UCSB Nanofab Wiki - User contributions [en]

Rapid Thermal Processor (SSI Solaris 150)

2025-07-28T15:48:13Z

Millerski w: Updated SOP

{{tool
|super = Bill Millerski
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1200 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==

*Wafer handling: Manual loading of wafer into the oven, single wafer processing.
*Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.
*Ramp up rate: 10-200°C per second, user-controllable.
*Recommended steady state duration: 0-600 seconds per step.
*Ramp down rate: Temperature Dependent, max 150°C per second.
*Steady state temperature range: 300C - 1200°C
*Thermocouple temperature accuracy: + 2.5C
*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.
*Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.
*Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).

==Operating Instructions==

*[https://wiki.nanofab.ucsb.edu/w/images/6/64/RTA_SSI_SOP.pdf Solaris 150 Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

== Process Info ==
{| class="wikitable"
|+Maximum Temperature vs Time thresholds
!Temp
!Time
|-
|1200°C
|2.0 min
|-
|1150°C
|2.5 min
|-
|1100°C
|5.0 min
|-
|1050°C
|5.5 min
|-
|1000°C
|6.0 min
|-
|950°C
|6.5 min
|-
|900°C
|7.5 min
|-
|850°C
|8.5 min
|-
|800°C
|10 min
|-
|750°C
|12 min
|-
|700°C
|15 min
|-
|650°C
|20 min
|-
|600°C
|30 min
|-
|550°C
|45 min
|-
|500°C
|60 min
|-
|450°C
|76 min
|-
|400°C
|85 min
|}

File:RTA SSI SOP.pdf

2025-07-24T15:59:02Z

Millerski w:

CAIBE (Oxford Ion Mill)

2023-12-21T16:47:58Z

Millerski w: Added Ion Mill SOP

{{tool2|{{PAGENAME}}
|picture=CAIBE.jpg
|type = Dry Etch
|super= Bill Millerski
|super2= Lee Sawyer
|location=Bay 2
|description = CAIBE (Chemically Assisted Ion Beam Etcher)
|manufacturer = Oxford Instruments
|model = Ionfab 300 Plus
|materials = Various
|toolid=58
}}
==About==

This is an Oxford Instruments PlasmaLab 300 IBE/RIBE/CAIBE system used for ion beam etching of a variety of materials including metals, oxides, semiconductors. Ion beam etching (IBE) allows control of sidewall etch profiles by tilting and rotating the sample during the etch. Reactive chemistry ("Chemically Assisted Ion Beam Etching", CAIBE) can be used, when appropriate, to enhance the etch rate of materials, such as oxides, polymers, and semiconductors.

This system is used to physically ion beam etch noble and inert metals with Ar ion milling, and to etch other materials that react with chlorine, fluorine, or oxygen using a reactive ion beam. The ion beam is generated in a 15cm diameter 3-grid ion source manufactured by Oxford. The Ion beam voltage & current control the etch rate. Beam voltage (related to ion energy) affects the sputter yield (atoms etched per incident ion) and Ion beam current controls the flux of ions (number of ions in the beam). Etch rate should be roughly linear with beam current. Neutralizing electrons are generated by a plasma bridge neutralizer (PBN) so that samples are not charged by ions during the etch. Samples can be cooled to 5°C or heated to 300°C for etching. He back-side cooling is used to transfer heat from(to) the sample to(from) the cooled(heated) platen.

===Cluster Configuration===
The Ion Mill system is clustered with 2 Oxford ALD systems, allowing the process flexibility of etching followed by ALD passivation or metalization without breaking vacuum.

*Chamber #1: [[Atomic Layer Deposition (Oxford FlexAL)|ALD Metal Films only]]
*Chamber #2: [[CAIBE (Oxford Ion Mill)|CAIBE Oxford Ion Mill]] (this page)
*Chamber #3: [[Atomic Layer Deposition (Oxford FlexAL)|ALD Dielectrics Films only]]

==Detailed Specifications==

*Etch gases include: CF4, Cl2, Ar, O2
*Cl2 available in CAIBE mode (Cl2 not entering ion gun) through a gas ring.
*RIBE (reactive gas entering ion gun during RF discharge) mode for all reactive gases
*Low 1 E -7 Torr ultimate chamber pressure, etch pressure ~1 E-4 Torr
*15cm ion-gun with PBN neutralizer
*Angled etch control from 0 degrees (normal incidence) to 75 degrees.
*Sample Rotated or fixed at controlled position for etching.
*Vb from 50V to over 1000V
*Ib up to 500mA
*He-backside cooling
*Substrate temperature 5C to 300C
*Sample sizes:
**6" wafer (no carrier needed)
**4" wafer mount with backside Helium cooling ports
**2" wafer mount with backside Helium cooling ports
**35mm square pieces or smaller, mount with backside Helium cooling ports
*Clustered through vacuum chambers with ALD systems.
*Masking material depends on material being etched and etch gas used

==Recipes==
Recipes can be found on the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29 '''CAIBE Recipes Page'''].

