UCSB Nanofab Wiki - User contributions [en]

E-Beam 1 (Sharon)

2022-02-22T16:08:57Z

Lingg: /* Documentation */

{{tool|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Bill Millerski
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
= About =

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

A new fixture allowing up to four - 4" diameter wafers is now installed.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

= Detailed Specifications =
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Varian, Model SD700, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Pieces up to Four - 4" wafers in one run.
*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

= Documentation =
*[https://wiki.nanotech.ucsb.edu/w/images/9/90/EB-1_operation_instructions_rev2.pdf Operating Instructions]

= Recipes =
* See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''E-Beam Recipe Page''']], for the materials tables and deposition parameters for various materials.

File:EB-1 operation instructions rev2.pdf

2022-02-22T16:07:14Z

Lingg:

Tool List

2020-03-18T17:14:03Z

Lingg: /* Thermal Processing */ Deleted duplicate link

__NOTOC__
=Lithography=

{|
|- valign="top"
| width="300" |
=====Photoresists and Lithography Chemicals=====

*See the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]

=====Contact Aligners (Optical Exposure)=====

*[[Suss Aligners (SUSS MJB-3)]]
*[[IR Aligner (SUSS MJB-3 IR)]]
*[[Contact Aligner (SUSS MA-6)]]
*[[DUV Flood Expose]]

=====Other Patterning Systems=====

*[[E-Beam Lithography System (JEOL JBX-6300FS)]]
*[[Nano-Imprint (Nanonex NX2000)]]
*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
=====Steppers (Optical Exposure)=====

*[[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

=====Thermal Processing for Photolithography=====

*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]
*[[Ovens 1, 2 & 3 (Labline)]]
*[[Oven 4 (Fisher)]]
*[[Oven 5 (Labline)]]
*[[High Temp Oven (Blue M)]]
*[[Vacuum Oven (YES)]]

=====Lithography Support=====

*The [https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
*[https://signupmonkey.ece.ucsb.edu/wiki/index.php/Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]
|-
|}

=Vacuum Deposition=

{|
|- valign="top"
| width="300" |
=====Physical Vapor Deposition (PVD)=====

*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

=====Sputter Deposition=====

*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]

| width="400" |
=====Chemical Vapor Deposition (CVD)=====

*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

=Dry Etch=

{|
|- valign="top"
| width="300" |
=====Reactive Ion Etching (RIE)=====

*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]

=====Plasma Etching and Cleaning=====

*[[Plasma Clean (Gasonics 2000)]]
*[[Plasma Clean (YES EcoClean)]]
*[[Plasma Activation (EVG 810)]]
*[[Ashers (Technics PEII)]]

=====Etch Monitoring=====

*[[Laser Etch Monitoring]] (Endpoint Detection)
*Optical Emission Spectra
*Residual Gas Analyzer (RGA)
| width="400" |
=====ICP-RIE=====

*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

=====Ion Milling and Reactive Ion Beam Etching=====

*[[CAIBE (Oxford Ion Mill)]]

=====Other Dry Etching=====

*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
*[[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
*[[Gold Plating Bench]]
*[[Critical Point Dryer]]
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]
*[https://signupmonkey.ece.ucsb.edu/wiki/index.php/Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
*[[Rapid Thermal Processor (SSI Solaris 150)]]
*[[Tube Furnace (Tystar 8300)]]
*[[Tube Furnace Wafer Bonding (Thermco)]]
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
| width="400" |
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]
**[[Ovens 1, 2 & 3 (Labline)]]
**[[Oven 4 (Thermo-Fisher HeraTherm)]]
**[[Oven 5 (Labline)]]
**[[Vacuum Oven (YES)]]
**[[High Temp Oven (Blue M)]]
|
|-
|}

=Packaging=

*[[Dicing Saw (ADT)]]
*[[Flip-Chip Bonder (Finetech)]]
*[[Vacuum Sealer]]
*[[Wire Saw (Takatori)]]

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
=====Optical/Electron Microscopy=====

*[[Microscopes|Optical Microscopes]]
*[[Fluorescence Microscope (Olympus MX51)]]
*[[Deep UV Optical Microscope (Olympus)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
*[[Photo-emission & IR Microscope (QFI)|Photo-emission & Thermal IR Microscope (QFI)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Field Emission SEM 2 (JEOL 7600F)]]
*[[SEM Sample Coater (Hummer)]]

=====Topographical Metrology=====

*[[Step Profilometer (KLA Tencor P-7)]]
*[[Step Profilometer (Dektak 6M)]]
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]
*[[Surface Analysis (KLA/Tencor Surfscan)]]
**''Sub-micron Particle Counter''
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |
=====Thin-Film Analysis/Measurement=====

*[[Ellipsometer (Woollam)]]
*[[Film Stress (Tencor Flexus)]]
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
*[[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]
*[[Optical Film Thickness (Nanometric)]]
*[[Resistivity Mapper (CDE RESMAP)]]

=====Other Tools=====

*[[Probe Station & Curve Tracer]]
*[[Goniometer]]
*[[Photoluminescence PL Setup (Custom)]]
|-
|}

Rapid Thermal Processor (SSI Solaris 150)

2020-03-10T21:48:46Z

Lingg:

{{tool
|super = Brian Lingg
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading RTP system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==
Wafer handling: Manual loading of wafer into the oven, single wafer processing.

Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.

Ramp up rate: 10-200C per second, user-controllable.

Recommended steady state duration: 0-600 seconds per step.

Ramp down rate: Temperature Dependent, max 150°C per second.

Recommended steady state temperature range: 300C - 1250°C

Thermocouple temperature accuracy: + 2.5C

Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.

Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.

==Operating Instructions==

*[[SSI Solaris 150 - Operating Procedure|Solaris 150 Operating Procedure]]
*[https://www.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

Rapid Thermal Processor (SSI Solaris 150)

2020-03-10T21:47:37Z

Lingg:

{{WIP}}
{{tool
|super = Brian Lingg
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading RTP system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==
Wafer handling: Manual loading of wafer into the oven, single wafer processing.

Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.

Ramp up rate: 10-200C per second, user-controllable.

Recommended steady state duration: 0-600 seconds per step.

Ramp down rate: Temperature Dependent, max 150°C per second.

Recommended steady state temperature range: 300C - 1250°C

Thermocouple temperature accuracy: + 2.5C

Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.

Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.

==Operating Instructions==

*[[SSI Solaris 150 - Operating Procedure|Solaris 150 Operating Procedure]]
*[https://www.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

Rapid Thermal Processor (SSI Solaris 150)

2020-03-10T21:47:12Z

Lingg: /* Detailed Specificiations */

{{WIP}} 
{{tool
|super = Brian Lingg
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading RTP system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==
Wafer handling: Manual loading of wafer into the oven, single wafer processing.

Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.

Ramp up rate: 10-200C per second, user-controllable.

Recommended steady state duration: 0-600 seconds per step.

Ramp down rate: Temperature Dependent, max 150°C per second.

Recommended steady state temperature range: 300C - 1250°C

Thermocouple temperature accuracy: + 2.5C

Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.

Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.

==Operating Instructions==

*[[SSI Solaris 150 - Operating Procedure|Solaris 150 Operating Procedure]]
*[https://www.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

Rapid Thermal Processor (SSI Solaris 150)

2020-03-10T21:09:21Z

Lingg: /* About */

{{WIP}} 
{{tool
|super = Brian Lingg
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading RTP system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==
{{todo|list of specs, wafer sizes etc.}}

==Operating Instructions==

*[[SSI Solaris 150 - Operating Procedure|Solaris 150 Operating Procedure]]
*[https://www.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

Rapid Thermal Processor (SSI Solaris 150)

2020-03-10T21:06:33Z

Lingg: /* About */

Rapid Thermal Processor (SSI Solaris 150)

2020-03-10T21:06:03Z

Lingg:

File:RTP-Solaris-150.jpg

2020-03-10T18:12:40Z

Lingg:

Tool List

2020-03-09T17:49:12Z

Lingg: /* Thermal Processing */

__NOTOC__
=Lithography=

{|
|- valign="top"
| width="300" |
=====Photoresists and Lithography Chemicals=====

*See the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]

=====Contact Aligners (Optical Exposure)=====

*[[Suss Aligners (SUSS MJB-3)]]
*[[IR Aligner (SUSS MJB-3 IR)]]
*[[Contact Aligner (SUSS MA-6)]]
*[[DUV Flood Expose]]

=====Other Patterning Systems=====

*[[E-Beam Lithography System (JEOL JBX-6300FS)]]
*[[Nano-Imprint (Nanonex NX2000)]]
*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
=====Steppers (Optical Exposure)=====

*[[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

=====Thermal Processing for Photolithography=====

*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]
*[[Ovens 1, 2 & 3 (Labline)]]
*[[Oven 4 (Fisher)]]
*[[Oven 5 (Labline)]]
*[[High Temp Oven (Blue M)]]
*[[Vacuum Oven (YES)]]

=====Lithography Support=====

*The [https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
*[https://signupmonkey.ece.ucsb.edu/wiki/index.php/Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]
|-
|}

=Vacuum Deposition=

{|
|- valign="top"
| width="300" |
=====Physical Vapor Deposition (PVD)=====

*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

=====Sputter Deposition=====

*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]

| width="400" |
=====Chemical Vapor Deposition (CVD)=====

*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

=Dry Etch=

{|
|- valign="top"
| width="300" |
=====Reactive Ion Etching (RIE)=====

*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]

=====Plasma Etching and Cleaning=====

*[[Plasma Clean (Gasonics 2000)]]
*[[Plasma Clean (YES EcoClean)]]
*[[Plasma Activation (EVG 810)]]
*[[Ashers (Technics PEII)]]

=====Etch Monitoring=====

*[[Laser Etch Monitoring]] (Endpoint Detection)
*Optical Emission Spectra
*Residual Gas Analyzer (RGA)
| width="400" |
=====ICP-RIE=====

*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

=====Ion Milling and Reactive Ion Beam Etching=====

*[[CAIBE (Oxford Ion Mill)]]

