UCSB Nanofab Wiki - User contributions [en]

Laser Scanning Confocal M-scope (Olympus LEXT)

2024-07-30T16:02:50Z

Hopkins a: /* Offline software */

{{tool2|{{PAGENAME}}
|picture=OlympusLEXT.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Tony Bosch
|location=Bay 4
|description = Scanning Laser Confocal Microscope
|manufacturer = [http://www.olympus-ims.com/en/metrology/ols4000/ Olympus]
|materials =
|toolid=3
}}
=About=
The LEXT OLS4000 3D Laser Measuring Microscope is designed for nanometer level imaging, 3D measurement and roughness measurement. Magnification ranges from 108x - 17,280x satisfy the needs of today's researchers. For a complete description of the tool and its capabilities, please see the above link to the manufacturer’s website.

===Technique & Capabilities===
[[File:Olypmus LEXT Example Profile Measurement.png|alt=Measurement of 5µm wide posts|thumb|205x205px|Example Height/Profile Measurement (click to enlarge)]]
The LEXT allows you to take height measurements of features too small to reach with a physical Stylus needle, in a non-contact mode that is much faster than engaging an AFM tip. In addition, very large aspect-ratios can be measured - for example, 1mm depth x 50µm width. Confocal microscopy ensures that only surfaces that are in-focus will return a signal to the microscope detector. The LEXT sweeps the focus motor and captures a 2D scan of your sample at each focus step, taken with a blue laser (405 nm). After the scan, the height of each surface is calculated by the focus step which produced the highest laser intensity, and this is constructed into a 3D image by the OLS software.

Because this is an optical method, films that are optically transparent to blue light and/or have transparent sloping sidewalls can produce non-physical measurements due to optical interference on the sample. In addition, features on the order of the laser wavelength can produce unreliable/non-physical data - for example, the data near (within ~500 nm) very steep slopes, or features ≤ 1.0 µm wide may not be reliable.

Surfaces that are opaque to the laser wavelength work best, although measurements on rectangular transparent edges do work relatively well. Edges of steps where light does not reflect in an ideal manner often produce non-physical features, typically manifesting as trenches/spikes right next to the sidewall.

Technically the height-resolution is specified as 10 nm (the height resolution of the focus motor), but in practice, noise and optical uncertainties worsen this spec.

==Operating Procedures==
[[Olympus LEXT OLS4000 Confocal uScope - Quick Start|LEXT Quick Start]]

*Online Training Video:
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=c8d43220-e3aa-42b6-a372-ae290113b2c4 LEXT Laser Confocal M-Scope Training]
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

===Offline software===
[https://wiki.nanofab.ucsb.edu/w/images/0/01/LEXT_OLS4100_InstallManual_Ver.3.1.8_offline.pdf LEXT OLS4000 Offline Software]

==Other Info==
'''''Equip > Characterization > [[Microscopes]]''''' - ''see a list of all our microscopes''

File:LEXT OLS4100 InstallManual Ver.3.1.8 offline.pdf

2024-07-30T16:00:56Z

Hopkins a: LEXT Offline software

== Summary ==
LEXT Offline software

SEM 1 (JEOL IT800SHL)

2024-05-16T20:01:59Z

Hopkins a: /* Mechanical */

{{tool2|{{PAGENAME}}
|picture=SEM1_JEOL_IT800HSL.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Mitchell
|location=Bay 1
|description = JEOL 7600F FESEM
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]
|materials =
|toolid=
}}
==About==
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

===Capabilities===
The system has multiple detectors, detailed below.
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

The system can accept a 6” wafer, but only 140mm (X) and 80mm (Y) of the wafer is accessible with the stage movement.

The [[SEM Sample Coater (Hummer)|'''Hummer coater''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

This SEM also has an Electron-Beam Lithography Nabity system. Contact Aidan Hopkins for info.

==Detailed Specifications==

===Imaging===

*Resolution:
**0.5nm at 15kV SHL mode
**0.7nm at 1kV
**0.9nm at 500V
*Magnification:
**Photo magnification: x10 to x2,000,000 (128mm x 96mm)
**Display magnification: x27 to x5,480,000 (1280pix x 960pix)
*Imaging Modes:
**STD: Standard
**LDF: Large depth of focus
**BD: Beam deceleration
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
**SHL: Super hybrid lens
*Detectors
**SED: Secondary electron detector (low angle)
**UHD: Ultra high resolution detector
**SBED: Scintillated back scatter electron detector
***Inserts between the objective lens and the sample
**LVBED: Low vacuum back scatter electron detector
**LVSED: Low vacuum secondary electron detector
*Accelerating Voltages:
**SEM: 0.01 to 30kV
*Probe currents
**A few pA to 500nA (30kV) 100nA (5kV)
*Specimen stage
**X: 140mm Y: 80mm
**Z: 6mm to 41mm
**Tilt: -5 to 70 degrees (depending on sample holder and offset)
**Rotation: 360 degrees

==Operating Procedures==

*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].
*[https://www.youtube.com/watch?v=YeukVt1Fyi0 Optimizing Astigmatism (CalTech Nanoscience Institute)]
**Stig is the most common cause of blurry images.
**A Common mistake is to optimize stig on flat lines (eg. a cleaved edge or line/space features). This always leads to accidentally skewing the stig in the direction of the lines. Instead, make sure to optimize on a roundish feature, such as a piece of dust/debris.

SEM 1 (JEOL IT800SHL)

2024-05-16T20:01:41Z

Hopkins a: /* Capabilities */

{{tool2|{{PAGENAME}}
|picture=SEM1_JEOL_IT800HSL.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Mitchell
|location=Bay 1
|description = JEOL 7600F FESEM
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]
|materials =
|toolid=
}}
==About==
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

===Capabilities===
The system has multiple detectors, detailed below.
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

The system can accept a 6” wafer, but only 140mm (X) and 80mm (Y) of the wafer is accessible with the stage movement.

The [[SEM Sample Coater (Hummer)|'''Hummer coater''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

This SEM also has an Electron-Beam Lithography Nabity system. Contact Aidan Hopkins for info.

