UCSB Nanofab Wiki - User contributions [en]

Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher

2022-05-18T17:43:42Z

Pakala: still a low etch rate on new fl cal

'''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11'''''

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec'''
|-
|Date
|Sample #
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewalls Angle
|Observations/Notes
|SEM Images (45d, cross section)
|-
|5/18/22
|NP_SiO2_Fl_10
|308.7
|1.19
|
|still lower etch rate
|[https://wiki.nanotech.ucsb.edu/w/images/5/5d/SiO2_Fl_10_45D-003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/0/06/SiO2_Fl_10_CS_007.jpg <nowiki>[2]</nowiki>]
|-
|5/10/22
|NP_SiO2_Fl_09
|307.3
|1.15
|
|*etch rate seems lower*
|[https://wiki.nanotech.ucsb.edu/w/images/a/a8/SiO2_Fl_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/SiO2_Fl_09_CS_006.jpg <nowiki>[2]</nowiki>]
|-
|4/26/22
|NP_SiO2_Fl_08
|344.7
|1.4
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c2/SiO2_Fl_08_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/47/SiO2_Fl_08_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/20/22
|NP_SiO2_Fl_07
|354.7
|1.11
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|4/14/22
|NP_SiO2_Fl_06
|352.7
|1.11
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/29/22
|NP_SiO2_Fl_05
|334.7
|1.07
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/09/22
|NP_SiO2_Fl_04
|358.9
|1.06
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/02/22
|NP_SiO2_Fl_03
|347
|1.05
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/38/SiO2_Fl_03_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|2/23/22
|NP_SiO2_Fl_02
|362.7
|1.02
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
|}

{| class="wikitable"
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec''''
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Observations/Notes
|SEM Image
|-
|11/5/2021
|SOFL01
|136
|1.2
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
|-
|02/09/22
|NP_SiO2_Fl_01
|
|
|
|Etched for 210s, all of PR was etched off
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
|}

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Notes/Observations
|SEM Images
|-
|1/28/2021
|FE2102
|309
|0.99
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
|}

File:SiO2 Fl 10 CS 007.jpg

2022-05-18T17:41:37Z

Pakala:

File:SiO2 Fl 10 45D-003.jpg

2022-05-18T17:41:05Z

Pakala:

Oxford ICP Etcher - Process Control Data

2022-05-12T17:48:42Z

Pakala: added new cal to oxford 60c

==Data - InP Ridge Etch (Oxford ICP Etcher)==
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.
|-
!'''Date'''
!'''Sample#'''
!'''Etch Rate (nm/min)'''
!'''Etch Selectivity (InP/SiO2)'''
!'''Comments'''
!'''SEM Images'''
|-
|5/11/22
|NP_60c_010
|322
|9.76
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_10_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/aa/Oxford_60c_10_CS_008.jpg <nowiki>[2]</nowiki>]
|-
|5/4/22
|NP_60c_009
|318
|10.5
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/e8/InP_Oxford_60c_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3a/InP_Oxford_60c_09_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/27/22
|NP_60c_008
|320
|9.2
|directly after chamber clean. Identical results to before chamber clean. Chamber appeared clean when opened.
|[https://wiki.nanotech.ucsb.edu/w/images/b/b4/Oxford_60c_08_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/8d/Oxford_60c_08_CS_009.jpg <nowiki>[2]</nowiki>]
|-
|4/26/22
|NP_60c_007
|312
|9.93
|day before chamber clean
|[https://wiki.nanotech.ucsb.edu/w/images/6/66/Oxford_60c_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_07_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/19/22
|NP_60c_006
|330
|9.53
|Chamber opened and brown gunk observed in chamber right after the etch was done. Etch rate unaffected.
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/Oxford_60c_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/7d/Oxford_60c_06_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/13/22
|NP_60c_005
|320
|11.51
|New mask pattern with long lines to cleave through.
|[https://wiki.nanotech.ucsb.edu/w/images/1/12/Oxford_60c_05_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/56/Oxford_60c_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
!
!
!
!
|''↑ Changed mask pattern going forward (~50% open area), apparent etch rate changes due to measuring different features.''
!
|-
|3/30/22
|NP_60c_004
|427
|11.17
|*etched for 3min*
~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/8/8a/Oxford_60c_04_45D_001.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/0/0a/Oxford_60c_04_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|1/26/22
|NP_1_26_003
|452
|12.9
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>]
|}

===Dependence on Sample Size===
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
{| class="wikitable"
| colspan="8" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive.
|-
!Date
!Sample#
!Sample Size (dimensions, mm)
!Sample Size (area, mm2)
!Etch Rate (nm/min)
!Etch Selectivity (InP/SiO2)
!Comments
!SEM Images
|-
|1/11/22
|DJ_InPRidge
|4.5 x 2.5
|11.25
|602
|64.6nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
|-
|1/12/22
|DJ_InPRidge
|4.5 x 3
|13.5
|563
|76.4nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/d/d1/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal02.pdf]
|-
|1/12/22
|DJ_InP#3
|4.5 x 3
|13.5
|612
|71nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
|-
|1/26/22
|NP_?
|10 x 10
|100
|400-450
|~250nm left
|~30-40% SiO2 masking (NingC's pattern)
|
|-
|1/26/22
|NP_?
|1/4 of 50mm wafer
|490
|378
|276nm left
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/c/c5/Oxford_Cal_01_26_22_New002_CS_002.jpg <nowiki>[1]</nowiki>]
|}

File:Oxford 60c 10 CS 008.jpg

2022-05-12T17:47:40Z

Pakala:

File:Oxford 60c 10 45D 003.jpg

2022-05-12T17:47:04Z

Pakala:

Oxford ICP Etcher - Process Control Data

2022-05-12T16:02:50Z

Pakala: started to enter new cal on oxford60c

==Data - InP Ridge Etch (Oxford ICP Etcher)==
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.
|-
!'''Date'''
!'''Sample#'''
!'''Etch Rate (nm/min)'''
!'''Etch Selectivity (InP/SiO2)'''
!'''Comments'''
!'''SEM Images'''
|-
|5/11/22
|NP_60c_010
|
|
|
|[1] [2]
|-
|5/4/22
|NP_60c_009
|318
|10.5
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/e8/InP_Oxford_60c_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3a/InP_Oxford_60c_09_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/27/22
|NP_60c_008
|320
|9.2
|directly after chamber clean. Identical results to before chamber clean. Chamber appeared clean when opened.
|[https://wiki.nanotech.ucsb.edu/w/images/b/b4/Oxford_60c_08_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/8d/Oxford_60c_08_CS_009.jpg <nowiki>[2]</nowiki>]
|-
|4/26/22
|NP_60c_007
|312
|9.93
|day before chamber clean
|[https://wiki.nanotech.ucsb.edu/w/images/6/66/Oxford_60c_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_07_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/19/22
|NP_60c_006
|330
|9.53
|Chamber opened and brown gunk observed in chamber right after the etch was done. Etch rate unaffected.
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/Oxford_60c_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/7d/Oxford_60c_06_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/13/22
|NP_60c_005
|320
|11.51
|New mask pattern with long lines to cleave through.
|[https://wiki.nanotech.ucsb.edu/w/images/1/12/Oxford_60c_05_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/56/Oxford_60c_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
!
!
!
!
|''↑ Changed mask pattern going forward (~50% open area), apparent etch rate changes due to measuring different features.''
!
|-
|3/30/22
|NP_60c_004
|427
|11.17
|*etched for 3min*
~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/8/8a/Oxford_60c_04_45D_001.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/0/0a/Oxford_60c_04_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|1/26/22
|NP_1_26_003
|452
|12.9
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>]
|}

===Dependence on Sample Size===
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
{| class="wikitable"
| colspan="8" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive.
|-
!Date
!Sample#
!Sample Size (dimensions, mm)
!Sample Size (area, mm2)
!Etch Rate (nm/min)
!Etch Selectivity (InP/SiO2)
!Comments
!SEM Images
|-
|1/11/22
|DJ_InPRidge
|4.5 x 2.5
|11.25
|602
|64.6nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
|-
|1/12/22
|DJ_InPRidge
|4.5 x 3
|13.5
|563
|76.4nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/d/d1/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal02.pdf]
|-
|1/12/22
|DJ_InP#3
|4.5 x 3
|13.5
|612
|71nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
|-
|1/26/22
|NP_?
|10 x 10
|100
|400-450
|~250nm left
|~30-40% SiO2 masking (NingC's pattern)
|
|-
|1/26/22
|NP_?
|1/4 of 50mm wafer
|490
|378
|276nm left
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/c/c5/Oxford_Cal_01_26_22_New002_CS_002.jpg <nowiki>[1]</nowiki>]
|}

Test Data of etching SiO2 with CHF3/CF4

2022-05-11T17:36:44Z

Pakala: added selectivity to ICP2 cals

{| class="wikitable"
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Comments
|SEM Images
|-
|5/5/2022
|NP_ICP2_07
|170
|1.11
|Right after Quartz Top-Plate Temperature reduced 100°C-->50°C. Etch Characteristics look similar to before.
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/ICP2_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/10/ICP2_07_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/26/2022
|NP_ICP2_06
|176.3
|1.14
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/ec/ICP2_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f6/ICP2_06_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/20/2022
|NP_ICP2_05
|171.7
|1.13
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/9c/ICP2_05_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a5/ICP2_05_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/12/2022
|NP_ICP2_04
|167.9
|1.17
|
|[https://wiki.nanotech.ucsb.edu/w/images/6/6b/ICP2_004_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP2_004_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/30/2022
|NP_ICP2_03
|164
|1.23
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP2_02
|144
|1.02
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP2_01
|169.6
|1.29
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
|-
|8/9/2021
|I22105
|140
|0.97
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
|-
|8/9/2021
|I22104
|147
|1.06
|Before etching diamond sample for 1 hour using Cl2/Ar
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
|-
|7/21/2021
|I22103
|134
|1.09
|Investigating reports of low etch rate
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
|-
|5/19/2021
|I22102
|163
|1.11
|Etch time=130 sec
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
|-
|1/7/2021
|I22101
|144
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
|-
|8/9/2020
|I22002
|102
|0.86
|caused by air leaking to CHF3 channel
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
|-
|1/16/2020
|I22001
|149
|1.21
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
|-
|7/18/2019
|I21905
|162
|1.37
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
|-
|3/6/2019
|I21904
|151
|1.23
|85.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
|-
|1/28/2019
|I21901
|146
|1.23
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|-
|10/5/2018
|SiO2#02
|160
|1.2
|82.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
|} 
===Alternate Data (not updated)===
''We stopped taking data for the following table in 2019, use the above data instead.''

*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]

Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher

2022-05-11T17:33:10Z

Pakala: addded entry to fl cals, added selectivity. etch rate is 10% lower

'''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11'''''

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec'''
|-
|Date
|Sample #
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewalls Angle
|Observations/Notes
|SEM Images (45d, cross section)
|-
|5/10/22
|NP_SiO2_Fl_09
|307.3
|1.15
|
|*etch rate seems lower*
|[https://wiki.nanotech.ucsb.edu/w/images/a/a8/SiO2_Fl_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/SiO2_Fl_09_CS_006.jpg <nowiki>[2]</nowiki>]
|-
|4/26/22
|NP_SiO2_Fl_08
|344.7
|1.4
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c2/SiO2_Fl_08_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/47/SiO2_Fl_08_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/20/22
|NP_SiO2_Fl_07
|354.7
|1.11
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|4/14/22
|NP_SiO2_Fl_06
|352.7
|1.11
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/29/22
|NP_SiO2_Fl_05
|334.7
|1.07
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/09/22
|NP_SiO2_Fl_04
|358.9
|1.06
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/02/22
|NP_SiO2_Fl_03
|347
|1.05
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/38/SiO2_Fl_03_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|2/23/22
|NP_SiO2_Fl_02
|362.7
|1.02
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
|}

{| class="wikitable"
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec''''
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Observations/Notes
|SEM Image
|-
|11/5/2021
|SOFL01
|136
|1.2
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
|-
|02/09/22
|NP_SiO2_Fl_01
|
|
|
|Etched for 210s, all of PR was etched off
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
|}

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Notes/Observations
|SEM Images
|-
|1/28/2021
|FE2102
|309
|0.99
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
|}

File:SiO2 Fl 09 CS 006.jpg

2022-05-11T17:28:27Z

Pakala:

File:SiO2 Fl 09 45D 005.jpg

2022-05-11T17:28:03Z

Pakala:

Test Data of etching SiO2 with CHF3/CF4-ICP1

2022-05-11T17:24:36Z

Pakala: added entry in ICP1 cals, added selectivity

{| class="wikitable"
|+'''ICP#1 Recipe:'''
0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|-
|'''Date'''
|'''Sample#'''
|'''Etch Rate (nm/min)'''
|'''Etch Selectivity (SiO2/PR)'''
|'''Averaged Sidewall Angle (o)'''
|'''SEM Images'''
|-
|5/10/2022
|NP_ICP1_07
|146
|1.34
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/a4/ICP1_07_45D_008.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/ICP1_07_CS_006.jpg <nowiki>[2]</nowiki>]
|-
|4/26/2022
|NP_ICP1_06
|139.4
|1.36
|
|[https://wiki.nanotech.ucsb.edu/w/images/5/56/ICP1_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP1_06_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|4/20/2022
|NP_ICP1_05
|140
|1.13
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|4/13/2022
|NP_ICP1_04
|140.3
|1.24
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|3/29/2022
|NP_ICP1_03
|136.9
|1.19
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/ac/ICP1_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e8/ICP1_03_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP1_02
|133.7
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/ICP1_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a0/ICP1_02_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP1_01
|141.4
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/44/ICP1_01_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/ICP1_01_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|1/7/2021
|I12101
|118
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
|-
|3/3/2020
|I12004
|110
|1.05
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
|-
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".''
|-
|2/28/2020
|I12003
|119
|1.17
|56.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
|-
|1/23/2020
|I12002
|109
|1.16
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d4/I1200211.pdf]
|-
| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".''
|-
|1/13/2020
|I12001
|78.0
|1.06
|unusual - two regions
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
|-
|5/29/2019
|I11903
|105
|1.41
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
|-
|1/28/2019
|I11901
|110
|1.35
|see SEM →
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
|}

===OLD Etch Test Data===
Alternate SiO2 etch recipe with O2 included.

{| class="wikitable"
| colspan="5" |ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|SEM Images
|-
|1/28/2019
|I11902
|78.1
|0.63
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/3/33/I11902.pdf]
|-
|5/29/2019
|I11904
|71.1
|0.58
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bc/I11904.pdf]
|}

File:ICP1 07 CS 006.jpg

2022-05-11T17:20:57Z

Pakala:

File:ICP1 07 45D 008.jpg

2022-05-11T17:20:29Z

Pakala:

Test Data of etching SiO2 with CHF3/CF4

2022-05-10T15:58:54Z

Pakala: fixed typo on icp2 cals

{| class="wikitable"
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Comments
|SEM Images
|-
|5/5/2022
|NP_ICP2_07
|170
|
|Right after Quartz Top-Plate Temperature reduced 100°C-->50°C. Etch Characteristics look similar to before.
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/ICP2_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/10/ICP2_07_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/26/2022
|NP_ICP2_06
|176.3
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/ec/ICP2_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f6/ICP2_06_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/20/2022
|NP_ICP2_05
|171.7
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/9c/ICP2_05_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a5/ICP2_05_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/12/2022
|NP_ICP2_04
|167.9
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/6/6b/ICP2_004_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP2_004_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/30/2022
|NP_ICP2_03
|164
|1.23
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP2_02
|144
|1.02
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP2_01
|169.6
|1.29
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
|-
|8/9/2021
|I22105
|140
|0.97
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
|-
|8/9/2021
|I22104
|147
|1.06
|Before etching diamond sample for 1 hour using Cl2/Ar
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
|-
|7/21/2021
|I22103
|134
|1.09
|Investigating reports of low etch rate
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
|-
|5/19/2021
|I22102
|163
|1.11
|Etch time=130 sec
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
|-
|1/7/2021
|I22101
|144
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
|-
|8/9/2020
|I22002
|102
|0.86
|caused by air leaking to CHF3 channel
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
|-
|1/16/2020
|I22001
|149
|1.21
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
|-
|7/18/2019
|I21905
|162
|1.37
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
|-
|3/6/2019
|I21904
|151
|1.23
|85.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
|-
|1/28/2019
|I21901
|146
|1.23
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|-
|10/5/2018
|SiO2#02
|160
|1.2
|82.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
|} 
===Alternate Data (not updated)===
''We stopped taking data for the following table in 2019, use the above data instead.''

*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]

Oxford ICP Etcher - Process Control Data

2022-05-05T19:01:06Z

Pakala: added new entry to oxford 60c cal

==Data - InP Ridge Etch (Oxford ICP Etcher)==
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.
|-
!'''Date'''
!'''Sample#'''
!'''Etch Rate (nm/min)'''
!'''Etch Selectivity (InP/SiO2)'''
!'''Comments'''
!'''SEM Images'''
|-
|5/4/22
|NP_60c_009
|318
|10.5
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/e8/InP_Oxford_60c_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3a/InP_Oxford_60c_09_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/27/22
|NP_60c_008
|320
|9.2
|directly after chamber clean. Identical results to before chamber clean. Chamber appeared clean when opened.
|[https://wiki.nanotech.ucsb.edu/w/images/b/b4/Oxford_60c_08_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/8d/Oxford_60c_08_CS_009.jpg <nowiki>[2]</nowiki>]
|-
|4/26/22
|NP_60c_007
|312
|9.93
|day before chamber clean
|[https://wiki.nanotech.ucsb.edu/w/images/6/66/Oxford_60c_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_07_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/19/22
|NP_60c_006
|330
|9.53
|Chamber opened and brown gunk observed in chamber right after the etch was done. Etch rate unaffected.
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/Oxford_60c_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/7d/Oxford_60c_06_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/13/22
|NP_60c_005
|320
|11.51
|New mask pattern with long lines to cleave through.
|[https://wiki.nanotech.ucsb.edu/w/images/1/12/Oxford_60c_05_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/56/Oxford_60c_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
!
!
!
!
|''↑ Changed mask pattern going forward (~50% open area), apparent etch rate changes due to measuring different features.''
!
|-
|3/30/22
|NP_60c_004
|427
|11.17
|*etched for 3min*
~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/8/8a/Oxford_60c_04_45D_001.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/0/0a/Oxford_60c_04_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|1/26/22
|NP_1_26_003
|452
|12.9
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>]
|}

