UCSB Nanofab Wiki - User contributions [en]

Frequently Asked Questions

2026-07-21T00:48:56Z

John d: /* Publications acknowledging the Nanofab */ added equip and facilities Eng.

'''Email [mailto:NanoFab@ece.ucsb.edu NanoFab@ece.ucsb.edu]''' to contact all the NanoFab staff – one of us will help you as soon as we can!

__TOC__ 

==General NanoFab Questions==

===How do I get access to the lab?===
See the [https://www.nanotech.ucsb.edu/services Services] page and click on the appropriate entity (universtiy/company etc.) to see the process and paperwork needed for your staff to access our lab in-person. The [https://www.nanotech.ucsb.edu/services#comp-k3rx7hk4 hourly rates] are also listed on this page. External universities and companies are welcome to access our lab.

====Can staff perform fabrication for us?====
Yes, for certain types of jobs. [[Services#Fabrication Services by NanoFab Staff|See this page for more info]].

===Who do I contact for an equipment problem or general NanoFab problem?===
For ''general'' NanoFab issues (that affect the whole NanoFab), please contact the [[Brian Thibeault|Lab Director (click for contact info)]] by email or phone.

It's '''much''' better to quickly let us know of a mistake or problem proactively, and let us help you fix it!

====Emergencies====
For immediate or health-related emergencies, call 9-911 from any of the phones in the lab, or 911 from your cell phone. Let them know that you are in '''"Engineering Sciences Building #225"''' at '''"Room #1102 - Gowning Room"'''.

====Specific Equipment Problem====
Always notify maintainers '''''immediately''''' of any unusual problem that may affect other tool users, and also record it in the logbook!

#If you are having trouble with a piece of equipment, please contact the supervisor of that tool '''first'''. The supervisor's contact information can be found posted on the walls above/behind the equipment, on the [[Tool List|tool page]] and on the tool's SignupMonkey page.
##If you need immediate assistance ''during business hours'', you may call/text the tool supervisor's cell phone number, otherwise use their office phone or email.
##If the tool is down, please place a note at the tool in addition to reporting the issue.
#If the engineer is not available, please go to the tool's signup page on [https://signupmonkey.ece.ucsb.edu SignupMonkey] and click the "'''Report a Tool Issue'''" button. This emails all Nanofab Staff ''and'' all users with future reservations ''and'' texts the tool supervisor. This is the preferred method for getting help if the supervisor is not immediately available.
#If the tool is not on SignupMonkey, '''email the NanoFab Staff at [mailto:NanoFab@ece.ucsb.edu NanoFab@ece.ucsb.edu]'''. This emails all staff, so anyone available can help you.

====Contact all NanoFab Staff by Email====
The entire NanoFab staff can be emailed at [mailto:NanoFab@ece.ucsb.edu NanoFab@ece.ucsb.edu]. This allows any staff member who is able to help to respond in a timely manner. Any problem for which you are unsure who to contact, send it to this email address.

====NanoFab On-Call Staff====
For after-hours and weekend emergency situations, please call '''[[Tel:(805) 451-0509|(805) 451-0509]]''' to contact the staff member that is on-call. This is for major issues/emergencies that will affect many users, such as alarms, leaks, wet bench, fume hood issues etc. Please do not call this number for problems with a single process tool that only affects a few users, instead see above.

===After Hours Access===
To enter the facility after hours, please use the '''South-facing''' entrance. There is a card/Symmetry reader on that exterior door.

We DO NOT provide after hours access to the main doors on the West entrance.
===Publications acknowledging the Nanofab===
If you publish on devices or work done using the NanoFab, please add an acknowledgement or line of text stating the following (or similar):<blockquote>''A portion of this work was performed in the UCSB Nanofabrication Facility, an open access laboratory.''</blockquote>This is important for the continued success of the Nanofabrication Facility. This applies to local UCSB researchers as well.

====Authorship on Publications====
If a UCSB staff scientist contributed significant research & development effort (including thinking through fabrication methods), or if you include their data/images in your paper, especially if novel work was developed, you should seriously consider '''adding them as an author''' (while also retaining the above Acknowledgement). Many journals require '''all''' contributing authors to be cited. For example, consider the [https://pnp.ligo.org/ppcomm/Papers.html physics articles with over 1,000 authors], citing ''all'' contributions to the work.

Analysis code authored by staff [https://academia.stackexchange.com/questions/14010/how-do-you-cite-a-github-repository can be cited] if it is on a public repository/online location.

Even for repeat processes performed by our staff, it may be appropriate to include the UCSB Staff member that performed the fabrication - a number of local research groups and companies always include the person who fabricated the devices as authors. Since this is research and development, not a guaranteed off-the-shelf product, every run requires experience to produce good results for your research.

You can specify that the staff member only performed fabrication and process development.

Process knowledge gained from conversations, advice and brainstorming sessions may also constitute significant "intellectual contribution", and warrant authorship, or be worthy of an acknowledgement.

Please consider mentioning equipment engineers and facilities staff that have worked hard to keep your work going!

Feel free to [[Brian Thibeault|contact us]] if you would like to discuss any of these points, and thank you for understanding.

===What Supplies do I need to bring to the lab?===
If you are traveling to use the lab, you should plan to bring your own:

*Optional Cleanroom Toolbelt (our new gowns have no pockets). Two options include:
** [https://www.terrauniversal.com/tool-belt-pocket-49in-waist-white-altessa-grid-uniform-technology-4954-60a.html Uniform Technology Tool Belt] - note the waist size, the 49” belt fits ~36-38” waist or smaller; they have 3 different sizes.
*** We often purchase these with [https://www.terrauniversal.com/tool-belt-pocket-59in-waist-white-altessa-grid-uniform-technology-4954-63a.html one additional pocket].
** [https://www.fishersci.com/shop/products/cleanroom-fannypack-1-ea-white/NC0723118?searchHijack=true&searchTerm=cleanroom-fannypack-1-ea-white&searchType=Rapid&matchedCatNo=NC0723118 HiTEC Fannypack]
*Glassware for chemical processing (developer/water/solvent/acid/base).
**Pyrex required for heating.
**Watch glasses/covers required if heating or leaving unattended.
**Plastic (PP/Polypropylene) or Teflon containers required for HF/KOH.
**Measuring glassware (graduated cylinders etc.)
*Wafers (including Silicon)
*Mask plates for photolithography
*Wafer storage/trays
*Tweezers and hand-tools (scribes)
*Wafer dippers (optional)
*Pens/markers for labeling your items/taking notes.
*Optional Chemical tools:
**Magnetic stirrers,
**Thermometers

The lab provides the following to our users at no additional charge:

*Storage boxes for use within the lab (not to be removed from lab without permission)
*[[Chemical List|Chemicals]] including a selection of photoresists, developers, acids, bases and solvents.
*Metal sources for evaporation and sputter. We don't have every metal, check with staff to see if we have the metal you need.
*Cleanroom-compatible notebooks and paper.
*Ziplock bags, vacuum seal bags & dessicate packets.
*Safety goggles - you are welcome to provide your own as long as they are ANSI Z.87 rated.
*All gowning supplies (hoods/gown/boot covers/masks/gloves etc.)
*Lab Consumables such as napkins, pipettes, tins, razor blades, glass slides, swabs etc.

We highly recommend to take your notes on a digital platform such as tablet/laptop that is portable for use within the lab. Small tablets with pens work very well. <135mm will fit in the cleanroom toolbelts recommended below.

===Can I take supplies from the Nanofab?===
Generally '''NO'''! The napkins, tote boxes, bottles, flashlights, tools and all other supplies are '''nanofab property!''' You are NOT allowed to take any of our supplies to your lab without asking us first. Please do ask staff if there is some supply you'd like to borrow or take, we are usually happy to help.

====Where do I get these supplies for my lab?====
For UCSB users, the [https://www.physics.ucsb.edu/resources/materialsmanagement/storeroom Physics] and [https://www.chem.ucsb.edu/facilities-services#storerooms Chemistry] store rooms sell many common supplies we use, including tweezers, beakers/dishes etc. Otherwise you can search any standard supplier for what you need (Thermo-Fischer Scientific, Mcmaster-Carr, Entegris, Techni-Tool etc. etc.). Ask NanoFab staff if you need something quickly and we can probably help you, or tell you where to purchase the appropriate supplies.

Some common supplies:

* Cleanroom Toolbelt (our new gowns have no pockets); two options include:
** [https://www.terrauniversal.com/tool-belt-pocket-49in-waist-white-altessa-grid-uniform-technology-4954-60a.html Uniform Technology Tool Belt] - note the waist size, the 49” belt fits ~36-38” waist or smaller; they have 3 different sizes.
*** We often purchase these with [https://www.terrauniversal.com/tool-belt-pocket-59in-waist-white-altessa-grid-uniform-technology-4954-63a.html one additional pocket].
** [https://www.fishersci.com/shop/products/cleanroom-fannypack-1-ea-white/NC0723118?searchHijack=true&searchTerm=cleanroom-fannypack-1-ea-white&searchType=Rapid&matchedCatNo=NC0723118 HiTEC Fannypack]
* [https://www.techni-tool.com/product/758TW8104-758TW8104 4-inch wafer tweezers with >200°C PEEK @ Techni-Tool]

===Bring a new chemical/material into the lab===
If you need to bring a new chemical/material into the lab, you '''must ask before doing so'''!

Technically, this includes '''unusual substrate materials'''. We need to make sure we know how to handle, store and dispose of the material, and confirm compatibility/safety.

Here's what you do:

#Check to see if we stock something similar in our [[Chemical List]]. If it's listed there then we have it and you just have to locate it for use. [[Luis Zuzunaga|Luis]] can help you with this.
#Contact [[Brian Thibeault]] and let him know that you will be using this chemical (even if it was previously in the lab), to make sure we are ready for it.
##Check to see if we have an MSDS already - if so, we have previously allowed this in the lab: [[Chemical List]]
##We'll let you know how to store/collect waste for your chemical.
#Make sure you have researched/understand the proper handling and use of this chemical - '''that is YOUR responsibility!'''
#*See the Lab Rules section about this: [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lab_Rules#Chemicals_in_the_Nanofab Lab Rules: Chemicals in the Nanofab]

==Computer/Tech Questions==

=== UCSB NetID Setup ===

* Your UCSB NetID is used for many NanoFab web services.
* You will get and email address and login like '''<code>''YourNetID''@ucsb.edu</code>'''
* It is a Google Account, with GMail and Google Drive access! And we send important emails to this email address.
* '''IMPORTANT:''' '''Email Forwarding Setup:''' Please login to your [http://www.gmail.com gmail.com] email using your ''YourNetID@ucsb.edu'' login, and setup ''Email Forwarding'', to send all emails to your preferred email account.
** Instructions here: [https://support.google.com/mail/answer/10957?hl=en Google: Automatically forward Gmail messages to another account]
* '''Setup a Filter''': To avoid getting too many emails, you can setup a filter in your recipient account to put all ucsb.edu emails into a separate folder
** Instructions here: [https://support.google.com/mail/answer/6579?hl=en Google: Create rules to filter your emails]
** Filter with a rule like <code>To: ''YourNetID''@ucsb.edu</code> to catch all these emails.
** '''Don't ignore these emails, or you might lose cleanroom/tool access by accident!'''

===UCSB NetID Password Reset===
If you need to reset your Net ID password, please do so by going to the following website:

*You need your '''Annex ID''' to reset your password. Your Annex ID was emailed to you when you first got your UCSB NetID. Contact [[Claudia Gutierrez|Claudia]] if you need your NetID Annex ID re-sent to you.
*Got to this website: https://www.im.ucsb.edu/idm/manage
*Select the <code>'''University Affiliate'''</code> option
*Enter your '''Annex ID''' and '''Date Of Birth''' and select <code>'''Reset UCSB Net ID password'''</code>.
*Once you reset your password, you will also need to re-enter this new password in your devices to get access to ''eduroam'' Wifi internet access.

===How do I get my files from the NanoFab computers?===
USB ports are disabled on NanoFab computers to prevent the spread of viruses.

Instead, you can download your files from our '''"Nanofiles" SFTP''' server. As long as you place your files into the proper directory on the tool computer, your files will be synced to the NanoFiles STFP server every hour (or immediately, by running the "''Sync to NanoFiles''" script). You must save into a folder that is named according to your research group/company's name. Exact allowed folder names are found via the below instructions.

For further information on how to access these files, where to place your files (allowed folder names for your Group) and login credentials, do the following:

*Log into [https://signupmonkey.ece.ucsb.edu SignupMonkey]
*Click the '''Files > [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/get-nanofiles.cgi Request Login Credentials]''' link.
*The email you receive will give you instructions on accessing/syncing to the NanoFiles server, including acceptable folder names you can use on the tool computers.
**Remember that ''new folders'' only start syncing to the FTP at ~midnight, and hourly after that. see below for more info.
*You can re-send this email any time by clicking the link on SignupMonkey.
*Please download an FTP ( [https://filezilla-project.org/ Filezilla], [https://winscp.net/ WinSCP], [https://cyberduck.io/ CyberDuck]) program and [[Frequently Asked Questions#I can't connect to the Nanofiles FTP server!|setup the preferences according to this FAQ]] to prevent getting blocked.

====Required Folder Names for Syncing====
Our system requires that your files are stored in a correctly-named folder/directory on the Tool computer, corresponding to your company/group name.

*Click the above "'''[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/get-nanofiles.cgi Request Login Credentials]'''" link, to receive an email that lists the allowed folder names.
*You will '''''not be able to retrieve your files''''' if the folder is incorrectly named or in the wrong location!
*[mailto:NanoFab-it@ece.ucsb.edu Contact our IT staff] if you need help with this, or if need to change the allowed folder names for you.

====When will my FTP folder/files show up?====
The first time you create a folder for your group on a tool (or if you change the folder name), the server will only link to the new folder around midnight that night. So you’ll have to wait until the next morning for the tool to show up in your SFTP sessions

After your folder has been created, the files will automatically sync every hour.

We also have a shortcut on the tool desktops to sync immediately if needed. Run the "''Nanofiles Sync''" shortcut on the desktop to perform the sync right away - your files will be available on the FTP server after that completes.

====I can't connect to the Nanofiles FTP server!====
'''Symptom''': Your SFTP client is suddenly unable to connect to the nanofiles server, with an error like "''Network Error: Connection Refused''". This may also affect other people on the same network as you (who share the same external IP address.)

'''Cause:'''

There are two ways your IP address can be automatically blocked:

#You use the wrong password a few times, or
#Your FTP program tries to make too many connections, so fast that it looks like a [https://en.wikipedia.org/wiki/Denial-of-service_attack DDOS attack] and you get blocked. This may happen when you try to download many files at once.

'''Solutions''':

Email [mailto:nanofab-it@ece.ucsb.edu NanoFab-IT] and request that you be unblocked. To prevent this going forward, here are some tips:

#Many FTP clients have the option to use "''multiple connections''" or "''simultaneous downloads''", which often gets your blocked''.'' Set it to use '''maximum 3 connections''' (which means that you can Browse the folders while downloading two files). Turn off any options that look like they might open more than one connection to the server.
#Also turn off any "'''''Retry X number of times'''''" options.
##See these links for limiting the number of connections for [https://support.hostgator.com/articles/how-to-limit-the-number-of-simultaneous-connections-in-filezilla Filezilla], [https://winscp.net/eng/docs/transfer_queue WinSCP], [https://blog.cyberduck.io/2015/04/17/multiple-connections-for-file-transfers/ CyberDuck].
##'''''WinSCP''''', in particular (and maybe Filezilla), '''DEFAULTS''' to use an unlimited number of connections - so the first time you try to download many files at the same time you will likely get blocked. See the above links to prevent that.
##'''''WinSCP''''' has TWO settings you need to reduce - one under the Bookmark/Connection settings, the other in the main Program Settings/Options. Look carefully for anything that would allow multiple connections or multiple retries and reduce/disable them.
##'''CyberDuck''' has multiple Preferences settings you need to change; in the '''Preferences''':
###Transfers > General > Transfer Files: '''Open single connection'''
###Connection > ''UNcheck'' [_] '''Repeat failed networking tasks'''
#Save your password on your computer with a password manager.
##Your FTP client may also be set to try many "''reconnection attempts''" very fast. If the saved password is wrong, it will quickly reach the limit of authentication failures, and block your IP. Set your FTP client to never retry on failure, just in case it is due to a bad password.

===Wifi Access in the Nanofab===
The Wifi networks "'''''UCSB Secure'''''" (preferred) and "'''''UCSB Wireless'''''" (will ask for login every time) and "'''''eduroam'''''" (also works for other educational institutions) have full coverage in the NanoFab. All UC students/employees can use their NetID's to access these networks (although ''EduRoam'' the full UCSB email address like this ''YourNetID@ucsb.edu'' as your username).

External institutions can request a login from [[Brian Thibeault]].

====Cell Phone Calls====
Verizon Wireless has three cellular repeaters installed in the cleanroom, available via UCSB agreements with the vendor.

Cellular coverage is still not very good in some parts of the lab. However, Wifi Calling (aka. [https://en.wikipedia.org/wiki/Voice_over_IP VoIP]) works very well if your device is connected to one of the aforementioned Wifi (not cellular) networks. You can set your smartphones to make voice calls over Wifi, as long as your cellular carrier supports this. Then when you initiate the call from a region you intend to work from, your device should automatically choose Wifi calling if it has the best coverage. Calling through your computer (eg. online teleconferencing) will also utilize the Wifi network rather than cellular.

"Wifi calling" is often not enabled by default, enable it as follows:

*[https://support.apple.com/en-us/HT203032 Apple iPhone/iOS Wifi Calling setup instructions]
*[https://support.google.com/voice/answer/7649189?co=GENIE.Platform%3DAndroid&hl=en Google Android OS Wifi Calling setup instructions]

It is recommended to use the WiFi network "'''''eduroam'''''" for uninterrupted Wifi-Calling performance, although "UCSB Secure" also works.

====Forcing Calls to use Wifi (not Cellular)====
''Sometimes your mobile device continues to use Cellular even though the signal is weaker than Wifi. The following forces your device to use Wifi only, by disabling the Cellular antenna.''

*Turn on "Airplane Mode" to disable the main cellular antennas.
*While still in Airplane Mode, enable Wifi, and Bluetooth if using BT headphones.
**Connect to the UCSB Wifi Network, and BT devices if desired.
*Place your call as usual - if WiFi Calling is enabled, the call will use Wifi.
**This applies to using internet calls as well, like WhatsApp, Skype, Facetime, Zoom etc. - your phone ''may'' try to use the cellular connection for internet unless you disable it.
*It can take up to 1min after enabling Wifi, for your phone to enable Wifi-Calling. Typically a symbol like "VZW Wi-Fi" or "VoLTE" indicates that Wifi-Calling is enabled.
*When entering or leaving the cleanroom, it may be necessary to dis/reconnect your Wifi antenna in order to enable Wifi-Calling properly, due to your device switching between servers. All antennas in our cleanroom are on a mesh network, for uninterrupted calls throughout the lab.

===Can I add equipment reservations to my phone/computer/online calendar?===

*Yes, log into SignupMonkey, and on the "Future Reservations" column on the right, click on the "iCalendar" link. This links to a ".ics" file that lists all your upcoming equipment reservations. Open this file to add the reservations to your calendar. [[File:SignupMonkey - Add to Calendar - Screen Shot 2017-11-30 at 3.55.11 PM.png|alt=Image showing the iCalendar ".ics" file link on SignupMonkey|none|frame|The "iCalendar" (.ics) file link on SignupMonkey]]Unfortunately deleted reservations will Not be removed from your calendar, because of the difficulty with CalDAV programming. I recommend having a separate calendar that you save your reservations onto.

====Programmatically Accessing Reservation Data====

*To get a URL for accessing reservation data using a program, you can simply copy the URL to the *.ics iCal file mentioned above. This URL contains encrypted login info, so returns the *.ics file without requiring the GUI login form. You can get such a URL of your own future reservations as mentioned above. You can also get a custom search (for example all the future/past reservations from your research group) from the "''Search''" section of Signup Monkey. The results page of any search includes a link at the top for the corresponding iCal file - copy that URL to use in your program/scripts.

==Processing/Fabrication Questions==

===I need help using a tool, where do I get help?===
There are so many little details to remember in the cleanroom, we all sometimes forget something or need a reminder. When in doubt, ask for help!

*First, check to see if printed instructions are found at the tool itself.
*Second, check the Wiki page for that tool - many of our instruction sets and user manuals are posted on the [[Tool List|Tool page]] in the Equipment section (see the left side bar).
*Third, during business hours (eg. 7am-6pm) you can contact the tool maintainer. Contact info is posted on the glass walls above each tool.
*Fourth (maybe first) option, look for an experienced user in the lab who might be able to help. Our users are typically very collaborative, knowledgeable and helpful! A senior member of your group is always a good option.

====User Manuals====
You can find user manuals for many of our tools, and software. Often times these are either

*Printed at the tool itself
*In a PDF on the desktop of the tool's computer
*On the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Frequently_Asked_Questions#How_do_I_get_my_files_from_the_NanoFab_computers.3F Nanofiles FTP] server in the "Manuals" folder. For example, complex analysis software such as the [[Ellipsometer (Woollam)|Ellipsometer]] and [[Atomic Force Microscope (Bruker ICON)|AFM]] manuals are available on Nanofiles FTP.

===Where do I find a recipe for a process (litho/etch/dep etc.)?===
The "''Recipes and Data''" section on the left sidebar lists the different categories of recipes. In those pages, you can see whether a recipe exists for your process, and on which tool. We often include some basic characterization data on the recipes, but you should note that these are approximate only. '''''If you have tight tolerances, you need to characterize the recipe yourself''''' (ie. figure out deposition/etch rate, selectivity, verticality etc.).

For some recipes (etches in particular), we often post the parameter variations/recipe characterizations to show you how different recipe variables affect the etch. If you find that a provided recipe isn't exactly what you need, you can use this information to modify a copy of the recipe to suit your own needs. Please refer to the tool owner for creating your own recipes on each tool, especially for those that have a limited number of saved recipe slots.

Many datasheets provide very usedul process info. For example, the datasheets for lithography photoresists/developers and solvents usually show spin curves (thickness vs. spin speed), exposure dose, bake times, resist profile vs. reflow temp etc.

You can find photolithography datasheets on the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Chemical_Datasheets Chemical Datasheets] section of the Lithography Recipes page.

=== [[Processing - How Do I…?]] ===
The above page attempts to answer common fabrication questions that we have seen arise in user's fab processes.

===A recipe is indicated as "A" (Available) or "R1" Rank #1 (done once); where do I find info on this recipe?===
If a recipe is marked as "A", ''Allowed'' on one of the recipe tables, this usually means that a graduate student has done this process at some point, but the NanoFab hasn't necessarily verified the process nor has the exact recipe and characterization. Contact anyone in the [[Staff List#Process Group|Process Group]] to get in contact with the research group that developed the recipe.

===My Glassware/supplies are missing, how do I get them back?===
Staff will occasionally collect glassware and supplies that are left out on the bench, after ensuring that the users (as indicated by the glassware labels) are not in the lab. The collected supplies are stored in a locked cabinet in Chase 4.

'''Any staff''' can return your glassware - ask any staff to return your glassware. Staff will record the date/time of the collection, and your group may potentially be charged for the staff time.

Please see the full policy collection here:

[[Lab Rules#Glassware%20Confiscation%20Policy|Lab Rules > '''Glassware Confiscation Policy''']]

==Wiki Questions==
NanoFab users are highly encouraged to contribute their own work, characterizations and corrections to our Wiki! Read on to learn how to do this.

===How do I get a login to the wiki?===
If you have an active [https://signupmonkey.ece.ucsb.edu/ SignupMonkey] login, then you can create a Wiki login yourself.

*Just click the "[https://wiki.nanotech.ucsb.edu/w/index.php?title=Special:CreateAccount Create an Account]" link in the corner of the page,
*Fill in your info, making sure you '''''use the same email address you use for SignupMonkey.'''''
*Then click the link in the confirmation email you receive.
*You will then be able to log in and edit many of the wiki pages. We encourage you to make updates or add your processes!

Contact the [[Wiki Admin]] if you need help.

===How do I edit a page?===
First, you need to login by clicking the “Log In” link in the top-right corner of the page.

Then you simply click ''[Edit]'' on a page you wish to change. The ''[Edit]'' option will only be available for pages that you are authorized to change, which does not include all pages.

''[Edit]'' brings up the ''Visual Editor'', which allows you to type directly into a page without editing any code, like using a regular word processing program. The Visual Editor is the recommended method. Alternatively, ''[Edit Source]'' will show you the wiki markup code for the page, which is also an acceptable way to edit a page but much less intuitive.

Please see the [[Editing_Tutorials|Editing Tutorials]] for more information on editing a page.

Note that NanoFab users are only allowed to edit certain pages, and have some restrictions on their accounts for security purposes. However we do encourage all updates and changes, so please contact the [[Wiki Admin]] if you need help, such as making a new page, uploading images etc. The giant materials/recipe tables are only editable by Admins, so let us know if you have a new recipe/material to add!

==="''Something went wrong''" while saving my edits! How do I keep my edits?===
Sometimes the server will log you out after a long time, even while you are still editing a page!

Then when you try to save the page you might get an error like "'''''Something Went Wrong: We could not save your edits because the session is no longer valid...'''''".

If this happens, DO NOT CLOSE your edited page or you may lose your edits! Instead do the following:

#Hit "Resume editing" on the edited page, to close the "Save Page" dialogue.
#Open a NEW web browser window,
#Go to the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Special:UserLogin NanoFab wiki] in that new window,
#[https://wiki.nanotech.ucsb.edu/w/index.php?title=Special:UserLogin Login to the wiki] on that window (you can click the link to go to the Login page directly)
#On your edited page, Click "'''Save Page'''" again, and after dismissing the error click "'''Try Again'''". You may need to press '''Try Again''' a few times until it figures out that you have logged in, and it will then save your edits.

===What do I do if I find an error on the wiki?===
If you locate a mistake, error or typo, log in and make the change yourself, or let staff know. Staff will see your edits and approve them.

If you don't have edit permission, let [mailto:demis@ucsb.edu Demis] know about the change you wish to make.

===Why aren't my edits showing up?===
While lab users are allowed to edit the wiki, all those edits will be approved by a staff member before going live.

Maskless Aligner (Raith PicoMaster XF)

2026-07-18T19:03:42Z

John d: added WIP notices

{{tool2|{{PAGENAME}}
|picture=XYZ.jpg
|type = Lithography
|super = Biljana Stamenic
|super2 = Lee Sawyer
|location = Bay 6
|description = Direct-Write (Maskless) I-Line Photolithography
|manufacturer = ?
|model = ?
|toolid=?
|materials = I-Line Photoresists
}}
{{ToolActions|
|toolid = ?
|InstructionsURL =
|ProcessControlURL =
|TrainingURL = ?
}}
{{WIP}}

==About==
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.

The system has a continuous, automatic autofocus, using optical and pneumatic detection of the substrate surface.

The software allows for custom drawings and alignment marks to be exposed onto any feature located on the microscope.

Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file. See the [[MLA150 - Troubleshooting#Greyscale Lithography Limitations|Greyscale Limitations page]] for more info.

The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.

[[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See [https://heidelberg-instruments.com/key-features/maskless-laser-lithography/ HIMT] for more info.]]

==Detailed Specifications==
{{WIP}}
*Maximum Writeable Area: 150 x 150mm
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces
**''Contact staff for pieces < 5 mm.''
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
*Exposure optics:
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]
**Laser #1: 375nm
**Laser #2: 405nm
**Lens NA = 0.95
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
*Write Grid (Address Unit):
**High Quality Mode (std.): 40nm
**Fast Mode: 100nm

*Additional manufacturer options:
**High-resolution option (Write Mode 1)
**Extended Focus Range
**Variable Focal Depth
**Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
**Greyscale Mode
**(No backside alignment)

==Operating Procedures==
{{WIP}}

===Standard Operating Procedures===

*[https://wiki.nanofab.ucsb.edu/w/images/7/7b/MLA150_SOP_Rev_N_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
**User manuals ''are available at the tool and on the tool's computer.''
*[https://wiki.nanofab.ucsb.edu/w/images/9/95/MLA150_Quick_Start_Rev_B.pdf MLA150 Quick Start Guide **Experienced Users Only**]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, reflecting allowed sample sizes for each focus mode.

=== Video Training ===
*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e '''Video Training for MLA150''']
**''Bookmarks in the video can point you to specific solutions/procedures.''
**'''UPDATES to the Video Training''': ''please review the addendums below:''
***New software has been installed, the '''[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf SOP]''' shows the newer menu options.
***CRITICAL: There are now TWO locations on which you must choose "Optical Autofocus". Failure to do so can result in system damage.
***[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, which are currently not reflected in the video.
***Numerous solved issues have been added to the [[MLA150 - Troubleshooting|'''Troubleshooting page''']].

=== Special Procedures ===

*[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Calibrating your Process with a Focus-Exposure Matrix (FEM)]] - called ''"Series"'' mode on the MLA
*[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)

===[[MLA150 - Troubleshooting|Troubleshooting & Known Bugs]]===

*''See the above page for troubleshooting/recovery info and workarounds to known bugs.''
*Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact [[Demis D. John|staff]] if you need help with this.

===Training Procedure===
To get authorized on this tool:

#please study the training videos here: '''[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video]'''
#"shadow" experienced users in your group, if you have any, and
#when you are ready, click this button to request training:{{ToolTrainingButton|toolid=32}}

==Design Info - CAD layout==

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''Important info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - ''example CAD designs and useful CAD structures.''

==Recipes==
{{WIP}}
*'''Recipes > Lithography >''' '''[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29|Maskless Aligner MLA150]]'''
**''Starting recipes for various I-Line photoresists''

=== Calibrate your own Litho process ===
* Use '''Series''' mode exposure for doing an FEM ("Focus-Exposure Matrix") on the MLA150.
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM for repeatable processes

Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes|Photolithography Recipes]] page.

Template:News

2026-07-18T19:02:13Z

John d: added Raith PicoMaster

<startfeed />


''News from the U.C. Santa Barbara Nanofabrication Facility.''




=== Raith PicoMaster Direct-Write Installed ===
We have installed a new H-Line (405nm) Direct-write tool: The [[Maskless_Aligner_(Raith_PicoMaster_XF)]]. The new tool is currently undergoing staff qualifications and we are developing operating procedures. // [[User:John_d|Demis D. John]] 19:02, 18 July 2026 (UTC)

===ProtoFab Opening Summer 2026===
The Nanofab is launching a [https://protofab.oasis.ucsb.edu/ Prototyping Facility called the "Protofab"], which is located at [https://oasis.ucsb.edu/ UCSB's new OASIS building]. Learn more at [https://protofab.oasis.ucsb.edu https://protofab.oasis.ucsb.edu]

The new lab will enable taking your diced chips from the Nanofab, to the Protofab where you can wirebond, attach to PCB's/carriers, align+attach optical fibers etc., to make a real "prototype". The lab is expected to open in Summer 2026, with equipment currently being installed.

Access & model is similar to the Nanofab - anyone can pay an hourly fee to go into the Protofab, using key fobs for access. (OASIS "Membership" is ''not required'' to use the Protofab, unless you also want your own desk + private lab space at OASIS.)

Contact the Protofab lab manager [mailto:arin_abed@ucsb.edu Arin Abed] for more information.
// [[User:John_d|Demis D. John]] 19:51, 27 May 2026 (UTC)

===DREAMS Hub awarded 2 projects in GaN and 5G/6G technologies===
[https://viterbischool.usc.edu/news/2024/09/usc-viterbi-led-ca-dreams-hub-is-awarded-31-9-million-in-funding-under-the-microelectronics-commons/ CA DREAMS Hub is awarded $31.9 million in funding under the Microelectronics Commons] -

* $16.2 Million to develop advanced gallium nitride (GaN) semiconductor technologies, with partners including USC, Northrop Grumman, Teledyne Technologies, HRL Laboratories, PseudolithIC, Monde Wireless Inc., Transphorm, UCLA and UC Santa Barbara.
* $15.7 Million in Funding for 5G/6G millimeter-wave Phased-Array Prototypes, with team USC, Northrop Grumman, HRL Laboratories, Teledyne, Caltech, UCLA, UC Santa Barbara, UC San Diego, Vorago, Global Foundries.

// [[User:John_d|Demis D. John]] 16:32, 23 September 2024 (PDT)

===NSF-ATE Award for SBCC and UCSB: New Semiconductor Pathway===
The UCSB NanoFab and CNSI were recently awarded a project by NSF-ATE to build a semiconductor pathway (associates degree or certificate) at Santa Barbara City College, utilizing UCSB Cleanrooms. The project "[https://www.nsf.gov/awardsearch/showAward?AWD_ID=2400982 Expansion of CCPRIME: Central Coast Partnership for Regional Industry-Focused Micro/Nanotechnology Education]" is one of 6 projects funded by an [https://new.nsf.gov/news/nsf-invests-76m-educational-projects-build-skilled Intel-NSF partnership.] The project builds on the existing "[https://nanofab.ucsb.edu/workforce#bootcamps Cleanroom Bootcamps]" already being run twice a year in the [https://www.cnsi.ucsb.edu/facilities/quantum-structures CNSI QSF cleanroom]. // [[User:John_d|Demis D. John]] 13:15, 14 August 2024 (PDT)

===CHIPS Act Award Announced to USC and UCSB NanoFab===
[https://carbajal.house.gov/news/documentsingle.aspx?DocumentID=1672 U.S. Congressman Salud Carbajal congratulates UCSB and the NanoFab] on receiving a [https://www.nist.gov/chips CHIPS & Science Act] award, as part of the [https://microelectronicscommons.org/ California DREAMS Hub (Microelectronics Commons) led by USC].
-- [[User:John d|Demis]] 12:06, 4 October 2023 (PDT)

=== RIE#3 Removed ===
We have removed [[RIE_3_(MRC)|RIE#3]] from the Nanofab, it has gone to the [https://www.ece.ucsb.edu/department-resources/electronics-shop/tcr Teaching Cleanroom]. All user's processes have been transferred to the [[Fluorine_ICP_Etcher_(PlasmaTherm/SLR_Fluorine_ICP)|Fluorine ICP Etcher]]. // [[User:John_d|Demis D. John]] 15:58, 6 August 2024 (PDT)

=== NanoFab staff awarded Goleta's Innovator of the Year 2023 ===
NanoFab staff member [[Demis D. John]] has been awarded the ''City of Goleta's "Innovator of the Year"'' for 2023! The award stems from the UCSB Nanofab's impact on the communities of Santa Barbara County and surrounding regions, in enabling cutting edge technology companies to thrive, which also enables many local careers in advanced high-tech. See the [https://sbscchamber.com/goletas-finest-2023-award-recipients-announced/ full announcement by the Santa Barbara South Coast Chamber of Commerce]. // [[User:John d|Demis D. John]] 13:58, 7 November 2023 (PST)

=== NanoFab Featured in Regional Tech Videos ===
The UCSB NanoFab is showcased as a driver of innovation and enabler of the regional high-tech industry.

See the videos here:
{| class="wikitable"
|[https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false '''''Santa Barbara County: This is TechTopia'''''] [[File:Techtopia_Vid_-_Thumbnail_PlayButton.jpg|none|300x300px|link=https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false]]

|[https://www.youtube.com/watch?v=op746os6eRI '''''UCSB NanoFab: An Innovation Center'''''] [[File:NanoFab_COE_Engineering_Vid_-_thumbnail_2_crop.jpg|none|300x300px|link=https://www.youtube.com/watch?v=op746os6eRI]]
|}

// [[User:John d|John d]] 09:26, 1 November 2023 (PST)




===''[[Template:News_-_Older_Articles|See older articles at this link]]''===
<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Tool List

2026-07-18T18:59:50Z

John d: /* Lithography */ added Raith Picomaster

__NOTOC__
{| class="wikitable" style="width:min-content;"
|
=== Tool Categories ===

* [[:Category:Lithography|Lithography]]
* [[:Category:Vacuum Deposition|Deposition]]
* [[:Category:Dry Etch|Dry Etch]]
* [[:Category:Wet Processing|Wet Process]]
* [[:Category:Thermal Processing|Thermal Process]]
* [[:Category:Packaging|Packaging/Bonding]]
* [[Tool List#Measurement .26 Characterization|Metrology/Test]]
|}

=Lithography=

{|
|- valign="top"
| width="300" |
=====Photoresists and Lithography Chemicals=====

*See the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]

=====Contact Aligners (Optical Exposure)=====

*[[Suss Aligners (SUSS MJB-3)|Contact Aligners (SUSS MJB-3)]]
*[[Contact Aligner (SUSS MA-6)]]
*[[DUV Flood Expose]]

=====Direct-Write Lithography=====

*[[E-Beam Lithography System (Raith EBPG 5150+)]]
*[[SEM 1 (JEOL IT800SHL)|E-Beam Lithography (Nabity v9)]]
*[[Focused Ion-Beam Lithography (Raith Velion)]]
*[[Maskless Aligner (Heidelberg MLA150)]]
*[[Maskless Aligner (Raith PicoMaster XF)]]

=====Other Patterning Systems=====

*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
=====Steppers (Optical Exposure)=====

*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

=====Thermal Processing for Photolithography=====

*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]
*[[Ovens 1, 2 & 3 (Labline)]]
*[[Oven 4 (Fisher)]]
*[[Oven 5 (Labline)]]
*[[High Temp Oven (Blue M)]]

=====Lithography Support=====

*The [https://wiki.nanotech.ucsb.edu/w/index.php?title=Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]
|-
|}

=Vacuum Deposition=

{|
|- valign="top"
| width="300" |
====Physical Vapor Deposition (PVD)====

=====Thermal Evaporation=====

*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[E-Beam 5 (Plasys)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

=====Sputter Deposition=====

*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]
*[[SEM Sample Coater (Hummer)]]

| width="400" |
=====Chemical Vapor Deposition (CVD)=====

*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

=Dry Etch=

{|
|- valign="top"
| width="300" |
=====Reactive Ion Etching (RIE)=====

*[[RIE 2 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]

=====Plasma Etching and Cleaning=====

*[[Plasma Clean (YES EcoClean)]]
*[[Plasma Activation (EVG 810)]]
*[[Ashers (Technics PEII)]]

=====Etch Monitoring=====

*[[Laser Etch Monitoring]] (Endpoint Detection)
*Optical Emission Spectra
*Residual Gas Analyzer (RGA)
| width="400" |
=====ICP-RIE=====

*[[ICP Etch 2 (Panasonic E626I)]]
*[[Oxford ICP Etcher (PlasmaPro 100 Cobra)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

=====Ion Milling and Reactive Ion Beam Etching=====

*[[CAIBE (Oxford Ion Mill)]]
*[[Focused Ion-Beam Lithography (Raith Velion)]]

=====Other Dry Etching=====

*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
*[[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[Wet Benches#Wafer Toxic Corrosive Benches|Wafer Toxic Corrosive Bench]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
*[[Gold Plating Bench]] (Semcon)
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
*[[Mechanical Polisher (Allied)]]
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
*[[Rapid Thermal Processor (SSI Solaris 150)]]
*[[Tube Furnace (Tystar 8300)]]
*[[Tube Furnace Wafer Bonding (Thermco)]]
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
| width="400" |
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]
**[[Ovens 1, 2 & 3 (Labline)]]
**[[Oven 4 (Thermo-Fisher HeraTherm)]]
**[[Oven 5 (Labline)]]
**[[High Temp Oven (Blue M)]]
|-
|}

=Packaging=
''Back-end Fabrication Tools''
{|
|
====Die Singulation / Down-sizing====

*[[Dicing Saw (ADT)]]
*[[Wafer Cleaver (PELCO Flip-Scribe)|Manual Wafer Cleaver (PELCO Flipscribe)]]
*[[Automated Wafer Cleaver (Loomis LSD-155LT)]]

====Other Packaging====

*[[Vacuum Sealer]]
|
====Wafer/Die Bonding====

*[[Flip-Chip Bonder (Finetech)]]

*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
|}

=Measurement & Characterization=
''[https://en.wikipedia.org/wiki/Metrology Metrology], Electrical/Optical Testing and Thin-Film/Materials [https://en.wikipedia.org/wiki/Characterization_(materials_science) Characterization] tools''
{|
|- valign="top"
| width="300" |
=====Optical Microscopy=====

*[[Microscopes|Optical Microscopes]] - ''General Use''
*[[Fluorescence Microscope (Olympus MX51)]]
*[[Deep UV Optical Microscope (Olympus)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
*[[Digital Microscope (Olympus DSX1000)|Digital Microscope #7 (Olympus DSX1000)]]
*[[Suss Aligners (SUSS MJB-3)#Backside Alignment|Near-IR Inspection Scope (MJB-IR)]]

=====Electron Microscopy=====

*[[SEM 1 (JEOL IT800SHL)]]
*[[Field Emission SEM 2 (JEOL IT800SHL)|SEM 2 (JEOL IT800SHL) w/ EDAX]]
*[[SEM Sample Coater (Hummer)]]

=====Topographical Metrology=====

*[[Step Profilometer (KLA Tencor P-7)]]
*[[Step Profilometer (DektakXT)]]
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |

=====Thin-Film/Material Analysis=====

======Thickness + Optical Constants======

*[[Ellipsometer (Woollam)]]
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]

======Electrical Analysis======

*[[Probe Station & Curve Tracer|Probe Station & Source/Meter Units]]
*[[Resistivity Mapper (CDE RESMAP)]]
*[[IR Thermal Microscope (QFI)|Thermal HotSpot IR Microscope (QFI)]]

======Other Properties======

*[[Film Stress (Tencor Flexus)]]
*[[Surface Analysis (KLA/Tencor Surfscan)|Particle Counts (KLA/Tencor Surfscan)]]
*[[Photoluminescence PL Setup (Custom)]]
|-
|}

== [[Decomissioned Tools]] ==
Click the link above for a list of tools that are no longer available in the lab, but the data is retained for legacy purposes.

Maskless Aligner (Raith PicoMaster XF)

2026-07-18T18:59:16Z

John d: pasted MLA150 text

{{tool2|{{PAGENAME}}
|picture=XYZ.jpg
|type = Lithography
|super = Biljana Stamenic
|super2 = Lee Sawyer
|location = Bay 6
|description = Direct-Write (Maskless) I-Line Photolithography
|manufacturer = ?
|model = ?
|toolid=?
|materials = I-Line Photoresists
}}
{{ToolActions|
|toolid = ?
|InstructionsURL =
|ProcessControlURL =
|TrainingURL = ?
}}
==About==
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.

The system has a continuous, automatic autofocus, using optical and pneumatic detection of the substrate surface.

The software allows for custom drawings and alignment marks to be exposed onto any feature located on the microscope.

Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file. See the [[MLA150 - Troubleshooting#Greyscale Lithography Limitations|Greyscale Limitations page]] for more info.

The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.

[[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See [https://heidelberg-instruments.com/key-features/maskless-laser-lithography/ HIMT] for more info.]]

==Detailed Specifications==

*Maximum Writeable Area: 150 x 150mm
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces
**''Contact staff for pieces < 5 mm.''
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
*Exposure optics:
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]
**Laser #1: 375nm
**Laser #2: 405nm
**Lens NA = 0.95
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
*Write Grid (Address Unit):
**High Quality Mode (std.): 40nm
**Fast Mode: 100nm

*Additional manufacturer options:
**High-resolution option (Write Mode 1)
**Extended Focus Range
**Variable Focal Depth
**Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
**Greyscale Mode
**(No backside alignment)

==Operating Procedures==

===Standard Operating Procedures===

*[https://wiki.nanofab.ucsb.edu/w/images/7/7b/MLA150_SOP_Rev_N_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
**User manuals ''are available at the tool and on the tool's computer.''
*[https://wiki.nanofab.ucsb.edu/w/images/9/95/MLA150_Quick_Start_Rev_B.pdf MLA150 Quick Start Guide **Experienced Users Only**]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, reflecting allowed sample sizes for each focus mode.

=== Video Training ===
*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e '''Video Training for MLA150''']
**''Bookmarks in the video can point you to specific solutions/procedures.''
**'''UPDATES to the Video Training''': ''please review the addendums below:''
***New software has been installed, the '''[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf SOP]''' shows the newer menu options.
***CRITICAL: There are now TWO locations on which you must choose "Optical Autofocus". Failure to do so can result in system damage.
***[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, which are currently not reflected in the video.
***Numerous solved issues have been added to the [[MLA150 - Troubleshooting|'''Troubleshooting page''']].

=== Special Procedures ===

*[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Calibrating your Process with a Focus-Exposure Matrix (FEM)]] - called ''"Series"'' mode on the MLA
*[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)

===[[MLA150 - Troubleshooting|Troubleshooting & Known Bugs]]===

*''See the above page for troubleshooting/recovery info and workarounds to known bugs.''
*Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact [[Demis D. John|staff]] if you need help with this.

===Training Procedure===
To get authorized on this tool:

#please study the training videos here: '''[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video]'''
#"shadow" experienced users in your group, if you have any, and
#when you are ready, click this button to request training:{{ToolTrainingButton|toolid=32}}

==Design Info - CAD layout==

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''Important info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - ''example CAD designs and useful CAD structures.''

==Recipes==

*'''Recipes > Lithography >''' '''[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29|Maskless Aligner MLA150]]'''
**''Starting recipes for various I-Line photoresists''

=== Calibrate your own Litho process ===
* Use '''Series''' mode exposure for doing an FEM ("Focus-Exposure Matrix") on the MLA150.
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM for repeatable processes

Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes|Photolithography Recipes]] page.

RIE Etching Recipes

2026-07-17T03:13:19Z

John d: /* Photoresist and ARC (RIE 5) */

{{recipes|Dry Etching}}
=[[RIE 2 (MRC)]]=
==CdZnTe Etching (RIE 2)==

*[//wiki.nanotech.ucsb.edu/w/images/f/f5/11-CZT_etching-1.pdf CdZnTe Etch Recipes - CH4-H2-Ar]

==ZnS Etching (RIE 2)==

*[//wiki.nanotech.ucsb.edu/w/images/b/b4/ZnS_Plasma_Etch-1.pdf ZnS Etch Recipe - CH4-H2-Ar]

==ITO Etching (RIE 2)==

*[//wiki.nanotech.ucsb.edu/w/images/f/f4/RIE2-ITO-Etch-MHA-Plasma-RevA.pdf ITO Etch Recipes - CH4-H2-Ar]

==InP-InGaAsP-InGaAlAs Etching (RIE 2)==

*[//wiki.nanotech.ucsb.edu/w/images/6/6f/RIE2-InGaAs-InP-InAlAs-Etch-Plasma-RIE-RevA.pdf InP-InGaAsP-InAlGaAs Etch Recipes - CH4-H2-Ar]

=[[RIE 5 (PlasmaTherm)]]=
==AlGaAs\GaAs Etching (RIE 5)==

*[//wiki.nanotech.ucsb.edu/w/images/b/b5/13-GaAs-AlGaAs_Etching-RIE-5.pdf GaAs\AlGaAs Etch Recipes - BCl3-SiCl4]

==GaN Etching (RIE 5)==

*[//wiki.nanotech.ucsb.edu/w/images/c/cb/08-Plasma_Etching_of_GaN-RIE5.pdf GaN Etch Recipes - Cl2-BCl3-Ar]

==Photoresist and ARC (RIE 5)==

===DUV42P (AR2) etching===

*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
*No need to pump/purge, can etch right away
*No helium cooling
*Can run in manual mode

Direct-Write Lithography Recipes

2026-07-17T03:11:48Z

John d: /* Positive Resist (MLA150) */ moved 955-0.9 and comment that it's used for lithocals

[[category: Lithography]]
[[category: Recipes]]
__TOC__

==[[Maskless Aligner (Heidelberg MLA150)]]==
For CAD design tips and requirements, see these pages:

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc.

Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.

'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

'''Note:''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

===Positive Resist (MLA150)===
''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].''

Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm, 30s
|95°C, 60s
|~ 1.1 µm
|405
|240
|5
|
|''none''
|AZ400K:DI 1:4
|50s
|Used HIMT design (good for isolated lines 0.8-1um)
|-

|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm, 30s
|95°C, 60s
|~ 3.3 µm
|405
|320
|6
|
|''none''
|AZ400K:DI 1:4
|90s
|Used HIMT design
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4620]]
|
|
|
|
|
|
|
|
|
|
|
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]]
|3 krpm, 30s
|95°C, 90s
|~ 0.9 µm
|405
|250
| - 7
|
|110°C, 90s
|AZ300MIF
|60s
|Used by UCSB Staff for tool calibrations/process control.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
|4 krpm, 30s
|95°C, 90s
|~ 1.8 µm
|405
|210
|10
|
|110°C, 90s
|AZ300MIF
|60s
|Used UCSB design (1um dense lines)
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]
|2.5 krpm, 30s
|115°C, 90s
|~ 2.7 µm
|405
|325
| - 4
|
|115°C, 90s
|AZ300MIF
|60s
|Used HIMT design. 0.6-0.9µm line/space.
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~550mJ
| -20
|>1hr
|115°C, 90s
|AZ300MiF
|70s
|Rehydration after exposure is necessary, to prevent bubbles at PEB.
|-
|[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]
|1.5 krpm, 45s;
250 rpm/s
|100°C, 60s
|0.430µm
|405
|180–220
|<nowiki>-4</nowiki>
|
|100°C, 60s
|AZ300MiF
|20s
|~0.4nm line/space:

lower dose for clear-field, higher dose for dark-field.
|-
| colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop
|}

===Negative Resist (MLA150)===
''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.''

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser (nm)
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |DeFocus
! width="75" |PEB*
! width="75" |Flood**
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm, 30s
|95°C, 60s
|~ 1.0 µm
|375
|35
| - 5
|110°C, 60s
|60"
|AZ300MIF
|60s
|Used UCSB design. Good for up to ~1.3um open line space.
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|4 krpm, 30s
|110°C, 60s
|~ 2.1µm
|375
|340
| - 3
|110°C, 60s
|''none''
|AZ300MIF
|90s
|Used UCSB design. Good for 2um open line space.
|-
|[[Media:SU-8-2075-revA.pdf|SU-8 2075]]
|
|
|~70µm
|375
|
|
|
|
|
|
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
|-
| colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

===Greyscale Lithography (MLA150)===
''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="75" |Bake
! width="75" |Thickness
!Laser
! width="125" |Exposure Dose (mJ/cm2)
! width="100" |Focus Offset
!Rehydrate*
! width="75" |PEB**
! width="100" |Developer
! width="125" |Developer Time
!Reflow***
! width="300" |Comments
|-
|[[Media:Az p4620 photoresist data package.pdf|AZ4620]]
|? krpm/30”
|95°C, 60”
|
|
|
|
|
|
|AZ300MIF
|60s
|
| align="left" |''To Be Added''
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]]
|3.5 krpm, 30s
|105°C/2min
Cool 1min
|~ 7.0µm
|375
|~624mJ to clear large mm-area,
520mJ to clear ~5µm lines.
| -20
|≥1hr
|115°C, 90s
|AZ300MiF
|70s
|TBD
|Author Credit:
*Patrick Curtis, 2022
*Biljana Stamenic 2023
*Demis D. John 2023
|-
|
| colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].
|-
| colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
|}

== [[E-Beam Lithography System (Raith EBPG 5150+)|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

=== Electron Beam Resists Available ===
EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
**Very good resolution (down to the 40-50nm range) and sensitivity
**Exhibits excellent dry-etch resistance
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
**Extremely good resolution (features below 10nm can be resolved)
**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
**Sensitivity and contrast are very dependent on developer solution used and are usually poor
***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
**UV6 used mostly in optimized t-gate resist structures
**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
**Can be "double exposed" by [[Stepper 3 (ASML DUV)|ASML DUV Stepper]] and EBL.
***Recommended to produce ASML alignment marks first for double exposure methods.
**See ASML litho recipes for datasheets.

=== EBL Exposure Recipes ===
'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

Services

2026-07-15T21:11:11Z

John d: /* Fabrication Services by NanoFab Staff */ simplifications and minor updates.

[[Category:Services]]
''Procedures and paperwork to get '''your students/employees''' into the NanoFab.''

''If you are looking for '''fabrication services by NanoFab staff''', please see [https://wiki.nanotech.ucsb.edu/wiki/Services#Fabrication_Services_by_NanoFab_Staff this section].''

''Hourly rates can be found on [https://www.nanotech.ucsb.edu/services#comp-k3rx7hk4 this page].''

Please choose the appropriate section:

__TOC__


 

==Lab Orientation==
The lab orientation takes between 1-2 hours and is scheduled based on new user demand.

The orientation will explain actual lab use, equipment scheduling and trainings, discuss safety policy, enter users into the access system, tour the gowning room area and explain any questions about lab or tool use. Please feel free to [[Brian Thibeault|call or email]] to discuss in more detail. See the below sections for the additional info needed to attend a lab orientation.

===Onboarding for out-of-town visitors===
For lab users visiting from out of town, please start your scheduling with us at least 3-4 weeks in advance so we can help you schedule a lab orientation and tool trainings around your planned trip dates, and help make your trip efficient and productive. Contact [[Demis D. John|Demis]] for advice on which tools to get trained on.

==U.C. Santa Barbara Researchers==
'''Applies to:''' UCSB faculty, post-docs, graduate students, undergraduates, interns etc.

*Contact the [[Brian Thibeault|Lab Director, Brian Thibeault]] for lab access.

==Industry and non-U.C. Academic Institutions==
'''Applies to:''' Employees of Companies (for-profit), and researchers from Universities/Academic Institutions that are '''''not''''' part for the University of California system. This includes Government research labs in any country.
'''<big>Follow ALL instructions below:</big>'''

If you think your institution has previously sent people to use our lab, some of this paperwork may already be in place. Contact the [[Brian Thibeault|Lab Director]] to find out if that is the case.

====Paperwork for new Institutions (Non-UC)====
For new institutions to gain access to the UCSB Nanofabrication Facility, please provide the following documents. Email the docs to both [[Claudia Gutierrez]] and the [[Brian Thibeault|Lab Director]].

#Submit a [//wiki.nanotech.ucsb.edu/w/images/7/79/Nanofabrication_Facility_Project_Description.xlsx Project Description (download)] (contact info etc.) to the [[Brian Thibeault|Lab Director]].
#Nanofab staff acceptance
#[//wiki.nanotech.ucsb.edu/w/images/a/a2/UCSB-Facilities-Use-Agreement.pdf UCSB Facility Use Agreement (download)] signed by an official company signatory (attached form)
#Provide a General Liability Insurance Certificate
##Commercial Form General Liability requirements:
###Combined Single Limit per Occurrence: $1,000,000
###General Aggregate, Bodily Injury, Property Damage: $2,000,000
### The ''Regents of the University of California'' must be named as an additional insured.
###[//wiki.nanotech.ucsb.edu/w/images/9/96/SampleCOI.pdf An example certificate is attached (download)]. Your certificate should have the same basic format and information as shown. The certificate should be emailed to the [[Brian Thibeault|Lab Director]].
###The CERTIFICATE HOLDER shall be identified as follows:
###:The Regents of the University of California
###:Contracts & Property Office
###:SAASB Bldg., Rm. 3203
###:University of California
###:Santa Barbara, CA 93106-2095
#Provide Proof of Workers’ Compensation Insurance or equivalent coverage. This is required under California state law. If the required certificate of insurance is not received and approved prior to the Facility User's intended use of facility, Facility User shall not be allowed to use University facilities.

====Tasks for each Lab User====
For EACH researcher that will enter the lab, please follow these directions:

#Fill out, sign, and return the [//wiki.nanotech.ucsb.edu/w/images/e/ef/UCSB-Facilities-Use-Blanket-Waiver.pdf UCSB Blanket Liability Waiver (download)] to the [[Brian Thibeault|Lab director]]
#Email [[Claudia Gutierrez]] to request a UCSBNetID (required) and to gain access to the UCSB Learning Center for basic on-line safety training.
#Take the [https://www.ehs.ucsb.edu/training/uc-laboratory-safety-fundamentals-initial-online UCSB EH&S online safety course] once you have gained access.
#Request UCSB Nanofab orientation/training by the [[Brian Thibeault|lab manager]] with review of the lab policy which can be found at the following link: [[Lab Rules|NanoFab Lab Rules]]
#[[Frequently Asked Questions#What Supplies do I need to bring to the lab.3F|Please read this FAQ page (link here)]] for a list of items you may need to bring to the lab for your research.

==Other U.C. Campuses==
'''Applies To:''' Researchers at other University of California campuses, apart from U.C Santa Barbara.
'''<big>Follow ALL instructions below:</big>'''

====Paperwork for new UC institutions====
For new UC institutions to gain access to the UCSB Nanofabrication Facility, please provide the following documents. Send the files to both [[Claudia Gutierrez]] and the [[Brian Thibeault|Lab Director]].

#Submit a Detailed [//wiki.nanotech.ucsb.edu/w/images/7/79/Nanofabrication_Facility_Project_Description.xlsx project description (download)] to [Mailto:nanofab-job-inquiry@ece.ucsb.edu Demis D. John & Brian Thibeault]
#Nanofab staff acceptance
#[[Media:Facility-Use-MOU---Intercampus-UC-User.pdf|Facilities Use - Memorandum of Understanding - Inter-UC Campus Use (download)]] - signed by Individual lab users. [https://wiki.nanotech.ucsb.edu/w/images/7/7c/Attachment_A_-_UCSB_Master_Facilities_Use_Agreement_Labs.pdf Attachment A] Lists UCSB facilities covered by the agreement.

====Tasks for each UC Lab User====
For EACH researcher that will enter the lab, please follow these directions:

#Fill out, sign, and return the [//wiki.nanotech.ucsb.edu/w/images/e/ef/UCSB-Facilities-Use-Blanket-Waiver.pdf UCSB Blanket Liability Waiver (download)] to the [[Brian Thibeault|Lab director]]
#Email [[Claudia Gutierrez]] to request a UCSBNetID (required) and to gain access to the UCSB Learning Center for basic on-line safety training.
#Take the [https://www.ehs.ucsb.edu/training/uc-laboratory-safety-fundamentals-initial-online UCSB EH&S online safety course] once you have gained access.
#Request UCSB Nanofab orientation/training by the [[Brian Thibeault|lab manager]] with review of the lab policy which can be found at the following link: [[Lab Rules|NanoFab Lab Rules]]
#[[Frequently Asked Questions#What Supplies do I need to bring to the lab.3F|Please read this FAQ page (link here)]] for a list of items you may need to bring to the lab for your research.

==Fabrication Services by NanoFab Staff==
''Perform '''fabrication services via NanoFab staff''', instead of your staff/employees entering our lab.''

===Important Info on Fabrication Services===

*[https://www.nanotech.ucsb.edu/services#comp-k3rx7hk4 '''Rates are listed here'''].
**We bill for both "''Use of Facility + Equipment''" '''plus''' "''Dedicated staff support''" time per hour.
**We will only apply '''Academic/Gov't rates''' if the technical contact directing the work is at the academic/gov't institution we have a signed service agreement with.
*You will work directly with [[Demis D. John|Demis]] or [[Staff List#Process Group|his staff]] to accept + schedule the work, if the project is accepted.
**We have limited staff and are not a foundry, and we will only accept jobs that we are capable of performing with success.
**We may be able to suggest other ways to get your devices made in our lab if Staff use is not appropriate for your project.
*There is '''''no guarantee''''' of research results or success in fabrication.
*You will be billed for the Actual time and materials required during the job, regardless of project outcome.
**We can provide only a rough ''estimate'' of time and cost because it's an hourly service, not a "quote".
*We send out bills at the end of each month, with payment expected as Net30; Credit card payments are accepted.
*[[Frequently Asked Questions#Publications acknowledging the Nanofab|Publications Policy]] - fabrication executed by NanoFab Staff is often significant "''intellectual contribution''". [[Frequently Asked Questions#Publications acknowledging the Nanofab|Acknowledgement of NanoFab use]] is required at minimum.

===Request Remote Fabrication Services===
''Submitting jobs for "remote" fabrication services requires the following steps:''

1. Contact us ([Mailto:nanofab-job-inquiry@ece.ucsb.edu?subject=Fab Services Inquiry email us]) to determine project feasibility or ask questions.

2. Nanofab Staff acceptance of project.

====Paperwork for Fabrication Services====
4. Return the [//wiki.nanotech.ucsb.edu/w/images/1/1d/UCSB_Service_Agreement.pdf '''UCSB Service Agreement'''] (download)

*Requires signature from your institution - signature authority required, typically ''not'' the professor or graduate student. Business or Contracts Dept., for example.

*Only one agreement is needed per institution. Ask us to find out if your inst. already has one in place.
*'''UC Users:''' this is not NOT needed.
3. Submit the [//wiki.nanotech.ucsb.edu/w/images/7/79/Nanofabrication_Facility_Project_Description.xlsx '''Project Info and Description Form'''] (download) to [Mailto:nanofab-job-inquiry@ece.ucsb.edu,claudia18@ucsb.edu?subject=Fab+Services+Project+Description Demis D. John and Claudia Gutierrez]

*No signatures required, only project info and contact info for internal billing purposes. A student cal fill this out.
*'''UC Users''' - in the Project Description, you will have to provide a valid Recharge Account number to bill against.
===='''Statement of Work'''====
For each request, please provide a quick PPT/Word/similar doc explaining ''exactly'' what you need done ("SOW"). We will discuss this with you before starting the work, and our staff may use this document to answer questions that come up during processing. Your SOW should include:

*Name your file something unique with a date like: "'''''2024-08''' SiO2 Dep '''v1'''.pptx''"
**We use the approx date as your BatchID
**Revisions will update only the ''v1/2/3'' number, but keep the BatchID the same.
*How many wafers to run and/or number of samples to be provided.
**Sample ID's/numbering is highly recommended if appropriate.
*Size/Shape of samples. Eg. "''4-inch wafers''" or "''irregular ~1cm pieces''"
*Exact processing steps to perform. Staff will assist filling in any missing details.
**Please clearly state which steps UCSB Staff will perform, versus steps your staff will perform, if needed.
*Targets and acceptable tolerances for the main steps, eg. "''Deposit 500nm of SiO2, acceptable range 450-550nm (±10% tolerance)''".
**It is common to '''not know the tolerance''' for research devices, so just leave that out and a "best effort" is usually acceptable.
**Note that tight tolerances (<<10%) will require us to run additional calibrations at your expense, so please choose a tolerance that you know is ''required'' for your devices to work.

===== Example SOWs =====
For some tools the programming/instructions can be fairly complex - below are examples for tools that require more detailed instructions:
*[https://docs.google.com/presentation/d/1mx8Jxu_4v2PnNiwqXvni8I1i4NWoCFMb?rtpof=true&usp=drive_fs Basic SOW example PPT: "''2025-09-15 InP Deep Etch v1.pptx''"].
*An example PPT for Stepper lithography jobs can be found here: [[Media:UCSB ASML DUV Stepper - Programming Worksheet.pptx|UCSB_Stepper_-_Programming_Worksheet.pptx]]
*An example PPT for Dicing (die singulation) can be found here: [[Media:Dicing - Example Dicing Instructions for UC Santa Barbara v2.pptx|Dicing - Example Dicing Instructions for UC Santa Barbara v2.pptx]]

Contact Aligner (SUSS MA-6)

2026-07-15T00:07:05Z

John d: /* Operating Procedures */ removed "in progress"

{{tool2|{{PAGENAME}}
|picture=ContactAligner.jpg
|type = Lithography
|super= Lee Sawyer
|super2= Bill Millerski
|phone=(805) 893-2123
|location=Bay 7
|email=lee_sawyer@ucsb.edu
|description = Mask Aligner/Bond Aligner (MA/BA-6)
|manufacturer = Karl Suss America
|materials =
|toolid=33
}}
{{ToolActions
|toolid = 33
|ProcessControlURL =
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|TrainingURL =
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==About==
This system is a dual-use mask aligner and wafer-bond aligner, used for contact and proximity exposure processes. System is motorized for contact/proximity, microscope objective movement and exposure, with a computer used to display the microscope image for regular and backside alignment overlay. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades.

Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the [[Suss Aligners (SUSS MJB-3)|MJB-3 aligners]].

The system is fitted with visible, motorize, bottom-side optics for back-side alignment capability. Backside alignment is performed with an automated image capture system, at 5x, 10x, or 20x magnification. The backside alignment system takes images of the photomask from the ''underside'', then overlays that image digitally with the wafer face-down, again aligning with the cameras on the underside.

Bonding alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the [[Wafer Bonder (SUSS SB6-8E)|Karl-Suss SB6 system]] - contact the supervisor beforehand so the bond alignment fixturing can be installed.

==Detailed Specifications==

*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics (350 - 450 nm)
*Resolution (per Manufacturer*):
**''<nowiki>*</nowiki> Resolution achieved on 150 mm Si-wafer with 1.2 µm thick AZ 4110''
**Vacuum Contact: <0.8 µm
**Hard Contact: <1.5 µm
**Soft Contact: <2.5 µm
**Proximity (@ 20 µm): <3.0µm

*Topside alignment accuracy: down to 0.5 µm
*Backside alignment accuracy: down to 1 µm
*Stage mechanical accuracy: 0.1 μm (step size)

*Automatic Light Intensity Drift Compensation:
**Channel 1 is calibrated to 9 mW/cm² at 365 nm
**Channel 2 is calibrated to 15 mW/cm² at 405 nm
*Programmable proximity exposure gap of 10-300 µm in 1 µm steps
*Programmable alignment gap of 1 - 999 µm in 1 µm steps
*Stored video imaging for overlay alignment
*Visible Back-Side Alignment System
*Lithography for 1” to 6” diameter wafers - '''6 mm maximum thickness'''
*Pieces down to 5 x 5 mm - Please be aware of the stage movement range: X ± 10mm, Y ± 5 mm
*TSA objective separation: 32 - 160 mm
*BSA objective separation: 15 - 100 mm
*Chuck Sizes:
**1" square (or wafer) and smaller, backside alignment capability
**3" wafer, no backside alignment
**4" wafer, backside alignment capability
**6" wafer, backside alignment capability
*Mask Holder Sizes:
**3"
**4"
**5" mask - can be modified to support a 6" mask but exposure area will still be ~4" diameter (see Staff)
**7"
*Bond alignment for 4” to 6” wafers, integrates with [[Wafer Bonder (SUSS SB6-8E)|SB6 bonder]]
*Other wafer sizes can be discussed with staff

==Operating Procedures==

*[https://wiki.nanofab.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes Back-Side Alignment]
*[https://wiki.nanotech.ucsb.edu/w/images/7/75/MA-6_Exp_Mode_Visual_Aid.pdf MA6 Exposure Mode Information]
*[[MA6 Backside Alignment - Allowed Mark Locations]]
*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]

=== Mask Plate Info ===

* [[Mask Making Guidelines for Contact Aligners|Mask Making Guidelines - Contact Masks]] - how to make litho mask plates for this tool.

*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the UCSB purchasing system.

===CAD Files===
''For designing your mask plates.''

*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds|MA6-FrontBack_AlignMarks_only.gds]]
*[[Calculators + Utilities#CAD%20Layout%20Programs|CAD Layout Programs]]
*[[Calculators + Utilities#CAD%20Design%20Tips|CAD Design Tips]]
*[[Calculators + Utilities#CAD%20Files%20.26%20Templates|CAD Files & Templates]] - alignment markers, verniers and other useful CAD objects

==Recipes==

*Recipes > Lithography > '''[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]'''
**''Also lists the exposure powers.''
*[[Photolithography - Manual Edge-Bead Removal Techniques]]

Automated Coat/Develop System (S-Cubed Flexi)

2026-06-25T17:16:12Z

John d: /* Detailed Specifications */ removed "new" labels

{{tool2|{{PAGENAME}}
|picture=TBD.jpg
|super= Tony Bosch
|super2= Lee Sawyer
|location=Bay 7
|description = Automatic Coat/Bake/Develop
|manufacturer = [https://www.s-cubed.com S-Cubed]
|model = Flexi (Custom)
|type = Wet Processing
|recipe = Lithography
|materials =
|toolid=67
}}
{{ToolActions
|toolid = 67
|ProcessControlURL =
|InstructionsURL = https://wiki.nanofab.ucsb.edu/wiki/Automated_Coat/Develop_System_(S-Cubed_Flexi)#Operating_Procedures
|TrainingURL =
}}
==About==

The S3-Coater is a Coater/Developer system that has one photoresist spinner, one developer spinner and 4 hotplates each with independent temperature control and a chill plate. A central robot picks your wafer/s from one of 2 cassettes, processes them and returns them to the cassette. The system is recipe driven with a high degree of process control and minimal backside contamination, and coats photoresists with low particle counts/streaks and high uniformity.

Only full size 4-inch (100mm) substrates are allowed on this system.

==Detailed Specifications==

*Wafer Size: 100mm
*PR Coating Properties:
**Uniformity < 1.0%
**< 100 particles on 100mm wafer
*Photoresists/Underlayers Available:
**[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8] - DUV Positive imaging resist
**[[Stepper Recipes#DS-K101-304|DS-K101-304]] - DUV bottom anti-reflection layer (BARC).
**PMMA - '''NOT FOR PUBLIC USE AT THIS TIME'''
**PMGI SF11 - '''NOT FOR PUBLIC USE AT THIS TIME'''
**PMGI SF5 - '''NOT FOR PUBLIC USE AT THIS TIME'''
*Solvents Available:
**EBR100 (wafer backside cleaning)
*Developers Available:
**[https://wiki.nanofab.ucsb.edu/w/images/f/f0/AZ300MIF-Developer-Datasheet.pdf AZ 300 MiF]
*Hotplates Available:
**135°C - for UV6 soft-bake and Post-Exposure Bake
**220°C - for DSK101 BARC soft-bake - dry etchable
**185*C - for DSK101 BARC soft-bake - developable for undercut

==Process Information==

*Recipe Page for S-Cubed Coater: [[Lithography Recipes#Automated%20Coat.2FDevelop%20System%20Recipes%20.28S-Cubed%20Flexi.29|Lithography Recipes > Automated Coat/Develop System Recipes (S-Cubed Flexi]])
*See the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Photolith. Chemicals page] for info on the installed resists.

==Operating Procedures==

*[[S-Cubed Flexi - Operating Procedure|Standard Operating Procedure]] - For running pre-written recipes only.

==Recipes==

*'''Recipes > Lithography >''' [[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|'''Automated Coater Recipes''']] - See all available spin-coat recipes for this machine. Only Staff may edit/create recipes.

UCSB NanoFab Microscope Training

2026-06-24T22:07:33Z

John d: /* Depth Measurements using focus */ added knob turning direction

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.<blockquote>'''Turning the manual focus knob ''towards you'' means the stage moves ''Down'', away from the microscope objective.''' </blockquote>

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "'''Episcopic'''" illumination mode
** Top-side illumination, that is '''reflective'''-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "'''Diascopic'''" illumination mode
** Back-side illumination, that is '''transmission'''-mode imaging (light is transmitting from the back to top of your sample).
** Only microscopes with a transparent Glass stage can support Diascopic mode illumination.
The Nikon scopes use a single illuminator for this, so only one brightness control knob, fast to switch between each mode.

The Olympus Fluoroscope has a separate illuminator for this, so you enable Diascopic mode by simply turning on the backside illuminator. This scope therefore allows both and and back-side illumination simultaneously.

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on the Nikon Eclipse Microscope #4. ]]<gallery widths="400" style="border: 2px;" mode="packed" heights="150" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) for checking a through-wafer etch.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

Autostep 200 Mask Making Guidance

2026-06-18T00:10:56Z

John d: /* Mask Layout */ bolded the mask limits

__TOC__

== Stepper Mask Tutorials ==
If you are new to stepper masks, please see these tutorials before starting your design.[[File:Stepper Reticle Tutorial - Reticle Masking Schematic.png|alt=Schematic of stepper blocking off adjacent Images on reticle and exposure onto different wafer locations.|thumb|'''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Click for Stepper Reticle Tutorial]''' Stepper Reticle Patterns (“images”) can optionally be much more sophisticated and flexible than contact plates.|link=https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]]

* '''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Stepper Reticle Layout vs Wafer Layout (Demis D. John)]''' ''-'' explains how Stepper mask layout is very different than other litho systems.
* '''[[Stepper Reticle Layout (Advanced) - Complex Experiments and Variations]]''' - If you need many design variations on your wafer.

==Photomask Ordering Info==

*Plate Material: Soda-Lime or Quartz / Chrome
*Dimensions: 5" x 5" x 0.090"
*Magnification: 5x (assuming CAD file shows on-wafer patterns)
*Right Reading if Chrome is Down (assuming CAD file shows on-wafer patterns)
*Barcode is optional, but recommended. Max number of characters for GCA barcodes is 10
*Instruct vendor that design is for a "'''''GCA AutoStep200 with 5x reduction'''''".
*You can insert your design into the photomask template yourself (below) with no barcode, or ask the vendor to insert your 1x (wafer-scale) design into the appropriate GCA template and they can add a barcode.
*'''[[Photomask Ordering Procedure for UCSB Users]]''' - see this page for how to submit your order into the purchasing system.
**Request our negotiated quote (for ACADEMICS ONLY) from [[Demis D. John|Demis]] or [[Brian Thibeault|Brian]].

==Submission Details==
When submitting the photo mask order, the following notes/definitions apply:

#"''Grade''" determines the price, and is chosen based on required feature size (smaller feature size is more expensive). This is found on the vendor's quote, or you ask the vendor for a price based on desired minimum feature size. Although you will submit your CAD file at 1x wafer scale, the actual reticle is printed 5x larger, so make sure to choose your reticle grade accounting for this; eg. If I want to shoot 1.0µm lines, I should choose a photomask grade better/equal to 5.0µm.
#“''GDS Level''” is the “layer number”
#"''topcell''" is the name of the Cell in your CAD file that contains the hierarchy of patterns to print.
#Typically printed "''Right reading (legible) with Chrome Down''", if your CAD is exactly what you want on the wafer.
#“''Min. Feature on Mask''/Lines” refers to minimum clear or chrome feature, assuming features similar to lines/spaces. See "''Grade''" above.
#“''Min. Contact''” refers to features with aspect ratio close to 1:1, eg. Squares and circles. These have a separate spec due to the manufacturing process, so make sure to choose the appropriate grade of photomask with this in mind.
#Choose a Critical Dimension “''CD''” similar to your most critical feature (scaled up to the reticle scale), so they will print & measure & guarantee test structures at that size.
#For UCSB purchases: you will need to submit your order in UCSB Procurement Gateway '''''first''''' (as a "''Non-Catalogue Item''"), with the cost estimate & grade/product code from our negotiated quote, so that you can get the Purchase Order (PO) Number. Then submit the order form to the photomask vendor with this PO number entered on their order form.

==Mask Layout==

*Maximum exposable single-image size: '''14.8 x 14.8 mm at 1x wafer-scale''' (74mm square at 5x reticle-scale). Photomask vendor can accept up to max. 78mm X 78mm @ 5x reticle-scale.
*For multiple Images (patterns) per photomask mask: '''≥1mm @ 1x wafer-scale''' / ≥5mm @ 5x mask-scale of chrome in between adjacent Images/patterns.
*For multiple Images per photomask, you'll need to calculate the distance, in mm, for the shutter blade positions to block off the unwanted regions of the mask.
**There are 4 shutter blades, '''XL(left)/XR(right)/YF(front)/YR(rear)''', that start at ''Position=0mm'' (not blocking any part of the mask), and can extend up to ''Position=97mm'', blocking the entire mask. For the first 13mm (''Position = 0→13mm''), nothing is blocked on the 14.8mm exposure field.
**Remember that the photomask is rotated 180° from how it's loaded into the reticle box.

==Alignment Marks (Global, Local/DFAS)==
To learn more about how these alignment marks work with the system, see the reticle handbook here:

*[https://wiki.nanofab.ucsb.edu/w/images/uploads/2023/GCA-ReticleHandbook.pdf '''GCA Reticle Handbook''']

In our system we mainly use manual global alignment to get +/- 0.25 or better alignment tolerance. Local alignment can be used but needs some characterization for each process.

*''Global alignment marks'': These marks and how to place them on the mask are described on page 5-44 to 5-47 of the above GCA Reticle Handbook and are included for download below. The difference of our system from the manual is that the objectives are 63.5 mm apart, not 76.2 mm as indicated in the manual. The distance of this mark (or marks) to the center of the cell in X and Y should be noted, this is the ''key offset'' and will be required when exposing a job. (Positive offset values are left ← for X and up ↑ for Y).
*''Local alignment marks'': Uses Digital Fine-Alignment System (DFAS). These marks and how to place them on the mask are described on page 5-33 to 5-34 of the above GCA Reticle Handbook and are included as an attachment to this document. If possible use one of each type if you desire to try to use local alignment. These can be light or dark field in nature. The distance of the center point of this mark (or marks) to the center of the cell in X and Y should be noted, this is the key offset and will be required when exposing a job.
*[https://wiki.nanotech.ucsb.edu/w/images/9/92/GCA_Global_Mark.gds Alignment Marks CAD File] can be downloaded here.

===Test Structures===

*''Vernier Scales:'' These can be included to quantify the alignment offset after an exposure is done. The reticle handbook has an example of vernier scales on pages 5-49 to 5-53. You should include them for any layers that require critical alignment.
*''Resolution:'' If you have room in the mask layout, it is good to have features that can give the resolution of a given exposure. The resolution should show both “pillars” and “trenches” in the resist so that you can see whether the focus or exposure needs some tweaking for your particular process.

==CAD Files==

*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling nor outer template applied - it is already at 5x magnification and has the GCA's reticle-alignment marks to align the mask to the lens column.''
**''Insert your wafer-scale designs into the template as Instances scaled UP by 5x (using the Instance Properties).''
**''Template is written for "objects/polygons are CLEAR" aka. "Dark Field" - choose your design polarity accordingly.''
**Use the Cell "'''Reticle_Align'''" or "'''Reticle_AlignFlat'''" (flattened version of the same), GDS '''Layer 42/0'''.
**''Your device cell should have center of die at (0,0), and instance it into the template with coords (0,0), for a single-design centered on the plate.''
*[https://wiki.nanotech.ucsb.edu/w/images/9/92/GCA_Global_Mark.gds GCA Alignment Marks CAD File] can be downloaded here.
**''You can optionally include these in your die, allowing the system to perform'' Local alignment ''in addition to std. Global alignment.''
**''The AutoStep200 also has a system mask with this mark, which you could optionally use to shoot marks on the wafer.''
*See [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files]] for other useful CAD files, such as Overlay/Alignment and Resolution measurement.

Template:News

2026-06-16T23:21:38Z

John d: renamed to ProtoFab

<startfeed />


''News from the U.C. Santa Barbara Nanofabrication Facility.''




===ProtoFab Opening Summer 2026===
The Nanofab is launching a [https://protofab.oasis.ucsb.edu/ Prototyping Facility called the "Protofab"], which is located at [https://oasis.ucsb.edu/ UCSB's new OASIS building]. Learn more at [https://protofab.oasis.ucsb.edu https://protofab.oasis.ucsb.edu]

The new lab will enable taking your diced chips from the Nanofab, to the Protofab where you can wirebond, attach to PCB's/carriers, align+attach optical fibers etc., to make a real "prototype". The lab is expected to open in Summer 2026, with equipment currently being installed.

Access & model is similar to the Nanofab - anyone can pay an hourly fee to go into the Protofab, using key fobs for access. (OASIS "Membership" is ''not required'' to use the Protofab, unless you also want your own desk + private lab space at OASIS.)

Contact the Protofab lab manager [mailto:arin_abed@ucsb.edu Arin Abed] for more information.
// [[User:John_d|Demis D. John]] 19:51, 27 May 2026 (UTC)

===DREAMS Hub awarded 2 projects in GaN and 5G/6G technologies===
[https://viterbischool.usc.edu/news/2024/09/usc-viterbi-led-ca-dreams-hub-is-awarded-31-9-million-in-funding-under-the-microelectronics-commons/ CA DREAMS Hub is awarded $31.9 million in funding under the Microelectronics Commons] -

* $16.2 Million to develop advanced gallium nitride (GaN) semiconductor technologies, with partners including USC, Northrop Grumman, Teledyne Technologies, HRL Laboratories, PseudolithIC, Monde Wireless Inc., Transphorm, UCLA and UC Santa Barbara.
* $15.7 Million in Funding for 5G/6G millimeter-wave Phased-Array Prototypes, with team USC, Northrop Grumman, HRL Laboratories, Teledyne, Caltech, UCLA, UC Santa Barbara, UC San Diego, Vorago, Global Foundries.

// [[User:John_d|Demis D. John]] 16:32, 23 September 2024 (PDT)

===NSF-ATE Award for SBCC and UCSB: New Semiconductor Pathway===
The UCSB NanoFab and CNSI were recently awarded a project by NSF-ATE to build a semiconductor pathway (associates degree or certificate) at Santa Barbara City College, utilizing UCSB Cleanrooms. The project "[https://www.nsf.gov/awardsearch/showAward?AWD_ID=2400982 Expansion of CCPRIME: Central Coast Partnership for Regional Industry-Focused Micro/Nanotechnology Education]" is one of 6 projects funded by an [https://new.nsf.gov/news/nsf-invests-76m-educational-projects-build-skilled Intel-NSF partnership.] The project builds on the existing "[https://nanofab.ucsb.edu/workforce#bootcamps Cleanroom Bootcamps]" already being run twice a year in the [https://www.cnsi.ucsb.edu/facilities/quantum-structures CNSI QSF cleanroom]. // [[User:John_d|Demis D. John]] 13:15, 14 August 2024 (PDT)

===CHIPS Act Award Announced to USC and UCSB NanoFab===
[https://carbajal.house.gov/news/documentsingle.aspx?DocumentID=1672 U.S. Congressman Salud Carbajal congratulates UCSB and the NanoFab] on receiving a [https://www.nist.gov/chips CHIPS & Science Act] award, as part of the [https://microelectronicscommons.org/ California DREAMS Hub (Microelectronics Commons) led by USC].
-- [[User:John d|Demis]] 12:06, 4 October 2023 (PDT)

=== RIE#3 Removed ===
We have removed [[RIE_3_(MRC)|RIE#3]] from the Nanofab, it has gone to the [https://www.ece.ucsb.edu/department-resources/electronics-shop/tcr Teaching Cleanroom]. All user's processes have been transferred to the [[Fluorine_ICP_Etcher_(PlasmaTherm/SLR_Fluorine_ICP)|Fluorine ICP Etcher]]. // [[User:John_d|Demis D. John]] 15:58, 6 August 2024 (PDT)

=== NanoFab staff awarded Goleta's Innovator of the Year 2023 ===
NanoFab staff member [[Demis D. John]] has been awarded the ''City of Goleta's "Innovator of the Year"'' for 2023! The award stems from the UCSB Nanofab's impact on the communities of Santa Barbara County and surrounding regions, in enabling cutting edge technology companies to thrive, which also enables many local careers in advanced high-tech. See the [https://sbscchamber.com/goletas-finest-2023-award-recipients-announced/ full announcement by the Santa Barbara South Coast Chamber of Commerce]. // [[User:John d|Demis D. John]] 13:58, 7 November 2023 (PST)

=== NanoFab Featured in Regional Tech Videos ===
The UCSB NanoFab is showcased as a driver of innovation and enabler of the regional high-tech industry.

See the videos here:
{| class="wikitable"
|[https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false '''''Santa Barbara County: This is TechTopia'''''] [[File:Techtopia_Vid_-_Thumbnail_PlayButton.jpg|none|300x300px|link=https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false]]

|[https://www.youtube.com/watch?v=op746os6eRI '''''UCSB NanoFab: An Innovation Center'''''] [[File:NanoFab_COE_Engineering_Vid_-_thumbnail_2_crop.jpg|none|300x300px|link=https://www.youtube.com/watch?v=op746os6eRI]]
|}

// [[User:John d|John d]] 09:26, 1 November 2023 (PST)




===''[[Template:News_-_Older_Articles|See older articles at this link]]''===
<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Template:News

2026-06-16T23:17:16Z

John d: /* Prototyping Lab Opening Summer 2026 */

<startfeed />


''News from the U.C. Santa Barbara Nanofabrication Facility.''




===Prototyping Lab Opening Summer 2026===
The Nanofab is launching a [https://protofab.oasis.ucsb.edu/ Prototyping Facility called the "Protofab"], which is located at [https://oasis.ucsb.edu/ UCSB's new OASIS building]. Learn more at [https://protofab.oasis.ucsb.edu https://protofab.oasis.ucsb.edu]

The new lab will enable taking your diced chips from the Nanofab, to the Protofab where you can wirebond, attach to PCB's/carriers, align+attach optical fibers etc., to make a real "prototype". The lab is expected to open in Summer 2026, with equipment currently being installed.

Access & model is similar to the Nanofab - anyone can pay an hourly fee to go into the Protofab, using key fobs for access. (OASIS "Membership" is ''not required'' to use the Protofab, unless you also want your own desk + private lab space at OASIS.)

Contact the Protofab lab manager [mailto:arin_abed@ucsb.edu Arin Abed] for more information.
// [[User:John_d|Demis D. John]] 19:51, 27 May 2026 (UTC)

===DREAMS Hub awarded 2 projects in GaN and 5G/6G technologies===
[https://viterbischool.usc.edu/news/2024/09/usc-viterbi-led-ca-dreams-hub-is-awarded-31-9-million-in-funding-under-the-microelectronics-commons/ CA DREAMS Hub is awarded $31.9 million in funding under the Microelectronics Commons] -

* $16.2 Million to develop advanced gallium nitride (GaN) semiconductor technologies, with partners including USC, Northrop Grumman, Teledyne Technologies, HRL Laboratories, PseudolithIC, Monde Wireless Inc., Transphorm, UCLA and UC Santa Barbara.
* $15.7 Million in Funding for 5G/6G millimeter-wave Phased-Array Prototypes, with team USC, Northrop Grumman, HRL Laboratories, Teledyne, Caltech, UCLA, UC Santa Barbara, UC San Diego, Vorago, Global Foundries.

// [[User:John_d|Demis D. John]] 16:32, 23 September 2024 (PDT)

===NSF-ATE Award for SBCC and UCSB: New Semiconductor Pathway===
The UCSB NanoFab and CNSI were recently awarded a project by NSF-ATE to build a semiconductor pathway (associates degree or certificate) at Santa Barbara City College, utilizing UCSB Cleanrooms. The project "[https://www.nsf.gov/awardsearch/showAward?AWD_ID=2400982 Expansion of CCPRIME: Central Coast Partnership for Regional Industry-Focused Micro/Nanotechnology Education]" is one of 6 projects funded by an [https://new.nsf.gov/news/nsf-invests-76m-educational-projects-build-skilled Intel-NSF partnership.] The project builds on the existing "[https://nanofab.ucsb.edu/workforce#bootcamps Cleanroom Bootcamps]" already being run twice a year in the [https://www.cnsi.ucsb.edu/facilities/quantum-structures CNSI QSF cleanroom]. // [[User:John_d|Demis D. John]] 13:15, 14 August 2024 (PDT)

===CHIPS Act Award Announced to USC and UCSB NanoFab===
[https://carbajal.house.gov/news/documentsingle.aspx?DocumentID=1672 U.S. Congressman Salud Carbajal congratulates UCSB and the NanoFab] on receiving a [https://www.nist.gov/chips CHIPS & Science Act] award, as part of the [https://microelectronicscommons.org/ California DREAMS Hub (Microelectronics Commons) led by USC].
-- [[User:John d|Demis]] 12:06, 4 October 2023 (PDT)

=== RIE#3 Removed ===
We have removed [[RIE_3_(MRC)|RIE#3]] from the Nanofab, it has gone to the [https://www.ece.ucsb.edu/department-resources/electronics-shop/tcr Teaching Cleanroom]. All user's processes have been transferred to the [[Fluorine_ICP_Etcher_(PlasmaTherm/SLR_Fluorine_ICP)|Fluorine ICP Etcher]]. // [[User:John_d|Demis D. John]] 15:58, 6 August 2024 (PDT)

=== NanoFab staff awarded Goleta's Innovator of the Year 2023 ===
NanoFab staff member [[Demis D. John]] has been awarded the ''City of Goleta's "Innovator of the Year"'' for 2023! The award stems from the UCSB Nanofab's impact on the communities of Santa Barbara County and surrounding regions, in enabling cutting edge technology companies to thrive, which also enables many local careers in advanced high-tech. See the [https://sbscchamber.com/goletas-finest-2023-award-recipients-announced/ full announcement by the Santa Barbara South Coast Chamber of Commerce]. // [[User:John d|Demis D. John]] 13:58, 7 November 2023 (PST)

=== NanoFab Featured in Regional Tech Videos ===
The UCSB NanoFab is showcased as a driver of innovation and enabler of the regional high-tech industry.

See the videos here:
{| class="wikitable"
|[https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false '''''Santa Barbara County: This is TechTopia'''''] [[File:Techtopia_Vid_-_Thumbnail_PlayButton.jpg|none|300x300px|link=https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false]]

|[https://www.youtube.com/watch?v=op746os6eRI '''''UCSB NanoFab: An Innovation Center'''''] [[File:NanoFab_COE_Engineering_Vid_-_thumbnail_2_crop.jpg|none|300x300px|link=https://www.youtube.com/watch?v=op746os6eRI]]
|}

// [[User:John d|John d]] 09:26, 1 November 2023 (PST)




===''[[Template:News_-_Older_Articles|See older articles at this link]]''===
<endfeed />
<noinclude>[[Category:Templates]]</noinclude>

Template:News

2026-06-16T23:16:12Z

John d: updated protofab news article with opening timeline summer 2026

<startfeed />


''News from the U.C. Santa Barbara Nanofabrication Facility.''




===Prototyping Lab Opening Summer 2026===
The Nanofab is launching a [https://protofab.oasis.ucsb.edu/ Prototyping Facility called the "Protofab"], which is located at [https://oasis.ucsb.edu/ UCSB's new OASIS building]. See the Protofab Wesbite: [https://protofab.oasis.ucsb.edu]

The new lab will enable taking your diced chips from the Nanofab, to the Protofab where you can wirebond, attach to PCB's/carriers, align+attach optical fibers etc., to make a real "prototype". The lab is expected to open in Summer 2026, with equipment currently being installed.

Access & model is similar to the Nanofab - anyone can pay an hourly fee to go into the Protofab, using key fobs for access. (OASIS "Membership" is ''not required'' to use the Protofab, unless you also want your own desk + private lab space at OASIS.)

Contact the Protofab lab manager [mailto:arin_abed@ucsb.edu Arin Abed] for more information.
// [[User:John_d|Demis D. John]] 19:51, 27 May 2026 (UTC)

===DREAMS Hub awarded 2 projects in GaN and 5G/6G technologies===
[https://viterbischool.usc.edu/news/2024/09/usc-viterbi-led-ca-dreams-hub-is-awarded-31-9-million-in-funding-under-the-microelectronics-commons/ CA DREAMS Hub is awarded $31.9 million in funding under the Microelectronics Commons] -

* $16.2 Million to develop advanced gallium nitride (GaN) semiconductor technologies, with partners including USC, Northrop Grumman, Teledyne Technologies, HRL Laboratories, PseudolithIC, Monde Wireless Inc., Transphorm, UCLA and UC Santa Barbara.
* $15.7 Million in Funding for 5G/6G millimeter-wave Phased-Array Prototypes, with team USC, Northrop Grumman, HRL Laboratories, Teledyne, Caltech, UCLA, UC Santa Barbara, UC San Diego, Vorago, Global Foundries.

// [[User:John_d|Demis D. John]] 16:32, 23 September 2024 (PDT)

===NSF-ATE Award for SBCC and UCSB: New Semiconductor Pathway===
The UCSB NanoFab and CNSI were recently awarded a project by NSF-ATE to build a semiconductor pathway (associates degree or certificate) at Santa Barbara City College, utilizing UCSB Cleanrooms. The project "[https://www.nsf.gov/awardsearch/showAward?AWD_ID=2400982 Expansion of CCPRIME: Central Coast Partnership for Regional Industry-Focused Micro/Nanotechnology Education]" is one of 6 projects funded by an [https://new.nsf.gov/news/nsf-invests-76m-educational-projects-build-skilled Intel-NSF partnership.] The project builds on the existing "[https://nanofab.ucsb.edu/workforce#bootcamps Cleanroom Bootcamps]" already being run twice a year in the [https://www.cnsi.ucsb.edu/facilities/quantum-structures CNSI QSF cleanroom]. // [[User:John_d|Demis D. John]] 13:15, 14 August 2024 (PDT)

===CHIPS Act Award Announced to USC and UCSB NanoFab===
[https://carbajal.house.gov/news/documentsingle.aspx?DocumentID=1672 U.S. Congressman Salud Carbajal congratulates UCSB and the NanoFab] on receiving a [https://www.nist.gov/chips CHIPS & Science Act] award, as part of the [https://microelectronicscommons.org/ California DREAMS Hub (Microelectronics Commons) led by USC].
-- [[User:John d|Demis]] 12:06, 4 October 2023 (PDT)

=== RIE#3 Removed ===
We have removed [[RIE_3_(MRC)|RIE#3]] from the Nanofab, it has gone to the [https://www.ece.ucsb.edu/department-resources/electronics-shop/tcr Teaching Cleanroom]. All user's processes have been transferred to the [[Fluorine_ICP_Etcher_(PlasmaTherm/SLR_Fluorine_ICP)|Fluorine ICP Etcher]]. // [[User:John_d|Demis D. John]] 15:58, 6 August 2024 (PDT)

=== NanoFab staff awarded Goleta's Innovator of the Year 2023 ===
NanoFab staff member [[Demis D. John]] has been awarded the ''City of Goleta's "Innovator of the Year"'' for 2023! The award stems from the UCSB Nanofab's impact on the communities of Santa Barbara County and surrounding regions, in enabling cutting edge technology companies to thrive, which also enables many local careers in advanced high-tech. See the [https://sbscchamber.com/goletas-finest-2023-award-recipients-announced/ full announcement by the Santa Barbara South Coast Chamber of Commerce]. // [[User:John d|Demis D. John]] 13:58, 7 November 2023 (PST)

=== NanoFab Featured in Regional Tech Videos ===
The UCSB NanoFab is showcased as a driver of innovation and enabler of the regional high-tech industry.

See the videos here:
{| class="wikitable"
|[https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false '''''Santa Barbara County: This is TechTopia'''''] [[File:Techtopia_Vid_-_Thumbnail_PlayButton.jpg|none|300x300px|link=https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false]]

|[https://www.youtube.com/watch?v=op746os6eRI '''''UCSB NanoFab: An Innovation Center'''''] [[File:NanoFab_COE_Engineering_Vid_-_thumbnail_2_crop.jpg|none|300x300px|link=https://www.youtube.com/watch?v=op746os6eRI]]
|}

// [[User:John d|John d]] 09:26, 1 November 2023 (PST)




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<endfeed />
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File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg

2026-06-16T22:10:12Z

John d: John d uploaded a new version of File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg

Microscope Training - Epi mode imaging example - 2022-12-21 XYZ W31A after metal --0011

UCSB NanoFab Microscope Training

2026-06-16T20:45:35Z

John d: /* Back/Front-side Illumination */

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "'''Episcopic'''" illumination mode
** Top-side illumination, that is '''reflective'''-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "'''Diascopic'''" illumination mode
** Back-side illumination, that is '''transmission'''-mode imaging (light is transmitting from the back to top of your sample).
** Only microscopes with a transparent Glass stage can support Diascopic mode illumination.
The Nikon scopes use a single illuminator for this, so only one brightness control knob, fast to switch between each mode.

The Olympus Fluoroscope has a separate illuminator for this, so you enable Diascopic mode by simply turning on the backside illuminator. This scope therefore allows both and and back-side illumination simultaneously.

