UCSB Nanofab Wiki - User contributions [en]

ICP Etching Recipes

2019-03-19T02:18:39Z

Mitchell: /* Si Etching */

{{recipes|Dry Etching}}

=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=
==High Rate Bosch Etch (DSEIII)==
*[[media:10-Si Etch Bosch DSEIII.pdf|Bosch Process]]
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==
*[[media:10-Si Etch Single Step Smooth Sidewall DSEIII.pdf|Single Step Process]]

=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=
==Si Etching ==
*[[media:SLR - SiVertHF.pdf|SiVertHF]] - Si Vertical Etch using C4F8/SF6/CF4 and resist mask
** Si ER ~ 300-350 nm/, SiO2 ER ~30-35 nm/min
** 89-90 degree etch angle, ie, vertical.
==SiO2 Etching==
* Recipes available, to be characterized/added.

=[[ICP Etch 1 (Panasonic E626I)]]=
==SiO2 Etching (Panasonic 1)==
*[[media:Panasonic1-SiO-Etch.pdf|SiO2 Vertical Etch Recipe Parameters - CHF3 "SiOVert"]]
**Etch rate ≈ 2300Å/min (users must calibrate)
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)
*[[media:Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf|SiO2 CHF3 Etch Variations]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]

==SiNx Etching (Panasonic 1)==
*[[media:Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf|SiNx Etch Rates and Variations - CF4-O2]]

==Al Etch (Panasonic 1)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - Cl2BCl3]]
*[[media:32-Reducing AlCl3 Corrosion with CHF3 plasma.pdf|AlCl3 Erosion Issue and the Solution]]

==Cr Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Cr Etch Recipes - Cl2O2]]

==Ta Etch (Panasonic 1)==
*[[media:104 Ta Etch.pdf|Ta Etch Recipe]] - Cl2/BCl3

==Ti Etch (Panasonic 1)==
*[[media:Panasonic-1-Ti-Etch-Deep-RevA.pdf|Ti Deep Etch Recipes - Cl2Ar]]
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].

==W-TiW Etch (Panasonic 1)==
*[[media:Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf|Ti-TiW Etch Recipes - SF6Ar]]

==GaAs-AlGaAs Etch (Panasonic 1)==
*[[media:Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf|GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar]]
*[[media:12-Plasma Etching of AlGaAs-Panasonic ICP-1-Etcher.pdf|AlGaAs Etch Recipes - Cl2N2]]
*[[media:Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf|GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation]]

==GaN Etch (Panasonic 1)==
*[[media:07-GaN Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl2N2]]
*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl3-SF6]]

== Photoresist and ARC Etching ==
[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply.

Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.

==SiC Etch (Panasonic 1)==
*[[media:Panasonic 1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf|SiC Etch Recipes Ni Mask - SF6]]

==Sapphire Etch (Panasonic 1)==
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl3-Cl2]]

== Old Deleted Recipes ==
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.

If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.

=[[ICP Etch 2 (Panasonic E640)]]=
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

==SiO2 Etching (Panasonic 2)==
*[[media:Panasonic2-SiOx-Recipe.pdf|SiO2 Vertical Etch Recipe - CHF3 "SiOVert"]]
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].
*[[media:33-Etching SiO2 with Vertical Side-wall.pdf|SiO2 Vertical Etch Recipe#2 - CF4/CHF3]]
*[[media:Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf|SiO2 Nanoscale Etch Recipe - CHF3/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4]]
*[https://www.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]

==SiNx Etching (Panasonic 2)==
*[[media:Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf|SiNx Nanoscale Etch Recipe - CHF3/O2]]

==Al Etch (Panasonic 2)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]]

== Al2O3 Etching (Panasonic 2) ==
[[:Media:Brian Markman - Al2O3 ICP2 Etch Rates 2018.pdf|ALD Al2O3 Etch Rates in BCl3 Chemistry]] (click for plots of etch rate)

''Contributed by Brian Markman, 2018''
* BCl3 = 30sccm
* Pressure = 0.50 Pa
* ICP Source RF = 500
* Bias RF = 50W or 250W (250W can burn PR)
* Cooling He Flow/Pressure = 15.0 sccm / 400 Pa
* Etch Rate 50W: 0.66nm/sec
* Etch Rate 250W: 1.0 nm/sec

==GaAs Etch (Panasonic 2)==
*[[media:16-GaAs etch-ICP-2.pdf|GaAs Etch Recipes - Panasonic 2 - Cl2N2]]

== Photoresist and ARC etching ==
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:

=== ARC Etching: DUV-42P or AR6 ===
* O2 = 40 sccm // 0.5 Pa
* ICP = 75W // RF = 75W
* 45 sec for full etching of DUV-42P (same for AR6)

=== UV6-0.8 Etching ===
Works very well for photoresist stripping
* O2 = 40 sccm // 1.0 Pa
* ICP = 350W // RF = 100W
* Etch Rate = 518.5nm / 1min
* 2m30sec to fully remove with ~200% overetch

=[[ICP-Etch (Unaxis VLR)]]=
==GaAs-AlGaAs Etch (Unaxis VLR) ==
*[[media:15-GaAs etch-Unaxis ICP etcher.pdf|GaAs Etch Recipe (Cl2N2 30C)]]
*[[media:14-AlAs-GR-cal etch-Unaxis ICP etcher.pdf|AlGaAs Etch Recipe (Cl2N2 30C)]]

==InP-InGaAs-InAlAs Etch (Unaxis VLR)==
*[[media:18-InP-based etching-Cl2N2Ar.pdf|InP-based Material Etch Profile (Cl2N2Ar200C)]]
*[[media:17-InP&InGaAs etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl2H2Ar 200C)]]
*[[media:SiO2-Mask Etch Recipe for Unaxis Cl2 Etch.pdf|Recipe of Etching SiO2 Mask for Cl2 Etch (ICP#2)]]
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl2H2Ar 200C)]]
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]
*[[media:Lower-Etch-Rate InP Etch using Unaxis PM1 tool at 200 C.pdf|Lower etch-rate InP Etch (Cl2N2 200C)]]

==GaN Etch (Unaxis VLR)==
*[[media:09-Plasma Etching of GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl2BCl3N2Ar 85C)]]

==GaSb Etch (Unaxis VLR)==

=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.

==Bosch and Release Etch (Si Deep RIE)==
*[[media:10-Si Etch Bosch Release DRIE.pdf|Bosch and Release Processes]]
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
**Etch rate depends on area of exposed silicon being etched.
**Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
**SiO2 (PECVD) mask has ~100:1 selectivity
**Thermal SiO2 has ~300:1 selectivity.
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe - SF6-C4F8-Ar]]

ICP Etching Recipes

2019-03-19T02:17:41Z

Mitchell: Added Ta etch recipe

{{recipes|Dry Etching}}

=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=
==High Rate Bosch Etch (DSEIII)==
*[[media:10-Si Etch Bosch DSEIII.pdf|Bosch Process]]
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==
*[[media:10-Si Etch Single Step Smooth Sidewall DSEIII.pdf|Single Step Process]]

=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=
==Si Etching ==
*[[media:SLR - SiVertHF.pdf|SiVertHF]] - Si Vertical Etch using C4F8/SF6/CF4
** Si ER ~ 300-350 nm/, SiO2 ER ~30-35 nm/min
** 89-90 degree etch angle, ie, vertical.
==SiO2 Etching==
* Recipes available, to be characterized/added.

=[[ICP Etch 1 (Panasonic E626I)]]=
==SiO2 Etching (Panasonic 1)==
*[[media:Panasonic1-SiO-Etch.pdf|SiO2 Vertical Etch Recipe Parameters - CHF3 "SiOVert"]]
**Etch rate ≈ 2300Å/min (users must calibrate)
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)
*[[media:Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf|SiO2 CHF3 Etch Variations]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]

==SiNx Etching (Panasonic 1)==
*[[media:Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf|SiNx Etch Rates and Variations - CF4-O2]]

==Al Etch (Panasonic 1)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - Cl2BCl3]]
*[[media:32-Reducing AlCl3 Corrosion with CHF3 plasma.pdf|AlCl3 Erosion Issue and the Solution]]

==Cr Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Cr Etch Recipes - Cl2O2]]

==Ta Etch (Panasonic 1)==
*[[media:104_Ta_Etch.pdf|Ta Etch Recipe]] - Cl2/BCl3

==Ti Etch (Panasonic 1)==
*[[media:Panasonic-1-Ti-Etch-Deep-RevA.pdf|Ti Deep Etch Recipes - Cl2Ar]]
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].

==W-TiW Etch (Panasonic 1)==
*[[media:Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf|Ti-TiW Etch Recipes - SF6Ar]]

==GaAs-AlGaAs Etch (Panasonic 1)==
*[[media:Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf|GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar]]
*[[media:12-Plasma Etching of AlGaAs-Panasonic ICP-1-Etcher.pdf|AlGaAs Etch Recipes - Cl2N2]]
*[[media:Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf|GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation]]

==GaN Etch (Panasonic 1)==
*[[media:07-GaN Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl2N2]]
*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl3-SF6]]

== Photoresist and ARC Etching ==
[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply.

Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.

==SiC Etch (Panasonic 1)==
*[[media:Panasonic 1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf|SiC Etch Recipes Ni Mask - SF6]]

==Sapphire Etch (Panasonic 1)==
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl3-Cl2]]

== Old Deleted Recipes ==
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.

If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.