==Detailed Specifications==

===Imaging===

*Resolution:
**0.5nm at 15kV SHL mode
**0.7nm at 1kV
**0.9nm at 500V
*Magnification:
**Photo magnification: x10 to x2,000,000 (128mm x 96mm)
**Display magnification: x27 to x5,480,000 (1280pix x 960pix)
*Imaging Modes:
**STD: Standard
**LDF: Large depth of focus
**BD: Beam deceleration
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
**SHL: Super hybrid lens
*Detectors
**SED: Secondary electron detector (low angle)
**UHD: Ultra high resolution detector
**SBED: Scintillated back scatter electron detector
***Inserts between the objective lens and the sample
**LVBED: Low vacuum back scatter electron detector
**LVSED: Low vacuum secondary electron detector
*Accelerating Voltages:
**SEM: 0.01 to 30kV
*Probe currents
**A few pA to 500nA (30kV) 100nA (5kV)
*Specimen stage
**X: 140mm Y: 80mm
**Z: 6mm to 41mm
**Tilt: -5 to 70 degrees (depending on sample holder and offset)
**Rotation: 360 degrees

===Mechanical===

*Max Sample Size: 6-inch wafer
*Stage movement:
**max: 70 x 50mm
**4-inch wafer: limited to ~25x25mm movement area from wafer center.
*Tilt: -5° to varies. Tilt is dependent on sample holder, stage height, and offset value.
*Rotation: 360°
*Specimen holders :
**Copper and XYZ Carbon tape available
**4-inch wafer with topside clips
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.

==Operating Procedures==

*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].
*[https://www.youtube.com/watch?v=YeukVt1Fyi0 Optimizing Astigmatism (CalTech Nanoscience Institute)]
**Stig is the most common cause of blurry images.
**A Common mistake is to optimize stig on flat lines (eg. a cleaved edge or line/space features). This always leads to accidentally skewing the stig in the direction of the lines. Instead, make sure to optimize on a roundish feature, such as a piece of dust/debris.

SEM 1 (JEOL IT800SHL)

2024-05-16T20:00:01Z

Hopkins a: /* Imaging */

{{tool2|{{PAGENAME}}
|picture=SEM1_JEOL_IT800HSL.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Mitchell
|location=Bay 1
|description = JEOL 7600F FESEM
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]
|materials =
|toolid=
}}
==About==
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

===Capabilities===
The system has multiple detectors, detailed below.
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement.

The [[SEM Sample Coater (Hummer)|'''Hummer coater''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

This SEM also has an Electron-Beam Lithography Nabity system. Contact the supervisor for info.

==Detailed Specifications==

===Imaging===

*Resolution:
**0.5nm at 15kV SHL mode
**0.7nm at 1kV
**0.9nm at 500V
*Magnification:
**Photo magnification: x10 to x2,000,000 (128mm x 96mm)
**Display magnification: x27 to x5,480,000 (1280pix x 960pix)
*Imaging Modes:
**STD: Standard
**LDF: Large depth of focus
**BD: Beam deceleration
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
**SHL: Super hybrid lens
*Detectors
**SED: Secondary electron detector (low angle)
**UHD: Ultra high resolution detector
**SBED: Scintillated back scatter electron detector
***Inserts between the objective lens and the sample
**LVBED: Low vacuum back scatter electron detector
**LVSED: Low vacuum secondary electron detector
*Accelerating Voltages:
**SEM: 0.01 to 30kV
*Probe currents
**A few pA to 500nA (30kV) 100nA (5kV)
*Specimen stage
**X: 140mm Y: 80mm
**Z: 6mm to 41mm
**Tilt: -5 to 70 degrees (depending on sample holder and offset)
**Rotation: 360 degrees

===Mechanical===

*Max Sample Size: 6-inch wafer
*Stage movement:
**max: 70 x 50mm
**4-inch wafer: limited to ~25x25mm movement area from wafer center.
*Tilt: -5° to varies. Tilt is dependent on sample holder, stage height, and offset value.
*Rotation: 360°
*Specimen holders :
**Copper and XYZ Carbon tape available
**4-inch wafer with topside clips
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.

==Operating Procedures==

*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].
*[https://www.youtube.com/watch?v=YeukVt1Fyi0 Optimizing Astigmatism (CalTech Nanoscience Institute)]
**Stig is the most common cause of blurry images.
**A Common mistake is to optimize stig on flat lines (eg. a cleaved edge or line/space features). This always leads to accidentally skewing the stig in the direction of the lines. Instead, make sure to optimize on a roundish feature, such as a piece of dust/debris.

Field Emission SEM 2 (JEOL IT800SHL)

2023-11-09T22:50:07Z

Hopkins a: /* EDS Elemental Analysis */

File:EDS SOP.jpg

2023-11-09T22:46:32Z

Hopkins a:

Field Emission SEM 2 (JEOL IT800SHL)

2023-09-27T18:03:44Z

Hopkins a: /* EDAX Elemental Analysis */

File:EDS SOP.pdf

2023-09-27T18:02:49Z

Hopkins a:

SEM 1 (JEOL IT800SHL)

2023-09-26T15:24:43Z

Hopkins a: /* Mechanical */

{{tool2|{{PAGENAME}}
|picture=SEM1_JEOL_IT800HSL.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Mitchell
|location=Bay 1
|description = JEOL 7600F FESEM
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]
|materials =
|toolid=
}}
==About==
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

===Capabilities===
The system has multiple detectors, detailed below.
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement.

The [[SEM Sample Coater (Hummer)|'''Hummer coater''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

==Detailed Specifications==

===Imaging===

*Resolution:
**1nm guaranteed at 15kV SEM mode
**2.5nm at 1kV in SEM mode
**1.5nm at 1kV in GB mode
*Magnification:
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)
**Low-Mag LM mode: x25 to x19,000
*Imaging Modes/Detectors:
**SEI: secondary electron imaging
**LM: Low-magnification mode
**GB: Gentle-Beam mode
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
**LABE: Low-Angle Backscatter Electron detector
***Inserts between the objective lens and the sample
***Strong contrast between materials
**LEI: Lower Electron Detector
***Detector is lower on chamber, creating strong topographical contrast.
*Accelerating Voltages:
**SEM: 0.5 to 30kV
**GB: 0.1 to 4.0kV
*Beam Currents: 10-13 to 2x10-7 A

===Mechanical===

*Max Sample Size: 6-inch wafer
*Stage movement:
**max: 70 x 50mm
**4-inch wafer: limited to ~25x25mm movement area from wafer center.
*Tilt: -5° to varies. Tilt is dependent on sample holder, stage height, and offset value.
*Rotation: 360°
*Specimen holders :
**Copper and XYZ Carbon tape available
**4-inch wafer with topside clips
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.

==Operating Procedures==

*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].

SEM 1 (JEOL IT800SHL)

2023-09-26T15:22:43Z

Hopkins a: /* Detailed Specifications */

{{tool2|{{PAGENAME}}
|picture=SEM1_JEOL_IT800HSL.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Mitchell
|location=Bay 1
|description = JEOL 7600F FESEM
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]
|materials =
|toolid=
}}
==About==
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

===Capabilities===
The system has multiple detectors, detailed below.
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement.