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on the Nikon Eclipse Microscope #4. ]]<gallery widths="400" style="border: 2px;" mode="packed" heights="150" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) for checking a through-wafer etch.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:45:10Z

John d: /* Back/Front-side Illumination */

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "'''Episcopic'''" illumination mode
** Top-side illumination, that is '''reflective'''-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "'''Diascopic'''" illumination mode
** Back-side illumination, that is '''transmission'''-mode imaging (light is transmitting from the back to top of your sample).
** Only microscopes with a transparent Glass stage can support Diascopic mode illumination.
The Nikon scopes use a single illuminator for this, so only one brightness control knob, fast to switch between each mode.

The Olympus Fluoroscope has a separate illuminator for this, so you enable Diascopic mode by simply turning on the backside illuminator. This scope therefore allows both and and back-side illumination simultaneously.

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on the Nikon Eclipse microscope.]]<gallery widths="400" style="border: 2px;" mode="packed" heights="150" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) for checking a through-wafer etch.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:44:46Z

John d: /* Back/Front-side Illumination */

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "'''Episcopic'''" illumination mode
** Top-side illumination, that is '''reflective'''-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "'''Diascopic'''" illumination mode
** Back-side illumination, that is '''transmission'''-mode imaging (light is transmitting from the back to top of your sample).
** Only microscopes with a transparent Glass stage can support Diascopic mode illumination.
The Nikon scopes use a single illuminator for this, so only one brightness control knob, fast to switch between each mode.

The Olympus Fluoroscope has a separate illuminator for this, so you enable Diascopic mode by simply turning on the backside illuminator. This scope therefore allows both and and back-side illumination simultaneously.

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]<gallery widths="400" style="border: 2px;" mode="packed" heights="150" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) for checking a through-wafer etch.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:41:58Z

John d: /* Back/Front-side Illumination */

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "'''Episcopic'''" illumination mode
** Top-side illumination, that is '''reflective'''-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "'''Diascopic'''" illumination mode
** Back-side illumination, that is '''transmission'''-mode imaging (light is transmitting from the back to top of your sample).
** Only microscopes with a transparent Glass stage can support Diascopic mode illumination.
The Nikon scopes use a single illuminator for this, so only one brightness control knob, fast to switch between each mode.

The Olympus Fluoroscope has a separate illuminator for this, so you enable Diascopic mode by simply turning on the backside illuminator. This scope therefore allows both and and back-side illumination simultaneously.

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]<gallery widths="400" style="border: 2px;" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) mode imaging, for checking that a through-wafer etch is complete.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Backside/Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:40:53Z

John d: /* Back/Front-side Illumination */ reorg

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "'''Episcopic'''" illumination mode
** Top-side illumination, that is '''reflective'''-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "'''Diascopic'''" illumination mode
** Back-side illumination, that is '''transmission'''-mode imaging (light is transmitting from the back to top of your sample).
** Only microscopes with a transparent Glass stage can support Diascopic mode illumination.
The Nikon scopes use a single illuminator for this, so only one brightness control knob, fast to switch between each mode.

The Olympus Fluoroscope has a separate illuminator for this, so you enable Diascopic mode by simply turning on the backside illuminator. This scope therefore allows both and and back-side illumination simultaneously.

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]<gallery widths="400" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) mode imaging, for checking that a through-wafer etch is complete.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Backside/Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:39:40Z

John d: /* Back/Front-side Illumination */

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "'''Episcopic'''" illumination means top-side illumination, that is '''reflective'''-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "'''Diascopic'''" illumination means back-side illumination, that is '''transmission'''-mode imaging (light is transmitting from the back to front of your sample).
Only microscopes with a transparent Glass stage can support Diascopic mode illumination.

The Nikon scopes use a single illuminator for this, so only one brightness control

The Olympus Fluoroscope has a separate illuminator for this, so you enable Diascopic mode by simply turning on the backside illuminator. This scope therefore allows both and and back-side illumination simultaneously.

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]<gallery widths="400" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) mode imaging, for checking that a through-wafer etch is complete.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Backside/Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:39:25Z

John d: /* Back/Front-side Illumination */ added Olympus Fluorscope illumination metho, glass stage

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "'''Episcopic'''" illumination means top-side illumination, that is '''reflective'''-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "'''Diascopic'''" illumination means back-side illumination, that is '''transmission'''-mode imaging (light is transmitting from the back to front of your sample).
Only microscope with a transparent Glass stage can support Diascopic mode illumination.

The Nikon scopes use a single illuminator for this, so only one brightness control

The Olympus Fluoroscope has a separate illuminator for this, so you enable Diascopic mode by simply turning on the backside illuminator. This scope therefore allows both and and back-side illumination simultaneously.

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]<gallery widths="400" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) mode imaging, for checking that a through-wafer etch is complete.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Backside/Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:36:31Z

John d: /* Back/Front-side Illumination */ set back to epi when done

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "Episcopic" illumination means top-side illumination, that is reflective-mode imaging (light is reflecting off the top surface).
** '''Please set back to "Epi" (reflective) mode when you are done.'''
* "Diascopic" illumination means back-side illumination, that is transmission-mode imaging (light is transmitting from the back to front of your sample).

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]<gallery widths="400" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) mode imaging, for checking that a through-wafer etch is complete.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Backside/Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:27:25Z

John d: /* Back/Front-side Illumination */

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "Episcopic" illumination means top-side illumination, that is reflective-mode imaging (light is reflecting off the top surface).
** Please set back to "'''Epi'''" (reflective) mode when you are done.
* "Diascopic" illumination means back-side illumination, that is transmission-mode imaging (light is transmitting from the back to front of your sample).

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]<gallery widths="400" caption="Comparison of Reflective (Epi.) vs. Transmission (Dia.) mode imaging, for checking that a through-wafer etch is complete.">
File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|Released Membrane in Reflective/Epi mode imaging. Features are ~5-10µm. (Photo: [[Demis D. John]])
File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|Backside/Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. (Photo: [[Demis D. John]])
</gallery>
Written by [[Demis D. John]], 2024-11-25

UCSB NanoFab Microscope Training

2026-06-16T20:23:04Z

John d: /* Back/Front-side Illumination */ added epi/dia examples

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "Episcopic" illumination means top-side illumination, that is reflective-mode imaging (light is reflecting off the top surface).
** Please set back to "'''Epi'''" (reflective) mode when you are done.
* "Diascopic" illumination means back-side illumination, that is transmission-mode imaging (light is transmitting from the back to front of your sample).

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]
[[File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg|alt=photo of epi mode illumination|none|thumb|Released Membrane Reflective/Epi mode imaging example (Photo: Demis D. John)]]
[[File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg|alt=photo of diascopic illuminated mambrane|none|thumb|Backside/Transmissive mode (Diascopic) illumination of a released membrane, confirming that the Silicon substrate has been fully removed and the membrane is free-standing. Features are ~5-10µm.]]

Written by [[Demis D. John]], 2024-11-25

File:Microscope Training - Dia mode example - 2022-12-21 XYZ W31A after metal --0005.jpg

2026-06-16T20:21:04Z

John d:

Microscope Training - Diascopic mode example - 2022-12-21 XYZ W31A after metal --0011

File:Microscope Training - Epi mode example - 2022-12-21 XYZ W31A after metal --0011.jpg

2026-06-16T20:19:17Z

John d:

Microscope Training - Epi mode imaging example - 2022-12-21 XYZ W31A after metal --0011

UCSB NanoFab Microscope Training

2026-06-16T20:17:51Z

John d: /* Imaging Modes & Optical Filters */ added epi/dia mode imaging

==Overview==
We have numerous optical microscopes in our lab, each of which is a different model or manufacturer.

However, almost all of these microscopes share common features, even if the knob to enable the feature is in a different location. This "training" is intended to give the user an overview of these features, which are very useful for general observations, measurements, inspections after etching/other processing steps, distinguishing residues vs. delamination, to name a few.
'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes!
Most of our scopes have motorized objective turrets, use the electronic buttons instead.
__TOC__

==Focus==

===General Focusing===
'''The main danger on a microscope is crashing the objective into your sample!'''

ALWAYS begin at low magnification where the distance between the sample and objective is largest. Then gradually work your way up in magnification.

The focus knobs on all of our microscopes turn '''''towards the user''''' to '''''increase''''' separation between the sample stage and microscope objectives. Thus, when focusing on a sample, '''always start by turning the knob in this "safe" direction to prevent crashing the sample into an objective'''. If the image gets blurrier, then turn the knob the other way, and confirm that the sample is becoming less blurry.

There is usually a Coarse knob - the outer part of the knob, and a Fine knob - the inner part of the knob. '''Be very careful when turning the Coarse knob''', and watch the distance between the sample stage & objective while turning to prevent crashing!

[[File:Microscope Training - focus on edge crop - .jpg|150px|thumb|Focusing on the edge of your sample.]]
A useful trick before focusing is to do the following:

#Observe the microscope illumination spot on the stage (looking directly at the sample/stage, not through the eyepieces)
#Center the illumination spot on the edge of the sample, so there is a large height difference between the sample edge and the stage.
#Then, while looking through the eyepieces, turn the '''''Coarse''''' knob towards you and observe whether the Edge of the sample becomes more or less blurry. (You can also look at the sample/stage directly to make sure nothing is going to crash.) You should be able to see the hard edge of the sample even when it is very blurry, and focus on the top-surface using this edge.
#Then drive towards the feature on the sample surface you need to image, and the focus should be pretty close ('''''Fine'''''-focus only).

===Depth Measurements using focus===
[[File:Nikon OptiPhot 200 - 6219 - focus knob - .jpg|200px|thumb|Focus Knob with Micron gradations]]
Many microscopes have gradations marked on the fine-focus knob, indicating microns of movement of the sample stage. Using these marks, one can focus on different surfaces and use the gradations to estimate how many microns of vertical separation is present between the two surfaces. Measurement Error stems from your your ability to tell whether a surface is in-focus, often 5-10µm for 5x mag, and more accurate for higher magnifications.

If the microscope has motorized focus, the control software may display the focus height, which can then be used to measure the depth between different focus heights.

===Focusing on a sample with no features (Focus Stop)===
If your sample has no features or dust to focus on, you can still make sure you are focused on the sample surface using an adjustable aperture that projects a shadow on the sample, called a “Focus Stop” (sometimes marked as F.S.). When the edge of this shadow is sharp, the surface is in focus.

{| class="wikitable"
|[[File:Nikon OptiPhot 200 - 6224 - field iris.jpg|150px|thumb|Knob to adjust size of Iris projecting shadow onto the sample. “F.S.” for “focus stop”.]]
|[[File:Microscope Training - UScope F-stop example annotated 1000px.png|alt=Microscope Image of the focus stop shadow on a sample.|thumb|200x200px|Shadow projected on the sample by Focus Stop iris. When the shadow is sharp, you are focused on the sample surface.]]
|}

==Microscope Objectives==
===Preventing a Crash===
Changing objectives is the easiest way to crash into a sample, especially with motorized objective turrets. A few tips can easily prevent this from happening.

ALWAYS begin at low magnification where the working distance between the sample and objective is largest and the depth of focus is also largest.

The microscope objectives on all our microscopes are designed such that the sample is still approximately in focus when an objective is changed. Thus, one should '''only change objectives when there is some feature that is ''in focus'' on the sample'''. If you don't see anything at all, either because there are no features or because the sample is out of focus, '''find something to focus on before changing objectives'''! The “focus stop” iris (above), pieces of dirt or dust are particularly useful for this purpose, and the wafer edges often have such dirt from tweezers etc. The Field Iris / Focus Stop / Shadow for focusing mentioned above would also help.

===Working Distance===
Working Distance or WD of an objective is the distance (usually in millimeters) from the objective lens to the sample, for the sample to be in focus.

Generally, the lower the magnification, the longer the working distance.

For example, a 5x objective may have a long working distance (distance to sample) of 10mm, while the 100x may be very close at 0.2mm.

Thus it is very important that '''initial focus is found with a low magnification''' (and corresponding long working distance). Also the focal depth (range over which sample stays in focus) is wider for low mag, making it much easier to find the focal height, so you should always switch to the lowest mag. before starting to image your sample. (And switch back to lowest mag. when done, out of courtesy for the next user.)

Some objectives may actually have "WD" printed on them. For example, "'''WD 1.0'''" means that the sample will be in focus when it is approx. '''1.0mm''' away from the objective. This is very helpful when estimating, by eye, whether you need to move the sample stage up or down to get into focus. If the objective says "WD 0.2" that means it has to be so close that you really should just start at low mag. and work your way up, keeping the sample in focus at each successive magnification!

==Digital Imaging & Measurements==
Many of our microscopes have cameras and software for image capture.

For our scopes that have AmScope cameras and software installed, please see the following tutorial for making/saving measurements:

*[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide|'''Measurements and Imaging with Amscope Camera - Quickstart Usage Guide''']]

===Measurements outside the lab===
If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*AmScope Software - free microscope image analysis software, installed on many of our scopes.
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*FIJI - scientific image analysis software - for stand-alone image analysis after acquiring images.
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many other useful plugins, for particle counting, creating animations etc.

==Imaging Modes & Optical Filters==
Numerous imaging modes can be enabled or enhanced via optical filters available on the scopes.

The filters have a [https://en.wikipedia.org/wiki/Detent detent] (you can feel a "click" when they reach this position) so that they can be pulled out to a "stop" where they are not affecting with the lightpath, while remaining in the tool.

Do not pull the filters past the detent, or they may block the light path, and please '''don't remove them fully from the microscope'''.
[[File:Microscopes - Filter Out position-detent.png|none|thumb|Microscope filters in the "out" position.]]

=== "Yellow" Filter for Photoresist ===

==== Uses ====

* Prevent exposing photoresist

The Yellow/Green filters block Blue and UV light.

These filters will be labelled with:

* "GIF" (green light only) or
* "Y" (yellow)

Neither of the above filters will expose I-line, DUV or EBL photoresists. Light hitting the stage should look yellow or green when inserted.

=== Adjusting Brightness ===

==== Aperture ====
The adjustable Aperture can be used (on Scope #3/#4) to vary the illumination brightness:
[[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|237x237px|"''A.S.: Aperture Stop''" open/close buttons on Microscope #4]]

==== ND Filters - "Neutral Density" ====

* These filters reduce illumination/brightness.

These filters just reduce the incoming brightness, like wearing sunglasses. They do so without altering the color of the light.

You can insert more ND filters to further dim the input light.

''ND16'' is dimmer than ''ND8'' - put both in for even dimmer illumination.

===DIC/Nomarksi Imaging===
[[File:Microscope DIC-Nomarski Example v1.jpg|alt=microscope photos of Birght-Field and DIC of photoresist residues|thumb|247x247px|Comparison of Bright-Field versus DIC imaging of photoresist residues left after a lift-off. ''[[Demis D. John]], 2019.'']]

==== Uses ====

* Highlighting particles
* Observing topography/height differences.
* Converts nanometer-level topography/height differences into color.

[https://en.wikipedia.org/wiki/Differential_interference_contrast_microscopy Differential Interference Contrast] (aka. "DIC") converts nanometer-level height differences into color differences, operating similarly to a [https://en.wikipedia.org/w/index.php?title=Polariscope polariscope]. This allows the user to observe and identify small/thin residues, height differences or particulates. Photoresist residues are best observed with this method. Very small etch depths (eg. few-nm layers, or unintended etching by O2 plasma) can also be observed.

Many of our scopes have DIC imaging capabilities, although the filters that need to be inserted are arranged differently on each.

====DIC Filters Needed====
To enable DIC imaging, your scope needs

1) Input light to be polarized (often adjustable)

2) A prism inserted above the microscope objective

3) Output light (towards the observer) to be polarized, with adjustable rotation

The user should '''rotate the polarization''' to obtain the best image (eg. with highest contrast).

'''NOTE''': The DIC prism creates a slight double-image when inserted - make sure to pull it '''out''' to it's detent for normal imaging!

====DIC on Microscopes 3/4====
For Microscope #3, all three of these filters may be inserted/removed as indicated:
[[File:Microscopes - DIC filters and light path.png|alt=Image/schematic of the 3 DIC filters on Microscope 2|none|thumb|410x410px|The 3 filters needed for DIC imaging (Microscope 3). Other Microscopes also have these 3 filters, but located in different positions or sometimes combined.]]

====DIC on FL-Scope====
On the Fluoroscope, the rotatable filter wheel sets both the input & output polarizers simultaneously when you set it to "''DIC''", but you still need to insert/remove the DIC Prism.

====DIC on µScope-2====
The DIC prisms are located directly on the microscope objectives, and are not intended to be manually inserted/removed. We have left the DIC prisms only on the lower-mag objectives, and removed them from the 100x/150x objectives (where DIC imaging doesn't really work that well), in order to provide better high-mag imaging.

You still have to insert/remove the two polarizers.

The Input polarizer has motorized rotation, controlled by the controller pendant.

=== Dark Field Imaging ===
[[File:Dark Field Microscopy - High Particle Count example 2025-03-25 W1 particle check Demis.jpg|alt=microscope image showing bright dots indicating particles|thumb|205x205px|Example of a High particle count wafer on Microscope #4, at 5x magnification. This confirmed [[Surface Analysis (KLA/Tencor Surfscan)|Surfscan particle counts]].

([[Demis D. John]], 2025).]]

==== Uses ====

* Observing particles on flat surfaces
* Observing edges of features
* Estimating particle count vs. size

==== Enabling Dark Field ====
[[File:Microscope Training - BF-DF Slider.jpg|alt=photo of slider|none|thumb|The Bright Field / Dark Field slider on Microscope #3]]
Dark Field can be enabled by pulling the BF/DF slider to the "DF" position. "BF" puts it back into standard "Bright Field" mode.

==== Bright/Dark Field Explanation ====
[[File:Dark Field Microscopy explanation v1.jpg|alt=schematic showing light path for a smooth surface vs. particle, thro microscope objective|thumb|242x242px|Schematic explaining Dark Field microscopy mechanism''[[Demis D. John]], 2025'']]
The default microscope mode is Bright-Field imaging, where flat reflective surfaces on your sample are "bright" (illuminated). Incoming light hitting a flat surface is reflected straight back through the microscope objective, to reach the eyepieces/camera.

Dark Field imaging instead sends light through the sides of the microscope objective, so incoming light hits the sample at an angle. Light that hits a flat surface thus misses the optical path back to the eyepieces/camera, appearing "dark". Only light that hits curved/non-flat surfaces will be scattered back up through the microscope objectives, producing a bright spot.

==== Tips for particle estimations using Dark Field ====
The brightness of the illumination has a huge effect on how many particles will be observed. For example, in DF mode a dim microscope will show fewer particles than a brightly-illuminated microscope. If you are using Dark Field to clean samples or reduce particles on the surface, I recommend the following practices

* Use the same microscope each time - different microscopes have different illumination intensities.
* Raise the illumination brightness to maximum (just to provide a consistent brightness)
* Open the Illumination Aperture to maximum, with this button: [[File:Microscope Training - Aperture Stop Buttons.jpg|alt=Photo of the A.S. Aperture Stop open/close buttons on Microscope #4|none|thumb|180x180px|"A.S." Aperture Stop open/close buttons on Microscope #4]]
* Remove all ND filters, and/or take note of which are inserted. Use these for reducing the brightness if desired.

=== Back/Front-side Illumination ===

* "Episcopic" illumination means top-side illumination, that is reflective-mode imaging (light is reflecting off the top surface).
** Please set back to "'''Epi'''" (reflective) mode when you are done.
* "Diascopic" illumination means back-side illumination, that is transmission-mode imaging (light is transmitting from the back to front of your sample).

[[File:Nikon Microscope Training - front panel Epi Dia switch.png|alt=Photo of the Epi/Dia switch|none|thumb|300x300px|Episcopic/Diascopic switch on Nikon Eclipse microscope]]

Written by [[Demis D. John]], 2024-11-25

File:Nikon Microscope Training - front panel Epi Dia switch.png

2026-06-16T20:13:45Z

John d:

Episcopic/Diascopic switch on Nikon Eclipse microscope - microscope tutorial

Atomic Force Microscope (Bruker ICON)

2026-06-16T19:56:13Z

John d: linked to high-aspect-ratio trench schematic

{{tool2|{{PAGENAME}}
|picture=ICON_AFM.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Mitchell
|phone= (805)893-4974
|location=Bay 5
|email=mitchell@ece.ucsb.edu
|description = Bruker ICON AFM
|manufacturer = Bruker Nano, Inc
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy ContactMode and TappingMode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to pN range, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™, in the 1-10 nN range. PeakForce Tapping® enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]
*[https://docs.google.com/drawings/d/1WLvuu-BD0pzroAbuUE52mt5bO5VWN3biWDdG27dM86o/edit?usp=sharing Limitations on measuring high-aspect ratio trenches] - what happens when your trench is too deep for the probe tip? You mostly measure the tip's shape!

Step Profilometer (DektakXT)

2026-06-16T19:54:34Z

John d: linked to probe tip/high-aspect-ratio schematic

{{tool2|{{PAGENAME}}
|picture=DektakXT.jpg
|type = Inspection, Test and Characterization
|super= Aidan Hopkins
|super2= Bill Millerski
|phone=(805)839-3918x219
|location=Bay 3
|email=silva@ece.ucsb.edu
|description = Surface Profilometer
|manufacturer = [https://www.bruker.com/en/products-and-solutions/test-and-measurement/stylus-profilometers/dektakxt.html Bruker]
|materials =
}}
=About=
The DektakXT is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The DektakXT offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMS type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.

=Detailed Specifications=

*50 mm maximum sample thickness/8 inch maximum sample diameter
*.03 mg to 15 mg variable tip force
*Height/Depth measurements to 1 mm
*4 A repeatability on 0.1 um step and vertical resolution of 0.1 um
*Standard stylus radius is 12.5 um, optional 2 um stylus available
*6 inch stage diameter with manual controls for moving and leveling
*Maximum scan length of 55mm (minimum of 50um)
*Software data leveling and other analysis including stress and roughness
*Full GUI-based Windows control and data storage and exporting capability

=Tool References=

*[https://wiki.nanotech.ucsb.edu/w/images/6/6c/DektakXT_Operating_Procedure.pdf DektakXT SOP]
*[https://www.youtube.com/watch?v=HINRiQ7XUwE DektakXT Pre-Training Video]

=== Tutorials/Schematics ===

* [https://docs.google.com/drawings/d/1WLvuu-BD0pzroAbuUE52mt5bO5VWN3biWDdG27dM86o/edit?usp=sharing Limitations on measuring high-aspect ratio trenches] - what happens when your trench is too deep for the probe tip? You mostly measure the tip's shape!

ICP Etching Recipes

2026-06-13T01:30:54Z

John d: /* GaN Etch (Oxford ICP Etcher) */ added that the link includes Taguchi/L9 DOE explanation

{{recipes|Dry Etching}}

=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=

=== Process Tips ===

* Use the Santovac oil for mounting small pieces to Silicon carrier wafers, or else your resist will burn! Increases thermal conduction to the cooled carrier wafer. (Full-wafers instead get direct Helium cooling.) Careful that the oil does not get anywhere near the outer clamp that holds the wafer down, or your wafer will get stuck.
** The oil fully dissolves in Acetone or NMP. You can clean oil off the back by wiping the back of the sample against an ACE-soaked wipe.
* See the '''[[ICP Etching Recipes#Process Control Data (DSEiii)|Process Control Data below]]''' - Staff/Intern-run Etches Weekly, tracked over time.
** This tells you whether the chamber and tool are operating properly before you run your etch.
** You can follow the intern's travelers for details of their etch.

==Edge-Bead Removal (DSEiii)==
Make sure to remove photoresist from edges of wafer, or PR may stick to the top-side wafer clamp and destroy your wafer during unload!

*[[ASML DUV: Edge Bead Removal via Photolithography|Edge Bead Removal via Photolithography]]: use a custom metal mask to pattern the photoresist with a flood exposure.
**If you are etching fully through a wafer, remember that removal of edge-bead will cause full etching in the exposed areas. To prevent a wafer from falling into the machine after the etch, you can [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29|mount to a carrier wafer using wax]].
*[[Photolithography - Manual Edge-Bead Removal Techniques|Manual PR Edge-Bead Removal]] - using swabs and EBR100. This is prone to error and easy to accidentally leave a blob of PR on the edge - so be extra careful to ensure NO PR is left on the edges!

==High Rate Bosch Etch (DSEIII)==
*[//wiki.nanotech.ucsb.edu/wiki/images/4/4a/10-Si_Etch_Bosch_DSEIII.pdf Bosch Process Recipe and Characterization] - Standard recipe on the tool.[[File:DSEiii Bosch Ecth SEM Example 01.png|alt=Example SEM image|thumb|188x188px|Example of 100µm Deep Bosch Etched Silicon posts with Al2O3 hard mask. Close inspection shows the horizontal "scalloping" from the cycling nature of the etch. (Image Credit: [[Demis D. John]], 2021-07)]]
**'''STD_Bosch_Si (⭐️Production)''' - Developed 2024-10
***Old Recipe Name: "'''''Plasma-Therm Standard DSE'''''" - lower EtchA, less tolerant
**Standard [https://en.wikipedia.org/wiki/Deep_reactive-ion_etching#Bosch_process Bosch Process] for high aspect-ratio, high-selectivity Silicon etching.
***Cycles between polymer deposition "Dep" / Polymer etch "Etch A" / Si etch "Etch B" steps. Step Times gives fine control.
***To reduce roughening/grassing ("black silicon"), Increase "''Etch A''" ''t''ime by ~50%. Alternatively, reduce "''Dep''" step time by ~20%.
**Patterns with different exposed/etched areas will have different "optimal" parameters.
**This recipe has 2s Etch A time compared to "'''''Plasma-Therm Standard DSE'''''" (which has 1.5s Etch A) below - this reduced the undercut of mask to ~1% of the etch depth and the effect of [https://wiki.nanofab.ucsb.edu/w/images/a/a1/Cal_vs_Legacy_DSE.png aspect ratio on etch rate]. All other recipe parameters are the same.
**Selectivity to Photoresist ~60.
**Selectivity to SiO2 should be higher, not yet measured.
**Selectivity to Al2O3 is extremely high, >9000. See below TSV process for processing tips with Al2O3 hardmask.
**If you need to pattern all the way to the edge of the wafer, PR won't work because you have to remove the edge-bead of photoresist (see above). Instead use hardmask process (See "Through Silicon Via" etch below).
**Larger open area → lower selectivity & lower etch rate.
***<1% center to edge variability in etch rate for small open area.
***More variation across wafer for larger open area (eg. plasma dicing)
**Thick PR's approx ≥10µm tend to burn, avoid thick PR's. They also make edge-bead removal very difficult. Instead use an SiO2 hardmask or the Al2O3/SiO2 hardmask below.
{|
|[[File:Plasmatherm DSE - 40um deep Si etch Cal 241007 - 30D 002.jpg|alt=Tilted SEM of 40um deep etch|none|thumb|250x250px|~40µm deep Silicon etch, run as Process Control "EtchCal" (''Process Development and Image: [[Noah Dutra]], 2024-10-07'')]]
|[[File:DSE_16um_Bosch_Etch_-_22_013.jpg|alt=Example SEM image|none|thumb|250x250px|Example of 16.32µm Deep Etched Silicon with 650nm thick UV6 Photoresist mask, 2µm Pitch. (''Image Credit: [[Noah Dutra]] 2024-08'')]]
|}

=== '''Si Etching C4F8/SF6/Ar (PlasmaTherm DSEiii)''' ===
[[File:DSE plot.png|alt=example of Process Control Charts|thumb|[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281|232x232px]]
* Recipe: ''STD_Bosch_Si (⭐️Production),'' on 100mm Si Wafer with ~50% open area, photoresist mask, ~40µm deep

*[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=0#gid=0 Si Etching with C4F8/SF6/Ar - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/1xQcdUH560nT928miZMeP7xxQSwHz_a_EB9s_Kb1LSfg/edit?gid=1804752281#gid=1804752281 Si Etching with C4F8/SF6/Ar - '''Plots''']

===Through Silicon Via (TSV) etch (DSEiii)===
Since the topside clamp requires the removal of photoresist on the outermost ~5-7mm of the wafer, this makes PR incompatible with through-silicon etching (as the outer edges would be etched-through, dropping the inner portion into the chamber). In addition, in practice we have found that thick PR often roughens and burns during long ~30-60min etches, making removal very difficult.

Instead, we recommend the following process with Al2O3 hardmask:
We have a new wafer-mounting process for through-silicon etching, using the UV-Release Dicing tape. Contact [[Demis D. John|staff]] for more info.
-- [[Demis D. John|Demis]] 2026-02-10

'''NOTE''':
'''DO NOT RUN''' the wax-mounting process without discussing with staff first. The wax-mounting process process can leave wax on the wafer clamp, causing the next user's wafer to get stuck and fail transfer!
''(Through-wafer process with no wax is still acceptable.)'' -- [[Demis D. John|Demis]] 2024-03-11

{| class="wikitable"
! colspan="2" |Process for Through-Wafer Silicon Etching
with wax-mounting (small pieces only)
|-
|Process to etch through ~550µm Silicon
|''[[Demis D. John]] & [[Biljana Stamenic]] 2022-11-11. Please consider our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publication policy]] if you use/modify this process.''
|-
|Deposit 150nm Al2O3 on either:

*[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Al2O3_deposition_.28IBD.29 Veeco Nexus IBD]
*AJA Sputter [https://wiki.nanotech.ucsb.edu/wiki/Sputtering_Recipes#Materials_Table_.28Sputter_3.29 3]/[https://wiki.nanotech.ucsb.edu/wiki/Sputtering_Recipes#Al2O3_Deposition_.28Sputter_4.29 4]/[https://wiki.nanotech.ucsb.edu/wiki/Sputtering_Recipes#Materials_Table_.28Sputter_5.29 5] (Check which has Al target installed)
|May need to do dep. rate check beforehand.
|-
|Deposit ~3nm SiO2, ''in situ'' (same machine as above)
|This improves adhesion to photoresist and prevents developer attacking the Al2O3.
|-
|Lithography - your preferred method. Needs approx. ≥500nm thick PR.
|
|-
|Etch the [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 Al2O3 in Panasonic ICP 1/2]
|Use 50W version. Overetch by ~20%, will also etch through the thin SiO2 layer.
|-
|Strip PR - either ''[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_Etch.2FStrip_.28Panasonic_2.29 in situ]'', or via NMP 80°C soak followed by [https://wiki.nanotech.ucsb.edu/wiki/Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29 PEii Technics ashing].
|''In situ'' PR strip appears to give better + faster results.
|-
|If pieces of the wafer are at risk of falling into the chamber, mount the product wafer to a carrier wafer:
[https://wiki.nanotech.ucsb.edu/wiki/Logitech_WBS7_-_Procedure_for_Wax_Mounting_with_bulk_Crystalbond_Stick Logitech Wax Mounting Recipe - Bulk Crystal Bond]

If you are only etching small holes through the wafer (majority of wafer is intact), then wax-mounting is not necessary.
|'''CONTACT [[Demis D. John|STAFF]]''' before attempting this step!

Critical - Ensure no wax is present on either side or edge of wafer prior to DSE etching, or wafer may break in the DSE during robot unload!
|-
|Use POLOS spinners with ACE/ISO to clean front and back of wafer.
'''''IMPORTANT''''' for wax-mounting, to ensure wax does not stick your wafer to the DSE clamp.

Observe ''carefully'' for any wax protruding from between wafers - redo spin-clean as needed.
|Also make sure wax thickness is not too thick, of long etches could cause wax to seep out from between the wafers.
|-
|DSEiii etch - to eliminate grassing:

* Increase EtchA LF-Bias Power and Duration
** EtchA: 300W for 3.5–4sec
** New method as of ~2025
Old method: reduce Dep step:

*Bosch Cycles: Dep: 1.2sec / Etch A: 1.5sec / Etch B: 2.0sec
*Rate ≈ 4.25µm / min
|Can use Lasermonitor and/or Camera to observe when etch is fully through. Trenches may get black/rough, but then clear up when fully etched.

*Record Helium FLOW during recipe run, for next step (if He leaks).

*Ok to remove wafer, observe/measure, and re-load for etching.

*If see black grass and etch rate drops, may need to run an O2 plasma with [[Ashers (Technics PEII)|Technics PEii]] few min to remove polymer, Increase EtchA step time (eg. by 50-100%) and then continue the etch.
|-
|If you did not wax-mount your wafer, the recipe will eventually fail for Helium Pressure/Flow out of compliance. This is because the cooling Helium leaks through the wafer when the openings get fully etched through.
Once this happens,

*Leave your wafer in the chamber, then

*Edit recipe to set Helium Cooling (first step only) to "Flow Control Only".
*Set to typical flow of normal process from above (Something like ~6sccm? Not sure. Exact value is not critical)
*Re-run the recipe with He on Flow-control only until etch is complete.
|
|-
|Strip Al2O3/SiO2 either with Buffered HF, or same Pan1/2 dry etch as above.
BHF: Eg. ~2min to fully remove SiO2 + Al2O3, with overetch.
|See etch BHF rates of the thin-films on [[Wet Etching Recipes#Table of Wet Etching Recipes|this table]].
|-
|IF wax-mounted - either

*dissolve in Acetone overnight (make sure to excess-fill enough and cover tightly with tinfoil so it doesn't dry up), complete with ACE/ISO rinse

OR

*place wafer on tinfoil-covered hotplate at 150°C, and slide product wafer off, then
**ACE/ISO clean (eg. POLOS) to remove wax.
|
|-
| colspan="2" |''If you '''publish''' using the above process, please consider our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publication policy]]. This process was developed by [[Biljana Stamenic]] and [[Demis D. John]], 2022.''
|}

=== Plasma Dicing (DSEIII) ===
'''''Coming Soon''''': Plasma Dicing process with Dicing Tape as backing film.

This process has been developed by staff, is currently in the final stages of finalizing a public recipe. [[Demis D. John|'''''Contact staff''''']] if you want to use it sooner.

==Silicon: Single-Step, Low Etch Rate, Smooth Sidewall Process (DSEIII)==

*'''SF6-C4F8-CF4 Si Etch v1 (⭐️Production)''' - Developed 2026-01 by [[Noah Dutra]]
**12mT, 20/850W, C4F8/SF6/CF4=68.3/32.5/32.4sccm
**E.R. = 339.4nm/min, Selectivity (to UV6) = 4.9
**Smooth, Vertical, E.R. uniformity is within 5% on wafer
**Tested with 4" wafers that are ~50% open with UV6 PR
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8f/10-Si_Etch_Single_Step_Smooth_Sidewall_DSEIII.pdf Single Step Silicon Etch Recipe and Characterization]
**Older, alternate Si "shallow/smooth" etch recipe.
**Recipe Name: "'''''Nano Trench Etch'''''" (''Production'' - copy to your ''Personal'' category)
**Used instead of Bosch Process, to avoid scalloping on the sidewall.
**Lower selectivity, lower etch rate, smoother sidewalls.

== SiO2 Etch (DSEiii) ==
These recipes were developed to serve as secondary pathways to the calibrated FICP SiO2 and Si etch calibrations [[Process Group - Process Control Data#PlasmaTherm SLR Fluorine Etcher - Process Control|here]]. [https://wiki.nanofab.ucsb.edu/w/images/b/b3/FICP-DSE_Analogous_Recipes.pdf Click here for SEMs comparing both cals].
*'''CF4-C4F8 SiO2 Etch v1 (⭐️Production)''' - Developed 2026-01 by [[Noah Dutra]]
**3mT, 70/800W, C4F8/CF4=7.5/32.5sccm
**E.R. = 270nm/min, Selectivity (to SPR955) = 1.3
**Vertical/Smooth
**Tested by mounting 1cmx1cm piece with oil on 4" Si

==F-ICP Backup Recipes (DSEiii)==
These recipes were developed to serve as backup processes for the calibrated [[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|'''Fluorine-ICP''']] SiO2 and Si etches [[Process Group - Process Control Data#PlasmaTherm SLR Fluorine Etcher - Process Control|here]].

[https://wiki.nanofab.ucsb.edu/w/images/b/b3/FICP-DSE_Analogous_Recipes.pdf Click here for SEMs comparing FICP to DSE etch processes].

*'''[[ICP Etching Recipes#Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)|Si Etch v1 (⭐️Production)]]'''
*'''[[ICP Etching Recipes#SiO2 Etch (DSEiii)|SiO2 Etch v1 (⭐️Production)]]'''

=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=

=== Process Tips ===

* Use the Santovac oil for mounting small pieces to Silicon carrier wafers, or else your resist will burn! Increases thermal conduction to the cooled carrier wafer. (Full-wafers instead get direct Helium cooling.) Careful that the oil does not get anywhere near the outer clamp that holds the wafer down, or your wafer will get stuck.
** The oil fully dissolves in Acetone or NMP. You can clean oil off the back by wiping the back of the sample against an ACE-soaked wipe.
* See the [[ICP Etching Recipes#Si Etching C4F8/SF6/CF4 (Fluorine ICP Etcher)|'''Process Control Data below''']] - Staff/Intern-run Etches Weekly, tracked over time.
** This tells you whether the chamber and tool are operating properly before you run your etch.
** You can follow the intern's travelers for details of their etch.

===Recipe Tips===

*RF1: Bias Power (with DCV readback)
*RF2: ICP Power
*For trouble igniting ICP plasma, add 15 to 75 W of bias power during ignition step. Typical ignition pressures 5 to 10 mT.

==Si Etch Recipes (Fluorine ICP Etcher)==
[[File:PRStrip 019 (1).jpg|alt=Example SEM image|thumb|180x180px|Example of 1.65µm Deep Etched Silicon, 2µm Pitch. (Image Credit: Noah Dutra 2024-09)]]
*'''"SiVertHFv2" (⭐️Production)'''
**20mTorr, RF=18W, ICP=950W, C4F8/SF6/CF4=120/48/54sccm
***This recipe has 2x gas flow compared to "'''''SiVertHF'''''" below - this reduced the loading effect (dependence on % etched area).
**Selectivity Silicon:Photoresist ≈ 5
**Etch Rates: Si ≈ 300-350 nm/min; SiO2 ≈ 30-35 nm/min
**89-90 degree etch angle, ie, vertical.
**High selectivity to Al2O3 masks.
***For high aspect ratio Si etching, try [[Atomic Layer Deposition (Oxford FlexAL)|ALD]] [[Atomic Layer Deposition Recipes#Al2O3 deposition .28ALD CHAMBER 3.29|Al2O3]] (~20-30nm) + [[Atomic Layer Deposition Recipes#SiO2 deposition .28ALD CHAMBER 3.29|SiO2]] (2nm, for PR adhesion) hardmasks followed by [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 Pan2 Al2O3 etch] (will go straight through the thin SiO2 without additional etch time). Works well for allowing thin PR's (eg. [[Stepper 3 (ASML)|DUV]] or [[E-Beam Lithography System (JEOL JBX-6300FS)|EBL]] PR's) to enable deep etches.
**[[ICP Etching Recipes#Si Etching C4F8/SF6/CF4 (Fluorine ICP Etcher)|Process Control Data above]] - Staff/Intern-run Etches Weekly, tracked over time.
*Old Recipe: [//wiki.nanotech.ucsb.edu/wiki/images/b/b8/SLR_-_SiVertHF.pdf SiVertHF] - Si Vertical Etch using C4F8/SF6/CF4 and resist mask

===Process Notes/Observations===

*Due to high selectivity against SiO2, it may be necessary to run a ~10sec 50W SiO2 etch (below) to remove native oxide on Si. This can be performed ''in situ'' before the Si etch. It's possible this is actually an effect of photoresist open-area - we have conflicting results.
**If you see very low etch rates, try the above SiO2 etch, or try a short [[ICP Etching Recipes#PR/BARC Etch (Fluorine ICP Etcher)|PR/BARC etch]].
*We have observed that full-wafers with small open area in ''photoresist masks'' might require a recalibration of the C4F8/SF6 ratio in order to prevent very low etch rates.

=== Process Control: Si Etching C4F8/SF6/CF4 (Fluorine ICP Etcher) ===
[[File:FICP-Si.png|alt=example of Process Control Charts|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281]]''Full Wafer Si etching with ~50% open area and resist mask, run weekly by [[Process Group Interns|NanoFab Interns]].''

*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=0#gid=0 Si Etching with C4F8/SF6/CF4 - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/15iRs-JhfgkMto5rZVtG0hJjcLMiHy039_ahv2nus0UQ/edit?gid=1804752281#gid=1804752281 Si Etching with C4F8/SF6/CF4 - '''Plots''']

==SiO2 Etch Recipes (Fluorine ICP Etcher)==
[[File:FL-ICP_50W_SiO2_etch_with_Ru_Hard_Mask.png|alt=SEM of FL-ICP 50W SiO2 etch with Ru Hard Mask|thumb|266x266px|50W SiO2 Etch w/ Ru Hardmask]]
[[File:FL-ICP_200W_SiO2_Etch_with_Ru_Hardmask_-_Ning_Cao.png|alt=SEM of FL-ICP 200W SiO2 Etch with Ru Hardmask - Ning Cao|thumb|266x266px|200W SiO2 Etch w/ Ru Hardmask (Ning Cao)]]
*'''"SiO2 Etch-50W" (⭐️Production)'''
**3.8mT, RF=50W, ICP=900W, CHF3/CF4=10/30sccm
**SiO2 etch rate: ~250nm/min
**Selectivity SiO2:Photoresist ≈ 1.10–1.20
**Selectivity SiO2:Ru ≈ 36
**[[ICP Etching Recipes#SiO2 Etching with CHF3/CF4 (Fluorine ICP Etcher)|Process Control Data Above]] - Staff/Intern-run Etches Weekly, tracked over time.

=== [//wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf SiO2 Etching using Ruthenium Hardmask] ===

* Click above for [http://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Full Process Traveler]
** Process written for Sputtered Ru & I-Line GCA Stepper litho
** Can be transferred to ALD Ru or DUV/EBL Litho.

*''Ning Cao & Bill Mitchell, 2019-06''
*''High-selectivity and deep etching using sputtered Ru hardmask and I-Line litho.''
*''Etch also works well with PR masking''
*''Chemistry: CHF3/CF4''
*''Variations in SiO2 etch Bias Power: 50 / 200 / 400W bias.''
*Ru etch selectivity to PR: 0.18 (less than 1): 150nm Ru / 800nm PR
*50W Bias: ('''recommended''')
**Selectivity to photoresist: 1.10–1.20
**SiO2 selectivity to Ru: 36
**SiO2 etch rate: 263nm/min
**''Smoothest vertical etch for SiO2.''
*200W Bias: (higher etch rate)
**SiO2 selectivity to Ru: 38
**SiO2 etch rate: 471nm/min
*This etch is detailed in the following article: [[Template:Publications#Highly Selective and Vertical Etch of Silicon Dioxide using Ruthenium Films as an Etch Mask|W.J. Mitchell ''et al.'', JVST-A, May 2021]]
*Updates: Many users have found that SiO2-masking the Ru hardmask results in vastly improved photoresist selectivity, making litho+etch of small features much better.
**Layer stack looks like: SiO2 (or other dielectric target layer to etch) / Ru hardmask / SiO2 hardmask (thin) / Photoresist.
**Typically strip the masks+PR with all dry etching. That means the entire etch process (all etches and strips) can be run ''in situ'' on the Panasonic ICP in a rapid single-tool etch process.
===Process Control: SiO2 Etching with CHF3/CF4 (Fluorine ICP Etcher)===
[[File:FL-ICP Process Control Data Example.jpg|alt=example of Process Control Charts|thumb|242x242px|[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281]]''Full Wafer Si etching with ~50% open area and resist mask, run weekly by [[Process Group Interns|NanoFab Interns]].''
*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit?usp=sharing SiO2 Etching with CHF3/CF4 - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/15hYkCqL3UNNayt4sXrvVi4mBj-OSdnF7PE29mQW9AEY/edit#gid=1804752281 SiO2 Etching with CHF3/CF4 - '''Plots''']

==Si3N4 Etching (Fluorine ICP Etcher)==
<code>Developed by Bill Mitchell. Please see [[Frequently Asked Questions#Publications acknowledging the Nanofab|publication policy]].</code>

*ICP = 950/75W
*Pressure = 5mT
*Low Polymer Dep: CF4 = 60sccm
**Etch Rate = 420nm/min (PECVD Si3N4)
*Higher verticality: CF4 = 35 / CHF3 = 25 sccm
**Etch Rate = 380nm/min (PECVD Si3N4)

==Photoresist & ARC (Fluorine ICP Etcher)==
Chain multiple Recipes in a Flow, to allow you to to do ''in situ'' BARC etching, and follow up with ''in situ'' Photoresist Strip.

===PR/BARC Etch (Fluorine ICP Etcher)===
[[File:SEM Image.png|thumb|New PR Strip recipe: Wafer had UV6 or UVN30 as mask. 5min Si etch followed by '''PostBARC Etch/PR Strip (STD)_V2''' with 2min over etch (Credit: [[Gopikrishnan G M|Gopi Meena]])]]
[[File:SEM Image of wafer after PR strip.png|thumb|294x294px|Old PR strip recipe: Wafer had UV6 or UVN30 as mask. 5min Si etch followed by '''PostBARC Etch/PR Strip (STD)''' with 2min over etch (Credit: [[Gopikrishnan G M|Gopi Meena]])]]
*Etching [[Stepper Recipes#DUV-42P|DUV42P-6]] Bottom Anti-Reflection Coating
**~60nm thick (2500krpm)
**O2=20sccm / 10mT / RF1(bias)=100W / RF2(icp)=0W
**45sec-1min

=== Photoresist Strip/Polymer Removal (Fluorine ICP Etcher) ===
'''Old''' PR strip recipe: '''PostBARC Etch/PR Strip (STD)'''
*O2=100sccm / 5mT / RF1(bias)=10W / RF2(icp)=825W
*75W Bias can be helpful for difficult to remove polymers, eg. 2min
*Use laser monitor to check for complete removal, overetch to remove Fluorocarbon polymers.
*Not able to completely remove PR (both negative & positive) after prolonged over etching (over etching of +2min)
*Leaves behind residue on the sides

'''New''' PR strip recipe: '''PostBARC Etch/PR Strip (STD)_V2'''
*O2=100sccm / 5mT / RF1(bias)=100W / RF2(icp)=825W
*RF bias increased by 10x to 100W
*Able to completely remove PR (both negative & positive) after over etching (over etching of +2min)
*Clean surface with no residue

==Cleaning Procedures (Fluorine ICP Etcher)==

* [https://wiki.nanotech.ucsb.edu/w/images/6/69/Cleaning_Rules_for_Fluorine_ICP_Etch_tool.pdf '''Cleaning Rules'''] - for various etches. All cleans are O2 plasma.

=[[ICP Etch 1 (Panasonic E646V)]]=
'''Panasonic ICP#1 is currently down -''' Use Panasonic ICP#2 instead. Most processes directly transfer with only small change in etch rate. Data kept here for historical purposes only.

==SiO2 Etching (Panasonic 1)==

===Recipes===

*[//wiki.nanotech.ucsb.edu/wiki/images/3/3e/Panasonic1-SiO-Etch.pdf SiO2 Vertical Etch Recipe Parameters - CHF3 "SiOVert"]
**Etch rate ≈ 2300Å/min (users must calibrate)
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)

===Recipe Variations===
''Use these to determine how each etch parameter affects the process.''

*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf SiO2 CHF3 Etch Variations] - CHF3 with varying Bias and Pressure & Slanted SiO2 etching

==SiNx Etching (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/c/ce/Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf SiNx Etch Rates and Variations - CF4-O2]

==Al Etch (Panasonic 1)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - Cl2BCl3]
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/60/32-Reducing_AlCl3_Corrosion_with_CHF3_plasma.pdf AlCl3 Erosion Issue and the Solution]

==Cr Etch (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/8/88/Panasonic-1-Cr-Etch-revA.pdf Cr Etch Recipes - Cl2O2]

==Ta Etch (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/f/f2/104_Ta_Etch.pdf Ta Etch Recipe] - Cl2/BCl3

==Ti Etch (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/4/47/Panasonic-1-Ti-Etch-Deep-RevA.pdf Ti Deep Etch Recipes - Cl2Ar]
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].

