UCSB Nanofab Wiki - User contributions [en]

ICP Etch 1 (Panasonic E646V)

2014-04-22T19:43:28Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=ICP2.jpg
|type = Dry Etch
|super= Don Freeborn
|location=Bay 2
|description = ?
|manufacturer = Panasonic Factory Solutions, Japan
|materials =
|toolid=22
}}
= About =

This ICP is a time machine. It can literally take you into the future of nanotechnology. Just look at it. Amazing!

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1250 W ICP power, 600 W RF substrate power, and RT-80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, He, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. The system accepts 6” wafers (JEIDA Std) or pieces mounted to the wafers.

= Detailed Specifications =

*1250 W ICP source, 600 W RF Sample Bias Source in etching chamber
*RT - 80°C sample temperature for etching
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, He, and O2 in etch chamber
*Pieces possible by mounting to 6” wafer
*Load-Locked
*Up to 20 steps per recipe
*Laser monitor with 679.60nm wavelength

=Documentation=
*{{fl|ICP1-Gas-Change-CHF3-AR.pdf|Gas Change Procedure (CHF3 & AR)}}
*{{fl|Gas Change CF4-SF6-CF4.pdf|Gas Change Procedure (CF4 & SF6)}}
*{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}
*{{fl|Changing N2 to He.pdf|Gas Change Procedure (N2 & He)}}

File:Changing N2 to He.pdf

2014-04-22T19:42:50Z

Dfreeborn:

ICP Etch 1 (Panasonic E646V)

2014-04-22T19:41:57Z

Dfreeborn: /* Documentation */

File:XACTI XeF2 Etch Operating Instructions.pdf

2014-04-22T15:49:06Z

Dfreeborn:

XeF2 Etch (Xetch)

2014-04-22T15:48:21Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=XeF2.jpg
|type = Dry Etch
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = XeF2 Gas Etcher
|manufacturer = [http://www.xactix.com/ Xactix Inc]
|materials =
|toolid=31
}}
= About =
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF2 (no plasma enhancement or heating is needed) with the use of photoresist or SiO2 or Al as an etch mask at room temperature. For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab. The XeF2 etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF2 gas and, then, pumped out (to 0.3 Torr). You can also add N2 gas, together with XeF2 gas, into the etch chamber for some applications. There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.

=Documentation=
*[[media:Xactic-XetchX3-System-Manual.pdf|System Manual]]
*[[media:XeF2-Results.pdf|Si Etching Profile & Results]]
*{{file|XACTI XeF2 Etch Operating Instructions.pdf|XACTI XeF2 etch Operating Instructions}}

File:Si Deep RIE Operating Instructions.pdf

2014-04-21T23:04:43Z

Dfreeborn:

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2014-04-21T23:04:08Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}
= About =

The SiRIE system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. This system is dedicated to deep etching in silicon for MEMs structures. The Bosch process is used for obtaining the deep, vertical, high aspect ratio structures. This process cycles between a polymer deposition cycle using C4F8 gas and no substrate bias, and an etching cycle using a SF6 / Ar mixture with substrate bias. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber, such as metal layers on the surface, only if they will remain completely protected from the plasma by an allowed material during the entire etch. Some alternate stop-etch materials may be allowed upon discussion with facility staff.

He back-side cooling is used to keep the sample cool during the etch. This is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. Pieces of wafers can be mounted onto 4" silicon wafers using thin, uniform, bubble-free hard baked photoresist. The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

= Detailed Specifications =

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2 gases available
*He-back-side cooling
*Windows-based computer control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide; other stop-etch materials on request
*Realized etch rates (including passivation steps) of > 3 um / min. Using the standard Plasma Therm recipe, a nominal etch rate of 2 um / min. is achieved; etch rate dependent on conditions and open area

=Documentation=
*{{file|How to restart the software on Si Deep Etch.pdf|How to restart software on Si Deep Etch}}

*{{file|Si Deep RIE Operating Instructions.pdf|Si Deep RIE Operating Instructions}}

= Recipes =
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe]]

RIE 5 (PlasmaTherm)

2014-04-21T19:15:47Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=RIE5.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = RIE #5 Programmable, Loadlocked Chlorine-Based System
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=27
}}
= About =
This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and thin Pt layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO2, and SrF2. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.

Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

= Detailed Specifications =

*Etch gases include: Cl2, BCl3, SiCl4, O2, Ar
*Full computer control or manual computer control
*Low 1 E-7 ultimate chamber pressure
*13.56 Mhz excitation frequency
*Sample chuck He-backside cooled / heated (up to 80°C)
*Typical etch conditions for GaAs:
**10 mT (15 sccm BCl3 / 10 sccm SiCl4)
**100 W, constant power
**60 nm / min. etch rate

=Documentation=
*{{file|How to restart the software on RIE.pdf|How to restart the software on RIE #5}}
*{{file|RIE_-5_operating_instructions.pdf|RIE#5 Operating Instructions}}

File:RIE -5 operating instructions.pdf

2014-04-21T19:12:19Z

Dfreeborn:

File:RIE.pdf

2014-04-21T19:05:44Z

Dfreeborn: Dfreeborn uploaded a new version of "File:RIE.pdf"

File:RIE.pdf

2014-04-21T19:05:25Z

Dfreeborn: Dfreeborn uploaded a new version of "File:RIE.pdf"

File:RIE.pdf

2014-04-21T18:56:39Z

Dfreeborn:

RIE 5 (PlasmaTherm)

2014-04-21T18:55:26Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=RIE5.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = RIE #5 Programmable, Loadlocked Chlorine-Based System
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=27
}}
= About =
This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and thin Pt layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO2, and SrF2. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.

Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

= Detailed Specifications =

*Etch gases include: Cl2, BCl3, SiCl4, O2, Ar
*Full computer control or manual computer control
*Low 1 E-7 ultimate chamber pressure
*13.56 Mhz excitation frequency
*Sample chuck He-backside cooled / heated (up to 80°C)
*Typical etch conditions for GaAs:
**10 mT (15 sccm BCl3 / 10 sccm SiCl4)
**100 W, constant power
**60 nm / min. etch rate

=Documentation=
*{{file|How to restart the software on RIE.pdf|How to restart the software on RIE #5}}
*{{file|RIE #5 Operating Instructions.pdf|RIE#5 Operating Instructions}}

File:How to restart the software on Si Deep Etch.pdf

2014-04-17T18:09:36Z

Dfreeborn:

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2014-04-17T18:09:10Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}
= About =

The SiRIE system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. This system is dedicated to deep etching in silicon for MEMs structures. The Bosch process is used for obtaining the deep, vertical, high aspect ratio structures. This process cycles between a polymer deposition cycle using C4F8 gas and no substrate bias, and an etching cycle using a SF6 / Ar mixture with substrate bias. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber, such as metal layers on the surface, only if they will remain completely protected from the plasma by an allowed material during the entire etch. Some alternate stop-etch materials may be allowed upon discussion with facility staff.

He back-side cooling is used to keep the sample cool during the etch. This is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. Pieces of wafers can be mounted onto 4" silicon wafers using thin, uniform, bubble-free hard baked photoresist. The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

= Detailed Specifications =

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2 gases available
*He-back-side cooling
*Windows-based computer control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide; other stop-etch materials on request
*Realized etch rates (including passivation steps) of > 3 um / min. Using the standard Plasma Therm recipe, a nominal etch rate of 2 um / min. is achieved; etch rate dependent on conditions and open area

=Documentation=
*{{file|How to restart the software on Si Deep Etch.pdf|How to restart software on Si Deep Etch}}

= Recipes =
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe]]

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2014-04-17T18:08:00Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}
= About =

The SiRIE system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. This system is dedicated to deep etching in silicon for MEMs structures. The Bosch process is used for obtaining the deep, vertical, high aspect ratio structures. This process cycles between a polymer deposition cycle using C4F8 gas and no substrate bias, and an etching cycle using a SF6 / Ar mixture with substrate bias. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber, such as metal layers on the surface, only if they will remain completely protected from the plasma by an allowed material during the entire etch. Some alternate stop-etch materials may be allowed upon discussion with facility staff.