===Dependence on Sample Size===
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
{| class="wikitable"
| colspan="8" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive.
|-
!Date
!Sample#
!Sample Size (dimensions, mm)
!Sample Size (area, mm2)
!Etch Rate (nm/min)
!Etch Selectivity (InP/SiO2)
!Comments
!SEM Images
|-
|1/11/22
|DJ_InPRidge
|4.5 x 2.5
|11.25
|602
|64.6nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
|-
|1/12/22
|DJ_InPRidge
|4.5 x 3
|13.5
|563
|76.4nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/d/d1/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal02.pdf]
|-
|1/12/22
|DJ_InP#3
|4.5 x 3
|13.5
|612
|71nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
|-
|1/26/22
|NP_?
|10 x 10
|100
|400-450
|~250nm left
|~30-40% SiO2 masking (NingC's pattern)
|
|-
|1/26/22
|NP_?
|1/4 of 50mm wafer
|490
|378
|276nm left
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/c/c5/Oxford_Cal_01_26_22_New002_CS_002.jpg <nowiki>[1]</nowiki>]
|}

File:InP Oxford 60c 09 CS 005.jpg

2022-05-05T18:59:59Z

Pakala:

File:InP Oxford 60c 09 45D 005.jpg

2022-05-05T18:59:32Z

Pakala:

Test Data of etching SiO2 with CHF3/CF4

2022-05-05T18:53:10Z

Pakala: Added new entry to ICP2 cals -- after chuck temperature was lowered

{| class="wikitable"
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Comments
|SEM Images
|-
|5/5/2022
|NP_ICP2_06
|170
|
|Right after Chuck Temperature was Lowered, All Characteristics look similar to before
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/ICP2_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/10/ICP2_07_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/26/2022
|NP_ICP2_06
|176.3
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/ec/ICP2_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f6/ICP2_06_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/20/2022
|NP_ICP2_05
|171.7
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/9c/ICP2_05_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a5/ICP2_05_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/12/2022
|NP_ICP2_04
|167.9
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/6/6b/ICP2_004_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP2_004_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/30/2022
|NP_ICP2_03
|164
|1.23
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP2_02
|144
|1.02
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP2_01
|169.6
|1.29
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
|-
|8/9/2021
|I22105
|140
|0.97
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
|-
|8/9/2021
|I22104
|147
|1.06
|Before etching diamond sample for 1 hour using Cl2/Ar
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
|-
|7/21/2021
|I22103
|134
|1.09
|Investigating reports of low etch rate
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
|-
|5/19/2021
|I22102
|163
|1.11
|Etch time=130 sec
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
|-
|1/7/2021
|I22101
|144
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
|-
|8/9/2020
|I22002
|102
|0.86
|caused by air leaking to CHF3 channel
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
|-
|1/16/2020
|I22001
|149
|1.21
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
|-
|7/18/2019
|I21905
|162
|1.37
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
|-
|3/6/2019
|I21904
|151
|1.23
|85.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
|-
|1/28/2019
|I21901
|146
|1.23
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|-
|10/5/2018
|SiO2#02
|160
|1.2
|82.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
|} 
===Alternate Data (not updated)===
''We stopped taking data for the following table in 2019, use the above data instead.''

*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]

File:ICP2 07 CS 005.jpg

2022-05-05T18:51:12Z

Pakala:

File:ICP2 07 45D 002.jpg

2022-05-05T18:50:36Z

Pakala:

Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher

2022-05-04T16:09:05Z

Pakala: added entry to FL cals

'''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11'''''

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec'''
|-
|Date
|Sample #
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewalls Angle
|Observations/Notes
|SEM Images (45d, cross section)
|-
|4/26/22
|NP_SiO2_Fl_08
|344.7
|
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c2/SiO2_Fl_08_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/47/SiO2_Fl_08_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/20/22
|NP_SiO2_Fl_07
|354.7
|
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|4/14/22
|NP_SiO2_Fl_06
|352.7
|*need to measure PR
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/29/22
|NP_SiO2_Fl_05
|334.7
|1.07
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/09/22
|NP_SiO2_Fl_04
|358.9
|1.06
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/02/22
|NP_SiO2_Fl_03
|347
|1.05
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/38/SiO2_Fl_03_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|2/23/22
|NP_SiO2_Fl_02
|362.7
|1.02
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
|}

{| class="wikitable"
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec''''
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Observations/Notes
|SEM Image
|-
|11/5/2021
|SOFL01
|136
|1.2
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
|-
|02/09/22
|NP_SiO2_Fl_01
|
|
|
|Etched for 210s, all of PR was etched off
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
|}

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Notes/Observations
|SEM Images
|-
|1/28/2021
|FE2102
|309
|0.99
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
|}

File:SiO2 Fl 08 CS 005.jpg

2022-05-04T16:08:15Z

Pakala:

File:SiO2 Fl 08 45D 004.jpg

2022-05-04T16:07:47Z

Pakala:

Unaxis VLR Etch - Process Control Data

2022-04-28T21:15:51Z

Pakala: added new entry to unaxis cals

{{WIP}}

==Data - InP Ridge Etch (Unaxis VLR)==
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec)
''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.