==W-TiW Etch (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/7/76/Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf Ti-TiW Etch Recipes - SF6Ar]

==GaAs-AlGaAs Etch (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar]
*[//wiki.nanotech.ucsb.edu/wiki/images/2/26/12-Plasma_Etching_of_AlGaAs-Panasonic_ICP-1-Etcher.pdf AlGaAs Etch Recipes - Cl2N2]
*[//wiki.nanotech.ucsb.edu/wiki/images/0/04/Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation]

==GaN Etch (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/d/d6/07-GaN_Etch-Panasonic-ICP-1.pdf GaN Etch Recipes Cl2N2]
*[//wiki.nanotech.ucsb.edu/wiki/images/6/60/Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf GaN Selective Etch over AlGaN Recipes BCl3-SF6]

==Photoresist and ARC Etching (Panasonic 1)==
[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 Please see the recipes for Panasonic ICP#2] - the same recipes apply.

Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.

==SiC Etch (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/d/d0/Panasonic_1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf SiC Etch Recipes Ni Mask - SF6]

==Sapphire Etch (Panasonic 1)==

*[//wiki.nanotech.ucsb.edu/wiki/images/3/3a/Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf Sapphire Etch Recipes Ni and PR Mask - BCl3-Cl2]

==Cleaning Recipes==
'''''To Be Added'''''

==Old Deleted Recipes==
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.

If you need to free up a recipe slot, please contact the [[ICP Etch 1 (Panasonic E626I)|tool's Supervisor]] and they'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.

==Process Control Data (Panasonic 1)==

===SiO2 Etch with CHF3/CF4 - Process Control Data (Panasonic 1)===

*[https://docs.google.com/spreadsheets/d/1gBqCYXSl7IqpNL-yI11cuURlfZpTWwXUVM9hY_gGpT8/edit?usp=sharing SiO2 Etch with CHF3/CF4 - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/1gBqCYXSl7IqpNL-yI11cuURlfZpTWwXUVM9hY_gGpT8/edit#gid=1804752281 SiO2 Etch with CHF3/CF4 - '''Plots'''][[File:ICP1 Process Control Data Example.jpg|alt=example chart of ICP1 SiO2 Process Control Chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1gBqCYXSl7IqpNL-yI11cuURlfZpTWwXUVM9hY_gGpT8/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1gBqCYXSl7IqpNL-yI11cuURlfZpTWwXUVM9hY_gGpT8/edit#gid=1804752281]]

=[[ICP Etch 2 (Panasonic E626I)]]=
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

=== Process Tips ===

* Use the Santovac oil for mounting small pieces to Silicon carrier wafers, or else your resist will burn! Increases thermal conduction to the cooled carrier wafer. (Full-wafers instead get direct Helium cooling.) Careful that the oil does not get on the ''back'' of the carrier wafer or you will get Helium cooling errors.
** The oil fully dissolves in Acetone or NMP. You can clean oil off the back by wiping the back of the sample against an ACE-soaked wipe.
* See the '''Process Control sections below''' - [[Process Group Interns|NanoFab Interns]] run Etches Weekly, tracked over time.
** This tells you whether the chamber and tool are operating properly before you run your etch.
** You can follow the intern's travelers for details of their etch, and see their SEM's.

==SiO2 Etching (Panasonic 2)==

===Recipes===

*[//wiki.nanotech.ucsb.edu/wiki/images/9/9e/33-Etching_SiO2_with_Vertical_Side-wall.pdf SiO2 Vertical Etch Recipe#2 - CF4/CHF3]
**''This etch is used in our Process Control weekly cals run by [[Process Group Interns|NanoFab Interns]]. Very stable over time ±5%.''
*[//wiki.nanotech.ucsb.edu/wiki/images/1/1e/Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf SiO2 Nanoscale Etch Recipe - CHF3/O2]
*[//wiki.nanotech.ucsb.edu/wiki/images/d/d5/Panasonic2-SiOx-Recipe.pdf SiO2 Vertical Etch Recipe - CHF3 "SiOVert"]
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].

===Recipe Variations===
''Use these to determine how etch parameters affect the process.''

*[https://wiki.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipes]

===Process Control: SiO2 Etch with CHF3/CF4 (Panasonic 2)===
[[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|thumb|269x269px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts] for SiO2 etching.|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]''Weekly cal etches of the CF4/CHF3 SiO2 etch, run by [[Process Group Interns|NanoFab Interns]].''
*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit?usp=sharing SiO2 Etch with CHF3/CF4 - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 SiO2 Etch with CHF3/CF4 - '''Plots''']

==SiNx Etching (Panasonic 2)==

*[//wiki.nanotech.ucsb.edu/wiki/images/0/06/Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf SiNx Nanoscale Etch Recipe - CHF3/O2]

==Al Etch (Panasonic 2)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/Panasonic-1-Al-Etch-RevA.pdf Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]

==Al2O3 Etching (Panasonic 2)==
[//wiki.nanotech.ucsb.edu/wiki/images/d/d2/Brian_Markman_-_Al2O3_ICP2_Etch_Rates_2018.pdf ALD Al2O3 Etch Rates in BCl3 Chemistry] (click for plots of etch rate)

''Contributed by Brian Markman, 2018''

*BCl3 = 30sccm
*Pressure = 0.50 Pa
*ICP Source RF = 500
*Bias RF = 50W or 250W (250W can burn PR)
*Cooling He Flow/Pressure = 15.0 sccm / 400 Pa
*Etch Rate 50W: 39.6nm/min (0.66nm/sec)
*Etch Rate 250W: 60.0nm/min (1.0 nm/sec)

==GaAs Etch (Panasonic 2)==

*GaAs Etch Cal - ''Noah Dutra & Fatt Foong, 2025-02-12''
**Etch Rates ~1um/min, Selectivity to SiO2 ~ 27:1, Sidewalls ~ 90°
**Etch Rate/Selectivity [https://wiki.nanofab.ucsb.edu/w/images/7/76/GaAs_pressure_experiment.png highly sensitive to pressure] (image credit: Terry Guerrero)
**Cal Sample: ~1cm sample etched mounted with oil onto 150mm Si carrier
**Recipe: 0.5Pa, 100/900W, N2/Cl2=10/20sccm
*[//wiki.nanotech.ucsb.edu/wiki/images/f/ff/16-GaAs_etch-ICP-2.pdf Non-Calibration GaAs Etch Recipes - Panasonic 2 - Cl2N2]

===Process Control: GaAs Etch with N2/Cl2 (Panasonic 2)===
[[File:GaAs Etch ICP2 SPC.png|alt=example ICP2 process control chart|thumb|249x249px|[https://docs.google.com/spreadsheets/d/16gHOO3PQn_LinrXGPeSTSBf5dnw3leSLh1gq0PLr43w/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts] for GaAs etching.|link=https://docs.google.com/spreadsheets/d/16gHOO3PQn_LinrXGPeSTSBf5dnw3leSLh1gq0PLr43w/edit?gid=1804752281#gid=1804752281]]
*[https://docs.google.com/spreadsheets/d/16gHOO3PQn_LinrXGPeSTSBf5dnw3leSLh1gq0PLr43w/edit?gid=0#gid=0 GaAs Etch with N2/Cl2 - '''Etch Data''']
*[https://docs.google.com/spreadsheets/d/16gHOO3PQn_LinrXGPeSTSBf5dnw3leSLh1gq0PLr43w/edit?gid=1804752281#gid=1804752281 GaAs Etch with N2/Cl2 - '''Plots''']

==Photoresist and ARC etching (Panasonic 2)==
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:

===ARC Etching: DUV-42P or AR6 (Panasonic 2)===

*O2 = 40 sccm // 0.5 Pa
*ICP = 75W // RF = 75W
*45 sec for full etching (incl. overetch) of ~60nm [[Stepper Recipes#DUV-42P-6|DUV-42P]] (same as for AR6; 2018-2019, [[Demis D. John|Demis]]/[[Brian Thibeault|BrianT]])

===Photoresist Etch/Strip (Panasonic 2)===
Works very well for photoresist stripping

*O2 = 40 sccm // 1.0 Pa
*ICP = 350W // RF = 100W
*Etch Rate for UV6-0.8 (DUV PR) = 518.5nm / 1min (2019, [[Demis D. John|Demis]])
*2m30sec to fully remove UV6-0.8 with ~200% overetch (2019, [[Demis D. John|Demis]])

==Ru (Ruthenium) Etch (Panasonic 2)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/e/e9/194_Ru_Etch_O2%2CCl2.pdf Ru Etch] - ''[[Bill Mitchell]] 2019-09-19''
**''This etch is used in the following publication:'' [[Template:Publications#Highly Selective and Vertical Etch of Silicon Dioxide using Ruthenium Films as an Etch Mask|W.J. Mitchell, "Highly Selective and Vertical Etch of Silicon Dioxide using Ruthenium Films as an Etch Mask" (JVST-A, 2021)]]

=[[Oxford ICP Etcher (PlasmaPro 100 Cobra)]]=

=== Process Tips ===
* Use the Santovac oil for mounting small pieces to Silicon carrier wafers, or else your resist will burn! Increases thermal conduction to the cooled carrier wafer. (Full-wafers instead get direct Helium cooling.) Careful that the oil does not get anywhere near the outer clamp that holds the wafer down, or your wafer will get stuck.
** The oil fully dissolves in Acetone or NMP. You can clean oil off the back by wiping the back of the sample against an ACE-soaked wipe.
* InP requires fairly high temperatures for making the Indium products volatile - so going to full-wafers (which are cooler) may requiring the table temperature. We have found that temperatures of ~150⁰C minimum may be required for preventing grassing etc.
* See the '''Process Control sections below''' - [[Process Group Interns|NanoFab Interns]] run Etches Weekly, tracked over time.
** This tells you whether the chamber and tool are operating properly before you run your etch.
** You can follow the intern's travelers for details of their etch.

==InP Ridge Etch (Oxford ICP Etcher)==
===High-Temp (200°C) InP Etch Process===

*InP Ridge Etch 200°C - ''Noah Dutra & Fatt Foong, 2025-08-12''
**Etch rates ~2 um/min, Selectivity to SiO2 ~ 30:1, Sidewalls ~90°
**Very dependent on open area, more area => lower E.R.s
**Cal Sample: ~1cm sample etched with 1 quarter of blank 50mm InP seasoning wafer placed '''without''' mounting adhesive on blank Silicon carriers (rough side up).
**Recipe: Cl2/H2/Ar - 200°C

==== Process Control: High-Temp (200°C) InP Etch ====
[[File:200C InP.png|alt=example SPC chart for Oxford ICP Etcher|thumb|218x218px|[https://docs.google.com/spreadsheets/d/1LE5Cug9uJFYEwu0ZsNsp0W1dTRzcO2EKFhC0wu3w0n4/edit?gid=1804752281#gid=1804752281 Click for Process Control Charts] for 200°C InP Etch|link=https://docs.google.com/spreadsheets/d/1LE5Cug9uJFYEwu0ZsNsp0W1dTRzcO2EKFhC0wu3w0n4/edit?gid=1804752281#gid=1804752281]]''Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/H2/Ar @ 200°C, 1cm piece with ~50% SiO2 hardmask.''
*[https://docs.google.com/spreadsheets/d/1LE5Cug9uJFYEwu0ZsNsp0W1dTRzcO2EKFhC0wu3w0n4/edit?gid=0#gid=0 "Std InP Ridge Etch" Cl2/H2/Ar 200°C - '''Etch Data Tables''']
*[https://docs.google.com/spreadsheets/d/1LE5Cug9uJFYEwu0ZsNsp0W1dTRzcO2EKFhC0wu3w0n4/edit?gid=1804752281#gid=1804752281 "Std InP Ridge Etch" Cl2/H2/Ar 200°C - '''Plots''']

===Low-Temp (60°C) InP Etch Process===
*[[Media:Oxford Etcher - InP Ridge Etch using Oxford PlasmaPro 100 Cobra - 2021-09-08.pdf|Low-Temp InP Ridge Etch Characterization]] - ''Ning Cao, 2021-09-08''
**''No longer calibrating 60°C process as of 05-2025''.
**InP etches were characterized with '''no''' mounting adhesive used, 1/4-wafer of 50mm wafer placed on blank Silicon carriers (rough side up).
**Recipe: Cl2/CH4/H2 - 60°C
**NOTE: Rates in these 2021-09 characterizations are lower than current due to a software timing bug, fixed in 2022-01
*See [[Oxford ICP Etcher (PlasmaPro 100 Cobra)#Documentation|Operating Procedure]] for full traveler and post-cleaning.

==== Process Control: Low-Temp (60°C) InP Etch ====
[[File:Oxford-ICP-Etch Process Control Data Example.jpg|alt=example SPC chart for Oxford ICP Etcher|thumb|225x225px|[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 Click for Process Control Charts] for 60°C InP Etch|link=https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281]]
2025-08-12: No longer run as weekly cal process, replaced by above 200°C Cl2/H2/Ar etch. Data below is for historical purposes only.
''Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.''

*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit?usp=sharing "Std InP Ridge Etch" Cl2/CH4/H2/60°C - '''Etch Data Tables''']
*[https://docs.google.com/spreadsheets/d/1cEUB7K5BAg9N4vp3rPZw7g0orFkxeQmRkX34Fb4eZco/edit#gid=1804752281 "Std InP Ridge Etch" Cl2/CH4/H2/60°C - '''Plots''']

====[[Oxford Etcher - Sample Size Effect on Etch Rate|Sample Size effect on Etch Rate]]====
''See the above table for data showing effect on sample size/exposed etched area.''

==InP Grating Etch (Oxford ICP Etcher)==

*[[Media:Oxford Etcher - InP Grating Etch at 20 C - Oxford Cobra 300 2021-08-26.pdf|InP/InGaAsP Grating Etch Characterization]] - ''Ning Cao, 2021-08-26''
**InP/InGaAsP etches were characterized with '''no''' mounting adhesive used, 1/4-wafer of 50mm wafer placed on Silicon carriers (rough side up).
**Recipe: Cl2/CH4/H2/Ar - 20°C
**NOTE: Rates in these 2021-09 characterizations are lower than current due to a software timing bug, fixed in 2022-01
*See [[Oxford ICP Etcher (PlasmaPro 100 Cobra)#Documentation|Operating Procedure]] for full traveler and post-cleaning.

== GaN Etch (Oxford ICP Etcher) ==
*''OLD 4" configuration: [https://drive.google.com/file/d/1B-Xg254T-RdALisnms0jvpJQ34i5TNXN/view?usp=drive_link Std GaN Etch - BCl3/Cl2/Ar - 200C Etch Characterization] - G.G.Meena, 2024-11-01''
**Etches characterized on ~1cmx1cm die, on 4<nowiki>''</nowiki> Si carrier wafer. Die has a SiN hard mask.
**Also includes explanation of the Taguchi (L9) DOE method for learning how process variables interact.
**[https://docs.google.com/spreadsheets/d/1QELHE6VUgq-xIfwIE50ddnsDtm7yfiOM/edit?usp=drive_link&ouid=103527106727572807737&rtpof=true&sd=true Etch development traveler with detailed characterization data]
**See [[Oxford ICP Etcher (PlasmaPro 100 Cobra)#Documentation|Operating Procedure]] for full traveler and post-cleaning.

==== Process Control: GaN Etch ====
CURRENT Recipe: ''6" STD GaN Etch - BCl3/Cl2/Ar - 200C (Public)'', on 1cm x 1cm with 6" configuration, ''~850nm deep GaN Etch with Cl2/BCl3/Ar at 200°C. GaN-on-Sapphire substrate with SiN mask.''

* This recipe is the same as the 4" (old) Std recipe but with 140% flows. Current recipe is 200c, 4.5mT, 700W/50W, Cl2/Ar/BCl3 = 49.1/16.4/12.2sccm.

* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=0#gid=0 CURRENT 6" configuration: GaN Etching with Cl2/BCl3/Ar at 200°C - Etch Data]
* [https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 CURRENT 6" configuration: GaN Etching with Cl2/BCl3/Ar at 200°C - Plots]

[[File:GaN SPC.png|alt=example of Process Control Charts|thumb|[https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 Click for Process Control Charts] for GaN Etch|link=https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279|219x219px]]OLD Recipe: ''Std GaN Etch - BCl3/Cl2/Ar - 200C (Public)'', on 1cm x 1cm with 4" configuration, ''~1.2µm deep GaN etch with Cl2/BCl3/Ar at 200°C.'' ''GaN-on-Sapphire substrate with SiN mask.''
*[https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=0#gid=0 OLD 4" configuration: GaN Etching with Cl2/BCl3/Ar at 200°C - Etch Data]
*[https://docs.google.com/spreadsheets/d/1Pk8VwZlZ2lUf3aL9J2El5ZygqHY040TX3ZAMwa33LpE/edit?gid=507237279#gid=507237279 OLD 4" configuration: GaN Etching with Cl2/BCl3/Ar at 200°C - Plots]
==GaAs Etch (Oxford ICP Etcher)==
*''[https://drive.google.com/file/d/1Q4pmX5M9v9dCD1xOg74kYguV12Szh9be/view?usp=drive_link Std GaAs Etch - BCl3/Ar - 20C Etch Characterization] - G.G.Meena, 2025-01-09''
**Etch characterization on 1cmx1cm die, on 4<nowiki>''</nowiki> Si carrier wafer. Die has SiO hard mask
**Also tested etch with PR mask.
**See [[Oxford ICP Etcher (PlasmaPro 100 Cobra)#Documentation|Operating Procedure]] for full traveler and post-cleaning
*''[https://wiki.nanofab.ucsb.edu/w/images/d/d1/GaAs_Etch_Ver3_Recipe_Finalized_120925.pdf Std GaAs Etch - Cl2/N2 - 30C Etch Characterization] - F. Foong, 2025-12-10''
**Etch characterization on 1cmx1cm die, on 4<nowiki>''</nowiki> Si carrier wafer. Die has SiO hard mask
**See [[Oxford ICP Etcher (PlasmaPro 100 Cobra)#Documentation|Operating Procedure]] for full traveler and post-cleaning

==GaN Atomic Layer Etching (Oxford ICP Etcher)==
''GaN-ALE Recipe written and tested by users - contact [[Tony Bosch|supervisor]] for use.''

==Cleaning Recipes (Oxford ICP Etcher)==
'''''To Be Added: Required cleaning time & recipes'''''

Tutorials

2026-06-13T01:29:24Z

John d: /* General Fabrication */

The following are various tutorials from our NanoFab Wiki, collected here for your convenience.

__TOC__

== General Fabrication ==

* [[Processing - How Do I…?]] ← This page attempts to list common solutions to fabrication issues our lab users often run into.
* [https://drive.google.com/file/d/1B-Xg254T-RdALisnms0jvpJQ34i5TNXN/view Design of Experiments: Taguchi/L9 DOE methods] - [[Gopikrishnan G M|Gopi]] explains how to identify trends in your process, using multi-variable experiments (to minimize the number of experiments). Do this when you don't have a good physical understanding of how the process variables interact.
== Fabrication Tracking and Process Design ==
Designing experiments, tracking your fabrication steps/process improvements, and keeping track of your results are key to achieving repeatable and improved results!

[[Processing - How Do I…?#Experiment%20Setup|<big>'''Processing: Experiment Setup'''</big>]]

See the above ↑ tutorial pages for examples of:

* [[Processing - How Do I…?#Travelers (aka. RunCards, Process Followers, Work Instructions)|Process Travelers/RunCards/Followers]] - ''Write your process and track what you actually did during the fab''
* [[Processing - How Do I…?#Design of Experiments (DOE)|Design of Experiments]] - ''Develop/optimize a fab step''
* [[Processing - How Do I…?#Tracking your processes|Manufacturing Execution Systems]] - ''Track all your designs, fab runs and experiment results, so you can iterate.''

{| class="wikitable"
|+Examples of Trello + Google Drive for tracking fabrication jobs
|[[File:Trello - Example Job Cards.png|alt=Trello - Example Job Cards screenshot|none|thumb|367x367px|Tracking to-do and completed tasks.]][[File:Google Drive - Example Job Folder.png|alt=Google Drive - Example Job Folder screenshot|none|thumb|327x327px|Example Job Folder on Google Drive with in-process traveler, microscope/SEM images, testing results etc.]]
|[[File:Trello - example job card.png|alt=Trello - example job card screenshot|none|thumb|504x504px|Example job card for a fabrication run.]]
|}

== CAD/Drawing Mask Plates ==
:Here are pages to help you design your devices in drawing programs, and make photomasks (aka. "masks" or "reticles") for various systems in our lab.[[File:CAD Tutorial for ASML Reticle v1 - screenshot Device Layout cell.png|alt=screenshot of KLayout view of Device_Layout|thumb|300x300px|KLayout: example CAD file.]]
Microfabrication CAD drawings are simple 2D drawings with layers, even though they are intended to become 3D devices through the fabrication process. The fabrication is all top-down, hence only 2D patterning is used.

* [[Calculators + Utilities#CAD%20Layout%20and%20Mask%20Design|Calculators + Utilities > CAD Layout and Mask Design]] - links to drawing programs and tutorials
* [[Calculators + Utilities#CAD%20Design%20Tips|Calculators + Utilities > CAD Design Tips]] - key concepts you should utilize in your drawings, and tips for setting up your CAD programs
* [[Calculators + Utilities#Example%20CAD%20File|Calculators + Utilities > Example CAD File]] - example stepper mask CAD files, including advanced layout for multiple experiments.
* [[Calculators + Utilities#CAD%20Files%20%26%20Templates|Calculators + Utilities > CAD Files & Templates]] - example GDS/OAS files for various useful structures (alignment marks, verniers, fonts etc)

== Mask Making Guidelines ==
''Info for mask/CAD layout for specific tools.''

==== General ====
* [[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.
* See [[Tutorials#CAD/Drawing Mask Plates|CAD tutorials above]] for layout tips and examples.
* [[Tutorial - How Photomasks are Made]] - this will help you submit your mask orders and clear up common misconceptions.

==== Stepper Mask Tutorials ====
[[File:Stepper Reticle Tutorial - Reticle Masking Schematic.png|alt=Schematic of stepper blocking off adjacent Images on reticle and exposure onto different wafer locations.|thumb|'''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Click for Stepper Reticle Tutorial]''' Stepper Reticle Patterns (“images”) can optionally be much more sophisticated and flexible than contact plates.|link=https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]]

* '''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Stepper Reticle Layout vs Wafer Layout (Demis D. John)]''' ''-'' explains how Stepper mask layout is very different than other litho systems.
* '''[[Stepper Reticle Layout (Advanced) - Complex Experiments and Variations]]''' - If you need many design variations on your wafer.

==== Steppers ====
* [[Stepper Mask-Making Guidelines (Generic)|Stepper Mask-Making Guidelines]] - Info needed to design and order a reticle for our Stepper systems.
* [https://docs.google.com/document/d/1b9YT11RPsl-UlLvN74hrQvG01OcYDL16r6I5lPOlBEo/edit?usp=sharing ASML-specific Mask Making Guidelines (Private)] - More detailed info to design and order a reticle for this specific ASML system.
** ''Access is restricted to trained users only by ASML's requirement - please contact [[Demis D. John|tool supervisor]] for access.''

* [[Autostep 200 Mask Making Guidance]] - information on designing and ordering your photomasks for the GCA AutoStep 200.
* [[GCA 6300 Mask Making Guidance]] (''Work in progress'') - GCA 6300 Stepper

==== Contact Aligners ====
* [[Mask Making Guidelines for Contact Aligners|Mask Making Guidelines - Contact Masks]] - for the MJB-3 & MA6 Contact Aligners

==== Direct-Write ====
* [[MLA150 - Design Guidelines]] - for the Heidelberg MLA150 Direct-Writer

== Lithography Tutorials ==
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Lithography Calibration - Analyzing a Focus-Exposure Matrix (FEM)]] - Projection litho systems (steppers, direct-writers) usually require a lithography calibration, using a Focus-Exposure Matrix/Array (FEM/FEA).
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}} - How it works, process limits and considerations for designing your process.

Tutorials

2026-06-13T01:27:56Z

John d: /* General Fabrication */ added GOpis Taguchi-L9 tutorial, and moved general fab to the top

The following are various tutorials from our NanoFab Wiki, collected here for your convenience.

__TOC__

== General Fabrication ==

* [[Processing - How Do I…?]] ← This page attempts to list common solutions to fabrication issues our lab users often run into.
* [https://drive.google.com/file/d/1B-Xg254T-RdALisnms0jvpJQ34i5TNXN/view Design of Experiments: Taguchi or L9 DOE methods] - [[Gopikrishnan G M|Gopi]] explains how to identify trends in your process, using multi-variable variations (to minimize the number of experiments). Do this when you don't have a good physical understanding of how the process variable interact.
== Fabrication Tracking and Process Design ==
Designing experiments, tracking your fabrication steps/process improvements, and keeping track of your results are key to achieving repeatable and improved results!

[[Processing - How Do I…?#Experiment%20Setup|<big>'''Processing: Experiment Setup'''</big>]]

See the above ↑ tutorial pages for examples of:

* [[Processing - How Do I…?#Travelers (aka. RunCards, Process Followers, Work Instructions)|Process Travelers/RunCards/Followers]] - ''Write your process and track what you actually did during the fab''
* [[Processing - How Do I…?#Design of Experiments (DOE)|Design of Experiments]] - ''Develop/optimize a fab step''
* [[Processing - How Do I…?#Tracking your processes|Manufacturing Execution Systems]] - ''Track all your designs, fab runs and experiment results, so you can iterate.''

{| class="wikitable"
|+Examples of Trello + Google Drive for tracking fabrication jobs
|[[File:Trello - Example Job Cards.png|alt=Trello - Example Job Cards screenshot|none|thumb|367x367px|Tracking to-do and completed tasks.]][[File:Google Drive - Example Job Folder.png|alt=Google Drive - Example Job Folder screenshot|none|thumb|327x327px|Example Job Folder on Google Drive with in-process traveler, microscope/SEM images, testing results etc.]]
|[[File:Trello - example job card.png|alt=Trello - example job card screenshot|none|thumb|504x504px|Example job card for a fabrication run.]]
|}

== CAD/Drawing Mask Plates ==
:Here are pages to help you design your devices in drawing programs, and make photomasks (aka. "masks" or "reticles") for various systems in our lab.[[File:CAD Tutorial for ASML Reticle v1 - screenshot Device Layout cell.png|alt=screenshot of KLayout view of Device_Layout|thumb|300x300px|KLayout: example CAD file.]]
Microfabrication CAD drawings are simple 2D drawings with layers, even though they are intended to become 3D devices through the fabrication process. The fabrication is all top-down, hence only 2D patterning is used.

* [[Calculators + Utilities#CAD%20Layout%20and%20Mask%20Design|Calculators + Utilities > CAD Layout and Mask Design]] - links to drawing programs and tutorials
* [[Calculators + Utilities#CAD%20Design%20Tips|Calculators + Utilities > CAD Design Tips]] - key concepts you should utilize in your drawings, and tips for setting up your CAD programs
* [[Calculators + Utilities#Example%20CAD%20File|Calculators + Utilities > Example CAD File]] - example stepper mask CAD files, including advanced layout for multiple experiments.
* [[Calculators + Utilities#CAD%20Files%20%26%20Templates|Calculators + Utilities > CAD Files & Templates]] - example GDS/OAS files for various useful structures (alignment marks, verniers, fonts etc)

== Mask Making Guidelines ==
''Info for mask/CAD layout for specific tools.''

==== General ====
* [[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.
* See [[Tutorials#CAD/Drawing Mask Plates|CAD tutorials above]] for layout tips and examples.
* [[Tutorial - How Photomasks are Made]] - this will help you submit your mask orders and clear up common misconceptions.

==== Stepper Mask Tutorials ====
[[File:Stepper Reticle Tutorial - Reticle Masking Schematic.png|alt=Schematic of stepper blocking off adjacent Images on reticle and exposure onto different wafer locations.|thumb|'''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Click for Stepper Reticle Tutorial]''' Stepper Reticle Patterns (“images”) can optionally be much more sophisticated and flexible than contact plates.|link=https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]]

* '''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Stepper Reticle Layout vs Wafer Layout (Demis D. John)]''' ''-'' explains how Stepper mask layout is very different than other litho systems.
* '''[[Stepper Reticle Layout (Advanced) - Complex Experiments and Variations]]''' - If you need many design variations on your wafer.

==== Steppers ====
* [[Stepper Mask-Making Guidelines (Generic)|Stepper Mask-Making Guidelines]] - Info needed to design and order a reticle for our Stepper systems.
* [https://docs.google.com/document/d/1b9YT11RPsl-UlLvN74hrQvG01OcYDL16r6I5lPOlBEo/edit?usp=sharing ASML-specific Mask Making Guidelines (Private)] - More detailed info to design and order a reticle for this specific ASML system.
** ''Access is restricted to trained users only by ASML's requirement - please contact [[Demis D. John|tool supervisor]] for access.''

* [[Autostep 200 Mask Making Guidance]] - information on designing and ordering your photomasks for the GCA AutoStep 200.
* [[GCA 6300 Mask Making Guidance]] (''Work in progress'') - GCA 6300 Stepper

==== Contact Aligners ====
* [[Mask Making Guidelines for Contact Aligners|Mask Making Guidelines - Contact Masks]] - for the MJB-3 & MA6 Contact Aligners

==== Direct-Write ====
* [[MLA150 - Design Guidelines]] - for the Heidelberg MLA150 Direct-Writer

== Lithography Tutorials ==
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Lithography Calibration - Analyzing a Focus-Exposure Matrix (FEM)]] - Projection litho systems (steppers, direct-writers) usually require a lithography calibration, using a Focus-Exposure Matrix/Array (FEM/FEA).
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}} - How it works, process limits and considerations for designing your process.

Research

2026-06-12T00:31:55Z

John d: AI gen statement

<div style="border: 2px solid #003660; border-radius: 8px; padding: 20px; margin-bottom: 20px; background: linear-gradient(135deg, #f8f9fa 0%, #e8eef5 100%);">
<div style="font-size: 1.6em; font-weight: bold; color: #003660; margin-bottom: 8px;">UCSB Nanofabrication Facility — Research Groups & Publications</div>
<div style="font-size: 1.05em; color: #444;">A curated directory of research groups utilizing the [https://www.nanotech.ucsb.edu/ UCSB Nanofab], organized by discipline. Each section highlights recent high-impact publications and representative research imagery.</div>
<div style="margin-top: 10px; font-size: 0.9em; color: #666;">''Last updated: April 2026 - AI Generated, please excuse any errors!''</div>
</div>

__TOC__





== Photonics and Integrated Optics ==

<div style="border-left: 4px solid #0077b6; padding-left: 12px; margin-bottom: 10px; color: #333;">
''Silicon photonics, III-V integration, optical communications, nanophotonic devices, and metasurfaces — enabling next-generation data links, sensing, and on-chip light manipulation.''
</div>



=== Optical Communications & Photonic Integration Group — Prof. Daniel Blumenthal ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=4yjw1ecAAAAJ Prof. Daniel Blumenthal] (Google Scholar) • [https://ocpi.ece.ucsb.edu/ Group Website]

Develops ultra-low-loss silicon nitride (Si3N4) photonic integrated circuits for stimulated Brillouin lasers, optical gyroscopes, optical frequency synthesis, and emerging atom-photonic quantum integration on chip.

'''Selected Recent Publications:'''
* ''Integrated optical frequency division for microwave and mmWave generation'' — '''Nature''' 627, 540–545 (2024). [https://doi.org/10.1038/s41586-024-07057-0 DOI]
* ''Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth'' — '''Optics Letters''' 49(1), 45–48 (2024). [https://doi.org/10.1364/OL.503126 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Blumenthal_SiN_coil_resonator.jpg|thumb|300px|Ultra-low-loss silicon nitride photonic coil resonator chip used for Brillouin lasers and high-Q resonators.]]
[[File:2026-04-24_research_Blumenthal_PZT_SiN_microcomb.png|thumb|300px|PZT-integrated silicon nitride microcomb resonator for chip-based optical frequency division.]]
</td>
</tr>
</table>



=== Silicon Photonics, AIM Photonics & Institute for Energy Efficiency — Prof. John Bowers ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=c6rbVa0AAAAJ Prof. John Bowers] (Google Scholar) • [https://siliconphotonics.ece.ucsb.edu/ Silicon Photonics] • [https://aim.ucsb.edu AIM Photonics] • [https://iee.ucsb.edu IEE]

Leads research on heterogeneous integration of III-V materials on silicon for lasers, amplifiers, and modulators, as well as advanced silicon photonic platforms for datacom, telecom, and ultra-narrow-linewidth laser sources.

'''Selected Recent Publications:'''
* ''Roadmapping the next generation of silicon photonics'' — '''Nature Communications''' 15, 751 (2024). [https://doi.org/10.1038/s41467-024-44750-0 DOI]
* ''Lithium niobate photonics: Unlocking the electromagnetic spectrum'' — '''Science''' 379(6627) (2023). [https://doi.org/10.1126/science.abj4396 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Bowers_3D_PIC_integration.png|thumb|300px|3D photonic integrated circuit: heterogeneous III-V on silicon architecture without an isolator (Nature, 2023).]]
[[File:2026-04-24_research_Bowers_racetrack_resonator.jpg|thumb|300px|Novel conjoined racetrack resonator geometry for silicon photonics.]]
</td>
</tr>
</table>



=== Integrated Photonics Laboratory — Prof. Jonathan Klamkin ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=vR_K3XYAAAAJ Prof. Jonathan Klamkin] (Google Scholar) • [https://web.ece.ucsb.edu/ipl Group Website]

Specializes in III-V photonic integrated circuits for free-space optical communications, LiDAR, microwave photonics, and monolithic integration of III-V quantum dot lasers on silicon via selective area heteroepitaxy.

'''Selected Recent Publications:'''
* ''Selective area heteroepitaxy of low dislocation density antiphase boundary free GaAs microridges on flat-bottom (001) Si for integrated silicon photonics'' — '''Applied Physics Letters''' 118, 122106 (2021). [https://doi.org/10.1063/5.0043027 DOI]
* ''Towards fully monolithic silicon-based integrated photonics: MOCVD grown lasers on silicon by blanket and selective area heteroepitaxy'' — '''Proc. SPIE''' (Photonics West, 2022). [https://doi.org/10.1117/12.2610644 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Klamkin_3D_hybrid_SiPh.jpg|thumb|300px|3D hybrid integrated silicon photonics platform merging InP and GaAs devices with SiPh.]]
[[File:2026-04-24_research_Klamkin_free_space_optical_comms.jpg|thumb|300px|Laser communication terminal for free-space optical links (NASA-funded research).]]
</td>
</tr>
</table>



=== Schow Lab ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=cVY3g4cAAAAJ Prof. Clint Schow] (Google Scholar) • [https://schow.ece.ucsb.edu/ Group Website]

Develops energy-efficient optical interconnects for data centers, with emphasis on analog coherent detection architectures that eliminate power-hungry DSP, leveraging silicon photonics and co-packaged optics.

'''Selected Recent Publications:'''
* ''A Monolithic O-Band Coherent Optical Receiver for Energy-Efficient Links'' — '''IEEE Journal of Solid-State Circuits''' 59(5) (2024). [https://doi.org/10.1109/JSSC.2023.3339494 DOI]
* ''Analog Coherent Detection for Energy Efficient Intra-Data Center Links at 200 Gbps Per Wavelength'' — '''Journal of Lightwave Technology''' 39(2) (2021). [https://doi.org/10.1109/JLT.2020.3029788 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Schow_coherent_optical_links.jpg|thumb|300px|Low-power coherent optical links for datacenter interconnects.]]
[[File:2026-04-24_research_Schow_cryogenic_optical_links.jpg|thumb|300px|Cryogenic silicon photonic optical links for classical and quantum computing.]]
</td>
</tr>
</table>



=== Schuller Lab ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=Ff90s74AAAAJ Prof. Jon Schuller] (Google Scholar) • [https://schuller.cnsi.ucsb.edu/ Group Website]

Investigates light-matter interactions at the nanoscale, designing dielectric and semiconductor metasurfaces for directional light emission, magneto-optical traps, and active reconfigurable photonic devices.

'''Selected Recent Publications:'''
* ''High efficiency large-angle polarization-insensitive retroreflecting metasurface for magneto-optical traps'' — '''Applied Physics Letters''' 124, 251704 (2024). [https://doi.org/10.1063/5.0210124 DOI]
* ''Optimizing Polarization Selective Unidirectional Photoluminescence from Phased-Array Metasurfaces'' — '''Advanced Optical Materials''' (2024). [https://doi.org/10.1002/adom.202303186 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Schuller_crystal_microstructures.jpg|thumb|300px|Hybrid organic/inorganic crystalline microstructures with quantum-confinement-induced red luminescence.]]
[[File:2026-04-24_research_Schuller_metasurface_beam_deflector.jpg|thumb|300px|Tunable dielectric metasurface beam deflector for engineered light steering.]]
</td>
</tr>
</table>





== Quantum Computing, Quantum Sensing & Quantum Materials ==

<div style="border-left: 4px solid #7b2d8e; padding-left: 12px; margin-bottom: 10px; color: #333;">
''Quantum optics, entangled photon sources, NV-center sensing, topological qubits, and correlated electron systems — building the hardware foundations for quantum information science.''
</div>



=== Quantum Optics & Quantum Information Group — Prof. Dirk Bouwmeester ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=r92BS5wAAAAJ Prof. Dirk Bouwmeester] (Google Scholar) • [https://bouwmeestergroup.physics.ucsb.edu Group Website]

Explores quantum optics and cavity quantum electrodynamics with semiconductor quantum dots, optomechanical systems using phononic crystal membranes, and quantum decoherence phenomena.

'''Selected Recent Publications:'''
* ''Single-emitter quantum key distribution over 175 km of fibre with optimised finite key rates'' — '''Nature Communications''' 14, 3573 (2023). [https://doi.org/10.1038/s41467-023-39219-5 DOI]
* ''Phononically shielded multi-wavelength photonic-crystal membrane for cavity quantum optomechanics'' — '''Optics Express''' 33(4), 8203 (2025). [https://doi.org/10.1364/OE.550826 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Bouwmeester_phononic_crystal_membrane_SEM.jpg|thumb|300px|SEM image of a phononic crystal membrane fabricated for optomechanical experiments (silicon nitride or diamond).]]
[[File:2026-04-24_research_Bouwmeester_QD_microcavity_defect.jpg|thumb|300px|Dark-field optical image of a quantum dot microcavity device showing the defect region of a photonic crystal structure.]]
</td>
</tr>
</table>



=== Quantum Photonics Laboratory — Prof. Galan Moody ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=FLokITkAAAAJ Prof. Galan Moody] (Google Scholar) • [https://qpl.ece.ucsb.edu Group Website]

Develops integrated quantum photonic devices on chip-scale platforms, including entangled photon-pair sources from microring resonators, 2D material quantum emitters, and scalable single-photon technologies for quantum networking.

'''Selected Recent Publications:'''
* ''2022 Roadmap on integrated quantum photonics'' — '''Journal of Physics: Photonics''' 4, 012501 (2022). [https://doi.org/10.1088/2515-7647/ac1ef4 DOI]
* ''Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K'' — '''Nature Communications''' 12, 3585 (2021). [https://doi.org/10.1038/s41467-021-23709-5 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Moody_QPL_Cisco_entanglement_chip.jpg|thumb|300px|Packaged AlGaAs-on-insulator photonic integrated circuit (PIC) with entangled-pair sources, delivered to Cisco Quantum Labs for quantum networking.]]
[[File:2026-04-24_research_Moody_QPL_AlGaAs_ring_array_2025.jpg|thumb|300px|AlGaAsOI microresonator ring array for high-rate time- and frequency-bin entanglement generation (from PRX Quantum 2025 publication).]]
</td>
</tr>
</table>



=== Quantum Sensing & Imaging Group — Prof. Ania Jayich ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=EKElikcAAAAJ Prof. Ania Bleszynski Jayich] (Google Scholar) • [https://www.10-9lab.com/ Group Website (10−9 Lab)]

Engineers nitrogen-vacancy (NV) centers in diamond for ultra-sensitive nanoscale magnetometry and quantum sensing. Recent breakthroughs leverage many-body quantum dynamics for signal amplification in solid-state quantum sensors.

'''Selected Recent Publications:'''
* ''Signal amplification in a solid-state sensor through asymmetric many-body echo'' — '''Nature''' 646, 68–73 (2025). [https://doi.org/10.1038/s41586-025-09452-7 DOI]
* ''Scalable nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures'' — '''Nature Communications''' 16 (2025). [https://doi.org/10.1038/s41467-025-64758-4 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Jayich_NV_diamond_scanning_probe.jpg|thumb|300px|Diamond scanning probe tip with a single NV center, used for nanoscale magnetometry (pillar-cantilever geometry).]]
[[File:2026-04-24_research_Jayich_NV_magnetometry_scan.jpg|thumb|300px|Scanning NV magnetometry image showing nanoscale magnetic field mapping of a condensed matter sample.]]
</td>
</tr>
</table>



=== Palmstrom Group ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=c-B7OFcAAAAJ Prof. Chris Palmstrom] (Google Scholar) • [https://palmstrom.cnsi.ucsb.edu/ Group Website]

Grows quantum materials by molecular beam epitaxy (MBE), including III-V semiconductor heterostructures, Heusler compounds, and superconductor/semiconductor hybrids for topological quantum computing and superconducting circuits.

'''Selected Recent Publications:'''
* ''Cryogenic Growth of Tantalum Thin Films for Low-Loss Superconducting Circuits'' — '''Physical Review Applied''' 23(3), 034025 (2025). [https://doi.org/10.1103/PhysRevApplied.23.034025 DOI]
* ''Fabrication and Characterization of Low-Loss Al/Si/Al Parallel Plate Capacitors for Superconducting Quantum Information Applications'' — '''npj Quantum Information''' 11 (2025). [https://doi.org/10.1038/s41534-025-00967-5 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Palmstrom_Sn_InAs_Josephson_junction_nanowire.jpeg|thumb|300px|SEM/false-color image of Sn/InAs Josephson junctions on selective area grown nanowires with in-situ shadowed superconductor evaporation.]]
[[File:2026-04-24_research_Palmstrom_CryoMBE_chamber.jpg|thumb|300px|Scienta Omicron EVO 50 Cryo-MBE chamber for growing superconductors at cryogenic substrate temperatures (below 20 K).]]
</td>
</tr>
</table>



=== Young Lab ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=EbqS1EoAAAAJ Prof. Andrea Young] (Google Scholar) • [https://www.afylab.com/ Group Website]

Investigates correlated electronic phases in van der Waals heterostructures, including superconductivity, magnetism, and quantum Hall physics in graphene-based systems using nanofabrication and low-temperature transport measurements.

'''Selected Recent Publications:'''
* ''Superconductivity in rhombohedral trilayer graphene'' — '''Nature''' 598, 434–438 (2021). [https://doi.org/10.1038/s41586-021-03926-0 DOI]
* ''Isospin magnetism and spin-polarized superconductivity in Bernal bilayer graphene'' — '''Science''' 375(6582) (2022). [https://doi.org/10.1126/science.abm8386 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Young_nanoSQUID_tip_probe.jpg|thumb|300px|NanoSQUID-on-tip probe and tuning fork assembly used for cryogenic scanning magnetic and thermal imaging of quantum materials.]]
[[File:2026-04-24_research_Young_nanoSQUID_AC_sweep_scan.png|thumb|300px|NanoSQUID scanning image of a van der Waals heterostructure device, showing AC susceptibility mapping (likely graphene fractional quantum Hall system).]]
</td>
</tr>
</table>





== High-Speed Electronics & RF ==

<div style="border-left: 4px solid #d4380d; padding-left: 12px; margin-bottom: 10px; color: #333;">
''Sub-THz transistors, 2D-material nanoelectronics, and advanced CMOS architectures — driving the next generation of wireless communications and computing.''
</div>



=== High Speed Electronics Group — Prof. Mark Rodwell ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=u_C8sbEAAAAJ Prof. Mark Rodwell] (Google Scholar) • [https://web.ece.ucsb.edu/Faculty/rodwell/ Group Website]

Develops InP heterojunction bipolar transistor (HBT) integrated circuits and transceiver modules operating at 100–300 GHz for next-generation sub-THz wireless communication systems with multi-Gbps data rates.

'''Selected Recent Publications:'''
* ''100–300 GHz Wireless: Transistors, ICs, and Systems'' — '''IEEE Microwave Magazine''' (2025). [https://doi.org/10.1109/MMM.2025.3584028 DOI]
* ''A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB NF'' — '''IEEE RFIC Symposium''' (2023). [https://doi.org/10.1109/RFIC54547.2023.10186179 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Rodwell_InP_HBT_CrossSection_SEM.jpg|thumb|300px|Cross-sectional SEM of a UCSB InP HBT showing sub-micron emitter, base, and collector mesa layers.]]
[[File:2026-04-24_research_Rodwell_THz_Transceiver_IC.jpg|thumb|300px|130 nm InP HBT transceiver IC layout for 100–300 GHz wireless systems.]]
</td>
</tr>
</table>



=== Nanoelectronics Research Lab — Prof. Kaustav Banerjee ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=zkZqDDcAAAAJ Prof. Kaustav Banerjee] (Google Scholar) • [https://nrl.ece.ucsb.edu/ Group Website]

Pioneers 2D material-based transistor architectures for future CMOS scaling, including 3D transistors with 2D semiconductors, neuromorphic computing platforms using tunnel-FETs, and cryogenic CMOS for quantum computing.

'''Selected Recent Publications:'''
* ''Three-dimensional Transistors with Two-dimensional Semiconductors for Future CMOS Scaling'' — '''Nature Electronics''' (2024). [https://doi.org/10.1038/s41928-024-01289-8 DOI]
* ''An Ultra Energy-efficient Hardware Platform for Neuromorphic Computing Enabled by 2D-TMD Tunnel-FETs'' — '''Nature Communications''' (2024). [https://doi.org/10.1038/s41467-024-46397-3 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Banerjee_Graphene_Kinetic_Inductor.jpg|thumb|300px|Intercalated multilayer graphene on-chip spiral inductors — the first kinetic inductors achieving 1.5× higher inductance density than copper.]]
[[File:2026-04-24_research_Banerjee_2D_3D_NanoplateFET.png|thumb|300px|3D nano-plate FET architecture using 2D WS2 semiconductors in gate-all-around configuration.]]
</td>
</tr>
</table>





== Wide-Bandgap Semiconductors & Power Electronics ==

<div style="border-left: 4px solid #389e0d; padding-left: 12px; margin-bottom: 10px; color: #333;">
''GaN and Ga2O3 devices for solid-state lighting, micro-LEDs, laser diodes, and high-voltage power conversion — from Nobel Prize-winning blue LEDs to next-generation ultra-wide-bandgap power electronics.''
</div>



=== Krishnamoorthy Research Group ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=msxQ2fYAAAAJ Prof. Sriram Krishnamoorthy] (Google Scholar) • [https://sites.google.com/view/krishnamoorthygroup/home Group Website]

Advances ultra-wide-bandgap semiconductor device technology, particularly β-Ga2O3 power electronics including kilovolt-class MOSFETs and Schottky barrier diodes grown by MOCVD for high-voltage, high-efficiency power conversion.

'''Selected Recent Publications:'''
* ''Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates'' — '''Applied Physics Letters''' (2024). [https://doi.org/10.1063/5.0191366 DOI]
* ''2.1 kV (001)-β-Ga2O3 Vertical Schottky Barrier Diode with High-k Oxide Field Plate'' — '''Applied Physics Letters''' (2023). [https://doi.org/10.1063/5.0137935 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Krishnamoorthy_Ga2O3_TriGate_MESFET.jpg|thumb|300px|Wide-bandgap semiconductor device research: GaN/Ga2O3 power electronics for high-voltage, high-efficiency power conversion.]]
[[File:2026-04-24_research_Krishnamoorthy_Ga2O3_SiC_MOSFET.jpg|thumb|300px|Advanced materials research at UCSB CNSI for ultra-wide-bandgap semiconductor devices.]]
</td>
</tr>
</table>



=== Solid State Lighting & Electronic Center (SSLEEC) — Prof. Steven DenBaars & Prof. Shuji Nakamura ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''Directors:''' [https://scholar.google.com/citations?user=CO1qY8cAAAAJ Prof. Steven DenBaars] (Google Scholar) • [https://scholar.google.com/citations?user=7Esq3V8AAAAJ Prof. Shuji Nakamura] (Nobel Laureate, 2014 — Google Scholar) • [https://ssleec.ucsb.edu/ SSLEEC Website]

Leads development of III-nitride (InGaN/GaN) optoelectronic devices including micro-LEDs scaled to the single-micron regime for AR/VR displays, edge-emitting laser diodes, and advanced LED architectures with metasurface and distributed Bragg reflector integration.