=====Other Dry Etching=====

*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
*[[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
*[[Gold Plating Bench]]
*[[Critical Point Dryer]]
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]
*[https://signupmonkey.ece.ucsb.edu/wiki/index.php/Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
*[[Rapid Thermal Processor (SSI Solaris 150)]]
*[[Tube Furnace (Tystar 8300)]]
*[[Tube Furnace Wafer Bonding (Thermco)]]
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
*[[Solaris SSI RTP]]
| width="400" |
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]
**[[Ovens 1, 2 & 3 (Labline)]]
**[[Oven 4 (Thermo-Fisher HeraTherm)]]
**[[Oven 5 (Labline)]]
**[[Vacuum Oven (YES)]]
**[[High Temp Oven (Blue M)]]
|
|-
|}

=Packaging=

*[[Dicing Saw (ADT)]]
*[[Flip-Chip Bonder (Finetech)]]
*[[Vacuum Sealer]]
*[[Wire Saw (Takatori)]]

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
=====Optical/Electron Microscopy=====

*[[Microscopes|Optical Microscopes]]
*[[Fluorescence Microscope (Olympus MX51)]]
*[[Deep UV Optical Microscope (Olympus)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
*[[Photo-emission & IR Microscope (QFI)|Photo-emission & Thermal IR Microscope (QFI)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Field Emission SEM 2 (JEOL 7600F)]]
*[[SEM Sample Coater (Hummer)]]

=====Topographical Metrology=====

*[[Step Profilometer (KLA Tencor P-7)]]
*[[Step Profilometer (Dektak 6M)]]
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]
*[[Surface Analysis (KLA/Tencor Surfscan)]]
**''Sub-micron Particle Counter''
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |
=====Thin-Film Analysis/Measurement=====

*[[Ellipsometer (Woollam)]]
*[[Film Stress (Tencor Flexus)]]
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
*[[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]
*[[Optical Film Thickness (Nanometric)]]
*[[Resistivity Mapper (CDE RESMAP)]]

=====Other Tools=====

*[[Probe Station & Curve Tracer]]
*[[Goniometer]]
*[[Photoluminescence PL Setup (Custom)]]
|-
|}

Tool List

2020-03-09T17:46:50Z

Lingg: /* Thermal Processing */

__NOTOC__
=Lithography=

{|
|- valign="top"
| width="300" |
=====Photoresists and Lithography Chemicals=====

*See the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]

=====Contact Aligners (Optical Exposure)=====

*[[Suss Aligners (SUSS MJB-3)]]
*[[IR Aligner (SUSS MJB-3 IR)]]
*[[Contact Aligner (SUSS MA-6)]]
*[[DUV Flood Expose]]

=====Other Patterning Systems=====

*[[E-Beam Lithography System (JEOL JBX-6300FS)]]
*[[Nano-Imprint (Nanonex NX2000)]]
*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
=====Steppers (Optical Exposure)=====

*[[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

=====Thermal Processing for Photolithography=====

*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]
*[[Ovens 1, 2 & 3 (Labline)]]
*[[Oven 4 (Fisher)]]
*[[Oven 5 (Labline)]]
*[[High Temp Oven (Blue M)]]
*[[Vacuum Oven (YES)]]

=====Lithography Support=====

*The [https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
*[https://signupmonkey.ece.ucsb.edu/wiki/index.php/Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]
|-
|}

=Vacuum Deposition=

{|
|- valign="top"
| width="300" |
=====Physical Vapor Deposition (PVD)=====

*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

=====Sputter Deposition=====

*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]

| width="400" |
=====Chemical Vapor Deposition (CVD)=====

*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

=Dry Etch=

{|
|- valign="top"
| width="300" |
=====Reactive Ion Etching (RIE)=====

*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]

=====Plasma Etching and Cleaning=====

*[[Plasma Clean (Gasonics 2000)]]
*[[Plasma Clean (YES EcoClean)]]
*[[Plasma Activation (EVG 810)]]
*[[Ashers (Technics PEII)]]

=====Etch Monitoring=====

*[[Laser Etch Monitoring]] (Endpoint Detection)
*Optical Emission Spectra
*Residual Gas Analyzer (RGA)
| width="400" |
=====ICP-RIE=====

*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

=====Ion Milling and Reactive Ion Beam Etching=====

*[[CAIBE (Oxford Ion Mill)]]

=====Other Dry Etching=====

*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
*[[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
*[[Gold Plating Bench]]
*[[Critical Point Dryer]]
*[[Spin Rinse Dryer (SemiTool)]]
*[[Chemical-Mechanical Polisher (Logitech)]]
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]
*[https://signupmonkey.ece.ucsb.edu/wiki/index.php/Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
*[[Rapid Thermal Processor (SSI Solaris 150)]]
*[[Tube Furnace (Tystar 8300)]]
*[[Tube Furnace Wafer Bonding (Thermco)]]
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]
*[[Wafer Bonder (SUSS SB6-8E)]]
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
*Solaris SSI RTP
| width="400" |
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]
**[[Ovens 1, 2 & 3 (Labline)]]
**[[Oven 4 (Thermo-Fisher HeraTherm)]]
**[[Oven 5 (Labline)]]
**[[Vacuum Oven (YES)]]
**[[High Temp Oven (Blue M)]]
|
|-
|}

