UCSB Nanofab Wiki - User contributions [en]

Atomic Layer Deposition Recipes

2025-09-05T18:08:05Z

Mitchell b:

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma (which can sometimes be too aggressive).

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH1-BDEAS-O*/300W-TEMP'''''
**Note that this recipe takes advantage of the higher-pressure range available in ch1 => faster than the lower pressure recipe available in ch3
**SiO2 deposition rate ~ 1-1.1 A/cyc
**TEMP = 300C (std), 250C, 230C, 200C, 150C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min
**
*Recipe name: '''''CH1-BDEAS-O*/300W[LoP]-TEMP'''''
**replicates the (lower pressure) deposition conditions in ch3 for those that need it
**SiO2 deposition rate ~ 0.9-1 A/cyc
**TEMP = 300C (std), 200C, 120C
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO nested loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity (loops: 1 TMA=Al loop per 19 DEX=Zn loops)
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
Unlike Chamber 1, Chamber 3 is restricted to a lower pressure range below 240 mTorr for all deposition steps.

'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-TEMP''''' ("Thermal")
**The proto-typical ALD recipe developed back in the 70's exhibiting perfect Lewis acid/base self-limiting surface reactions!
**Al2O3 deposition rate ~ 1.1-1.2 A/cyc
**TEMP = 300C (std), 250C, 200C, 150C, 120C
**
*Recipe Name: '''''CH3-TMA+250W/O*-TEMP''''' ("Plasma")
**Activated O* Plasma reaction instead of H2O => non-thermal
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**TEMP= 300°C (std.), 200°C, 120°C
**
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+500W/N*-TEMP'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**TEMP= 300°C Dep. (std.), 200*C, 120°C
**
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-TEMP''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc, n[632nm]~2.0-2.1
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**TEMP= 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
**
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-BDEAS+300W/O*-TEMP''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
**TEMP = 300°C (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of O* plasma - still under development!
**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2025-09-05T17:52:47Z

Mitchell b:

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma.

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH1-BDEAS-O*/300W-300C'''''
**SiO2 deposition rate ~ 1.008 A/cyc
**Similar to above TDMAS recipes, with different precursor gas.
**Temperature variations: ''To Be Added''
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.192 A/cyc
*Recipe name: '''''CH3-TMA+H2O-250C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.214 A/cyc
*Recipe name: '''''CH3-TMA+H2O-200C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.184 A/cyc
**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''
*Recipe Name: '''''CH3-TMA+250W/O*-300C''''' ("Plasma")
**Oxygen Plasma reaction instead of H2O
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**Temperature variations: 300°C (std.), '''200°C, 120°C'''
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - ask supervisor

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+500W/N*-TEMP'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**TEMP= 300°C Dep. (std.), 200*C, 120°C
**
*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-300C''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-BDEAS+300W/O*-TEMP''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
**TEMP = 300°C (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of O* plasma - still under development!
**Requires Ozone generator to be turned on - ask supervisor

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2025-05-24T00:16:27Z

Mitchell b: /* Plasma */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma.

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300*C (std.), 250°C, 200°C, 120°C
*Recipe name: '''''CH1-BDEAS-O*/300W-300C'''''
**SiO2 deposition rate ~ 1.008 A/cyc
**Similar to above TDMAS recipes, with different precursor gas.
**Temperature variations: ''To Be Added''
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.192 A/cyc
*Recipe name: '''''CH3-TMA+H2O-250C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.214 A/cyc
*Recipe name: '''''CH3-TMA+H2O-200C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.184 A/cyc
**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''
*Recipe Name: '''''CH3-TMA+250W/O*-300C''''' ("Plasma")
**Oxygen Plasma reaction instead of H2O
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**Temperature variations: 300°C (std.), '''200°C, 120°C'''
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - ask supervisor

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**Power variations: 300W, 400W (at 300°C)
**Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-300C''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300°C (std.), 250°C, 230°C, 220°C, 200°C, 175°C, 150°C, 120°C
*Recipe name: '''''CH3-TDMAS+O3/200mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2025-05-24T00:03:02Z

Mitchell b: /* Chamber #1: Conductive Films */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==Atomic Layer Deposition (aka ALD) - what is it?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive. Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma.

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.265 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300*C (std.), 250°C, 200°C, 120°C
*Recipe name: '''''CH1-BDEAS-O*/300W-300C'''''
**SiO2 deposition rate ~ 1.008 A/cyc
**Similar to above TDMAS recipes, with different precursor gas.
**Temperature variations: ''To Be Added''
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.192 A/cyc
*Recipe name: '''''CH3-TMA+H2O-250C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.214 A/cyc
*Recipe name: '''''CH3-TMA+H2O-200C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.184 A/cyc
**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''
*Recipe Name: '''''CH3-TMA+250W/O*-300C''''' ("Plasma")
**Oxygen Plasma reaction instead of H2O
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**Temperature variations: 300°C (std.), '''200°C, 120°C'''
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - ask supervisor

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**Power variations: 300W, 400W (at 300°C)
**Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-300C''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300°C (std.), 250°C, 230°C, 220°C, 200°C, 175°C, 150°C, 120°C
*Recipe name: '''''CH3-TDMAS+O3/200mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2025-05-23T23:59:14Z

Mitchell b: /* Ozone */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==What is Atomic Layer Deposition - aka ALD?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive. Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma.

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, always be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

==Chamber #1: Conductive Films==
'''Chamber 1 utilizes a dual manometer system that allows
higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allows the use of less reactive organo-metallic precursors to effect growth in a reasonable time-frame.'''

'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg|Tool Supervisor]].

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.265 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300*C (std.), 250°C, 200°C, 120°C
*Recipe name: '''''CH1-BDEAS-O*/300W-300C'''''
**SiO2 deposition rate ~ 1.008 A/cyc
**Similar to above TDMAS recipes, with different precursor gas.
**Temperature variations: ''To Be Added''
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.192 A/cyc
*Recipe name: '''''CH3-TMA+H2O-250C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.214 A/cyc
*Recipe name: '''''CH3-TMA+H2O-200C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.184 A/cyc
**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''
*Recipe Name: '''''CH3-TMA+250W/O*-300C''''' ("Plasma")
**Oxygen Plasma reaction instead of H2O
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**Temperature variations: 300°C (std.), '''200°C, 120°C'''
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - ask supervisor

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**Power variations: 300W, 400W (at 300°C)
**Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-300C''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300°C (std.), 250°C, 230°C, 220°C, 200°C, 175°C, 150°C, 120°C
*Recipe name: '''''CH3-TDMAS+O3/200mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2025-05-23T22:26:00Z

Mitchell b: /* Temperature */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==What is Atomic Layer Deposition - aka ALD?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== Process Options ==

===Thermal ALD===
In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.

===Activated ALD===

==== Plasma ====
'''''O*''''' or '''''N*''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive. Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

==== Ozone ====
'''''O3''''' in the recipe title refers to an oxidation reaction that uses the external Ozone generator for deposition. Ozone is an active form of oxygen that can be used to generate oxide films in a more thermal manner than plasma.

Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Click on the Start Generator button to start the system. Wait for about 5 minutes for the system to stabilize. When done, click on the Stop Generator button to turn off the O3 source. O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for further details.

===Varying Atomic Ratios===
For some recipes such as TiN, there are two loops in the recipe. The outermost loop controls the total thickness of the film, the inner loop controls the ratio between the two elements. Contact the superviosr for more detailed info.

==Oxford FlexAL Chamber #1: Metals==
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.265 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300*C (std.), 250°C, 200°C, 120°C
*Recipe name: '''''CH1-BDEAS-O*/300W-300C'''''
**SiO2 deposition rate ~ 1.008 A/cyc
**Similar to above TDMAS recipes, with different precursor gas.
**Temperature variations: ''To Be Added''
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.192 A/cyc
*Recipe name: '''''CH3-TMA+H2O-250C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.214 A/cyc
*Recipe name: '''''CH3-TMA+H2O-200C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.184 A/cyc
**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''
*Recipe Name: '''''CH3-TMA+250W/O*-300C''''' ("Plasma")
**Oxygen Plasma reaction instead of H2O
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**Temperature variations: 300°C (std.), '''200°C, 120°C'''
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - ask supervisor

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**Power variations: 300W, 400W (at 300°C)
**Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-300C''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300°C (std.), 250°C, 230°C, 220°C, 200°C, 175°C, 150°C, 120°C
*Recipe name: '''''CH3-TDMAS+O3/200mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2025-05-23T22:20:30Z

Mitchell b: /* Temperature */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

==What is ALD?==
Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg|Tool Supervisor]] if needed).

== ALD Process Options ==

===Temperature===
"Thermal" ALD, considered the most standard process. Can be slower due to time for reaction to proceed.

''To Be Added: effect of varying temeprature''

===Plasma===
'''''O*''''' or '''''N*''''' mean Oxygen/Nitrogen plasma, respectively.

The plasma processes on this tool will run considerably faster than purely thermal proceses, because the reaction time is faster. Also, the O* plasma may reduce carbon contaminants from the organic precursors.

The drawback is that the plasma shutter, which opens/closes between plasma steps, gets coated in materials and can cause higher particle counts. We have attempted to remedy this by keeping the plasma shutter open during all recipes.

===Ozone===
'''''O3''''' indicates a recipe using the Ozone generator for reaction. This Ozone-generator must be manually turned on before running the recipe - check with [[Atomic Layer Deposition (Oxford FlexAL)|supervisor]] for details.

''More info to be added''

===Varying Atomic Ratios===
For some recipes such as TiN, there are two loops in the recipe. The outermost loop controls the total thickness of the film, the inner loop controls the ratio between the two elements. Contact the superviosr for more detailed info.

==Oxford FlexAL Chamber #1: Metals==
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.265 A/cyc
**Recipe variations: ''TBD''

===Pt deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
**Pt deposition rate ~ 0.5-0.6 A/cyc
**Conductivity data: (to be added)
**recipe utilizes the ozone generator which must be first set to the following conditions:
***O2 flow = 250sccm
***O3 concentration = 15 wt%
**300°C deposition
*Recipe name: '''''CH1-TMCpPt+250W/O*-300C'''''
**Uses Oxygen plasma
**300°C deposition

===Ru deposition (ALD CHAMBER 1)===

*Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
*Ru deposition rate ~ 0.6-0.7A/cyc.
*Conductivity data: (to be added)
*300°C, O2 gas reaction

===SiO{{sub|2}} deposition (ALD CHAMBER 1)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300*C (std.), 250°C, 200°C, 120°C
*Recipe name: '''''CH1-BDEAS-O*/300W-300C'''''
**SiO2 deposition rate ~ 1.008 A/cyc
**Similar to above TDMAS recipes, with different precursor gas.
**Temperature variations: ''To Be Added''
**Etch rate (BHF:DI=1:100)~7.46nm/min

===ZnO Deposition (ALD Chamber 1)===
''Conductive film.''

*Recipe name: '''''Ch1_DEZ+H2O-200C'''''
*ZnO deposition rate ≈ 1.6 A/cycle
*resistivity ≈ ''TBA''
*200°C Deposition, Water reaction

===ZnO:Al deposition (ALD CHAMBER 1)===
''Al-Doped ZnO for variable resisitivity.''

*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
**''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
*Al dose fraction = 5% for lowest resistivity
*ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==Oxford FlexAL Chamber #3: Dielectrics==
'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.)