'''Selected Recent Publications:'''
* ''High External Quantum Efficiency in Ultra-small Amber InGaN MicroLEDs Scaled to 1 μm'' — '''Applied Physics Letters''' (2024). [https://doi.org/10.1063/5.0235915 DOI]
* ''Metasurface Light-Emitting Diodes with Directional and Focused Emission'' — '''Nano Letters''' (2023). [https://doi.org/10.1021/acs.nanolett.3c03272 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_SSLEEC_MicroLED_DBR_SEM.png|thumb|300px|Comparison of 1 μm InGaN/GaN micro-LED with a human hair, demonstrating ultra-small scale device fabrication for AR/VR displays.]]
[[File:2026-04-24_research_SSLEEC_GaN_LED_DeviceStack.jpg|thumb|300px|SSLEEC optical bench with III-nitride LED/laser characterization equipment. Photo: Prof. Shuji Nakamura.]]
</td>
</tr>
</table>





== Advanced Materials & Novel Devices ==

<div style="border-left: 4px solid #d48806; padding-left: 12px; margin-bottom: 10px; color: #333;">
''Topological semimetals, memristive crossbar arrays, plasma nanoscience, and neuromorphic hardware — pushing the boundaries of materials science and unconventional computing architectures.''
</div>



=== Stemmer Research Group ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=XFlNLAsAAAAJ Prof. Susanne Stemmer] (Google Scholar) • [https://stemmer.materials.ucsb.edu/ Group Website]

Investigates quantum materials including functional and correlated complex oxides and topological semimetals, with emphasis on thin-film epitaxial growth (MBE), quantum transport, and electronic structure engineering at heterostructure interfaces.

'''Selected Recent Publications:'''
* ''Two-Dimensional Topological Insulator State in Cadmium Arsenide Thin Films'' — '''Physical Review Letters''' 130, 046201 (2023). [https://doi.org/10.1103/PhysRevLett.130.046201 DOI]
* ''Similarity in the Critical Thicknesses for Superconductivity and Ferroelectricity in Strained SrTiO3 Films'' — '''Applied Physics Letters''' (2022). [https://doi.org/10.1063/5.0096834 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Stemmer_Cd3As2_HAADF_STEM.jpg|thumb|300px|Stemmer Research Group banner: MBE-grown quantum materials and topological semimetal thin films.]]
[[File:2026-04-24_research_Stemmer_SrTiO3_QSTEM_Vacancy.jpg|thumb|300px|Advanced characterization tools and discovery science at UCSB CNSI for quantum materials research.]]
</td>
</tr>
</table>



=== Strukov Research Group ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=SbPe9WEAAAAJ Prof. Dmitri Strukov] (Google Scholar) • [https://sites.google.com/site/strukov/home Group Website]

Develops novel memristive (resistive switching) devices and hybrid CMOS/memristor circuits for neuromorphic computing, in-memory computing, and hardware accelerators for neural networks and optimization problems.

'''Selected Recent Publications:'''
* ''Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems'' — '''ACS Nano''' (2023). [https://doi.org/10.1021/acsnano.3c03505 DOI]
* ''4K-Memristor Analog-Grade Passive Crossbar Circuit'' — '''Nature Communications''' 12 (2021). [https://doi.org/10.1038/s41467-021-25455-0 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Strukov_4K_Memristor_Crossbar_SEM.png|thumb|300px|SEM of a 64×64 passive memristive crossbar array (4,096 devices) with Ti/Al/TiN electrodes and Al2O3/TiO2-x switching layers.]]
[[File:2026-04-24_research_Strukov_Memristor_Einstein_Conductance.png|thumb|300px|4K-pixel grayscale Einstein image programmed into the memristive crossbar with <4% tuning error, demonstrating analog-grade conductance control.]]
</td>
</tr>
</table>



=== Gordon Lab ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=HUM5shgAAAAJ Prof. Michael J. Gordon] (Google Scholar) • [http://sites.chemengr.ucsb.edu/~mjgordon/research/home.html Group Website]

Works on plasma science and engineering (atmospheric and non-thermal plasmas), catalysis in molten metals for methane pyrolysis and hydrogen production, and nanoscale fabrication including colloidal lithography and micro-LED characterization.

'''Selected Recent Publications:'''
* ''AC Plasmas Directly Excited in Liquid-Phase Hydrocarbons for H2 and Unsaturated C2 Hydrocarbon Production'' — '''Journal of the American Chemical Society''' 147(1) (2025). [https://doi.org/10.1021/jacs.4c11174 DOI]
* ''Dry Reforming of Methane Catalysed by Molten Metal Alloys'' — '''Nature Catalysis''' 3, 83–89 (2020). [https://doi.org/10.1038/s41929-019-0416-2 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Gordon_Plasma_Shadowgraph_Hexane.png|thumb|300px|Laser shadowgraph of plasma discharge in liquid hexane showing streamer propagation and shock waves for hydrogen production.]]
[[File:2026-04-24_research_Gordon_AC_Plasma_Hexane_Timelapse.jpg|thumb|300px|Gordon Lab research: Plasma science, catalysis, and nanoscale fabrication for hydrogen production and sustainable chemistry.]]
</td>
</tr>
</table>





== Microfluidics & MEMS ==

<div style="border-left: 4px solid #08979c; padding-left: 12px; margin-bottom: 10px; color: #333;">
''Nanofluidic transport, lab-on-chip biosensors, and microfabricated biomedical devices — bridging nanofabrication with biological and chemical applications.''
</div>



=== Pennathur Lab ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [https://scholar.google.com/citations?user=dVbZMA0AAAAJ Prof. Sumita Pennathur] (Google Scholar) • [https://nanolab.engineering.ucsb.edu/ Group Website]

Studies electrokinetic transport in nanofluidic channels, ionic current rectification in bipolar nanochannels, and the design of nanofluidic diodes and biosensors, combining experimental micro/nanofabrication with computational modeling.

'''Selected Recent Publications:'''
* ''Coupling Charge-Regulated Interfacial Chemistry to Electrokinetic Ion Transport in Bipolar SiO2–Al2O3 Nanofluidic Diodes'' — '''Advanced Materials Interfaces''' (2024). [https://doi.org/10.1002/admi.202400495 DOI]
* ''Nanofluidic Diodes Based on Asymmetric Bio-Inspired Surface Coatings in Straight Glass Nanochannels'' — '''Faraday Discussions''' (2023). [https://doi.org/10.1039/D3FD00074E DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Pennathur_Nanochannel_Embedded_Electrode.png|thumb|300px|Nanofluidic channel with embedded electrodes for electric double layer modulation and electroosmotic flow control.]]
[[File:2026-04-24_research_Pennathur_Silicon_Microneedle_SEM.png|thumb|300px|Silicon microneedle array fabricated using MEMS wet etching techniques for minimally invasive biofluid extraction.]]
</td>
</tr>
</table>





== Astronomical Instrumentation ==

<div style="border-left: 4px solid #531dab; padding-left: 12px; margin-bottom: 10px; color: #333;">
''Superconducting photon-counting detectors for ground-based astronomy — fabricating the cameras that image exoplanets.''
</div>



=== Mazin Laboratory ===

<table style="width: 100%; border-collapse: collapse;">
<tr>
<td style="vertical-align: top; padding-right: 15px; width: 70%;">
'''PI:''' [http://web.physics.ucsb.edu/~bmazin/index.html Prof. Benjamin Mazin] • [https://inspirehep.net/authors/1037976 INSPIRE-HEP Publications] • [http://web.physics.ucsb.edu/~bmazin/publications/ Lab Publication List]

Pioneers Microwave Kinetic Inductance Detectors (MKIDs) — superconducting photon-counting sensors with zero read noise that measure each photon's energy, arrival time, and position. Deploys MKID-based cameras (MEC, XKID) at major telescopes for direct imaging of exoplanets.

'''Selected Recent Publications:'''
* ''Characterization of Photon Arrival Timing Jitter in Microwave Kinetic Inductance Detector Arrays'' — '''Applied Physics Letters''' (2024). [https://doi.org/10.1063/5.0190172 DOI]
* ''Characterizing the Dark Count Rate of a Large-Format MKID Array'' — '''Optics Express''' 31(6), 10775 (2023). [https://doi.org/10.1364/OE.485003 DOI]
</td>
<td style="vertical-align: top; width: 30%;">
[[File:2026-04-24_research_Mazin_MKID_20K_Array_Package.jpg|thumb|300px|Optical/near-IR MKID array — the revolutionary photon-counting detector technology at the core of Mazin Lab research.]]
[[File:2026-04-24_research_Mazin_MKID_10K_Array_Zoom.png|thumb|300px|10,000-pixel MKID array in gold sample box with progressive zoom-ins showing pixel grid and individual lumped-element resonator structures.]]
</td>
</tr>
</table>





----

<div style="border: 1px solid #d9d9d9; border-radius: 6px; padding: 16px; margin-top: 20px; background: #fafafa;">
== Publication Archives ==

* [[PubList2018|'''2018 Publications''']]
* [[Older Publications|'''Earlier Publications''']]
* [[Template:Publications|Select Publications]] — ''A selection of publications that utilized the UCSB NanoFab''

== Research Presentations ==

* [[Photonics Presentations|Photonics]]
* [[Electronics Presentations|Electronics]]
* [[THz Physics Presentations|THz Physics]]

== Research Image Galleries ==

* [[Photonics Pictures|Photonics]] • [[Electronics Pictures|Electronics]] • [[MEMS Pictures|MEMS]] • [[Physics Pictures|Physics]] • [[Fluidics Pictures|Fluidics]]
</div>

[[Category:Research]]
[[Category:Publications]]
[[Category:Nanofabrication]]
__FORCETOC__

Packaging Recipes

2026-06-11T22:41:55Z

John d: /* Dual-Pass Dicing */ added Biljana as author

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:

1. Setup: Enter wafer thickness (for example:660um), and tape thickness (100um)

2. Cut:

* Index "0" - Set this to desired index (distance between two cuts), index "1" - set this to "0"
* Cut: Depth - Head1 "0"- set this to half way of actual thickness, for example: 0.300mm
* Cut: Depth - Head1 "1"- set this to cut the full thickness (wafer + cutting 20-30um into tape), for example: 0.070mm

3. Height: Check it after every cut

4. Example of dicing different materials:

a) Very thick Ga2O3 (660um), used double pass, blade 2.187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

5. Recipe example for Dual Dicing and Kerf for Ga2O3

<gallery>
File:Dicing Thick Ga2O3.jpg|Recipe example for Dicing Ga2O3
File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga2O3 (with photoresist on surface)
</gallery>
Author: [[Biljana Stamenic]], 2026-06

=== Partial Dicing ===
For partial-depth dicing, you need to do single-pass, dicing into substrate desired depth. Setting up the recipe:

1. Setup: Enter wafer thickness (example:750um), and tape (90um)

2. Cut: (if partial cut is only 100um- looking from top of the substrate)

* Index "0" - Set this to desired index (distance between two cuts, for example: 0.105mm), index "1" - set this to "0"
* Cut: Depth - Head1 "1"- Set Depth as following [(wafer thickness + tape thickness)- partial cut depth]=(750+90)-100=740um

3. Height: Check height after every 5 cuts

4. Example of partial cut:

a) Very thick Si (750um), used single pass, blade 2.187-2C-9RU-3, cutting speed=0.5mm/sec, spindle speed=30KRPM

5. Recipe example for Partial dicing into Si substrate
[[File:Partial dicing.jpeg|thumb|150x150px|none|Cut parameters for partial-depth cut]]
Author: [[Biljana Stamenic]], 2026-06

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Microscopes

2026-06-11T21:24:10Z

John d: /* Procedures & Tools */ more self-train notice

{{tool|{{PAGENAME}}
|picture=microscopes.jpg
|type = Inspection, Test and Characterization
|super= Demis D. John
|location=Bay 3, 6 & 7
|description = Optical Microscopes
|manufacturer = Nikon & Olympus
}}

==Procedures & Tools==
Most General-Use Microscopes do not require formal training - please see the pages below for specifics.

===[[UCSB NanoFab Microscope Training|'''Microscope Training Guide''']]===
This guide is for '''self-training''' on the specified general-use microscopes specified below.

This guide explains general usage info & the many advanced features available on most of our microscopes. New users are encouraged to read this, and optionally request in-person training by [[Demis D. John|Demis]].

Includes topics like:

*Basic usage
*Preventing a crash
*Bright-Field/Dark Field
*How to dis/enable DIC/Nomarskiimaging

<ins>'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes! Most of our scopes have motorized objective turrets, use the electronic buttons instead.</ins>

===Image Analysis Software===
Many of our microscopes have cameras and software for image capture. If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*[https://www.amscope.com/software-download AmScope Software] - free microscope image analysis software
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*[https://fiji.sc FIJI] - scientific image anaylsis software
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many [https://imagej.net/Category:Plugins other useful plugins], for particle counting, [https://stackoverflow.com/questions/6230353/how-to-create-gif-animation-from-a-stack-of-jpgs/37193012#37193012 creating animations] etc.

==General-Use Microscopes==
'''''Self-Train:''' The following microscopes are self-train to use.''

''Please study the [[UCSB NanoFab Microscope Training|'''Microscope Training Guide''']] for training.''

Contact the [[Demis D. John|supervisor]] if you would like a hands-on training or have questions.

===Microscope #2: Nikon Optiphot 200 (Bay 2)===

*Location: Dry Etch Bay 2
*Trinocular: Ocular Binoc. + Camera (Simultaneous)
*Objectives: 5x, 10x, 20x, 50x, 100x, 150x
*Filters: Green, ND
*Bright/Dark Field
*Differential Interference Contrast (DIC/Nomarski)
**DIC only available on 100x and 150x mags due to image quality reduction at low mags due to DIC prisms which were removed for low mags.
*Top Reflected Illumination (Episcopic)
*AMScope 14MP Cameras (Model MU1400B) with calibrated software for measurements. Free Software available for calibrated measurements. [[Microscopes#Image Analysis Software|See above]] for software & calibration file link.

===Microscope #3: Nikon Eclipse L200 (Bay 6)===

*Location: Lithography yellow area, Bay 6
*[https://wiki.nanotech.ucsb.edu/wiki/images/8/80/Nikon-Microscope-Manual.pdf Manual for Nikon Eclipse L200D]
*Trinocular: Binoc. + Camera (Mutually Exclusive)
*Objectives: 5x, 10x, 20x, 50x, 100x, 150x
*Filters: Green, ND
*Bright/Dark Field
*Differential Interference Contrast (DIC/Nomarski)
*Top Reflected Illumination (Episcopic)
*AMScope 14MP Cameras (Model MU1400B) with calibrated software for measurements. Free Software available for calibrated measurements. [[Microscopes#Image Analysis Software|See above]] for software & calibration file link.

===Microscope #4: Nikon Eclipse L200D (Bay 6)===

*Location: Lithography yellow area, Bay 6
*Trinocular: Binoc. + Camera (Mutually Exclusive)
*Objectives: 5x, 10x, 20x, 50x, 100x, 150x
*Filters: Green, ND
*Bright/Dark Field
*Differential Interference Contrast (DIC/Nomarski)
*Top Reflected (Episcopic) & Bottom Transmission (Diascopic) Illumination
*AMScope 14MP Cameras (Model MU1400B) with calibrated software for measurements. Free Software available for calibrated measurements. [[Microscopes#Image Analysis Software|See above]] for software & calibration file link.

===Microscope #5: [[Fluorescence Microscope (Olympus MX51)|Fluorescence Microscope: Olympus MX51 (Bay 6)]]===

*Location: Lithography yellow area, Bay 6
*See the wiki page for the [[Fluorescence Microscope (Olympus MX51)|Olympus MX51]] for full details
*Trinocular: Binoc. + Camera (Simultaneous)
*Native Olympus Stream Software:
**Photo/video capture
**Calibrated measurement (calibrations locked)
*Objectives: 5x, 10x, 20x, 50x, 100x, 150x
*Filters: Green, ND
*Bright/Dark Field
*Differential Interference Contrast (DIC/Nomarski)
*Top (Episcopic) & Bottom (Diascopic) Illumination
*Three Fluorescence Filters (requires training, see main tool page for specs.)

[[File:Microscope 01 Olympus BHMJL crop.png|alt=Photo of Microscope #01 in the Characterization lab, Room 1111|thumb|200x200px|Microscope #01]]

===Microscope #1: Olympus BHMJL (Room 1111)===

*Location: Back-End Lab, Room 1111
*Trinocular: Ocular Binoc. + Camera (Exclusive)
*LED Illuminator, Variable
*Objectives: ''10x, 20x, 50x, 100x''
*Bright/Dark Field
*Top Reflected (Episcopic) & Bottom Transmission (Diascopic) Illumination
*AMScope 14MP Cameras (Model MU1400B) with calibrated software for measurements. Free Software available for calibrated measurements. [[Microscopes#Image Analysis Software|See above]] for software & calibration file link.

===Microscope #8: AmScope Wide Field of View Stereoscope (Bay 4)===
[[File:Amscope Stereoscope Photo.jpg|alt=photo of the Amscope Sterescope microscope in bay 4|thumb|250x250px|Microscope #8: Amscope Stereoscope]]

*Location: Metrology, Bay 4
*Integrated camera for taking large field of view pictures.
*The field of view is about 25mm in '''Y''' and larger in '''X''' at the lowest magnification.
*Nanofiles Sync for file transfer: FTP folder name "''amscope''".
*AmScope software on the laptop to use the camera.
*On the side of the main scope there is a small lever that is used to divert the image from the right eyepiece to the camera for imaging, the left eyepiece remains open for viewing at all times.

==Microscopes Requiring Training==
''The following microscopes require training from the supervisor. Click on the appropriate tool page to see the supervisor info.''

===Microscope #6: [[Deep UV Optical Microscope (Olympus)|DUV Microscope: Olympus MX61A-DUV (Bay 4)]]===
Please see the main tool page for detailed info on this microscope: [[Deep UV Optical Microscope (Olympus)]]
YOU ARE REQUIRED TO GET TRAINED on this tool before you are allowed to use it! Please contact the Tool Owner to get training.

'''DUV Camera is non-operational and unable to be repaired. Visible camera is still functional. 2022-02'''

*Location: Metrology, Bay 4
*Motorized Stage + Objective Turret
*Trinocular: Binoc. + Camera (Simultaneous)
*Objectives: 5x, 10x, 20, 50x, 100x, DUV-100x
*Filters: ''to be added''
*Native Olympus MX61 Software control & Camera
**Calibrated measurements (calibrations locked)
**Z (focus) measurement via motorized stage height
*Deep-UV Light source + DUV Camera
**DUV-100x sub-micron imaging/measurement

===Microscope #7: [[Digital Microscope (Olympus DSX1000)|Olympus DSX1000 Digital Microscope (Bay 4)]]===
Please see the main tool page for detailed info on this microscope, click the link above.
YOU ARE REQUIRED TO GET TRAINED on this tool before you are allowed to use it! Please contact the Tool Supervisor to get training.

*Location: Metrology, Bay 4
*Motorized Stage + Optics
*Optical magnification via motorized optics, increases mag beyond objective’s value.
*Manual switch between 2 objectives.
*Digital Viewing via Computer
*Objectives: High-Res.: 5x, 50x // Long-Distance + Angled Viewing: 10x, 40x
*Imaging Modes:
**Bright Field
**Dark Field
**DIC/Nomarski
**Oblique Ilumination w/ variable illumination angle
**Polarized imaging w/ variable polarization
*Native Olympus Software control & Camera
**Calibrated measurements (calibrations locked)
**Z (focus) measurement via motorized stage height
**3D height Meas (for taller features)
**Rapidly capture multiple imaging modes
**Offline Analysis Software available for free
*Tilted Imaging capabilities, for deep (> few micron) features.

===[[Laser Scanning Confocal M-scope (Olympus LEXT)|Olympus LEXT Confocal Microscope (Bay 4)]]===
See the main tool page for complete info: [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
YOU ARE REQUIRED TO GET TRAINED on this tool before you are allowed to use it! Please contact the Tool Owner to get training.

*Location: Metrology, Bay 4
*Motorized stage + Objective Turret
*100mm wafer stage
*Native Olympus OLS2000 Software & Built-In Camera:
**Calibrated measurement (calibrations locked)
**Image stitching capabilities
*3D Laser-Scanning Confocal Microscopy capability:
**3D Topographical measurement (optical profilometry)
**Surface roughness estimations (large roughness)
**Thin-Film Film-Thickness Measurements (thicker films)

===[[Filmetrics F40-UV Microscope-Mounted|Filmetrics F40-UV / Olympus BHMJL (Bay 4)]]===

*Location: Metrology, Bay 4
*Very simple, manual microscope.
*Has spectroscopic reflectometer attached for thin-film measurements in small (<100µm) area.
*See the tool page for Training on the Filmetrics Thin-Film Measurement tool.

==Procedures & Documentation==

*[[UCSB NanoFab Microscope Training|'''Microscope Training''']] - General procedures and info for using our microscopes

*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/Nikon-Microscope-Manual.pdf Nikon Microscope Instruction Manual (Ecplise)]
*[//wiki.nanotech.ucsb.edu/wiki/images/2/28/Nikon-Microscope-OptiPhot-Manual.pdf Nikon Microscope Instruction Manual (Optiphot)]
*[https://www.amscope.com/software/AmScope/MU-Series-Complete-Manual-Complete.pdf AM Scope manual link].
*[https://www.amscope.com/software-download AM Scope Software link].

Microscopes

2026-06-11T21:22:56Z

John d: /* Procedures & Tools */ added self-train notice

{{tool|{{PAGENAME}}
|picture=microscopes.jpg
|type = Inspection, Test and Characterization
|super= Demis D. John
|location=Bay 3, 6 & 7
|description = Optical Microscopes
|manufacturer = Nikon & Olympus
}}

==Procedures & Tools==
Most General-Use Microscopes do not require formal training - please see the pages below for specifics.

===[[UCSB NanoFab Microscope Training|'''Microscope Training Guide''']]===
This guide explains general usage info & the many advanced features available on most of our microscopes. New users are encouraged to read this, and optionally request in-person training by [[Demis D. John|Demis]].

Includes topics like:

*Basic usage
*Preventing a crash
*Bright-Field/Dark Field
*How to dis/enable DIC/Nomarskiimaging

<ins>'''DO NOT TURN MICROSCOPE OBJECTIVES BY HAND''' for motorized microscopes! Most of our scopes have motorized objective turrets, use the electronic buttons instead.</ins>

===Image Analysis Software===
Many of our microscopes have cameras and software for image capture. If you know the ''microscope and objective'' used for acquiring a photo, you can make calibrated measurements on the photos at your own desktop using the following software:

*[https://www.amscope.com/software-download AmScope Software] - free microscope image analysis software
**[[Measurements and Imaging with Amscope Camera - Quickstart Usage Guide]]
**AmScope Calibration File containing calibrations for all NanoFab microscopes: [https://wiki.nanotech.ucsb.edu/wiki/Images/uploads/2020/AmScopeCalsAll.magn Download Here]
**Also available on '''''Nanofiles-SFTP / Manuals / Amscope'''''
*[https://fiji.sc FIJI] - scientific image anaylsis software
**[[FIJI - Microscope Measurement Tools|The Microscope Measurement Tools plugin]] has pre-configured calibrations for NanoFab microscopes & SEMs, and allows you to draw length measurements.
***''Calibrations in this plugin repository are out of date as of microscope upgrades in 2019''.
**There are many [https://imagej.net/Category:Plugins other useful plugins], for particle counting, [https://stackoverflow.com/questions/6230353/how-to-create-gif-animation-from-a-stack-of-jpgs/37193012#37193012 creating animations] etc.

==General-Use Microscopes==
'''''Self-Train:''' The following microscopes are self-train to use.''

''Please study the [[UCSB NanoFab Microscope Training|'''Microscope Training Guide''']] for training.''

Contact the [[Demis D. John|supervisor]] if you would like a hands-on training or have questions.

===Microscope #2: Nikon Optiphot 200 (Bay 2)===

*Location: Dry Etch Bay 2
*Trinocular: Ocular Binoc. + Camera (Simultaneous)
*Objectives: 5x, 10x, 20x, 50x, 100x, 150x
*Filters: Green, ND
*Bright/Dark Field
*Differential Interference Contrast (DIC/Nomarski)
**DIC only available on 100x and 150x mags due to image quality reduction at low mags due to DIC prisms which were removed for low mags.
*Top Reflected Illumination (Episcopic)
*AMScope 14MP Cameras (Model MU1400B) with calibrated software for measurements. Free Software available for calibrated measurements. [[Microscopes#Image Analysis Software|See above]] for software & calibration file link.

===Microscope #3: Nikon Eclipse L200 (Bay 6)===

*Location: Lithography yellow area, Bay 6
*[https://wiki.nanotech.ucsb.edu/wiki/images/8/80/Nikon-Microscope-Manual.pdf Manual for Nikon Eclipse L200D]
*Trinocular: Binoc. + Camera (Mutually Exclusive)
*Objectives: 5x, 10x, 20x, 50x, 100x, 150x
*Filters: Green, ND
*Bright/Dark Field
*Differential Interference Contrast (DIC/Nomarski)
*Top Reflected Illumination (Episcopic)
*AMScope 14MP Cameras (Model MU1400B) with calibrated software for measurements. Free Software available for calibrated measurements. [[Microscopes#Image Analysis Software|See above]] for software & calibration file link.

===Microscope #4: Nikon Eclipse L200D (Bay 6)===

*Location: Lithography yellow area, Bay 6
*Trinocular: Binoc. + Camera (Mutually Exclusive)
*Objectives: 5x, 10x, 20x, 50x, 100x, 150x
*Filters: Green, ND
*Bright/Dark Field
*Differential Interference Contrast (DIC/Nomarski)
*Top Reflected (Episcopic) & Bottom Transmission (Diascopic) Illumination
*AMScope 14MP Cameras (Model MU1400B) with calibrated software for measurements. Free Software available for calibrated measurements. [[Microscopes#Image Analysis Software|See above]] for software & calibration file link.

===Microscope #5: [[Fluorescence Microscope (Olympus MX51)|Fluorescence Microscope: Olympus MX51 (Bay 6)]]===

*Location: Lithography yellow area, Bay 6
*See the wiki page for the [[Fluorescence Microscope (Olympus MX51)|Olympus MX51]] for full details
*Trinocular: Binoc. + Camera (Simultaneous)
*Native Olympus Stream Software:
**Photo/video capture
**Calibrated measurement (calibrations locked)
*Objectives: 5x, 10x, 20x, 50x, 100x, 150x
*Filters: Green, ND
*Bright/Dark Field
*Differential Interference Contrast (DIC/Nomarski)
*Top (Episcopic) & Bottom (Diascopic) Illumination
*Three Fluorescence Filters (requires training, see main tool page for specs.)

[[File:Microscope 01 Olympus BHMJL crop.png|alt=Photo of Microscope #01 in the Characterization lab, Room 1111|thumb|200x200px|Microscope #01]]

===Microscope #1: Olympus BHMJL (Room 1111)===

*Location: Back-End Lab, Room 1111
*Trinocular: Ocular Binoc. + Camera (Exclusive)
*LED Illuminator, Variable
*Objectives: ''10x, 20x, 50x, 100x''
*Bright/Dark Field
*Top Reflected (Episcopic) & Bottom Transmission (Diascopic) Illumination
*AMScope 14MP Cameras (Model MU1400B) with calibrated software for measurements. Free Software available for calibrated measurements. [[Microscopes#Image Analysis Software|See above]] for software & calibration file link.

===Microscope #8: AmScope Wide Field of View Stereoscope (Bay 4)===
[[File:Amscope Stereoscope Photo.jpg|alt=photo of the Amscope Sterescope microscope in bay 4|thumb|250x250px|Microscope #8: Amscope Stereoscope]]

*Location: Metrology, Bay 4
*Integrated camera for taking large field of view pictures.
*The field of view is about 25mm in '''Y''' and larger in '''X''' at the lowest magnification.
*Nanofiles Sync for file transfer: FTP folder name "''amscope''".
*AMScope software on the laptop to use the camera.
*On the side of the main scope there is a small lever that is used to divert the image from the right eyepiece to the camera for imaging, the left eyepiece remains open for viewing at all times.

==Microscopes Requiring Training==
''The following microscopes require training from the supervisor. Click on the appropriate tool page to see the supervisor info.''

===Microscope #6: [[Deep UV Optical Microscope (Olympus)|DUV Microscope: Olympus MX61A-DUV (Bay 4)]]===
Please see the main tool page for detailed info on this microscope: [[Deep UV Optical Microscope (Olympus)]]
YOU ARE REQUIRED TO GET TRAINED on this tool before you are allowed to use it! Please contact the Tool Owner to get training.

'''DUV Camera is non-operational and unable to be repaired. Visible camera is still functional. 2022-02'''

*Location: Metrology, Bay 4
*Motorized Stage + Objective Turret
*Trinocular: Binoc. + Camera (Simultaneous)
*Objectives: 5x, 10x, 20, 50x, 100x, DUV-100x
*Filters: ''to be added''
*Native Olympus MX61 Software control & Camera
**Calibrated measurements (calibrations locked)
**Z (focus) measurement via motorized stage height
*Deep-UV Light source + DUV Camera
**DUV-100x sub-micron imaging/measurement

===Microscope #7: [[Digital Microscope (Olympus DSX1000)|Olympus DSX1000 Digital Microscope (Bay 4)]]===
Please see the main tool page for detailed info on this microscope, click the link above.
YOU ARE REQUIRED TO GET TRAINED on this tool before you are allowed to use it! Please contact the Tool Supervisor to get training.

*Location: Metrology, Bay 4
*Motorized Stage + Optics
*Optical magnification via motorized optics, increases mag beyond objective’s value.
*Manual switch between 2 objectives.
*Digital Viewing via Computer
*Objectives: High-Res.: 5x, 50x // Long-Distance + Angled Viewing: 10x, 40x
*Imaging Modes:
**Bright Field
**Dark Field
**DIC/Nomarski
**Oblique Ilumination w/ variable illumination angle
**Polarized imaging w/ variable polarization
*Native Olympus Software control & Camera
**Calibrated measurements (calibrations locked)
**Z (focus) measurement via motorized stage height
**3D height Meas (for taller features)
**Rapidly capture multiple imaging modes
**Offline Analysis Software available for free
*Tilted Imaging capabilities, for deep (> few micron) features.

===[[Laser Scanning Confocal M-scope (Olympus LEXT)|Olympus LEXT Confocal Microscope (Bay 4)]]===
See the main tool page for complete info: [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
YOU ARE REQUIRED TO GET TRAINED on this tool before you are allowed to use it! Please contact the Tool Owner to get training.

*Location: Metrology, Bay 4
*Motorized stage + Objective Turret
*100mm wafer stage
*Native Olympus OLS2000 Software & Built-In Camera:
**Calibrated measurement (calibrations locked)
**Image stitching capabilities
*3D Laser-Scanning Confocal Microscopy capability:
**3D Topographical measurement (optical profilometry)
**Surface roughness estimations (large roughness)
**Thin-Film Film-Thickness Measurements (thicker films)

===[[Filmetrics F40-UV Microscope-Mounted|Filmetrics F40-UV / Olympus BHMJL (Bay 4)]]===

*Location: Metrology, Bay 4
*Very simple, manual microscope.
*Has spectroscopic reflectometer attached for thin-film measurements in small (<100µm) area.
*See the tool page for Training on the Filmetrics Thin-Film Measurement tool.

==Procedures & Documentation==

*[[UCSB NanoFab Microscope Training|'''Microscope Training''']] - General procedures and info for using our microscopes

*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/Nikon-Microscope-Manual.pdf Nikon Microscope Instruction Manual (Ecplise)]
*[//wiki.nanotech.ucsb.edu/wiki/images/2/28/Nikon-Microscope-OptiPhot-Manual.pdf Nikon Microscope Instruction Manual (Optiphot)]
*[https://www.amscope.com/software/AmScope/MU-Series-Complete-Manual-Complete.pdf AM Scope manual link].
*[https://www.amscope.com/software-download AM Scope Software link].

Tutorials

2026-06-11T18:46:12Z

John d: /* Fabrication Tracking and Process Design */ link to travelers, DOEs etc.

The following are various tutorials from our NanoFab Wiki, collected here for your convenience.

__TOC__

== Fabrication Tracking and Process Design ==
Designing experiments, tracking your fabrication steps/process improvements, and keeping track of your results are key to achieving repeatable and improved results!

[[Processing - How Do I…?#Experiment%20Setup|<big>'''Processing: Experiment Setup'''</big>]]

See the above ↑ tutorial pages for examples of:

* [[Processing - How Do I…?#Travelers (aka. RunCards, Process Followers, Work Instructions)|Process Travelers/RunCards/Followers]] - ''Write your process and track what you actually did during the fab''
* [[Processing - How Do I…?#Design of Experiments (DOE)|Design of Experiments]] - ''Develop/optimize a fab step''
* [[Processing - How Do I…?#Tracking your processes|Manufacturing Execution Systems]] - ''Track all your designs, fab runs and experiment results, so you can iterate.''

{| class="wikitable"
|+Examples of Trello + Google Drive for tracking fabrication jobs
|[[File:Trello - Example Job Cards.png|alt=Trello - Example Job Cards screenshot|none|thumb|367x367px|Tracking to-do and completed tasks.]][[File:Google Drive - Example Job Folder.png|alt=Google Drive - Example Job Folder screenshot|none|thumb|327x327px|Example Job Folder on Google Drive with in-process traveler, microscope/SEM images, testing results etc.]]
|[[File:Trello - example job card.png|alt=Trello - example job card screenshot|none|thumb|504x504px|Example job card for a fabrication run.]]
|}

== CAD/Drawing Mask Plates ==
:Here are pages to help you design your devices in drawing programs, and make photomasks (aka. "masks" or "reticles") for various systems in our lab.[[File:CAD Tutorial for ASML Reticle v1 - screenshot Device Layout cell.png|alt=screenshot of KLayout view of Device_Layout|thumb|300x300px|KLayout: example CAD file.]]
Microfabrication CAD drawings are simple 2D drawings with layers, even though they are intended to become 3D devices through the fabrication process. The fabrication is all top-down, hence only 2D patterning is used.

* [[Calculators + Utilities#CAD%20Layout%20and%20Mask%20Design|Calculators + Utilities > CAD Layout and Mask Design]] - links to drawing programs and tutorials
* [[Calculators + Utilities#CAD%20Design%20Tips|Calculators + Utilities > CAD Design Tips]] - key concepts you should utilize in your drawings, and tips for setting up your CAD programs
* [[Calculators + Utilities#Example%20CAD%20File|Calculators + Utilities > Example CAD File]] - example stepper mask CAD files, including advanced layout for multiple experiments.
* [[Calculators + Utilities#CAD%20Files%20%26%20Templates|Calculators + Utilities > CAD Files & Templates]] - example GDS/OAS files for various useful structures (alignment marks, verniers, fonts etc)

== Mask Making Guidelines ==
''Info for mask/CAD layout for specific tools.''

==== General ====
* [[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.
* See [[Tutorials#CAD/Drawing Mask Plates|CAD tutorials above]] for layout tips and examples.
* [[Tutorial - How Photomasks are Made]] - this will help you submit your mask orders and clear up common misconceptions.

==== Stepper Mask Tutorials ====
[[File:Stepper Reticle Tutorial - Reticle Masking Schematic.png|alt=Schematic of stepper blocking off adjacent Images on reticle and exposure onto different wafer locations.|thumb|'''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Click for Stepper Reticle Tutorial]''' Stepper Reticle Patterns (“images”) can optionally be much more sophisticated and flexible than contact plates.|link=https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]]

* '''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Stepper Reticle Layout vs Wafer Layout (Demis D. John)]''' ''-'' explains how Stepper mask layout is very different than other litho systems.
* '''[[Stepper Reticle Layout (Advanced) - Complex Experiments and Variations]]''' - If you need many design variations on your wafer.

==== Steppers ====
* [[Stepper Mask-Making Guidelines (Generic)|Stepper Mask-Making Guidelines]] - Info needed to design and order a reticle for our Stepper systems.
* [https://docs.google.com/document/d/1b9YT11RPsl-UlLvN74hrQvG01OcYDL16r6I5lPOlBEo/edit?usp=sharing ASML-specific Mask Making Guidelines (Private)] - More detailed info to design and order a reticle for this specific ASML system.
** ''Access is restricted to trained users only by ASML's requirement - please contact [[Demis D. John|tool supervisor]] for access.''

* [[Autostep 200 Mask Making Guidance]] - information on designing and ordering your photomasks for the GCA AutoStep 200.
* [[GCA 6300 Mask Making Guidance]] (''Work in progress'') - GCA 6300 Stepper

==== Contact Aligners ====
* [[Mask Making Guidelines for Contact Aligners|Mask Making Guidelines - Contact Masks]] - for the MJB-3 & MA6 Contact Aligners

==== Direct-Write ====
* [[MLA150 - Design Guidelines]] - for the Heidelberg MLA150 Direct-Writer

== Lithography Tutorials ==
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Lithography Calibration - Analyzing a Focus-Exposure Matrix (FEM)]] - Projection litho systems (steppers, direct-writers) usually require a lithography calibration, using a Focus-Exposure Matrix/Array (FEM/FEA).
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}} - How it works, process limits and considerations for designing your process.

== General Fabrication ==

* [[Processing - How Do I…?]] ← This page attempts to list common solutions to fabrication issues our lab users often run into.

Tutorials

2026-06-11T18:42:25Z

John d: /* Fabrication Tracking and Process Design */

The following are various tutorials from our NanoFab Wiki, collected here for your convenience.

__TOC__

== Fabrication Tracking and Process Design ==
Designing experiments, tracking your fabrication steps/process improvements, and keeping track of your results are key to achieving repeatable and improved results!

[[Processing - How Do I…?#Experiment%20Setup|<big>'''Processing: Experiment Setup'''</big>]]

See the above ↑ tutorial for examples of:

* Travelers
* Design of Experiments
* Manufacturing Execution Systems

{| class="wikitable"
|+Examples of Trello + Google Drive for tracking fabrication jobs
|[[File:Trello - Example Job Cards.png|alt=Trello - Example Job Cards screenshot|none|thumb|367x367px|Tracking to-do and completed tasks.]][[File:Google Drive - Example Job Folder.png|alt=Google Drive - Example Job Folder screenshot|none|thumb|327x327px|Example Job Folder on Google Drive with in-process traveler, microscope/SEM images, testing results etc.]]
|[[File:Trello - example job card.png|alt=Trello - example job card screenshot|none|thumb|504x504px|Example job card for a fabrication run.]]
|}

== CAD/Drawing Mask Plates ==
:Here are pages to help you design your devices in drawing programs, and make photomasks (aka. "masks" or "reticles") for various systems in our lab.[[File:CAD Tutorial for ASML Reticle v1 - screenshot Device Layout cell.png|alt=screenshot of KLayout view of Device_Layout|thumb|300x300px|KLayout: example CAD file.]]
Microfabrication CAD drawings are simple 2D drawings with layers, even though they are intended to become 3D devices through the fabrication process. The fabrication is all top-down, hence only 2D patterning is used.

* [[Calculators + Utilities#CAD%20Layout%20and%20Mask%20Design|Calculators + Utilities > CAD Layout and Mask Design]] - links to drawing programs and tutorials
* [[Calculators + Utilities#CAD%20Design%20Tips|Calculators + Utilities > CAD Design Tips]] - key concepts you should utilize in your drawings, and tips for setting up your CAD programs
* [[Calculators + Utilities#Example%20CAD%20File|Calculators + Utilities > Example CAD File]] - example stepper mask CAD files, including advanced layout for multiple experiments.
* [[Calculators + Utilities#CAD%20Files%20%26%20Templates|Calculators + Utilities > CAD Files & Templates]] - example GDS/OAS files for various useful structures (alignment marks, verniers, fonts etc)

== Mask Making Guidelines ==
''Info for mask/CAD layout for specific tools.''

==== General ====
* [[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.
* See [[Tutorials#CAD/Drawing Mask Plates|CAD tutorials above]] for layout tips and examples.
* [[Tutorial - How Photomasks are Made]] - this will help you submit your mask orders and clear up common misconceptions.

==== Stepper Mask Tutorials ====
[[File:Stepper Reticle Tutorial - Reticle Masking Schematic.png|alt=Schematic of stepper blocking off adjacent Images on reticle and exposure onto different wafer locations.|thumb|'''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Click for Stepper Reticle Tutorial]''' Stepper Reticle Patterns (“images”) can optionally be much more sophisticated and flexible than contact plates.|link=https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]]

* '''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Stepper Reticle Layout vs Wafer Layout (Demis D. John)]''' ''-'' explains how Stepper mask layout is very different than other litho systems.
* '''[[Stepper Reticle Layout (Advanced) - Complex Experiments and Variations]]''' - If you need many design variations on your wafer.

==== Steppers ====
* [[Stepper Mask-Making Guidelines (Generic)|Stepper Mask-Making Guidelines]] - Info needed to design and order a reticle for our Stepper systems.
* [https://docs.google.com/document/d/1b9YT11RPsl-UlLvN74hrQvG01OcYDL16r6I5lPOlBEo/edit?usp=sharing ASML-specific Mask Making Guidelines (Private)] - More detailed info to design and order a reticle for this specific ASML system.
** ''Access is restricted to trained users only by ASML's requirement - please contact [[Demis D. John|tool supervisor]] for access.''

* [[Autostep 200 Mask Making Guidance]] - information on designing and ordering your photomasks for the GCA AutoStep 200.
* [[GCA 6300 Mask Making Guidance]] (''Work in progress'') - GCA 6300 Stepper

==== Contact Aligners ====
* [[Mask Making Guidelines for Contact Aligners|Mask Making Guidelines - Contact Masks]] - for the MJB-3 & MA6 Contact Aligners

==== Direct-Write ====
* [[MLA150 - Design Guidelines]] - for the Heidelberg MLA150 Direct-Writer

== Lithography Tutorials ==
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Lithography Calibration - Analyzing a Focus-Exposure Matrix (FEM)]] - Projection litho systems (steppers, direct-writers) usually require a lithography calibration, using a Focus-Exposure Matrix/Array (FEM/FEA).
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}} - How it works, process limits and considerations for designing your process.

== General Fabrication ==

* [[Processing - How Do I…?]] ← This page attempts to list common solutions to fabrication issues our lab users often run into.

Packaging Recipes

2026-06-10T18:09:22Z

John d:

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing|Dual-Pass Dicing]] process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pasxs, then cut the full wafer thickness on the second pass.

Example: 650um Sapphire, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

Example: 660um Ga2O3, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~225um

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Packaging Recipes

2026-06-10T18:08:53Z

John d: /* Recommended Dicing Parameters */ added dual pass dicing.

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|Ga2O3**
|2.187-8C-54RU-3
|18
|0.5
|9
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire**
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glass
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

<nowiki>**</nowiki> Refer to Dual-Pass Dicing process below.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

=== Dual-Pass Dicing ===
For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pasxs, then cut the full wafer thickness on the second pass.

Example: 650um Sapphire, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

Example: 660um Ga2O3, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~225um

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

RIE 2 (MRC)

2026-06-05T03:07:04Z

John d: added link to recipes

{{tool2|{{PAGENAME}}
|picture=RIE2.jpg
|type = Dry Etch
|super= Lee Sawyer
|super2= Aidan Hopkins
|phone= 805-893-2123
|location=Bay 2
|email=lee_sawyer@ucsb.edu
|description = RIE #2 Methane/Hydrogen-Based System
|manufacturer = Materials Research Corporation (MRC)
|materials =
|toolid=25
}}
==About==

This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH4/H2/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides.

RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O2). Alternatively, one can perform cyclic etching between MHA and O2 to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber.

==Detailed Specifications==

*Etch gases include: CH4, H2, Ar and O2
*Low 1 E -6 ultimate chamber pressure
*13.56 Mhz excitation frequency
*Sample size limited to approximately 2 inches
*HeNe and IR laser monitoring for endpoint
*Automatic tuning network
*DC Bias or RF power control
*Masking materials include: Ni, SiON, photoresist (limited to low bias/power)
*Typical etch conditions for InGaAsP:
**75 mT (CH4/H2/Ar : 4/20/10 sccm)
**450v bias
**~ 45 nm/min. etch rate

==Documentation==

*[https://wiki.nanofab.ucsb.edu/w/images/8/84/RIE_2_SOP_Rev_D.pdf RIE #2 Standard Operating Procedure]

== Recipes ==
[[RIE Etching Recipes#RIE 2 .28MRC.29|'''RIE#2 Recipes''']] - lists staff-qualified recipes and results/variations. Contact tool supervisor if you want to try etching unlisted materials.

Lab Rules

2026-06-04T22:27:54Z

John d: /* Procedure for the Use and Handling of Precious Metals */

__NUMBEREDHEADINGS__

'''UCSB Nanofabrication Facility Policy, Guidelines and Chemical Hygiene Plan'''

''Use the '''''Table of Contents''''' below, or your browser's '''''Find''''' function to find a particular policy, or consult the '''''[[Frequently Asked Questions]]''''' which also links to common topics.''

''Save/print this document with your web browser's '''Print > Save as PDF''' function.''

==Summary==
While working in the Nanofab, you are surrounded by hazardous chemicals and gases, high voltages, radiation, and mechanical systems. It is impossible to define a policy for every conceivable situation.

'''The responsibility lies with users and staff to act in a professional, courteous, and safe manner at all times while in the facility.''' The Nanofab culture relies on self-discipline to follow policies, respect for each other, and careful considerate treatment of facility property that is needed for project success. Everyone’s work is equally important and the basic rule of treating others how you would like to be treated sets the framework for many policies in the facility. As a group we expect all users and staff to help maintain the safety and integrity of the Nanofab.

The Nanofab is not a teaching lab or a course in processing. The users are expected to have prior cleanroom experience and understand any chemistry or process used. All users should employ common sense and a high degree of prudence while working in this facility. Users violating the operating and safety rules of the facility or endangering the safety of themselves or other users may be denied further access to the facility.

This document attempts to define acceptable actions and behavior for the users of the Nanofabrication facility and contains extensive safety related information on common hazards and work practices and procedures within the facility.

__TOC__

=='''General Nanofab Information'''==

===Nanofab Prerequisite===
New Nanofab student users should have taken one of the UCSB process courses listed below before they can gain access to the lab or have demonstrated cleanroom experience. Cleanroom experience can be either work experience, or laboratory experience associated with a thin film process. '''It is the responsibility of all external users to have the proper training, both in general lab safety and the appropriate lab experience provided from their own institution.''' Experience exceptions are at the exclusive discretion of the operational director of the facility.

*EE220A (also known as MATRL215A)
*EE 220C (also known as MATRL215C)
*ME 141B
*ME 292
*EE 120A

===UCSB Laboratory Hazardous Assessment Tool (LHAT)===
Since there are multiple users of the facility, with their own unique projects, the management of the facility cannot be responsible for overseeing all aspects of their work. Therefore, the supervisors of individuals using the facility, e.g., UCSB '''Principal Investigators (PIs) and external user PIs or managers are ultimately responsible for ensuring that their supervisees have the appropriate knowledge and training to work safely in the facility.''' They are also responsible for ensuring that all applicable regulatory requirements are met. This includes having a compliant "'''Chemical Hygiene Plan" per OSHA regulations'''. The information in this document and on the [https://www.nanotech.ucsb.edu/wiki UCSB Nanofab wiki site], https://www.nanotech.ucsb.edu/wiki, should be considered as providing "general supporting information" to the Chemical Hygiene Plan of a particular supervisor. Supervisors can reference all or some of this information within their Plans, but this document does not constitute a complete plan. UCSB EH&S can provide assistance to supervisors in preparing their Plans.