=[[ICP Etch 2 (Panasonic E640)]]=
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

==SiO2 Etching (Panasonic 2)==
*[[media:Panasonic2-SiOx-Recipe.pdf|SiO2 Vertical Etch Recipe - CHF3 "SiOVert"]]
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].
*[[media:33-Etching SiO2 with Vertical Side-wall.pdf|SiO2 Vertical Etch Recipe#2 - CF4/CHF3]]
*[[media:Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf|SiO2 Nanoscale Etch Recipe - CHF3/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4]]
*[https://www.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]

==SiNx Etching (Panasonic 2)==
*[[media:Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf|SiNx Nanoscale Etch Recipe - CHF3/O2]]

==Al Etch (Panasonic 2)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]]

== Al2O3 Etching (Panasonic 2) ==
[[:Media:Brian Markman - Al2O3 ICP2 Etch Rates 2018.pdf|ALD Al2O3 Etch Rates in BCl3 Chemistry]] (click for plots of etch rate)

''Contributed by Brian Markman, 2018''
* BCl3 = 30sccm
* Pressure = 0.50 Pa
* ICP Source RF = 500
* Bias RF = 50W or 250W (250W can burn PR)
* Cooling He Flow/Pressure = 15.0 sccm / 400 Pa
* Etch Rate 50W: 0.66nm/sec
* Etch Rate 250W: 1.0 nm/sec

==GaAs Etch (Panasonic 2)==
*[[media:16-GaAs etch-ICP-2.pdf|GaAs Etch Recipes - Panasonic 2 - Cl2N2]]

== Photoresist and ARC etching ==
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:

=== ARC Etching: DUV-42P or AR6 ===
* O2 = 40 sccm // 0.5 Pa
* ICP = 75W // RF = 75W
* 45 sec for full etching of DUV-42P (same for AR6)

=== UV6-0.8 Etching ===
Works very well for photoresist stripping
* O2 = 40 sccm // 1.0 Pa
* ICP = 350W // RF = 100W
* Etch Rate = 518.5nm / 1min
* 2m30sec to fully remove with ~200% overetch

=[[ICP-Etch (Unaxis VLR)]]=
==GaAs-AlGaAs Etch (Unaxis VLR) ==
*[[media:15-GaAs etch-Unaxis ICP etcher.pdf|GaAs Etch Recipe (Cl2N2 30C)]]
*[[media:14-AlAs-GR-cal etch-Unaxis ICP etcher.pdf|AlGaAs Etch Recipe (Cl2N2 30C)]]

==InP-InGaAs-InAlAs Etch (Unaxis VLR)==
*[[media:18-InP-based etching-Cl2N2Ar.pdf|InP-based Material Etch Profile (Cl2N2Ar200C)]]
*[[media:17-InP&InGaAs etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl2H2Ar 200C)]]
*[[media:SiO2-Mask Etch Recipe for Unaxis Cl2 Etch.pdf|Recipe of Etching SiO2 Mask for Cl2 Etch (ICP#2)]]
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl2H2Ar 200C)]]
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]
*[[media:Lower-Etch-Rate InP Etch using Unaxis PM1 tool at 200 C.pdf|Lower etch-rate InP Etch (Cl2N2 200C)]]

==GaN Etch (Unaxis VLR)==
*[[media:09-Plasma Etching of GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl2BCl3N2Ar 85C)]]

==GaSb Etch (Unaxis VLR)==

=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.

==Bosch and Release Etch (Si Deep RIE)==
*[[media:10-Si Etch Bosch Release DRIE.pdf|Bosch and Release Processes]]
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
**Etch rate depends on area of exposed silicon being etched.
**Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
**SiO2 (PECVD) mask has ~100:1 selectivity
**Thermal SiO2 has ~300:1 selectivity.
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe - SF6-C4F8-Ar]]

File:104 Ta Etch.pdf

2019-03-19T02:17:03Z

Mitchell:

ICP Etching Recipes

2019-03-19T02:16:26Z

Mitchell: /* Ta Etch (Panasonic 1) */

{{recipes|Dry Etching}}

=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=
==High Rate Bosch Etch (DSEIII)==
*[[media:10-Si Etch Bosch DSEIII.pdf|Bosch Process]]
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==
*[[media:10-Si Etch Single Step Smooth Sidewall DSEIII.pdf|Single Step Process]]

=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=
==Si Etching ==
*[[media:SLR - SiVertHF.pdf|SiVertHF]] - Si Vertical Etch using C4F8/SF6/CF4
** Si ER ~ 300-350 nm/, SiO2 ER ~30-35 nm/min
** 89-90 degree etch angle, ie, vertical.
==SiO2 Etching==
* Recipes available, to be characterized/added.

=[[ICP Etch 1 (Panasonic E626I)]]=
==SiO2 Etching (Panasonic 1)==
*[[media:Panasonic1-SiO-Etch.pdf|SiO2 Vertical Etch Recipe Parameters - CHF3 "SiOVert"]]
**Etch rate ≈ 2300Å/min (users must calibrate)
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)
*[[media:Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf|SiO2 CHF3 Etch Variations]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]

==SiNx Etching (Panasonic 1)==
*[[media:Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf|SiNx Etch Rates and Variations - CF4-O2]]

==Al Etch (Panasonic 1)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - Cl2BCl3]]
*[[media:32-Reducing AlCl3 Corrosion with CHF3 plasma.pdf|AlCl3 Erosion Issue and the Solution]]

==Cr Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Cr Etch Recipes - Cl2O2]]

==Ta Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Ta Etch Recipe]] - Cl2/BCl3

==Ti Etch (Panasonic 1)==
*[[media:Panasonic-1-Ti-Etch-Deep-RevA.pdf|Ti Deep Etch Recipes - Cl2Ar]]
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].

==W-TiW Etch (Panasonic 1)==
*[[media:Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf|Ti-TiW Etch Recipes - SF6Ar]]

==GaAs-AlGaAs Etch (Panasonic 1)==
*[[media:Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf|GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar]]
*[[media:12-Plasma Etching of AlGaAs-Panasonic ICP-1-Etcher.pdf|AlGaAs Etch Recipes - Cl2N2]]
*[[media:Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf|GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation]]

==GaN Etch (Panasonic 1)==
*[[media:07-GaN Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl2N2]]
*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl3-SF6]]

== Photoresist and ARC Etching ==
[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply.

Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.

==SiC Etch (Panasonic 1)==
*[[media:Panasonic 1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf|SiC Etch Recipes Ni Mask - SF6]]

==Sapphire Etch (Panasonic 1)==
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl3-Cl2]]

== Old Deleted Recipes ==
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.

If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.

=[[ICP Etch 2 (Panasonic E640)]]=
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

==SiO2 Etching (Panasonic 2)==
*[[media:Panasonic2-SiOx-Recipe.pdf|SiO2 Vertical Etch Recipe - CHF3 "SiOVert"]]
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].
*[[media:33-Etching SiO2 with Vertical Side-wall.pdf|SiO2 Vertical Etch Recipe#2 - CF4/CHF3]]
*[[media:Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf|SiO2 Nanoscale Etch Recipe - CHF3/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4]]
*[https://www.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]

==SiNx Etching (Panasonic 2)==
*[[media:Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf|SiNx Nanoscale Etch Recipe - CHF3/O2]]

==Al Etch (Panasonic 2)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]]

== Al2O3 Etching (Panasonic 2) ==
[[:Media:Brian Markman - Al2O3 ICP2 Etch Rates 2018.pdf|ALD Al2O3 Etch Rates in BCl3 Chemistry]] (click for plots of etch rate)

''Contributed by Brian Markman, 2018''
* BCl3 = 30sccm
* Pressure = 0.50 Pa
* ICP Source RF = 500
* Bias RF = 50W or 250W (250W can burn PR)
* Cooling He Flow/Pressure = 15.0 sccm / 400 Pa
* Etch Rate 50W: 0.66nm/sec
* Etch Rate 250W: 1.0 nm/sec

==GaAs Etch (Panasonic 2)==
*[[media:16-GaAs etch-ICP-2.pdf|GaAs Etch Recipes - Panasonic 2 - Cl2N2]]

== Photoresist and ARC etching ==
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:

=== ARC Etching: DUV-42P or AR6 ===
* O2 = 40 sccm // 0.5 Pa
* ICP = 75W // RF = 75W
* 45 sec for full etching of DUV-42P (same for AR6)

=== UV6-0.8 Etching ===
Works very well for photoresist stripping
* O2 = 40 sccm // 1.0 Pa
* ICP = 350W // RF = 100W
* Etch Rate = 518.5nm / 1min
* 2m30sec to fully remove with ~200% overetch

=[[ICP-Etch (Unaxis VLR)]]=
==GaAs-AlGaAs Etch (Unaxis VLR) ==
*[[media:15-GaAs etch-Unaxis ICP etcher.pdf|GaAs Etch Recipe (Cl2N2 30C)]]
*[[media:14-AlAs-GR-cal etch-Unaxis ICP etcher.pdf|AlGaAs Etch Recipe (Cl2N2 30C)]]

==InP-InGaAs-InAlAs Etch (Unaxis VLR)==
*[[media:18-InP-based etching-Cl2N2Ar.pdf|InP-based Material Etch Profile (Cl2N2Ar200C)]]
*[[media:17-InP&InGaAs etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl2H2Ar 200C)]]
*[[media:SiO2-Mask Etch Recipe for Unaxis Cl2 Etch.pdf|Recipe of Etching SiO2 Mask for Cl2 Etch (ICP#2)]]
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl2H2Ar 200C)]]
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]
*[[media:Lower-Etch-Rate InP Etch using Unaxis PM1 tool at 200 C.pdf|Lower etch-rate InP Etch (Cl2N2 200C)]]

==GaN Etch (Unaxis VLR)==
*[[media:09-Plasma Etching of GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl2BCl3N2Ar 85C)]]

==GaSb Etch (Unaxis VLR)==

=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.

==Bosch and Release Etch (Si Deep RIE)==
*[[media:10-Si Etch Bosch Release DRIE.pdf|Bosch and Release Processes]]
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
**Etch rate depends on area of exposed silicon being etched.
**Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
**SiO2 (PECVD) mask has ~100:1 selectivity
**Thermal SiO2 has ~300:1 selectivity.
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe - SF6-C4F8-Ar]]

ICP Etching Recipes

2019-03-19T02:14:25Z

Mitchell: Adding Ta etch

{{recipes|Dry Etching}}

=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=
==High Rate Bosch Etch (DSEIII)==
*[[media:10-Si Etch Bosch DSEIII.pdf|Bosch Process]]
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==
*[[media:10-Si Etch Single Step Smooth Sidewall DSEIII.pdf|Single Step Process]]

=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=
==Si Etching ==
*[[media:SLR_-_SiVertHF.pdf|SiVertHF]] - Si Vertical Etch using C4F8/SF6/CF4
** Si ER ~ 300-350 nm/, SiO2 ER ~30-35 nm/min
** 89-90 degree etch angle, ie, vertical.
==SiO2 Etching==
* Recipes available, to be characterized/added.