=Packaging=

*[[Dicing Saw (ADT)]]
*[[Flip-Chip Bonder (Finetech)]]
*[[Vacuum Sealer]]
*[[Wire Saw (Takatori)]]

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
=====Optical/Electron Microscopy=====

*[[Microscopes|Optical Microscopes]]
*[[Fluorescence Microscope (Olympus MX51)]]
*[[Deep UV Optical Microscope (Olympus)]]
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
*[[Photo-emission & IR Microscope (QFI)|Photo-emission & Thermal IR Microscope (QFI)]]
*[[Field Emission SEM 1 (FEI Sirion)]]
*[[Field Emission SEM 2 (JEOL 7600F)]]
*[[SEM Sample Coater (Hummer)]]

=====Topographical Metrology=====

*[[Step Profilometer (KLA Tencor P-7)]]
*[[Step Profilometer (Dektak 6M)]]
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]
*[[Surface Analysis (KLA/Tencor Surfscan)]]
**''Sub-micron Particle Counter''
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |
=====Thin-Film Analysis/Measurement=====

*[[Ellipsometer (Woollam)]]
*[[Film Stress (Tencor Flexus)]]
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
*[[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]
*[[Optical Film Thickness (Nanometric)]]
*[[Resistivity Mapper (CDE RESMAP)]]

=====Other Tools=====

*[[Probe Station & Curve Tracer]]
*[[Goniometer]]
*[[Photoluminescence PL Setup (Custom)]]
|-
|}

Rapid Thermal Processor (SSI Solaris 150)

2019-07-19T16:58:32Z

Lingg: /* Operating Instructions */

{{WIP}} 
{{tool
|super = Brian Lingg
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

== About ==
{{todo|insert basic info}}

== Detailed Specificiations ==
{{todo|list of specs, wafer sizes etc.}}

== Operating Instructions ==
* [[SSI Solaris 150 - Operating Procedure|Solaris 150 Operating Procedure]]
* [https://www.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

Rapid Thermal Processor (SSI Solaris 150)

2019-07-19T16:57:44Z

Lingg: /* Operating Instructions */

{{WIP}} 
{{tool
|super = Brian Lingg
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

== About ==
{{todo|insert basic info}}

== Detailed Specificiations ==
{{todo|list of specs, wafer sizes etc.}}

== Operating Instructions ==
* [[SSI Solaris 150 - Operating Procedure|Solaris 150 Operating Procedure]]
* [https://www.nanotech.ucsb.edu/wiki/index.php/File:Solaris_150_install_manual_software3_0_revQ.pdf User manual]

File:Solaris 150 install manual software3 0 revQ.pdf

2019-07-19T14:46:19Z

Lingg:

Step Profilometer (KLA Tencor P-7)

2018-10-11T00:47:42Z

Lingg: link to photo KLA-Tencor-P7_Photo.JPG

{{tool|{{PAGENAME}}
|picture=KLA-Tencor-P7_Photo.JPG
|type = Inspection, Test and Characterization
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 4
|email=lingg_b@ucsb.edu
|description = Surface Profilometer
|manufacturer = KLA Tencor
|materials =
}}
== About ==
The KLA Tencor info will be here

==Detailed Specifications==
*More info to go here

== Instructions ==
* [[KLA Tencor P7 - Basic profile instructions|Basic profile instructions]]

File:KLA-Tencor-P7 Photo.JPG

2018-10-11T00:46:57Z

Lingg: KLA-Tencor-P7 Photo

KLA-Tencor-P7 Photo

KLA Tencor P7 - Basic profile instructions

2018-10-11T00:44:02Z

Lingg: Added instructions

'''KLA Tencor P-7 Profiler Operating Instructions'''

Note: If the stage is not in the load/unload position, click on sample from the top menu bar and select manual load.

'''Do not open the door if the stage is moving or not at the load/unload position.'''
# Open door and place sample in the center of the chuck.
# Turn on vacuum and close door.
# Click on sample from the top menu bar and select manual load. Visuallyverify the sample is under the stylus. If it is not, unload and reposition sample.
# From the main Profiler screen, select scan recipe.
# Single click a scan recipe based on the total height of the structure to be measured.
# Select the xy icon.
# Select Focus. This will lower the stylus and focus on the sample.
# Use the arrow buttons on the screen to center sample measurement area. You can also double click on the area to be scanned to center it.
# Drag the blue cursor left to right or right to left across feature to be profiled. The arrow shows the scan direction and length of scan.
# Select start. Note: The image will shift down during the scan.
# When scan trace appears, select level. Move leveling cursors to flat area and select level again.
# Measurement cursors will appear. Move cursors to desired locations.
# Read the St Height in microns.
# Close window or save data or export graph if needed.
# Select Sample from main menu bar.
# Select manual load.
# Wait for stage to finish moving to load/unload position, open door and switch off vacuum.
# Remove sample and close door.