''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes.
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (InP/SiO2)
|Comments
|SEM Images
|-
|4/28/22
|NP_Unaxis_03
|1.51
|22.2
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/ae/Unaxis_03_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a8/Unaxis_03_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/30/22
|NP_Unaxis_02
|1.41
|14.6
|
|[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/9/22
|NP_Unaxis_01
|1.30
|15.3
|
|[https://wiki.nanotech.ucsb.edu/w/images/3/3e/Unaxis_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/71/Unaxis_01_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|11/8/2021
|InP#2102
|1.24
|13.8
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf][https://wiki.nanotech.ucsb.edu/w/images/4/49/IP210212.pdf]
|-
|2/3/2021
|InP#2101
|1.30
|16
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]
|-
|8/30/2020
|InP#2001
|1.11
|10.4
|
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]
|-
|1/31/2019
|InP#1901
|0.88
|9.7
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]
|-
|12/10/2018
|InP#1809
|1.01
|11.4
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]
|-
|10/3/2018
|InP#1808
|1.01
|13.7
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]
|-
|8/7/2018
|InP#1807
|0.81
|8.0
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]
|-
|5/22/2018
|InP#1806
|0.88
|8.4
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]
|-
|4/26/2018
|InP#1805
|1.29
|13.6
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]
|-
|4/10/2018
|InP#1804
|1.12
|12.8
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]
|-
|4/5/2018
|InP#1803
|1.05
|11.9
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]
|-
|3/1/2018
|InP#1802
|0.96
|9
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]
|-
|1/2/2018
|InP#1801
|1.44
|14.3
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]
|-
|12/7/2017
|InP#1714
|0.96
|10.4
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]
|-
|11/21/2017
|InP#1713
|1.04
|12.1
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]
|-
|10/23/2017
|InP#1712
|1.11
|13.1
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]
|-
|10/11/2017
|InP#1711
|1
|11
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]
|-
|8/28/2017
|InP#1710
|1
|11.7
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]
|-
|8/16/2017
|InP#1709
|0.76
|8
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]
|-
|7/6/2017
|InP#1708
|0.98
|12.1
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]
|-
|5/19/2017
|InP#1707
|0.82
|9.9
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]
|-
|5/4/2017
|InP#1706
|0.84
|11
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]
|-
|4/20/2017
|inP#1705
|0.88
|10.2
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]
|-
|3/21/2017
|InP#1704
|1.01
|11.3
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]
|-
|2/21/2017
|InP#1703
|0.91
|11.3
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]
|-
|2/7/2017
|InP#1702
|0.75
|7.7
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]
|-
|1/23/2017
|InP#1701
|0.93
|9.4
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]
|-
|12/15/2016
|InP#1615
|0.91
|9.3
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]
|-
|12/1/2016
|InP#1614
|0.96
|12.1
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]
|-
|10/4/2016
|InP#1613
|0.92
|8.9
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]
|}

File:Unaxis 03 CS 003.jpg

2022-04-28T21:13:33Z

Pakala:

File:Unaxis 03 45D 003.jpg

2022-04-28T21:12:58Z

Pakala:

Oxford ICP Etcher - Process Control Data

2022-04-28T21:09:51Z

Pakala: added entry to Oxford 60c cals

==Data - InP Ridge Etch (Oxford ICP Etcher)==
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (InP/SiO2)
|Comments
|SEM Images
|-
|4/27/22
|NP_60c_008
|320
|9.2
|directly after chamber clean
|[https://wiki.nanotech.ucsb.edu/w/images/b/b4/Oxford_60c_08_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/8d/Oxford_60c_08_CS_009.jpg <nowiki>[2]</nowiki>]
|-
|4/26/22
|NP_60c_007
|312
|9.93
|day before chamber clean
|[https://wiki.nanotech.ucsb.edu/w/images/6/66/Oxford_60c_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_07_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/19/22
|NP_60c_006
|330
|9.53
|brown gunk found in chamber right after the etch was done--may be cause of lower etch rates recently
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/Oxford_60c_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/7d/Oxford_60c_06_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/13/22
|NP_60c_005
|320
|11.51
|
|[https://wiki.nanotech.ucsb.edu/w/images/1/12/Oxford_60c_05_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/56/Oxford_60c_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/30/22
|NP_60c_004
|427
|11.17
|*etched for 3min*
|[https://wiki.nanotech.ucsb.edu/w/images/8/8a/Oxford_60c_04_45D_001.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/0/0a/Oxford_60c_04_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|1/26/22
|NP_1_26_003
|452
|12.9
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|1/26/22
|NP_1_26_001
|~400nm
|~7
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/d/dc/Oxford_Cal_1_26_22_001_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/Oxford_Cal_1_26_22_001_CS_004.jpg <nowiki>[2]</nowiki>]
|}

===Dependence on Sample Size===
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
{| class="wikitable"
| colspan="8" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive.
|-
|Date
|Sample#
|Sample Size (dimensions, mm)
|Sample Size (area, mm2)
|Etch Rate (nm/min)
|Etch Selectivity (InP/SiO2)
|Comments
|SEM Images
|-
|1/11/22
|DJ_InPRidge
|4.5 x 2.5
|11.25
|602
|64.6nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
|-
|1/12/22
|DJ_InPRidge
|4.5 x 3
|13.5
|563
|76.4nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/d/d1/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal02.pdf]
|-
|1/12/22
|DJ_InP#3
|4.5 x 3
|13.5
|612
|71nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
|-
|1/26/22
|NP_?
|10 x 10
|100
|400-450
|~250nm left
|~30-40% SiO2 masking (NingC's pattern)
|
|-
|1/26/22
|NP_?
|1/4 of 50mm wafer
|490
|378
|276nm left
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/c/c5/Oxford_Cal_01_26_22_New002_CS_002.jpg <nowiki>[1]</nowiki>]
|}

File:Oxford 60c 08 CS 009.jpg

2022-04-28T21:04:49Z

Pakala:

File:Oxford 60c 08 45D 003.jpg

2022-04-28T21:04:07Z

Pakala:

Unaxis VLR Etch - Process Control Data

2022-04-27T18:08:40Z

Pakala: merged the two sets of ICP cal data

{{WIP}}

==Data - InP Ridge Etch (Unaxis VLR)==
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''': 200°C, 1.4mT, 800W/125W, Cl2=6.3, H2=12.7, Ar=2.0 sccm, time=1min30sec (90sec)
''Sample Size:'' 1x1cm epi-grade InP, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.