===Laboratory Orientation and Initial Training===
All new users must take the initial fundamentals of laboratory safety course offered through the UC learning center. Additionally, there is a mandatory general orientation and in-lab wet bench training that is required. Contact the facility operational director to request access.

While in the laboratory, all personnel will wear facility provided bunny-suits, gloves, and Z87+ rated safety glasses at all times, unless noted by a specific policy exception.

===Chemical Bench Use Authorization===
There is a mandatory wet bench training that every user needs to attend before accessing any of the chemistry or wet benches, including simple rinsing with water. Please contact the operations manager for training.

===Lab Storage of User-Specific Materials ===

====Rules and allocation====
[[File:Lab Rules - 1.4.1 shelf space.png|thumb|170x170px]]
All Nanofab storage shelf space and the blue containers are controlled by the Nanofab. It is not open use. Please contact Bill Millerski (wmillerski@ucsb.edu) for new or additional shelf space. It is assigned by group or company. There is a finite shelf space so please first check within your own group to make sure shelf space is optimized and old users’ boxes have been removed or re-assigned before contacting Bill. Extra blue bins, lids and dividers are stored in the gowning room for use. '''Please do not use any other boxes on the shelves except for the blue bins provided by the Nanofab. If boxes are left out or stored on the wrong shelves they will be removed from the lab. Additionally, the Nanofab is not a long term storage facility and users should regularly review what they and their groups are storing in the lab so that items no longer needed can be removed to make room for others that may need the space.'''

A user’s job in the facility is not complete until all user-specific materials have been cleaned up and put away. All users are given space to store user-specific materials within the facility in a neat, organized fashion. In order to have space for everyone to work, all users must clean up their personal items and store them before leaving the lab for any time longer than a 30-minute break. Storage boxes found without the user being in the lab will be removed from the lab and stored in a secure location. The group/user name will be placed on a list in the facility that users can check to determine if their box has been taken by staff. The current location for this list is on the cabinet in service chase 4. Users will need to contact a staff member to retrieve boxes. There will be a charged fee of 30 minutes of staff time for each incident and this will be noted on the invoice. For continued violations there will be an escalation of consequences:

1st offense: fee

2nd offense within 12 months: fee

3rd time offense within 12 months: fee and warning of impending suspension

4th time offense within 12 months: fee, 2 day suspension, and supervisor notification

5th time offense within 12 months: fee, minimum 3 days suspension, and personal discussion with user and supervisor.

====Dry-Box/Dessicator====
[[File:Lab Rules - 1.4.2 dry box.png|thumb|153x153px]]
There is a large desiccator located in the main corridor close to Bays 6-7 along the wall. Users can store any sensitive materials in the desiccator. '''It will need to have the group identification, user contact info and date on each container'''. Each user/group must clean out old or unused material. Occasionally the staff will announce and clean out the cabinet of outdated materials. This unit is NOT for long term storage of materials, but for materials being actively processed in the facility.

====ASML Mask Storage====
[[File:Lab Rules - 1.4.3 ASML masks.png|thumb|161x161px]]
There is also shelf space for ASML mask plates behind the ASML Stepper. '''Only ASML masks can be stored on that shelf'''. All other photo-masks need to be stored in your blue containers or removed from the lab when not in use. You will be allowed to use the ASML shelf after official training on the ASML stepper. The shelf space is controlled by Demis D. John, [[Demis D. John|demis@ece.ucsb.edu]]. The Nanofab is not a long term storage facility. When a mask set will no longer be used, the users are responsible for removing these masks from the facility and storing them at another location. If items need to be kept clean, users should bag them in sealable bags before taking them out of the cleanroom.

===Lab Suspensions===
The lab has been operating for many years. Over this time it has been determined that there exist some fundamental rules and procedures that must be maintained to provide both a safe and productive environment. While it does not happen often and we do not want to prevent users from completing their work we have found that suspensions from the lab are sometimes necessary and must be taken seriously. The lab relies on an honor system as staff can’t be there at all times to maintain compliance. While working in the lab, we rely on users to follow all written and oral procedures (even if inconvenient) and to treat others with respect, honoring both the person and their work as you would your own. The lab has a large user base of more than 600 active users annually. Most infractions have warnings first and this is most often all that is needed. The goal of suspensions is to change behavior to conform to the rules and policies set forth in this document. Suspension durations will escalate until behaviors are changed to conform to the facility rules. Continued refusal to follow the facility policies and guidelines may result in eventual expulsion from facility use. PPE and other human safety violations at the wet benches should be expected to result in an immediate suspension. The duration of any suspension and any further escalation will be determined by the laboratory management after consideration of the events. At the exclusive discretion of the operational director, in addition to or in lieu of suspension, we may require a re-reading of this policy and the taking of a refresher quiz for violations. '''We will contact your PI or supervisor to acknowledge any suspension'''. Please be aware of this policy. If you are found in non-compliance with any policy it is your fault alone and no one else’s. You should handle this in the appropriate manner and correct your own behavior.

===Iris Camera and Card Access System===
[[File:Lab Rules - 1.6 iris scanner.png|thumb|97x97px]]
The Iris Camera and Card Access System provides security to the Nanofab, and allows tracking of the time each user spends in the Nanofab. '''Always scan in when entering the lab and scan out when exiting the lab, even when attending training sessions or performing beneficial work.''' The only exception to this rule is entering as a visitor as defined in the visitor policy below. '''Willful Violation this policy will result in suspension.''' This policy is both for safety (knowing who is in the lab in case of emergencies) and for fair, accurate billing of facility resources.

====After Hours Access====
The building is open from 7am to 6pm M-F, excluding holidays. During all other hours, the building is electronically locked. After hour access can be gained by using the iris reader or WHITE card reader on the south entrance (mountains are north, not the main entrance)

===Visitor Policy ===

====Badges====
Visitor badges can be obtained from the staff during the normal weekday hours and removes any confusion about the shadowing of another user without logging in. As a nonpaying person, a visitor can’t touch any equipment, computers or chemicals in the lab. We offer this policy as a courtesy so please do not abuse it as it can also be removed. The visitor badge must be worn outside the bunnysuit and be clearly visible at all times.

====Shadowing====
We encourage new users to shadow current users as a visitor to become familiar with the Nanofab before beginning actual work. To accomplish this, registered users may come in as visitors, with a badge, in order to watch and learn how processes are done. A logged-in user and visitor may not exchange roles while in the cleanroom together. Only the actively logged-in user may operate/touch/use any equipment in the laboratory. No exceptions.

====Visiting Researchers====
Professional, non-registered visitors such as research collaborators or new students in a research group can be brought into the lab to observe with the permission of laboratory staff during normal operating hours (8am-5pm M-F). Off-hours permission to bring in professional visitors will be evaluated on request by the operational director or co-manager.

====Non-professional visitors====
Non-professional visitors such as family members and friends can be brought into the lab during normal hours (8am-5pm M-F) only with permission of the operational director or co-manager. In general, these types of visits can be most effectively done looking through the windows of the long South hallway.

====Visitor Rules====
Any official user can bring in a visitor in to the Nanofab under the guidelines given above to observe the lab operation. The official user is wholly accountable for the visitor’s safety, correct gowning and adherence to the visitor policy. Please do not take this privilege lightly as we don’t want anyone to be injured while in the lab as a visitor.

====Groups====
Any “group” tour (3 or more people) inside the facility needs prior approval of the operational director or co-manager. Please give ample time when requesting.

====Violations====
The Nanofab relies on the honor system and the visitor “observation only” policy is clear. '''If users are caught violating the visitor policy and operating/handling anything in the lab while being a visitor both the official user host and the visitor will be suspended from the lab without exception.'''

===Credit for Beneficial Work in the Nanofab===

====Rules for Credit====
[[File:Lab Rules - 1.8.1 beneficial time sheet.png|thumb]]
You can receive a time credit for each hour of beneficial time given to the facility. The time you are in the lab for the beneficial time is subtracted from the invoice and an additional benefit of 0.5 hours for each hour is given as a credit. Beneficial time includes:

#performing maintenance on lab equipment,
#conducting training sessions for other groups (not for your own research group), or
#any time spent performing work beneficial to the general operation of the lab.

Please indicate time spent performing beneficial work on the sign-up sheet just inside the gowning room, with a description of what you did/who you worked with. The lab director will ultimately determine if the credit is given.

====Determining Nanofab beneficial lab time credit====
The two common ways for logging beneficial time:

#If you help staff with Nanofab related work such as maintenance, construction or cleanup of equipment or the lab.
#If you happen to help/train someone outside of your group, unplanned, while you are logged in to the Nanofab. Please review the below paragraphs to understand other situations.

====Training within your group====
When you are training a group member or any other user, the correct way to enter the Nanofab is to log in and then take the user in as a visitor with a Visitor Badge. We assume that you are training while you are performing your own work and the other user is only observing. Only one user can be using the equipment and that user should be charged for their use.

*'''This should not be logged as beneficial time as the visitor is not charged.'''

The other method would be for the new user that is being trained to log in and you will go in as the visitor. This will allow the new user to handle and operate systems while you observe his use as the visitor and give verbal guidance.

*'''This should not be logged as beneficial time as the visitor is not charged.'''

===User Responsibilities regarding Housekeeping===

====Work Surfaces====
Leave all workspaces (wet benches, table tops, and system work surfaces, etc.) '''clean''', '''dry, and organized'''. This includes cleaning up all spills and residues, storing glassware and chemicals, throwing away used wipes and Aluminum dishes, etc.

If a workspace is not clean when you start a task, you still have the responsibility to leave it clean.

'''If you leave any workspace in disarray, or leave an unlabeled container on any workspace, you can be suspended from the Nanofab.''' Please kindly remind other users to clean up after themselves if you see them leaving a mess and to label their containers when needed.

====Wet Benches====
For wet benches in particular: Do not cover the exhaust holes on the bench tops with wipes or foil, as this will impede the laminar flow of air through the bench and possibly expose you or other Nanofab users to toxic fumes. Glassware may be left to dry on the racks or, for large containers, at the back of the bench only while you are working in the lab. When you leave the lab, you are responsible for drying and putting away all of your glassware. A user’s job in the facility is not complete until all user-specific materials have been cleaned up and put away.

=====Glassware Confiscation Policy=====
Glassware left out to dry after you leave the lab for the day may be confiscated and put into a secure location for a time, before being disposed of. The group/user name will be placed on a list in the facility that users can check to determine if their materials have been taken by staff. The current location for this list is on the cabinet in service chase 4, and all Staff have key-access to this cabinet.

Make sure your glassware/wafer holders have a group name written on them. Items with no user or group name are subject to disposal. If you ask staff to retrieve your glassware and it is found, your PI/advisor/supervisor will be charged a fee of 30 minutes of staff time and this will be noted on the invoice. For continued violations there will be an escalation of consequences:

1st offense: fee

2nd offense within 12 months: fee

3rd time offense within 12 months: fee and warning of impending suspension

4th time offense within 12 months: fee, 2 day suspension, and supervisor notification

5th time offense within 12 months: fee, minimum 3 days suspension, and personal discussion with user and supervisor.

====Sharps Disposal====
[[File:Lab Rules - 1.9.3 glass sharps waste.png|thumb|104x104px]]
The sharps bins located around the lab should be used for any material, supplies, broken beakers, syringe tips, etc. that would penetrate through trash bags and possibly injure one of the custodians while they empty the waste. If glass is broken in the cleanroom, please notify staff via nanofab@ece.ucsb.edu so that we can assist in cleaning this up in a timely manner.

===Nanofab Paper and Cardboard===
[[File:Lab Rules - 1.10.1 supplies racks NanoFab paper.png|thumb|133x133px]]
The only paper allowed in the lab is cleanroom type paper. We provide/stock cleanroom paper, cleanroom notebooks and binders in the gowning room. You can laminate regular paper for use in the lab. Use pens, not pencils, for writing in the lab. No cardboard is allowed in the nanofab.

===NanoFab Wipes & Napkins===
We stock four types of wipes in the lab:

====S/Pec-Wipe 3====
This is a cellulose/polyester blend with high absorption but medium particle and fiber generation.

====Berkshire Poly1200====
This is a 100% knit polyethylene wipe with low particulate generation, but also with relatively low absorption. (This kind of wipe is expensive and only available upon special request)

====PRO-STAT====
This is a cellulose blend presaturated with isopropyl alcohol and DI water.

====BIOHAZ====
These are used to line photoresist spinner catch bowls.

====Rules for Napkins and WIpes====

#Use wipes sparingly. They should not be treated like paper towels. Take the few extra moments to '''only grab the number you really need'''. This reduces a lot of unnecessary waste & cost.
#Do not place wipes on the sink trays or sink bottoms.
#Dispose of used wipes in the proper manner. Wipes that have Photoresist or solvents on them should never be thrown in the trash, but should be placed in the proper waste bins located in the backs of the exhausted benches.

==='''Preparing Equipment for Entry into the Nanofab'''===
All equipment entering the lab must be clean. The procedure for cleaning equipment for entry is:

====Large Equipment====

#Vacuum while equipment is outside the lab.
#Wipe down all accessible surfaces with propanol using Nanofab wipes or presaturated propanol wipes while equipment is outside the lab.
#Move equipment into the lab
#Vacuum with HEPA filtered vacuum cleaner when inside the lab.

====Small Equipment====

#Blue boxes, laptops, cell phones, tablets, etc. can be wiped down with the presaturated alcohol/DI water wipes in the gowning room before entering, if dirty.

===Maintenance Ways===

#You may enter maintenance ways ("Chases") without wearing a bunnysuit from outside the Nanofab, or while wearing a bunnysuit from inside the Nanofab.
#In general, there are no user-serviceable facilities in the maintenance ways. Unless instructed otherwise by NanoFab staff, no user shall adjust or address anything in the service ways, including all regulators, gas bottles, valves, electrical power systems, exhaust dampers, backing pumps, chillers, etc. Staff should be called in the case of issues in the service chases.[[File:Lab Rules - 1.13.1 maintenance chase doors.png|thumb|187x187px]]

===Notes on Particle Counts in the Nanofab===

#The Nanofab has historically been surveyed with a particle counter, with generally good results. All laminar flow, wet bench work surfaces have extremely low particle counts, better than class 10. The open areas in the lithography area are all better than class 100, and mostly better than class 10. The remainder of the Nanofab tests better than class 1000, and often better than class 100. The Nanofab design specifications stipulated class 100 for litho, class 1000 for everything else. The Nanofab is easily meeting these specs.
#The effectiveness of facemasks was investigated by placing the particle counter directly under a person’s neck while the person moved his head back and forth. Facemasks reduced particle counts, from the equivalent of class 500 without masks to class 100 with masks. Again, this was sampling just below the neck, not at typical substrate surfaces. If you need to inspect your parts very close to your face for any reason, you should consider using a face mask. There are two types of facemasks provided in the gowning room. Please choose the appropriate mask for your requirements.
#The choice of wipes used in the Nanofab has a more pronounced effect on particle counts. In general, wipes trade absorbency for low particle generation. The Spec-Wipe 3 is the stocked polyester/cellulose blend, high absorbency wipe designed for use in class 100 cleanrooms. Dragging the sampling tube across the surface of a Spec-Wipe 3 resulted in a class 1000 level particle counts. The Berkshire Polx 1200 wipe is the stocked low particle count, 100% knit polyester wipe. This wipe is far less absorbent than the Spec-Wipe 3, but generates fewer particles. Dragging the sampling tube across the surface of a Berkshire Polx 1200 wipe resulted in lower than class 100 level particle counts. The main point to note is that abrasion of fabric surfaces results in higher particle counts. When processing, try not to scrape the wipes while handling your parts.[[File:Lab Rules - 1.14.2 face masks.png|thumb|129x129px]]

===Procedure for the Use and Handling of Precious Metals===

#All precious metals (as well as other materials paid for by the Nanofab) are the property of the Nanofab. They are not to be used for any other purpose than for use within Nanofab systems. The materials must remain in the Nanofab at all times.
#Gold, platinum, palladium, and various alloys of these metals are stocked by the UCSB Nanofab and are provided for in the hourly recharge fee. Each research group can be issued a precious metal supply. You should check with your group first before contacting the Nanofab. Please contact the Nanofab Director for precious metals, thibeault@ece.ucsb.edu.[[File:Lab Rules - 1.15.2 metals lock box.png|thumb|121x121px]]
#This supply must be stored in a small lockable container, along with a log sheet for recording the use of these metals. Precious metals, the lockable security container, and log sheets will be issued by the Nanofab manager. All use of precious metals must be accurately recorded on the log sheet, and include user name, date, metal type, metal weight before use, and metal weight after use. '''Any discrepancies, such as over use or loss of the precious metals will be invoiced to the responsible group/company. Loss of a precious metal lock box will be reported to the local UCSB police and will elevate the issue as this is may constitute theft.''' Please make sure you are careful with your metal supply as you would be with your own money. [[File:Lab Rules - 1.15.4 metals weighing scale.png|thumb|151x151px]]
#Every group is responsible for keeping their supply of precious metals up to date and full. But since all users are sharing the same lab supply of provided metals it is fine to share metals between groups if there are extenuating circumstances that prevented a group from having sufficient precious metal supply. It must be correctly noted in the other group’s log sheets that metal was used.
#Multiple digital scales have been acquired and placed throughout the Nanofab to facilitate weighing of these metals. When requesting additional precious metals, the completed log sheet must be presented to the Nanofab manager. Any discrepancies or loss in recorded precious metal use will result in charges to the principle investigator/company corresponding to the value of the precious metal missing.
#Any loose precious metal lock boxes left out or any loose unmarked precious metals found in the lab either in a plastic bags, tins or individually laying on the floor should be returned to the lab manager for reclaim.

==== Procedure to request more metals ====
# email [mailto:nanofab-metal-refill@ece.ucsb.edu nanofab-metal-refill@ece.ucsb.edu], with the following info:
# Your group name (labelled on your lockbox)
# What metals you need refilled
# The code to your lockbox
# And leave the lockbox in the labeled blue bin located on the wire rack in the gowning room entryway.
# You will be notified by email when the metal has been replenished and your box has been returned to the blue bin.

===Surveillance Cameras===
[[File:Lab Rules - 1.16 surveillance camera.png|thumb]]
Human and equipment safety is very important in the Nanofab. The Nanofab uses a full facility 24-hour camera recording system to improve safety within the laboratory. Up to 14 days of footage is recorded on 20 cameras. This recorded footage is regularly checked at various locations for safety violations. The footage may also used when violations of safety and policy are reported by users. Users observed to be violating policies on the recordings will be contacted by the management for further discussions.

=='''Facility Equipment Policies'''==

===Getting Trained on Equipment===
The systems in the nanofabrication facility require operational training before authorization. Please contact tool owners for training as indicated on signupmonkey (described later) or on the lab wiki. All training is scheduled on an as-needed basis. During training on a piece of equipment, users should take notes and pay attention to all instructions given. Many systems have basic operating procedures to remind you of operation, but may not contain all of the information you need to successfully operate the system. Users are responsible for following written and oral instructions for the equipment. The tool pages of the laboratory wiki should also contain procedures that you can refer to ([[Tool List]]). If you are unsure about any aspect of operation of a system after training, please ask the engineer or senior users of the equipment for assistance. Please do not be embarrassed to ask for more details about training. It is much more important to understand the systems as we want to prevent failures. Some operation failures will prevent many users from being able to finish their work, take systems down for extended periods, and cost the lab money for repairing the damage to the tool. Occasionally we will need to share the cost of the repair with the group/company that damaged the system, if pure negligence is determined as the cause.

===Machine sign-up and use===
Most systems require web-based sign-up. (<nowiki>http://signupmonkey.ece.ucsb.edu,see</nowiki> below) for reservations.

#You must be trained and authorized before you can sign-up and use a facility system.
#There is a 15 minute grace period for you to use your time slot or someone else is allowed to use the system. If you don’t show for your time slot then any user can take all of your consecutive time slots not just that specific slot. It is the registered user's responsibility to make sure there is a note at the tool if they will show up later than 15 minutes before the beginning of their time slot in order to prevent another user from taking the reservation times for themselves on the system.
#If you show up to a system and the scheduled user is not there, but you want to use the system, you need to first attempt to contact the user. Phone numbers and emails are accessible on signupmonkey. You should also look around the lab to see if the person is present as they may be doing something like etch/characterization cycles that require them to step away from the system for short times. Only after making reasonable effort to contact the user may you take the slots at the 15-minute mark after the start of the reservation. If you take the time slots, please press the "Did Not Show" button on the appropriate time slot in the signup system.
#Schedule enough time for all procedures you need to perform so that you will not encroach on the next user’s time slot. This includes all pre-and post-cleaning of the tools, where applicable. '''This is every user’s responsibility and will result in suspensions if you abuse the system.''' The next user is not responsible for your scheduling issues. Do not take “extra” slots to buffer around your schedule, instead give yourself adequate time between process steps to accommodate difficulties. The Nanofab staff tracks and resolves non-shows and users that abuse the system.
#It is mandatory to fill in the appropriate information in the log books for each piece of equipment in the lab. This is often the only record of actual use and is necessary for any troubleshooting of equipment issues. '''Willful non-compliance or repeated failures will result in suspensions.'''

==='''Machine error response and reporting issues'''===
[[File:Lab Rules - 2.3 equipment maintaner contact sign.png|thumb|178x178px]]
To report a system issue, go to the signup system and press the “'''Report Tool Issue'''” button. This will send emails to the users and text messages to the tool supervisors. After pressing this button, you may directly contact the responsible engineer. Contact information for each responsible staff engineer is found directly above the tool, on signupmonkey, or on the wiki page. There is also a general mail list, nanofab@ece.ucsb.edu to all cleanroom staff for general questions or problems and for reporting issues with systems not on signupmonkey. The staff engineer will give training and post procedures for tool operation. Without proper training or posted procedures, users may not clear out errors or try undocumented procedures to get samples out of machines. They must contact the responsible engineer for assistance. All errors and issues must be entered in the tool log books.

#All issues, whether or not they are your fault, need to be promptly reported to the system engineer. Mistakes are tolerated and may result in required retraining, but '''hiding mistakes is immediate grounds for lab suspension.'''
#'''System Alarms''': If a system alarms, use the “'''Report Tool Issue'''” button on the signupmonkey, then the responsible engineer should be contacted for assistance, either by cell phone if at a reasonable time or by email. Do not attempt to fix the problem unless you have training from the responsible engineer. Sometimes after normal staff working hours machines will be down until the next working day. Please note in the log books that there is a problem with the tool and that the staff has been contacted.
#'''Software problems:''' Unless written directions are given at the system or training given by the responsible engineer, follow the same procedure as a system alarm regarding software problems. Do not restart the computer unless instructed to do so.
#Please always use the “'''Report Tool Issue'''” button in signupmonkey to report the issue so that the nanofab staff and subsequent users will be made aware of the issue. Then directly contact the tool engineer. For tools not on signupmonkey, send email to [[Mailto:nanofab@ece.ucsb.edu|nanofab@ece.ucsb.edu]] to report problems in case the tool engineer cannot be reached quickly.

===Equipment Maintenance===
All equipment is maintained by the professional staff. Users are not allowed to remove panels or alter subsystems within the machine unless directed to by staff. Significant electrical dangers including high voltage and high power RF exist within the panels of most machines.

===Preventative Maintenance===
This is done regularly on most tools to “reset” the tool to acceptable performance levels. If you believe a tool is not performing properly, please contact the responsible engineer and process support staff to discuss the problem.

===Hotplate use===
We have many hot plates in the facility used for a variety of applications.

#Hot plates used for heating chemicals must be attended. This means you must be in the Nanofab and monitoring the hot plate whenever it is in use. This does not apply to PR baking hotplates that are built in to the PR spinner benches or to hotplates in the solvent benches used for heating photoresist strippers. [[File:Lab Rules - 2.6.1 spinner bench hotplates.png|thumb|195x195px]]
#The nine built-in PR baking hotplates are preset at certain temperatures. They should not be changed unless you are directed by Nanofab staff. There are other freestanding hotplates to be used for custom temperatures. Please contact staff if you have any questions.
#Every group/company should have a temperature measuring device (thermometer, thermocouple or bi-metal sensor) to check hotplate temperatures. We check and calibrate the built-in, lift-pin, and the large wafer round hotplates weekly. But hotplates can fail or users may wrongly change standard temperatures so every user is accountable for verifying hotplate temperature before use. Please contact staff, hopkins@ece.ucsb.eduor day@ece.ucsb.eduwhen hotplates have failed or are out of specifications.
#The hotplates cannot be reserved. Please be conscientious about your hotplate use. Everyone needs to use them often so if you have a unique process that requires long baking or heating, contact Nanofab staff for a long term solution.
#All heated beaker chemistry must be covered by a watch glass or some type of cover (foil or custom cover). You can cut handles of wafer/piece carriers to be below the beaker cover or notch them to have a handle protrude thru the cover. '''There are no exceptions to this rule.'''
#Heated chemicals are more reactive and hot plates should be kept towards the back of the benches to minimize the possibility of being knocked over accidently and to minimize the possibility of exposure if a beaker breaks/cracks or is spilled while heated.
#Please leave hotplates in a clean condition. Do not contaminate the hotplate surface with solders, resists, low melting point metals or any other material that would jeopardize other user’s materials. It is every user’s responsibility to clean or check hotplates before and after use for any issues. A few extra minutes of cleaning up after ourselves makes the lab a better place for everyone to work.

=='''Visual and Audible Alarms in the Nanofab'''==

==='''Fire Alarm'''===
[[File:Lab Rules - 3.1 fire and gas alarms.png|thumb|281x281px]]
A fire alarm is indicated by a white strobe light on red boxes marked fire and sound off with a high volume audible alarm. These are located throughout the Nanofab. If this alarm activates, immediately leave the Nanofab through the nearest exit and proceed to exit the building. Do not take care of your samples, do not keep working in any way, and do not remove your bunnysuit until you are outside the building.

==='''Toxic Gas Alarm'''===
A toxic/flammable gas alarm is indicated by blue strobe lights on gray boxes and sound off with a high volume audible alarm. These are located at both ends of each bay. There are two levels for this alarm, the Single Bay Toxic Alarm (low-level) and the All Bays Toxic Alarm (high-level), which are set based on health and explosion limits of the particular gases being detected. The detection satellites for these gases are located in various locations in the vicinity of the equipment that use these gases

==='''Single Bay Toxic Alarm'''===
For a Single Bay Toxic Alarm, the blue strobe and audible alarm will only be active in one bay. Under these conditions, users may not remain in or enter that bay until the staff have isolated the issue and allow users back in the bay. Users may continue to use the rest of the Nanofab.

==='''All Bays Toxic Alarm'''===
For an All Bays Toxic Alarm a high level of dangerous gas has been detected. All blue strobes and audible alarms will be active in all bays. When this occurs, all users are to immediately leave the laboratory, and then the building, through the closest exits. Do not take care of your samples, do not keep working in any way, and do not remove your bunnysuit until you are outside the building.

==='''Wet Bench Alarms'''===
[[File:Lab Rules - 3.3 wet bench overhead controls.png|thumb|243x243px]]
Small illuminated visual alarms with buzzers. Each wet bench may have multiple labeled alarms. You must follow proper response if you see or hear a wet bench alarm.

====Pump Lift station alarm====
If the pump lift station alarm is activated all water will be shut off to the bench. Contact Nanofab staff.

====Exhaust Alarm====
If the lighted/audible red exhaust alarm indicator located on the upper bench panel is activated then you must leave the bench area. The bench is no longer safe to work at due to low exhaust levels. If all bench exhaust alarms are activated then you must leave the Nanofab. This condition usually indicates one or more of the lab exhaust fans has failed. This will make the entire lab un-safe for occupancy. De-gown as you would normally while exiting the Nanofab. Contact Nanofab staff.

===Equipment Alarms===
Please notify supervisor of tool if equipment alarm is activated using phone, personal email, or nanofabstaff@ece.ucsb.edu.

===Re-entering the lab after evacuation===
Users may re-enter the facility after an evacuation condition only after the laboratory facility manager has authorized re-entry. No exceptions.

=='''Emergencies and First Aid'''==

==='''Personal Injury – Chemical'''===
'''If you have been exposed to a toxic substance or gas, if appropriate rinse in one of the emergency showers for a minimum 15 minutes.'''

'''In all cases, quickly get to the emergency room at Goleta Valley Hospital located at 351 South Patterson, Santa Barbara.'''
[[File:Lab Rules - 4.1 map to cottage hospital.png|none|thumb|489x489px]]

==='''Emergency Showers/Eye Wash'''===
[[File:Lab Rules - 4.2 eye wash and shower.png|thumb]]
Emergency showers and eye wash stations are located at the south end of all bays. An enclosed emergency shower is located in Bay 5 beside the wet etch benches. There is a clean Nanofab gown in the shower and tubes of calcium gluconate for any HF exposure. A first aid kit is located in the gowning room, and on the south wall (towards

the windows) at the end of bays 2, 4, and 6.

==='''AED (automated external defibrillator)'''===
[[File:Lab Rules - 4.3 AED.png|thumb]]
There is an AED (automated external defibrillator) in the gowning room next to the entry door. It is a portable electronic device that automatically diagnoses the potentially life threatening cardiac arrhythmias of ventricular fibrillation and ventricular tachycardiain apatient and is able to treat them through defibrillation, the application of electrical therapy which stops the arrhythmia, allowing the heart to reestablish an effective rhythm. This type of heart condition is commonly caused by electrical shock. The gowning room also has a CPR kit, first aid kit and ear plugs by the entry door.

==='''Chemical Spills'''===
[[File:Lab Rules - 4.4 supplies rack chemical spill cleanup.png|thumb]]
'''If unsure, Always assume a liquid on the floor could be a hazardous chemical. Always verify the pH of an unknown floor spill with the pH strips stocked on the wire racks in bays containing wet chemistry.'''

For small spills, use the appropriate chemical spill clean-up kit, yellow hazardous bag and EH&S tags, place bag into chemical waste storage cabinet located in service chase 5. Chemical spill clean-up kits and yellow hazardous bags are located on the wire shelving in each bay containing a wet bench. After using a spill cleanup kit, please inform the Nanofab staff. For large spills, immediately contact the Nanofab staff and evacuate people from the area. If off hours, please remain at Nanofab entrance until on call staff arrive and prevent users from entering the Nanofab

==='''Lab Fire'''===
[[File:Lab Rules - 4.5 fire extinguisher.png|thumb]]
In the case that a lab fire arises at any bench or piece of equipment, immediately hit the Emergency Power Off (EPO) button for the bench/equipment. You may then grab a fire extinguisher and put out the small fire. Halotron fire extinguishers are located on the south end of each clean bay, and the north end of each maintenance chase. Halotron is rated as an ABC extinguisher. It is used on electronic equipment because it leaves no residue. You are not required to extinguish a fire, but if you are confident and have been trained in the use of a fire extinguisher, then it is a subjective decision to fight a small fire. If in doubt, hit the emergency off for the affected bench or equipment, immediately pull fire alarm and exit building. Please review the first floor Nanofab/Engineering Science Building evacuation map below.

==='''For emergencies after hours'''===
[[File:Lab Rules - 4.6 after hours contact sign.png|thumb]]
Contact the Nanofab cell phone ('''[[Tel:805-451-0509|805-451-0509]]''') for non-injury producing events, but not for simple equipment failures or issues. The cell phone number is also posted under the clocks at the end of each Bay. You can dial 911 from you cell phone or dial 9-911 from all Nanofab phones for life threatening emergencies. The campus phone will connect you directly to UCSB Police Dispatch. Remember, dialing 911 on your personal cell phone connects you to a county dispatch and not a campus dispatch so you will need to give them location information. The campus dispatch will know by the campus phone number where you are located on campus.

==='''UCSB NanoFab Exit Map'''===
[[File:Lab Rules - 4.7 exit map.png|1260x1260px]]

=='''HF/TMAH exposure'''==

===HF Exposure to Skin===

#[[File:Lab Rules - 5.1.1 HF exposure response calgonate.png|thumb]]Immediately rinse exposed area for 15 minutes in safety shower, flush affected area thoroughly. Speed and thoroughness in washing off the acid is of primary importance. An enclosed emergency shower is located in bay 5 across from the HF wet etch bench. Remember, do not touch the exposed area with your bare hands.
#Immediately after rinsing, start massaging 2.5% calcium gluconate gel into the affected. The individual applying the gel should wear gloves. Apply gel frequently and massage continuously. Calcium gluconate gel is located to the left of the HF bench in a pocket mounted to the side of the bench and at the shower stall in Bay 5.
#Take the victim to Goleta Valley Cottage Hospital emergency room. Call 9-911 from Nanofab phones for transport by ambulance if necessary.
#Continue rubbing gel on affected area until advised otherwise by physician.

===HF Exposure to Eyes===

#Immediately rinse exposed area for 15 minutes at eye wash station. Hold eyelids open during irrigation to allow thorough flushing of the eyes. Water will spill onto floor of Nanofab - this is OK.
#Take victim to Goleta Valley Cottage Hospital emergency room. Call 9- 911 from Nanofab phones for transport by ambulance if necessary.

==='''TetraMethyl Ammonium Hydroxide (TMAH) Exposure'''===
TMAH is a component in several photoresist developers and strippers, and is also used in the Nanofab as an ebeam resist developer and silicon etchant. The concentration of TMAH in photoresist developer and stripper solutions is relatively low (2-4%). However, the HSQ ebeam resist developer and silicon etchant utilize a solution of 25% TMAH.

====TMAH Exposure to Skin, 25% Concentration====
Immediately rinse exposed area for at least 15 minutes in safety shower, flush affected area thoroughly. An enclosed emergency showers is located in bay 5 across from the HF/TMAH wet etch bench. If using the emergency shower at the end of the bay, water will spill onto floor of Nanofab - this is OK.

#Seek immediate medical attention by calling 9-911 from Nanofab phones.

====TMAH Exposure to Skin, 2%-4%Concentration====

#If small area skin exposure (<1% body surface area, <approximately 25 inches2) to 2-4% TMAH, immediately rinse exposed area until skin feels normal (not greasy). If irritation occurs, consult a physician.
#If medium to large area skin exposure (>1% body surface area, >approximately 25 inches2) to 2-4% TMAH, immediately rinse exposed area for at least 15 minutes in safety shower, flush affected area thoroughly. An enclosed emergency shower is located in bay 5 across from the HF/TMAH wet bench. If using the emergency shower at the end of the bay, water will spill onto floor of Nanofab - this is OK. Seek immediate medical attention by calling 9-911 from Nanofab phones or using your cell phone to dial 911.

====TMAH Exposure to Eyes, Any Concentration====

#Immediately rinse exposed area for at least 15 minutes at eye wash station. Hold eyelids open during irrigation to allow thorough flushing of the eyes. Water will spill onto floor of Nanofab - this is OK.
#Seek immediate medical attention by calling 9-911 from Nanofab phones or using your cell phone to dial 911

==Pregnancy and the Nanofab==
The effects on a fetus of many of the chemicals utilized in the Nanofab is unknown. The Nanofab is designed to prevent exposure to the fumes and vapors from these chemicals, but absolute 100% containment is impossible, and it is possible to be exposed to extremely small concentrations of these materials. Consequently, we strongly recommend that you do not work in the Nanofab if you know or suspect that you are pregnant.

==Chemicals in the Nanofab==

===General Information and the SDS (or MSDS)===
[[File:Lab Rules - 7.1 MSDS binders.png|thumb]]
All chemicals, compounds, gases, materials for evaporation, etc., must be approved by the Nanofab manager before introduction into the facility. In order to introduce a new material into the Nanofab, a SDS (Safety Data Sheet) for the material in .pdf format must be submitted to the Nanofab manager, along with any anticipated processes involving the new material. The SDS contains safety information regarding exposure, first aid, handling, storage, fire hazard, other chemical incompatibilities, etc., for all chemicals, gases, and materials present in the facility. Before using an unfamiliar material, consult the SDS to determine any potential hazards. Consult the SDS to determine the proper course of action if someone has been exposed to a gas or chemical, or a spill has occurred. Binders containing the SDS for any material used in the Nanofab is located just inside the gowning room. Additionally, an electronic version of the (M)SDS in .pdf format for all chemicals in our inventory is located on our wiki page. Quick google searches on internet connected devices can also bring up SDS’s rather quickly.

All users are expected to read and understand the SDS (Safety Data Sheets) for all chemicals they use in the facility, even if the usage or process has been passed down from previous group members. Users that understand the dangers and incompatibilities of the chemicals they work with are safer users. Users should also understand how to mix chemicals properly to avoid potential exothermic reactions. It is the responsibility of the user and their PI to make sure chemicals are mixed and used in a safe manner and that proper PPE is worn for the chemicals being used. Users may contact the facility management for guidance if unsure of proper chemical use and handling for given chemicals.

===Containers and Labeling===

#Chemical containers such as beakers, bottles, etc., must be labeled with '''contents, date, and ownership (individual or group name)'''. This information can be written on a wipe under the container. '''Noncompliance of this policy can result in lab suspension.'''
##'''ALL Containers''' containing any liquids must be '''labelled''' at '''ALL TIMES, even if you are standing next to the container. No exceptions.'''
##A beaker in use on a solvent bench can contain acetone, propanol, or methanol if the beaker is labeled with the text: “acetone/propanol/methanol”. The generic label “solvent” is insufficient. Beakers containing solvents other that acetone, propanol, or methanol must be labeled with the specific solvent.
##Beakers in use at lithography developer benches must be labeled with exact contents and ownership (individual or group name). The generic label “developer” is insufficient.
##“Acid” or “Base” is insufficient as a label. You must have the chemical name. Common names of user-mixed chemical mixtures such as “Aqua-Regia”, “RCA-2”, “Piranha” are also insufficient. Mixtures must be properly labeled such as “Sulfuric Acid: Hydrogen Peroxide” or “Hydrochloric Acid: Nitric Acid” when mixed by users. Premixed chemicals poured from manufacturer bottles may be labeled as on the bottle. “Gold-Etchant – Type TFA” or “Al-Etchant Type D”, or “Nanostrip” etc. are acceptable for chemical designation.

====Chemical compatibility with containers====

#Most chemicals are compatible with glass (Pyrex, fused silicas, or quartz) containers. Compatibility with various forms of plastic are determined on a case by case basis using chemical compatibility charts available on various websites.
#HF: Glass beakers are not compatible with HF containing acids. Use PTFE, Nalgene, or other forms of Teflon-like materials.

====Transporting Chemicals from bench to bench====

#Users may not transport open containers of chemicals from bench to bench. This is an unsafe practice and there are no exceptions, including water.
#In order to transfer containers with chemicals from bench to bench when there is not another alternative, you may do the following:
##Get a large HDPE sealable plastic tub and place it in the bench.
##Place your beaker (or other open container) in the tub
##Put lid on and snap shut the lid so that it is secure.
##Transport the enclosed bin to the other bench.
##Place in hood, open lid, remove chemical, place empty bin under the bench.
##Use the same procedure for transporting large water beakers to the etchers (for water soaks after etch) and back to the benches for draining.

===Chemical Storage===
If you are approved to bring in a new material, the lab manager will instruct you to where you are allowed to use the chemistry and to store your material. You are not allowed to store any chemicals in your personal blue bins. All chemicals must be stored in approved locations. The general rules are as follows:

====Using Chemicals====
Common sense dictates that you select the opened bottle of any necessary chemistry first that you need to use. This will minimize waste and possible contamination of the stored chemistry.
[[File:Lab Rules - 7.3 acid cabinet.png|right|132x132px]]

====Acid Storage====
[[File:Lab Rules - 7.3.2 base cabinet.png|right|137x137px]]
The primary acid storage area (except HF) is the located next to the acid wet processing benches in bay 5. HF acid is stored in the HF cabinet in Bay 5. Some materials are placed in bins (or on particular shelves) within the cabinet to keep any spill physically separated from other incompatible, but acidic, materials that may also be stored in the same cabinet. Users must store the acids in the proper designated places as directed by the staff.

====Base Storage====
The primary base storage area is the base cabinet located next to the acid wet processing bench in Bay 5. Some materials are placed in bins (or on particular shelves) within the cabinet to keep any spill physically separated from other incompatible, but caustic, materials that may also be stored in the same cabinet. Users must store the bases in the proper designated places as directed by the staff.
[[File:Lab Rules - 7.3.4 Solvent + PR storage.png|alt=Solvent and Photoresist Storage|thumb|261x261px|Solvent and Photoresist Storage]]

====Solvent Storage====
The primary solvent storage area is the stainless steel flammables cabinet in Bay 6. You may store small amounts of solvents in labeled containers on the shelves in the photolith area. Other unique solvents should be stored in the User Solvent cabinet in service chase 6. If too many small user bottles are being stored on shelves in the benches, the staff may announce a cleanup and “reset” the benches as a means of keeping the benches in order.

====Photoresist Storage====
Photoresist can contain many solvents and aromatics that are potentially toxic. Special care must be exercised when handling these materials. All photoresist fumes must be exhausted or otherwise contained through careful procedures at the photolith wet benches. The primary photoresist storage area is the lab refrigerator located in Bay 6. The few resists that do not need refrigeration are stored in the spinner benches on the back shelf (PMGI, PMMA, etc.).

=====Transfer to Small(Personal) Bottles=====
Small brown bottles of various sizes are provided to you on the wire racks. Transfer resist from the main bottle to your small bottle while the resist is cold. Do not let the main resist bottle warm up. You do not need to worry about condensation when transferring resist from the cold bottle to your container as we have set the refrigerator temp to be above the normal dew point (~10C) for the Nanofab. If you see any condensation forming on the bottles please inform the Nanofab staff. Large transfer pipettes are provided for transferring PR from the main bottle to your in-use bottle. To prevent PR flakes from contaminating the main bottle, please inspect the main bottle cap and bottle threads for PR, and remove any PR with EBR and a wipe before replacing cap. After transfer, place main bottle back in the refrigerator.
[[File:Lab Rules - 7.3.5.2 PR Cabinet.png|thumb]]

=====Small (Personal) Bottle Storage=====
You may store your in-use, fully labeled PR bottle in the stainless steel PR storage cabinet in a bin labeled with your research group name (shown). Disposable droppers, syringes, and filters are provided for the application of photoresist on your substrate. You may store photoresist in the PR storage cabinet for a maximum of 12 months. Nanofab staff will remove in-use PR bottles older than 12 months, and will also remove any bottle not correctly labeled with contents, date, and ownership.

====Materials needing refrigeration====
[[File:Lab Rules - 7.3.6 refrigerators.png|thumb|191x191px]]
There are two refrigerators in the Nanofab for resist/chemical storage. The main refrigerator in Bay 6 is set at ~10C and most of the resists are stored. There is a small freezer in service chase 5 that is set at -20C for lower temp storage needs.

===Solvent Processing===
'''Solvents with flashpoints below 55C° cannot be heated in the Nanofab.''' This includes acetone, methanol, isopropanol, ethanol, and toluene. All solvent processing is limited to the stainless steel solvent processing benches. Do not perform standard solvent processing at the photoresist spinner benches. The only solvent allowed at the PR spinner benches is EBR100 (PGMEA). '''Do not cover the holes on the fronts of the benches with wipes as this will disrupt the exhaust resulting in fumes escaping the bench.'''

===Acid/Base and HF/TMAH/Bromine Processing===
You may not deviate from these policies unless you have prior approval by the Nanofab manager.

#All wet processing involving acids and bases ('''except HF or any mixture including HF, Bromine, TMAH >5%, and developers''') is limited to the acid/base benches. Do not bring acids/bases to the solvent stainless-steel benches.
#All HF, TMAH >5%, and Bromine-based processing is limited to the two HF/TMAH wet benches in bay 5 and wet bench in bay 4 - NO EXCEPTIONS. Store all HF, TMAH >5%, and bromine in labeled containers in the HF acid/bromine storage cabinet. Please keep open containers of these toxic chemicals away from the edge of the bench. Waste solutions containing HF and TMAH are poured down the drain, and treated in the Nanofab acid treatment system. Empty HF and concentrated TMAH bottles should be returned to the HF acid storage cabinet.[[File:Lab Rules - 7.5.3 acid benches PPE.png|thumb|194x194px]]
#Personal Protective Equipment: When working at any HF/TMAH bench (bay 4 and bay 5) always wear:
##'''fully-sleeved chemical apron,'''
##'''face shield, and'''
##'''“TRIonic E-194” (Nitrile/Neoprene/Latex Blend) thicker gloves.'''
#When working with other acids/bases at the benches, use appropriate PPE based on the materials being used by you or others at the bench. Full gowning and face-shields are recommended for heated or high concentration acid processing, especially piranha.
#Always keep your face above the sash as much as possible to minimize exposure to the head in case of an accident. '''Do not cover the holes on the fronts of the benches''' with wipes as this will disrupt the exhaust resulting in fumes escaping the bench.
#'''Do not use wipes in the sinks'''. Wipes cause many issues in the sinks. They are not needed in the sinks. Do not leave broken glass in the sink. If glassware is broken in the sink, the nanofab staff can assist in cleanup. Do not ignore a clogged sink. If a drain is clogged, promptly report this to the nanofab staff using the nanofab@ece.ucsb.eduemail address.

===Photoresist Coating or Spinning===

#Standard solvent-based photoresist spinning should be performed at the PR spinner benches. Some lithography chemicals utilize non-standard chemicals in place of solvents, which may require spinning at a different bench. If using non-standard lithography chemicals, please provide the (M)SDS and process instructions to the Nanofab manager for direction in this matter. Spin-coaters have standard recipes 2-9 programmed into all units. '''Do not change these recipes'''. Recipes 0 and 1 can be changed at will for user-defined spincoat processes. A variety of spin-coating chucks are provided by the facility. Use a chuck appropriate for the sample size you are using. Make sure chuck surfaces are clean when done. Do not remove the O-ring from the chuck. If you need a specialized chuck, please discuss with the Nanofab staff. Unless you purchased the chuck separately for your research group, '''all chucks are the property of the Nanofab and may not be taken and placed in your box for your own personal use. Non-compliance of this policy can result in lab suspension.'''[[File:Lab Rules - 7.6.2 spin bowl liners on racks.png|thumb]]
#Spin Bowl Liners: Use two large orange backed wipes to line the bowl before spinning resist. Place them at 45 degrees relative to each other so that wipes cover the maximum amount of bowl area. If the wipe is saturated with resist, remove the top wipe and place in the beaker at the back of the bench after you are done with your coating process. NEVER place/dispose of the spin bowl liners or any other resist coated material into the regular trash or other non-exhausted area.
#Adhesion Promoters: HMDS is commonly used as an adhesion promoter. Samples can be soaked in HMDS on the spinner chuck and then spun dry. Residual HMDS vapor can interact with resist and inhibit development, so it is recommended to either replace the wipe in the bowl after HMDS or to use the nitrogen gun to dry residuals from the liner wipes before spin coating the resist.

===Developer Benches===

#Developer benches are used for developing photoresists only using Hydroxide-based developers such as AZ400K or MIF developers. In general, solvents are not allowed at the developer benches because solvent fumes adversely affect the develop process. Solvent based liftoff processes are not allowed at the developer benches. E-beam lithography development processes that utilize solvents such as MIBK and IPA should be performed at the solvent benches in the photolith area. If you are unsure of where you should develop wafers, contact the lab management.

===Cyanide-based processing===
'''All compounds containing cyanide needs to be approved for use by the lab management. These materials are typically used only at the stainless steel solvent bench in Bay 5, where no acids are allowed. Never bring cyanide-based compounds to the acid bench. All waste is collected and stored in a designated cabinet. A procedure for use will be determined by the lab manager upon each request.'''