Step Profilometer (KLA Tencor P-7)

2018-10-11T00:42:02Z

Lingg: Added page for instructions

Step Profilometer (KLA Tencor P-7)

2018-10-11T00:34:04Z

Lingg: Copied from dektak page

{{tool|{{PAGENAME}}
|picture=Dektak6M.jpg
|type = Inspection, Test and Characterization
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 4
|email=lingg_b@ucsb.edu
|description = Surface Profilometer
|manufacturer = KLA Tencor
|materials =
}}
= About =
The Dektak VI is a profilometer for measuring step heights or trench depths on a surface. This is a surface contact measurement technique where a very low force stylus is dragged across a surface. The Dektak VI offers Windows based data acquisition, data analysis, and equipment control. The force of the tip on the surface is adjustable from .03 mg to 15 mg, allowing for the measuring of hard and soft surfaces. A stress measurement option is also included with this tool. The profilometer can measure to a depth of over 1 mm, allowing for direct measurement of MEMs type structures. Lateral resolution is tip-shape dependent and vertical resolution is 1A (when using the 6.55 mm range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the stylus using the manual X, Y, Theta stage. Software analysis can determine roughness, average step height, etc.

=Detailed Specifications=
*20 mm maximum sample thickness
*.03 mg to 15 mg variable tip force
*Height/Depth measurements to 1 mm
*1 A vertical resolution at 6.5 um full scale
*Standard stylus radius is 12.5 um, optional 2 um stylus available
*6 inch stage diameter with manual controls for moving and leveling
*Software data leveling and other analysis including stress
*Full GUI-based Windows control and data storage and exporting capability

Tool List

2018-10-11T00:30:42Z

Lingg: /* Topographical Metrology */ link to new KLA profiler

__NOTOC__
=Lithography=
You can see our available photoresists on the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemical_Datasheets Chemical Datasheets page].
{|
|- valign="top"
| width="300" |
===== Contact Aligners (Optical Exposure) =====
* [[Suss Aligners (SUSS MJB-3)]]
* [[IR Aligner (SUSS MJB-3 IR)]]
* [[Contact Aligner (SUSS MA-6)]]
* [[DUV Flood Expose]]

===== Other Patterning Systems =====
* [[E-Beam Lithography System (JEOL JBX-6300FS)]]
* [[Nano-Imprint (Nanonex NX2000)]]
* [[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
===== Steppers (Optical Exposure) =====
* [[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
* [[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
* [[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

===== Thermal Processing for Photolithography =====
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[High Temp Oven (Blue M)]]
* [[Vacuum Oven (YES)]]
* The [https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
|-
|}

= Vacuum Deposition =

{|
|- valign="top"
| width="300" |
===== Physical Vapor Deposition (PVD) =====
*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

===== Sputter Deposition =====
*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]

| width="400" |
===== Chemical Vapor Deposition (CVD) =====
*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

= Dry Etch =

{|
|- valign="top"
| width="300" |
===== Reactive Ion Etching (RIE) =====
*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]
*[[Ashers (Technics PEII)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[Plasma Activation (EVG 810)]]
*[[CAIBE (Oxford Ion Mill)]]
| width="400" |
===== ICP-RIE =====
*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

===== Other Dry Etching =====
*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
* [[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
* [[Gold Plating Bench]]
* [[Critical Point Dryer]]
* [[Spin Rinse Dryer (SemiTool)]]
* [[Chemical-Mechanical Polisher (Logitech)]]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
* [[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
* [[Strip Annealer]]
* [[High Temp Oven (Blue M)]]
* [[Tube Furnace (Tystar 8300)]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Tube Furnace AlGaAs Oxidation (Linberg)]]
| width="400" |
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[Vacuum Oven (YES)]]
* [[Wafer Bonder (SUSS SB6-8E)]]
* [[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
|-
|}

=Packaging=
* [[Dicing Saw (ADT)]]
* [[Flip-Chip Bonder (Finetech)]]
* [[Vacuum Sealer]]
* [[Wire Saw (Takatori)]]

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
===== Optical/Electron Microscopy =====
* [[Field Emission SEM 1 (FEI Sirion)]]
* [[Field Emission SEM 2 (JEOL 7600F)]]
* [[SEM Sample Coater (Hummer)]]
* [[Microscopes|Optical Microscopes]]
* [[Fluorescence Microscope (Olympus MX51)]]
* [[Deep UV Optical Microscope (Olympus)]]
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
* [[Photo-emission & IR Microscope (QFI)]]

===== Topographical Metrology =====
* [[Step Profile (Dektak IIA)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Step Profilometer (KLA Tencor P-7)]]
* [[Atomic Force Microsope (Dimension 3100/Nanoscope IVA)]]
* [[Surface Analysis (KLA/Tencor Surfscan)]]
** ''Sub-micron Particle Counter''
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |
===== Thin-Film Analysis/Measurement =====
* [[Ellipsometer (Woollam)]]
* [[Ellipsometer (Rudolph)]]
* [[Film Stress (Tencor Flexus)]]
* [[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
* [[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]
* [[Optical Film Thickness (Nanometric)]]
* [[Resistivity Mapper (CDE RESMAP)]]

===== Other Tools =====
* [[Probe Station & Curve Tracer]]
* [[Goniometer]]
* [[Photoluminescence PL Setup (Custom)]]
|-
|}

E-Beam 1 (Sharon)

2018-01-25T00:50:49Z

Lingg:

{{tool|{{PAGENAME}}
|picture=e-beam1.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = Four Pocket Electron Beam Evaporator
|manufacturer = Sharon Vacuum Co., Inc.
|toolid=7
}}
= About =

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

= Materials Table =
For the materials tables and deposition parameters for various materials, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|E-Beam Recipe Page]].