''Conditioning:'' Prior to the etch, do O2 clean 15 minutes, then, chamber coating with the same recipe on 1/4-2" InP on Silicon carrier for 15 minutes.
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (InP/SiO2)
|Comments
|SEM Images
|-
|3/30/22
|NP_Unaxis_02
|1413
|14.6
|
|[https://wiki.nanotech.ucsb.edu/w/images/8/84/Unaxis_02_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/60/Unaxis_02_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/9/22
|NP_Unaxis_01
|1297
|15.3
|
|[https://wiki.nanotech.ucsb.edu/w/images/3/3e/Unaxis_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/71/Unaxis_01_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|11/8/2021
|InP#2102
|1.24
|13.8
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/45/IP210201.pdf][https://wiki.nanotech.ucsb.edu/w/images/4/49/IP210212.pdf]
|-
|2/3/2021
|InP#2101
|1.30
|16
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]
|-
|8/30/2020
|InP#2001
|1.11
|10.4
|
|[https://wiki.nanotech.ucsb.edu/w/images/8/8d/IP020104.pdf]
|-
|1/31/2019
|InP#1901
|0.88
|9.7
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b7/IP190101.pdf][https://wiki.nanotech.ucsb.edu/wiki/images/0/06/IP190103.pdf]
|-
|12/10/2018
|InP#1809
|1.01
|11.4
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/84/IP180909.pdf]
|-
|10/3/2018
|InP#1808
|1.01
|13.7
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e5/IP180805.pdf]
|-
|8/7/2018
|InP#1807
|0.81
|8.0
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fb/IP180705.pdf]
|-
|5/22/2018
|InP#1806
|0.88
|8.4
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/e1/IP180606.pdf]
|-
|4/26/2018
|InP#1805
|1.29
|13.6
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c8/IP180508.pdf]
|-
|4/10/2018
|InP#1804
|1.12
|12.8
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/17/IP180406.pdf]
|-
|4/5/2018
|InP#1803
|1.05
|11.9
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c7/IP180304.pdf]
|-
|3/1/2018
|InP#1802
|0.96
|9
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/65/IP180207.pdf]
|-
|1/2/2018
|InP#1801
|1.44
|14.3
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/0d/IP180104.pdf]
|-
|12/7/2017
|InP#1714
|0.96
|10.4
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/03/IP173306.pdf]
|-
|11/21/2017
|InP#1713
|1.04
|12.1
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/02/IP173203.pdf]
|-
|10/23/2017
|InP#1712
|1.11
|13.1
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/4/41/IP173107.pdf]
|-
|10/11/2017
|InP#1711
|1
|11
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/97/IP173009.pdf]
|-
|8/28/2017
|InP#1710
|1
|11.7
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/aa/IP172905.pdf]
|-
|8/16/2017
|InP#1709
|0.76
|8
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fa/IP172805.pdf]
|-
|7/6/2017
|InP#1708
|0.98
|12.1
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/a/ac/IP172520.pdf]
|-
|5/19/2017
|InP#1707
|0.82
|9.9
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170706.pdf]
|-
|5/4/2017
|InP#1706
|0.84
|11
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d1/IP170603.pdf]
|-
|4/20/2017
|inP#1705
|0.88
|10.2
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/5/5b/IP170505.pdf]
|-
|3/21/2017
|InP#1704
|1.01
|11.3
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/fd/IP170404.pdf]
|-
|2/21/2017
|InP#1703
|0.91
|11.3
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b8/IP170302.pdf]
|-
|2/7/2017
|InP#1702
|0.75
|7.7
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/2f/IP170208.pdf]
|-
|1/23/2017
|InP#1701
|0.93
|9.4
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/7/7f/IP170106.pdf]
|-
|12/15/2016
|InP#1615
|0.91
|9.3
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/6/64/IP161510.pdf]
|-
|12/1/2016
|InP#1614
|0.96
|12.1
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ed/IP161421.pdf]
|-
|10/4/2016
|InP#1613
|0.92
|8.9
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/9/9b/IP161332.pdf]
|}

Oxford ICP Etcher - Process Control Data

2022-04-26T20:32:48Z

Pakala: added new entry to oxford 60c cal

==Data - InP Ridge Etch (Oxford ICP Etcher)==
[[PECVD1-(PlasmaTherm 790)|PECVD SiO2]] hardmask, patterned on [[Stepper 1 (GCA 6300)|Stepper #2 (AutoStep 200)]] & [[ICP Etch 1 (Panasonic E626I)|Panasonic ICP #1]]
{| class="wikitable"
| colspan="6" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min00sec (300sec)
Sample Size: 1x1cm, ~30-40% SiO2 masking (NingC's pattern). Silicon carrier, no adhesive.
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (InP/SiO2)
|Comments
|SEM Images
|-
|4/27/22
|
|
|
|directly after chamber clean
|
|-
|4/26/22
|NP_60c_007
|312
|9.93
|day before chamber clean
|[https://wiki.nanotech.ucsb.edu/w/images/6/66/Oxford_60c_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/2/25/Oxford_60c_07_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/19/22
|NP_60c_006
|330
|9.53
|brown gunk found in chamber right after the etch was done--may be cause of lower etch rates recently
|[https://wiki.nanotech.ucsb.edu/w/images/0/03/Oxford_60c_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/7d/Oxford_60c_06_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|4/13/22
|NP_60c_005
|320
|11.51
|
|[https://wiki.nanotech.ucsb.edu/w/images/1/12/Oxford_60c_05_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/56/Oxford_60c_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/30/22
|NP_60c_004
|427
|11.17
|*etched for 3min*
|[https://wiki.nanotech.ucsb.edu/w/images/8/8a/Oxford_60c_04_45D_001.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/0/0a/Oxford_60c_04_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|1/26/22
|NP_1_26_003
|452
|12.9
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/Oxford_Cal_01_26_22_003New_45d_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cal_01_26_22_031New_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|1/26/22
|NP_1_26_001
|~400nm
|~7
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/d/dc/Oxford_Cal_1_26_22_001_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/Oxford_Cal_1_26_22_001_CS_004.jpg <nowiki>[2]</nowiki>]
|}

===Dependence on Sample Size===
We have found that the size of the InP piece loaded (no adhesive, onto Silicon carrier wafer) affects the etch rate, but does not affect the etch profile - ie. etches are still smooth and vertical, but rate varies with sample area.
{| class="wikitable"
| colspan="8" |'''InP Ridge Etch''': 60°C, 3mT, 800W/65W, Cl2=18, H2=15, CH4=10sccm, time=5min05sec (305sec)
Silicon carrier, no adhesive.
|-
|Date
|Sample#
|Sample Size (dimensions, mm)
|Sample Size (area, mm2)
|Etch Rate (nm/min)
|Etch Selectivity (InP/SiO2)
|Comments
|SEM Images
|-
|1/11/22
|DJ_InPRidge
|4.5 x 2.5
|11.25
|602
|64.6nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/9/90/2022-01-11_Oxford_InP_Ridge_Wiki_Post_-_Cal01.pdf]
|-
|1/12/22
|DJ_InPRidge
|4.5 x 3
|13.5
|563
|76.4nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/d/d1/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal02.pdf]
|-
|1/12/22
|DJ_InP#3
|4.5 x 3
|13.5
|612
|71nm left
|~50% SiO2 masking (GCA Calibration pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/f/ff/2022-01-12_Oxford_InP_Ridge_Wiki_Post_-_Cal03.pdf]
|-
|1/26/22
|NP_?
|10 x 10
|100
|400-450
|~250nm left
|~30-40% SiO2 masking (NingC's pattern)
|
|-
|1/26/22
|NP_?
|1/4 of 50mm wafer
|490
|378
|276nm left
|~30-40% SiO2 masking (NingC's pattern)
|[https://wiki.nanotech.ucsb.edu/w/images/c/c5/Oxford_Cal_01_26_22_New002_CS_002.jpg <nowiki>[1]</nowiki>]
|}