=[[ICP Etch 1 (Panasonic E626I)]]=
==SiO2 Etching (Panasonic 1)==
*[[media:Panasonic1-SiO-Etch.pdf|SiO2 Vertical Etch Recipe Parameters - CHF3 "SiOVert"]]
**Etch rate ≈ 2300Å/min (users must calibrate)
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)
*[[media:Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf|SiO2 CHF3 Etch Variations]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]

==SiNx Etching (Panasonic 1)==
*[[media:Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf|SiNx Etch Rates and Variations - CF4-O2]]

==Al Etch (Panasonic 1)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - Cl2BCl3]]
*[[media:32-Reducing AlCl3 Corrosion with CHF3 plasma.pdf|AlCl3 Erosion Issue and the Solution]]

==Cr Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Cr Etch Recipes - Cl2O2]]

==Ta Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Cr Etch Recipes - Cl2O2]]

==Ti Etch (Panasonic 1)==
*[[media:Panasonic-1-Ti-Etch-Deep-RevA.pdf|Ti Deep Etch Recipes - Cl2Ar]]
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].

==W-TiW Etch (Panasonic 1)==
*[[media:Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf|Ti-TiW Etch Recipes - SF6Ar]]

==GaAs-AlGaAs Etch (Panasonic 1)==
*[[media:Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf|GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar]]
*[[media:12-Plasma Etching of AlGaAs-Panasonic ICP-1-Etcher.pdf|AlGaAs Etch Recipes - Cl2N2]]
*[[media:Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf|GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation]]

==GaN Etch (Panasonic 1)==
*[[media:07-GaN Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl2N2]]
*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl3-SF6]]

== Photoresist and ARC Etching ==
[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply.

Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.

==SiC Etch (Panasonic 1)==
*[[media:Panasonic 1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf|SiC Etch Recipes Ni Mask - SF6]]

==Sapphire Etch (Panasonic 1)==
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl3-Cl2]]

== Old Deleted Recipes ==
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.

If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.

=[[ICP Etch 2 (Panasonic E640)]]=
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

==SiO2 Etching (Panasonic 2)==
*[[media:Panasonic2-SiOx-Recipe.pdf|SiO2 Vertical Etch Recipe - CHF3 "SiOVert"]]
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].
*[[media:33-Etching SiO2 with Vertical Side-wall.pdf|SiO2 Vertical Etch Recipe#2 - CF4/CHF3]]
*[[media:Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf|SiO2 Nanoscale Etch Recipe - CHF3/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4]]
*[https://www.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]

==SiNx Etching (Panasonic 2)==
*[[media:Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf|SiNx Nanoscale Etch Recipe - CHF3/O2]]

==Al Etch (Panasonic 2)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]]

== Al2O3 Etching (Panasonic 2) ==
[[:Media:Brian Markman - Al2O3 ICP2 Etch Rates 2018.pdf|ALD Al2O3 Etch Rates in BCl3 Chemistry]] (click for plots of etch rate)

''Contributed by Brian Markman, 2018''
* BCl3 = 30sccm
* Pressure = 0.50 Pa
* ICP Source RF = 500
* Bias RF = 50W or 250W (250W can burn PR)
* Cooling He Flow/Pressure = 15.0 sccm / 400 Pa
* Etch Rate 50W: 0.66nm/sec
* Etch Rate 250W: 1.0 nm/sec

==GaAs Etch (Panasonic 2)==
*[[media:16-GaAs etch-ICP-2.pdf|GaAs Etch Recipes - Panasonic 2 - Cl2N2]]

== Photoresist and ARC etching ==
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:

=== ARC Etching: DUV-42P or AR6 ===
* O2 = 40 sccm // 0.5 Pa
* ICP = 75W // RF = 75W
* 45 sec for full etching of DUV-42P (same for AR6)

=== UV6-0.8 Etching ===
Works very well for photoresist stripping
* O2 = 40 sccm // 1.0 Pa
* ICP = 350W // RF = 100W
* Etch Rate = 518.5nm / 1min
* 2m30sec to fully remove with ~200% overetch

=[[ICP-Etch (Unaxis VLR)]]=
==GaAs-AlGaAs Etch (Unaxis VLR) ==
*[[media:15-GaAs etch-Unaxis ICP etcher.pdf|GaAs Etch Recipe (Cl2N2 30C)]]
*[[media:14-AlAs-GR-cal etch-Unaxis ICP etcher.pdf|AlGaAs Etch Recipe (Cl2N2 30C)]]

==InP-InGaAs-InAlAs Etch (Unaxis VLR)==
*[[media:18-InP-based etching-Cl2N2Ar.pdf|InP-based Material Etch Profile (Cl2N2Ar200C)]]
*[[media:17-InP&InGaAs etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl2H2Ar 200C)]]
*[[media:SiO2-Mask Etch Recipe for Unaxis Cl2 Etch.pdf|Recipe of Etching SiO2 Mask for Cl2 Etch (ICP#2)]]
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl2H2Ar 200C)]]
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]
*[[media:Lower-Etch-Rate InP Etch using Unaxis PM1 tool at 200 C.pdf|Lower etch-rate InP Etch (Cl2N2 200C)]]

==GaN Etch (Unaxis VLR)==
*[[media:09-Plasma Etching of GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl2BCl3N2Ar 85C)]]

==GaSb Etch (Unaxis VLR)==

=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.

==Bosch and Release Etch (Si Deep RIE)==
*[[media:10-Si Etch Bosch Release DRIE.pdf|Bosch and Release Processes]]
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
**Etch rate depends on area of exposed silicon being etched.
**Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
**SiO2 (PECVD) mask has ~100:1 selectivity
**Thermal SiO2 has ~300:1 selectivity.
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe - SF6-C4F8-Ar]]

File:SLR - SiVertHF.pdf

2019-03-19T02:08:20Z

Mitchell: Mitchell uploaded a new version of File:SLR - SiVertHF.pdf

ICP Etching Recipes

2019-03-19T02:03:36Z

Mitchell: Added SiVertHF pdf file and link

{{recipes|Dry Etching}}

=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=
==High Rate Bosch Etch (DSEIII)==
*[[media:10-Si Etch Bosch DSEIII.pdf|Bosch Process]]
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==
*[[media:10-Si Etch Single Step Smooth Sidewall DSEIII.pdf|Single Step Process]]

=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=
==Si Etching ==
*[[media:SLR_-_SiVertHF.pdf|SiVertHF]] - Si Vertical Etch using C4F8/SF6/CF4
** Si ER ~ 300-350 nm/, SiO2 ER ~30-35 nm/min
** 89-90 degree etch angle, ie, vertical.
==SiO2 Etching==
* Recipes available, to be characterized/added.

=[[ICP Etch 1 (Panasonic E626I)]]=
==SiO2 Etching (Panasonic 1)==
*[[media:Panasonic1-SiO-Etch.pdf|SiO2 Vertical Etch Recipe Parameters - CHF3 "SiOVert"]]
**Etch rate ≈ 2300Å/min (users must calibrate)
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)
*[[media:Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf|SiO2 CHF3 Etch Variations]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]

==SiNx Etching (Panasonic 1)==
*[[media:Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf|SiNx Etch Rates and Variations - CF4-O2]]

==Al Etch (Panasonic 1)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - Cl2BCl3]]
*[[media:32-Reducing AlCl3 Corrosion with CHF3 plasma.pdf|AlCl3 Erosion Issue and the Solution]]

==Cr Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Cr Etch Recipes - Cl2O2]]

==Ti Etch (Panasonic 1)==
*[[media:Panasonic-1-Ti-Etch-Deep-RevA.pdf|Ti Deep Etch Recipes - Cl2Ar]]
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].

==W-TiW Etch (Panasonic 1)==
*[[media:Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf|Ti-TiW Etch Recipes - SF6Ar]]

==GaAs-AlGaAs Etch (Panasonic 1)==
*[[media:Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf|GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar]]
*[[media:12-Plasma Etching of AlGaAs-Panasonic ICP-1-Etcher.pdf|AlGaAs Etch Recipes - Cl2N2]]
*[[media:Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf|GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation]]

==GaN Etch (Panasonic 1)==
*[[media:07-GaN Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl2N2]]
*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl3-SF6]]

== Photoresist and ARC Etching ==
[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply.

Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.

==SiC Etch (Panasonic 1)==
*[[media:Panasonic 1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf|SiC Etch Recipes Ni Mask - SF6]]

==Sapphire Etch (Panasonic 1)==
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl3-Cl2]]

== Old Deleted Recipes ==
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.

If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.

=[[ICP Etch 2 (Panasonic E640)]]=
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

==SiO2 Etching (Panasonic 2)==
*[[media:Panasonic2-SiOx-Recipe.pdf|SiO2 Vertical Etch Recipe - CHF3 "SiOVert"]]
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].
*[[media:33-Etching SiO2 with Vertical Side-wall.pdf|SiO2 Vertical Etch Recipe#2 - CF4/CHF3]]
*[[media:Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf|SiO2 Nanoscale Etch Recipe - CHF3/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4]]
*[https://www.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]

==SiNx Etching (Panasonic 2)==
*[[media:Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf|SiNx Nanoscale Etch Recipe - CHF3/O2]]

==Al Etch (Panasonic 2)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]]

== Al2O3 Etching (Panasonic 2) ==
[[:Media:Brian Markman - Al2O3 ICP2 Etch Rates 2018.pdf|ALD Al2O3 Etch Rates in BCl3 Chemistry]] (click for plots of etch rate)

''Contributed by Brian Markman, 2018''
* BCl3 = 30sccm
* Pressure = 0.50 Pa
* ICP Source RF = 500
* Bias RF = 50W or 250W (250W can burn PR)
* Cooling He Flow/Pressure = 15.0 sccm / 400 Pa
* Etch Rate 50W: 0.66nm/sec
* Etch Rate 250W: 1.0 nm/sec

==GaAs Etch (Panasonic 2)==
*[[media:16-GaAs etch-ICP-2.pdf|GaAs Etch Recipes - Panasonic 2 - Cl2N2]]

== Photoresist and ARC etching ==
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:

=== ARC Etching: DUV-42P or AR6 ===
* O2 = 40 sccm // 0.5 Pa
* ICP = 75W // RF = 75W
* 45 sec for full etching of DUV-42P (same for AR6)

=== UV6-0.8 Etching ===
Works very well for photoresist stripping
* O2 = 40 sccm // 1.0 Pa
* ICP = 350W // RF = 100W
* Etch Rate = 518.5nm / 1min
* 2m30sec to fully remove with ~200% overetch

=[[ICP-Etch (Unaxis VLR)]]=
==GaAs-AlGaAs Etch (Unaxis VLR) ==
*[[media:15-GaAs etch-Unaxis ICP etcher.pdf|GaAs Etch Recipe (Cl2N2 30C)]]
*[[media:14-AlAs-GR-cal etch-Unaxis ICP etcher.pdf|AlGaAs Etch Recipe (Cl2N2 30C)]]

==InP-InGaAs-InAlAs Etch (Unaxis VLR)==
*[[media:18-InP-based etching-Cl2N2Ar.pdf|InP-based Material Etch Profile (Cl2N2Ar200C)]]
*[[media:17-InP&InGaAs etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl2H2Ar 200C)]]
*[[media:SiO2-Mask Etch Recipe for Unaxis Cl2 Etch.pdf|Recipe of Etching SiO2 Mask for Cl2 Etch (ICP#2)]]
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl2H2Ar 200C)]]
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]
*[[media:Lower-Etch-Rate InP Etch using Unaxis PM1 tool at 200 C.pdf|Lower etch-rate InP Etch (Cl2N2 200C)]]

==GaN Etch (Unaxis VLR)==
*[[media:09-Plasma Etching of GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl2BCl3N2Ar 85C)]]

==GaSb Etch (Unaxis VLR)==

=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.