= Detailed Specifications =
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Mechanical Pump: Varian, Model SD700, 35 CFM
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV

=Documentation=
*[[media:New Operating Instructions Ebeam.pdf|Operating Instructions]]

E-Beam 1 (Sharon)

2018-01-25T00:50:08Z

Lingg: /* Documentation */ testing

File:Testtt.jpeg

2018-01-25T00:48:11Z

Lingg:

Frequently Asked Questions

2018-01-25T00:43:07Z

Lingg: typo

__TOC__ 

== Who do I contact for an equipment or general NanoFab problem? ==
For general Nanofab issues, please contact [Mailto:reynolds@ece.ucsb.edu Tom Reynolds], cell phone: (805) 451-3979

=== Emergencies ===
For immediate or health-related emergencies, call 9-911 from any of the phones in the lab, or 911 from your cell phone. Let them know that you are in '''"Engineering Sciences Building #225"''' at '''"Room #1102 - Gowning Room"'''.

=== Specific Equipment Problem ===
If you are having trouble with a piece of equipment, please contact the maintainer of that tool AND email the NanoFab Staff at [mailto:NanoFab@ece.ucsb.edu NanoFab@ece.ucsb.edu]. Maintainer's contact information can be found posted on the walls above/behind the equipment, or on the [[Tool List|tool page]].

If you need immediate assistance during business hours, you may call their cell phone number, otherwise use their office phone or email.

Always notify maintainers immediately of any unusual problem that may affect other users.

=== Contact all NanoFab Staff by Email ===
The entire NanoFab staff can be emailed at [mailto:NanoFab@ece.ucsb.edu NanoFab@ece.ucsb.edu]. This allows any staff member who is able to help to respond in a timely manner. Any problem for which you are unsure who to contact, send it to this email address.

=== NanoFab On-Call Staff ===
For after-hours and weekend emergency situations, please call (805) 451-0509 to contact the staff member that is on-call. This is for major issues/emergencies that will affect many users, such as alarms, leaks, wet bench, fume hood issues etc. Please do not call this number for problems with a single process tool that only affects a few users, instead see above.

== Can I add equipment reservations to my phone/computer/online calendar? ==
Yes, log into SignupMonkey, and on the "Future Reservations" column on the right, click on the "iCalendar" link. This links to a ".ics" file that lists all your upcoming equipment reservations. Open this file to add the reservations to your calendar.
[[File:SignupMonkey - Add to Calendar - Screen Shot 2017-11-30 at 3.55.11 PM.png|alt=Image showing the iCalendar ".ics" file link on SignupMonkey|none|frame|The "iCalendar" (.ics) file link on SignupMonkey]]

== Where do I find a recipe for a process (litho/etch/dep etc.)? ==
The "''Recipes and Data''" section on the left sidebar lists the different categories of recipes. In those pages, you can see whether a recipe exists for your process, and on which tool. We often include some basic characterization data on the recipes, but you should note that these are approximate only. '''''If you have tight tolerances, you need to characterize the recipe yourself''''' (ie. figure out deposition/etch rate, selectivity, verticality etc.).

For some recipes (etches in particular), we often post the parameter variations/recipe characterizations to show you how different recipe variables affect the etch. If you find that a provided recipe isn't exactly what you need, you can use this information to modify a copy of the recipe to suit your own needs. Please refer to the tool owner for creating your own recipes on each tool, especially for those that have a limited number of saved recipe slots.

== A recipe is indicated as "A", Available, where do I find info on this recipe? ==
If a recipe is marked as "A", ''Available'' on one of the recipe tables, this usually means that a graduate student has done this process at some point, but the NanoFab hasn't necessarily verified the process nor has the exact recipe and characterization. Contact anyone in the {{HLink|Staff List|Process Group}} to get in contact with the research group that developed the recipe.

== How do I get my files from the NanoFab computers? ==
USB ports are disabled on most NanoFab computers to prevent the spread of viruses.

Instead, you can download your files from our SFTP server. As long as you place your files into the proper directory on the computer, your files will be synced to the NanoFiles STFP server every hour (or immediately by running the "''Sync to NanoFiles''" script).

For further information on how to access these files, and where to place your files, please log into [https://signupmonkey.ece.ucsb.edu SignupMonkey] and click the '''Files > Request Login Credentials''' link. The email you receive will give you instructions on accessing/syncing to the NanoFiles server.

== How do I edit a page? ==
First, you need to have a login. Only active cleanroom users will have an active login.

Please see the [[Editing_Tutorials|Editing Tutorials]] for more information on editing a page.

We recently installed a "Visual Editor" plugin, which will usually allow you to avoid editing wiki code directly.

==What do I do if I find an error on the wiki?==
If you locate a mistake, error or typo, log in and make the change yourself. You can also let [mailto:demis@ucsb.edu Demis] know.

==Why aren't my edits showing up?==
While lab users are allowed to edit the wiki, all those edits will be approved by a staff member before going live.