===Photoresist Handling, and Waste===
[[File:Lab Rules - 7.9 PR spinner.png|thumb|149x149px]]
Photoresist can contain many solvents and aromatics that are potentially toxic. Special care must be exercised when handling these materials. All photoresist fumes must be exhausted or otherwise contained through careful procedures at the photolith wet benches. Disposable droppers, syringes, and filters are provided for the application of photoresist on your substrate. Nanofab wipes and pipettes contaminated with PR must be placed in the provided beaker containers at the back of the spinner benches. Do not place PR contaminated materials in the trashcans, as this will allow photoresist fumes to migrate throughout the photolith area. Dispose of waste photoresist bottles by placing your labeled bottle in the yellow solvent waste cabinet at the North end of chase 5.

===Photoresist Strippers===
Use of heated photoresist strippers (such as NMP) is limited to the stainless steel solvent benches. It is recommended you use the heated water bath to heat your stripper to 80 C. If you choose to use a hot plate to heat commercial photoresist strippers, you may use a maximum hot plate temperature 80 C, even though the liquid will not reach the plate temperature. You may place a small amount of water under your glass container to facilitate heat transfer. Again, you may never use a hot plate above 80C at any time while heating PR strippers in the Nanofab.

===Powders and Nanoparticles===
Nanoparticles and powders present unique challenges. In general, all nanoparticles and powders must be in solution before bringing into the nanofab. Any user needing to use nanoparticles or powders must discuss this with the operational director before using in the facility. (M)SDS sheets for bulk materials are not sufficient regarding the dangers of nanoparticles of the same material type.

===Chemical Waste Disposal===
[[File:Lab Rules - 7.12.1 chemical storage-disposal sheet.png|thumb]]

====General Guidelines====

#The correct method of disposal for any chemical waste in our inventory is posted throughout the Nanofab on the sides of the benches.
#'''DO NOT DISPOSE OF''' '''SOLVENTS IN THE ACID DRAIN,''' '''OR''' '''ACIDS AND BASES IN THE SOLVENT DRAINS''' '''DUE TO''' '''POSSIBLE EXPLOSION OR THE CREATION OF OTHER HAZARDOUS SITUATIONS.''' If you are unsure about any chemical disposal procedure, please contact the nanofab staff to discuss.

====Methods of Chemical Disposal====
All chemical waste is disposed of in one of three methods:

=====Acid drains=====
[[File:Lab Rules - 7.12.2.1 developer drain and lift station.png|thumb]]
Most (but not all) water-based chemicals use this method. All liquid waste from the plastic benches is collected in pump lift stations behind the benches in the service chases. These lift stations pump the waste chemicals overhead to an acid waste neutralization (AWN) system located outside of the Nanofab in the mechanical room where the chemical waste is treated for pH and then drained to the sewer. This is the primary drain in the Nanofab. All liquids entering the sink drain at any polypropylene wet bench in the Nanofab run through this treatment system. To dispose of an acid or base, pour the liquid down the drain, rinse and drain glassware 3 times, use the sprayer to dilute the mixture in the sink while draining, and use the plenum flush to help dilute/rinse the chemical into the lift stations (especially for concentrated acid mixtures). There are also venturi aspirators at the

back of all acid/base benches to pump the chemistry from larger beakers so that you do not have to pick them up and pour them in to the sinks. When using this technique, always use the plenum flush and rinse your beakers when done. '''Do not pour the liquid thru the perforated tops'''. If you spill an acid or base onto the top surface of a bench, first rinse the surface thoroughly with water using the DI sprayers, then turn on the plenum flush to rinse the bench drain. '''Do not pour solvents down the acid drain'''.

=====Solvent dumps=====
[[File:Lab Rules - 7.12.2.2 solvent drain and lift station.png|thumb]]
Waste solvents are poured into the solvent dumps at the back of each solvent bench. Most (but not all) solvent waste uses this method. '''Do not pour the liquid thru the perforated tops.Do not pour waste over the POLOS spinners'''. The solvent drain waste is collected in a pump lift station in the service chases. The lift stations pump when full to a storage tank located in the Nanofab mechanical room. The waste solvents are transported to the EH&S chemical waste processing facility and are properly disposed. '''Do not use acids or bases at the solvent benches'''.

=====Collection of chemical waste=====
Some chemicals require collection according to state regulations. When this is the case, always fill out the Environmental Health and Safety waste disposal tags that are provided at the waste cabinet in service chase 5. Fill out each tag with the appropriate information when disposing of collected chemical waste. EH&S will only remove properly labeled waste bags and containers. Nanofab staff can assist with this process.

====Disposing of Empty Acid, Base, and Solvent Bottles====
All chemical storage cabinets have a shelf labeled for empty containers. Place empty containers in the respective cabinet. Do not rinse any empty chemical containers. Nanofab staff will collect all empty bottles from the cabinets and properly rinse and dispose into the trash.

==Nanofab Apparel and Gloves==

===Bunnysuits and Booties===

#You must wear a full bunnysuit to enter the Nanofab (hood, gown, shoe covers). Facial covers are optional. Change bunnysuits weekly if used often, or at least once a month if used sporadically. There is a laundry window by the glove rack where all dirty cleanroom gowns, hoods and booties should be placed.
#Sandals or any other open toed shoes are not allowed in the Nanofab at any time. The only protection to your feet are provided by the closed toe shoes you are wearing under the booties. Shorts are allowed under bunny suits, but long pants are better.[[File:Lab Rules - 6.1.3 hangar reservation sheet.png|thumb]]
#Store gowns and hoods on the numbered hangers in the gowning room. Store booties in the corresponding numbered slot in the bootie storage rack. '''You must then clearly write your name on the hanger reservation'''list posted on the wall where the safety glasses are stored in the gowning room. Please follow these simple instructions. Gown use and laundering directly affects your recharge rates. Abuse of this system is a sad waste of money on facility cost than research investment. '''Failure to comply with this policy will result in your gown being removed and possible suspension from the lab'''.

===Eye Protection===
ANSI-approved eye protection must be worn at all times in the Nanofab, except when using optical microscopes. All eye protection eyewear must be ANSI-approved, as indicated by the “Z87” stamp required on the eyewear. You are welcome to use personal prescription safety eyewear which is ANSI-approved. Three types of safety eyewear are stocked in the Nanofab:

#Safety glasses used by people who do not wear vision correction glasses.
#Safety glasses used for use by people who do wear vision correction glasses. These safety glasses are intended to be worn over vision correction glasses.
#U.S. Safety Faceshield. The full faceshields must be worn when working with dangerous chemicals or materials. '''You should always try to keep the sash between your face and the chemistry in the bench.'''Remember it is not just your chemistry, but other user’s chemistry at the bench could cause a hazard. Any time your face is below the sash of a wet bench a safety faceshield should be worn. It is mandatory to wear a faceshield when working at the HF/TMAH bench.
#'''Failure to have on appropriate eye protection is a clear violation of the PPE policy and will result in lab suspension.'''

===Aprons and Gloves===

====General Information====
[[File:Lab Rules - 6.3.1.4 glove racks.png|thumb|Glove racks in gowning room and throughout the 'fab.]]
'''Always wear gloves when in the Nanofab'''. Gloves are intended to protect you from chemistry when the appropriate glove is used and to protect equipment (vacuum systems, table tops, etc.) from contamination from your skin. Acid aprons are

required when handling HF/TMAH and other highly corrosive or toxic chemicals. It is acceptable to wear an apron at any of the acid/base benches.

#You are not allowed to walk from one bay to another or use any lab equipment while gowned in the acid aprons, face shield or Trionic gloves used at the acid/base benches. This is to prevent possible chemical contamination of other equipment/areas in the lab. You must remove these items when leaving the acid/base/HF/TMAH wet bench areas of bays 4 or 5.
#There are many manufacturer on-line websites listing chemical resistance of gloves. Please check these guidelines and the SDS when selecting proper glove for a particular chemical.
#'''Five types of gloves are available in the Nanofab:'''

{| class="wikitable"
|'''Material'''
|'''Model'''
|'''Color'''
|'''Thickness'''
|'''Sizes'''
|-
|PVC
|Kimtech G5 Co-Polymer
|Clear
|0.1mm (4mil)
|S, M, L, XL
|-
|Latex
|Kimtech G3 Latex
|Tan
|0.2mm (8mil)
|6, 6.5, 7, 7.5, 8, 8.5, 9, 10
|-
|Nitrile
|Best CleaN-Dex Ultimate
|White
|0.15mm (6mil)
|XS, S, M, L, XL
|-
|Nitrile
|MAPA StanSolve A-30
|Green
|0.28mm (11mil)
|7, 8, 9, 10, 11
|-
|Blend
|MAPA TRIonic E-194
|Tan
|0.5mm (20mil)
|6, 7, 8, 9, 10, 11
|}

=====Polyvinyl Chloride (PVC): Kimtech G5 Co-Polymer=====
A relatively inexpensive static free general-purpose glove, poor for most organics. These gloves break down rapidly in acetone.

=====Latex: Kimtech G3 Latex=====
A general-purpose glove, poor for most organics, okay with aldehydes and keytones.

=====Nitrile, White: Best CleaN-Dex Ultimate=====
A thin general purpose low cost glove offers marginal protection from many keytones, okay with some acids and bases.

=====Nitrile, Green: MAPA StanSolve A-30=====
A thicker nitrile glove that affords increased protection over the CleaN-Dex white nitrile glove.

=====Nitrile/Neoprene/Latex Blend: MAPA TRIonic E-194=====
The glove is the standard wet processing glove. A blend of latex, neoprene, and carboxylated nitrile, which offers excellent protection from corrosives and solvents such as HF and acetone. Highly resistant to cuts, tears, and snags. Always use this glove when processing with HF, TMAH, or Bromine.

==Communications and Internet Access==
The basic approach to lab communications is that the Nanofab staff/management must be able to contact every user of the lab. All user emails and phone numbers must be current. '''If the Nanofab can’t communicate with you then you can’t enter/use the lab.''' Most of our systems will automatically remove you from the lab if your email bounces. If that happens then your access will be shut off to enter the lab. '''This is the user’s responsibility to make sure the contact info is correct and up to date'''.

===Process Equipment Scheduling===
The majority of the processing tools in the Nanofab are scheduled through a web-based equipment scheduling system known as “'''signup monkey'''”. Anyone with Nanofab access can view the site, but only users who have completed training on a tool will be able to schedule use of that tool. The site address is:

http://signupmonkey.ece.ucsb.edu. Once you have been trained by the specific staff engineer in charge of a system then you will be able to reserve time on the tool through signupmonkey.

There is more information about the system on our wiki page: [[Main Page|https://wiki.nanotech.ucsb.edu/w/index.php?title=Main_Page.]]

#'''Script writing for tool sign-up is forbidden'''. '''Users caught trying to run scripts will be suspended from the cleanroom without exception.'''
#Users must sign up for all tools on signup monkey before use. The only exception is when another user did not show up for their timeslot and you take it'''.'''
#Only trained/authorized users may operate process equipment. The tool owner is responsible for this training. '''Users will be suspended without exception for using equipment they are not authorized to use'''.

[[File:Lab Rules - 7.2 signupmonkey.png|none|thumb|484x484px|SignupMonkey, the online tool reservation system.]]

===Saving Data in the NanoFab===
The Nanofab does not allow USB memory sticks for saving electronic files. USB ports are disabled on most computers to prevent the spread of viruses. Instead, you can download your files from our SFTP server, Nanofiles. As long as you place your files into the proper folder on the computer, your files will be synced to the '''Nanofiles STFP server'''every hour (or immediately by running the "''Sync to NanoFiles''" script). For instructions on how to access these files, and where to place your files, please log into your '''SignupMonkey''' account and click the “here” link under '''Files''' on the front page as shown below. The email you receive will give you instructions on accessing/syncing to the '''Nanofiles server'''.

===Cell phone and Laptops===
It is fine to bring in your cell phones and laptops into the Nanofab. You need to clean your laptops and cellphones with ISO or ISO/Water before bringing them into the cleanroom.

===Earbuds===
You can use earbuds in the lab to listen to whatever you want. '''But it is your responsibility to make sure you can also hear other users or staff at all times'''. This is a clear safety issue if not followed. The use of earbuds is a privilege, not a necessity. '''Please do not abuse this policy as it can be removed. Willful non-compliance will result in a lab suspension'''.

===Global Nanofab email List===
All Nanofab users will be entered into our cleanroom@ece.ucsb.edu mail list. This is how the Nanofab staff/management will communicate with all users of the lab.

It is critical and '''required that you read all these emails''' as there will be important updates/announcements about lab policy, lab closures and any major lab events occurring.

===User Responsibility for Receiving Communications===
'''It is the users’ responsibility to make sure they are receiving emails from both cleanroom@ece.ucsb.eduand our signupmonkey'''. You must check with your IT people to make sure these emails are allowed and not placed in spam or denied from your emails. It is mandatory you receive and read all these emails.

===Contact Nanofab Staff===
You can contact staff through their individual email addresses or phones numbers. Or you can send an email to nanofab@ece.ucsb.edu which will contact all Nanofab staff. The appropriate staff will answer your email request.

===Synchronized Clocks===
[[File:Lab Rules - 7.8 clock + after hours contact.png|right]]
At the south end of all Nanofab bays are large digital clock displays mounted high on the south wall. These clocks are synchronized to one time and can be used as a timer for process. Contact Nanofab staff if they are not in sync. The emergency cell phone number is also displayed below these clocks.

===Wireless Access in the Nanofab and on campus===
All registered users should have a UCSBNetID to access the network. Repeaters are used within the facility to boost the signals.

====UCSB Secure====

#Everyone with a UCSBNetID can access this network.

====Eduroam (recommended)====

#Everyone with a UCSBNetID can access this network.

====UCSB Wireless Web (not recommended)====

#This wireless connection is open to anyone, but has very limited speeds and will not auto connect so you need to constantly log in and out.

==Nanofab Summer Intern Policy==

==='''Whenever the intern is in the Nanofab, the mentor must also be in the Nanofab.''' ===
Interns may use tools that do not require training sessions, such as microscopes, etc, unless the supervisor of these tools objects. Interns can work at photolith benches, and use components of the photolith benches, unless the supervisor of the bench objects. Interns will need to follow normal Nanofab access procedures, including orientation meeting with the Nanofab manager.

===Tool Usage by Interns===
Interns will be allowed to use a limited number of mainline Nanofab tools after completing training conducted by Nanofab staff. Mainline tools are tools scheduled through our web site signupmonkey. Certain tools may be unavailable to interns due to extremely heavy use or other concerns.

===Rates for Interns===
Summer interns will be charged a lower subsidized rate for use during the course of their internship. These rates are set each year. Please contact the lab director for more information.

Lab Rules

2026-06-04T22:26:29Z

John d: /* Procedure for the Use and Handling of Precious Metals */ moved procedure to end and using new Nanofab-metal-refill email list.

__NUMBEREDHEADINGS__

'''UCSB Nanofabrication Facility Policy, Guidelines and Chemical Hygiene Plan'''

''Use the '''''Table of Contents''''' below, or your browser's '''''Find''''' function to find a particular policy, or consult the '''''[[Frequently Asked Questions]]''''' which also links to common topics.''

''Save/print this document with your web browser's '''Print > Save as PDF''' function.''

==Summary==
While working in the Nanofab, you are surrounded by hazardous chemicals and gases, high voltages, radiation, and mechanical systems. It is impossible to define a policy for every conceivable situation.

'''The responsibility lies with users and staff to act in a professional, courteous, and safe manner at all times while in the facility.''' The Nanofab culture relies on self-discipline to follow policies, respect for each other, and careful considerate treatment of facility property that is needed for project success. Everyone’s work is equally important and the basic rule of treating others how you would like to be treated sets the framework for many policies in the facility. As a group we expect all users and staff to help maintain the safety and integrity of the Nanofab.

The Nanofab is not a teaching lab or a course in processing. The users are expected to have prior cleanroom experience and understand any chemistry or process used. All users should employ common sense and a high degree of prudence while working in this facility. Users violating the operating and safety rules of the facility or endangering the safety of themselves or other users may be denied further access to the facility.

This document attempts to define acceptable actions and behavior for the users of the Nanofabrication facility and contains extensive safety related information on common hazards and work practices and procedures within the facility.

__TOC__

=='''General Nanofab Information'''==

===Nanofab Prerequisite===
New Nanofab student users should have taken one of the UCSB process courses listed below before they can gain access to the lab or have demonstrated cleanroom experience. Cleanroom experience can be either work experience, or laboratory experience associated with a thin film process. '''It is the responsibility of all external users to have the proper training, both in general lab safety and the appropriate lab experience provided from their own institution.''' Experience exceptions are at the exclusive discretion of the operational director of the facility.

*EE220A (also known as MATRL215A)
*EE 220C (also known as MATRL215C)
*ME 141B
*ME 292
*EE 120A

===UCSB Laboratory Hazardous Assessment Tool (LHAT)===
Since there are multiple users of the facility, with their own unique projects, the management of the facility cannot be responsible for overseeing all aspects of their work. Therefore, the supervisors of individuals using the facility, e.g., UCSB '''Principal Investigators (PIs) and external user PIs or managers are ultimately responsible for ensuring that their supervisees have the appropriate knowledge and training to work safely in the facility.''' They are also responsible for ensuring that all applicable regulatory requirements are met. This includes having a compliant "'''Chemical Hygiene Plan" per OSHA regulations'''. The information in this document and on the [https://www.nanotech.ucsb.edu/wiki UCSB Nanofab wiki site], https://www.nanotech.ucsb.edu/wiki, should be considered as providing "general supporting information" to the Chemical Hygiene Plan of a particular supervisor. Supervisors can reference all or some of this information within their Plans, but this document does not constitute a complete plan. UCSB EH&S can provide assistance to supervisors in preparing their Plans.

===Laboratory Orientation and Initial Training===
All new users must take the initial fundamentals of laboratory safety course offered through the UC learning center. Additionally, there is a mandatory general orientation and in-lab wet bench training that is required. Contact the facility operational director to request access.

While in the laboratory, all personnel will wear facility provided bunny-suits, gloves, and Z87+ rated safety glasses at all times, unless noted by a specific policy exception.

===Chemical Bench Use Authorization===
There is a mandatory wet bench training that every user needs to attend before accessing any of the chemistry or wet benches, including simple rinsing with water. Please contact the operations manager for training.

===Lab Storage of User-Specific Materials ===

====Rules and allocation====
[[File:Lab Rules - 1.4.1 shelf space.png|thumb|170x170px]]
All Nanofab storage shelf space and the blue containers are controlled by the Nanofab. It is not open use. Please contact Bill Millerski (wmillerski@ucsb.edu) for new or additional shelf space. It is assigned by group or company. There is a finite shelf space so please first check within your own group to make sure shelf space is optimized and old users’ boxes have been removed or re-assigned before contacting Bill. Extra blue bins, lids and dividers are stored in the gowning room for use. '''Please do not use any other boxes on the shelves except for the blue bins provided by the Nanofab. If boxes are left out or stored on the wrong shelves they will be removed from the lab. Additionally, the Nanofab is not a long term storage facility and users should regularly review what they and their groups are storing in the lab so that items no longer needed can be removed to make room for others that may need the space.'''

A user’s job in the facility is not complete until all user-specific materials have been cleaned up and put away. All users are given space to store user-specific materials within the facility in a neat, organized fashion. In order to have space for everyone to work, all users must clean up their personal items and store them before leaving the lab for any time longer than a 30-minute break. Storage boxes found without the user being in the lab will be removed from the lab and stored in a secure location. The group/user name will be placed on a list in the facility that users can check to determine if their box has been taken by staff. The current location for this list is on the cabinet in service chase 4. Users will need to contact a staff member to retrieve boxes. There will be a charged fee of 30 minutes of staff time for each incident and this will be noted on the invoice. For continued violations there will be an escalation of consequences:

1st offense: fee

2nd offense within 12 months: fee

3rd time offense within 12 months: fee and warning of impending suspension

4th time offense within 12 months: fee, 2 day suspension, and supervisor notification

5th time offense within 12 months: fee, minimum 3 days suspension, and personal discussion with user and supervisor.

====Dry-Box/Dessicator====
[[File:Lab Rules - 1.4.2 dry box.png|thumb|153x153px]]
There is a large desiccator located in the main corridor close to Bays 6-7 along the wall. Users can store any sensitive materials in the desiccator. '''It will need to have the group identification, user contact info and date on each container'''. Each user/group must clean out old or unused material. Occasionally the staff will announce and clean out the cabinet of outdated materials. This unit is NOT for long term storage of materials, but for materials being actively processed in the facility.

====ASML Mask Storage====
[[File:Lab Rules - 1.4.3 ASML masks.png|thumb|161x161px]]
There is also shelf space for ASML mask plates behind the ASML Stepper. '''Only ASML masks can be stored on that shelf'''. All other photo-masks need to be stored in your blue containers or removed from the lab when not in use. You will be allowed to use the ASML shelf after official training on the ASML stepper. The shelf space is controlled by Demis D. John, [[Demis D. John|demis@ece.ucsb.edu]]. The Nanofab is not a long term storage facility. When a mask set will no longer be used, the users are responsible for removing these masks from the facility and storing them at another location. If items need to be kept clean, users should bag them in sealable bags before taking them out of the cleanroom.

===Lab Suspensions===
The lab has been operating for many years. Over this time it has been determined that there exist some fundamental rules and procedures that must be maintained to provide both a safe and productive environment. While it does not happen often and we do not want to prevent users from completing their work we have found that suspensions from the lab are sometimes necessary and must be taken seriously. The lab relies on an honor system as staff can’t be there at all times to maintain compliance. While working in the lab, we rely on users to follow all written and oral procedures (even if inconvenient) and to treat others with respect, honoring both the person and their work as you would your own. The lab has a large user base of more than 600 active users annually. Most infractions have warnings first and this is most often all that is needed. The goal of suspensions is to change behavior to conform to the rules and policies set forth in this document. Suspension durations will escalate until behaviors are changed to conform to the facility rules. Continued refusal to follow the facility policies and guidelines may result in eventual expulsion from facility use. PPE and other human safety violations at the wet benches should be expected to result in an immediate suspension. The duration of any suspension and any further escalation will be determined by the laboratory management after consideration of the events. At the exclusive discretion of the operational director, in addition to or in lieu of suspension, we may require a re-reading of this policy and the taking of a refresher quiz for violations. '''We will contact your PI or supervisor to acknowledge any suspension'''. Please be aware of this policy. If you are found in non-compliance with any policy it is your fault alone and no one else’s. You should handle this in the appropriate manner and correct your own behavior.

===Iris Camera and Card Access System===
[[File:Lab Rules - 1.6 iris scanner.png|thumb|97x97px]]
The Iris Camera and Card Access System provides security to the Nanofab, and allows tracking of the time each user spends in the Nanofab. '''Always scan in when entering the lab and scan out when exiting the lab, even when attending training sessions or performing beneficial work.''' The only exception to this rule is entering as a visitor as defined in the visitor policy below. '''Willful Violation this policy will result in suspension.''' This policy is both for safety (knowing who is in the lab in case of emergencies) and for fair, accurate billing of facility resources.

====After Hours Access====
The building is open from 7am to 6pm M-F, excluding holidays. During all other hours, the building is electronically locked. After hour access can be gained by using the iris reader or WHITE card reader on the south entrance (mountains are north, not the main entrance)

===Visitor Policy ===

====Badges====
Visitor badges can be obtained from the staff during the normal weekday hours and removes any confusion about the shadowing of another user without logging in. As a nonpaying person, a visitor can’t touch any equipment, computers or chemicals in the lab. We offer this policy as a courtesy so please do not abuse it as it can also be removed. The visitor badge must be worn outside the bunnysuit and be clearly visible at all times.

====Shadowing====
We encourage new users to shadow current users as a visitor to become familiar with the Nanofab before beginning actual work. To accomplish this, registered users may come in as visitors, with a badge, in order to watch and learn how processes are done. A logged-in user and visitor may not exchange roles while in the cleanroom together. Only the actively logged-in user may operate/touch/use any equipment in the laboratory. No exceptions.

====Visiting Researchers====
Professional, non-registered visitors such as research collaborators or new students in a research group can be brought into the lab to observe with the permission of laboratory staff during normal operating hours (8am-5pm M-F). Off-hours permission to bring in professional visitors will be evaluated on request by the operational director or co-manager.

====Non-professional visitors====
Non-professional visitors such as family members and friends can be brought into the lab during normal hours (8am-5pm M-F) only with permission of the operational director or co-manager. In general, these types of visits can be most effectively done looking through the windows of the long South hallway.

====Visitor Rules====
Any official user can bring in a visitor in to the Nanofab under the guidelines given above to observe the lab operation. The official user is wholly accountable for the visitor’s safety, correct gowning and adherence to the visitor policy. Please do not take this privilege lightly as we don’t want anyone to be injured while in the lab as a visitor.

====Groups====
Any “group” tour (3 or more people) inside the facility needs prior approval of the operational director or co-manager. Please give ample time when requesting.

====Violations====
The Nanofab relies on the honor system and the visitor “observation only” policy is clear. '''If users are caught violating the visitor policy and operating/handling anything in the lab while being a visitor both the official user host and the visitor will be suspended from the lab without exception.'''

===Credit for Beneficial Work in the Nanofab===

====Rules for Credit====
[[File:Lab Rules - 1.8.1 beneficial time sheet.png|thumb]]
You can receive a time credit for each hour of beneficial time given to the facility. The time you are in the lab for the beneficial time is subtracted from the invoice and an additional benefit of 0.5 hours for each hour is given as a credit. Beneficial time includes:

#performing maintenance on lab equipment,
#conducting training sessions for other groups (not for your own research group), or
#any time spent performing work beneficial to the general operation of the lab.

Please indicate time spent performing beneficial work on the sign-up sheet just inside the gowning room, with a description of what you did/who you worked with. The lab director will ultimately determine if the credit is given.

====Determining Nanofab beneficial lab time credit====
The two common ways for logging beneficial time:

#If you help staff with Nanofab related work such as maintenance, construction or cleanup of equipment or the lab.
#If you happen to help/train someone outside of your group, unplanned, while you are logged in to the Nanofab. Please review the below paragraphs to understand other situations.

====Training within your group====
When you are training a group member or any other user, the correct way to enter the Nanofab is to log in and then take the user in as a visitor with a Visitor Badge. We assume that you are training while you are performing your own work and the other user is only observing. Only one user can be using the equipment and that user should be charged for their use.

*'''This should not be logged as beneficial time as the visitor is not charged.'''

The other method would be for the new user that is being trained to log in and you will go in as the visitor. This will allow the new user to handle and operate systems while you observe his use as the visitor and give verbal guidance.

*'''This should not be logged as beneficial time as the visitor is not charged.'''

===User Responsibilities regarding Housekeeping===

====Work Surfaces====
Leave all workspaces (wet benches, table tops, and system work surfaces, etc.) '''clean''', '''dry, and organized'''. This includes cleaning up all spills and residues, storing glassware and chemicals, throwing away used wipes and Aluminum dishes, etc.

If a workspace is not clean when you start a task, you still have the responsibility to leave it clean.

'''If you leave any workspace in disarray, or leave an unlabeled container on any workspace, you can be suspended from the Nanofab.''' Please kindly remind other users to clean up after themselves if you see them leaving a mess and to label their containers when needed.

====Wet Benches====
For wet benches in particular: Do not cover the exhaust holes on the bench tops with wipes or foil, as this will impede the laminar flow of air through the bench and possibly expose you or other Nanofab users to toxic fumes. Glassware may be left to dry on the racks or, for large containers, at the back of the bench only while you are working in the lab. When you leave the lab, you are responsible for drying and putting away all of your glassware. A user’s job in the facility is not complete until all user-specific materials have been cleaned up and put away.

=====Glassware Confiscation Policy=====
Glassware left out to dry after you leave the lab for the day may be confiscated and put into a secure location for a time, before being disposed of. The group/user name will be placed on a list in the facility that users can check to determine if their materials have been taken by staff. The current location for this list is on the cabinet in service chase 4, and all Staff have key-access to this cabinet.

Make sure your glassware/wafer holders have a group name written on them. Items with no user or group name are subject to disposal. If you ask staff to retrieve your glassware and it is found, your PI/advisor/supervisor will be charged a fee of 30 minutes of staff time and this will be noted on the invoice. For continued violations there will be an escalation of consequences:

1st offense: fee

2nd offense within 12 months: fee

3rd time offense within 12 months: fee and warning of impending suspension

4th time offense within 12 months: fee, 2 day suspension, and supervisor notification

5th time offense within 12 months: fee, minimum 3 days suspension, and personal discussion with user and supervisor.

====Sharps Disposal====
[[File:Lab Rules - 1.9.3 glass sharps waste.png|thumb|104x104px]]
The sharps bins located around the lab should be used for any material, supplies, broken beakers, syringe tips, etc. that would penetrate through trash bags and possibly injure one of the custodians while they empty the waste. If glass is broken in the cleanroom, please notify staff via nanofab@ece.ucsb.edu so that we can assist in cleaning this up in a timely manner.

===Nanofab Paper and Cardboard===
[[File:Lab Rules - 1.10.1 supplies racks NanoFab paper.png|thumb|133x133px]]
The only paper allowed in the lab is cleanroom type paper. We provide/stock cleanroom paper, cleanroom notebooks and binders in the gowning room. You can laminate regular paper for use in the lab. Use pens, not pencils, for writing in the lab. No cardboard is allowed in the nanofab.

===NanoFab Wipes & Napkins===
We stock four types of wipes in the lab:

====S/Pec-Wipe 3====
This is a cellulose/polyester blend with high absorption but medium particle and fiber generation.

====Berkshire Poly1200====
This is a 100% knit polyethylene wipe with low particulate generation, but also with relatively low absorption. (This kind of wipe is expensive and only available upon special request)

====PRO-STAT====
This is a cellulose blend presaturated with isopropyl alcohol and DI water.

====BIOHAZ====
These are used to line photoresist spinner catch bowls.

====Rules for Napkins and WIpes====

#Use wipes sparingly. They should not be treated like paper towels. Take the few extra moments to '''only grab the number you really need'''. This reduces a lot of unnecessary waste & cost.
#Do not place wipes on the sink trays or sink bottoms.
#Dispose of used wipes in the proper manner. Wipes that have Photoresist or solvents on them should never be thrown in the trash, but should be placed in the proper waste bins located in the backs of the exhausted benches.

==='''Preparing Equipment for Entry into the Nanofab'''===
All equipment entering the lab must be clean. The procedure for cleaning equipment for entry is:

====Large Equipment====

#Vacuum while equipment is outside the lab.
#Wipe down all accessible surfaces with propanol using Nanofab wipes or presaturated propanol wipes while equipment is outside the lab.
#Move equipment into the lab
#Vacuum with HEPA filtered vacuum cleaner when inside the lab.

====Small Equipment====

#Blue boxes, laptops, cell phones, tablets, etc. can be wiped down with the presaturated alcohol/DI water wipes in the gowning room before entering, if dirty.

===Maintenance Ways===

#You may enter maintenance ways ("Chases") without wearing a bunnysuit from outside the Nanofab, or while wearing a bunnysuit from inside the Nanofab.
#In general, there are no user-serviceable facilities in the maintenance ways. Unless instructed otherwise by NanoFab staff, no user shall adjust or address anything in the service ways, including all regulators, gas bottles, valves, electrical power systems, exhaust dampers, backing pumps, chillers, etc. Staff should be called in the case of issues in the service chases.[[File:Lab Rules - 1.13.1 maintenance chase doors.png|thumb|187x187px]]

===Notes on Particle Counts in the Nanofab===

#The Nanofab has historically been surveyed with a particle counter, with generally good results. All laminar flow, wet bench work surfaces have extremely low particle counts, better than class 10. The open areas in the lithography area are all better than class 100, and mostly better than class 10. The remainder of the Nanofab tests better than class 1000, and often better than class 100. The Nanofab design specifications stipulated class 100 for litho, class 1000 for everything else. The Nanofab is easily meeting these specs.
#The effectiveness of facemasks was investigated by placing the particle counter directly under a person’s neck while the person moved his head back and forth. Facemasks reduced particle counts, from the equivalent of class 500 without masks to class 100 with masks. Again, this was sampling just below the neck, not at typical substrate surfaces. If you need to inspect your parts very close to your face for any reason, you should consider using a face mask. There are two types of facemasks provided in the gowning room. Please choose the appropriate mask for your requirements.
#The choice of wipes used in the Nanofab has a more pronounced effect on particle counts. In general, wipes trade absorbency for low particle generation. The Spec-Wipe 3 is the stocked polyester/cellulose blend, high absorbency wipe designed for use in class 100 cleanrooms. Dragging the sampling tube across the surface of a Spec-Wipe 3 resulted in a class 1000 level particle counts. The Berkshire Polx 1200 wipe is the stocked low particle count, 100% knit polyester wipe. This wipe is far less absorbent than the Spec-Wipe 3, but generates fewer particles. Dragging the sampling tube across the surface of a Berkshire Polx 1200 wipe resulted in lower than class 100 level particle counts. The main point to note is that abrasion of fabric surfaces results in higher particle counts. When processing, try not to scrape the wipes while handling your parts.[[File:Lab Rules - 1.14.2 face masks.png|thumb|129x129px]]

===Procedure for the Use and Handling of Precious Metals===

#All precious metals (as well as other materials paid for by the Nanofab) are the property of the Nanofab. They are not to be used for any other purpose than for use within Nanofab systems. The materials must remain in the Nanofab at all times.
#Gold, platinum, palladium, and various alloys of these metals are stocked by the UCSB Nanofab and are provided for in the hourly recharge fee. Each research group can be issued a precious metal supply. You should check with your group first before contacting the Nanofab. Please contact the Nanofab Director for precious metals, thibeault@ece.ucsb.edu.[[File:Lab Rules - 1.15.2 metals lock box.png|thumb|121x121px]]
#This supply must be stored in a small lockable container, along with a log sheet for recording the use of these metals. Precious metals, the lockable security container, and log sheets will be issued by the Nanofab manager. All use of precious metals must be accurately recorded on the log sheet, and include user name, date, metal type, metal weight before use, and metal weight after use. '''Any discrepancies, such as over use or loss of the precious metals will be invoiced to the responsible group/company. Loss of a precious metal lock box will be reported to the local UCSB police and will elevate the issue as this is may constitute theft.''' Please make sure you are careful with your metal supply as you would be with your own money. [[File:Lab Rules - 1.15.4 metals weighing scale.png|thumb|151x151px]]
#Every group is responsible for keeping their supply of precious metals up to date and full. But since all users are sharing the same lab supply of provided metals it is fine to share metals between groups if there are extenuating circumstances that prevented a group from having sufficient precious metal supply. It must be correctly noted in the other group’s log sheets that metal was used.
#Multiple digital scales have been acquired and placed throughout the Nanofab to facilitate weighing of these metals. When requesting additional precious metals, the completed log sheet must be presented to the Nanofab manager. Any discrepancies or loss in recorded precious metal use will result in charges to the principle investigator/company corresponding to the value of the precious metal missing.
#Any loose precious metal lock boxes left out or any loose unmarked precious metals found in the lab either in a plastic bags, tins or individually laying on the floor should be returned to the lab manager for reclaim.

==== '''Procedure to request more metals:''' ====
# email [mailto:nanofab-metal-refill@ece.ucsb.edu nanofab-metal-refill@ece.ucsb.edu], with the following info:
# Your group name (labelled on your lockbox)
# What metals you need refilled
# The code to your lockbox
# And leave the lockbox in the labeled blue bin located on the wire rack in the gowning room entryway.
# You will be notified by email when the metal has been replenished and your box has been returned to the blue bin.

===Surveillance Cameras===
[[File:Lab Rules - 1.16 surveillance camera.png|thumb]]
Human and equipment safety is very important in the Nanofab. The Nanofab uses a full facility 24-hour camera recording system to improve safety within the laboratory. Up to 14 days of footage is recorded on 20 cameras. This recorded footage is regularly checked at various locations for safety violations. The footage may also used when violations of safety and policy are reported by users. Users observed to be violating policies on the recordings will be contacted by the management for further discussions.

=='''Facility Equipment Policies'''==

===Getting Trained on Equipment===
The systems in the nanofabrication facility require operational training before authorization. Please contact tool owners for training as indicated on signupmonkey (described later) or on the lab wiki. All training is scheduled on an as-needed basis. During training on a piece of equipment, users should take notes and pay attention to all instructions given. Many systems have basic operating procedures to remind you of operation, but may not contain all of the information you need to successfully operate the system. Users are responsible for following written and oral instructions for the equipment. The tool pages of the laboratory wiki should also contain procedures that you can refer to ([[Tool List]]). If you are unsure about any aspect of operation of a system after training, please ask the engineer or senior users of the equipment for assistance. Please do not be embarrassed to ask for more details about training. It is much more important to understand the systems as we want to prevent failures. Some operation failures will prevent many users from being able to finish their work, take systems down for extended periods, and cost the lab money for repairing the damage to the tool. Occasionally we will need to share the cost of the repair with the group/company that damaged the system, if pure negligence is determined as the cause.

===Machine sign-up and use===
Most systems require web-based sign-up. (<nowiki>http://signupmonkey.ece.ucsb.edu,see</nowiki> below) for reservations.

#You must be trained and authorized before you can sign-up and use a facility system.
#There is a 15 minute grace period for you to use your time slot or someone else is allowed to use the system. If you don’t show for your time slot then any user can take all of your consecutive time slots not just that specific slot. It is the registered user's responsibility to make sure there is a note at the tool if they will show up later than 15 minutes before the beginning of their time slot in order to prevent another user from taking the reservation times for themselves on the system.
#If you show up to a system and the scheduled user is not there, but you want to use the system, you need to first attempt to contact the user. Phone numbers and emails are accessible on signupmonkey. You should also look around the lab to see if the person is present as they may be doing something like etch/characterization cycles that require them to step away from the system for short times. Only after making reasonable effort to contact the user may you take the slots at the 15-minute mark after the start of the reservation. If you take the time slots, please press the "Did Not Show" button on the appropriate time slot in the signup system.
#Schedule enough time for all procedures you need to perform so that you will not encroach on the next user’s time slot. This includes all pre-and post-cleaning of the tools, where applicable. '''This is every user’s responsibility and will result in suspensions if you abuse the system.''' The next user is not responsible for your scheduling issues. Do not take “extra” slots to buffer around your schedule, instead give yourself adequate time between process steps to accommodate difficulties. The Nanofab staff tracks and resolves non-shows and users that abuse the system.
#It is mandatory to fill in the appropriate information in the log books for each piece of equipment in the lab. This is often the only record of actual use and is necessary for any troubleshooting of equipment issues. '''Willful non-compliance or repeated failures will result in suspensions.'''

==='''Machine error response and reporting issues'''===
[[File:Lab Rules - 2.3 equipment maintaner contact sign.png|thumb|178x178px]]
To report a system issue, go to the signup system and press the “'''Report Tool Issue'''” button. This will send emails to the users and text messages to the tool supervisors. After pressing this button, you may directly contact the responsible engineer. Contact information for each responsible staff engineer is found directly above the tool, on signupmonkey, or on the wiki page. There is also a general mail list, nanofab@ece.ucsb.edu to all cleanroom staff for general questions or problems and for reporting issues with systems not on signupmonkey. The staff engineer will give training and post procedures for tool operation. Without proper training or posted procedures, users may not clear out errors or try undocumented procedures to get samples out of machines. They must contact the responsible engineer for assistance. All errors and issues must be entered in the tool log books.

#All issues, whether or not they are your fault, need to be promptly reported to the system engineer. Mistakes are tolerated and may result in required retraining, but '''hiding mistakes is immediate grounds for lab suspension.'''
#'''System Alarms''': If a system alarms, use the “'''Report Tool Issue'''” button on the signupmonkey, then the responsible engineer should be contacted for assistance, either by cell phone if at a reasonable time or by email. Do not attempt to fix the problem unless you have training from the responsible engineer. Sometimes after normal staff working hours machines will be down until the next working day. Please note in the log books that there is a problem with the tool and that the staff has been contacted.
#'''Software problems:''' Unless written directions are given at the system or training given by the responsible engineer, follow the same procedure as a system alarm regarding software problems. Do not restart the computer unless instructed to do so.
#Please always use the “'''Report Tool Issue'''” button in signupmonkey to report the issue so that the nanofab staff and subsequent users will be made aware of the issue. Then directly contact the tool engineer. For tools not on signupmonkey, send email to [[Mailto:nanofab@ece.ucsb.edu|nanofab@ece.ucsb.edu]] to report problems in case the tool engineer cannot be reached quickly.

===Equipment Maintenance===
All equipment is maintained by the professional staff. Users are not allowed to remove panels or alter subsystems within the machine unless directed to by staff. Significant electrical dangers including high voltage and high power RF exist within the panels of most machines.

===Preventative Maintenance===
This is done regularly on most tools to “reset” the tool to acceptable performance levels. If you believe a tool is not performing properly, please contact the responsible engineer and process support staff to discuss the problem.

===Hotplate use===
We have many hot plates in the facility used for a variety of applications.

#Hot plates used for heating chemicals must be attended. This means you must be in the Nanofab and monitoring the hot plate whenever it is in use. This does not apply to PR baking hotplates that are built in to the PR spinner benches or to hotplates in the solvent benches used for heating photoresist strippers. [[File:Lab Rules - 2.6.1 spinner bench hotplates.png|thumb|195x195px]]
#The nine built-in PR baking hotplates are preset at certain temperatures. They should not be changed unless you are directed by Nanofab staff. There are other freestanding hotplates to be used for custom temperatures. Please contact staff if you have any questions.
#Every group/company should have a temperature measuring device (thermometer, thermocouple or bi-metal sensor) to check hotplate temperatures. We check and calibrate the built-in, lift-pin, and the large wafer round hotplates weekly. But hotplates can fail or users may wrongly change standard temperatures so every user is accountable for verifying hotplate temperature before use. Please contact staff, hopkins@ece.ucsb.eduor day@ece.ucsb.eduwhen hotplates have failed or are out of specifications.
#The hotplates cannot be reserved. Please be conscientious about your hotplate use. Everyone needs to use them often so if you have a unique process that requires long baking or heating, contact Nanofab staff for a long term solution.
#All heated beaker chemistry must be covered by a watch glass or some type of cover (foil or custom cover). You can cut handles of wafer/piece carriers to be below the beaker cover or notch them to have a handle protrude thru the cover. '''There are no exceptions to this rule.'''
#Heated chemicals are more reactive and hot plates should be kept towards the back of the benches to minimize the possibility of being knocked over accidently and to minimize the possibility of exposure if a beaker breaks/cracks or is spilled while heated.
#Please leave hotplates in a clean condition. Do not contaminate the hotplate surface with solders, resists, low melting point metals or any other material that would jeopardize other user’s materials. It is every user’s responsibility to clean or check hotplates before and after use for any issues. A few extra minutes of cleaning up after ourselves makes the lab a better place for everyone to work.

=='''Visual and Audible Alarms in the Nanofab'''==

==='''Fire Alarm'''===
[[File:Lab Rules - 3.1 fire and gas alarms.png|thumb|281x281px]]
A fire alarm is indicated by a white strobe light on red boxes marked fire and sound off with a high volume audible alarm. These are located throughout the Nanofab. If this alarm activates, immediately leave the Nanofab through the nearest exit and proceed to exit the building. Do not take care of your samples, do not keep working in any way, and do not remove your bunnysuit until you are outside the building.

==='''Toxic Gas Alarm'''===
A toxic/flammable gas alarm is indicated by blue strobe lights on gray boxes and sound off with a high volume audible alarm. These are located at both ends of each bay. There are two levels for this alarm, the Single Bay Toxic Alarm (low-level) and the All Bays Toxic Alarm (high-level), which are set based on health and explosion limits of the particular gases being detected. The detection satellites for these gases are located in various locations in the vicinity of the equipment that use these gases

==='''Single Bay Toxic Alarm'''===
For a Single Bay Toxic Alarm, the blue strobe and audible alarm will only be active in one bay. Under these conditions, users may not remain in or enter that bay until the staff have isolated the issue and allow users back in the bay. Users may continue to use the rest of the Nanofab.

==='''All Bays Toxic Alarm'''===
For an All Bays Toxic Alarm a high level of dangerous gas has been detected. All blue strobes and audible alarms will be active in all bays. When this occurs, all users are to immediately leave the laboratory, and then the building, through the closest exits. Do not take care of your samples, do not keep working in any way, and do not remove your bunnysuit until you are outside the building.

==='''Wet Bench Alarms'''===
[[File:Lab Rules - 3.3 wet bench overhead controls.png|thumb|243x243px]]
Small illuminated visual alarms with buzzers. Each wet bench may have multiple labeled alarms. You must follow proper response if you see or hear a wet bench alarm.

====Pump Lift station alarm====
If the pump lift station alarm is activated all water will be shut off to the bench. Contact Nanofab staff.

====Exhaust Alarm====
If the lighted/audible red exhaust alarm indicator located on the upper bench panel is activated then you must leave the bench area. The bench is no longer safe to work at due to low exhaust levels. If all bench exhaust alarms are activated then you must leave the Nanofab. This condition usually indicates one or more of the lab exhaust fans has failed. This will make the entire lab un-safe for occupancy. De-gown as you would normally while exiting the Nanofab. Contact Nanofab staff.

===Equipment Alarms===
Please notify supervisor of tool if equipment alarm is activated using phone, personal email, or nanofabstaff@ece.ucsb.edu.

===Re-entering the lab after evacuation===
Users may re-enter the facility after an evacuation condition only after the laboratory facility manager has authorized re-entry. No exceptions.

=='''Emergencies and First Aid'''==

==='''Personal Injury – Chemical'''===
'''If you have been exposed to a toxic substance or gas, if appropriate rinse in one of the emergency showers for a minimum 15 minutes.'''

'''In all cases, quickly get to the emergency room at Goleta Valley Hospital located at 351 South Patterson, Santa Barbara.'''
[[File:Lab Rules - 4.1 map to cottage hospital.png|none|thumb|489x489px]]

==='''Emergency Showers/Eye Wash'''===
[[File:Lab Rules - 4.2 eye wash and shower.png|thumb]]
Emergency showers and eye wash stations are located at the south end of all bays. An enclosed emergency shower is located in Bay 5 beside the wet etch benches. There is a clean Nanofab gown in the shower and tubes of calcium gluconate for any HF exposure. A first aid kit is located in the gowning room, and on the south wall (towards

the windows) at the end of bays 2, 4, and 6.

==='''AED (automated external defibrillator)'''===
[[File:Lab Rules - 4.3 AED.png|thumb]]
There is an AED (automated external defibrillator) in the gowning room next to the entry door. It is a portable electronic device that automatically diagnoses the potentially life threatening cardiac arrhythmias of ventricular fibrillation and ventricular tachycardiain apatient and is able to treat them through defibrillation, the application of electrical therapy which stops the arrhythmia, allowing the heart to reestablish an effective rhythm. This type of heart condition is commonly caused by electrical shock. The gowning room also has a CPR kit, first aid kit and ear plugs by the entry door.

==='''Chemical Spills'''===
[[File:Lab Rules - 4.4 supplies rack chemical spill cleanup.png|thumb]]
'''If unsure, Always assume a liquid on the floor could be a hazardous chemical. Always verify the pH of an unknown floor spill with the pH strips stocked on the wire racks in bays containing wet chemistry.'''

For small spills, use the appropriate chemical spill clean-up kit, yellow hazardous bag and EH&S tags, place bag into chemical waste storage cabinet located in service chase 5. Chemical spill clean-up kits and yellow hazardous bags are located on the wire shelving in each bay containing a wet bench. After using a spill cleanup kit, please inform the Nanofab staff. For large spills, immediately contact the Nanofab staff and evacuate people from the area. If off hours, please remain at Nanofab entrance until on call staff arrive and prevent users from entering the Nanofab

==='''Lab Fire'''===
[[File:Lab Rules - 4.5 fire extinguisher.png|thumb]]
In the case that a lab fire arises at any bench or piece of equipment, immediately hit the Emergency Power Off (EPO) button for the bench/equipment. You may then grab a fire extinguisher and put out the small fire. Halotron fire extinguishers are located on the south end of each clean bay, and the north end of each maintenance chase. Halotron is rated as an ABC extinguisher. It is used on electronic equipment because it leaves no residue. You are not required to extinguish a fire, but if you are confident and have been trained in the use of a fire extinguisher, then it is a subjective decision to fight a small fire. If in doubt, hit the emergency off for the affected bench or equipment, immediately pull fire alarm and exit building. Please review the first floor Nanofab/Engineering Science Building evacuation map below.