File:Oxford 60c 07 CS 001.jpg

2022-04-26T20:31:20Z

Pakala:

File:Oxford 60c 07 45D 002.jpg

2022-04-26T20:30:50Z

Pakala:

Test Data of etching SiO2 with CHF3/CF4

2022-04-26T20:27:18Z

Pakala: added new entry to ICP2 cals

{| class="wikitable"
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|SEM Images
|-
|4/26/2022
|NP_ICP2_06
|176.3
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/e/ec/ICP2_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f6/ICP2_06_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/20/2022
|NP_ICP2_05
|171.7
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/9c/ICP2_05_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a5/ICP2_05_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/12/2022
|NP_ICP2_04
|167.9
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/6/6b/ICP2_004_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP2_004_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/30/2022
|NP_ICP2_03
|164
|1.23
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP2_02
|144
|1.02
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP2_01
|169.6
|1.29
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
|-
|8/9/2021
|I22105
|140
|0.97
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
|-
|8/9/2021
|I22104
|147
|1.06
|Before etching diamond sample for 1 hour using Cl2/Ar
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
|-
|7/21/2021
|I22103
|134
|1.09
|Investigating reports of low etch rate
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
|-
|5/19/2021
|I22102
|163
|1.11
|Etch time=130 sec
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
|-
|1/7/2021
|I22101
|144
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
|-
|8/9/2020
|I22002
|102
|0.86
|caused by air leaking to CHF3 channel
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
|-
|1/16/2020
|I22001
|149
|1.21
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
|-
|7/18/2019
|I21905
|162
|1.37
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
|-
|3/6/2019
|I21904
|151
|1.23
|85.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
|-
|1/28/2019
|I21901
|146
|1.23
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|-
|10/5/2018
|SiO2#02
|160
|1.2
|82.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
|} 
===Alternate Data (not updated)===
''We stopped taking data for the following table in 2019, use the above data instead.''

*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]

File:ICP2 06 CS 001.jpg

2022-04-26T20:26:32Z

Pakala:

File:ICP2 06 45D 002.jpg

2022-04-26T20:26:01Z

Pakala:

Test Data of etching SiO2 with CHF3/CF4-ICP1

2022-04-26T20:24:08Z

Pakala: added entry to ICP1 cals

{| class="wikitable"
|+'''ICP#1 Recipe:'''
0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|-
|'''Date'''
|'''Sample#'''
|'''Etch Rate (nm/min)'''
|'''Etch Selectivity (SiO2/PR)'''
|'''Averaged Sidewall Angle (o)'''
|'''SEM Images'''
|-
|4/26/2022
|NP_ICP1_06
|139.4
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/5/56/ICP1_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP1_06_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|4/20/2022
|NP_ICP1_05
|140
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|4/13/2022
|NP_ICP1_04
|140.3
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|3/29/2022
|NP_ICP1_03
|136.9
|1.19
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/ac/ICP1_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e8/ICP1_03_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP1_02
|133.7
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/ICP1_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a0/ICP1_02_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP1_01
|141.4
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/44/ICP1_01_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/ICP1_01_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|1/7/2021
|I12101
|118
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
|-
|3/3/2020
|I12004
|110
|1.05
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
|-
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".''
|-
|2/28/2020
|I12003
|119
|1.17
|56.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
|-
|1/23/2020
|I12002
|109
|1.16
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d4/I1200211.pdf]
|-
| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".''
|-
|1/13/2020
|I12001
|78.0
|1.06
|unusual - two regions
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
|-
|5/29/2019
|I11903
|105
|1.41
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
|-
|1/28/2019
|I11901
|110
|1.35
|see SEM →
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
|}

===OLD Etch Test Data===
Alternate SiO2 etch recipe with O2 included.

{| class="wikitable"
| colspan="5" |ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|SEM Images
|-
|1/28/2019
|I11902
|78.1
|0.63
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/3/33/I11902.pdf]
|-
|5/29/2019
|I11904
|71.1
|0.58
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bc/I11904.pdf]
|}

File:ICP1 06 CS 002.jpg

2022-04-26T20:23:22Z

Pakala:

File:ICP1 06 45D 002.jpg

2022-04-26T20:22:57Z

Pakala:

Unaxis VLR Etch - Process Control Data

2022-04-21T18:20:29Z

Pakala: edited recipe on Unaxis Process control data

Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher

2022-04-21T18:17:05Z

Pakala: fixed typo

'''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11'''''

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec'''
|-
|Date
|Sample #
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewalls Angle
|Observations/Notes
|SEM Images (45d, cross section)
|-
|4/20/22
|NP_SiO2_Fl_07
|354.7
|
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|4/14/22
|NP_SiO2_Fl_06
|352.7
|*need to measure PR
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/29/2022
|NP_SiO2_Fl_05
|334.7
|1.07
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/09/22
|NP_SiO2_Fl_04
|358.9
|1.06
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/02/22
|NP_SiO2_Fl_03
|347
|1.05
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/38/SiO2_Fl_03_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|2/23/22
|NP_SiO2_Fl_02
|362.7
|1.02
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
|}

{| class="wikitable"
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec''''
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Observations/Notes
|SEM Image
|-
|11/5/2021
|SOFL01
|136
|1.2
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
|-
|02/09/22
|NP_SiO2_Fl_01
|
|
|
|Etched for 210s, all of PR was etched off
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
|}

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Notes/Observations
|SEM Images
|-
|1/28/2021
|FE2102
|309
|0.99
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
|}

Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher

2022-04-21T18:09:33Z

Pakala: added entry to FL cals

'''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11'''''