==Procedures & Documentation==

*[https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cluster_Tool_Operating_Instructions_Rev_B.pdf Cluster Operating Instructions] - same instructions as ALD, except for the '''following difference''':
**''Make sure to securely attach your samples to the platens with clips, since the holder will be angled and rotated!'' ''6-inch wafers can be loaded as-is.''

*[https://wiki.nanofab.ucsb.edu/w/images/4/4d/Oxford_Ion_Mill_SOP.pdf Ion Mill SOP]
*[//wiki.nanotech.ucsb.edu/wiki/images/7/75/Ion_Beam_Etch_Overview_rev1.pdf Additional Documentation]

Rapid Thermal Processor (SSI Solaris 150)

2023-12-08T15:36:41Z

Millerski w: Changed the max temperature from 1250 to 1200 in the "About" section.

{{tool
|super = Bill Millerski
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1200 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==

*Wafer handling: Manual loading of wafer into the oven, single wafer processing.
*Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.
*Ramp up rate: 10-200°C per second, user-controllable.
*Recommended steady state duration: 0-600 seconds per step.
*Ramp down rate: Temperature Dependent, max 150°C per second.
*Steady state temperature range: 300C - 1200°C
*Thermocouple temperature accuracy: + 2.5C
*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.
*Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.
*Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).

 

==Operating Instructions==

*[https://wiki.nanofab.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

Rapid Thermal Processor (SSI Solaris 150)

2023-12-08T15:34:55Z

Millerski w: Temperature maximum in the details section from 1250 to 1200

{{tool
|super = Bill Millerski
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==

*Wafer handling: Manual loading of wafer into the oven, single wafer processing.
*Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.
*Ramp up rate: 10-200°C per second, user-controllable.
*Recommended steady state duration: 0-600 seconds per step.
*Ramp down rate: Temperature Dependent, max 150°C per second.
*Steady state temperature range: 300C - 1200°C
*Thermocouple temperature accuracy: + 2.5C
*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.
*Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.
*Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).

 

==Operating Instructions==

*[https://wiki.nanofab.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

File:Oxford Ion Mill SOP.pdf

2023-11-13T17:35:45Z

Millerski w:

Step Profilometer (KLA Tencor P-7)

2023-10-30T22:09:23Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=KLA-Tencor-P7_Photo.JPG
|type = Inspection, Test and Characterization
|super= Bill Millerski
|super2= Aidan Hopkins
|phone=(805)839-3918x210
|location=Bay 4
|description = Surface Profilometer
|manufacturer = KLA Tencor
|materials =
}}
==About==
The KLA-Tencor P7 profilometer is a stylus profilometer that drags a stylus across the wafer surface with controlled pressure, aligned via microcope, and measures the step-heights of surface features during the measurement. The system has a motor-controlled stage for X/Y/Rotation, and is typically used to measure step heights in single areas on various sample sizes frmo small pieces to 4-inch wafers. It can be programmed to scan multiple locations on a single wafer or 3D areas topography.

==Detailed Specifications==

*Probe Tip has a 2um radius and a 60 degree angle
*Maximum wafer size: ____
*1D Profile and 2D Raster Scanning
*Lateral Resolution: _____
*Height Resolution: _____

==Instructions==

*[[KLA Tencor P7 - Basic profile instructions|KLA Tencor Operation Procedure]]
*[[KLA Tencor P7 - Saving Profile Data|Saving+Extracting Profile Data]]

Resistivity Mapper (CDE RESMAP)

2023-10-30T22:07:23Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=CDEResmap.jpg
|type = Inspection, Test and Characterization
|super= Bill Millerski
|super2= Tony Bosch
|phone=(805)839-3918x217
|location=Bay ?
|email=bosch@ece.ucsb.edu
|description = CDE Resmap 4 Point Resistivity Mapper
|manufacturer = [http://www.cde-resmap.com/ Creative Design Engineering]
|materials =
}}
=About=
The CDE Resmap 4 point resistivity mapper is used for measuring resistivity across the wafer for substrates and thin films deposited in the facility. The system can do automated resistivity mapping for pieces to 8 inch wafers.