==Bosch and Release Etch (Si Deep RIE)==
*[[media:10-Si Etch Bosch Release DRIE.pdf|Bosch and Release Processes]]
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
**Etch rate depends on area of exposed silicon being etched.
**Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
**SiO2 (PECVD) mask has ~100:1 selectivity
**Thermal SiO2 has ~300:1 selectivity.
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe - SF6-C4F8-Ar]]

File:SLR - SiVertHF.pdf

2019-03-19T01:53:26Z

Mitchell:

ICP Etching Recipes

2019-03-19T01:46:09Z

Mitchell:

{{recipes|Dry Etching}}

=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=
==High Rate Bosch Etch (DSEIII)==
*[[media:10-Si Etch Bosch DSEIII.pdf|Bosch Process]]
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==
*[[media:10-Si Etch Single Step Smooth Sidewall DSEIII.pdf|Single Step Process]]

=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=
==Si Etching ==
* SiVertHF - Si Vertical Etch using C4F8/SF6/CF4
** Si ER ~ 300-350 nm/min, SiO2 ER ~30-35 nm/min
** 89-90 degree etch angle, ie, vertical.
==SiO2 Etching==
* Recipes available, to be characterized/added.

=[[ICP Etch 1 (Panasonic E626I)]]=
==SiO2 Etching (Panasonic 1)==
*[[media:Panasonic1-SiO-Etch.pdf|SiO2 Vertical Etch Recipe Parameters - CHF3 "SiOVert"]]
**Etch rate ≈ 2300Å/min (users must calibrate)
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)
*[[media:Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf|SiO2 CHF3 Etch Variations]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]

==SiNx Etching (Panasonic 1)==
*[[media:Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf|SiNx Etch Rates and Variations - CF4-O2]]

==Al Etch (Panasonic 1)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - Cl2BCl3]]
*[[media:32-Reducing AlCl3 Corrosion with CHF3 plasma.pdf|AlCl3 Erosion Issue and the Solution]]

==Cr Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Cr Etch Recipes - Cl2O2]]

==Ti Etch (Panasonic 1)==
*[[media:Panasonic-1-Ti-Etch-Deep-RevA.pdf|Ti Deep Etch Recipes - Cl2Ar]]
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].

==W-TiW Etch (Panasonic 1)==
*[[media:Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf|Ti-TiW Etch Recipes - SF6Ar]]

==GaAs-AlGaAs Etch (Panasonic 1)==
*[[media:Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf|GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar]]
*[[media:12-Plasma Etching of AlGaAs-Panasonic ICP-1-Etcher.pdf|AlGaAs Etch Recipes - Cl2N2]]
*[[media:Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf|GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation]]

==GaN Etch (Panasonic 1)==
*[[media:07-GaN Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl2N2]]
*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl3-SF6]]

== Photoresist and ARC Etching ==
[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply.

Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.

==SiC Etch (Panasonic 1)==
*[[media:Panasonic 1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf|SiC Etch Recipes Ni Mask - SF6]]

==Sapphire Etch (Panasonic 1)==
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl3-Cl2]]

== Old Deleted Recipes ==
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.

If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.

=[[ICP Etch 2 (Panasonic E640)]]=
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

==SiO2 Etching (Panasonic 2)==
*[[media:Panasonic2-SiOx-Recipe.pdf|SiO2 Vertical Etch Recipe - CHF3 "SiOVert"]]
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].
*[[media:33-Etching SiO2 with Vertical Side-wall.pdf|SiO2 Vertical Etch Recipe#2 - CF4/CHF3]]
*[[media:Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf|SiO2 Nanoscale Etch Recipe - CHF3/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4]]
*[https://www.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]

==SiNx Etching (Panasonic 2)==
*[[media:Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf|SiNx Nanoscale Etch Recipe - CHF3/O2]]

==Al Etch (Panasonic 2)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]]

== Al2O3 Etching (Panasonic 2) ==
[[:Media:Brian Markman - Al2O3 ICP2 Etch Rates 2018.pdf|ALD Al2O3 Etch Rates in BCl3 Chemistry]] (click for plots of etch rate)

''Contributed by Brian Markman, 2018''
* BCl3 = 30sccm
* Pressure = 0.50 Pa
* ICP Source RF = 500
* Bias RF = 50W or 250W (250W can burn PR)
* Cooling He Flow/Pressure = 15.0 sccm / 400 Pa
* Etch Rate 50W: 0.66nm/sec
* Etch Rate 250W: 1.0 nm/sec

==GaAs Etch (Panasonic 2)==
*[[media:16-GaAs etch-ICP-2.pdf|GaAs Etch Recipes - Panasonic 2 - Cl2N2]]

== Photoresist and ARC etching ==
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:

=== ARC Etching: DUV-42P or AR6 ===
* O2 = 40 sccm // 0.5 Pa
* ICP = 75W // RF = 75W
* 45 sec for full etching of DUV-42P (same for AR6)

=== UV6-0.8 Etching ===
Works very well for photoresist stripping
* O2 = 40 sccm // 1.0 Pa
* ICP = 350W // RF = 100W
* Etch Rate = 518.5nm / 1min
* 2m30sec to fully remove with ~200% overetch

=[[ICP-Etch (Unaxis VLR)]]=
==GaAs-AlGaAs Etch (Unaxis VLR) ==
*[[media:15-GaAs etch-Unaxis ICP etcher.pdf|GaAs Etch Recipe (Cl2N2 30C)]]
*[[media:14-AlAs-GR-cal etch-Unaxis ICP etcher.pdf|AlGaAs Etch Recipe (Cl2N2 30C)]]

==InP-InGaAs-InAlAs Etch (Unaxis VLR)==
*[[media:18-InP-based etching-Cl2N2Ar.pdf|InP-based Material Etch Profile (Cl2N2Ar200C)]]
*[[media:17-InP&InGaAs etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl2H2Ar 200C)]]
*[[media:SiO2-Mask Etch Recipe for Unaxis Cl2 Etch.pdf|Recipe of Etching SiO2 Mask for Cl2 Etch (ICP#2)]]
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl2H2Ar 200C)]]
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]
*[[media:Lower-Etch-Rate InP Etch using Unaxis PM1 tool at 200 C.pdf|Lower etch-rate InP Etch (Cl2N2 200C)]]

==GaN Etch (Unaxis VLR)==
*[[media:09-Plasma Etching of GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl2BCl3N2Ar 85C)]]

==GaSb Etch (Unaxis VLR)==

=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.

==Bosch and Release Etch (Si Deep RIE)==
*[[media:10-Si Etch Bosch Release DRIE.pdf|Bosch and Release Processes]]
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
**Etch rate depends on area of exposed silicon being etched.
**Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
**SiO2 (PECVD) mask has ~100:1 selectivity
**Thermal SiO2 has ~300:1 selectivity.
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe - SF6-C4F8-Ar]]

ICP Etching Recipes

2019-03-19T01:42:04Z

Mitchell: /* Si Single-Step Etching */

{{recipes|Dry Etching}}

=[[DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)]]=
==High Rate Bosch Etch (DSEIII)==
*[[media:10-Si Etch Bosch DSEIII.pdf|Bosch Process]]
==Single-Step Low Etch Rate Smooth Sidewall Process (DSEIII)==
*[[media:10-Si Etch Single Step Smooth Sidewall DSEIII.pdf|Single Step Process]]

=[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|PlasmaTherm/SLR Fluorine Etcher]]=
==Si Etching ==
* SiVertHF - Si Vertical Etch using C4F8/SF6/CF4
** Si ER ~ 300-350nm/min, SiO2 ER ~30-35nm/min
** 89-90 degree etch angle, ie, vertical.
==SiO2 Etching==
* Recipes available, to be characterized/added.

=[[ICP Etch 1 (Panasonic E626I)]]=
==SiO2 Etching (Panasonic 1)==
*[[media:Panasonic1-SiO-Etch.pdf|SiO2 Vertical Etch Recipe Parameters - CHF3 "SiOVert"]]
**Etch rate ≈ 2300Å/min (users must calibrate)
**Selectivity (SiO2:Photoresist) ≈ greater than 1:1 (users must calibrate)
*[[media:Panasonic1-SiO2-Data-Process-Variation-CHF3-revA.pdf|SiO2 CHF3 Etch Variations]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Florine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|Test Data of etching SiO2 with CHF3/CF4]]

==SiNx Etching (Panasonic 1)==
*[[media:Panasonic1-SiN-Etch-Plasma-CF4-O2-ICP-revA.pdf|SiNx Etch Rates and Variations - CF4-O2]]

==Al Etch (Panasonic 1)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - Cl2BCl3]]
*[[media:32-Reducing AlCl3 Corrosion with CHF3 plasma.pdf|AlCl3 Erosion Issue and the Solution]]

==Cr Etch (Panasonic 1)==
*[[media:Panasonic-1-Cr-Etch-revA.pdf|Cr Etch Recipes - Cl2O2]]

==Ti Etch (Panasonic 1)==
*[[media:Panasonic-1-Ti-Etch-Deep-RevA.pdf|Ti Deep Etch Recipes - Cl2Ar]]
**See [[doi:10.1149/1.2006647|E. Parker, ''et. al.'' Jnl. Electrochem. Soc., 152 (10) C675-C683 2005]].

