UCSB Nanofab Wiki - User contributions [en]

DSEIII (PlasmaTherm/Deep Silicon Etcher)

2022-09-14T23:42:36Z

Freeborn d: /* Operation Procedures & Documentation */

{{tool2|{{PAGENAME}}
|picture=DSEIII.jpg
|type = Dry Etch
|super= Aidan Hopkins
|super2= Tony Bosch
|phone= 805-893-3486
|location=Bay 2
|email=bosch@ece.ucsb.edu
|description = Deep Silicon Etcher: Bosch MEMS Processes
|manufacturer = Plasmatherm
|materials =
|toolid=63
}}
==About==

The Si DRIE system is a Plasma-Therm DSEIII series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) and LF (100kHz) supplies to independently control plasma density and ion energy in the system. This system is dedicated to deep silicon Bosch etching, although short O2 etches are also permitted. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed to be exposed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber with staff approval.

Helium back-side cooling is used to keep the sample cool during the etch. Temperature control is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control.

The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber.

==Detailed Specifications==

*3500 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2 gases available
*He-back-side cooling
*100mm wafer held down with ceramic clamp., single-load
**Users must ensure thick photoresists or other substances do not contact the clamp, to prevent wafer stiction and breakage.
*Windows-based Cortex software control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, Al, Al2O3, and polymer films such as photoresist, PMMA, and polyimide; CrystalBond wax for mounting to carrier wafer (ask staff before using oil).
**Realized etch rates (including passivation steps) for Bosch process of >8 um / min. Selectivity to resist > 80:1 for low aspect ratio.
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

==Operation Procedures & Documentation==

*{{file|DSEIII Operating Instructions.pdf}https://wiki.nanotech.ucsb.edu/wiki/File:Running_a_process.pdf
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]

=== Preventing Wafer Breakage ===
It is very important that your wafer does not stick to the top-side clamp in the chamber. The clamp will get hot during long etches, causing thick photoresists to soften and adhere to the clamp, resulting if wafer loss and breakage.

'''Users must remove photoresist from the wafer edge''' to prevent this. We have photolithographic methods for performing this cleanly, or simple swabbing with EBR100 also works well.

See this page for Edge-Bead Removal techniques: [[Photolithography - Manual Edge-Bead Removal Techniques|'''Manual Edge-Bead Removal Techniques''']]

'''Remove at least 7mm around ALL of the outer edge of the 4-inch wafer. Do not try to save die by removing less, or you will lose the whole wafer and require the chamber to be vented.'''

Pieces of wafers can be placed onto 4" silicon wafers, or mounted as long as material does not get on the clamp. It is common for through-silicon etches to use a carrier wafer, often bonded with wax on the [[Wafer Bonder (Logitech WBS7)|Logitech bonder]], and excess wax carefully removed to ensure not adhesion to the clamp.

==Recipes==

*[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29 '''Plasma-Therm DSE-iii Recipes'''] - Recipes specific to this tool.
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.

*Online Training Video:
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=55a26021-b299-41cc-a512-ae23010845aa Plasmatherm DSE-iii Training]
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

File:PT-DSEiii - Running a process.pdf

2022-09-14T23:39:29Z

Freeborn d:

File:Editing a Recipe on Plasma.pdf

2022-09-14T23:37:58Z

Freeborn d: Freeborn d uploaded a new version of File:Editing a Recipe on Plasma.pdf

Chemical-Mechanical Polisher (Logitech)

2022-08-23T20:51:29Z

Freeborn d: /* Instructions */

{{tool|{{PAGENAME}}
|picture=CMP.jpg
|type = Dry Etch
|super= Bill Millerski
|phone=(805)839-3918x216
|location=Bay 5
|email=freeborn@ece.ucsb.edu
|description = ORBIS Chemical Mechanical Polisher
|manufacturer = [http://www.logitech.uk.com/products-solutions/products-and-accessories.aspx Logitech]
|materials =
|toolid=50
}}
=About=
The Logitech Orbis system is used in the facility for fine-scale polishing and planarization of a variety of materials including glass, silicon, GaAs, InP, GaN, etc. Wafers up to 6” diameter can be polished on the system.

Several slurries and pads are available to provide a range of polishing options depending on the material being processed. Pieces can also be handled on the system by wax-mounting with the [[Wafer Bonder (Logitech WBS7)|Logitech Bonder]].

Each process is often unique in geometry and material combinations so that independent process development is required for most CMP applications.