The resistivity range is 2 mOhm/Square to 5 MOhm/square. Contour plots, 3D plots, histograms, data exporting are supported from the Windows XP based control system.

==Instructions==

*[[CDE ResMap Quick-Start instructions]]
*[https://wiki.nanofab.ucsb.edu/w/images/3/37/CDE_ResMap_Operating_Instructions.pdf CDE ResMap Operating Instructions]
*System can export CSV files - contact supervisor for instructions.

XeF2 Etch (Xetch)

2023-10-30T22:03:10Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=XeF2.jpg
|type = Dry Etch
|super= Bill Millerski
|super2= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = XeF2 Gas Etcher
|manufacturer = [http://www.xactix.com/ Xactix Inc]
|materials =
|toolid=31
}}
==About==
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF2 (no plasma enhancement or heating is needed) with the use of photoresist or SiO2 or Al as an etch mask at room temperature.

The XeF2 etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF2 gas and, then, pumped out (to 0.3 Torr). You can also add N2 gas, together with XeF2 gas, into the etch chamber for some applications.

There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.

Maximum Wafer size is 6".

For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab.

==Documentation==

*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
*{{file|XACTI XeF2 Etch Operating Instructions.pdf|XACTI XeF2 etch Instructions}}

==Operation Procedure==

*[https://wiki.nanofab.ucsb.edu/w/images/1/10/XeF2_Etch_Operating_Instructions.pdf XeF2 Etch Operating Procedure]

==Recipes==

*[[Other Dry Etching Recipes#XeF2%20Etch%20.28Xetch.29|Other Dry Etching Recipes: XeF2 Etcher]]

XeF2 Etch (Xetch)

2023-10-30T22:02:02Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=XeF2.jpg
|type = Dry Etch
|super= Bill Millerski
|super2= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = XeF2 Gas Etcher
|manufacturer = [http://www.xactix.com/ Xactix Inc]
|materials =
|toolid=31
}}
==About==
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF2 (no plasma enhancement or heating is needed) with the use of photoresist or SiO2 or Al as an etch mask at room temperature.

The XeF2 etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF2 gas and, then, pumped out (to 0.3 Torr). You can also add N2 gas, together with XeF2 gas, into the etch chamber for some applications.

There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.

Maximum Wafer size is 6".

For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab.

==Documentation==

*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
*{{file|XACTI XeF2 Etch Operating Instructions.pdf|XACTI XeF2 etch Operating Instructions}}

==Operation Procedure==

*[https://wiki.nanofab.ucsb.edu/w/images/1/10/XeF2_Etch_Operating_Instructions.pdf XeF2 Etch Operating Procedure]

==Recipes==

*[[Other Dry Etching Recipes#XeF2%20Etch%20.28Xetch.29|Other Dry Etching Recipes: XeF2 Etcher]]

XeF2 Etch (Xetch)

2023-10-30T22:00:22Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=XeF2.jpg
|type = Dry Etch
|super= Bill Millerski
|super2= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = XeF2 Gas Etcher
|manufacturer = [http://www.xactix.com/ Xactix Inc]
|materials =
|toolid=31
}}
==About==
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF2 (no plasma enhancement or heating is needed) with the use of photoresist or SiO2 or Al as an etch mask at room temperature.

The XeF2 etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF2 gas and, then, pumped out (to 0.3 Torr). You can also add N2 gas, together with XeF2 gas, into the etch chamber for some applications.

There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.

Maximum Wafer size is 6".

For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab.

==Documentation==

*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
*{{file|XACTI XeF2 Etch Instructions.pdf|XACTI XeF2 etch Operating Instructions}}

==Operation Procedure==

*[https://wiki.nanofab.ucsb.edu/w/images/1/10/XeF2_Etch_Operating_Instructions.pdf XeF2 Etch Operating Procedure]

==Recipes==

*[[Other Dry Etching Recipes#XeF2%20Etch%20.28Xetch.29|Other Dry Etching Recipes: XeF2 Etcher]]

XeF2 Etch (Xetch)

2023-10-30T21:59:19Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=XeF2.jpg
|type = Dry Etch
|super= Bill Millerski
|super2= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = XeF2 Gas Etcher
|manufacturer = [http://www.xactix.com/ Xactix Inc]
|materials =
|toolid=31
}}
==About==
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF2 (no plasma enhancement or heating is needed) with the use of photoresist or SiO2 or Al as an etch mask at room temperature.