==W-TiW Etch (Panasonic 1)==
*[[media:Panasonic1-TiW-W-Etch-Plasma-RIE-RevA.pdf|Ti-TiW Etch Recipes - SF6Ar]]

==GaAs-AlGaAs Etch (Panasonic 1)==
*[[media:Panasonic1-GaAs-PhotonicCrystal-RIE-Plasma-Nanoscale-Etch-RevA.pdf|GaAs-Nanoscale Etch Recipe - PR mask - Cl2-BCl3-Ar]]
*[[media:12-Plasma Etching of AlGaAs-Panasonic ICP-1-Etcher.pdf|AlGaAs Etch Recipes - Cl2N2]]
*[[media:Panasonic1-GaAs-Via-Etch-Plasma-RIE-Fast-DRIE-RevA.pdf|GaAs DRIE via Etch Recipes - Cl2-BCl3-Ar PR passivation]]

==GaN Etch (Panasonic 1)==
*[[media:07-GaN Etch-Panasonic-ICP-1.pdf|GaN Etch Recipes Cl2N2]]
*[[media:Panasonic1-GaN-AlGaN-Selective-Etch-Plasma-RIE-ICP-RevA.pdf|GaN Selective Etch over AlGaN Recipes BCl3-SF6]]

== Photoresist and ARC Etching ==
[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 Please see the recipes for Panasonic ICP#2] - the same recipes apply.

Etching of DUV42P at standard spin/bake parameters also completes in 45 seconds.

==SiC Etch (Panasonic 1)==
*[[media:Panasonic 1-SiC-ICP-RIE-Etch-Plasma-SF6-RevA.pdf|SiC Etch Recipes Ni Mask - SF6]]

==Sapphire Etch (Panasonic 1)==
*[[media:Panasonic1-sapphire-etch-RIE-Plasma-BCl3-ICP-RevA.pdf|Sapphire Etch Recipes Ni and PR Mask - BCl3-Cl2]]

== Old Deleted Recipes ==
Since there are a limited number of recipe slots on the tool, we occasionally have to delete old, unused recipes.

If you need to free up a recipe slot, please contact [[Don Freeborn|Don]] and he'll help you find an old recipe to replace. We take photographs of old recipes, and save them in case a group needs to revive the recipe. Contact us if your old recipe went missing.

=[[ICP Etch 2 (Panasonic E640)]]=
Recipes starting points for materials without processes listed can be obtained from Panasonic1 recipe files. The chambers are slightly different, but essentially the same, requiring only small program changes to obtain similar results.

==SiO2 Etching (Panasonic 2)==
*[[media:Panasonic2-SiOx-Recipe.pdf|SiO2 Vertical Etch Recipe - CHF3 "SiOVert"]]
**Direct copy of "SiOVert" from ICP#1, [[ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_1.29|see parameters there]].
*[[media:33-Etching SiO2 with Vertical Side-wall.pdf|SiO2 Vertical Etch Recipe#2 - CF4/CHF3]]
*[[media:Panasonic2-ICP-Plasma-Etch-SiO2-nanoscale-rev1.pdf|SiO2 Nanoscale Etch Recipe - CHF3/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
*[[Test Data of etching SiO2 with CHF3/CF4]]
*[https://www.nanotech.ucsb.edu/wiki/images/1/1e/05-SiO2_Nano-structure_Etch.pdf Angled SiO2 sidewall recipe]

==SiNx Etching (Panasonic 2)==
*[[media:Panasonic2-ICP-Plasma-Etch-SiN-nanoscale-rev1.pdf|SiNx Nanoscale Etch Recipe - CHF3/O2]]

==Al Etch (Panasonic 2)==
*[[media:Panasonic-1-Al-Etch-RevA.pdf|Al Etch Recipes - use panasonic 1 parameters, etch rate 50% higher]]

== Al2O3 Etching (Panasonic 2) ==
[[:Media:Brian Markman - Al2O3 ICP2 Etch Rates 2018.pdf|ALD Al2O3 Etch Rates in BCl3 Chemistry]] (click for plots of etch rate)

''Contributed by Brian Markman, 2018''
* BCl3 = 30sccm
* Pressure = 0.50 Pa
* ICP Source RF = 500
* Bias RF = 50W or 250W (250W can burn PR)
* Cooling He Flow/Pressure = 15.0 sccm / 400 Pa
* Etch Rate 50W: 0.66nm/sec
* Etch Rate 250W: 1.0 nm/sec

==GaAs Etch (Panasonic 2)==
*[[media:16-GaAs etch-ICP-2.pdf|GaAs Etch Recipes - Panasonic 2 - Cl2N2]]

== Photoresist and ARC etching ==
Basic recipes for etching photoresist and Bottom Anti-Reflection Coating (BARC) underlayers are as follows:

=== ARC Etching: DUV-42P or AR6 ===
* O2 = 40 sccm // 0.5 Pa
* ICP = 75W // RF = 75W
* 45 sec for full etching of DUV-42P (same for AR6)

=== UV6-0.8 Etching ===
Works very well for photoresist stripping
* O2 = 40 sccm // 1.0 Pa
* ICP = 350W // RF = 100W
* Etch Rate = 518.5nm / 1min
* 2m30sec to fully remove with ~200% overetch

=[[ICP-Etch (Unaxis VLR)]]=
==GaAs-AlGaAs Etch (Unaxis VLR) ==
*[[media:15-GaAs etch-Unaxis ICP etcher.pdf|GaAs Etch Recipe (Cl2N2 30C)]]
*[[media:14-AlAs-GR-cal etch-Unaxis ICP etcher.pdf|AlGaAs Etch Recipe (Cl2N2 30C)]]

==InP-InGaAs-InAlAs Etch (Unaxis VLR)==
*[[media:18-InP-based etching-Cl2N2Ar.pdf|InP-based Material Etch Profile (Cl2N2Ar200C)]]
*[[media:17-InP&InGaAs etch-Cl2H2Ar-Unaxis-VLR.pdf|InP-InGaAs Etch Profile (Cl2H2Ar 200C)]]
*[[media:SiO2-Mask Etch Recipe for Unaxis Cl2 Etch.pdf|Recipe of Etching SiO2 Mask for Cl2 Etch (ICP#2)]]
*[[InP Etch Test Result in Details|InP Etch Historical Data (Cl2H2Ar 200C)]]
*[[InP Etch Rate and Selectivity (InP/SiO2)|InP Etch Test]]
*[[media:Lower-Etch-Rate InP Etch using Unaxis PM1 tool at 200 C.pdf|Lower etch-rate InP Etch (Cl2N2 200C)]]

==GaN Etch (Unaxis VLR)==
*[[media:09-Plasma Etching of GaN-UnaxisPM1.pdf|GaN Etch Recipe (Cl2BCl3N2Ar 85C)]]

==GaSb Etch (Unaxis VLR)==

=[[Si Deep RIE (PlasmaTherm/Bosch Etch)]]=
'''This tool does not exist in this configuration any more, so these recipes are for Reference purposes Only!!!'''
The machine was upgraded to be the new Plasma-Therm Fluorine ICP Etcher - the chamber configuration is now different, making these recipes invalid.
For Deep Silicon Etching, the Plasma-Therm DSE-iii is often used. Some single-step Silicon etching is still performed on the SLR Fluorine ICP, due to the slower etch rate.

==Bosch and Release Etch (Si Deep RIE)==
*[[media:10-Si Etch Bosch Release DRIE.pdf|Bosch and Release Processes]]
**Ideal for deep (>>1µm), vertical etching of Silicon. Through-wafer etches are possible (requires carrier wafer).
**Etch rate depends on area of exposed silicon being etched.
**Al2O3 mask (ALD or Sputter) has >9000:1 selectivity
**SiO2 (PECVD) mask has ~100:1 selectivity
**Thermal SiO2 has ~300:1 selectivity.
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe - SF6-C4F8-Ar]]

Tool List

2018-11-30T18:11:53Z

Mitchell: /* Topographical Metrology */

__NOTOC__
=Lithography=
You can see our available photoresists on the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemical_Datasheets Chemical Datasheets page].
{|
|- valign="top"
| width="300" |
===== Contact Aligners (Optical Exposure) =====
* [[Suss Aligners (SUSS MJB-3)]]
* [[IR Aligner (SUSS MJB-3 IR)]]
* [[Contact Aligner (SUSS MA-6)]]
* [[DUV Flood Expose]]

===== Other Patterning Systems =====
* [[E-Beam Lithography System (JEOL JBX-6300FS)]]
* [[Nano-Imprint (Nanonex NX2000)]]
* [[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
===== Steppers (Optical Exposure) =====
* [[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
* [[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
* [[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

===== Thermal Processing for Photolithography =====
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[High Temp Oven (Blue M)]]
* [[Vacuum Oven (YES)]]
* The [https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
|-
|}

= Vacuum Deposition =

{|
|- valign="top"
| width="300" |
===== Physical Vapor Deposition (PVD) =====
*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

===== Sputter Deposition =====
*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]

| width="400" |
===== Chemical Vapor Deposition (CVD) =====
*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

= Dry Etch =

{|
|- valign="top"
| width="300" |
===== Reactive Ion Etching (RIE) =====
*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]
*[[Ashers (Technics PEII)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[Plasma Activation (EVG 810)]]
*[[CAIBE (Oxford Ion Mill)]]

===== Etch Monitoring =====
* [[Laser Etch Monitoring]] (Endpoint Detection)
* Optical Emission Spectra
* Residual Gas Analyzer (RGA)
| width="400" |
===== ICP-RIE =====
*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