RIE 3 (MRC)

2017-03-20T16:56:50Z

Lingg: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=RIE3.jpg
|type = Dry Etch
|super= Brian Lingg
|phone= 805-893-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = RIE #3 Fluorine-Based System MRC 51
|manufacturer = Materials Research Corporation (MRC)
|materials =
|toolid=26
}}
= About =

This is a Materials Research Corporation RIE-51 parallel plate, 13.56 MHz system used for etching with fluorine-containing gases (CF4, SF6, and CHF3). The system is used primarily for etching of Si, SiO2, and Si3N4 films. Metals such as tungsten may also be etched. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed DC bias or RF power control and a HeNe laser etch monitor with chart recorder. It is turbo pumped and has no loadlock.

CF4/O2 and SF6/O2 will etch Si, SiO2 and Si3N4 readily since free fluorine is readily liberated in the plasma. The oxygen (up to 40%) initially enhances the fluorine concentration resulting in a higher etch rate. The oxygen also minimizes polymer formation in CF4/O2. Too much Oxygen will compete for fluorine available, suppressing the etch rate. Argon can be added to increase the physical component of etching. The highest etch rates are achieved with SF6 due to the ease of liberating fluorine compared with CF4. The relative etch rate decreases as one goes from Si to Si3N4 to SiO2. CF4 and CHF3 can be used to selectivity etch SiO2 over Si and resist due to increased polymer formation from the presence of hydrogen. This polymer layer is thicker on Si and resist than on SiO2. The trade-off is selectivity versus sidewall profile as the polymer will result in a tapered wall profile. Also, the polymer can be difficult to remove after etching.

The etches have good selectivity to many metals and semiconductors such as Ni, Al, Cr, Ti, GaAs, InP, and GaN. The system generally produces anisotropic etch profiles unless one goes into a purely chemical fluorine etch mode with higher pressure SF6 processes. The system also has a strong loading effect so that larger substrates and open areas will require more feed gas and higher pressure to compensate. As a result, individual processes need to be characterized.

= Detailed Specifications =

*Etch gases include: CF4, CHF3, SF6, Ar, O2
*Low 1 E -6 ultimate chamber pressure
*13.56 Mhz excitation frequency
*Manual gas control
*Automatic pressure control
*Manual RF tuning network
*Timer circuit for stopping the plasma
*Sample size limited to approximately 4 inches
*Masking materials include: Ni, photoresist (limited to low bias/power), Cr, Al

=Documentation=

*[[media:RIE 3 Operationing instructions.pdf|Operating Instructions]]

Rapid Thermal Processor (AET RX6)

2017-03-20T16:54:34Z

Lingg: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
= About =
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

= Detailed Specifications =

*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
*Maximum ramp rate of 50C/Sec.
*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
*TC use for anneals up to 1200°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Max temp/Time=

{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|-
|width="100"|Temperature||width="75"|Time
|-
|1000°C || 1 Hour
|-
|1100°C||10 min
|-
|1200°C ||3 min
|-
|1300°C|| 10 sec
|-
|}

=Documentation=
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]]

Oven 5 (Labline)

2017-03-17T16:20:09Z

Lingg: /* Documentation */

= About =

The oven temperature can be controlled from 30C-200C with a user programable ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions: Chapter 7 is specific to Nanofab users]]
*[[ media: Oven5.pdf|Oven 5 Manual]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-03-17T16:16:54Z

Lingg: /* Documentation */

= About =

The oven temperature can be controlled from 30C-200C with a user programable ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions: Chapter 7 is specific to Nanofab users]]
*[[ media: Oven5manual.pdf|Oven 5 Manual]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-03-17T16:14:18Z

Lingg: /* Documentation */

= About =

The oven temperature can be controlled from 30C-200C with a user programable ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions: Chapter 7 is specific to Nanofab users]]
*[[ media: Oven5manual.pdf|Oven 5 Manual]]
[[File:Oven5manual.pdf]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Thermal Evap 2 (Solder)

2017-03-17T00:08:02Z

Lingg: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=Thermal2.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|location=Bay 3
|description = ?
|manufacturer = Custom
|materials =
|toolid=12
}}

= About =

Thermal evaporator #2 is the designated "Solder" evaporator. The tool is used primarily for solder materials including Gold, Indium and Tin. Use this tool for materials with low melting temperatures, or for materials that have a high risk of contamination in the e-beam evaporators.

= Detailed Specifications =
Wafers up to 12" can be mounted.

=Documentation=
*[[ media: Thermal Evaporator2.pdf|Operating Instructions]]

= Materials Table =
For the materials tables, please visit the [[Thermal_Evaporation_Recipes#Materials_Table_(Thermal Evaporator #1)|Thermal Evaporation Recipe Page]].