The [[SEM Sample Coater (Hummer)|'''Hummer coater''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

==Detailed Specifications==

===Imaging===

*Resolution:
**1nm guaranteed at 15kV SEM mode
**2.5nm at 1kV in SEM mode
**1.5nm at 1kV in GB mode
*Magnification:
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)
**Low-Mag LM mode: x25 to x19,000
*Imaging Modes/Detectors:
**SEI: secondary electron imaging
**LM: Low-magnification mode
**GB: Gentle-Beam mode
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
**LABE: Low-Angle Backscatter Electron detector
***Inserts between the objective lens and the sample
***Strong contrast between materials
**LEI: Lower Electron Detector
***Detector is lower on chamber, creating strong topographical contrast.
*Accelerating Voltages:
**SEM: 0.5 to 30kV
**GB: 0.1 to 4.0kV
*Beam Currents: 10-13 to 2x10-7 A

===Mechanical===

*Max Sample Size: 4-inch wafer
*Stage movement:
**max: 70 x 50mm
**4-inch wafer: limited to ~25x25mm movement area from wafer center.
*Tilt: -5° to +70°
*Rotation: 360°
*Specimen holders :
**Copper and XYZ Carbon tape available
**4-inch wafer with topside clips
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.

==Operating Procedures==

*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].

SEM 1 (JEOL IT800SHL)

2023-09-26T15:22:10Z

Hopkins a: /* Operating Procedures */

{{tool2|{{PAGENAME}}
|picture=SEM1_JEOL_IT800HSL.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Mitchell
|location=Bay 1
|description = JEOL 7600F FESEM
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]
|materials =
|toolid=
}}
==About==
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

===Capabilities===
The system has multiple detectors, detailed below.
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement.

The [[SEM Sample Coater (Hummer)|'''Hummer coater''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

==Detailed Specifications==

===Imaging===

{{Todo|UPDATE - these are from the SEM2 page}}

*Resolution:
**1nm guaranteed at 15kV SEM mode
**2.5nm at 1kV in SEM mode
**1.5nm at 1kV in GB mode
*Magnification:
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)
**Low-Mag LM mode: x25 to x19,000
*Imaging Modes/Detectors:
**SEI: secondary electron imaging
**LM: Low-magnification mode
**GB: Gentle-Beam mode
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
**LABE: Low-Angle Backscatter Electron detector
***Inserts between the objective lens and the sample
***Strong contrast between materials
**LEI: Lower Electron Detector
***Detector is lower on chamber, creating strong topographical contrast.
*Accelerating Voltages:
**SEM: 0.5 to 30kV
**GB: 0.1 to 4.0kV
*Beam Currents: 10-13 to 2x10-7 A

===Mechanical===

*Max Sample Size: 4-inch wafer
*Stage movement:
**max: 70 x 50mm
**4-inch wafer: limited to ~25x25mm movement area from wafer center.
*Tilt: -5° to +70°
*Rotation: 360°
*Specimen holders :
**Copper and XYZ Carbon tape available
**4-inch wafer with topside clips
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.

==Operating Procedures==

*J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure].

File:JEOL IT800SHL Operating Procedure.docx

2023-09-26T15:21:23Z

Hopkins a:

SEM 1 (JEOL IT800SHL)

2023-09-26T15:20:52Z

Hopkins a: /* Operating Procedures */

{{tool2|{{PAGENAME}}
|picture=SEM1_JEOL_IT800HSL.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Mitchell
|location=Bay 1
|description = JEOL 7600F FESEM
|manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]
|materials =
|toolid=
}}
==About==
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

===Capabilities===
The system has multiple detectors, detailed below.
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

The system can accept a 6” wafer, but only XYZXYZ mm of the wafer is accessible with the stage movement.

The [[SEM Sample Coater (Hummer)|'''Hummer coater''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

==Detailed Specifications==

===Imaging===

{{Todo|UPDATE - these are from the SEM2 page}}

*Resolution:
**1nm guaranteed at 15kV SEM mode
**2.5nm at 1kV in SEM mode
**1.5nm at 1kV in GB mode
*Magnification:
**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)
**Low-Mag LM mode: x25 to x19,000
*Imaging Modes/Detectors:
**SEI: secondary electron imaging
**LM: Low-magnification mode
**GB: Gentle-Beam mode
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
**LABE: Low-Angle Backscatter Electron detector
***Inserts between the objective lens and the sample
***Strong contrast between materials
**LEI: Lower Electron Detector
***Detector is lower on chamber, creating strong topographical contrast.
*Accelerating Voltages:
**SEM: 0.5 to 30kV
**GB: 0.1 to 4.0kV
*Beam Currents: 10-13 to 2x10-7 A

===Mechanical===

*Max Sample Size: 4-inch wafer
*Stage movement:
**max: 70 x 50mm
**4-inch wafer: limited to ~25x25mm movement area from wafer center.
*Tilt: -5° to +70°
*Rotation: 360°
*Specimen holders :
**Copper and XYZ Carbon tape available
**4-inch wafer with topside clips
**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.

==Operating Procedures==
*JEOL IT800SHL Operating Procedure.

Automated Wafer Cleaver (Loomis LSD-155LT)

2023-09-26T15:16:15Z

Hopkins a:

{{tool2|{{PAGENAME}}
|picture=IMG_0554.jpg
|type = Packaging
|super= Aidan Hopkins
|super2=
|location=Backend Lab: ESB 1111
|description = Loomis Automated Wafer Cleaver
|model = LSD-155LT
|manufacturer = Loomis Industries Inc.
|materials = III-V's, thin Silicon
|toolid=
}}
==About==
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.

==Detailed Specifications==

*Maximum Wafer Size: 4"
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings.
*Automated cut maps at multiple angles (0° and 90° typical)
*~few micron alignment to on-wafer features.
*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.
*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.

==Operating Procedures==

*[https://wiki.nanofab.ucsb.edu/w/images/d/d6/Loomis_Scriber_SOP.docx Loomis LSD-155LT Standard Operating Procedure]

==Recipes==

*Recipes > Packaging > '''[[Wafer Cleaver Recipes (LSD-155LT)]]'''
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.

File:Loomis Scriber SOP.docx

2023-09-26T15:15:07Z

Hopkins a:

Wafer Bonder (SUSS SB6-8E)

2023-09-20T17:53:18Z

Hopkins a: /* Documentation */

{{tool2|{{PAGENAME}}
|picture=WaferBonder.jpg
|type = Thermal Processing
|super= Aidan Hopkins
|super2= Lee Sawyer
|phone=(805)839-3918x216
|location=Bay 7
|email=freeborn@ece.ucsb.edu
|description = Karl Suss Substrate Bonder
|manufacturer = Karl Suss America
|materials =
|toolid=41
}}
=About=
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.