===== Other Dry Etching =====
*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
* [[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
* [[Gold Plating Bench]]
* [[Critical Point Dryer]]
* [[Spin Rinse Dryer (SemiTool)]]
* [[Chemical-Mechanical Polisher (Logitech)]]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
* [[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
* [[Strip Annealer]]
* [[High Temp Oven (Blue M)]]
* [[Tube Furnace (Tystar 8300)]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Tube Furnace AlGaAs Oxidation (Linberg)]]
| width="400" |
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[Vacuum Oven (YES)]]
* [[Wafer Bonder (SUSS SB6-8E)]]
* [[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
|-
|}

=Packaging=
* [[Dicing Saw (ADT)]]
* [[Flip-Chip Bonder (Finetech)]]
* [[Vacuum Sealer]]
* [[Wire Saw (Takatori)]]

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
===== Optical/Electron Microscopy =====
* [[Field Emission SEM 1 (FEI Sirion)]]
* [[Field Emission SEM 2 (JEOL 7600F)]]
* [[SEM Sample Coater (Hummer)]]
* [[Microscopes|Optical Microscopes]]
* [[Fluorescence Microscope (Olympus MX51)]]
* [[Deep UV Optical Microscope (Olympus)]]
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
* [[Photo-emission & IR Microscope (QFI)]]

===== Topographical Metrology =====
* [[Step Profilometer (KLA Tencor P-7)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]
* [[Surface Analysis (KLA/Tencor Surfscan)]]
** ''Sub-micron Particle Counter''
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |
===== Thin-Film Analysis/Measurement =====
* [[Ellipsometer (Woollam)]]
* [[Film Stress (Tencor Flexus)]]
* [[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
* [[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]
* [[Optical Film Thickness (Nanometric)]]
* [[Resistivity Mapper (CDE RESMAP)]]

===== Other Tools =====
* [[Probe Station & Curve Tracer]]
* [[Goniometer]]
* [[Photoluminescence PL Setup (Custom)]]
|-
|}

Atomic Force Microscope (Dimension 3100/Nanoscope IVA)

2018-11-30T18:11:00Z

Mitchell: Mitchell moved page Atomic Force Microscope (Dimension 3100/Nanoscope IVA) to Atomic Force Microscope (Bruker ICON)

#REDIRECT [[Atomic Force Microscope (Bruker ICON)]]

Atomic Force Microscope (Bruker ICON)

2018-11-30T18:11:00Z

Mitchell: Mitchell moved page Atomic Force Microscope (Dimension 3100/Nanoscope IVA) to Atomic Force Microscope (Bruker ICON)

{{tool|{{PAGENAME}}
|picture=ICON_AFM.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 5
|email=mitchell@ece.ucsb.edu
|description = Bruker ICON AFM
|manufacturer = Bruker Nano, Inc
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy ContactMode and TappingMode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to pN range, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™, in the 1-10 nN range. PeakForce Tapping® enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

Tool List

2018-11-30T18:09:36Z

Mitchell: /* Inspection, Test and Characterization */

__NOTOC__
=Lithography=
You can see our available photoresists on the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemical_Datasheets Chemical Datasheets page].
{|
|- valign="top"
| width="300" |
===== Contact Aligners (Optical Exposure) =====
* [[Suss Aligners (SUSS MJB-3)]]
* [[IR Aligner (SUSS MJB-3 IR)]]
* [[Contact Aligner (SUSS MA-6)]]
* [[DUV Flood Expose]]

===== Other Patterning Systems =====
* [[E-Beam Lithography System (JEOL JBX-6300FS)]]
* [[Nano-Imprint (Nanonex NX2000)]]
* [[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
===== Steppers (Optical Exposure) =====
* [[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
* [[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
* [[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

===== Thermal Processing for Photolithography =====
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[High Temp Oven (Blue M)]]
* [[Vacuum Oven (YES)]]
* The [https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
|-
|}

= Vacuum Deposition =

{|
|- valign="top"
| width="300" |
===== Physical Vapor Deposition (PVD) =====
*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

===== Sputter Deposition =====
*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]

| width="400" |
===== Chemical Vapor Deposition (CVD) =====
*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

= Dry Etch =

{|
|- valign="top"
| width="300" |
===== Reactive Ion Etching (RIE) =====
*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]
*[[Ashers (Technics PEII)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[Plasma Activation (EVG 810)]]
*[[CAIBE (Oxford Ion Mill)]]

===== Etch Monitoring =====
* [[Laser Etch Monitoring]] (Endpoint Detection)
* Optical Emission Spectra
* Residual Gas Analyzer (RGA)
| width="400" |
===== ICP-RIE =====
*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

===== Other Dry Etching =====
*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
* [[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
* [[Gold Plating Bench]]
* [[Critical Point Dryer]]
* [[Spin Rinse Dryer (SemiTool)]]
* [[Chemical-Mechanical Polisher (Logitech)]]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
* [[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
* [[Strip Annealer]]
* [[High Temp Oven (Blue M)]]
* [[Tube Furnace (Tystar 8300)]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Tube Furnace AlGaAs Oxidation (Linberg)]]
| width="400" |
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[Vacuum Oven (YES)]]
* [[Wafer Bonder (SUSS SB6-8E)]]
* [[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
|-
|}

=Packaging=
* [[Dicing Saw (ADT)]]
* [[Flip-Chip Bonder (Finetech)]]
* [[Vacuum Sealer]]
* [[Wire Saw (Takatori)]]

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
===== Optical/Electron Microscopy =====
* [[Field Emission SEM 1 (FEI Sirion)]]
* [[Field Emission SEM 2 (JEOL 7600F)]]
* [[SEM Sample Coater (Hummer)]]
* [[Microscopes|Optical Microscopes]]
* [[Fluorescence Microscope (Olympus MX51)]]
* [[Deep UV Optical Microscope (Olympus)]]
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
* [[Photo-emission & IR Microscope (QFI)]]

===== Topographical Metrology =====
* [[Step Profilometer (KLA Tencor P-7)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Atomic Force Microsope (Dimension 3100/Nanoscope IVA)|Atomic Force Microsope (Bruker ICON)]]
* [[Surface Analysis (KLA/Tencor Surfscan)]]
** ''Sub-micron Particle Counter''
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |
===== Thin-Film Analysis/Measurement =====
* [[Ellipsometer (Woollam)]]
* [[Film Stress (Tencor Flexus)]]
* [[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
* [[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]
* [[Optical Film Thickness (Nanometric)]]
* [[Resistivity Mapper (CDE RESMAP)]]

===== Other Tools =====
* [[Probe Station & Curve Tracer]]
* [[Goniometer]]
* [[Photoluminescence PL Setup (Custom)]]
|-
|}

Atomic Force Microscope (Bruker ICON)

2018-11-30T18:07:46Z

Mitchell: /* About */

Atomic Force Microscope (Bruker ICON)

2018-11-30T18:04:08Z

Mitchell:

{{tool|{{PAGENAME}}
|picture=ICON_AFM.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 5
|email=mitchell@ece.ucsb.edu
|description = Bruker ICON AFM
|manufacturer = Bruker Nano, Inc
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy ContactMode and TappingMode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to pN range, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™ (1-10 nN range). PeakForce Tapping® enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

Atomic Force Microscope (Bruker ICON)

2018-11-30T17:55:02Z

Mitchell: /* About */

{{tool|{{PAGENAME}}
|picture=ICON_AFM.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 5
|email=mitchell@ece.ucsb.edu
|description = Bruker ICON AFM
|manufacturer = Bruker Nano, Inc
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy ContactMode and TappingMode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to 10 pN, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™ (~1 nN). PeakForce Tapping® enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

Atomic Force Microscope (Bruker ICON)

2018-11-30T17:22:26Z

Mitchell:

{{tool|{{PAGENAME}}
|picture=ICON_AFM.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 5
|email=mitchell@ece.ucsb.edu
|description = Bruker ICON AFM
|manufacturer = Bruker Nano, Inc
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy Contact Mode and Tapping Mode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to 10 pN, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™ (~1 nN). PeakForce Tapping enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

File:ICON AFM.jpg

2018-11-29T21:52:13Z

Mitchell:

Atomic Force Microscope (Bruker ICON)

2018-11-29T21:50:36Z

Mitchell:

{{tool|{{PAGENAME}}
|picture=ICON_AFM.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 5
|email=mitchell@ece.ucsb.edu
|description = Bruker ICON AFM
|manufacturer = Bruker Nano, Inc
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy Contact Mode and Tapping Mode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to 10 pN, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™ (~1 nN). PeakForce Tapping enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces. This superior force control results in the most consistent, highest resolution AFM imaging for the widest range of sample types, from the softest biological samples to very hard materials.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

Atomic Force Microscope (Bruker ICON)

2018-11-29T21:49:01Z

Mitchell:

{{tool|{{PAGENAME}}
|picture=VeecoNanoman.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 5
|email=mitchell@ece.ucsb.edu
|description = Bruker ICON AFM
|manufacturer = Bruker Nano, Inc
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy Contact Mode and Tapping Mode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to 10 pN, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™ (~1 nN). PeakForce Tapping enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces. This superior force control results in the most consistent, highest resolution AFM imaging for the widest range of sample types, from the softest biological samples to very hard materials.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

Atomic Force Microscope (Bruker ICON)

2018-11-29T21:47:37Z

Mitchell:

{{tool|{{PAGENAME}}
|picture=VeecoNanoman.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 5
|email=mitchell@ece.ucsb.edu
|description = Dimension 3100 Nanoman
|manufacturer = Veeco Metrology, LLC
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy Contact Mode and Tapping Mode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to 10 pN, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™ (~1 nN). PeakForce Tapping enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces. This superior force control results in the most consistent, highest resolution AFM imaging for the widest range of sample types, from the softest biological samples to very hard materials.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

File:VeecoNanoman.jpg

2018-11-29T20:42:21Z

Mitchell: Mitchell uploaded a new version of File:VeecoNanoman.jpg

Atomic Force Microscope (Bruker ICON)

2018-11-29T20:32:22Z

Mitchell:

{{tool|{{PAGENAME}}
|picture=VeecoNanoman.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Dimension 3100 Nanoman
|manufacturer = Veeco Metrology, LLC
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping®,''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy Contact Mode and Tapping Mode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to 10 pN, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™ (~1 nN). PeakForce Tapping enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces. This superior force control results in the most consistent, highest resolution AFM imaging for the widest range of sample types, from the softest biological samples to very hard materials.

=Detailed Specifications=
*PeakForce Tapping® imaging for superior resolution and consistency
*Legacy Contact Mode and Tapping Mode imaging also available
*Substrate size range: small pieces (>2mm) up to 4" wafers
*Computer controlled XY stage for superior sample positioning; piezo Z scan range ~ 12um
*Basic electrical measurement techniques are available but only using Contact Mode imaging.
**Scanning Capacitance Microscopy (SCM)
**Conductive AFM (CAFM) for high currents, Tunneling AFM (TUNA) for low currents

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

Atomic Force Microscope (Bruker ICON)

2018-11-29T20:22:17Z

Mitchell: Updated AFM details!

{{tool|{{PAGENAME}}
|picture=VeecoNanoman.jpg
|type = Inspection, Test and Characterization
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Dimension 3100 Nanoman
|manufacturer = Veeco Metrology, LLC
|materials =
|toolid= 1
}}
= About =
The Bruker ICON AFM utilizes the latest paradigm in Atomic Force Microscopy - '''PeakForce Tapping (PFT),''' a method that combines the best features of the legacy Contact Mode and Tapping Mode imaging techniques, namely direct force control and intermittent surface contact to reduce damaging lateral forces, to precisely control the probe-to-surface force interaction as pixel-to-pixel force curve measurements. This control results in the most consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

Note that the ICON AFM also can also utilize the legacy Contact Mode and Tapping Mode techniques for imaging if required.

In PeakForce Tapping®, the probe periodically taps the sample and the pN-level interaction force is measured directly by the deflection of the cantilever. Through superior force control, the feedback loop keeps the peak force constant, down to 10 pN, in both air and fluid, which is significantly lower than is typically used with other modes, such as TappingMode™ (~1 nN).PeakForce Tapping enables the researcher to precisely control probe-to-sample interaction, providing the lowest available imaging forces. This superior force control results in the most consistent, highest resolution AFM imaging for the widest range of sample types, from the softest biological samples to very hard materials.

provides a variety of high resolution surface imaging techniques and the ability to manipulate or create nanoscale structures directly. Techniques available for imaging include contact mode AFM, tapping mode AFM, Scanning Tunnelling AFM, Conductive AFM, and Scanning Capacitance Microscopy. With the Nanoman option, the X and Y deflecting piezo-elements are independently controlled, allowing for precise and direct placement of the tip anywhere within the field. Direct manipulation of particles on the surface is then possible by dragging the tip in the desired direction. This feedback control, coupled with direct control of conductive tip and substrate voltages, allows for direct-write oxidation on a variety of surfaces to create or modify nanostructures through local anodization.

=Detailed Specifications=
*Conductive AFM modules for nA-microAmp current measurements
*Tunneling AFM modulefor pA-nA current measurements
*Scanning Capacitance Microscopy
*Resolution: Sub-nm height-measurement capability; X-Y resolution tip dependent
*Registration tolerance to a known mark: Field size dependent
*Minimum substrate size: small pieces
*Largest substrate size: 100 mm wafer
*Oxidation Line widths: Call for info.

=See Also=
*[https://www.bruker.com/products/surface-and-dimensional-analysis/atomic-force-microscopes/dimension-icon/overview.html Bruker ICON AFM overview]

Tool List

2018-11-29T19:40:03Z

Mitchell: Reverted edits by Mitchell (talk) to last revision by John d

__NOTOC__
=Lithography=
You can see our available photoresists on the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemical_Datasheets Chemical Datasheets page].
{|
|- valign="top"
| width="300" |
===== Contact Aligners (Optical Exposure) =====
* [[Suss Aligners (SUSS MJB-3)]]
* [[IR Aligner (SUSS MJB-3 IR)]]
* [[Contact Aligner (SUSS MA-6)]]
* [[DUV Flood Expose]]

===== Other Patterning Systems =====
* [[E-Beam Lithography System (JEOL JBX-6300FS)]]
* [[Nano-Imprint (Nanonex NX2000)]]
* [[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
===== Steppers (Optical Exposure) =====
* [[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
* [[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
* [[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

===== Thermal Processing for Photolithography =====
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[High Temp Oven (Blue M)]]
* [[Vacuum Oven (YES)]]
* The [https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
|-
|}

= Vacuum Deposition =

{|
|- valign="top"
| width="300" |
===== Physical Vapor Deposition (PVD) =====
*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

===== Sputter Deposition =====
*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]

| width="400" |
===== Chemical Vapor Deposition (CVD) =====
*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

= Dry Etch =

{|
|- valign="top"
| width="300" |
===== Reactive Ion Etching (RIE) =====
*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]
*[[Ashers (Technics PEII)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[Plasma Activation (EVG 810)]]
*[[CAIBE (Oxford Ion Mill)]]

===== Etch Monitoring =====
* [[Laser Etch Monitoring]] (Endpoint Detection)
* Optical Emission Spectra
* Residual Gas Analyzer (RGA)
| width="400" |
===== ICP-RIE =====
*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

===== Other Dry Etching =====
*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
* [[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
* [[Gold Plating Bench]]
* [[Critical Point Dryer]]
* [[Spin Rinse Dryer (SemiTool)]]
* [[Chemical-Mechanical Polisher (Logitech)]]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
* [[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
* [[Strip Annealer]]
* [[High Temp Oven (Blue M)]]
* [[Tube Furnace (Tystar 8300)]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Tube Furnace AlGaAs Oxidation (Linberg)]]
| width="400" |
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[Vacuum Oven (YES)]]
* [[Wafer Bonder (SUSS SB6-8E)]]
* [[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
|-
|}

=Packaging=
* [[Dicing Saw (ADT)]]
* [[Flip-Chip Bonder (Finetech)]]
* [[Vacuum Sealer]]
* [[Wire Saw (Takatori)]]

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
===== Optical/Electron Microscopy =====
* [[Field Emission SEM 1 (FEI Sirion)]]
* [[Field Emission SEM 2 (JEOL 7600F)]]
* [[SEM Sample Coater (Hummer)]]
* [[Microscopes|Optical Microscopes]]
* [[Fluorescence Microscope (Olympus MX51)]]
* [[Deep UV Optical Microscope (Olympus)]]
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
* [[Photo-emission & IR Microscope (QFI)]]

===== Topographical Metrology =====
* [[Step Profilometer (KLA Tencor P-7)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Atomic Force Microsope (Dimension 3100/Nanoscope IVA)]]
* [[Surface Analysis (KLA/Tencor Surfscan)]]
** ''Sub-micron Particle Counter''
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |
===== Thin-Film Analysis/Measurement =====
* [[Ellipsometer (Woollam)]]
* [[Film Stress (Tencor Flexus)]]
* [[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
* [[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]
* [[Optical Film Thickness (Nanometric)]]
* [[Resistivity Mapper (CDE RESMAP)]]

===== Other Tools =====
* [[Probe Station & Curve Tracer]]
* [[Goniometer]]
* [[Photoluminescence PL Setup (Custom)]]
|-
|}

Tool List

2018-11-29T19:36:50Z

Mitchell: Updated AFM to latest model

__NOTOC__
=Lithography=
You can see our available photoresists on the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemical_Datasheets Chemical Datasheets page].
{|
|- valign="top"
| width="300" |
===== Contact Aligners (Optical Exposure) =====
* [[Suss Aligners (SUSS MJB-3)]]
* [[IR Aligner (SUSS MJB-3 IR)]]
* [[Contact Aligner (SUSS MA-6)]]
* [[DUV Flood Expose]]

===== Other Patterning Systems =====
* [[E-Beam Lithography System (JEOL JBX-6300FS)]]
* [[Nano-Imprint (Nanonex NX2000)]]
* [[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]
| width="400" |
===== Steppers (Optical Exposure) =====
* [[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]
* [[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]
* [[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]

===== Thermal Processing for Photolithography =====
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[High Temp Oven (Blue M)]]
* [[Vacuum Oven (YES)]]
* The [https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.
|-
|}

= Vacuum Deposition =

{|
|- valign="top"
| width="300" |
===== Physical Vapor Deposition (PVD) =====
*[[E-Beam 1 (Sharon)]]
*[[E-Beam 2 (Custom)]]
*[[E-Beam 3 (Temescal)]]
*[[E-Beam 4 (CHA)]]
*[[Thermal Evap 1]]
*[[Thermal Evap 2 (Solder)]]

===== Sputter Deposition =====
*[[Sputter 3 (AJA ATC 2000-F)]]
*[[Sputter 4 (AJA ATC 2200-V)]]
*[[Sputter 5 (AJA ATC 2200-V)]]
*[[Ion Beam Deposition (Veeco NEXUS)]]

| width="400" |
===== Chemical Vapor Deposition (CVD) =====
*[[PECVD 1 (PlasmaTherm 790)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[ICP-PECVD (Unaxis VLR)]]
*[[Molecular Vapor Deposition]]
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]

|}

= Dry Etch =

{|
|- valign="top"
| width="300" |
===== Reactive Ion Etching (RIE) =====
*[[RIE 2 (MRC)]]
*[[RIE 3 (MRC)]]
*[[RIE 5 (PlasmaTherm)]]
*[[Ashers (Technics PEII)]]
*[[Plasma Clean (Gasonics 2000)]]
*[[Plasma Activation (EVG 810)]]
*[[CAIBE (Oxford Ion Mill)]]

===== Etch Monitoring =====
* [[Laser Etch Monitoring]] (Endpoint Detection)
* Optical Emission Spectra
* Residual Gas Analyzer (RGA)
| width="400" |
===== ICP-RIE =====
*[[ICP Etch 1 (Panasonic E626I)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[ICP-Etch (Unaxis VLR)]]
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]

===== Other Dry Etching =====
*[[UV Ozone Reactor]]
*[[XeF2 Etch (Xetch)|XeF2 Etch (Xetch)]]
*[[Vapor HF Etch]]

|}

=Wet Processing=
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.
{|
|- valign="top"
| width="300" |
* [[Wet Benches]]
**[[Solvent Cleaning Benches]]
**[[Spin Coat Benches]]
**[[Develop Benches]]
**[[Toxic Corrosive Benches]]
**[[HF/TMAH Processing Benches]]
**[[Plating Bench]]
| width="400" |
* [[Gold Plating Bench]]
* [[Critical Point Dryer]]
* [[Spin Rinse Dryer (SemiTool)]]
* [[Chemical-Mechanical Polisher (Logitech)]]
|-
|}