Rapid Thermal Processor (AET RX6)

2017-03-17T00:01:47Z

Lingg: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
= About =
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

= Detailed Specifications =

*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
*TC use for anneals up to 1200°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Max temp/Time=

{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|-
|width="100"|Temperature||width="75"|Time
|-
|1000°C || 1 Hour
|-
|1100°C||10 min
|-
|1200°C ||3 min
|-
|1300°C|| 10 sec
|-
|}

=Documentation=
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]]

Rapid Thermal Processor (AET RX6)

2017-03-16T23:59:09Z

Lingg: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
= About =
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

= Detailed Specifications =

*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Oxygen, Nitrogen and Forming Gas flows up to 10LPM. TC use for anneals up to 1200°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Max temp/Time=

{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|-
|width="100"|Temperature||width="75"|Time
|-
|1000°C || 1 Hour
|-
|1100°C||10 min
|-
|1200°C ||3 min
|-
|1300°C|| 10 sec
|-
|}

=Documentation=
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]]

Rapid Thermal Processor (AET RX6)

2017-03-16T23:58:11Z

Lingg: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
= About =
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

= Detailed Specifications =

*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10LPM. TC use for anneals up to 1200°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Max temp/Time=

{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|-
|width="100"|Temperature||width="75"|Time
|-
|1000°C || 1 Hour
|-
|1100°C||10 min
|-
|1200°C ||3 min
|-
|1300°C|| 10 sec
|-
|}

=Documentation=
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]]

Rapid Thermal Processor (AET RX6)

2017-03-16T23:56:32Z

Lingg: /* Max temp/Time */

{{tool|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
= About =
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

= Detailed Specifications =

*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Max temp/Time=

{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|-
|width="100"|Temperature||width="75"|Time
|-
|1000°C || 1 Hour
|-
|1100°C||10 min
|-
|1200°C ||3 min
|-
|1300°C|| 10 sec
|-
|}

=Documentation=
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]]

Rapid Thermal Processor (AET RX6)

2017-03-16T23:47:54Z

Lingg: /* About */

{{tool|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
= About =
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

= Detailed Specifications =

*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Max temp/Time=

{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|-
|width="100"|Temperature||width="75"|Time
|-
|1000°C || 1 Hour
|-
|1100°C||10 min
|-
|1200°C ||3 min
|-
|1300°C|| 10 sec
|-
|}

=Documentation=
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]]

Rapid Thermal Processor (AET RX6)

2017-03-16T23:46:29Z

Lingg: /* About */

{{tool|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
= About =
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

= Detailed Specifications =

*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Max temp/Time=

{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|-
|width="100"|Temperature||width="75"|Time
|-
|1000°C || 1 Hour
|-
|1100°C||10 min
|-
|1200°C ||3 min
|-
|1300°C|| 10 sec
|-
|}

=Documentation=
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]]

Rapid Thermal Processor (AET RX6)

2017-03-16T23:45:55Z

Lingg: /* About */

{{tool|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
= About =
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, near atmospheric pressure anneals in Oxygen Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

= Detailed Specifications =

*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. Nitrogen, Forming Gas, Dry Air at flows up to 10000 lpm TC use for anneals up to 1000°C Pyrometer for temperatures above 400°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Max temp/Time=

{| border="1" class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
|-
|width="100"|Temperature||width="75"|Time
|-
|1000°C || 1 Hour
|-
|1100°C||10 min
|-
|1200°C ||3 min
|-
|1300°C|| 10 sec
|-
|}

=Documentation=
*[[media:AET RTA Operating Instructions.pdf|Operating Instuctions]]

Oven 5 (Labline)

2017-02-09T23:11:39Z

Lingg: /* About */

= About =

The oven temperature can be controlled from 30C-200C with a user programable ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions: Chapter 7 is specific to Nanofab users]]
*[[ media: Oven5manual.pdf|Oven 5 Manual]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T23:06:06Z

Lingg: /* Documentation */

= About =

The oven temperature can be controlled from 30C-200C with a ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions: Chapter 7 is specific to Nanofab users]]
*[[ media: Oven5manual.pdf|Oven 5 Manual]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T23:02:43Z

Lingg: /* Documentation */

= About =

The oven temperature can be controlled from 30C-200C with a ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions: Chapter 7 is specific to Nanofab users]]
*[[ media: Oven 5 manual.pdf|Oven 5 Manual]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T22:15:35Z

Lingg: /* Documentation */

= About =

The oven temperature can be controlled from 30C-200C with a ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions: Chapter 7 is specific to Nanofab users]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T21:23:41Z

Lingg: /* Documentation */

= About =

The oven temperature can be controlled from 30C-200C with a ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions Chapter 7 is specific to Nanofab users]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T21:23:08Z

Lingg: /* Documentation */

= About =

The oven temperature can be controlled from 30C-200C with a ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions Chapter 7]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T21:21:32Z

Lingg: /* About */

= About =

The oven temperature can be controlled from 30C-200C with a ramp rate between 0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T21:17:24Z

Lingg:

= About =

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T21:16:31Z

Lingg: /* Oven5 */

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions]]

=Oven 5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

Oven 5 (Labline)

2017-02-09T21:15:57Z

Lingg: /* photo */

=Documentation=
*[[ media: Watlow_982_controller.pdf|Operating Instructions]]

=Oven5=
{{tool|{{PAGENAME}}
|picture=Oven5.jpg
|type = Lithography
|super= Brian Lingg
|location=Bay 5
|description = ?
|manufacturer =Labline
}}

File:Oven5.jpg

2017-02-09T21:14:48Z

Lingg:

Category:Images

2017-02-09T21:14:32Z

Lingg:

All Images
[[File:Oven5.jpg]]