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec'''
|-
|Date
|Sample #
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewalls Angle
|Observations/Notes
|SEM Images (45d, cross section)
|-
|4/20/22
|NP_SiO2_Fl
|354.7
|
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|4/14/22
|NP_SiO2_Fl_06
|352.7
|*need to measure PR
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/29/2022
|NP_SiO2_Fl_05
|334.7
|1.07
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/09/22
|NP_SiO2_Fl_04
|358.9
|1.06
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/02/22
|NP_SiO2_Fl_03
|347
|1.05
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/38/SiO2_Fl_03_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|2/23/22
|NP_SiO2_Fl_02
|362.7
|1.02
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
|}

{| class="wikitable"
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec''''
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Observations/Notes
|SEM Image
|-
|11/5/2021
|SOFL01
|136
|1.2
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
|-
|02/09/22
|NP_SiO2_Fl_01
|
|
|
|Etched for 210s, all of PR was etched off
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
|}

{| class="wikitable"
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|Notes/Observations
|SEM Images
|-
|1/28/2021
|FE2102
|309
|0.99
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
|}

File:SiO2 Fl 07 CS 004.jpg

2022-04-21T18:08:22Z

Pakala:

File:SiO2 Fl 07 45D 003.jpg

2022-04-21T18:07:52Z

Pakala:

Test Data of etching SiO2 with CHF3/CF4

2022-04-21T18:02:13Z

Pakala: added new entry to ICP2 cals

{| class="wikitable"
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|SEM Images
|-
|4/20/22
|NP_ICP2_05
|171.7
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/9c/ICP2_05_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a5/ICP2_05_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|4/12/2022
|NP_ICP2_04
|167.9
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/6/6b/ICP2_004_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP2_004_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/30/2022
|NP_ICP2_03
|164
|1.23
|
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP2_02
|144
|1.02
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP2_01
|169.6
|1.29
|
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
|-
|8/9/2021
|I22105
|140
|0.97
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
|-
|8/9/2021
|I22104
|147
|1.06
|Before etching diamond sample for 1 hour using Cl2/Ar
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
|-
|7/21/2021
|I22103
|134
|1.09
|Investigating reports of low etch rate
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
|-
|5/19/2021
|I22102
|163
|1.11
|Etch time=130 sec
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
|-
|1/7/2021
|I22101
|144
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
|-
|8/9/2020
|I22002
|102
|0.86
|caused by air leaking to CHF3 channel
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
|-
|1/16/2020
|I22001
|149
|1.21
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
|-
|7/18/2019
|I21905
|162
|1.37
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
|-
|3/6/2019
|I21904
|151
|1.23
|85.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
|-
|1/28/2019
|I21901
|146
|1.23
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|-
|10/5/2018
|SiO2#02
|160
|1.2
|82.1
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
|} 
===Alternate Data (not updated)===
''We stopped taking data for the following table in 2019, use the above data instead.''

*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]

File:ICP2 05 CS 001.jpg

2022-04-21T18:01:18Z

Pakala:

File:ICP2 05 45D 003.jpg

2022-04-21T18:00:56Z

Pakala:

Test Data of etching SiO2 with CHF3/CF4-ICP1

2022-04-21T17:58:08Z

Pakala: added entry to ICP1 cals

{| class="wikitable"
|+'''ICP#1 Recipe:'''
0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|-
|'''Date'''
|'''Sample#'''
|'''Etch Rate (nm/min)'''
|'''Etch Selectivity (SiO2/PR)'''
|'''Averaged Sidewall Angle (o)'''
|'''SEM Images'''
|-
|4/20/2022
|NP_ICP1_05
|140
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP1_05_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/72/ICP1_05_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|4/13/2022
|NP_ICP1_04
|140.3
|
|
|[https://wiki.nanotech.ucsb.edu/w/images/9/98/ICP1_004_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/45/ICP1_004_CS_001.jpg <nowiki>[2]</nowiki>]
|-
|3/29/2022
|NP_ICP1_03
|136.9
|1.19
|
|[https://wiki.nanotech.ucsb.edu/w/images/a/ac/ICP1_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e8/ICP1_03_CS_005.jpg <nowiki>[2]</nowiki>]
|-
|3/8/2022
|NP_ICP1_02
|133.7
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/1/14/ICP1_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a0/ICP1_02_CS_002.jpg <nowiki>[2]</nowiki>]
|-
|3/2/2022
|NP_ICP1_01
|141.4
|1.20
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/44/ICP1_01_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/87/ICP1_01_CS_003.jpg <nowiki>[2]</nowiki>]
|-
|1/7/2021
|I12101
|118
|1.12
|
|[https://wiki.nanotech.ucsb.edu/w/images/4/49/I1210113.pdf]
|-
|3/3/2020
|I12004
|110
|1.05
|
|[https://wiki.nanotech.ucsb.edu/w/images/b/b3/I1200415.pdf]
|-
| colspan="6" |''Sidewall profile on 2/28/2020 etches is slanted, chamber will be wet-cleaned on 3/2/2020 and re-tested. Data for 3/3 shows etch returned to "normal".''
|-
|2/28/2020
|I12003
|119
|1.17
|56.6
|[https://wiki.nanotech.ucsb.edu/wiki/images/e/ec/I1200301.pdf]
|-
|1/23/2020
|I12002
|109
|1.16
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/d/d4/I1200211.pdf]
|-
| colspan="6" |''Rate on 1/13/2020 is low by ~20%, so chamber was wet-cleaned on 1/21/2020. Data below for 1/23 shows rate returned to "normal".''
|-
|1/13/2020
|I12001
|78.0
|1.06
|unusual - two regions
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bb/I1200107.pdf]
|-
|5/29/2019
|I11903
|105
|1.41
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/c/c6/I11903.pdf]
|-
|1/28/2019
|I11901
|110
|1.35
|see SEM →
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/b1/I11901.pdf]
|}

===OLD Etch Test Data===
Alternate SiO2 etch recipe with O2 included.

{| class="wikitable"
| colspan="5" |ICP#1: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
|
|-
|Date
|Sample#
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (o)
|SEM Images
|-
|1/28/2019
|I11902
|78.1
|0.63
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/3/33/I11902.pdf]
|-
|5/29/2019
|I11904
|71.1
|0.58
|
|[https://wiki.nanotech.ucsb.edu/wiki/images/b/bc/I11904.pdf]
|}

File:ICP1 05 CS 002.jpg

2022-04-21T17:57:08Z

Pakala: