UCSB Nanofab Wiki - User contributions [en]

Old Deposition Data - NastaziaM 2021-11-22

2021-11-30T20:09:13Z

Nastazia: added amorphous si

<big>Back to [[Vacuum Deposition Recipes]]</big>

=[[PECVD 1 (PlasmaTherm 790)]]=

===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots]===

==SiO2 [PECVD 1]==

===Standard Recipe===
SiO2 [PECVD 1] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>]
==Si3N4 [PECVD 1]==

===Standard Recipe===
Si3N4 [PECVD 1] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>]

==Low Stress Si3N4 [PECVD 2]==

===Standard Recipe===
Low Stress Si3N4 [PECVD 1] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1515630363 Low Stress Si3N4<nowiki> [PECVD 1] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>]
==Standard Cleaning Procedure [PECVD 1]==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

===Standard Cleaning Recipe [CF4/O2 Clean]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Plots]===

==SiO2 [PECVD 2]==

===Standard Recipe===
SiO2 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>]
==Si3N4 [PECVD 2]==

===Standard Recipe===
Si3N4 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>]

==Low Stress Si3N4 [PECVD 2]==

===Standard Recipe===
Low Stress Si3N4 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=268003895 Low Stress Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>]
==Amorphous Silicone [PECVD 2]==

===Standard Recipe===
Amorphous Silicone [PECVD 2] Standard Recipe

===Present Data===
Amorphous Silicone [PECVD 2] Present Data

===Historical Data===
Amorphous Silicone [PECVD 2] Historical Data
==Standard Cleaning Procedure [PECVD 2]==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===Standard Clean Recipe [STD CF4/O2 Clean recipe]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1 min. clean for every 1 min. deposition
|-
|Si3N4
|1 min. clean for every 7 min of deposition
|-
|If > 29min total dep time
(Season + Dep)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

===[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Plots]===

==Low Deposition Rate SiO2 [ICP-PECVD]==

===Standard Recipe===
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] Historical Data</nowiki>]

==High Deposition Rate SiO2 [ICP-PECVD]==

===Standard Recipe===
High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO2<nowiki> [ICP-PECVD] Historical Data</nowiki>]
==Si3N4 [ICP-PECVD]==

===Standard Recipe===
Si3N4 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si3N4<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si3N4<nowiki> [ICP-PECVD] Historical Data</nowiki>]

==Low Stress Si3N4 [ICP-PECVD]==

===Standard Recipe===
Low Stress Si3N4 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si3N4<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si3N4<nowiki> [ICP-PECVD] Historical Data</nowiki>]
==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===
=[[Ion Beam Deposition (Veeco NEXUS)]]=

===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Plots]===

==SiO2 [IBD]==

===Standard Recipe===
SiO2 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO2<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=700537698 SiO2<nowiki> [IBD] Historical Data</nowiki>]

==Si3N4 [IBD]==

===Standard Recipe===
Si3N4 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si3N4<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2093120876 Si3N4<nowiki> [IBD] Historical Data</nowiki>]
==Ta2O5 [IBD]==

===Standard Recipe===
Ta2O5 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta2O5<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1075234846 Ta2O5<nowiki> [IBD] Historical Data</nowiki>]
==Al2O3 [IBD]==

===Standard Recipe===
Al2O3 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al2O3<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1294329492 Al2O3<nowiki> [IBD] Historical Data</nowiki>]
==TiO2 [IBD]==

===Standard Recipe===
TiO2 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO2<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1327808550 TiO2<nowiki> [IBD] Historical Data</nowiki>]
==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

Old Deposition Data - NastaziaM 2021-11-22

2021-11-30T19:45:44Z

Nastazia: Inserted hyperlinks for historical data and plots

<big>Back to [[Vacuum Deposition Recipes]]</big>

=[[PECVD 1 (PlasmaTherm 790)]]=

=== [https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Plots] ===

==SiO2 [PECVD 1]==

===Standard Recipe===
SiO2 [PECVD 1] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1503619544 SiO2<nowiki> [PECVD 1] Historical Data</nowiki>]
==Si3N4 [PECVD 1]==

===Standard Recipe===
Si3N4 [PECVD 1] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=604790654 Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>]

==Low Stress Si3N4 [PECVD 2]==

===Standard Recipe===
Low Stress Si3N4 [PECVD 1] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1515630363 Low Stress Si3N4<nowiki> [PECVD 1] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=934830479 Low Stress Si3N4<nowiki> [PECVD 1] Historical Data</nowiki>]
==Standard Cleaning Procedure [PECVD 1]==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

===Standard Cleaning Recipe [CF4/O2 Clean]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

=== [https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Plots] ===

==SiO2 [PECVD 2]==

===Standard Recipe===
SiO2 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=2024333220 SiO2<nowiki> [PECVD 2] Historical Data</nowiki>]
==Si3N4 [PECVD 2]==

===Standard Recipe===
Si3N4 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1153442266 Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>]

==Low Stress Si3N4 [PECVD 2]==

===Standard Recipe===
Low Stress Si3N4 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=268003895 Low Stress Si3N4<nowiki> [PECVD 2] Historical Data</nowiki>]
==Standard Cleaning Procedure [PECVD 2]==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===Standard Clean Recipe [STD CF4/O2 Clean recipe]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1 min. clean for every 1 min. deposition
|-
|Si3N4
|1 min. clean for every 7 min of deposition
|-
|If > 29min total dep time
(Season + Dep)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

=== [https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Plots] ===

==Low Deposition Rate SiO2 [ICP-PECVD]==

===Standard Recipe===
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1916118198 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] Historical Data</nowiki>]

==High Deposition Rate SiO2 [ICP-PECVD]==

===Standard Recipe===
High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=939753086 High Deposition Rate SiO2<nowiki> [ICP-PECVD] Historical Data</nowiki>]
==Si3N4 [ICP-PECVD]==

===Standard Recipe===
Si3N4 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si3N4<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=782128304 Si3N4<nowiki> [ICP-PECVD] Historical Data</nowiki>]

==Low Stress Si3N4 [ICP-PECVD]==

===Standard Recipe===
Low Stress Si3N4 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si3N4<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1024532473 Low Stress Si3N4<nowiki> [ICP-PECVD] Historical Data</nowiki>]
==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===
=[[Ion Beam Deposition (Veeco NEXUS)]]=

=== [https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Plots] ===

==SiO2 [IBD]==

===Standard Recipe===
SiO2 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO2<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=700537698 SiO2<nowiki> [IBD] Historical Data</nowiki>]

==Si3N4 [IBD]==

===Standard Recipe===
Si3N4 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si3N4<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2093120876 Si3N4<nowiki> [IBD] Historical Data</nowiki>]
==Ta2O5 [IBD]==

===Standard Recipe===
Ta2O5 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta2O5<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1075234846 Ta2O5<nowiki> [IBD] Historical Data</nowiki>]
==Al2O3 [IBD]==

===Standard Recipe===
Al2O3 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al2O3<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1294329492 Al2O3<nowiki> [IBD] Historical Data</nowiki>]
==TiO2 [IBD]==

===Standard Recipe===
TiO2 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO2<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=1327808550 TiO2<nowiki> [IBD] Historical Data</nowiki>]
==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

Old Deposition Data - NastaziaM 2021-11-22

2021-11-30T18:55:23Z

Nastazia: added hyperlinks of present data

<big>Back to [[Vacuum Deposition Recipes]]</big>

=[[PECVD 1 (PlasmaTherm 790)]]=

==SiO2 [PECVD 1]==

===Standard Recipe===
SiO2 [PECVD 1] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO2<nowiki> [PECVD 1] Present Data</nowiki>]

===Historical Data===
SiO2 [PECVD 1] Historical Data
 
==Si3N4 [PECVD 1]==

===Standard Recipe===
Si3N4 [PECVD 1] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si3N4<nowiki> [PECVD 1] Present Data</nowiki>]

===Historical Data===
Si3N4 [PECVD 1] Historical Data
 

==Low Stress Si3N4 [PECVD 2]==

===Standard Recipe===
Low Stress Si3N4 [PECVD 1] Standard Recipe

===Present Data===
Low Stress Si3N4 [PECVD 1] Present Data

===Historical Data===
Low Stress Si3N4 [PECVD 1] Historical Data
 
==Standard Cleaning Procedure [PECVD 1]==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

===Standard Cleaning Recipe [CF4/O2 Clean]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

==SiO2 [PECVD 2]==

===Standard Recipe===
SiO2 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO2<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
SiO2 [PECVD 2] Historical Data
 
==Si3N4 [PECVD 2]==

===Standard Recipe===
Si3N4 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si3N4<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
Si3N4 [PECVD 2] Historical Data
 

==Low Stress Si3N4 [PECVD 2]==

===Standard Recipe===
Low Stress Si3N4 [PECVD 2] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si3N4<nowiki> [PECVD 2] Present Data</nowiki>]

===Historical Data===
Low Stress Si3N4 [PECVD 2] Historical Data
 
==Standard Cleaning Procedure [PECVD 2]==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===Standard Clean Recipe [STD CF4/O2 Clean recipe]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1 min. clean for every 1 min. deposition
|-
|Si3N4
|1 min. clean for every 7 min of deposition
|-
|If > 29min total dep time
(Season + Dep)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

==Low Deposition Rate SiO2 [ICP-PECVD]==

===Standard Recipe===
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO2<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
Low Deposition Rate SiO2 [ICP-PECVD] Historical Data
 

==High Deposition Rate SiO2 [ICP-PECVD]==

===Standard Recipe===
High Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO2<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
High Deposition Rate SiO2 [ICP-PECVD] Historical Data

==Si3N4 [ICP-PECVD]==

===Standard Recipe===
Si3N4 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Si3N4<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
Si3N4 [ICP-PECVD] Historical Data
 

==Low Stress Si3N4 [ICP-PECVD]==

===Standard Recipe===
Low Stress Si3N4 [ICP-PECVD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 Low Stress Si3N4<nowiki> [ICP-PECVD] Present Data</nowiki>]

===Historical Data===
Low Stress Si3N4 [ICP-PECVD] Historical Data
 
==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===
 
=[[Ion Beam Deposition (Veeco NEXUS)]]=

==SiO2 [IBD]==

===Standard Recipe===
SiO2 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO2<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
SiO2 [IBD] Historical Data
 

==Si3N4 [IBD]==

===Standard Recipe===
Si3N4 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si3N4<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
Si3N4 [IBD] Historical Data
 
==Ta2O5 [IBD]==

===Standard Recipe===
Ta2O5 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta2O5<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
Ta2O5 [IBD] Historical Data
 
==Al2O3 [IBD]==

===Standard Recipe===
Al2O3 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al2O3<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
Al2O3 [IBD] Historical Data

 
==TiO2 [IBD]==

===Standard Recipe===
TiO2 [IBD] Standard Recipe

===Present Data===
[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO2<nowiki> [IBD] Present Data</nowiki>]

===Historical Data===
TiO2 [IBD] Historical Data
 
==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

Old Deposition Data - NastaziaM 2021-11-22

2021-11-30T17:58:37Z

Nastazia: /* Contents */

<big>Back to [[Vacuum Deposition Recipes]]</big>

=[[PECVD 1 (PlasmaTherm 790)]]=

==SiO2 [PECVD 1]==

===Standard Recipe===
SiO2 [PECVD 1] Standard Recipe

===Present Data===
SiO2 [PECVD 1] Present Data

===Historical Data===
SiO2 [PECVD 1] Historical Data
 
==Si3N4 [PECVD 1]==

===Standard Recipe===
Si3N4 [PECVD 1] Standard Recipe

===Present Data===
Si3N4 [PECVD 1] Present Data

===Historical Data===
Si3N4 [PECVD 1] Historical Data
 

==Low Stress Si3N4 [PECVD 2]==

===Standard Recipe===
Low Stress Si3N4 [PECVD 1] Standard Recipe

===Present Data===
Low Stress Si3N4 [PECVD 1] Present Data

===Historical Data===
Low Stress Si3N4 [PECVD 1] Historical Data
 
==Standard Cleaning Procedure [PECVD 1]==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
#Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

===Standard Cleaning Recipe [CF4/O2 Clean]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

=[[PECVD 2 (Advanced Vacuum)]]=

==SiO2 [PECVD 2]==

===Standard Recipe===
SiO2 [PECVD 2] Standard Recipe

===Present Data===
SiO2 [PECVD 2] Present Data

===Historical Data===
SiO2 [PECVD 2] Historical Data
 
==Si3N4 [PECVD 2]==

===Standard Recipe===
Si3N4 [PECVD 2] Standard Recipe

===Present Data===
Si3N4 [PECVD 2] Present Data

===Historical Data===
Si3N4 [PECVD 2] Historical Data
 

==Low Stress Si3N4 [PECVD 2]==

===Standard Recipe===
Low Stress Si3N4 [PECVD 2] Standard Recipe

===Present Data===
Low Stress Si3N4 [PECVD 2] Present Data

===Historical Data===
Low Stress Si3N4 [PECVD 2] Historical Data
 
==Standard Cleaning Procedure [PECVD 2]==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

#(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
#Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

===Standard Clean Recipe [STD CF4/O2 Clean recipe]===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

'''Clean Times (PECVD#2''')
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1 min. clean for every 1 min. deposition
|-
|Si3N4
|1 min. clean for every 7 min of deposition
|-
|If > 29min total dep time
(Season + Dep)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|}

=[[ICP-PECVD (Unaxis VLR)]]=
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

==Low Deposition Rate SiO2 [ICP-PECVD]==

===Standard Recipe===
Low Deposition Rate SiO2 [ICP-PECVD] Standard Recipe

===Present Data===
Low Deposition Rate SiO2 [ICP-PECVD] Present Data

===Historical Data===
Low Deposition Rate SiO2 [ICP-PECVD] Historical Data
 

==High Deposition Rate SiO2 [ICP-PECVD]==

===Standard Recipe===
High SiO2 [ICP-PECVD] Standard Recipe

===Present Data===
High SiO2 [ICP-PECVD] Present Data

===Historical Data===
High SiO2 [ICP-PECVD] Historical Data

==Si3N4 [ICP-PECVD]==

===Standard Recipe===
Si3N4 [ICP-PECVD] Standard Recipe

===Present Data===
Si3N4 [ICP-PECVD] Present Data

===Historical Data===
Si3N4 [ICP-PECVD] Historical Data
 

==Low Stress Si3N4 [ICP-PECVD]==

===Standard Recipe===
Low Stress Si3N4 [ICP-PECVD] Standard Recipe

===Present Data===
Low Stress Si3N4 [ICP-PECVD] Present Data

===Historical Data===
Low Stress Si3N4 [ICP-PECVD] Historical Data
 
==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===
 
=[[Ion Beam Deposition (Veeco NEXUS)]]=

==SiO2 [IBD]==

===Standard Recipe===
SiO2 [IBD] Standard Recipe

===Present Data===
SiO2 [IBD] Present Data

===Historical Data===
SiO2 [IBD] Historical Data
 

==Si3N4 [IBD]==

===Standard Recipe===
Si3N4 [IBD] Standard Recipe

===Present Data===
Si3N4 [IBD] Present Data

===Historical Data===
Si3N4 [IBD] Historical Data
 
==Ta2O5 [IBD]==

===Standard Recipe===
Ta2O5 [IBD] Standard Recipe

===Present Data===
Ta2O5 [IBD] Present Data

===Historical Data===
Ta2O5 [IBD] Historical Data
 
==TiO2 [IBD]==

===Standard Recipe===
TiO2 [IBD] Standard Recipe

===Present Data===
TiO2 [IBD] Present Data

===Historical Data===
TiO2 [IBD] Historical Data
 
==Al2O3 [IBD]==

===Standard Recipe===
Al2O3 [IBD] Standard Recipe

===Present Data===
Al2O3 [IBD] Present Data

===Historical Data===
Al2O3 [IBD] Historical Data
 

==Standard Cleaning Procedure [ICP-PECVD]==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

*SiNx etches at 20nm/min
*SiO2 etches at 40nm/min

===Standard Clean Recipe===

Old Deposition Data - NastaziaM 2021-11-22

2021-11-30T17:57:26Z

Nastazia: Formatting the page, no hyperlinks

Old Deposition Data - NastaziaM 2021-11-22

2021-11-30T15:54:31Z

Nastazia: Copied all current wiki pages: P1, P2, UNAXIS IBD

<big>Back to [[Vacuum Deposition Recipes]].</big>

== Contents ==

* [[PECVD Recipes#PECVD%201%20.28PlasmaTherm%20790.29|1 PECVD 1 (PlasmaTherm 790)]]
** [[PECVD Recipes#Historical%20Particulate%20Data|1.1 Historical Particulate Data]]
** [[PECVD Recipes#SiN%20deposition%20.28PECVD%20.231.29|1.2 SiN deposition (PECVD #1)]]
*** [[PECVD Recipes#Historical%20Data|1.2.1 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties|1.2.1.1 Thin-Film Properties]]
**** [[PECVD Recipes#Uniformity%20Data|1.2.1.2 Uniformity Data]]
** [[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.231.29|1.3 SiO2 deposition (PECVD #1)]]
*** [[PECVD Recipes#Historical%20Data%202|1.3.1 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties%202|1.3.1.1 Thin-Film Properties]]
**** [[PECVD Recipes#Thick-Film%20Properties|1.3.1.2 Thick-Film Properties]]
*** [[PECVD Recipes#Uniformity%20Data%202|1.3.2 Uniformity Data]]
** [[PECVD Recipes#Low-Stress%20SiN%20-%20LS-SiN%20.28PECVD.231.29|1.4 Low-Stress SiN - LS-SiN (PECVD#1)]]
** [[PECVD Recipes#SiOxNy%20deposition%20.28PECVD%20.231.29|1.5 SiOxNy deposition (PECVD #1)]]
** [[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.231.29|1.6 Cleaning Recipes (PECVD #1)]]
*** [[PECVD Recipes#Standard%20Cleaning%20Recipe:%20.22CF4.2FO2%20Clean.22|1.6.1 Standard Cleaning Recipe: "CF4/O2 Clean"]]
* [[PECVD Recipes#PECVD%202%20.28Advanced%20Vacuum.29|2 PECVD 2 (Advanced Vacuum)]]
** [[PECVD Recipes#Historical%20Particulate%20Data%202|2.1 Historical Particulate Data]]
** [[PECVD Recipes#SiO2%20deposition%20.28PECVD%20.232.29|2.2 SiO2 deposition (PECVD #2)]]
*** [[PECVD Recipes#Standard%20Recipe|2.2.1 Standard Recipe]]
*** [[PECVD Recipes#Historical%20Data%203|2.2.2 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties%203|2.2.2.1 Thin-Film Properties]]
**** [[PECVD Recipes#Thin-Film%20Properties%204|2.2.2.2 Thin-Film Properties]]
**** [[PECVD Recipes#Uniformity%20Data%203|2.2.2.3 Uniformity Data]]
** [[PECVD Recipes#SiN%20deposition%20.28PECVD%20.232.29|2.3 SiN deposition (PECVD #2)]]
*** [[PECVD Recipes#Standard%20Recipe%202|2.3.1 Standard Recipe]]
*** [[PECVD Recipes#Historical%20Data%204|2.3.2 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties%205|2.3.2.1 Thin-Film Properties]]
**** [[PECVD Recipes#Uniformity%20Data%204|2.3.2.2 Uniformity Data]]
** [[PECVD Recipes#Low-Stress%20SiN%20deposition%20.28PECVD%20.232.29|2.4 Low-Stress SiN deposition (PECVD #2)]]
*** [[PECVD Recipes#Standard%20Recipe%203|2.4.1 Standard Recipe]]
*** [[PECVD Recipes#Historical%20Data%205|2.4.2 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties%206|2.4.2.1 Thin-Film Properties]]
**** [[PECVD Recipes#Uniformity%20Data%205|2.4.2.2 Uniformity Data]]
** [[PECVD Recipes#Amorphous-Si%20deposition%20.28PECVD%20.232.29|2.5 Amorphous-Si deposition (PECVD #2)]]
** [[PECVD Recipes#Cleaning%20Recipes%20.28PECVD%20.232.29|2.6 Cleaning Recipes (PECVD #2)]]
*** [[PECVD Recipes#Cleaning%20Procedure%20.28PECVD.232.29|2.6.1 Cleaning Procedure (PECVD#2)]]
*** [[PECVD Recipes#Standard%20Clean%20Recipe:%20.22STD%20CF4.2FO2%20Clean%20recipe.22|2.6.2 Standard Clean Recipe: "STD CF4/O2 Clean recipe"]]
*** [[PECVD Recipes#Clean%20Times%20.28PECVD.232.29|2.6.3 Clean Times (PECVD#2)]]
* [[PECVD Recipes#ICP-PECVD%20.28Unaxis%20VLR.29|3 ICP-PECVD (Unaxis VLR)]]
** [[PECVD Recipes#Historical%20Particulate%20Data%203|3.1 Historical Particulate Data]]
** [[PECVD Recipes#Standard%20Recipes|3.2 Standard Recipes]]
** [[PECVD Recipes#SiO2%20LDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.3 SiO2 LDR 250C Deposition (Unaxis VLR)]]
*** [[PECVD Recipes#Historical%20Data%206|3.3.1 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties%207|3.3.1.1 Thin-Film Properties]]
**** [[PECVD Recipes#Uniformity%20Data%206|3.3.1.2 Uniformity Data]]
** [[PECVD Recipes#SiO2%20HDR%20250C%20Deposition%20.28Unaxis%20VLR.29|3.4 SiO2 HDR 250C Deposition (Unaxis VLR)]]
*** [[PECVD Recipes#Historical%20Data%207|3.4.1 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties%208|3.4.1.1 Thin-Film Properties]]
**** [[PECVD Recipes#Uniformity%20Data%207|3.4.1.2 Uniformity Data]]
** [[PECVD Recipes#SiN%20250C%20deposition%20.28Unaxis%20VLR.29|3.5 SiN 250C deposition (Unaxis VLR)]]
*** [[PECVD Recipes#Historical%20Data%208|3.5.1 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties%209|3.5.1.1 Thin-Film Properties]]
**** [[PECVD Recipes#Uniformity%20Data%208|3.5.1.2 Uniformity Data]]
** [[PECVD Recipes#SiN%20LS%20250C%20Deposition%20.28Unaxis%20VLR.29|3.6 SiN LS 250C Deposition (Unaxis VLR)]]
*** [[PECVD Recipes#Historical%20Data%209|3.6.1 Historical Data]]
**** [[PECVD Recipes#Thin-Film%20Properties%2010|3.6.1.1 Thin-Film Properties]]
**** [[PECVD Recipes#Uniformity%20Data%209|3.6.1.2 Uniformity Data]]
** [[PECVD Recipes#Cleaning%20Recipes%20.28Unaxis%20VLR%20Dep.29|3.7 Cleaning Recipes (Unaxis VLR Dep)]]

= [[PECVD 1 (PlasmaTherm 790)]] =

==== Historical Particulate Data ====

* Particulates(Gain4) in PECVD#1-OLD DATA 2015
* Particulates(Gain4) in PECVD#1-OLD DATA 2016
* Particulates(Gain4) in PECVD#1-OLD DATA 2017
* Particulates in PECVD#1 films 2017
* Particulates in PECVD#1 films 2018
* Particulates in PECVD#1 films 2019
* Particulates in PECVD#1 films 2020
* Particulates in PECVD#1 films 2021

== SiN deposition (PECVD #1) ==

* Si3N4 Standard Recipe

==== Historical Data ====

===== Thin-Film Properties =====

* SiN 100nm Data 2014
* SiN 100nm Data 2015
* SiN 100nm Data 2016
* SiN 100nm Data 2017
* SiN 300nm Data 2017
* SiN 300nm Data 2018
* SiN 300nm Data 2019
* SiN 300nm Data 2020
* SiN 300nm Data 2021

===== Uniformity Data =====

* SiN 100 nm Thickness uniformity 2014
* SiN 100 nm Thickness uniformity 2015
* SiN 100 nm Thickness uniformity 2016
* SiN 100 nm Thickness uniformity 2017
* SiN 300nm Thickness uniformity 2017
* SiN 300nm Thickness uniformity 2018
* SiN 300nm Thickness uniformity 2019
* SiN 300nm Thickness uniformity 2020
* SiN 300nm Thickness uniformity 2021

== SiO2 deposition (PECVD #1) ==

* SiO2 Standard Recipe

==== Historical Data ====

===== Thin-Film Properties =====

* SiO2 100nm Data 2014
* SiO2 100nm Data 2015
* SiO2 100nm Data 2016
* SiO2 100nm Data 2017
* SiO2 300nm Data 2017
* SiO2 300nm Data 2018
* SiO2 300nm Data 2019
* SiO2 300nm Data 2020
* SiO2 300nm Data 2021

===== Thick-Film Properties =====

* SiO2 Thick film Data 2021

==== Uniformity Data ====

* SiO2 100nm Thickness uniformity 2014
* SiO2 100 nm Thickness uniformity 2015
* SiO2 100 nmThickness uniformity 2016
* SiO2 100nm Thickness uniformity 2017
* SiO2 300nm Thickness uniformity 2017
* SiO2 300nm Thickness uniformity 2018
* SiO2 300nm Thickness uniformity 2019
* SiO2 300nm Thickness uniformity 2020
* SiO2 300nm Thickness uniformity 2021

== Low-Stress SiN - LS-SiN (PECVD#1) ==

* [[Images/4/4a/New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]]
* LS SiN Data 2014
* LS SiN 1000A Thickness uniformity 2014

== SiOxNy deposition (PECVD #1) ==

* [[Images/2/24/New PECVD1-LS SION-recipe 2014 LS SION recipe.pdf|SiOxNy Standard Recipe]]
* SiOxNy Data 2014
* SiOxNy1000A Thickness uniformity 2014

== Cleaning Recipes (PECVD #1) ==
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

# Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
# Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

=== Standard Cleaning Recipe: "CF4/O2 Clean" ===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.

= [[PECVD 2 (Advanced Vacuum)]] =

==== Historical Particulate Data ====

* Particulates (Gain4) in PECVD#2 2015
* Particulates (Gain4) in PECVD#2 2016
* Particulates (Gain4) in PECVD#2 2017

* Particulates in PECVD#2 films 2017
* Particulates in PECVD#2 films 2018
* Particulates in PECVD#2 films 2019
* Particulates in PECVD#2 films 2020
* Particulates in PECVD#2 films 2021

== SiO2 deposition (PECVD #2) ==

==== Standard Recipe ====

* STD SiO2 Recipe

==== Historical Data ====

===== Thin-Film Properties =====

* Oxide Data 2014
* Oxide Data 2015
* Oxide data 2016
* Oxide Data 2017
* Oxide Data 2018
* Oxide Data 2019
* Oxide Data 2020
* Oxide Data 2021

===== Thin-Film Properties =====

* Thick Oxide Data 2021

===== Uniformity Data =====

* Oxide Thickness Uniformity 2014
* Oxide Thickness Uniformity 2015
* Oxide Thickness Uniformity 2016
* Oxide Thickness Uniformity 2017
* Oxide Thickness Uniformity 2018
* Oxide Thickness Uniformity 2019
* Oxide Thickness Uniformity 2020
* Oxide Thickness Uniformity 2021

== SiN deposition (PECVD #2) ==

==== Standard Recipe ====

* [[Images/4/4c/SiNx Films by PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]]
* STD Nitride2 Recipe

==== Historical Data ====

===== Thin-Film Properties =====

* Nitride2 Data 2014
* Nitride2 Data 2015
* Nitride2 Data 2016
* Nitride2 Data 2017
* Nitride2 Data 2018
* Nitride2 Data 2019
* Nitride2 Data 2020
* Nitride2 Data 2021

===== Uniformity Data =====

* Nitride2 Thickness Uniformity 2014
* Nitride2 Thickness Uniformity 2015
* Nitride2 Thickness Uniformity 2016
* Nitride2 Thickness Uniformity 2017
* Nitride2 Thickness Uniformity 2018
* Nitride2 Thickness Uniformity 2019
* Nitride2 Thickness Uniformity 2020
* Nitride2 Thickness Uniformity 2021

== Low-Stress SiN deposition (PECVD #2) ==
''Low-Stress SilIcon Nitride (< 100 MPa)''

==== Standard Recipe ====

* STD LS Nitride2 Recipe
* ''Old Versions:''
** [[Images/a/a5/New AdvPECVD-LS Nitride2 300C standard recipe LS Nitride2 standard recipe.pdf|LS Nitride2 Standard Recipe 2014-5/9/2018]]
** [[Images/0/01/STD LSNitride2 5-9-18.pdf|STD LSNitride2 5/9/2018]]

==== Historical Data ====

===== Thin-Film Properties =====

* LS Nitride2 Data 2014
* LS Nitride2 Data 2015
* LS Nitride2 Data 2016
* LS Nitride2 Data 2017
* LS Nitride2 Data 2018
* LS Nitride2 Data 2019
* LS Nitride2 Data 2020
* LS Nitride2 Data 2021

===== Uniformity Data =====

* LS Nitride2 Thickness Uniformity 2014
* LS Nitride2 Thickness Uniformity 2015
* LS Nitride2 Thickness Uniformity 2016
* LS Nitride2 Thickness Uniformity 2017
* LS Nitride2 Thickness Uniformity 2018
* LS Nitride2 Thickness Uniformity 2019
* LS Nitride2 Thickness Uniformity 2020
* LS Nitride2 Thickness Uniformity 2021

== Amorphous-Si deposition (PECVD #2) ==

* [[Images/9/9d/03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]]
* [[Images/0/09/ASi deposition and film stress using AV dep tool.pdf|Amorphous Si Films and Their Stress]]

== Cleaning Recipes (PECVD #2) ==

=== Cleaning Procedure (PECVD#2) ===
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

# (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
# Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

=== Standard Clean Recipe: "STD CF4/O2 Clean recipe" ===
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will '''pop up a window for the cleaning time upon running the recipe''' - you do not need to edit the recipe before running it.

=== Clean Times (PECVD#2) ===
{| class="wikitable"
!Film Deposited
!Cleaning Time (Dry)
|-
|SiO2
|1 min. clean for every 1 min. deposition
|-
|Si3N4
|1 min. clean for every 7 min of deposition
|-
|If > 29min total dep time
(Season + Dep)
|Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes
|}

= [[ICP-PECVD (Unaxis VLR)]] =
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|'''new procedures''']] to ensure low particle counts in the chamber.

The system currently has '''Deuterated Silane (SiD4) installed''' - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

==== Historical Particulate Data ====

* Particulates in Unaxis films @250C-2019
* Particulates in Unaxis films @250C-2020

==== Standard Recipes ====

* SiO2 LDR 250C Recipe-2020
* SiO2 HDR 250C Recipe-2020
* SiN 250C Recipe-2020
* SiN LS 250C Recipe-2020

== SiO2 LDR 250C Deposition (Unaxis VLR) ==
''Low-Deposition Rate SiO2''

==== Historical Data ====

===== Thin-Film Properties =====
This data is for 780sec long SiO2 LDR (low deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].

* SiO2 LDR 250C 300nm Data-2019
* SiO2 LDR 250C 300nm Data-2020

===== Uniformity Data =====

* Thickness Uniformity SiO2 LDR 250C 300nm-2019
* Thickness Uniformity SiO2 LDR 250C 300nm-2020

== SiO2 HDR 250C Deposition (Unaxis VLR) ==
''High-Deposition Rate SiO2''

==== Historical Data ====

===== Thin-Film Properties =====
This data is for 180sec long SiO2 HDR ( high deposition rate) deposition, and cleaning time is 900sec, following the procedure [[here]].

* SiO2 HDR 250C 300nm Data-2019
* SiO2 HDR 250C 300nm Data-2020

===== Uniformity Data =====

* Thickness Uniformity SiO2 HDR 250C 300nm-2019
* Thickness Uniformity SiO2 HDR 250C 300nm-2020

== SiN 250C deposition (Unaxis VLR) ==

==== Historical Data ====

===== Thin-Film Properties =====
This data is for 480sec long SiN deposition, and cleaning time is 1500sec, following the procedure [[here]].

* SiN 250C 300nm Data-2020

===== Uniformity Data =====

* Thickness Uniformity SiN 250C 300nm-2020

== SiN LS 250C Deposition (Unaxis VLR) ==
''Low Stress Silicon-Nitride''

==== Historical Data ====
''To Be Added''

===== Thin-Film Properties =====
This data is for 180sec long SiN LS (low stress) deposition, and cleaning time is 1500sec, following the procedure [[here]].

* SiN LS 250C 300nm Data-2020

===== Uniformity Data =====

* Thickness Uniformity SiN LS 250C 300nm-2020

== Cleaning Recipes (Unaxis VLR Dep) ==
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details.

* SiNx etches at 20nm/min
* SiO2 etches at 40nm/min

 

== [[Ion Beam Deposition (Veeco NEXUS)]] ==

* IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
** '''All users are required to enter their calibration deps (simple test deps only)'''
* Particulates in SiO2 and Ta2O5 in 2015

=== SiO2 deposition (IBD) ===

==== SiO2 Historical Data ====

* [[Images/8/8d/New IBD SiO2 Standard Recipe.pdf|SiO2 Standard Recipe]]
* SiO2 Data December 2014
* SiO2 Thickness uniformity 2014
* SiO2 Data-15min depositions 2015
* SiO2 Thickness uniformity-15 min depositions 2015
* SiO2 Data-1hr depositions 2015
* SiO2 Thickness uniformity-1hr depositions 2015
* SiO2 Data-1hr depositions 2016
* SiO2 Thickness uniformity-1hr depositions 2016

==== SiO2 1hr deposition properties: ====

* Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
* HF e.r.~350 nm/min
* Stress ≈ -390MPa (compressive)
* Refractive Index: ≈ 1.494
* [Cauchy Parameters] (350-2000nm):
** A = 1.480
** B = 0.00498
** C = -3.2606e-5

=== Si3N4 deposition (IBD) ===

* [[Images/d/d3/IBD SiNdeposition.pdf|Si3N4 Standard Recipe]]
* Si3N4 Data December 2014
* Si3N4 Thickness uniformity 2014

* Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
* HF e.r.~11nm/min
* Stress ≈ -1590MPa (compressive)
* Refractive Index: ≈ 1.969
* [Cauchy Parameters] (350-2000nm):
** A = 2.000
** B = 0.01974
** C = 1.2478e-4

=== SiOxNy deposition (IBD) ===
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info.
{| class="wikitable"
!
|}
{| class="wikitable"
!IBD SiOxNy: Refractive Index vs. O2/N2 Flow.
!
|}
{| class="wikitable"
!Dep. Rate of IBD SiOxNy vs. Assist O2 flow.
|}

=== Ta2O5 deposition (IBD) ===

==== Ta2O5 Historical Data (IBD) ====

* [[Images/8/85/IBD Ta2O5 deposition details.pdf|Ta2O5 Standard Recipe]]
* Ta2O5 Data December 2014
* Ta2O5 Thickness uniformity 2014

* Ta2O5 Data December-15 min depositions 2015
* Ta2O5 Thickness uniformity-15 min depositions 2015
* Ta2O5 Data December-1hr depositions 2015
* Ta2O5 Thickness uniformity-1hr depositions 2015
* Ta2O5 Data December-1hr depositions 2016
* Ta2O5 Thickness uniformity-1hr depositions 2016

==== Ta2O5 Deposition/Film Properies (IBD) ====

* Ta2O5 1hr depositions:
* Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
* HF e.r.~2 nm/min
* Stress ≈ -232MPa (compressive)
* Refractive Index: ≈ 2.172
* [Cauchy Parameters] (350-2000nm):
** A = 2.1123
** B = 0.018901
** C = -0.016222

=== TiO2 deposition (IBD) ===

* [[Images/3/3b/New IBD TiO2 deposition.pdf|TiO2 Standard Recipe]]
* TiO2 Data December 2014
* TiO2 Thickness uniformity 2014

* Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
* HF etch rate ~5.34nm/min
* Stress ≈ -445MPa (compressive)
* Refractive Index: ≈ 2.259
* [Cauchy Parameters] (350-2000nm):
** A = 2.435
** B = -4.9045e-4
** C = 0.01309
* Absorbing < ~350nm

=== Al2O3 deposition (IBD) ===

* Al2O3 standard recipe: 1_Al2O3_dep

* Al2O3 Data 2018
* Al2O3 Thickness uniformity 2018

* Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)
* HF etch rate ~167nm/min
* Stress ≈ -332MPa (compressive)
* Refractive Index: ≈ 1.656
* [Cauchy Parameters] (350-2000nm):( working on)
** A =
** B =
** C =
* Absorbing < ~350nm

== Reference Recipes (Disabled Tools) ==

=== [[Sputter 2 (SFI Endeavor)|<big>Sputter 2 (SFI Endeavor)</big>]] ===
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''
'''Al Deposition (Sputter 2)'''

* [[Images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf|Al Deposition Recipe]]

'''AlNx Deposition (Sputter 2)'''

* [[Images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf|AlNx Deposition Recipe]]

'''Au Deposition (Sputter 2)'''

* [[Images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf|Au Deposition Recipe]]

'''TiO2 Deposition (Sputter 2)'''

* [[Images/c/c4/22-TiO2-Film-Sputter-2.pdf|TiO22 Deposition Recipe]]