===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+H2O-300C''''' ("Thermal")
**300°C Dep., Thermal Water reaction
**This is considered the standard recipe for ALD
**Al2O3 deposition rate ~ 1.192 A/cyc
*Recipe name: '''''CH3-TMA+H2O-250C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.214 A/cyc
*Recipe name: '''''CH3-TMA+H2O-200C''''' ("Thermal")
**Al2O3 deposition rate ~ 1.184 A/cyc
**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''
*Recipe Name: '''''CH3-TMA+250W/O*-300C''''' ("Plasma")
**Oxygen Plasma reaction instead of H2O
**Lower carbon content
**Approx. 1.5–2x faster deposition rate than thermal.
**Temperature variations: 300°C (std.), '''200°C, 120°C'''
*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
**Similar dep. rate
**Ozone (O3) reactant, experimental
**Requires Ozone generator to be turned on - ask supervisor

===AlN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TMA+100W/N*-300C'''''
**AlN deposition rate ~ t.b.d.
**Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
**Temperature Variations: 300°C Dep. (std.), 200*C, 120°C
**Power variations: 300W, 400W (at 300°C)
**Nitrogen/Hydrogen variations: "30N*/30H*" at 200*C and 300°C

===HfO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAH+H2O-300C''''' ("Thermal")
**HfO2 deposition rate ~ 0.9-1.0A/cyc
**Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 250°C, 200°C, 150°C, 120°C
*Recipe name: '''''CH3-TEMAH+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===SiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAS+250W/O*-300C''''' ("Plasma")
**SiO2 deposition rate ~ 0.7-0.8A/cyc
**Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
**Temperature variations: 300°C (std.), 250°C, 230°C, 220°C, 200°C, 175°C, 150°C, 120°C
*Recipe name: '''''CH3-TDMAS+O3/200mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TEMAZ+H2O-300C''''' ("Thermal")
**ZrO2 deposition rate ~ 0.9-1.0A/cyc
**Not directly characterized since results are basically the same as the HfO2 process above.
**Temperature variations: 300°C (std.), 200°C
*Recipe name: '''''CH3-TEMAZ+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O
*Recipe name: '''''CH3-TEMAZ+O3/100mT-300C''''' ("Ozone")
**Uses Ozone (O3) for reactant instead of H2O
**Requires Ozone generator to be turned on - ask supervisor

===TiO{{sub|2}} deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+H2O-300C''''' ("Thermal")
**TiO2 deposition rate ~ 0.6A/cyc
**Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
**Temperature variations: 300°C (std.), 200°C, 120*C
*Recipe name: '''''CH3-TDMAT+250W/O*-300C''''' ("Plasma")
**Uses Oxygen plasma reactant instead of H2O

===TiN deposition (ALD CHAMBER 3)===

*Recipe name: '''''CH3-TDMAT+400W/12N*/4H*-300C'''''
**TiN deposition rate ~ 0.7A/cyc
**Conductivity data: (to be added)
**Uses Plasma of N2 & H2 gases.
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/N*-300C'''''
**Uses Plasma of N2 only
**Temperatures: 300°C (std.), 200°C
*Recipe name: '''''CH3-TDMAT+100W/NH3*-300C'''''
**Uses Plasma of NH3 only
**Temperatures: 300°C (std.), 200°C

===Historical Data (ALD Chamber 3)===

*[[Tbd|2021 ALD Al2O3 (H2O, 300°C) Historical Data]]

Atomic Layer Deposition Recipes

2018-05-14T18:51:03Z

Mitchell b: /* ZnO deposition (ALD CHAMBER 1) */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)==

*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc

==AlN deposition (ALD CHAMBER 3)==
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

==HfO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

==Pt deposition (ALD CHAMBER 1)==
*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
*Conductivity data: (to be added soon)

== Ru deposition (ALD CHAMBER 1) ==
* Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc.
* Conductivity data: (to be added soon)

==SiO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure

==ZnO:Al deposition (ALD CHAMBER 1)==
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==ZrO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
*not directly characterized since results are basically the same as the HfO2 process above.
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.

==TiO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

==TiN deposition (ALD CHAMBER 3)==
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
*Conductivity data: (to be added soon)

Atomic Layer Deposition Recipes

2018-05-14T18:48:04Z

Mitchell b: /* Al O deposition (ALD CHAMBER 3) */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)==

*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc

==AlN deposition (ALD CHAMBER 3)==
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

==HfO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

==Pt deposition (ALD CHAMBER 1)==
*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
*Conductivity data: (to be added soon)

== Ru deposition (ALD CHAMBER 1) ==
* Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc.
* Conductivity data: (to be added soon)

==SiO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure

==ZnO deposition (ALD CHAMBER 1)==
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc
*resistivity ~ 4200uOhm.cm (390A film)

==ZrO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
*not directly characterized since results are basically the same as the HfO2 process above.
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.

==TiO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

==TiN deposition (ALD CHAMBER 3)==
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
*Conductivity data: (to be added soon)

Atomic Layer Deposition Recipes

2018-05-10T00:35:51Z

Mitchell b: /* TiO deposition (ALD) */

{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)==

*{{fl|ALD-Al2O3-300-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300}}
*{{fl|ALD-Al2O3-300-Saturated-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300 Saturated}}
*{{fl|ALD-Al2O3-Plasma-300C-Recipe.pdf|Al{{sub|2}}O{{sub|3}} plasma 300C}}
*{{fl|ALD-Al2O3-100-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 100}}

==AlN deposition (ALD CHAMBER 3)==
*{{fl|ALD-AlN-300-recipe.pdf|AlN 300}}

==HfO{{sub|2}} deposition (ALD CHAMBER 3)==
*{{fl|ALD-HfO2-100-recipe.pdf|HfO{{sub|2}} 100}}
*{{fl|ALD-HfO2-300-recipe.pdf|HfO{{sub|2}} 300}}

==Pt deposition (ALD CHAMBER 1)==
(Platinum)
*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
*Conductivity data: (to be added soon)

== Ru deposition (ALD CHAMBER 1) ==
(Ruthenium)
* Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.65A/cyc.
* Conductivity data: (to be added soon)

==SiO{{sub|2}} deposition (ALD CHAMBER 3)==
*{{fl|ALD-SiO2-100-recipe.pdf|SiO{{sub|2}} 100}}
*{{fl|ALD-SiO2-300-recipe.pdf|SiO{{sub|2}} 300}}

==ZnO deposition (ALD CHAMBER 1)==
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5%): ZnO deposition rate ~ 1.7A/cyc, resistivity ~ 4200uOhm.cm (390A film)

==ZrO{{sub|2}} deposition (ALD CHAMBER 3)==
*{{fl|ALD-ZrO2-300-recipe.pdf|ZrO{{sub|2}} 300}}

==TiO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

==TiN deposition (ALD CHAMBER 3)==
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
*Conductivity data: (to be added soon)

E-Beam Lithography System (JEOL JBX-6300FS)

2017-10-31T17:43:00Z

Mitchell b: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=JEOL.jpg
|type = Lithography
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Vector Scan Electron Beam Lithography System
|manufacturer = JEOL USA Inc
|materials =
|toolid=34
}}
= About =
The 6300FS machine was installed at UCSB in May 2007.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

=Applications=
*Quantum devices in AlGaAs/GaAs heterostructures
*Photonic crystal production for various photonic band-gap applications
*sub-50nm gates for T-Gate production in AlGaN/GaN HEMT structures
*micro-ring resonator structures for photonic waveguide filtering
*DBR gratings for 1.5 um lasers
*Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
*Nano-MEMS structures
*100 nm T-Gates for millimeter wave hererojunction FETs

=Detailed Specifications=
*Utilizes a “Hi-brightness” thermal field emission electron source (ZnO/W) with a minimum spot-size at the substrate of 2nm; operates at 100kV only
*Unique two lens/deflector scanning system:
**4th lens => 20-25nm minimum line-width, 1.000nm scan step resolution, 500 x 500um scan field
**5th lens => 7-8 nm minimum line-width, 0.125nm scan step resolution, 62.5x62.5um scan field

*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)
*150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed

*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.
*UNIX computer controlled

*Advanced Fracturing software available (Layout BEAMER from GeniSys, Inc)
** automated proximity correction of patterns possible
** ability to manually position write fields within a pattern for optimum inter-field writing performance
** ability to adjust beam scanning strategy within a write field for optimum intra-field writing performance
** fine tuning of line-edge roughness by shot pitch correction

=Electron Beam Resists=

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!; very high-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified) with very good resolution (down to the 40-50nm range) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based) with extremely good resolution (features below 10nm can be resolved); etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development; sensitivity and contrast are very dependent on developer solution used and are usually poor - standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast, stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV), "salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''UV6/UVN-210''': chemically amplified polymer-based resists with high resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV); UV6 used mostly in optimized t-gate resist structures; developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

E-Beam Lithography System (JEOL JBX-6300FS)

2017-10-31T17:41:34Z

Mitchell b: /* Detailed Specifications */

E-Beam Lithography System (JEOL JBX-6300FS)

2017-10-31T17:37:52Z

Mitchell b: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=JEOL.jpg
|type = Lithography
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Vector Scan Electron Beam Lithography System
|manufacturer = JEOL USA Inc
|materials =
|toolid=34
}}
= About =
The 6300FS machine was installed at UCSB in May 2007.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

=Applications=
*Quantum devices in AlGaAs/GaAs heterostructures
*Photonic crystal production for various photonic band-gap applications
*sub-50nm gates for T-Gate production in AlGaN/GaN HEMT structures
*micro-ring resonator structures for photonic waveguide filtering
*DBR gratings for 1.5 um lasers
*Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
*Nano-MEMS structures
*100 nm T-Gates for millimeter wave hererojunction FETs

=Detailed Specifications=
*Utilizes a “Hi-brightness” thermal field emission electron source (ZnO/W) with a minimum spot-size at the substrate of 2nm; operates at 100kV only
*Unique two lens/deflector scanning system:
**4th lens => 7-8 nm minimum linewidth, 0.125nm scan step resolution, 62.5x62.5um scan field
**5th lens => 20-25nm minimum linewidth, 1.000nm scan step resolution, 500 x 500um scan field

*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)
*150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed

*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.
*UNIX computer controlled

*Advanced Fracturing software available (Layout BEAMER from GeniSys, Inc)
** automated proximity correction of patterns possible
** ability to manually position write fields within a pattern for optimum inter-field writing performance
** ability to adjust beam scanning strategy within a write field for optimum intra-field writing performance
** fine tuning of line-edge roughness by shot pitch correction

=Electron Beam Resists=

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!; very high-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified) with very good resolution (down to the 40-50nm range) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based) with extremely good resolution (features below 10nm can be resolved); etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development; sensitivity and contrast are very dependent on developer solution used and are usually poor - standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast, stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV), "salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''UV6/UVN-210''': chemically amplified polymer-based resists with high resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV); UV6 used mostly in optimized t-gate resist structures; developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

E-Beam Lithography System (JEOL JBX-6300FS)

2017-10-31T17:36:50Z

Mitchell b: /* Electron Beam Resists */

{{tool|{{PAGENAME}}
|picture=JEOL.jpg
|type = Lithography
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Vector Scan Electron Beam Lithography System
|manufacturer = JEOL USA Inc
|materials =
|toolid=34
}}
= About =
The 6300FS machine was installed at UCSB in May 2007.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

=Applications=
*Quantum devices in AlGaAs/GaAs heterostructures
*Photonic crystal production for various photonic band-gap applications
*sub-50nm gates for T-Gate production in AlGaN/GaN HEMT structures
*micro-ring resonator structures for photonic waveguide filtering
*DBR gratings for 1.5 um lasers
*Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
*Nano-MEMS structures
*100 nm T-Gates for millimeter wave hererojunction FETs