=Thermal Processing=
{|
|- valign="top"
| width="400" |
* [[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]
* [[Strip Annealer]]
* [[High Temp Oven (Blue M)]]
* [[Tube Furnace (Tystar 8300)]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Tube Furnace AlGaAs Oxidation (Linberg)]]
| width="400" |
* [[Ovens 1, 2 & 3 (Labline)]]
* [[Oven 4 (Fisher)]]
* [[Oven 5 (Labline)]]
* [[Vacuum Oven (YES)]]
* [[Wafer Bonder (SUSS SB6-8E)]]
* [[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]
|-
|}

=Packaging=
* [[Dicing Saw (ADT)]]
* [[Flip-Chip Bonder (Finetech)]]
* [[Vacuum Sealer]]
* [[Wire Saw (Takatori)]]

=Inspection, Test and Characterization=
{|
|- valign="top"
| width="300" |
===== Optical/Electron Microscopy =====
* [[Field Emission SEM 1 (FEI Sirion)]]
* [[Field Emission SEM 2 (JEOL 7600F)]]
* [[SEM Sample Coater (Hummer)]]
* [[Microscopes|Optical Microscopes]]
* [[Fluorescence Microscope (Olympus MX51)]]
* [[Deep UV Optical Microscope (Olympus)]]
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
* [[Photo-emission & IR Microscope (QFI)]]

===== Topographical Metrology =====
* [[Step Profilometer (KLA Tencor P-7)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Atomic Force Microsope (Bruker ICON)|Atomic Force Microsope (Dimension 3100/Nanoscope IVA)]]
* [[Surface Analysis (KLA/Tencor Surfscan)]]
** ''Sub-micron Particle Counter''
* [[Laser Scanning Confocal M-scope (Olympus LEXT)]]
| width="400" |
===== Thin-Film Analysis/Measurement =====
* [[Ellipsometer (Woollam)]]
* [[Film Stress (Tencor Flexus)]]
* [[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]
* [[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]
* [[Optical Film Thickness (Nanometric)]]
* [[Resistivity Mapper (CDE RESMAP)]]

===== Other Tools =====
* [[Probe Station & Curve Tracer]]
* [[Goniometer]]
* [[Photoluminescence PL Setup (Custom)]]
|-
|}

E-Beam Lithography System (JEOL JBX-6300FS)

2015-04-07T21:20:11Z

Mitchell: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=JEOL.jpg
|type = Lithography
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Vector Scan Electron Beam Lithography System
|manufacturer = JEOL USA Inc
|materials =
|toolid=34
}}
= About =
The 6300FS machine was installed at UCSB in May 2007.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

=Applications=
*Quantum devices in AlGaAs/GaAs heterostructures
*Photonic crystal production for various photonic band-gap applications
*sub-50nm gates for T-Gate production in AlGaN/GaN HEMT structures
*micro-ring resonator structures for photonic waveguide filtering
*DBR gratings for 1.5 um lasers
*Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
*Nano-MEMS structures
*100 nm T-Gates for millimeter wave hererojunction FETs

=Detailed Specifications=
*Utilizes a “Hi-brightness” thermal field emission electron source (ZnO/W) with a minimum spot-size at the substrate of 2nm; operates at 100kV only
*Unique two lens/deflector scanning system:
**4th lens => 7-8 nm minimum linewidth, 0.125nm scan step resolution, 62.5x62.5um scan field
**5th lens => 20-25nm minimum linewidth, 1.000nm scan step resolution, 500 x 500um scan field
*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)
*150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed

*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.
*UNIX computer controlled

*Advanced Fracturing software available (Layout BEAMER from GeniSys, Inc)
** automated proximity correction of patterns possible
** ability to manually position write fields within a pattern for optimum writing performance
** fine tuning of line-edge roughness by shot pitch correction

=Electron Beam Resists=

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''ZEP520''': very high-resolution positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes an inert solvent developer (100% n-amyl acetate)

*'''maN-2403''': negative resist (that is NOT chemically amplified) with very good resolution (sub-100 nm) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as Shipley CD-26 or LDD-26W)

*'''UV5/UVIII''': chemically amplified positive resists with very high resolution and excellent sensitivity; exhibits poor stability in cleanroom environments and has a short (< 6 months) shelf-life; currently under development at UCSB

E-Beam Lithography System (JEOL JBX-6300FS)

2012-07-10T16:48:09Z

Mitchell: /* Applications */

{{tool|{{PAGENAME}}
|picture=JEOL.jpg
|type = Lithography
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Vector Scan Electron Beam Lithography System
|manufacturer = JEOL USA Inc
|materials =
}}
= About =
The 6300FS machine was installed at UCSB in May 2007.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

=Applications=
*Quantum devices in AlGaAs/GaAs heterostructures
*Photonic crystal production for various photonic band-gap applications
*sub-50nm gates for T-Gate production in AlGaN/GaN HEMT structures
*micro-ring resonator structures for photonic waveguide filtering
*DBR gratings for 1.5 um lasers
*Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
*Nano-MEMS structures
*100 nm T-Gates for millimeter wave hererojunction FETs

=Detailed Specifications=
*“Hi-brightness” Thermal Field Emitter Source (ZnO/W)
*hi-resolution writing at nA’s
*25, 50, and 100 kV operation
*Minimum Spotsize ~ 2nm @ 100kV
*Maximum scan speed = 12 MHz (0.083us/pixel)
*150x150 mm writable area (but can load 200mm wafers)
*Stage control to 0.6 nm accuracy (λ/1024)
*Two deflector/objective lens system:
**5th Lens (8nm) and 4th Lens modes (25-40nm)
*Dynamic Focus and Stigmation Control
*10 mm/sec maximum stage speed
*UNIX computer controlled

=Electron Beam Resists=

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''ZEP520''': very high-resolution positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes an inert solvent developer (100% n-amyl acetate)

*'''maN-2403''': negative resist (that is NOT chemically amplified) with very good resolution (sub-100 nm) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as Shipley CD-26 or LDD-26W)

*'''UV5/UVIII''': chemically amplified positive resists with very high resolution and excellent sensitivity; exhibits poor stability in cleanroom environments and has a short (< 6 months) shelf-life; currently under development at UCSB

E-Beam Lithography System (JEOL JBX-6300FS)

2012-07-10T16:47:39Z

Mitchell: /* About */

{{tool|{{PAGENAME}}
|picture=JEOL.jpg
|type = Lithography
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Vector Scan Electron Beam Lithography System
|manufacturer = JEOL USA Inc
|materials =
}}
= About =
The 6300FS machine was installed at UCSB in May 2007.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

=Applications=
*Quantum devices in AlGaAs/GaAs heterostructures
*Photonic crystal production for various photonic band-gap applications
*sub-200nm gates for T-Gate production in AlGaN/GaN HEMT structures
*micro-ring resonator structures for photonic waveguide filtering
*DBR gratings for 1.5 um lasers
*Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
*Nano-MEMS structures
*100 nm T-Gates for millimeter wave hererojunction FETs

=Detailed Specifications=
*“Hi-brightness” Thermal Field Emitter Source (ZnO/W)
*hi-resolution writing at nA’s
*25, 50, and 100 kV operation
*Minimum Spotsize ~ 2nm @ 100kV
*Maximum scan speed = 12 MHz (0.083us/pixel)
*150x150 mm writable area (but can load 200mm wafers)
*Stage control to 0.6 nm accuracy (λ/1024)
*Two deflector/objective lens system:
**5th Lens (8nm) and 4th Lens modes (25-40nm)
*Dynamic Focus and Stigmation Control
*10 mm/sec maximum stage speed
*UNIX computer controlled

=Electron Beam Resists=

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''ZEP520''': very high-resolution positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes an inert solvent developer (100% n-amyl acetate)

*'''maN-2403''': negative resist (that is NOT chemically amplified) with very good resolution (sub-100 nm) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as Shipley CD-26 or LDD-26W)

*'''UV5/UVIII''': chemically amplified positive resists with very high resolution and excellent sensitivity; exhibits poor stability in cleanroom environments and has a short (< 6 months) shelf-life; currently under development at UCSB

E-Beam Lithography System (JEOL JBX-6300FS)

2012-07-10T16:46:42Z

Mitchell: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=JEOL.jpg
|type = Lithography
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Vector Scan Electron Beam Lithography System
|manufacturer = JEOL USA Inc
|materials =
}}
= About =
The 6300FS machine was installed at UCSB in May 2007.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 25, 50 and 100 kV. Note however, that the lower-resolution 50 kV mode is not used at UCSB.

=Applications=
*Quantum devices in AlGaAs/GaAs heterostructures
*Photonic crystal production for various photonic band-gap applications
*sub-200nm gates for T-Gate production in AlGaN/GaN HEMT structures
*micro-ring resonator structures for photonic waveguide filtering
*DBR gratings for 1.5 um lasers
*Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
*Nano-MEMS structures
*100 nm T-Gates for millimeter wave hererojunction FETs

=Detailed Specifications=
*“Hi-brightness” Thermal Field Emitter Source (ZnO/W)
*hi-resolution writing at nA’s
*25, 50, and 100 kV operation
*Minimum Spotsize ~ 2nm @ 100kV
*Maximum scan speed = 12 MHz (0.083us/pixel)
*150x150 mm writable area (but can load 200mm wafers)
*Stage control to 0.6 nm accuracy (λ/1024)
*Two deflector/objective lens system:
**5th Lens (8nm) and 4th Lens modes (25-40nm)
*Dynamic Focus and Stigmation Control
*10 mm/sec maximum stage speed
*UNIX computer controlled

=Electron Beam Resists=

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''ZEP520''': very high-resolution positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes an inert solvent developer (100% n-amyl acetate)

*'''maN-2403''': negative resist (that is NOT chemically amplified) with very good resolution (sub-100 nm) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as Shipley CD-26 or LDD-26W)

*'''UV5/UVIII''': chemically amplified positive resists with very high resolution and excellent sensitivity; exhibits poor stability in cleanroom environments and has a short (< 6 months) shelf-life; currently under development at UCSB