He back-side cooling is used to keep the sample cool during the etch. This is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. Pieces of wafers can be mounted onto 4" silicon wafers using thin, uniform, bubble-free hard baked photoresist. The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

= Detailed Specifications =

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2 gases available
*He-back-side cooling
*Windows-based computer control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide; other stop-etch materials on request
*Realized etch rates (including passivation steps) of > 3 um / min. Using the standard Plasma Therm recipe, a nominal etch rate of 2 um / min. is achieved; etch rate dependent on conditions and open area

=Documentation=
*{{file||How to restart software on Si Deep Etch}}

= Recipes =
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe]]

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2014-04-17T18:05:27Z

Dfreeborn:

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}
= About =

The SiRIE system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. This system is dedicated to deep etching in silicon for MEMs structures. The Bosch process is used for obtaining the deep, vertical, high aspect ratio structures. This process cycles between a polymer deposition cycle using C4F8 gas and no substrate bias, and an etching cycle using a SF6 / Ar mixture with substrate bias. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber, such as metal layers on the surface, only if they will remain completely protected from the plasma by an allowed material during the entire etch. Some alternate stop-etch materials may be allowed upon discussion with facility staff.

He back-side cooling is used to keep the sample cool during the etch. This is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. Pieces of wafers can be mounted onto 4" silicon wafers using thin, uniform, bubble-free hard baked photoresist. The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

= Detailed Specifications =

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2 gases available
*He-back-side cooling
*Windows-based computer control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide; other stop-etch materials on request
*Realized etch rates (including passivation steps) of > 3 um / min. Using the standard Plasma Therm recipe, a nominal etch rate of 2 um / min. is achieved; etch rate dependent on conditions and open area

=Documentation=

= Recipes =
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe]]

File:How to restart the software on RIE.pdf

2014-04-17T17:53:33Z

Dfreeborn:

RIE 5 (PlasmaTherm)

2014-04-17T17:53:02Z

Dfreeborn: /* Documentation */

RIE 5 (PlasmaTherm)

2014-04-17T17:31:29Z

Dfreeborn: /* Documentation */

RIE 5 (PlasmaTherm)

2014-04-17T17:24:44Z

Dfreeborn:

RIE 5 (PlasmaTherm)

2014-04-17T17:15:59Z

Dfreeborn: /* About */

{{tool|{{PAGENAME}}
|picture=RIE5.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = RIE #5 Programmable, Loadlocked Chlorine-Based System
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=27
}}
= About =
This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and thin Pt layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO2, and SrF2. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.

Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

= Docmentation =

= Detailed Specifications =

*Etch gases include: Cl2, BCl3, SiCl4, O2, Ar
*Full computer control or manual computer control
*Low 1 E-7 ultimate chamber pressure
*13.56 Mhz excitation frequency
*Sample chuck He-backside cooled / heated (up to 80°C)
*Typical etch conditions for GaAs:
**10 mT (15 sccm BCl3 / 10 sccm SiCl4)
**100 W, constant power
**60 nm / min. etch rate

File:Panasonic 1 instructions.pdf

2014-03-18T18:38:09Z

Dfreeborn:

ICP Etch 1 (Panasonic E646V)

2014-03-18T18:37:46Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=ICP2.jpg
|type = Dry Etch
|super= Don Freeborn
|location=Bay 2
|description = ?
|manufacturer = Panasonic Factory Solutions, Japan
|materials =
|toolid=22
}}
= About =

This ICP is a time machine. It can literally take you into the future of nanotechnology. Just look at it. Amazing!

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1250 W ICP power, 600 W RF substrate power, and RT-80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, He, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. The system accepts 6” wafers (JEIDA Std) or pieces mounted to the wafers.