=Detailed Specifications=
*Utilizes a “Hi-brightness” thermal field emission electron source (ZnO/W) with a minimum spot-size at the substrate of 2nm; operates at 100kV only
*Unique two lens/deflector scanning system:
**4th lens => 7-8 nm minimum linewidth, 0.125nm scan step resolution, 62.5x62.5um scan field
**5th lens => 20-25nm minimum linewidth, 1.000nm scan step resolution, 500 x 500um scan field
*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)
*150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed

*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.
*UNIX computer controlled

*Advanced Fracturing software available (Layout BEAMER from GeniSys, Inc)
** automated proximity correction of patterns possible
** ability to manually position write fields within a pattern for optimum inter-field writing performance
** ability to adjust beam scanning strategy within a write field for optimum intra-field writing performance
** fine tuning of line-edge roughness by shot pitch correction

=Electron Beam Resists=

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (usually MIBK:IPA mixtures)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!; very high-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified) with very good resolution (down to the 40-50nm range) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based) with extremely good resolution (features below 10nm can be resolved); etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development; sensitivity and contrast are very dependent on developer solution used and are usually poor - standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast, stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV), "salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

*'''UV6/UVN-210''': chemically amplified polymer-based resists with high resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV); UV6 used mostly in optimized t-gate resist structures; developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

E-Beam Lithography System (JEOL JBX-6300FS)

2017-10-31T17:10:47Z

Mitchell b: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=JEOL.jpg
|type = Lithography
|super= Bill Mitchell
|phone= (805)893-4974
|location=Bay 7
|email=mitchell@ece.ucsb.edu
|description = Vector Scan Electron Beam Lithography System
|manufacturer = JEOL USA Inc
|materials =
|toolid=34
}}
= About =
The 6300FS machine was installed at UCSB in May 2007.

This system uses the vector scan approach for electron beam deflection within a field, step and repeat for stage movement between fields, the combination of which allows the entire area of the sample to be exposed to the electron beam.

The machine can be run at 25, 50 and 100 kV. Note however that only the 100kV mode is used at UCSB.

=Applications=
*Quantum devices in AlGaAs/GaAs heterostructures
*Photonic crystal production for various photonic band-gap applications
*sub-50nm gates for T-Gate production in AlGaN/GaN HEMT structures
*micro-ring resonator structures for photonic waveguide filtering
*DBR gratings for 1.5 um lasers
*Aligned nano-electrode fabrication for various nanowire/nanotube electronic measurements
*Nano-MEMS structures
*100 nm T-Gates for millimeter wave hererojunction FETs

=Detailed Specifications=
*Utilizes a “Hi-brightness” thermal field emission electron source (ZnO/W) with a minimum spot-size at the substrate of 2nm; operates at 100kV only
*Unique two lens/deflector scanning system:
**4th lens => 7-8 nm minimum linewidth, 0.125nm scan step resolution, 62.5x62.5um scan field
**5th lens => 20-25nm minimum linewidth, 1.000nm scan step resolution, 500 x 500um scan field
*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)
*150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed

*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.
*UNIX computer controlled

*Advanced Fracturing software available (Layout BEAMER from GeniSys, Inc)
** automated proximity correction of patterns possible
** ability to manually position write fields within a pattern for optimum inter-field writing performance
** ability to adjust beam scanning strategy within a write field for optimum intra-field writing performance
** fine tuning of line-edge roughness by shot pitch correction

=Electron Beam Resists=

Currently available at UCSB are:
*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes an inert solvent developer (1:3 MIBK:IPA)

*'''ZEP520''': very high-resolution positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes an inert solvent developer (100% n-amyl acetate)

*'''maN-2403''': negative resist (that is NOT chemically amplified) with very good resolution (sub-100 nm) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as Shipley CD-26 or LDD-26W)

*'''UV5/UVIII''': chemically amplified positive resists with very high resolution and excellent sensitivity; exhibits poor stability in cleanroom environments and has a short (< 6 months) shelf-life; currently under development at UCSB