The XeF2 etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF2 gas and, then, pumped out (to 0.3 Torr). You can also add N2 gas, together with XeF2 gas, into the etch chamber for some applications.

There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations.

Maximum Wafer size is 6".

For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab.

==Documentation==

*[//wiki.nanotech.ucsb.edu/w/images/7/7b/Xactic-XetchX3-System-Manual.pdf System Manual]
*[//wiki.nanotech.ucsb.edu/w/images/c/c0/XeF2-Results.pdf Si Etching Profile & Results]
*{{file|XACTI XeF2 Etch Operating Instructions.pdf|XACTI XeF2 etch Operating Instructions}}

== Operation Procedure ==

* [https://wiki.nanofab.ucsb.edu/w/images/1/10/XeF2_Etch_Operating_Instructions.pdf XeF2 Etch Operating Procedure]

==Recipes==

*[[Other Dry Etching Recipes#XeF2%20Etch%20.28Xetch.29|Other Dry Etching Recipes: XeF2 Etcher]]

File:XeF2 Etch Operating Instructions.pdf

2023-10-30T21:56:41Z

Millerski w: Updated SOP

== Summary ==
Updated SOP

Tube Furnace Wafer Bonding (Thermco)

2023-10-30T21:55:29Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=WaferThermco.jpg
|type = Thermal Processing
|super= Bill Millerski
|super2= Mike Silva
|phone=(805)839-3918x219
|location=Bay 4
|email=silva@ece.ucsb.edu
|description = Wafer Fusion Furnace
|manufacturer = Thermco
|materials =
|toolid=43
}}
=About=
This wafer fusion furnace is a custom built unit designed for the fusion of different material types (such InP and Si) to create new heterostructures for novel electronic and optoelectronic devices. Custom made bonding fixtures are loaded into the furnace through a purged glove-box that is oxygen free to below 10 ppm with a dew point near -80°C. The furnace is nitrogen purged and can operate up from 200°C to 1200°C. Many different materials are allowed and maximum temperature is dependent on the materials themselves, to avoid contamination of the furnace.

=Detailed Specifications=

*Temperatures 200°C to 1200°C
*4 inch diameter furnace
*Nitrogen ambient at atmospheric pressure
*Oxygen control in glove box to less than 10 ppm
*Dew point near -80°C
*Custom bonding fixtures of various materials allowed

= Operation Procedures =

* [https://wiki.nanofab.ucsb.edu/w/images/2/2f/Tube_Furnace_Wafer_Bonding_SOP.pdf Tube Furnace Operation Procedure]

File:Tube Furnace Wafer Bonding SOP.pdf

2023-10-30T21:51:22Z

Millerski w: Updated SOP

== Summary ==
Updated SOP

Wafer Bonder (Logitech WBS7)

2023-10-30T21:50:20Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=Logitech_WSBU-6_Wafer_Bonder_-_photo_-_800px.png
|type = Thermal Processing
|super= Bill Millerski
|super2= Don Freeborn
|phone=(805)839-3918x216
|location=Bay 5
|email=freeborn@ece.ucsb.edu
|description = Wafer Bonder WSB7
|manufacturer = Logitech
}}
==About==

This tool is most often used for bonding samples to Silicon carrier wafers with CrystalBond wax.

This mounting method can be used for

*securing smaller parts for use on 100mm tools (such as the [[Chemical-Mechanical Polisher (Logitech)|CMP]])
*providing a carrier wafer for through-etching of Silicon wafers on the [[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Bosch Etcher]]
*for [[Dicing Saw (ADT)|dicing]]
*for [[lithography]]

A user can place the two wafers to be bonded in contact, with the adhesive in between (such as wax, photoresist etc.). A rubber membrane is lowered on top, creating a small vacuum chamber. The tool can then be programmed to heat the wafers and melt the wax/cure the adhesive, while vacuum is pulled in the chamber, which pulls the rubber membrane down onto the top wafer. This flattens the bond and evacuates bubbles from between the wafers, providing a planar bond.