=Detailed Specifications=

*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity
*Upper and lower heating of samples
*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen
*Sample size: pieces to 6” wafers, aligned bonding by using the [[Contact Aligner (SUSS MA-6)|MA/BA-6 aligner]] - contact supervisor for setup.
*Anodic bonding to 2000 V
*Windows-based computer control
*Wafer bonder currently set up for 4" wafers

=Documentation=

*[https://wiki.nanofab.ucsb.edu/w/images/1/12/Bonder_Pressure_Rules_Vis_Aid.docx Bonder Pressure Rules Visual Aid]
*[https://wiki.nanofab.ucsb.edu/w/images/5/5c/Suss_Bonder_Recipe_Guidelines.docx Bonder Recipe Guidelines]

Wafer Bonder (SUSS SB6-8E)

2023-09-20T14:33:42Z

Hopkins a:

{{tool2|{{PAGENAME}}
|picture=WaferBonder.jpg
|type = Thermal Processing
|super= Aidan Hopkins
|super2= Lee Sawyer
|phone=(805)839-3918x216
|location=Bay 7
|email=freeborn@ece.ucsb.edu
|description = Karl Suss Substrate Bonder
|manufacturer = Karl Suss America
|materials =
|toolid=41
}}
=About=
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.

=Detailed Specifications=

*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity
*Upper and lower heating of samples
*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen
*Sample size: pieces to 6” wafers, aligned bonding by using the [[Contact Aligner (SUSS MA-6)|MA/BA-6 aligner]] - contact supervisor for setup.
*Anodic bonding to 2000 V
*Windows-based computer control
*Wafer bonder currently set up for 4" wafers

=Documentation=

*Bonder Pressure Rules Visual Aid
*[https://wiki.nanofab.ucsb.edu/w/images/5/5c/Suss_Bonder_Recipe_Guidelines.docx Bonder Recipe Guidelines]

File:Suss Bonder Recipe Guidelines.docx

2023-09-20T14:28:59Z

Hopkins a: Bonder Recipe Guidelines

== Summary ==
Bonder Recipe Guidelines

Wafer Bonder (SUSS SB6-8E)

2023-09-20T14:24:56Z

Hopkins a:

{{tool2|{{PAGENAME}}
|picture=WaferBonder.jpg
|type = Thermal Processing
|super= Aidan Hopkins
|super2= Lee Sawyer
|phone=(805)839-3918x216
|location=Bay 7
|email=freeborn@ece.ucsb.edu
|description = Karl Suss Substrate Bonder
|manufacturer = Karl Suss America
|materials =
|toolid=41
}}
=About=
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.

=Detailed Specifications=

*Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity
*Upper and lower heating of samples
*5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen
*Sample size: pieces to 6” wafers, aligned bonding by using the [[Contact Aligner (SUSS MA-6)|MA/BA-6 aligner]] - contact supervisor for setup.
*Anodic bonding to 2000 V
*Windows-based computer control
*Wafer bonder currently set up for 4" wafers

=Documentation=
*Bonder Pressure Rules Visual Aid
*Bonder Recipe Guidelines

File:Bonder Pressure Rules Vis Aid.docx

2023-09-20T14:21:29Z

Hopkins a: Bonder Pressure Rules Visual Aid

== Summary ==
Bonder Pressure Rules Visual Aid

Template:Announcements

2023-08-29T22:32:42Z

Hopkins a: /* SEM 2 Update */

<startfeed />
=====SEM 2 is Up=====
JEOL has finished will the install and the SEM is available to use if you've received training on SEM #1.
[[User:Hopkins a|Hopkins a]] 15:32, 29 August 2023 (PDT)

=====Plasma Activation (EVG 810)=====
We have received almost all the replacement parts for the tool except the new chuck. The original delivery date of mid June has now been pushed out to early September and they have stated that this is the best that their supplier can do. I will not be installing any new parts on the tool until we have everything.
Runs will still require Staff supervision until then.
//[[User:Mehalana v|Vraj Mehalana]] 18:01, 2 May 2023 (PDT)







<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Automated Wafer Cleaver (Loomis LSD-155LT)

2023-08-16T18:06:20Z

Hopkins a:

{{tool2|{{PAGENAME}}
|picture=IMG_0554.jpg
|type = Packaging
|super= Aidan Hopkins
|super2=
|location=Backend Lab: ESB 1111
|description = Loomis Automated Wafer Cleaver
|model = LSD-155LT
|manufacturer = Loomis Industries Inc.
|materials = III-V's, thin Silicon
|toolid=
}}
==About==
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.

==Detailed Specifications==

*Maximum Wafer Size: 4"
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings.
*Automated cut maps at multiple angles (0° and 90° typical)
*~few micron alignment to on-wafer features.
*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.
*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.

==Operating Procedures==

*[https://wiki.nanotech.ucsb.edu/LoomisSOP.pdf Loomis LSD-155LT Standard Operating Procedure]

==Recipes==

*Recipes > Packaging > '''[[Wafer Cleaver Recipes (LSD-155LT)]]'''
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.

File:IMG 0554.jpg

2023-08-16T17:59:41Z

Hopkins a:

Automated Wafer Cleaver (Loomis LSD-155LT)

2023-05-16T15:04:10Z

Hopkins a: /* Detailed Specifications */

{{tool2|{{PAGENAME}}
|picture=LoomisLSD155lt.jpg
|type = Packaging
|super= Aidan Hopkins
|super2=
|location=Backend Lab: ESB 1111
|description = Loomis Automated Wafer Cleaver
|model = LSD-155LT
|manufacturer = Loomis Industries Inc.
|materials = III-V's, thin Silicon
|toolid=
}}
==About==
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.

==Detailed Specifications==

*Maximum Wafer Size: 4"
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings.
*Automated cut maps at multiple angles (0° and 90° typical)
*~few micron alignment to on-wafer features.
*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.
*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.

==Operating Procedures==

*[https://wiki.nanotech.ucsb.edu/LoomisSOP.pdf Loomis LSD-155LT Standard Operating Procedure]

==Recipes==

*Recipes > Packaging > '''Wafer Cleaver Recipes (LSD-155LT)'''
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.

Automated Wafer Cleaver (Loomis LSD-155LT)

2023-05-16T14:59:30Z

Hopkins a: /* About */

{{tool2|{{PAGENAME}}
|picture=LoomisLSD155lt.jpg
|type = Packaging
|super= Aidan Hopkins
|super2=
|location=Backend Lab: ESB 1111
|description = Loomis Automated Wafer Cleaver
|model = LSD-155LT
|manufacturer = Loomis Industries Inc.
|materials = III-V's, thin Silicon
|toolid=
}}
==About==
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.