==='''For emergencies after hours'''===
[[File:Lab Rules - 4.6 after hours contact sign.png|thumb]]
Contact the Nanofab cell phone ('''[[Tel:805-451-0509|805-451-0509]]''') for non-injury producing events, but not for simple equipment failures or issues. The cell phone number is also posted under the clocks at the end of each Bay. You can dial 911 from you cell phone or dial 9-911 from all Nanofab phones for life threatening emergencies. The campus phone will connect you directly to UCSB Police Dispatch. Remember, dialing 911 on your personal cell phone connects you to a county dispatch and not a campus dispatch so you will need to give them location information. The campus dispatch will know by the campus phone number where you are located on campus.

==='''UCSB NanoFab Exit Map'''===
[[File:Lab Rules - 4.7 exit map.png|1260x1260px]]

=='''HF/TMAH exposure'''==

===HF Exposure to Skin===

#[[File:Lab Rules - 5.1.1 HF exposure response calgonate.png|thumb]]Immediately rinse exposed area for 15 minutes in safety shower, flush affected area thoroughly. Speed and thoroughness in washing off the acid is of primary importance. An enclosed emergency shower is located in bay 5 across from the HF wet etch bench. Remember, do not touch the exposed area with your bare hands.
#Immediately after rinsing, start massaging 2.5% calcium gluconate gel into the affected. The individual applying the gel should wear gloves. Apply gel frequently and massage continuously. Calcium gluconate gel is located to the left of the HF bench in a pocket mounted to the side of the bench and at the shower stall in Bay 5.
#Take the victim to Goleta Valley Cottage Hospital emergency room. Call 9-911 from Nanofab phones for transport by ambulance if necessary.
#Continue rubbing gel on affected area until advised otherwise by physician.

===HF Exposure to Eyes===

#Immediately rinse exposed area for 15 minutes at eye wash station. Hold eyelids open during irrigation to allow thorough flushing of the eyes. Water will spill onto floor of Nanofab - this is OK.
#Take victim to Goleta Valley Cottage Hospital emergency room. Call 9- 911 from Nanofab phones for transport by ambulance if necessary.

==='''TetraMethyl Ammonium Hydroxide (TMAH) Exposure'''===
TMAH is a component in several photoresist developers and strippers, and is also used in the Nanofab as an ebeam resist developer and silicon etchant. The concentration of TMAH in photoresist developer and stripper solutions is relatively low (2-4%). However, the HSQ ebeam resist developer and silicon etchant utilize a solution of 25% TMAH.

====TMAH Exposure to Skin, 25% Concentration====
Immediately rinse exposed area for at least 15 minutes in safety shower, flush affected area thoroughly. An enclosed emergency showers is located in bay 5 across from the HF/TMAH wet etch bench. If using the emergency shower at the end of the bay, water will spill onto floor of Nanofab - this is OK.

#Seek immediate medical attention by calling 9-911 from Nanofab phones.

====TMAH Exposure to Skin, 2%-4%Concentration====

#If small area skin exposure (<1% body surface area, <approximately 25 inches2) to 2-4% TMAH, immediately rinse exposed area until skin feels normal (not greasy). If irritation occurs, consult a physician.
#If medium to large area skin exposure (>1% body surface area, >approximately 25 inches2) to 2-4% TMAH, immediately rinse exposed area for at least 15 minutes in safety shower, flush affected area thoroughly. An enclosed emergency shower is located in bay 5 across from the HF/TMAH wet bench. If using the emergency shower at the end of the bay, water will spill onto floor of Nanofab - this is OK. Seek immediate medical attention by calling 9-911 from Nanofab phones or using your cell phone to dial 911.

====TMAH Exposure to Eyes, Any Concentration====

#Immediately rinse exposed area for at least 15 minutes at eye wash station. Hold eyelids open during irrigation to allow thorough flushing of the eyes. Water will spill onto floor of Nanofab - this is OK.
#Seek immediate medical attention by calling 9-911 from Nanofab phones or using your cell phone to dial 911

==Pregnancy and the Nanofab==
The effects on a fetus of many of the chemicals utilized in the Nanofab is unknown. The Nanofab is designed to prevent exposure to the fumes and vapors from these chemicals, but absolute 100% containment is impossible, and it is possible to be exposed to extremely small concentrations of these materials. Consequently, we strongly recommend that you do not work in the Nanofab if you know or suspect that you are pregnant.

==Chemicals in the Nanofab==

===General Information and the SDS (or MSDS)===
[[File:Lab Rules - 7.1 MSDS binders.png|thumb]]
All chemicals, compounds, gases, materials for evaporation, etc., must be approved by the Nanofab manager before introduction into the facility. In order to introduce a new material into the Nanofab, a SDS (Safety Data Sheet) for the material in .pdf format must be submitted to the Nanofab manager, along with any anticipated processes involving the new material. The SDS contains safety information regarding exposure, first aid, handling, storage, fire hazard, other chemical incompatibilities, etc., for all chemicals, gases, and materials present in the facility. Before using an unfamiliar material, consult the SDS to determine any potential hazards. Consult the SDS to determine the proper course of action if someone has been exposed to a gas or chemical, or a spill has occurred. Binders containing the SDS for any material used in the Nanofab is located just inside the gowning room. Additionally, an electronic version of the (M)SDS in .pdf format for all chemicals in our inventory is located on our wiki page. Quick google searches on internet connected devices can also bring up SDS’s rather quickly.

All users are expected to read and understand the SDS (Safety Data Sheets) for all chemicals they use in the facility, even if the usage or process has been passed down from previous group members. Users that understand the dangers and incompatibilities of the chemicals they work with are safer users. Users should also understand how to mix chemicals properly to avoid potential exothermic reactions. It is the responsibility of the user and their PI to make sure chemicals are mixed and used in a safe manner and that proper PPE is worn for the chemicals being used. Users may contact the facility management for guidance if unsure of proper chemical use and handling for given chemicals.

===Containers and Labeling===

#Chemical containers such as beakers, bottles, etc., must be labeled with '''contents, date, and ownership (individual or group name)'''. This information can be written on a wipe under the container. '''Noncompliance of this policy can result in lab suspension.'''
##'''ALL Containers''' containing any liquids must be '''labelled''' at '''ALL TIMES, even if you are standing next to the container. No exceptions.'''
##A beaker in use on a solvent bench can contain acetone, propanol, or methanol if the beaker is labeled with the text: “acetone/propanol/methanol”. The generic label “solvent” is insufficient. Beakers containing solvents other that acetone, propanol, or methanol must be labeled with the specific solvent.
##Beakers in use at lithography developer benches must be labeled with exact contents and ownership (individual or group name). The generic label “developer” is insufficient.
##“Acid” or “Base” is insufficient as a label. You must have the chemical name. Common names of user-mixed chemical mixtures such as “Aqua-Regia”, “RCA-2”, “Piranha” are also insufficient. Mixtures must be properly labeled such as “Sulfuric Acid: Hydrogen Peroxide” or “Hydrochloric Acid: Nitric Acid” when mixed by users. Premixed chemicals poured from manufacturer bottles may be labeled as on the bottle. “Gold-Etchant – Type TFA” or “Al-Etchant Type D”, or “Nanostrip” etc. are acceptable for chemical designation.

====Chemical compatibility with containers====

#Most chemicals are compatible with glass (Pyrex, fused silicas, or quartz) containers. Compatibility with various forms of plastic are determined on a case by case basis using chemical compatibility charts available on various websites.
#HF: Glass beakers are not compatible with HF containing acids. Use PTFE, Nalgene, or other forms of Teflon-like materials.

====Transporting Chemicals from bench to bench====

#Users may not transport open containers of chemicals from bench to bench. This is an unsafe practice and there are no exceptions, including water.
#In order to transfer containers with chemicals from bench to bench when there is not another alternative, you may do the following:
##Get a large HDPE sealable plastic tub and place it in the bench.
##Place your beaker (or other open container) in the tub
##Put lid on and snap shut the lid so that it is secure.
##Transport the enclosed bin to the other bench.
##Place in hood, open lid, remove chemical, place empty bin under the bench.
##Use the same procedure for transporting large water beakers to the etchers (for water soaks after etch) and back to the benches for draining.

===Chemical Storage===
If you are approved to bring in a new material, the lab manager will instruct you to where you are allowed to use the chemistry and to store your material. You are not allowed to store any chemicals in your personal blue bins. All chemicals must be stored in approved locations. The general rules are as follows:

====Using Chemicals====
Common sense dictates that you select the opened bottle of any necessary chemistry first that you need to use. This will minimize waste and possible contamination of the stored chemistry.
[[File:Lab Rules - 7.3 acid cabinet.png|right|132x132px]]

====Acid Storage====
[[File:Lab Rules - 7.3.2 base cabinet.png|right|137x137px]]
The primary acid storage area (except HF) is the located next to the acid wet processing benches in bay 5. HF acid is stored in the HF cabinet in Bay 5. Some materials are placed in bins (or on particular shelves) within the cabinet to keep any spill physically separated from other incompatible, but acidic, materials that may also be stored in the same cabinet. Users must store the acids in the proper designated places as directed by the staff.

====Base Storage====
The primary base storage area is the base cabinet located next to the acid wet processing bench in Bay 5. Some materials are placed in bins (or on particular shelves) within the cabinet to keep any spill physically separated from other incompatible, but caustic, materials that may also be stored in the same cabinet. Users must store the bases in the proper designated places as directed by the staff.
[[File:Lab Rules - 7.3.4 Solvent + PR storage.png|alt=Solvent and Photoresist Storage|thumb|261x261px|Solvent and Photoresist Storage]]

====Solvent Storage====
The primary solvent storage area is the stainless steel flammables cabinet in Bay 6. You may store small amounts of solvents in labeled containers on the shelves in the photolith area. Other unique solvents should be stored in the User Solvent cabinet in service chase 6. If too many small user bottles are being stored on shelves in the benches, the staff may announce a cleanup and “reset” the benches as a means of keeping the benches in order.

====Photoresist Storage====
Photoresist can contain many solvents and aromatics that are potentially toxic. Special care must be exercised when handling these materials. All photoresist fumes must be exhausted or otherwise contained through careful procedures at the photolith wet benches. The primary photoresist storage area is the lab refrigerator located in Bay 6. The few resists that do not need refrigeration are stored in the spinner benches on the back shelf (PMGI, PMMA, etc.).

=====Transfer to Small(Personal) Bottles=====
Small brown bottles of various sizes are provided to you on the wire racks. Transfer resist from the main bottle to your small bottle while the resist is cold. Do not let the main resist bottle warm up. You do not need to worry about condensation when transferring resist from the cold bottle to your container as we have set the refrigerator temp to be above the normal dew point (~10C) for the Nanofab. If you see any condensation forming on the bottles please inform the Nanofab staff. Large transfer pipettes are provided for transferring PR from the main bottle to your in-use bottle. To prevent PR flakes from contaminating the main bottle, please inspect the main bottle cap and bottle threads for PR, and remove any PR with EBR and a wipe before replacing cap. After transfer, place main bottle back in the refrigerator.
[[File:Lab Rules - 7.3.5.2 PR Cabinet.png|thumb]]

=====Small (Personal) Bottle Storage=====
You may store your in-use, fully labeled PR bottle in the stainless steel PR storage cabinet in a bin labeled with your research group name (shown). Disposable droppers, syringes, and filters are provided for the application of photoresist on your substrate. You may store photoresist in the PR storage cabinet for a maximum of 12 months. Nanofab staff will remove in-use PR bottles older than 12 months, and will also remove any bottle not correctly labeled with contents, date, and ownership.

====Materials needing refrigeration====
[[File:Lab Rules - 7.3.6 refrigerators.png|thumb|191x191px]]
There are two refrigerators in the Nanofab for resist/chemical storage. The main refrigerator in Bay 6 is set at ~10C and most of the resists are stored. There is a small freezer in service chase 5 that is set at -20C for lower temp storage needs.

===Solvent Processing===
'''Solvents with flashpoints below 55C° cannot be heated in the Nanofab.''' This includes acetone, methanol, isopropanol, ethanol, and toluene. All solvent processing is limited to the stainless steel solvent processing benches. Do not perform standard solvent processing at the photoresist spinner benches. The only solvent allowed at the PR spinner benches is EBR100 (PGMEA). '''Do not cover the holes on the fronts of the benches with wipes as this will disrupt the exhaust resulting in fumes escaping the bench.'''

===Acid/Base and HF/TMAH/Bromine Processing===
You may not deviate from these policies unless you have prior approval by the Nanofab manager.

#All wet processing involving acids and bases ('''except HF or any mixture including HF, Bromine, TMAH >5%, and developers''') is limited to the acid/base benches. Do not bring acids/bases to the solvent stainless-steel benches.
#All HF, TMAH >5%, and Bromine-based processing is limited to the two HF/TMAH wet benches in bay 5 and wet bench in bay 4 - NO EXCEPTIONS. Store all HF, TMAH >5%, and bromine in labeled containers in the HF acid/bromine storage cabinet. Please keep open containers of these toxic chemicals away from the edge of the bench. Waste solutions containing HF and TMAH are poured down the drain, and treated in the Nanofab acid treatment system. Empty HF and concentrated TMAH bottles should be returned to the HF acid storage cabinet.[[File:Lab Rules - 7.5.3 acid benches PPE.png|thumb|194x194px]]
#Personal Protective Equipment: When working at any HF/TMAH bench (bay 4 and bay 5) always wear:
##'''fully-sleeved chemical apron,'''
##'''face shield, and'''
##'''“TRIonic E-194” (Nitrile/Neoprene/Latex Blend) thicker gloves.'''
#When working with other acids/bases at the benches, use appropriate PPE based on the materials being used by you or others at the bench. Full gowning and face-shields are recommended for heated or high concentration acid processing, especially piranha.
#Always keep your face above the sash as much as possible to minimize exposure to the head in case of an accident. '''Do not cover the holes on the fronts of the benches''' with wipes as this will disrupt the exhaust resulting in fumes escaping the bench.
#'''Do not use wipes in the sinks'''. Wipes cause many issues in the sinks. They are not needed in the sinks. Do not leave broken glass in the sink. If glassware is broken in the sink, the nanofab staff can assist in cleanup. Do not ignore a clogged sink. If a drain is clogged, promptly report this to the nanofab staff using the nanofab@ece.ucsb.eduemail address.

===Photoresist Coating or Spinning===

#Standard solvent-based photoresist spinning should be performed at the PR spinner benches. Some lithography chemicals utilize non-standard chemicals in place of solvents, which may require spinning at a different bench. If using non-standard lithography chemicals, please provide the (M)SDS and process instructions to the Nanofab manager for direction in this matter. Spin-coaters have standard recipes 2-9 programmed into all units. '''Do not change these recipes'''. Recipes 0 and 1 can be changed at will for user-defined spincoat processes. A variety of spin-coating chucks are provided by the facility. Use a chuck appropriate for the sample size you are using. Make sure chuck surfaces are clean when done. Do not remove the O-ring from the chuck. If you need a specialized chuck, please discuss with the Nanofab staff. Unless you purchased the chuck separately for your research group, '''all chucks are the property of the Nanofab and may not be taken and placed in your box for your own personal use. Non-compliance of this policy can result in lab suspension.'''[[File:Lab Rules - 7.6.2 spin bowl liners on racks.png|thumb]]
#Spin Bowl Liners: Use two large orange backed wipes to line the bowl before spinning resist. Place them at 45 degrees relative to each other so that wipes cover the maximum amount of bowl area. If the wipe is saturated with resist, remove the top wipe and place in the beaker at the back of the bench after you are done with your coating process. NEVER place/dispose of the spin bowl liners or any other resist coated material into the regular trash or other non-exhausted area.
#Adhesion Promoters: HMDS is commonly used as an adhesion promoter. Samples can be soaked in HMDS on the spinner chuck and then spun dry. Residual HMDS vapor can interact with resist and inhibit development, so it is recommended to either replace the wipe in the bowl after HMDS or to use the nitrogen gun to dry residuals from the liner wipes before spin coating the resist.

===Developer Benches===

#Developer benches are used for developing photoresists only using Hydroxide-based developers such as AZ400K or MIF developers. In general, solvents are not allowed at the developer benches because solvent fumes adversely affect the develop process. Solvent based liftoff processes are not allowed at the developer benches. E-beam lithography development processes that utilize solvents such as MIBK and IPA should be performed at the solvent benches in the photolith area. If you are unsure of where you should develop wafers, contact the lab management.

===Cyanide-based processing===
'''All compounds containing cyanide needs to be approved for use by the lab management. These materials are typically used only at the stainless steel solvent bench in Bay 5, where no acids are allowed. Never bring cyanide-based compounds to the acid bench. All waste is collected and stored in a designated cabinet. A procedure for use will be determined by the lab manager upon each request.'''

===Photoresist Handling, and Waste===
[[File:Lab Rules - 7.9 PR spinner.png|thumb|149x149px]]
Photoresist can contain many solvents and aromatics that are potentially toxic. Special care must be exercised when handling these materials. All photoresist fumes must be exhausted or otherwise contained through careful procedures at the photolith wet benches. Disposable droppers, syringes, and filters are provided for the application of photoresist on your substrate. Nanofab wipes and pipettes contaminated with PR must be placed in the provided beaker containers at the back of the spinner benches. Do not place PR contaminated materials in the trashcans, as this will allow photoresist fumes to migrate throughout the photolith area. Dispose of waste photoresist bottles by placing your labeled bottle in the yellow solvent waste cabinet at the North end of chase 5.

===Photoresist Strippers===
Use of heated photoresist strippers (such as NMP) is limited to the stainless steel solvent benches. It is recommended you use the heated water bath to heat your stripper to 80 C. If you choose to use a hot plate to heat commercial photoresist strippers, you may use a maximum hot plate temperature 80 C, even though the liquid will not reach the plate temperature. You may place a small amount of water under your glass container to facilitate heat transfer. Again, you may never use a hot plate above 80C at any time while heating PR strippers in the Nanofab.

===Powders and Nanoparticles===
Nanoparticles and powders present unique challenges. In general, all nanoparticles and powders must be in solution before bringing into the nanofab. Any user needing to use nanoparticles or powders must discuss this with the operational director before using in the facility. (M)SDS sheets for bulk materials are not sufficient regarding the dangers of nanoparticles of the same material type.

===Chemical Waste Disposal===
[[File:Lab Rules - 7.12.1 chemical storage-disposal sheet.png|thumb]]

====General Guidelines====

#The correct method of disposal for any chemical waste in our inventory is posted throughout the Nanofab on the sides of the benches.
#'''DO NOT DISPOSE OF''' '''SOLVENTS IN THE ACID DRAIN,''' '''OR''' '''ACIDS AND BASES IN THE SOLVENT DRAINS''' '''DUE TO''' '''POSSIBLE EXPLOSION OR THE CREATION OF OTHER HAZARDOUS SITUATIONS.''' If you are unsure about any chemical disposal procedure, please contact the nanofab staff to discuss.

====Methods of Chemical Disposal====
All chemical waste is disposed of in one of three methods:

=====Acid drains=====
[[File:Lab Rules - 7.12.2.1 developer drain and lift station.png|thumb]]
Most (but not all) water-based chemicals use this method. All liquid waste from the plastic benches is collected in pump lift stations behind the benches in the service chases. These lift stations pump the waste chemicals overhead to an acid waste neutralization (AWN) system located outside of the Nanofab in the mechanical room where the chemical waste is treated for pH and then drained to the sewer. This is the primary drain in the Nanofab. All liquids entering the sink drain at any polypropylene wet bench in the Nanofab run through this treatment system. To dispose of an acid or base, pour the liquid down the drain, rinse and drain glassware 3 times, use the sprayer to dilute the mixture in the sink while draining, and use the plenum flush to help dilute/rinse the chemical into the lift stations (especially for concentrated acid mixtures). There are also venturi aspirators at the

back of all acid/base benches to pump the chemistry from larger beakers so that you do not have to pick them up and pour them in to the sinks. When using this technique, always use the plenum flush and rinse your beakers when done. '''Do not pour the liquid thru the perforated tops'''. If you spill an acid or base onto the top surface of a bench, first rinse the surface thoroughly with water using the DI sprayers, then turn on the plenum flush to rinse the bench drain. '''Do not pour solvents down the acid drain'''.

=====Solvent dumps=====
[[File:Lab Rules - 7.12.2.2 solvent drain and lift station.png|thumb]]
Waste solvents are poured into the solvent dumps at the back of each solvent bench. Most (but not all) solvent waste uses this method. '''Do not pour the liquid thru the perforated tops.Do not pour waste over the POLOS spinners'''. The solvent drain waste is collected in a pump lift station in the service chases. The lift stations pump when full to a storage tank located in the Nanofab mechanical room. The waste solvents are transported to the EH&S chemical waste processing facility and are properly disposed. '''Do not use acids or bases at the solvent benches'''.

=====Collection of chemical waste=====
Some chemicals require collection according to state regulations. When this is the case, always fill out the Environmental Health and Safety waste disposal tags that are provided at the waste cabinet in service chase 5. Fill out each tag with the appropriate information when disposing of collected chemical waste. EH&S will only remove properly labeled waste bags and containers. Nanofab staff can assist with this process.

====Disposing of Empty Acid, Base, and Solvent Bottles====
All chemical storage cabinets have a shelf labeled for empty containers. Place empty containers in the respective cabinet. Do not rinse any empty chemical containers. Nanofab staff will collect all empty bottles from the cabinets and properly rinse and dispose into the trash.

==Nanofab Apparel and Gloves==

===Bunnysuits and Booties===

#You must wear a full bunnysuit to enter the Nanofab (hood, gown, shoe covers). Facial covers are optional. Change bunnysuits weekly if used often, or at least once a month if used sporadically. There is a laundry window by the glove rack where all dirty cleanroom gowns, hoods and booties should be placed.
#Sandals or any other open toed shoes are not allowed in the Nanofab at any time. The only protection to your feet are provided by the closed toe shoes you are wearing under the booties. Shorts are allowed under bunny suits, but long pants are better.[[File:Lab Rules - 6.1.3 hangar reservation sheet.png|thumb]]
#Store gowns and hoods on the numbered hangers in the gowning room. Store booties in the corresponding numbered slot in the bootie storage rack. '''You must then clearly write your name on the hanger reservation'''list posted on the wall where the safety glasses are stored in the gowning room. Please follow these simple instructions. Gown use and laundering directly affects your recharge rates. Abuse of this system is a sad waste of money on facility cost than research investment. '''Failure to comply with this policy will result in your gown being removed and possible suspension from the lab'''.

===Eye Protection===
ANSI-approved eye protection must be worn at all times in the Nanofab, except when using optical microscopes. All eye protection eyewear must be ANSI-approved, as indicated by the “Z87” stamp required on the eyewear. You are welcome to use personal prescription safety eyewear which is ANSI-approved. Three types of safety eyewear are stocked in the Nanofab:

#Safety glasses used by people who do not wear vision correction glasses.
#Safety glasses used for use by people who do wear vision correction glasses. These safety glasses are intended to be worn over vision correction glasses.
#U.S. Safety Faceshield. The full faceshields must be worn when working with dangerous chemicals or materials. '''You should always try to keep the sash between your face and the chemistry in the bench.'''Remember it is not just your chemistry, but other user’s chemistry at the bench could cause a hazard. Any time your face is below the sash of a wet bench a safety faceshield should be worn. It is mandatory to wear a faceshield when working at the HF/TMAH bench.
#'''Failure to have on appropriate eye protection is a clear violation of the PPE policy and will result in lab suspension.'''

===Aprons and Gloves===

====General Information====
[[File:Lab Rules - 6.3.1.4 glove racks.png|thumb|Glove racks in gowning room and throughout the 'fab.]]
'''Always wear gloves when in the Nanofab'''. Gloves are intended to protect you from chemistry when the appropriate glove is used and to protect equipment (vacuum systems, table tops, etc.) from contamination from your skin. Acid aprons are

required when handling HF/TMAH and other highly corrosive or toxic chemicals. It is acceptable to wear an apron at any of the acid/base benches.

#You are not allowed to walk from one bay to another or use any lab equipment while gowned in the acid aprons, face shield or Trionic gloves used at the acid/base benches. This is to prevent possible chemical contamination of other equipment/areas in the lab. You must remove these items when leaving the acid/base/HF/TMAH wet bench areas of bays 4 or 5.
#There are many manufacturer on-line websites listing chemical resistance of gloves. Please check these guidelines and the SDS when selecting proper glove for a particular chemical.
#'''Five types of gloves are available in the Nanofab:'''

{| class="wikitable"
|'''Material'''
|'''Model'''
|'''Color'''
|'''Thickness'''
|'''Sizes'''
|-
|PVC
|Kimtech G5 Co-Polymer
|Clear
|0.1mm (4mil)
|S, M, L, XL
|-
|Latex
|Kimtech G3 Latex
|Tan
|0.2mm (8mil)
|6, 6.5, 7, 7.5, 8, 8.5, 9, 10
|-
|Nitrile
|Best CleaN-Dex Ultimate
|White
|0.15mm (6mil)
|XS, S, M, L, XL
|-
|Nitrile
|MAPA StanSolve A-30
|Green
|0.28mm (11mil)
|7, 8, 9, 10, 11
|-
|Blend
|MAPA TRIonic E-194
|Tan
|0.5mm (20mil)
|6, 7, 8, 9, 10, 11
|}

=====Polyvinyl Chloride (PVC): Kimtech G5 Co-Polymer=====
A relatively inexpensive static free general-purpose glove, poor for most organics. These gloves break down rapidly in acetone.

=====Latex: Kimtech G3 Latex=====
A general-purpose glove, poor for most organics, okay with aldehydes and keytones.

=====Nitrile, White: Best CleaN-Dex Ultimate=====
A thin general purpose low cost glove offers marginal protection from many keytones, okay with some acids and bases.

=====Nitrile, Green: MAPA StanSolve A-30=====
A thicker nitrile glove that affords increased protection over the CleaN-Dex white nitrile glove.

=====Nitrile/Neoprene/Latex Blend: MAPA TRIonic E-194=====
The glove is the standard wet processing glove. A blend of latex, neoprene, and carboxylated nitrile, which offers excellent protection from corrosives and solvents such as HF and acetone. Highly resistant to cuts, tears, and snags. Always use this glove when processing with HF, TMAH, or Bromine.

==Communications and Internet Access==
The basic approach to lab communications is that the Nanofab staff/management must be able to contact every user of the lab. All user emails and phone numbers must be current. '''If the Nanofab can’t communicate with you then you can’t enter/use the lab.''' Most of our systems will automatically remove you from the lab if your email bounces. If that happens then your access will be shut off to enter the lab. '''This is the user’s responsibility to make sure the contact info is correct and up to date'''.

===Process Equipment Scheduling===
The majority of the processing tools in the Nanofab are scheduled through a web-based equipment scheduling system known as “'''signup monkey'''”. Anyone with Nanofab access can view the site, but only users who have completed training on a tool will be able to schedule use of that tool. The site address is:

http://signupmonkey.ece.ucsb.edu. Once you have been trained by the specific staff engineer in charge of a system then you will be able to reserve time on the tool through signupmonkey.

There is more information about the system on our wiki page: [[Main Page|https://wiki.nanotech.ucsb.edu/w/index.php?title=Main_Page.]]

#'''Script writing for tool sign-up is forbidden'''. '''Users caught trying to run scripts will be suspended from the cleanroom without exception.'''
#Users must sign up for all tools on signup monkey before use. The only exception is when another user did not show up for their timeslot and you take it'''.'''
#Only trained/authorized users may operate process equipment. The tool owner is responsible for this training. '''Users will be suspended without exception for using equipment they are not authorized to use'''.

[[File:Lab Rules - 7.2 signupmonkey.png|none|thumb|484x484px|SignupMonkey, the online tool reservation system.]]

===Saving Data in the NanoFab===
The Nanofab does not allow USB memory sticks for saving electronic files. USB ports are disabled on most computers to prevent the spread of viruses. Instead, you can download your files from our SFTP server, Nanofiles. As long as you place your files into the proper folder on the computer, your files will be synced to the '''Nanofiles STFP server'''every hour (or immediately by running the "''Sync to NanoFiles''" script). For instructions on how to access these files, and where to place your files, please log into your '''SignupMonkey''' account and click the “here” link under '''Files''' on the front page as shown below. The email you receive will give you instructions on accessing/syncing to the '''Nanofiles server'''.

===Cell phone and Laptops===
It is fine to bring in your cell phones and laptops into the Nanofab. You need to clean your laptops and cellphones with ISO or ISO/Water before bringing them into the cleanroom.

===Earbuds===
You can use earbuds in the lab to listen to whatever you want. '''But it is your responsibility to make sure you can also hear other users or staff at all times'''. This is a clear safety issue if not followed. The use of earbuds is a privilege, not a necessity. '''Please do not abuse this policy as it can be removed. Willful non-compliance will result in a lab suspension'''.

===Global Nanofab email List===
All Nanofab users will be entered into our cleanroom@ece.ucsb.edu mail list. This is how the Nanofab staff/management will communicate with all users of the lab.

It is critical and '''required that you read all these emails''' as there will be important updates/announcements about lab policy, lab closures and any major lab events occurring.

===User Responsibility for Receiving Communications===
'''It is the users’ responsibility to make sure they are receiving emails from both cleanroom@ece.ucsb.eduand our signupmonkey'''. You must check with your IT people to make sure these emails are allowed and not placed in spam or denied from your emails. It is mandatory you receive and read all these emails.

===Contact Nanofab Staff===
You can contact staff through their individual email addresses or phones numbers. Or you can send an email to nanofab@ece.ucsb.edu which will contact all Nanofab staff. The appropriate staff will answer your email request.

===Synchronized Clocks===
[[File:Lab Rules - 7.8 clock + after hours contact.png|right]]
At the south end of all Nanofab bays are large digital clock displays mounted high on the south wall. These clocks are synchronized to one time and can be used as a timer for process. Contact Nanofab staff if they are not in sync. The emergency cell phone number is also displayed below these clocks.

===Wireless Access in the Nanofab and on campus===
All registered users should have a UCSBNetID to access the network. Repeaters are used within the facility to boost the signals.

====UCSB Secure====

#Everyone with a UCSBNetID can access this network.

====Eduroam (recommended)====

#Everyone with a UCSBNetID can access this network.

====UCSB Wireless Web (not recommended)====

#This wireless connection is open to anyone, but has very limited speeds and will not auto connect so you need to constantly log in and out.

==Nanofab Summer Intern Policy==

==='''Whenever the intern is in the Nanofab, the mentor must also be in the Nanofab.''' ===
Interns may use tools that do not require training sessions, such as microscopes, etc, unless the supervisor of these tools objects. Interns can work at photolith benches, and use components of the photolith benches, unless the supervisor of the bench objects. Interns will need to follow normal Nanofab access procedures, including orientation meeting with the Nanofab manager.

===Tool Usage by Interns===
Interns will be allowed to use a limited number of mainline Nanofab tools after completing training conducted by Nanofab staff. Mainline tools are tools scheduled through our web site signupmonkey. Certain tools may be unavailable to interns due to extremely heavy use or other concerns.

===Rates for Interns===
Summer interns will be charged a lower subsidized rate for use during the course of their internship. These rates are set each year. Please contact the lab director for more information.

Tool List

2026-06-01T18:22:43Z

John d: /* Lithography */ deleted Stepper 1

__NOTOC__
{| class="wikitable" style="width:min-content;"
|
=== Tool Categories ===

* [[:Category:Lithography|Lithography]]
* [[:Category:Vacuum Deposition|Deposition]]
* [[:Category:Dry Etch|Dry Etch]]
* [[:Category:Wet Processing|Wet Process]]
* [[:Category:Thermal Processing|Thermal Process]]
* [[:Category:Packaging|Packaging/Bonding]]
* [[Tool List#Measurement .26 Characterization|Metrology/Test]]
|}

=Lithography=

{|
|- valign="top"
| width="300" |
=====Photoresists and Lithography Chemicals=====

*See the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]

=====Contact Aligners (Optical Exposure)=====

*[[Suss Aligners (SUSS MJB-3)|Contact Aligners (SUSS MJB-3)]]
*[[Contact Aligner (SUSS MA-6)]]
*[[DUV Flood Expose]]

=====Direct-Write Lithography=====

*[[E-Beam Lithography System (Raith EBPG 5150+)]]
*[[SEM 1 (JEOL IT800SHL)|E-Beam Lithography (Nabity v9)]]
*[[Focused Ion-Beam Lithography (Raith Velion)]]
*[[Maskless Aligner (Heidelberg MLA150)]]

=====Other Patterning Systems=====

*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
=====Steppers (Optical Exposure)=====

*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

=====Thermal Processing for Photolithography=====

*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]
*[[Ovens 1, 2 & 3 (Labline)]]
*[[Oven 4 (Fisher)]]
*[[Oven 5 (Labline)]]
*[[High Temp Oven (Blue M)]]

=====Lithography Support=====

*The [https://wiki.nanotech.ucsb.edu/w/index.php?title=Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]
|-
|}

=Vacuum Deposition=

{|
|- valign="top"
| width="300" |
====Physical Vapor Deposition (PVD)====

=====Thermal Evaporation=====

*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[E-Beam 5 (Plasys)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

=====Sputter Deposition=====

*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]
*[[SEM Sample Coater (Hummer)]]

| width="400" |
=====Chemical Vapor Deposition (CVD)=====

*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

=Dry Etch=

{|
|- valign="top"
| width="300" |
=====Reactive Ion Etching (RIE)=====

*[[RIE 2 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]

=====Plasma Etching and Cleaning=====

*[[Plasma Clean (YES EcoClean)]]
*[[Plasma Activation (EVG 810)]]
*[[Ashers (Technics PEII)]]

=====Etch Monitoring=====

*[[Laser Etch Monitoring]] (Endpoint Detection)
*Optical Emission Spectra
*Residual Gas Analyzer (RGA)
| width="400" |
=====ICP-RIE=====

*[[ICP Etch 2 (Panasonic E626I)]]
*[[Oxford ICP Etcher (PlasmaPro 100 Cobra)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

=====Ion Milling and Reactive Ion Beam Etching=====

*[[CAIBE (Oxford Ion Mill)]]
*[[Focused Ion-Beam Lithography (Raith Velion)]]

=====Other Dry Etching=====

*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
*[[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[Wet Benches#Wafer Toxic Corrosive Benches|Wafer Toxic Corrosive Bench]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
*[[Gold Plating Bench]] (Semcon)
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
*[[Mechanical Polisher (Allied)]]
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
*[[Rapid Thermal Processor (SSI Solaris 150)]]
*[[Tube Furnace (Tystar 8300)]]
*[[Tube Furnace Wafer Bonding (Thermco)]]
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
| width="400" |
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]
**[[Ovens 1, 2 & 3 (Labline)]]
**[[Oven 4 (Thermo-Fisher HeraTherm)]]
**[[Oven 5 (Labline)]]
**[[High Temp Oven (Blue M)]]
|-
|}

=Packaging=
''Back-end Fabrication Tools''
{|
|
====Die Singulation / Down-sizing====

*[[Dicing Saw (ADT)]]
*[[Wafer Cleaver (PELCO Flip-Scribe)|Manual Wafer Cleaver (PELCO Flipscribe)]]
*[[Automated Wafer Cleaver (Loomis LSD-155LT)]]

====Other Packaging====

*[[Vacuum Sealer]]
|
====Wafer/Die Bonding====

*[[Flip-Chip Bonder (Finetech)]]

*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
|}

=Measurement & Characterization=
''[https://en.wikipedia.org/wiki/Metrology Metrology], Electrical/Optical Testing and Thin-Film/Materials [https://en.wikipedia.org/wiki/Characterization_(materials_science) Characterization] tools''
{|
|- valign="top"
| width="300" |
=====Optical Microscopy=====

*[[Microscopes|Optical Microscopes]] - ''General Use''
*[[Fluorescence Microscope (Olympus MX51)]]
*[[Deep UV Optical Microscope (Olympus)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
*[[Digital Microscope (Olympus DSX1000)|Digital Microscope #7 (Olympus DSX1000)]]
*[[Suss Aligners (SUSS MJB-3)#Backside Alignment|Near-IR Inspection Scope (MJB-IR)]]

=====Electron Microscopy=====

*[[SEM 1 (JEOL IT800SHL)]]
*[[Field Emission SEM 2 (JEOL IT800SHL)|SEM 2 (JEOL IT800SHL) w/ EDAX]]
*[[SEM Sample Coater (Hummer)]]

=====Topographical Metrology=====

*[[Step Profilometer (KLA Tencor P-7)]]
*[[Step Profilometer (DektakXT)]]
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |

=====Thin-Film/Material Analysis=====

======Thickness + Optical Constants======

*[[Ellipsometer (Woollam)]]
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]

======Electrical Analysis======

*[[Probe Station & Curve Tracer|Probe Station & Source/Meter Units]]
*[[Resistivity Mapper (CDE RESMAP)]]
*[[IR Thermal Microscope (QFI)|Thermal HotSpot IR Microscope (QFI)]]

======Other Properties======

*[[Film Stress (Tencor Flexus)]]
*[[Surface Analysis (KLA/Tencor Surfscan)|Particle Counts (KLA/Tencor Surfscan)]]
*[[Photoluminescence PL Setup (Custom)]]
|-
|}

== [[Decomissioned Tools]] ==
Click the link above for a list of tools that are no longer available in the lab, but the data is retained for legacy purposes.

Decomissioned Tools

2026-06-01T18:22:23Z

John d: added Stepepr 1

This is a list of tools that are '''No Longer Available''', but the data may be useful for recipes or other utility and are listed here only for informational purposes.

Tool recipes can often be found linked on the bottom of the tool's page.

These pages are not guaranteed to be kept available and may be removed at any time.

<code>'''Web Admins''' - when you move a tool here, please copy/paste the Recipes wikicode into the bottom of the tool page.</code>

 

==Lithography==

*[[E-Beam Lithography System (JEOL JBX-6300FS)]]
*[[Nano-Imprint (Nanonex NX2000)]]
*[[Stepper 1 (GCA 6300)]]

==Vacuum Deposition==

*[[RIE 3 (MRC)]]

==Dry Etching==

*[[ICP Etch 1 (Panasonic E646V)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Silicon Deep Etcher (Plasma-Therm SLR)]]

==Wet Processing==

* [[Critical Point Dryer]] 

==Thermal Processing==
 

==Packaging==
 

==Metrology==

Stepper 1 (GCA 6300)

2026-06-01T18:21:35Z

John d: tool removed notice

{{tool2|{{PAGENAME}}
|picture=Stepper1.jpg
|type = Lithography
|super= Biljana Stamenic
|super2= Bill Millerski
|location=Bay 7
|description = GCA 6300 I-Line Wafer Stepper
|manufacturer = GCA
|materials =
|toolid=37
}}
<big>'''This tool has been removed from the lab and is no longer available for use.'''</big>
<big>'''Please use the [[Stepper 2 (AutoStep 200)|GCA Autostep 200]] instead.'''</big>
<big>''2026-05''</big>

== About ==
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wafer.

The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR955CM-0.9 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0-2.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 for > 5 um thick positive processes. AZnLOF5510 for 1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.

'''Tutorial:''' If you are not familiar with the differences between Contact Litho and Stepper Litho, please review this short tutorial: [https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Demis D. John - Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]

* Explains how a Stepper mask can have ''many'' designs, and flexibly pattern the wafer with combos of designs.

== Detailed Specifications ==
*Lens: Olympus 2142: NA = 0.42; Depth of field = 1.2 um for 0.7 um process
*Maximum die size: ~15 mm x 15 mm
*Resolution: 500 nm over portion of field; 700 nm over entire field
*Registration tolerance: Max 0.30 um global alignment; Max 0.15 um local alignment (with care, you can achieve < 0.10 um registration)
*Minimum substrate size: ~ 10 x 10 mm
*Computer programmable recipes saved on hard disk
*Mask Plates: 5x5x0.090 inches, 5x reduction, typically Soda Lime Glass (Quartz is also acceptable), no pellicle.

== Process Information ==
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Process Page: Photolithography Recipes]

=== Mask/Reticle Design ===
*[[GCA 6300 Mask Making Guidance]] ('''''Work in progress- not ready yet''''')

===CAD FIles===

*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''
**''Insert your designs into the template as Instances scaled UP by 5x.''
**''During exposure, set the blades to 90/90 to block out AutoStep200 DFAS marks.''
**''Use the Cell "'''''Reticle_Align'''''" or "'''''Reticle_AlignFlat'''''" (flattened version of the same), GDS'' '''Layer 42/0'''''.''
**''Your device cell should have center of die at (0,0), and instance it into the template with coords (0,0), for a single-design centered on the plate.''
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.

== Service Provider ==
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.

== Operating Procedures ==
*[https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions] *
*[https://wiki.nanofab.ucsb.edu/w/images/d/d2/GCA_6300_Standard_Operating_Procedure_010524.pdf Standard Operating Procedures] *
*[https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)] - Focus Exposure Matrix (FEM) instructions
*[https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job] *
*[https://wiki.nanofab.ucsb.edu/w/images/3/3d/GCA_6300_-_Commands.pdf GCA 6300 User Accessible Commands] *
*[[Troubleshooting and Recovery]]
*[https://wiki.nanofab.ucsb.edu/w/images/5/5a/GCA_6300_Training_Manual-_3-23-2020.pdf Old Training Manual] *

== Recipes ==

* '''[[Stepper Recipes#Stepper 1 (GCA 6300)|Recipes > Lithography > Stepper Recipes > Stepper #1]]''' - starting processes for various I-Line photoresists, including Dose/Focus values.

To calibrate your own Litho processes, you will need to:

* Run your own [https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Focus Exposure Matrix] - instructions for doing this on the GCA 6300.
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM

Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes|Photolithography Recipes]] page.

== Staff Procedures ==
''These procedures are for Staff use - contact staff if you think you need to run these!''

*[[GCA 6300 Reboot Procedures]]

== Related Tools ==
* [[Stepper 2 (AutoStep 200)|Stepper 2 (GCA Autostep 200)]] - similar tool, compatible photomasks, but with automatic photomask alignment and "DFAS" automated local alignment. Can shoot multiple mask plates in single session.

Template:News

2026-05-27T19:53:35Z

John d: /* Prototyping Lab Opening Soon */ added arin's email

<startfeed />


''News from the U.C. Santa Barbara Nanofabrication Facility.''




===Prototyping Lab Opening Soon===
The Nanofab is launching a [https://protofab.oasis.ucsb.edu/ Prototyping Facility called the "Protofab"], which is located at [https://oasis.ucsb.edu/ UCSB's new OASIS building].

The new lab will enable taking your diced chips from the Nanofab, to the Protofab where you can wirebond, attach to PCB's/carriers, align+attach optical fibers etc., to make a real "prototype". The lab is expected to open in Summer 2026, with equipment currently being installed.

Access will be similar to the Nanofab - anyone can pay an hourly fee to go into the Protofab, using key fobs for access. (OASIS "Membership" is ''not required'' to use the Protofab, unless you also want your own desk + private lab space at OASIS.)

Contact the Protofab lab manager [mailto:arin_abed@ucsb.edu Arin Abed] for more information.
// [[User:John_d|Demis D. John]] 19:51, 27 May 2026 (UTC)

===DREAMS Hub awarded 2 projects in GaN and 5G/6G technologies===
[https://viterbischool.usc.edu/news/2024/09/usc-viterbi-led-ca-dreams-hub-is-awarded-31-9-million-in-funding-under-the-microelectronics-commons/ CA DREAMS Hub is awarded $31.9 million in funding under the Microelectronics Commons] -

* $16.2 Million to develop advanced gallium nitride (GaN) semiconductor technologies, with partners including USC, Northrop Grumman, Teledyne Technologies, HRL Laboratories, PseudolithIC, Monde Wireless Inc., Transphorm, UCLA and UC Santa Barbara.
* $15.7 Million in Funding for 5G/6G millimeter-wave Phased-Array Prototypes, with team USC, Northrop Grumman, HRL Laboratories, Teledyne, Caltech, UCLA, UC Santa Barbara, UC San Diego, Vorago, Global Foundries.

// [[User:John_d|Demis D. John]] 16:32, 23 September 2024 (PDT)

===NSF-ATE Award for SBCC and UCSB: New Semiconductor Pathway===
The UCSB NanoFab and CNSI were recently awarded a project by NSF-ATE to build a semiconductor pathway (associates degree or certificate) at Santa Barbara City College, utilizing UCSB Cleanrooms. The project "[https://www.nsf.gov/awardsearch/showAward?AWD_ID=2400982 Expansion of CCPRIME: Central Coast Partnership for Regional Industry-Focused Micro/Nanotechnology Education]" is one of 6 projects funded by an [https://new.nsf.gov/news/nsf-invests-76m-educational-projects-build-skilled Intel-NSF partnership.] The project builds on the existing "[https://nanofab.ucsb.edu/workforce#bootcamps Cleanroom Bootcamps]" already being run twice a year in the [https://www.cnsi.ucsb.edu/facilities/quantum-structures CNSI QSF cleanroom]. // [[User:John_d|Demis D. John]] 13:15, 14 August 2024 (PDT)

===CHIPS Act Award Announced to USC and UCSB NanoFab===
[https://carbajal.house.gov/news/documentsingle.aspx?DocumentID=1672 U.S. Congressman Salud Carbajal congratulates UCSB and the NanoFab] on receiving a [https://www.nist.gov/chips CHIPS & Science Act] award, as part of the [https://microelectronicscommons.org/ California DREAMS Hub (Microelectronics Commons) led by USC].
-- [[User:John d|Demis]] 12:06, 4 October 2023 (PDT)

=== RIE#3 Removed ===
We have removed [[RIE_3_(MRC)|RIE#3]] from the Nanofab, it has gone to the [https://www.ece.ucsb.edu/department-resources/electronics-shop/tcr Teaching Cleanroom]. All user's processes have been transferred to the [[Fluorine_ICP_Etcher_(PlasmaTherm/SLR_Fluorine_ICP)|Fluorine ICP Etcher]]. // [[User:John_d|Demis D. John]] 15:58, 6 August 2024 (PDT)

=== NanoFab staff awarded Goleta's Innovator of the Year 2023 ===
NanoFab staff member [[Demis D. John]] has been awarded the ''City of Goleta's "Innovator of the Year"'' for 2023! The award stems from the UCSB Nanofab's impact on the communities of Santa Barbara County and surrounding regions, in enabling cutting edge technology companies to thrive, which also enables many local careers in advanced high-tech. See the [https://sbscchamber.com/goletas-finest-2023-award-recipients-announced/ full announcement by the Santa Barbara South Coast Chamber of Commerce]. // [[User:John d|Demis D. John]] 13:58, 7 November 2023 (PST)

=== NanoFab Featured in Regional Tech Videos ===
The UCSB NanoFab is showcased as a driver of innovation and enabler of the regional high-tech industry.

See the videos here:
{| class="wikitable"
|[https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false '''''Santa Barbara County: This is TechTopia'''''] [[File:Techtopia_Vid_-_Thumbnail_PlayButton.jpg|none|300x300px|link=https://fast.wistia.net/embed/iframe/l46hsnwg4b?controlsVisibleOnLoad=true&muted=0&playerColor&copyLinkAndThumbnailEnabled=false]]

|[https://www.youtube.com/watch?v=op746os6eRI '''''UCSB NanoFab: An Innovation Center'''''] [[File:NanoFab_COE_Engineering_Vid_-_thumbnail_2_crop.jpg|none|300x300px|link=https://www.youtube.com/watch?v=op746os6eRI]]
|}

// [[User:John d|John d]] 09:26, 1 November 2023 (PST)




===''[[Template:News_-_Older_Articles|See older articles at this link]]''===
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<noinclude>[[Category:Templates]]</noinclude>