= Detailed Specifications =

*1250 W ICP source, 600 W RF Sample Bias Source in etching chamber
*RT - 80°C sample temperature for etching
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, He, and O2 in etch chamber
*Pieces possible by mounting to 6” wafer
*Load-Locked
*Up to 20 steps per recipe

=Documentation=
*{{fl|ICP1-Gas-Change-CHF3-AR.pdf|Gas Change Procedure (CHF3 & AR)}}
*{{fl|Gas Change CF4-SF6-CF4.pdf|Gas Change Procedure (CF4 & SF6)}}
*{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}

File:Suss MJB3 SOP1.pdf

2014-03-18T18:30:32Z

Dfreeborn:

Suss Aligners (SUSS MJB-3)

2014-03-18T18:30:06Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=SussAligner.jpg
|type = Lithography
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 6
|email=freeborn@ece.ucsb.edu
|description = Mask Aligner - MJB 3 UV400
|manufacturer = Karl Suss America
|materials =
}}
= About =
We have three high-performance mask aligners for contact exposure processes. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "L", "R" and "IR" units). Our left and IR units are configured for the near-UV window (365 and 405 nm). Using a filter, these two systems can be configured for I-line (350 nm) only, assisting in resolution. All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron. Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Special black chucks may be used for transparent materials. For backside alignment through opaque materials such as Si or GaAs, our IR aligner can be used and is described below. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.

=Detailed Specifications=
*Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
*Substrate size: 3" x 3" max.
*Wafer / substrate thickness: 0-4.5 mm
*Exposure optics:
**Left unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
**Right unit: 350-450 nm/200 W mercury lamp
**IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
*Additional manufacturer options (none installed on our systems):
**DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
**DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
**193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
*Uniformity:
**±3% over 2" diameter
**±5% over 3" diameter
==Aligner with No Filter==
[[image:DUV-Spectra-No-Filter.png|thumb|none|600px|Aligner with No Filter]]
==Aligner with Filter for i-line Exposure==
[[image:DUV-Spectra-With-Filter.png|thumb|none|600px|Aligner with Filter for i-line Exposure]]
=Documentation=
*{{file|Suss MJB3 SOP1.pdf|Suss_MJB3_Standard Operating Instruction1.pdf}}

Suss Aligners (SUSS MJB-3)

2014-03-18T18:28:07Z

Dfreeborn:

Contact Aligner (SUSS MA-6)

2014-03-17T19:36:46Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=ContactAligner.jpg
|type = Lithography
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 7
|email=freeborn@ece.ucsb.edu
|description = Mask Aligner/Bond Aligner (MA/BA-6)
|manufacturer = Karl Suss America
|materials =
|toolid=33
}}
= About =
This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be done with gaps programmable from 0 um to 300 um in 1 um increments. Automatic wedge compensation is used to ensure that the mask and wafer are parallel. Lithography can be done on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. Programs are stored as recipes on the computer controlled unit. The system is fitted with visible, bottom-side optics, back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be done on 3” to 6” wafers. The bond alignment is done with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.

=Detailed Specifications=
*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics
*Automatic Light Intensity Drift Compensation
*Programmable recipes
*Programmable exposure gaps of 0-300 um in 1 um steps
*Stored video imaging for precise, repeatable alignment
*Visible Back-Side Alignment System
*Lithography for 2” to 6” diameter wafers
*Bond alignment for 3” to 6” wafers, integrates with SB6 bond
*Other wafer sizes can be discussed with staff

=Documentation=

*{{file|Suss MA6 SOP1.pdf|Suss_MA6_Standard Operating Instruction1.pdf}}
*{{file|Suss MA6 SOP2.pdf|Suss_MA6_Standard Operating Instruction2.pdf}}
*{{file|Suss MA6 SOP3.pdf|Suss_MA6_Standard Operating Instruction3.pdf}}
*{{file|Suss MA6 SOP4.pdf|Suss_MA6_Standard Operating Instruction4.pdf}}

File:Suss MA6 SOP4.pdf

2014-03-17T19:33:04Z

Dfreeborn:

Contact Aligner (SUSS MA-6)

2014-03-17T19:32:37Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=ContactAligner.jpg
|type = Lithography
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 7
|email=freeborn@ece.ucsb.edu
|description = Mask Aligner/Bond Aligner (MA/BA-6)
|manufacturer = Karl Suss America
|materials =
|toolid=33
}}
= About =
This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be done with gaps programmable from 0 um to 300 um in 1 um increments. Automatic wedge compensation is used to ensure that the mask and wafer are parallel. Lithography can be done on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. Programs are stored as recipes on the computer controlled unit. The system is fitted with visible, bottom-side optics, back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be done on 3” to 6” wafers. The bond alignment is done with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.

=Detailed Specifications=
*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics
*Automatic Light Intensity Drift Compensation
*Programmable recipes
*Programmable exposure gaps of 0-300 um in 1 um steps
*Stored video imaging for precise, repeatable alignment
*Visible Back-Side Alignment System
*Lithography for 2” to 6” diameter wafers
*Bond alignment for 3” to 6” wafers, integrates with SB6 bond
*Other wafer sizes can be discussed with staff

=Documentation=

*{{file|Suss MA6 SOP1.pdf|Suss_MA6_SOP1.pdf}}
*{{file|Suss MA6 SOP2.pdf|Suss_MA6_SOP2.pdf}}
*{{file|Suss MA6 SOP3.pdf|Suss_MA6_SOP3.pdf}}
*{{file|Suss MA6 SOP4.pdf|Suss_MA6_SOP4.pdf}}

File:Suss MA6 SOP3.pdf

2014-03-17T19:28:01Z

Dfreeborn:

Contact Aligner (SUSS MA-6)

2014-03-17T19:27:32Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=ContactAligner.jpg
|type = Lithography
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 7
|email=freeborn@ece.ucsb.edu
|description = Mask Aligner/Bond Aligner (MA/BA-6)
|manufacturer = Karl Suss America
|materials =
|toolid=33
}}
= About =
This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be done with gaps programmable from 0 um to 300 um in 1 um increments. Automatic wedge compensation is used to ensure that the mask and wafer are parallel. Lithography can be done on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. Programs are stored as recipes on the computer controlled unit. The system is fitted with visible, bottom-side optics, back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be done on 3” to 6” wafers. The bond alignment is done with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.

=Detailed Specifications=
*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics
*Automatic Light Intensity Drift Compensation
*Programmable recipes
*Programmable exposure gaps of 0-300 um in 1 um steps
*Stored video imaging for precise, repeatable alignment
*Visible Back-Side Alignment System
*Lithography for 2” to 6” diameter wafers
*Bond alignment for 3” to 6” wafers, integrates with SB6 bond
*Other wafer sizes can be discussed with staff

=Documentation=

*{{file|Suss MA6 SOP1.pdf|Suss_MA6_SOP1.pdf}}
*{{file|Suss MA6 SOP2.pdf|Suss_MA6_SOP2.pdf}}
*{{file|Suss MA6 SOP3.pdf|Suss_MA6_SOP3.pdf}}

File:Suss MA6 SOP2.pdf

2014-03-17T19:23:59Z

Dfreeborn:

Contact Aligner (SUSS MA-6)

2014-03-17T19:18:19Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=ContactAligner.jpg
|type = Lithography
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 7
|email=freeborn@ece.ucsb.edu
|description = Mask Aligner/Bond Aligner (MA/BA-6)
|manufacturer = Karl Suss America
|materials =
|toolid=33
}}
= About =
This system is a dual-use mask aligner and wafer-bond aligner. Mask alignment is used for contact and proximity exposure processes. Exposures can be done with gaps programmable from 0 um to 300 um in 1 um increments. Automatic wedge compensation is used to ensure that the mask and wafer are parallel. Lithography can be done on wafers from 2” to 6” in diameter. Piece parts are better handled on the MJB-3 aligners. An automated image capture system is used for alignment at 5x, 10x, or 20x magnification. Programs are stored as recipes on the computer controlled unit. The system is fitted with visible, bottom-side optics, back-side alignment capability. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades. Bond alignment can be done on 3” to 6” wafers. The bond alignment is done with special fixturing to allow aligned samples to be transferred to the Karl-Suss SB6 system.

