactive sputtering with N2 or O2 using RF or DC
*Co-deposition of up to four materials: DC and RF
*Magnetic Material Deposition: Fe, Ni, Co
*SiO2, SiN, ITO, AlN, Al2O3 and other metal-oxide/nitrides possible
*Low E-7 T ultimate pressure (3 mT typical operating pressure), load-locked chamber
*4" diameter sample holder
*Gun Tilt, Sample height and rotation adjustments
*Deposition uniformity is ~ 1-2% over 4 " diameter
*Up to 800°C dep temperature
*RF Biasing of sample during deposition or as a pre-deposition clean

=Documentation=
*[[media:http://Sputter-3_Operation_Procedure_Wiki.pdf|Operating Procedures]]

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|E-Beam Recipe Page]].

File:Sputter-3 Operation Procedure Wiki.pdf

2013-07-11T22:12:12Z

Bosch: Sputter 3 Operation Procedure

Sputter 3 Operation Procedure