=[[Instructions]]=
https://wiki.nanotech.ucsb.edu/w/images/c/c0/CMP.pdf

Chemical-Mechanical Polisher (Logitech)

2022-08-23T20:18:14Z

Freeborn d: /* Instructions */

Chemical-Mechanical Polisher (Logitech)

2022-08-23T20:15:11Z

Freeborn d: /* Instructions */

Chemical-Mechanical Polisher (Logitech)

2022-08-23T20:12:28Z

Freeborn d: CMP SOP

File:CMP.pdf

2022-08-23T20:00:34Z

Freeborn d: CMP SOP

== Summary ==
CMP SOP

E-Beam 3 (Temescal)

2022-01-26T23:54:23Z

Freeborn d: /* Documentation */

E-Beam 3 (Temescal)

2022-01-26T23:47:47Z

Freeborn d: /* Documentation */

File:EB -3 OPERATING INSTRUCTIONS docx.pdf

2022-01-26T23:44:41Z

Freeborn d: Freeborn d uploaded a new version of File:EB -3 OPERATING INSTRUCTIONS docx.pdf

File:EB -3 OPERATING INSTRUCTIONS docx.pdf

2022-01-06T18:48:16Z

Freeborn d:

E-Beam 3 (Temescal)

2022-01-06T18:47:29Z

Freeborn d: /* Documentation */

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2021-11-30T17:44:37Z

Freeborn d: Uploaded PDF.

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Tony Bosch
|phone= 805-893-3486
|location=Bay 2
|email=bosch@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}

=About=

The system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. Helium back-side cooling is available to keep the sample cool during the etch. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user.

The system is generally meant for any fluorine-containing etch, which is typically for etching materials like SiO2, Si3N4, Silicon, or other materials with voltalee fluoride etch products.

The fixturing is configured for 4" diameter Si wafers and uses a cermaic clamp on the outer ~5mm of the 100mm wafer to hold the sample on the RF chuck.

Smaller samples can be mounted onto 100mm carrier wafers, either with no adhesive (sample temperature will be higher), or with Santovac oil for better thermal cooling. However, great care must be taken to ensure no oil, photoresist or small pieces are placed on the outer 5mm of the carrier wafer, as the ceramic clamp will physically press on this out region, potentially causing stiction or breakage if foreign or sticky substances are in those regions.

The in-situ [[Laser Etch Monitoring|laser monitor]] installed on the chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber.

=Detailed Specifications=

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2, CHF3, CF4 gases available
*He-back-side cooling
*Single 100mm/4-inch wafer handling with physical topside clamp, contacting outer 5mm of wafer.
**Small samples may be mounted with oil or no adhesive, but must be far away from this 5mm edge exclusion zone.
**No photoresist or oil is allowed to contact the clamp, or wafers will get stuck and possibly break in the chamber.
*Windows-based computer control of process and wafer handling
*[[Laser Etch Monitoring|Laser endpoint monitoring]] with camera and simulation software, for repeatable etching - see: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

=Documentation=

*{{file|Running_a_process_on_Plasma_Therm_SLR.pdf|Fluorine Etcher Operating Instructions (Cortex Software)}}

*{{file|How to restart the software on Si Deep Etch.pdf|How to restart software on Plasma-Therm Cortex Software}}
*[[Laser Etch Monitoring|Laser Monitor procedures]]
*[https://wiki.nanotech.ucsb.edu/w/images/6/65/Editing_a_Recipe_on_Plasma.pdf How to edit recipe]
*[https://wiki.nanotech.ucsb.edu/w/images/6/69/Cleaning_Rules_for_Fluorine_ICP_Etch_tool.pdf Cleaning rules]

=Recipes=

*Recipes > [[Dry Etching Recipes|Dry Etching]] > [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher '''PlasmaTherm/SLR Fluorine Etcher''']
**Starting point recipes for the FL-ICP, including SiO2 and Si etches.
**''Historical Data'' records "calibration" etches to test tool performance.
*You can see a full list of all tools and all materials able to be etched by each on our [[Dry Etching Recipes|Dry Etching Recipes Table]].

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2021-11-30T17:00:29Z

Freeborn d: Uploaded a PDF

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Tony Bosch
|phone= 805-893-3486
|location=Bay 2
|email=bosch@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}

=About=

The system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. Helium back-side cooling is available to keep the sample cool during the etch. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user.

The system is generally meant for any fluorine-containing etch, which is typically for etching materials like SiO2, Si3N4, Silicon, or other materials with voltalee fluoride etch products.

The fixturing is configured for 4" diameter Si wafers and uses a cermaic clamp on the outer ~5mm of the 100mm wafer to hold the sample on the RF chuck.

Smaller samples can be mounted onto 100mm carrier wafers, either with no adhesive (sample temperature will be higher), or with Santovac oil for better thermal cooling. However, great care must be taken to ensure no oil, photoresist or small pieces are placed on the outer 5mm of the carrier wafer, as the ceramic clamp will physically press on this out region, potentially causing stiction or breakage if foreign or sticky substances are in those regions.

The in-situ [[Laser Etch Monitoring|laser monitor]] installed on the chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber.

=Detailed Specifications=

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2, CHF3, CF4 gases available
*He-back-side cooling
*Single 100mm/4-inch wafer handling with physical topside clamp, contacting outer 5mm of wafer.
**Small samples may be mounted with oil or no adhesive, but must be far away from this 5mm edge exclusion zone.
**No photoresist or oil is allowed to contact the clamp, or wafers will get stuck and possibly break in the chamber.
*Windows-based computer control of process and wafer handling
*[[Laser Etch Monitoring|Laser endpoint monitoring]] with camera and simulation software, for repeatable etching - see: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

=Documentation=

*{{file|Running_a_process_on_Plasma_Therm_SLR.pdf|Fluorine Etcher Operating Instructions (Cortex Software)}}

*{{file|How to restart the software on Si Deep Etch.pdf|How to restart software on Plasma-Therm Cortex Software}}
*[[Laser Etch Monitoring|Laser Monitor procedures]]
*[https://wiki.nanotech.ucsb.edu/w/images/6/65/Editing_a_Recipe_on_Plasma.pdf How to edit recipe]
*Cleaning rules

=Recipes=

*Recipes > [[Dry Etching Recipes|Dry Etching]] > [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher '''PlasmaTherm/SLR Fluorine Etcher''']
**Starting point recipes for the FL-ICP, including SiO2 and Si etches.
**''Historical Data'' records "calibration" etches to test tool performance.
*You can see a full list of all tools and all materials able to be etched by each on our [[Dry Etching Recipes|Dry Etching Recipes Table]].

File:Cleaning Rules for Fluorine ICP Etch tool.pdf

2021-11-30T16:57:55Z

Freeborn d:

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2021-11-30T16:53:37Z

Freeborn d: Added PDF doc.

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Tony Bosch
|phone= 805-893-3486
|location=Bay 2
|email=bosch@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}

=About=

The system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. Helium back-side cooling is available to keep the sample cool during the etch. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user.

The system is generally meant for any fluorine-containing etch, which is typically for etching materials like SiO2, Si3N4, Silicon, or other materials with voltalee fluoride etch products.

The fixturing is configured for 4" diameter Si wafers and uses a cermaic clamp on the outer ~5mm of the 100mm wafer to hold the sample on the RF chuck.

Smaller samples can be mounted onto 100mm carrier wafers, either with no adhesive (sample temperature will be higher), or with Santovac oil for better thermal cooling. However, great care must be taken to ensure no oil, photoresist or small pieces are placed on the outer 5mm of the carrier wafer, as the ceramic clamp will physically press on this out region, potentially causing stiction or breakage if foreign or sticky substances are in those regions.

The in-situ [[Laser Etch Monitoring|laser monitor]] installed on the chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber.

=Detailed Specifications=

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2, CHF3, CF4 gases available
*He-back-side cooling
*Single 100mm/4-inch wafer handling with physical topside clamp, contacting outer 5mm of wafer.
**Small samples may be mounted with oil or no adhesive, but must be far away from this 5mm edge exclusion zone.
**No photoresist or oil is allowed to contact the clamp, or wafers will get stuck and possibly break in the chamber.
*Windows-based computer control of process and wafer handling
*[[Laser Etch Monitoring|Laser endpoint monitoring]] with camera and simulation software, for repeatable etching - see: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

=Documentation=

*{{file|Running_a_process_on_Plasma_Therm_SLR.pdf|Fluorine Etcher Operating Instructions (Cortex Software)}}

*{{file|How to restart the software on Si Deep Etch.pdf|How to restart software on Plasma-Therm Cortex Software}}
*[[Laser Etch Monitoring|Laser Monitor procedures]]
*[https://wiki.nanotech.ucsb.edu/w/images/6/65/Editing_a_Recipe_on_Plasma.pdf How to edit recipe]

=Recipes=

*Recipes > [[Dry Etching Recipes|Dry Etching]] > [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher '''PlasmaTherm/SLR Fluorine Etcher''']
**Starting point recipes for the FL-ICP, including SiO2 and Si etches.
**''Historical Data'' records "calibration" etches to test tool performance.
*You can see a full list of all tools and all materials able to be etched by each on our [[Dry Etching Recipes|Dry Etching Recipes Table]].

File:Editing a Recipe on Plasma.pdf

2021-11-30T16:51:06Z

Freeborn d:

E-Beam 1 (Sharon)

2020-03-23T21:15:29Z

Freeborn d: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
= About =

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

= Materials Table =
For the materials tables and deposition parameters for various materials, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|E-Beam Recipe Page]].

= Detailed Specifications =
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Varian, Model SD700, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=[[Documentation]]=
*[https://wiki.nanotech.ucsb.edu/w/images/b/be/EB-1_operation_instructions.pdf Operating Instructions]

E-Beam 1 (Sharon)

2020-03-23T20:55:18Z

Freeborn d: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
= About =

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

= Materials Table =
For the materials tables and deposition parameters for various materials, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|E-Beam Recipe Page]].

= Detailed Specifications =
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Varian, Model SD700, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=[[Documentation]]=
*[//wiki.nanotech.ucsb.edu/w/images/4/42/New_Operating_Instructions_Ebeam.pdf Operating Instructions]

E-Beam 1 (Sharon)

2020-03-23T20:49:28Z

Freeborn d: Undo revision 157330 by Freeborn d (talk)

{{tool|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
= About =

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

= Materials Table =
For the materials tables and deposition parameters for various materials, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|E-Beam Recipe Page]].

= Detailed Specifications =
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Varian, Model SD700, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=
*[//wiki.nanotech.ucsb.edu/w/images/4/42/New_Operating_Instructions_Ebeam.pdf Operating Instructions]

E-Beam 1 (Sharon)

2020-03-23T20:42:21Z

Freeborn d: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
= About =

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

= Materials Table =
For the materials tables and deposition parameters for various materials, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|E-Beam Recipe Page]].

= Detailed Specifications =
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Varian, Model SD700, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=
*[//wiki.nanotech.ucsb.edu/w/images/4/42/EB-1_operation_instructions.pdf]

File:EB-1 operation instructions.pdf

2020-03-23T20:01:45Z

Freeborn d: EB#1 operation instructions

== Summary ==
EB#1 operation instructions

File:Ebeam 1 operating instructions.pdf

2020-03-23T19:30:32Z

Freeborn d: New operating instructions.

== Summary ==
New operating instructions.

Don Freeborn

2020-03-21T02:19:07Z

Freeborn d: Changed e-mail and ph number.

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109B
|phone = (805) 839-7975
|cell =
|email = dfreeborn@ucsb.edu
}}

=About=

Current Work

=Current Work=
Tools

=Tools=
{{PAGENAME}} is in charge of the following tools:
{|
|- valign="top"
|
*
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma Therm DSE-iii(Plasma-Therm/Deep Silicon Etcher)]]
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[E-Beam 3 (Temescal)]]
||
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP]]
*[[ICP Etch 1 (Panasonic E626I)]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
|}

PECVD 1 (PlasmaTherm 790)

2020-03-21T02:15:17Z

Freeborn d: Changed tool supervisor.

{{tool|{{PAGENAME}}
|picture=PECVD1.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=16
}} __TOC__
= About =

This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition. CF4/O2 plasmas are used to clean the chamber between depositions.

These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.

= Detailed Specifications =

*Gases used: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
*~ 10mT ultimate chamber pressure
*13.56 Mhz excitation freq.
*Sample size: pieces to 6” wafers
*Automatic tuning network
*RF Power control
*Full computer operation
*Standard recipes for a variety of film thicknesses

=Documentation=
*[//wiki.nanotech.ucsb.edu/w/images/d/d2/PECVD1_Operating_Instructions.pdf Operating Instuctions]

Thermal Evap 1

2020-03-21T01:56:29Z

Freeborn d: Changed tool supervisor.

{{tool|{{PAGENAME}}
|picture=Thermal1.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ucsb.edu
|description = NRC 3117 Three Source Thermal Evaporator
|manufacturer = ??
|materials =
|toolid=11
}}
= About =
This system is the primary thermal evaporator (tungsten strip or wire resistance heater source boats) in the cleanroom. It complements and augments offered by the Sharon e-beam system in that p-type contacts for III-V compounds such as Zn may only be done here, but it allows for easier access and depositions without the risk of radiation damage for many of the same materials as the e-beam. The system has been upgraded over the years from its original diffusion pump design to now include a cryopump and custom-built electronics for turn-key pumpdown and venting operations. Typically source materials are melted in "dimpled" flat tungsten boats. These include: Al, Ag, Au, Au/Ge, Au/Pd, Au/Zn, Cr, Mn, Ni, SiO and Zn. Cr is evaporated (sublimed) from a pre-coated rod and SiO from a special baffle heater, both available from R.D Mathis Co. Evaporation rates are manually controlled by varying the output voltage of a variac which feed various transformer taps (and feedthroughs) allowing for currents up to 200 amps. Although the unit heater boat selector can theoretically accommodate up to four units, present fixturing only allows for three, which are heated sequentially. Rates are monitored with a standard 6 mHz crystal oscillator. Samples typically are piece parts or quarters of 2 inch wafers, and are clipped onto a removable metal plate which sits at approximate 12 inches from the sources. At present 2 inch wafers would be the maximum sample size for 100% coverage. The substrate rotation fixture from the Sharon system can also be used. Substrate heating is possible with user supplied heater assemblies. Deposition cycling time from pumpdown to deposition to system venting is two hours, the same as the e-beam systems.

=Detailed Specifications=
*Standard 18" bell jar pumped by 8" Varian cryopump (HV8) driven by Ebara 2.1 compressor
*Low E-7 Torr ultimate pressure
*Rate Monitor: Maxtek TM-300
*Typical material rates: Al - 1 A/s @ 85 amps
**Au - 5 A/s @ 122 amps
**Cr - 2 A/s @ 85 amps
**Zn - 4.5 A/s @ 50 amps

= Materials Table =
For the materials tables, please visit the [[Thermal_Evaporation_Recipes#Materials_Table_(Thermal Evaporator #1)|Thermal Evaporation Recipe Page]].

=Documentation=
*{{file|ThermalEvapInstruction.pdf|Standard Operation Instructions}}

E-Beam 1 (Sharon)

2020-03-21T01:53:50Z

Freeborn d: Changed tool supervisor.

{{tool|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
= About =

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

= Materials Table =
For the materials tables and deposition parameters for various materials, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|E-Beam Recipe Page]].

= Detailed Specifications =
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Varian, Model SD700, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

=Documentation=
*[//wiki.nanotech.ucsb.edu/w/images/4/42/New_Operating_Instructions_Ebeam.pdf Operating Instructions]

E-Beam 4 (CHA)

2020-03-21T01:51:57Z

Freeborn d: Changed tool supervisor.

{{tool|{{PAGENAME}}
|picture=e-beam4.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Multi-Wafer Evaporator
|manufacturer = CHA Industries
|model = SEC-600-RAP
|materials =
|toolid=10
}}
= About =
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

= Detailed Specifications =
*Temescal 10kV power supply
*1-Temescal 8-pocket series 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Automatic vacuum sequencing
*Temescal e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Sample size: Pieces or up to 10-4” wafers for lift-off and 24-4” wafers for sidewall coverage
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

=Documentation=
*[//wiki.nanotech.ucsb.edu/w/images/8/8b/Wiki_Operational_Procedure_EB4_With_EBC_Rev_3.pdf Operating Procedures]

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)|E-Beam Recipe Page]].

File:Running a process on Plasma Therm SLR.pdf

2019-07-19T17:23:24Z

Freeborn d:

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2019-06-13T23:26:26Z

Freeborn d: /* Documentation */

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}

= About =

The system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber, such as metal layers on the surface, only if they will remain completely protected from the plasma by an allowed material during the entire etch. Some alternate stop-etch materials may be allowed upon discussion with facility staff.

Helium back-side cooling is used to keep the sample cool during the etch. Temperature control is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. Pieces of wafers can be mounted onto 4" silicon wafers using thin, uniform, bubble-free hard baked photoresist. The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

= Detailed Specifications =

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2, CHF3, CF4 gases available
*He-back-side cooling
*Windows-based computer control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide; other stop-etch materials on request
*Realized etch rates (including passivation steps) of > 3 µm / min. Using the standard Plasma Therm recipe, a nominal etch rate of 2 um / min. is achieved; etch rate dependent on conditions and open area
*Laser monitoring with camera and etch simulation software for stopping etch within partially-etched layers - Intellemetrics

=Documentation=
*{{file|Fluorine |Si Deep RIE Operating Instructions}}

*{{file|How to restart the software on Si Deep Etch.pdf|How to restart software on Si Deep Etch}}

= Recipes =
Etch recipes can be found on the following page: [https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher Dry Etching Recipes > PlasmaThemr/SLR Fluorine Etcher]

You can see a full list of all tools and all materials able to be etched by each on our [[Dry Etching Recipes|Dry Etching Recipes Table]].

Don Freeborn

2019-02-25T22:26:47Z

Freeborn d: Added links.

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109C
|phone = (805) 839-3918x216
|cell =
|email = dfreeborn@ece.ucsb.edu
}}

=About=

Current Work

=Current Work=
Tools

=Tools=
{{PAGENAME}}
is in charge of the following tools:
{|
|- valign="top"
|
*
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma Therm DSE-iii(Plasma-Therm/Deep Silicon Etcher)]]
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[E-Beam 3 (Temescal)]]
||
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP]]
*[[ICP Etch 1 (Panasonic E626I)]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
|}

Don Freeborn

2019-02-25T22:19:54Z

Freeborn d: Linked the Fluorine etch page.

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109C
|phone = (805) 839-3918x216
|cell =
|email = dfreeborn@ece.ucsb.edu
}}

=About=

Current Work

Lorem ipsum dolor sit amet, consectetur adipiscing elit. Aenean aliquam sapien mattis urna tempus eu malesuada neque consectetur. Nulla molestie turpis eget felis interdum nec ullamcorper elit gravida. Donec tincidunt odio et neque feugiat et imperdiet neque congue. Suspendisse pretium pulvinar mi, a t

=Current Work=
Tools

=Tools=
{{PAGENAME}}
is in charge of the following tools:
{|
|- valign="top"
|
*
*Plasma Therm DSE-iii(Plasma-Therm/Deep Silicon Etcher)
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[E-Beam 3 (Temescal)]]
||
*[[Plasma-Therm SLR: Fluorine ICP]]
*[[ICP Etch 1 (Panasonic E626I)]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
|}

Don Freeborn

2019-02-25T22:08:50Z

Freeborn d: Changed list.

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109C
|phone = (805) 839-3918x216
|cell =
|email = dfreeborn@ece.ucsb.edu
}}

=About=

Lorem ipsum dolor sit amet, consectetur adipiscing elit. Aenean aliquam sapien mattis urna tempus eu malesuada neque consectetur. Nulla molestie turpis eget felis interdum nec ullamcorper elit gravida. Donec tincidunt odio et neque feugiat et imperdiet neque congue. Suspendisse pretium pulvinar mi, a tincidunt lorem suscipit nec. Vivamus condimentum massa ac enim lobortis dignissim pellentesque turpis fermentum. Fusce ac neque ultricies nisi placerat adipiscing. Duis tristique feugiat feugiat. Quisque nec facilisis nisl.

=Current Work=
Nullam auctor ligula vel tortor luctus porttitor quis vitae arcu. Mauris venenatis tincidunt leo, vel vehicula lacus ornare in. Suspendisse blandit egestas lectus, sed hendrerit metus condimentum sed. Etiam adipiscing sagittis mattis. Class aptent taciti sociosqu ad litora torquent per conubia nostra, per inceptos himenaeos. Phasellus eu velit justo, nec semper lacus. Sed a quam orci. Maecenas in semper tortor. Etiam ac nunc dui, in laoreet est. Fusce erat nisl, pellentesque iaculis cursus et, sollicitudin a quam. Mauris quis ligula vel enim viverra eleifend. Sed cursus commodo sodales. Nullam dictum odio in augue pharetra placerat. Sed ligula quam, laoreet id sodales at, lacinia a ligula.

=Tools=
{{PAGENAME}}
is in charge of the following tools:
{|
|- valign="top"
|
*
*Plasma Therm DSE-iii(Plasma-Therm/Deep Silicon Etcher)
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[E-Beam 3 (Temescal)]]
||
*Plasma-Therm SLR: Fluorine ICP
*[[ICP Etch 1 (Panasonic E626I)]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
|}

Wafer Bonder (Logitech WBS7)

2019-01-29T20:00:54Z

Freeborn d: /* Operation Procedures */

{{tool|{{PAGENAME}}
|picture=Logitech_WBS7_Bonder_Schematic_from_Manual.png
|type = Thermal Processing
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 5
|email=freeborn@ece.ucsb.edu
|description = Wafer Bonder WSB7
|manufacturer = Logitech
}}
== About ==

This tool is most often used for bonding samples to Silicon carrier wafers with CrystalBond wax. This can be used for through-etching of the sample wafer, for dicing, or sometimes for lithography.

A user can place the two wafers to be bonded in contact, with the adhesive in between (such as wax, photoresist etc.). A rubber membrane is lowered on top, creating a small vacuum chamber. The tool can then be programmed to heat the wafers and melt the wax/cure the adhesive, while vacuum is pulled in the chamber, which pulls the rubber membrane down onto the top wafer. This flattens the bond and evacuates bubbles from between the wafers, providing a planar bond.

We also have recipes for spin-coating the crystalbond wax, allowing for a uniform coating of the adhesive wax.
==Detailed Specifications==
* Substrate Size: 4"-6"
* Temperature Range: 20c-188c

==Operation Procedures==

== Recipes ==
* Recipes > Packaging Recipes > [https://www.nanotech.ucsb.edu/wiki/index.php/Packaging_Recipes#Wafer_Bonder_.28Logitech_WBS7.29 Wafer Bonder (Logitech WBS7)]

Wafer Bonder (SUSS SB6-8E)

2019-01-29T15:51:49Z

Freeborn d: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=WaferBonder.jpg
|type = Thermal Processing
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 7
|email=freeborn@ece.ucsb.edu
|description = Karl Suss Substrate Bonder
|manufacturer = Karl Suss America
|materials =
|toolid=41
}}
= About =
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.

=Detailed Specifications=
*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity
*Upper and lower heating of samples
*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen
*Sample size: pieces to 6” wafers, aligned bonding by using MA/BA-6 aligner
*Anodic bonding to 2000 V
*Windows-based computer control
*Wafer bonder currently set up for 4" wafers

E-Beam 3 (Temescal)

2018-11-07T22:24:05Z

Freeborn d: /* About */ Removed the word rotated.

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2018-09-10T23:20:46Z

Freeborn d: Removed reference to the Bosch process.

'''Note: This page needs to updated''' - it is still showing old information from before it was converted to a Fluorine etcher. It is not a Silicon Bosch Etcher any more.

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}

= About =

The system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber, such as metal layers on the surface, only if they will remain completely protected from the plasma by an allowed material during the entire etch. Some alternate stop-etch materials may be allowed upon discussion with facility staff.

Helium back-side cooling is used to keep the sample cool during the etch. Temperature control is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. Pieces of wafers can be mounted onto 4" silicon wafers using thin, uniform, bubble-free hard baked photoresist. The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

= Detailed Specifications =

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2, CHF3, Cf4 gases available
*He-back-side cooling
*Windows-based computer control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide; other stop-etch materials on request
*Realized etch rates (including passivation steps) of > 3 um / min. Using the standard Plasma Therm recipe, a nominal etch rate of 2 um / min. is achieved; etch rate dependent on conditions and open area
*Laser monitoring with camera and etch simulation software for SOI etching - Intellemetrics

=Documentation=
*{{file|Si Deep RIE Operating Instructions.pdf|Si Deep RIE Operating Instructions}}

*{{file|How to restart the software on Si Deep Etch.pdf|How to restart software on Si Deep Etch}}

= Recipes =
Etch recipes can be found on the following page: [[ICP_Etching_Recipes#Si_Deep_RIE_.28PlasmaTherm.2FBosch_Etch.29 | Dry Etching Recipes > Si Deep RIE (PlasmaTherm/Bosch Etch)]]

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2018-09-10T23:15:14Z

Freeborn d: Added gases.

'''Note: This page needs to updated''' - it is still showing old information from before it was converted to a Fluorine etcher. It is not a Silicon Bosch Etcher any more.

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}

= About =

The Si DRIE system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. This system is dedicated to deep etching in silicon for MEMs structures. The Bosch process is used for obtaining deep, vertical, high aspect ratio structures. This process cycles between a polymer deposition cycle using C4F8 gas and no substrate bias, and an etching cycle using a SF6 / Ar mixture with substrate bias. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber, such as metal layers on the surface, only if they will remain completely protected from the plasma by an allowed material during the entire etch. Some alternate stop-etch materials may be allowed upon discussion with facility staff.

Helium back-side cooling is used to keep the sample cool during the etch. Temperature control is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. Pieces of wafers can be mounted onto 4" silicon wafers using thin, uniform, bubble-free hard baked photoresist. The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

= Detailed Specifications =

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2, CHF3, Cf4 gases available
*He-back-side cooling
*Windows-based computer control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide; other stop-etch materials on request
*Realized etch rates (including passivation steps) of > 3 um / min. Using the standard Plasma Therm recipe, a nominal etch rate of 2 um / min. is achieved; etch rate dependent on conditions and open area
*Laser monitoring with camera and etch simulation software for SOI etching - Intellemetrics

=Documentation=
*{{file|Si Deep RIE Operating Instructions.pdf|Si Deep RIE Operating Instructions}}

*{{file|How to restart the software on Si Deep Etch.pdf|How to restart software on Si Deep Etch}}

= Recipes =
Etch recipes can be found on the following page: [[ICP_Etching_Recipes#Si_Deep_RIE_.28PlasmaTherm.2FBosch_Etch.29 | Dry Etching Recipes > Si Deep RIE (PlasmaTherm/Bosch Etch)]]

E-BEAM

2014-03-13T15:53:41Z

Freeborn d:

*[[:E-BEAM #3 OPERATING INSTRUCTIONS-1.pdf]]

E-Beam 3 (Temescal)

2014-03-13T15:52:55Z

Freeborn d: /* Documentation */

E-BEAM

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*[[:E-BEAM #3 OPERATING INSTRUCTIONS-1.pdft]]

E-BEAM

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*[[:E-BEAM #3OPERATING INSTRUCTIONS-1.pdft]]

E-BEAM

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[[File:E-BEAM #3OPERATING INSTRUCTIONS-1.pdft]]
E-‐BEAM #3 OPERATING INSTRUCTIONS
1. Push VENT TO LOAD/ UNLOAD button on the load lock controller. If the load lock does not vent after 1 min. press the STOP button and then the RESET button on the IC/5 deposition controller.
2. Slide sample holder out of load lock. Clip your sample on the sample holder and slide back into the load lock. Push the PUMP TO DEPOSIT button on the load lock controller. The controller will pump and then lower your sample into the process chamber.
3. Press I/G [ion gauge] button on the vacuum gauge controller. Wait until the pressure is at 3.00e-‐10-‐6mt.
4. Program the IC/5 deposition controller for the correct thickness and rate of the desired material. Press F6 PROGRAM, then F2 PROCESS DIRECTORY. Use the arrow keys to enter your final thickness and rate, press E too enter. Press F6 PROCESS DIRECTORY, next press F6 PROGRAM, next press F6 OPERATE and then F1 ZERO THICKNESS. The IC/5 should show READY and the chosen program on the screen.
5. Rotate the hearth to your chosen source with the Turret Source Selector thumb wheel. When it is in the correct position, the indicator number will light.
6. Verify that the Shutter Controller is in the AUTO position.
7. Energize the gun filament by switching the main breaker switch on the CV-‐
6SXL power supply. Turn the key switch to ON. Press the HV CONTROL white ON button. If the yellow fault light is “ on “press the green OFF button then the white ON button. [Should show 9.98 or 10.0 KV]. Press the GUN CONTROL white ON button [Should show 00.0 at idle].
8. Press START button on the IC/5. As the power ramps up use the shuttered port on the front of the tool for Gun #1 or the camera for Gun #2 to verify that the beam is hitting the source. Use the beam sweep controller to focus the beam if needed. Once the shutter opens [The shutter light will come on] you can see the Gun#1 source thru the front viewport and the Gun #2 source with the camera. If you need to adjust the beam during the deposition do it slowly. If “pits” or “holes” are melted into the source, slowly move the beam around the edges of the hole, and let the melt flow back in and fill it.
9. The shutter will close and the gun will shut down automatically when your final thickness is reached.
10. Press the GUN CONTROL OFF button. Press the HV CONTROL OFF button. Turn the HV key OFF. Switch the main breaker on the CV-‐6SXL power supply OFF.
11. Push VENT TO LOAD/UNLOAD button on the load lock controller. The sample holder will return to the load lock and vent the load lock. Remove your sample.
12. Push PUMP TO STANDBY on the load lock controller.
13. Fill out the tool log.

E-Beam 3 (Temescal)

2014-03-13T15:41:16Z

Freeborn d: /* Documentation */

E-Beam 3 (Temescal)

2014-03-13T15:32:11Z

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File:Documentations.pdf

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Freeborn d: Freeborn d uploaded a new version of "File:Documentations.pdf"

E-Beam 3 (Temescal)

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Freeborn d: /* Documentation */

E-Beam 3 (Temescal)

2014-03-13T15:12:48Z

Freeborn d: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam3.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Load Locked Metal Evaporator Dual Gun
|manufacturer = Temescal
|materials =
|toolid=9
}}
= About =

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling and/or rotating the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

= Detailed Specifications =

*Temescal CV-6S 10kV power supply
*2-Temescal 4-pocket series 260 e-beam sources
*Turbo-pumped system with ~ 5e-8 ultimate base pressure
*Load-lock for quick turn-around
*Automatic vacuum sequencing

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge

=Documentation=
E-‐BEAM #3 OPERATING INSTRUCTIONS
1. Push VENT TO LOAD/ UNLOAD button on the load lock controller. If the load lock does not vent after 1 min. press the STOP button and then the RESET button on the IC/5 deposition controller.
2. Slide sample holder out of load lock. Clip your sample on the sample holder and slide back into the load lock. Push the PUMP TO DEPOSIT button on the load lock controller. The controller will pump and then lower your sample into the process chamber.
3. Press I/G [ion gauge] button on the vacuum gauge controller. Wait until the pressure is at 3.00e-‐10-‐6mt.
4. Program the IC/5 deposition controller for the correct thickness and rate of the desired material. Press F6 PROGRAM, then F2 PROCESS DIRECTORY. Use the arrow keys to enter your final thickness and rate, press E too enter. Press F6 PROCESS DIRECTORY, next press F6 PROGRAM, next press F6 OPERATE and then F1 ZERO THICKNESS. The IC/5 should show READY and the chosen program on the screen.
5. Rotate the hearth to your chosen source with the Turret Source Selector thumb wheel. When it is in the correct position, the indicator number will light.
6. Verify that the Shutter Controller is in the AUTO position.
7. Energize the gun filament by switching the main breaker switch on the CV-‐
6SXL power supply. Turn the key switch to ON. Press the HV CONTROL white ON button. If the yellow fault light is “ on “press the green OFF button then the white ON button. [Should show 9.98 or 10.0 KV]. Press the GUN CONTROL white ON button [Should show 00.0 at idle].
8. Press START button on the IC/5. As the power ramps up use the shuttered port on the front of the tool for Gun #1 or the camera for Gun #2 to verify that the beam is hitting the source. Use the beam sweep controller to focus the beam if needed. Once the shutter opens [The shutter light will come on] you can see the Gun#1 source thru the front viewport and the Gun #2 source with the camera. If you need to adjust the beam during the deposition do it slowly. If “pits” or “holes” are melted into the source, slowly move the beam around the edges of the hole, and let the melt flow back in and fill it.
9. The shutter will close and the gun will shut down automatically when your final thickness is reached.
10. Press the GUN CONTROL OFF button. Press the HV CONTROL OFF button. Turn the HV key OFF. Switch the main breaker on the CV-‐6SXL power supply OFF.
11. Push VENT TO LOAD/UNLOAD button on the load lock controller. The sample holder will return to the load lock and vent the load lock. Remove your sample.
12. Push PUMP TO STANDBY on the load lock controller.
13. Fill out the tool log.

= Materials Table =
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].

E-BEAM

2014-03-13T15:06:24Z

Freeborn d:

[[File:E-BEAM #3OPERATING INSTRUCTIONS-1.pdft]]