We also have recipes for spin-coating the crystalbond wax, allowing for a uniform coating of the adhesive wax.
==Detailed Specifications==

*Substrate Size: 4"-6"
*Temperature Range: 20°C-188°C

==Operation Procedures==

* [https://wiki.nanofab.ucsb.edu/w/images/7/7a/Logitech_Wafer_Bonder_Operating_Instructions.pdf Wafer Bonder Operation Procedure]

==Recipes==
''Known working recipes for bonding wafers, and tips & tricks for developing your own:''

*Recipes > Packaging Recipes > [https://wiki.nanotech.ucsb.edu/w/index.php?title=Packaging_Recipes#Wafer_Bonder_.28Logitech_WBS7.29 Wafer Bonder (Logitech WBS7)]

File:Logitech Wafer Bonder Operating Instructions.pdf

2023-10-30T21:46:53Z

Millerski w:

Rapid Thermal Processor (SSI Solaris 150)

2023-10-30T21:46:03Z

Millerski w: Updated SOP

{{tool
|super = Bill Millerski
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==

*Wafer handling: Manual loading of wafer into the oven, single wafer processing.
*Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.
*Ramp up rate: 10-200°C per second, user-controllable.
*Recommended steady state duration: 0-600 seconds per step.
*Ramp down rate: Temperature Dependent, max 150°C per second.
*Recommended steady state temperature range: 300C - 1250°C
*Thermocouple temperature accuracy: + 2.5C
*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.
*Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.
*Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).

 

==Operating Instructions==

*[https://wiki.nanofab.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

File:RTA SSI Operating Instructions.pdf

2023-10-30T21:45:09Z

Millerski w: Millerski w uploaded a new version of File:RTA SSI Operating Instructions.pdf

Resistivity Mapper (CDE RESMAP)

2023-10-30T21:44:07Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=CDEResmap.jpg
|type = Inspection, Test and Characterization
|super= Bill Millerski
|super2= Tony Bosch
|phone=(805)839-3918x217
|location=Bay ?
|email=bosch@ece.ucsb.edu
|description = CDE Resmap 4 Point Resistivity Mapper
|manufacturer = [http://www.cde-resmap.com/ Creative Design Engineering]
|materials =
}}
=About=
The CDE Resmap 4 point resistivity mapper is used for measuring resistivity across the wafer for substrates and thin films deposited in the facility. The system can do automated resistivity mapping for pieces to 8 inch wafers.

The resistivity range is 2 mOhm/Square to 5 MOhm/square. Contour plots, 3D plots, histograms, data exporting are supported from the Windows XP based control system.

==Instructions==

*[[CDE ResMap Quick-Start instructions]]
*[https://wiki.nanofab.ucsb.edu/w/images/3/37/CDE_ResMap_Operating_Instructions.pdf CDE ResMap SOP]
*System can export CSV files - contact supervisor for instructions.

File:CDE ResMap Operating Instructions.pdf

2023-10-30T21:42:05Z

Millerski w: SOP Update

== Summary ==
SOP Update

Rapid Thermal Processor (AET RX6)

2023-06-15T15:58:05Z

Millerski w: Updated SOP

{{tool2|{{PAGENAME}}
|picture=RTP.jpg
|type = Vacuum Deposition
|super= Bill Millerski
|super2= Tony Bosch
|phone=(805)839-3918x210
|location=Bay 3
|email=lingg@ece.ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=42
}}
=About=
Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO2, Si3N4, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

=Detailed Specifications=

*Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
*Maximum ramp rate of 50°C/Sec.
*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
*TC use for anneals up to 1200°C
*Windows-based process monitoring and control software by Sedona Visual Controls

=Documentation=

*[https://wiki.nanotech.ucsb.edu/w/images/0/0b/RTA_AET_Operating_Instructions.pdf Operating Instuctions]

File:RTA AET Operating Instructions.pdf

2023-06-15T15:57:07Z

Millerski w: Operating Instructions

== Summary ==
Operating Instructions

Rapid Thermal Processor (SSI Solaris 150)

2023-05-22T17:01:31Z

Millerski w: Updated SOP

{{tool
|super = Bill Millerski
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading RTP system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==

*Wafer handling: Manual loading of wafer into the oven, single wafer processing.
*Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.
*Ramp up rate: 10-200°C per second, user-controllable.
*Recommended steady state duration: 0-600 seconds per step.
*Ramp down rate: Temperature Dependent, max 150°C per second.
*Recommended steady state temperature range: 300C - 1250°C
*Thermocouple temperature accuracy: + 2.5C
*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.
*Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.
*Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).

 

==Operating Instructions==

*[https://wiki.nanotech.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

File:RTA SSI Operating Instructions.pdf

2023-05-22T16:59:49Z

Millerski w:

Mechanical Polisher (Allied)

2023-05-15T16:06:41Z

Millerski w: Added SOP Link

{{tool2|{{PAGENAME}}
|picture=AlliedPolisher10-1110.jpg
|type = Wet Processing
|super= Bill Millerski
|location=ESB Rm. 1111
|description = Mechanical Polisher
|manufacturer = Allied High Tech Products Inc.
|materials =
|model=10-1110
|toolid=70
}}
=About=
The Allied Polisher allows for bulk thinning of substrates, and fine polishing of optical waveguide facets. Various materials are typically lapped/polished, such as Silicon GaAs, InP.

==Detailed Specs==

*Max. Substrate Size
*Lapping Films available:
**10µm AlOx
**5µm AlOx
**2µm AlOx
**1µm AlOx
**0.5 AlOx

==Operating Procedures==

*[https://wiki.nanotech.ucsb.edu/w/images/f/f2/Mechanical_Polisher_SOP_Rev_A.pdf Mechanical Polisher SOP]

==Recipes==

*''To Be Added''

File:Mechanical Polisher SOP Rev A.pdf

2023-05-15T16:04:44Z

Millerski w:

KLA Tencor P7 - Basic profile instructions

2022-11-02T22:20:15Z

Millerski w: spelling error

'''KLA Tencor P-7 Profiler Operating Instructions'''

'''Do not open the door if the stage is moving or not at the load/unload position.'''

'''Do not run the stylus faster than 10um/s without prior staff approval.'''

'''Do not save changes to generic user recipes.'''

'''Do not reach inside the tool with your hands (tweezers only).'''

'''Do not measure step heights greater than 440um from low to high.'''

 

#Open door and place sample in the center of the chuck.
#Turn on vacuum and close door.
#Click on sample from the top menu bar and select manual load. Visually verify the sample is under the stylus. If it is not, unload and reposition sample.
#From the main Profiler screen, select scan recipe.
#Single click a scan recipe based on the total height of the structure to be measured.
#Select the xy icon.
#Select Focus. This will lower the stylus and focus on the sample.
#Use the arrow buttons on the screen to center sample measurement area. You can also double click on the area to be scanned to center it.
#Drag the blue cursor left to right or right to left across feature to be profiled. The arrow shows the scan direction and length of scan.
#Select start. Note: The image will shift down during the scan.
#When scan trace appears, select level. Move leveling cursors to flat area and select level again.
#Measurement cursors will appear. Move cursors to desired locations.
#Read the St Height in microns.
#Close window or save data or export graph if needed.
#Select Sample from main menu bar.
#Select manual load.
#Wait for stage to finish moving to load/unload position, open door and switch off vacuum.
#Remove sample and close door.
#Fill out the log-book.

Note: If the stage is not in the load/unload position, click on ''Sample'' from the top menu bar and select ''Manual Load''. The system periodically performs automatic calibration and does not move back to the Load/Unload position afterwards.

KLA Tencor P7 - Basic profile instructions

2022-10-19T19:32:35Z

Millerski w: "Do not" guidance at the beginning of the work instructions

'''KLA Tencor P-7 Profiler Operating Instructions'''

'''Do not open the door if the stage is moving or not at the load/unload position.'''

'''Do not run the stylus faster than 10um/s without prior staff approval.'''

'''Do not save changes to generic user recipes.'''

'''Do not reach inside the tool with your hands (tweezers only).'''

'''Do not measure step heights greater then 440um from low to high.'''

 

#Open door and place sample in the center of the chuck.
#Turn on vacuum and close door.
#Click on sample from the top menu bar and select manual load. Visually verify the sample is under the stylus. If it is not, unload and reposition sample.
#From the main Profiler screen, select scan recipe.
#Single click a scan recipe based on the total height of the structure to be measured.
#Select the xy icon.
#Select Focus. This will lower the stylus and focus on the sample.
#Use the arrow buttons on the screen to center sample measurement area. You can also double click on the area to be scanned to center it.
#Drag the blue cursor left to right or right to left across feature to be profiled. The arrow shows the scan direction and length of scan.
#Select start. Note: The image will shift down during the scan.
#When scan trace appears, select level. Move leveling cursors to flat area and select level again.
#Measurement cursors will appear. Move cursors to desired locations.
#Read the St Height in microns.
#Close window or save data or export graph if needed.
#Select Sample from main menu bar.
#Select manual load.
#Wait for stage to finish moving to load/unload position, open door and switch off vacuum.
#Remove sample and close door.
#Fill out the log-book.

Note: If the stage is not in the load/unload position, click on ''Sample'' from the top menu bar and select ''Manual Load''. The system periodically performs automatic calibration and does not move back to the Load/Unload position afterwards.

E-Beam Evaporation Recipes

2022-03-30T16:18:28Z

Millerski w: /* Materials Table (E-Beam #1) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" align="center" bgcolor="#D0E7FF" |'''Material'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Position'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Hearth / Crucible'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Density'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Z Ratio'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Tooling'''
! width="500" align="center" bgcolor="#D0E7FF" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" align="center" bgcolor="#D0E7FF" |'''Material'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Density, g/cm3'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Z Ratio'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Tooling factor, %'''
! width="100" align="center" bgcolor="#D0E7FF" |'''Comments'''
|-
|Al2O3
|3.97
|0.336
|140.0
|Tony could you please check this?
|-
|CeO2
|7.13
|1.000
|252.0
|Deposition at room temperature (see the details in the following file)
|-
|CeO2
|7.13
|1.000
|117.0
|Deposition at 200 C (see the details in the following file)
|-
|CeO2
|7.13
|1.000
|99.7
|Deposition at 250 C (see the details in the following file)
|-
|GeO2
|6.24
|1.000
|139.0
|
|-
|ITO
|6.43-7.14
|1.000
|139.0
|z ratio unknown
|-
|MgO
|3.58
|0.411
|157.6
|OK
|-
|Si
|2.32
|0.712
|150.0
|
|-
|SiO2
|2.648
|1.000
|157.6
|Density 2.2-2.7 according to thin film deposition tables
|-
|SiOx
|2.13
|0.87
|130.0
|
|-
|SrF2
|4.28
|0.727
|140.0
|
|-
|Ta2O5
|8.2
|0.30
|157.6
|
|-
|TiO2
|4.26
|0.400
|139.0
|
|-
|}

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" align="center" bgcolor="#D0E7FF" |'''Material'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Gun'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Hearth /Crucible'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Process Gain, A/sec/%pwr'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Film Number'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Density, g/cm3'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Z Ratio'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Tooling, %'''
! width="100" align="center" bgcolor="#D0E7FF" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" align="center" bgcolor="#D0E7FF" |'''Material'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Density, g/cm3'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Z Ratio'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Master tooling, %'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Process Gain, A/sec/%pwr'''
! width="100" align="center" bgcolor="#D0E7FF" |'''Comments'''
|-
|Ag
|10.50
|0.529
|110
|10.0
|
|-
|Al
|2.70
|1.080
|110
|6.0
|updated 9/1/2021
|-
|Au
|19.30
|0.381
|120
|10.0
|
|-
|Co
|8.90
|0.343
|150
|5.0
|
|-
|Cr
|7.20
|0.305
|140
|10.0
|
|-
|Fe
|7.86
|0.349
|165
|10.0
|
|-
|Ge
|5.35
|0.516
|126
|10.0
|
|-
|Hf
|13.09
|0.360
|150
|10.0
|
|-
|Ir
|22.40
|0.129
|130
|10.0
|
|-
|Ni
|8.91
|0.331
|150
|5.0
|
|-
|NiCr
|8.50
|0.3258
|140
|10.0
|density and z ratio for Nichrome IV
|-
|NiFe
|8.70
|1.000
|100
|10.0
|
|-
|Pd
|12.038
|0.357
|112
|10.0
|
|-
|Pt
|21.40
|0.245
|130
|10.0
|
|-
|Ru
|12.362
|0.182
|100
|10.0
|
|-
|Ti
|4.50
|0.628
|183
|10.0
|
|-
|Zr
|6.49
|0.600
|150
|10.0
|
|-
|}

Rapid Thermal Processor (SSI Solaris 150)

2022-03-11T21:42:49Z

Millerski w: Added process gasses to the "Detailed Specifications"

{{tool
|super = Bill Millerski
|picture=RTP-Solaris-150.jpg
|type = Thermal Processing
|recipe = Thermal Processing
|toolid = 999
|location = Bay 5
|description = Rapid Thermal Annealing (RTA)
|manufacturer = [http://ssi-rtp.com SSI]
|model = Solaris 150
}}

==About==
The Solaris 150 is a manual loading RTP system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

==Detailed Specificiations==
Wafer handling: Manual loading of wafer into the oven, single wafer processing.

Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.

Ramp up rate: 10-200C per second, user-controllable.

Recommended steady state duration: 0-600 seconds per step.

Ramp down rate: Temperature Dependent, max 150°C per second.

Recommended steady state temperature range: 300C - 1250°C

Thermocouple temperature accuracy: + 2.5C

Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.

Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.

The tool uses the following gasses: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).

 

==Operating Instructions==

*[[SSI Solaris 150 - Operating Procedure|Solaris 150 Operating Procedure]]
*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

E-Beam Evaporation Recipes

2022-03-11T16:59:33Z

Millerski w: Updated pocket numbers and tooling factors to match new e-gun crucible.

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" align="center" bgcolor="#D0E7FF" |'''Material'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Position'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Hearth / Crucible'''
! width="85" align="center" bgcolor="#D0E7FF" |'''Film Number'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Density'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Z Ratio'''
! width="75" align="center" bgcolor="#D0E7FF" |'''Tooling'''
! width="500" align="center" bgcolor="#D0E7FF" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|5
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|6
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|6
|3.97
|0.336
|
|
|-
|Au
|3
|C
|4
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|5
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|1
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|6
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|3
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|6
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|1
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|6
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|6
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|9
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|8
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|6
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|6
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|6
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|6
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|6
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|6
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|3
|4.50
|0.628
|109
|
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" align="center" bgcolor="#D0E7FF" |'''Material'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Density, g/cm3'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Z Ratio'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Tooling factor, %'''
! width="100" align="center" bgcolor="#D0E7FF" |'''Comments'''
|-
|Al2O3
|3.97
|0.336
|140.0
|Tony could you please check this?
|-
|CeO2
|7.13
|1.000
|252.0
|Deposition at room temperature (see the details in the following file)
|-
|CeO2
|7.13
|1.000
|117.0
|Deposition at 200 C (see the details in the following file)
|-
|CeO2
|7.13
|1.000
|99.7
|Deposition at 250 C (see the details in the following file)
|-
|GeO2
|6.24
|1.000
|139.0
|
|-
|ITO
|6.43-7.14
|1.000
|139.0
|z ratio unknown
|-
|MgO
|3.58
|0.411
|157.6
|OK
|-
|Si
|2.32
|0.712
|150.0
|
|-
|SiO2
|2.648
|1.000
|157.6
|Density 2.2-2.7 according to thin film deposition tables
|-
|SiOx
|2.13
|0.87
|130.0
|
|-
|SrF2
|4.28
|0.727
|140.0
|
|-
|Ta2O5
|8.2
|0.30
|157.6
|
|-
|TiO2
|4.26
|0.400
|139.0
|
|-
|}

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" align="center" bgcolor="#D0E7FF" |'''Material'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Gun'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Hearth /Crucible'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Process Gain, A/sec/%pwr'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Film Number'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Density, g/cm3'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Z Ratio'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Tooling, %'''
! width="100" align="center" bgcolor="#D0E7FF" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" align="center" bgcolor="#D0E7FF" |'''Material'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Density, g/cm3'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Z Ratio'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Master tooling, %'''
! width="45" align="center" bgcolor="#D0E7FF" |'''Process Gain, A/sec/%pwr'''
! width="100" align="center" bgcolor="#D0E7FF" |'''Comments'''
|-
|Ag
|10.50
|0.529
|110
|10.0
|
|-
|Al
|2.70
|1.080
|110
|6.0
|updated 9/1/2021
|-
|Au
|19.30
|0.381
|120
|10.0
|
|-
|Co
|8.90
|0.343
|150
|5.0
|
|-
|Cr
|7.20
|0.305
|140
|10.0
|
|-
|Fe
|7.86
|0.349
|165
|10.0
|
|-
|Ge
|5.35
|0.516
|126
|10.0
|
|-
|Hf
|13.09
|0.360
|150
|10.0
|
|-
|Ir
|22.40
|0.129
|130
|10.0
|
|-
|Ni
|8.91
|0.331
|150
|5.0
|
|-
|NiCr
|8.50
|0.3258
|140
|10.0
|density and z ratio for Nichrome IV
|-
|NiFe
|8.70
|1.000
|100
|10.0
|
|-
|Pd
|12.038
|0.357
|112
|10.0
|
|-
|Pt
|21.40
|0.245
|130
|10.0
|
|-
|Ru
|12.362
|0.182
|100
|10.0
|
|-
|Ti
|4.50
|0.628
|183
|10.0
|
|-
|Zr
|6.49
|0.600
|150
|10.0
|
|-
|}