==Detailed Specifications==

*Maximum Wafer Size: 4"
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings.
*Automated cut maps at multiple angles (0° and 90° typical)
*~few micron alignment to on-wafer features.
*TBD

==Operating Procedures==

*[https://wiki.nanotech.ucsb.edu/LoomisSOP.pdf Loomis LSD-155LT Standard Operating Procedure]

==Recipes==

*Recipes > Packaging > '''Wafer Cleaver Recipes (LSD-155LT)'''
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.

Aidan Hopkins

2023-04-13T14:20:13Z

Hopkins a: /* Tools */

{{staff|{{PAGENAME}}
|position = Facility Staff Manager
|room = 1109B
|phone = (805) 893-2343
|cell = (805) 450-2890
|email = hopkins@ece.ucsb.edu
}}

=About=
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager. Aidan transitioned back to a Senior Development Engineer in 2022.

=Current Work=
Aidan is a Senior Development Engineer.

=Tools=
Aidan Hopkins is in charge of the following tools:
{|
|- valign="top"
| width="300" |
*[[RIE 5 (PlasmaTherm)|RIE #5 (Plasma Therm SLR)]]
*[[Wafer_Bonder_(SUSS_SB6-8E)]]
*[[Field_Emission_SEM_2_(JEOL_7600F)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]
*[[Dektak XT (Bruker)]]
*[[Scribe and Break (Loomis)]]
||
*Wet Benches
**[[Wet_Benches#Wafer_Toxic_Corrosive_Benches|Wafer Toxic Corrosive]]

|}

Aidan Hopkins

2023-04-13T14:18:47Z

Hopkins a: /* About */

{{staff|{{PAGENAME}}
|position = Facility Staff Manager
|room = 1109B
|phone = (805) 893-2343
|cell = (805) 450-2890
|email = hopkins@ece.ucsb.edu
}}

=About=
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager. Aidan transitioned back to a Senior Development Engineer in 2022.

=Current Work=
Aidan is a Senior Development Engineer.

=Tools=
Aidan Hopkins is in charge of the following tools:
{|
|- valign="top"
| width="300" |
*[[RIE 5 (PlasmaTherm)|RIE #5 (Plasma Therm SLR)]]
*[[Wafer_Bonder_(SUSS_SB6-8E)]]
*[[Field_Emission_SEM_2_(JEOL_7600F)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]
||
*Wet Benches
**[[Wet_Benches#Wafer_Toxic_Corrosive_Benches|Wafer Toxic Corrosive]]

|}

Aidan Hopkins

2023-04-13T14:18:04Z

Hopkins a: /* Current Work */

{{staff|{{PAGENAME}}
|position = Facility Staff Manager
|room = 1109B
|phone = (805) 893-2343
|cell = (805) 450-2890
|email = hopkins@ece.ucsb.edu
}}

=About=
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.

=Current Work=
Aidan is a Senior Development Engineer.

=Tools=
Aidan Hopkins is in charge of the following tools:
{|
|- valign="top"
| width="300" |
*[[RIE 5 (PlasmaTherm)|RIE #5 (Plasma Therm SLR)]]
*[[Wafer_Bonder_(SUSS_SB6-8E)]]
*[[Field_Emission_SEM_2_(JEOL_7600F)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]
||
*Wet Benches
**[[Wet_Benches#Wafer_Toxic_Corrosive_Benches|Wafer Toxic Corrosive]]

|}

Step Profilometer (DektakXT)

2023-02-22T23:57:11Z

Hopkins a: /* Tool References */

'''The Dektak 6M has been replaced by a new Dektak XT.'''
{{tool2|{{PAGENAME}}
|picture=Dektak6M.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Millerski
|phone=(805)839-3918x219
|location=Bay 3
|email=silva@ece.ucsb.edu
|description = Surface Profilometer
|manufacturer = Bruker
|materials =
}}
=About=
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMS type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.

=Detailed Specifications=

*50 mm maximum sample thickness/8 inch maximum sample diameter
*.03 mg to 15 mg variable tip force
*Height/Depth measurements to 1 mm
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um
*Standard stylus radius is 12.5 um, optional 2 um stylus available
*6 inch stage diameter with manual controls for moving and leveling
*Maximum scan length of 55mm (minimum of 50um)
*Software data leveling and other analysis including stress and roughness
*Full GUI-based Windows control and data storage and exporting capability

=Tool References=

*[https://wiki.nanotech.ucsb.edu/w/images/6/6c/DektakXT_Operating_Procedure.pdf DektakXT SOP]
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]

Step Profilometer (DektakXT)

2023-02-22T14:57:43Z

Hopkins a:

Step Profilometer (DektakXT)

2023-02-22T14:56:34Z

Hopkins a: /* Tool References */

Step Profilometer (DektakXT)

2023-02-01T15:06:26Z

Hopkins a: /* Tool References */

'''The Dektak 6M has been removed from the lab, and a new Dektak XT is currently being qualified. 2023-01-20'''
{{tool2|{{PAGENAME}}
|picture=Dektak6M.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Millerski
|phone=(805)839-3918x219
|location=Bay 3
|email=silva@ece.ucsb.edu
|description = Surface Profilometer
|manufacturer = Bruker
|materials =
}}
=About=
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.

=Detailed Specifications=

*50 mm maximum sample thickness/8 inch maximum sample diameter
*.03 mg to 15 mg variable tip force
*Height/Depth measurements to 1 mm
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um
*Standard stylus radius is 12.5 um, optional 2 um stylus available
*6 inch stage diameter with manual controls for moving and leveling
*Maximum scan length of 55mm (minimum of 50um)
*Software data leveling and other analysis including stress and roughness
*Full GUI-based Windows control and data storage and exporting capability

=Tool References=

*[https://wiki.nanotech.ucsb.edu/w/images/6/6c/DektakXT_Operating_Procedure.pdf DektakXT SOP]
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]

File:DektakXT Operating Procedure.pdf

2023-01-31T17:00:19Z

Hopkins a: DektakXT SOP

== Summary ==
DektakXT SOP

Tool List

2023-01-25T23:36:40Z

Hopkins a: /* Topographical Metrology */

__NOTOC__
=Lithography=

{|
|- valign="top"
| width="300" |
=====Photoresists and Lithography Chemicals=====

*See the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]

=====Contact Aligners (Optical Exposure)=====

*[[Suss Aligners (SUSS MJB-3)]]
*[[Contact Aligner (SUSS MA-6)]]
*[[DUV Flood Expose]]

=====Direct-Write Lithography=====

*[[E-Beam Lithography System (JEOL JBX-6300FS)]]
*[[Field Emission SEM 1 (FEI Sirion)|E-Beam Lithography (FEI Sirion Nabity v9)]]
*[[Focused Ion-Beam Lithography (Raith Velion)]]
*[[Maskless Aligner (Heidelberg MLA150)]]

=====Other Patterning Systems=====

*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
=====Steppers (Optical Exposure)=====

*[[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

=====Thermal Processing for Photolithography=====

*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]
*[[Ovens 1, 2 & 3 (Labline)]]
*[[Oven 4 (Fisher)]]
*[[Oven 5 (Labline)]]
*[[High Temp Oven (Blue M)]]

=====Lithography Support=====

*The [https://wiki.nanotech.ucsb.edu/w/index.php?title=Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]
|-
|}

=Vacuum Deposition=

{|
|- valign="top"
| width="300" |
====Physical Vapor Deposition (PVD)====

=====Thermal Evaporation=====

*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[E-Beam 5 (Plasys)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

=====Sputter Deposition=====

*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]
*[[SEM Sample Coater (Hummer)]]

| width="400" |
=====Chemical Vapor Deposition (CVD)=====

*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

=Dry Etch=

{|
|- valign="top"
| width="300" |
=====Reactive Ion Etching (RIE)=====

*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]

=====Plasma Etching and Cleaning=====

*[[Plasma Clean (YES EcoClean)]]
*[[Plasma Activation (EVG 810)]]
*[[Ashers (Technics PEII)]]

=====Etch Monitoring=====

*[[Laser Etch Monitoring]] (Endpoint Detection)
*Optical Emission Spectra
*Residual Gas Analyzer (RGA)
| width="400" |
=====ICP-RIE=====

*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Oxford ICP Etcher (PlasmaPro 100 Cobra)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

=====Ion Milling and Reactive Ion Beam Etching=====

*[[CAIBE (Oxford Ion Mill)]]
*[[Focused Ion-Beam Lithography (Raith Velion)]]

=====Other Dry Etching=====

*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
*[[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[Wet Benches#Wafer Toxic Corrosive Benches|Wafer Toxic Corrosive Bench]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
*[[Gold Plating Bench]]
*[[Critical Point Dryer]]
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
*[[Mechanical Polisher (Allied)]]
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
*[[Rapid Thermal Processor (SSI Solaris 150)]]
*[[Tube Furnace (Tystar 8300)]]
*[[Tube Furnace Wafer Bonding (Thermco)]]
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
| width="400" |
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]
**[[Ovens 1, 2 & 3 (Labline)]]
**[[Oven 4 (Thermo-Fisher HeraTherm)]]
**[[Oven 5 (Labline)]]
**[[High Temp Oven (Blue M)]]
|-
|}

=Packaging=
{|
|
====Die Singulation / Down-sizing====

*[[Dicing Saw (ADT)]]
*[[Wafer Cleaver (PELCO Flip-Scribe)|Wafer Cleaver (PELCO Flipscribe)]]

====Other Packaging====

*[[Vacuum Sealer]]
|
====Wafer/Die Bonding====

*[[Flip-Chip Bonder (Finetech)]]

*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
|}

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
=====Optical Microscopy=====

*[[Microscopes|Optical Microscopes]] - ''General Use''
*[[Fluorescence Microscope (Olympus MX51)]]
*[[Deep UV Optical Microscope (Olympus)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
*[[Digital Microscope (Olympus DSX1000)|Digital Microscope #7 (Olympus DSX1000)]]

=====Electron Microscopy=====

*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Field Emission SEM 2 (JEOL 7600F)]]
*[[SEM Sample Coater (Hummer)]]

=====Topographical Metrology=====

*[[Step Profilometer (KLA Tencor P-7)]]
*[[Step Profilometer (DektakXT)]]
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |

=====Thin-Film/Material Analysis=====

======Thickness + Optical Constants======

*[[Ellipsometer (Woollam)]]
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]

======Electrical Analysis======

*[[Resistivity Mapper (CDE RESMAP)]]
*[[Probe Station & Curve Tracer|Probe Station & Source/Meter Units]]
*[[Photo-emission & IR Microscope (QFI)|Photo-emission & Thermal IR Microscope (QFI)]]

======Other Properties======

*[[Film Stress (Tencor Flexus)]]
*[[Surface Analysis (KLA/Tencor Surfscan)|Particle Counts (KLA/Tencor Surfscan)]]
*[[Photoluminescence PL Setup (Custom)]]
*[[Goniometer (Rame-Hart A-100)|Goniometer (Ramé-Hart A-100)]]
**''Surface hydrophobicity''
|-
|}

Step Profilometer (Dektak 6M)

2023-01-25T23:34:43Z

Hopkins a: Hopkins a moved page Step Profilometer (Dektak 6M) to Step Profilometer (DektakXT)

#REDIRECT [[Step Profilometer (DektakXT)]]

Step Profilometer (DektakXT)

2023-01-25T23:34:43Z

Hopkins a: Hopkins a moved page Step Profilometer (Dektak 6M) to Step Profilometer (DektakXT)

'''The Dektak 6M has been removed from the lab, and a new Dektak XT is currently being qualified. 2023-01-20'''
{{tool2|{{PAGENAME}}
|picture=Dektak6M.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Millerski
|phone=(805)839-3918x219
|location=Bay 3
|email=silva@ece.ucsb.edu
|description = Surface Profilometer
|manufacturer = Bruker
|materials =
}}
=About=
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.

=Detailed Specifications=

*50 mm maximum sample thickness/8 inch maximum sample diameter
*.03 mg to 15 mg variable tip force
*Height/Depth measurements to 1 mm
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um
*Standard stylus radius is 12.5 um, optional 2 um stylus available
*6 inch stage diameter with manual controls for moving and leveling
*Maximum scan length of 55mm (minimum of 50um)
*Software data leveling and other analysis including stress and roughness
*Full GUI-based Windows control and data storage and exporting capability

=Tool References=

*DektakXT SOP
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]

Step Profilometer (DektakXT)

2023-01-25T23:33:57Z

Hopkins a:

'''The Dektak 6M has been removed from the lab, and a new Dektak XT is currently being qualified. 2023-01-20'''
{{tool2|{{PAGENAME}}
|picture=Dektak6M.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Millerski
|phone=(805)839-3918x219
|location=Bay 3
|email=silva@ece.ucsb.edu
|description = Surface Profilometer
|manufacturer = Bruker
|materials =
}}
=About=
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.

=Detailed Specifications=

*50 mm maximum sample thickness/8 inch maximum sample diameter
*.03 mg to 15 mg variable tip force
*Height/Depth measurements to 1 mm
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um
*Standard stylus radius is 12.5 um, optional 2 um stylus available
*6 inch stage diameter with manual controls for moving and leveling
*Maximum scan length of 55mm (minimum of 50um)
*Software data leveling and other analysis including stress and roughness
*Full GUI-based Windows control and data storage and exporting capability

=Tool References=

*DektakXT SOP
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]

Step Profilometer (DektakXT)

2023-01-25T23:31:54Z

Hopkins a:

Step Profilometer (DektakXT)

2023-01-25T23:26:05Z

Hopkins a:

Template:Announcements

2022-11-08T16:12:33Z

Hopkins a:

<startfeed />


'''''Important Announcements'''''
----




===== JEOL SEM is Down =====
A service engineer will be here starting at noon (11/8) to do preventative maintenance. Service should be completed on Friday (11/11) around 1pm.
//[[User:Hopkins a|Hopkins a]] 08:12, 8 November 2022 (PST)

===== ASML UP =====
PM complete, system is up.
// [[User:John d|John d]] 13:25, 4 November 2022 (PDT)

===== Au Plating: DOWN =====
Bath damaged, system is down for repair.
// [[User:John d|John d]] 08:48, 27 October 2022 (PDT)

===== E-Beam#2: Heater Down =====
EB2 Heated Processing is down
// [[User:John d|John d]] 15:40, 21 September 2022 (PDT)

===== MLA 150 Software Revision =====
The MLA has new software - make sure to see the updated operating procedures.
In addition, any users running the “small” substrate templates (<12mm samples) must be absolutely sure that “Pneumatic Autofocus” is disabled or risk crashing the optics - please see email and note at the tool for details.
// [[User:John d|John d]] 16:27, 17 October 2022 (PDT)

===== ASML Up; Network status =====

Nanofiles sync & JobCreator functionality is in the process of being restored.
Batch_Report syncing is not yet working. JobCreator is working with staff intervention, as local scripts are still being written + tested.

// [[User:John d|John d]] 15:44, 29 September 2022 (PDT)

===== NanoFab Job Openings =====
The NanoFab has current job openings, apply at: [https://wiki.nanotech.ucsb.edu/wiki/Nanofab_Job_Postings '''NanoFab Job Postings''']

// [[User:John d|John d]] 23:55, 4 October 2022 (PDT)



<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Aidan Hopkins

2022-07-15T15:10:07Z

Hopkins a: /* Tools */

{{staff|{{PAGENAME}}
|position = Facility Staff Manager
|room = 1109B
|phone = (805) 893-2343
|cell = (805) 450-2890
|email = hopkins@ece.ucsb.edu
}}

=About=
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.

=Current Work=
Aidan is the Facility Staff Manager of the Nanofab. Contact Aidan with any facility related issues.

=Tools=
Aidan Hopkins is in charge of the following tools:
{|
|- valign="top"
| width="300" |
*[[RIE 5 (PlasmaTherm)|RIE #5 (Plasma Therm SLR)]]
*[[Wafer Bonder (Suss SB6-8E)]]
*[[Field Emission SEM 2 (JEOL)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[DSE (Plasma Therm)]]
||
*Wet Benches
**[[Wafer Toxic Corrosive]]

|}

Aidan Hopkins

2022-07-15T15:07:46Z

Hopkins a: /* Tools */

{{staff|{{PAGENAME}}
|position = Facility Staff Manager
|room = 1109B
|phone = (805) 893-2343
|cell = (805) 450-2890
|email = hopkins@ece.ucsb.edu
}}

=About=
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.

=Current Work=
Aidan is the Facility Staff Manager of the Nanofab. Contact Aidan with any facility related issues.

=Tools=
Aidan Hopkins is in charge of the following tools:
{|
|- valign="top"
| width="300" |
*[[RIE #5 (Plasma Therm SLR)]]
*[[Wafer Bonder (Suss SB6-8E)]]
*[[Field Emission SEM 2 (JEOL)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[DSE (Plasma Therm)]]
||
*Wet Benches
**[[Wafer Toxic Corrosive]]

|}

Template:Announcements

2022-07-15T15:00:42Z

Hopkins a:

Template:Announcements

2021-11-05T20:00:03Z

Hopkins a:

<startfeed />


'''''Important Announcements'''''
----




===== Oxford ICP Installed =====
A new ICP etcher for III-V etches (GaAs, InP, GaN) has been installed: [[Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)]]

Contact [[Tony_Bosch | the supervisor]] for training.
// [[User:John d|John d]] 08:00, 30 September 2021 (PDT)

===== New UC system-wide Flu Vaccine mandate =====
The UC Office of the President has issued an executive order making influenza vaccinations mandatory for all UC students and employees. The order, effective throughout the 2021-22 flu season, requires that all students and faculty and staff members who live, learn or work on any UC campus or want to access any UC facilities attest that they have received a flu vaccination, or have chosen to decline a vaccination, no later than November 19. Declining the vaccination will require use of masks indoors throughout the flu season.

All facility users are covered under this mandate.
//[[User:Thibeault|Thibeault]] 11:26, 27 October 2021 (PDT)

===== Holiday Shutdown =====
The Nanofab will be closed from Friday, December 24th at 6pm until Monday, January 3rd at 6a. We will be performing our yearly preventative maintenance. Users will not be allowed in the lab during this time.
//[[User:Hopkins a|Hopkins a]] 13:00, 5 November 2021 (PDT)

===== New COVID Protocols =====
All facility users and visitors are now required to have masks on while indoors in shared spaces. This includes shared offices, hallways/corridors, and all shared laboratory spaces. Masks will be worn in all laboratories at all times and in all shared office spaces at all times.

This direction applies to all vaccinated and non-vaccinated persons.

Outdoor policies remain unchanged

Surgical style masks or KN95 masks are appropriate for cleanroom use. Cloth masks may be used in non-cleanroom spaces.

See the full policies at [[COVID-19_User_Policies]]

// [[User:Hopkins a|Hopkins a]] 08:14, 6 August 2021 (PDT)

===== Weekly Testing strongly urged for UCSB Students/Staff =====
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are strongly urged to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.

Weekly recurring appointments can be made at the Student Health website:
* Log on to the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx '''UCSB Testing Patient Portal'''] using your UCSB NetID and password.

The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].
// [[User:John d|John d]] 06:20, 16 November 2020 (PST)

===== NanoFab COVID Protocols =====

''The most recent COVID Protocols can be found at '''[[COVID-19_User_Policies]]'''.''

// [[User:John d|John d]] 15:00, 19 July 2020 (PDT)



<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Template:Announcements

2021-08-19T23:52:08Z

Hopkins a:

<startfeed />


'''''Equipment Status'''''
----




===== Building Controls Update next Friday (8/27) =====
Campus facilities will be doing a firmware update on the building controls at 7am. No disruption in operation is expected but there is a slight chance of a small change in cleanroom temperature and/or pressure. Please plan accordingly.
[[User:Hopkins a|Hopkins a]] 16:52, 19 August 2021 (PDT)

===== New COVID Protocols =====
All facility users and visitors are now required to have masks on while indoors in shared spaces. This includes shared offices, hallways/corridors, and all shared laboratory spaces. Masks will be worn in all laboratories at all times and in all shared office spaces at all times.

This direction applies to all vaccinated and non-vaccinated persons.

Outdoor policies remain unchanged

Surgical style masks or KN95 masks are appropriate for cleanroom use. Cloth masks may be used in non-cleanroom spaces.
[[User:Hopkins a|Hopkins a]] 08:14, 6 August 2021 (PDT)

===== Weekly Testing strongly urged for UCSB Students/Staff =====
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are strongly urged to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.

Weekly recurring appointments can be made at the Student Health website:
* Log on to the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx '''UCSB Testing Patient Portal'''] using your UCSB NetID and password.

The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].
// [[User:John d|John d]] 06:20, 16 November 2020 (PST)

===== NanoFab COVID Protocols =====
Following guidelines provided by our Office of Research, the UCSB Nanofabrication Facility is open only for limited/authorized use for critical activity at this time.

Contact the [[Brian Thibeault|Lab Director]] for more information.

''The most recent COVID Protocols can be found at '''[[COVID-19_User_Policies]]'''.''

// [[User:John d|John d]] 15:00, 19 July 2020 (PDT)



<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Template:Announcements

2021-08-06T15:14:56Z

Hopkins a:

<startfeed />


'''''Equipment Status'''''
----




===== New COVID Protocols =====
All facility users and visitors are now required to have masks on while indoors in shared spaces. This includes shared offices, hallways/corridors, and all shared laboratory spaces. Masks will be worn in all laboratories at all times and in all shared office spaces at all times.

This direction applies to all vaccinated and non-vaccinated persons.

Outdoor policies remain unchanged

Surgical style masks or KN95 masks are appropriate for cleanroom use. Cloth masks may be used in non-cleanroom spaces.
[[User:Hopkins a|Hopkins a]] 08:14, 6 August 2021 (PDT)

===== Weekly Testing strongly urged for UCSB Students/Staff =====
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are strongly urged to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.

Weekly recurring appointments can be made at the Student Health website:
* Log on to the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx '''UCSB Testing Patient Portal'''] using your UCSB NetID and password.

The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].
// [[User:John d|John d]] 06:20, 16 November 2020 (PST)

===== NanoFab COVID Protocols =====
Following guidelines provided by our Office of Research, the UCSB Nanofabrication Facility is open only for limited/authorized use for critical activity at this time.

Contact the [[Brian Thibeault|Lab Director]] for more information.

''The most recent COVID Protocols can be found at '''[[COVID-19_User_Policies]]'''.''

// [[User:John d|John d]] 15:00, 19 July 2020 (PDT)



<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Template:Announcements

2021-08-06T15:08:57Z

Hopkins a: /* SEM#2 is down */

<startfeed />


'''''Equipment Status'''''
----




===== New COVID Protocols =====
ISO Spray is no longer required inside the lab. Masks are required only for unvaccinated individuals.
There are no distancing or occupancy restrictions.

Read the latest policies on the [https://wiki.nanotech.ucsb.edu/wiki/COVID-19_User_Policies '''COVID-19 User Policies'''] page.

// [[User:Thibeault|Thibeault]] 14:15, 24 June 2021 (PDT)

===== Weekly Testing strongly urged for UCSB Students/Staff =====
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are strongly urged to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.

Weekly recurring appointments can be made at the Student Health website:
* Log on to the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx '''UCSB Testing Patient Portal'''] using your UCSB NetID and password.

The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].
// [[User:John d|John d]] 06:20, 16 November 2020 (PST)

===== NanoFab COVID Protocols =====
Following guidelines provided by our Office of Research, the UCSB Nanofabrication Facility is open only for limited/authorized use for critical activity at this time.

Contact the [[Brian Thibeault|Lab Director]] for more information.

''The most recent COVID Protocols can be found at '''[[COVID-19_User_Policies]]'''.''

// [[User:John d|John d]] 15:00, 19 July 2020 (PDT)



<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Aidan Hopkins

2021-07-13T15:33:44Z

Hopkins a:

{{staff|{{PAGENAME}}
|position = Facility Staff Manager
|room = 1109B
|phone = (805) 893-2343
|cell = (805) 450-2890
|email = hopkins@ece.ucsb.edu
}}

=About=
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.

=Current Work=
Aidan is the Facility Staff Manager of the Nanofab. Contact Aidan with any facility related issues.

=Tools=
Aidan Hopkins is in charge of the following tools:
{|
|- valign="top"
| width="300" |
*[[Vacuum Sealer]]
*[[Dicing Saw (ADT)]]
*[[Wire Saw (Takatori)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Molecular Vapor Deposition]]
*[[Plasma Activation (EVG 810)]]
||
*Wet Benches
**[[Acid Benches]]
**[[Solvent Benches]]
**[[Photoresist Spin Coat Benches]]
**[[Develop Wet Benches]]
|}

Aidan Hopkins

2021-07-13T15:30:01Z

Hopkins a:

{{staff|{{PAGENAME}}
|position = Facility Staff Manager
|room = 1109B
|phone = (805) 893-2343
|cell = (805) 450-2890
|email = hopkins@ece.ucsb.edu
}}

=About=
Aidan moved to Santa Barbara in 2000 to attend college at UCSB. During his junior year Aidan was hired part time to help out with the Engineering II cleanroom. Over the next year and half Aidan helped with the transition of moving the cleanroom to the Engineering Science Building. Once he graduated in 2005, Aidan was hired on full time as an Assistant Development Engineer. Aidan gained valuable experience supporting the lab on both the equipment and facility side and in 2012 he became a Senior Development Engineer. In 2017 Aidan became the Facility Staff Manager.

=Tools=
Aidan Hopkins is in charge of the following tools:
{|
|- valign="top"
| width="300" |
*[[Vacuum Sealer]]
*[[Dicing Saw (ADT)]]
*[[Wire Saw (Takatori)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Molecular Vapor Deposition]]
*[[Plasma Activation (EVG 810)]]
||
*Wet Benches
**[[Acid Benches]]
**[[Solvent Benches]]
**[[Photoresist Spin Coat Benches]]
**[[Develop Wet Benches]]
|}