=Detailed Specifications=
*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics
*Automatic Light Intensity Drift Compensation
*Programmable recipes
*Programmable exposure gaps of 0-300 um in 1 um steps
*Stored video imaging for precise, repeatable alignment
*Visible Back-Side Alignment System
*Lithography for 2” to 6” diameter wafers
*Bond alignment for 3” to 6” wafers, integrates with SB6 bond
*Other wafer sizes can be discussed with staff

=Documentation=

*{{file|Suss MA6 SOP1.pdf|Suss_MA6_SOP1.pdf}}
*{{file|Suss MA6 SOP2.pdf|Suss_MA6_SOP2.pdf}}

Contact Aligner (SUSS MA-6)

2014-03-17T19:13:56Z

Dfreeborn: /* Documentation */

File:Suss MA6 SOP1.pdf

2014-03-17T19:11:19Z

Dfreeborn:

Contact Aligner (SUSS MA-6)

2014-03-17T19:10:40Z

Dfreeborn: /* Documentation */

Contact Aligner (SUSS MA-6)

2014-03-17T19:01:52Z

Dfreeborn: /* Documentation */

Template:FileSuss MA6 SOP1.pdf

2014-03-17T19:00:24Z

Dfreeborn: Created page with "Suss MA6 SOP1.pdf"

Suss MA6 SOP1.pdf

Contact Aligner (SUSS MA-6)

2014-03-17T18:59:13Z

Dfreeborn: /* Documentation */

Contact Aligner (SUSS MA-6)

2014-03-17T18:57:03Z

Dfreeborn:

E-Beam 3 (Temescal)

2014-03-13T17:34:15Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
= About =

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling and/or rotating the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

= Detailed Specifications =

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Turbo-pumped system with ~ 5e-8 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=
*{{file|E-BEAM-3-OPERATING- INSTRUCTIONS-1.PDF|E-Beam#3 operating instructions}}

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

E-Beam 3 (Temescal)

2014-03-13T17:32:06Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
= About =

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling and/or rotating the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

= Detailed Specifications =

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Turbo-pumped system with ~ 5e-8 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=
*{{file|E-BEAM-3-OPERATING- INSTRUCTIONS-1.PDF}}E-Beam#3 operating instructions-1.pdf

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

File:E-Beam-3 OPERATION INSTRUCTIONS-1.pdf

2014-03-13T17:30:45Z

Dfreeborn:

E-Beam 3 (Temescal)

2014-03-13T17:29:58Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
= About =

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling and/or rotating the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

= Detailed Specifications =

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Turbo-pumped system with ~ 5e-8 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=
*{{file|E-Beam#3 operating instructions-1.pdfE-BEAM-3-OPERATING- INSTRUCTIONS-1.PDF}}E-Beam#3 operating instructions-1.pdf

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

E-Beam 3 (Temescal)

2014-03-13T17:28:43Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
= About =

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling and/or rotating the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

= Detailed Specifications =

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Turbo-pumped system with ~ 5e-8 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=
*{{file|E-BEAM-3-OPERATING- INSTRUCTIONS-1.PDF}}E-Beam#3 operating instructions-1.pdf

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

File:E-BEAM-3-OPERATING- INSTRUCTIONS-1.PDF

2014-03-13T17:23:21Z

Dfreeborn:

E-Beam 3 (Temescal)

2014-03-13T17:22:40Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
= About =

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling and/or rotating the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

= Detailed Specifications =

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Turbo-pumped system with ~ 5e-8 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=
*{{file|E-BEAM-3-OPERATING- INSTRUCTIONS-1.PDF}}

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

File:E-BEAM-OPERATING INSTRUCTIONS.pdf

2014-03-13T17:21:08Z

Dfreeborn:

E-Beam 3 (Temescal)

2014-03-13T17:19:59Z

Dfreeborn: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
= About =

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling and/or rotating the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

= Detailed Specifications =

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Turbo-pumped system with ~ 5e-8 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=
*{{file|E-BEAM-#3-OPERATING- INSTRUCTIONS-1.PDF}}

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].