UCSB Nanofab Wiki - User contributions [en]

Contact Alignment Recipes

2013-10-06T04:44:09Z

Ray t:

{{recipes|Lithography}}

= Notes =

Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

= [[Suss Aligners (SUSS MJB-3)]] =

==Positive Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="100" | Bake
! width="100" | Thickness
! width="125" | Exposure Time
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| AZ4110
| 4 krpm/30”
| 95°C/60”
| ~ 1.1 um
| 8”
| AZ400K:DI 1:4
| 50"
| align="left" |
|-
| AZ4210
| 4 krpm/30”
| 95°C/60”
| ~ 2.1 um
| 13”
| AZ400K:DI 1:4
| 70”
| align="left" |
|-
| AZ4330
| 4 krpm/30”
| 95°C/60”
| ~ 3.3 um
| 18”
| AZ400K:DI 1:4
| 90”
| align="left" |
|-
| SPR220-3.0
| 3.5 krpm/30”
| 115°C/90”
| ~ 2.5 um
| 25”
| AZ300MIF
| 50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
| SPR220-7.0
| 3.5 krpm/45”
| 115°C/120”
| ~ 7.5 um
| 60”
| AZ300MIF
| 70”
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}

==Negative Resist (MJB-3)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="100" | Bake
! width="100" | Thickness
! width="125" | Exposure Time
! width="100" | PEB
! width="100" | Flood
! width="125" | Developer
! width="125" | Developer Time
! width="350" | Comments
|-
| AZ5214
| 6 krpm/30”
| 95°C/60”
| ~ 1 um
| 5”
| 110°C/60”
| 60”
| AZ400K:DI 1:5.5 or AZ300MIF
| 60" 45"
| align="left" |
*Concentrated 400K Dev. Etches 5214

|-
| AZ5214
| 6 krpm/30”
| 95°C/60”
| ~ 1 um
| 10”
| 110°C/60”
| 60”
| AZ300MIF
| 45”
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
| AZnLOF2020
| 3 krpm/30”
| 110°C/90”
| ~ 2.1 um
| 10”
| 110°C/60”
|
| AZ300MIF
| 60”
| align="left" |
*Use i-line filter
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|}

= [[Contact Aligner (SUSS MA-6)]] =

==Positive Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 18.1 mW/cm2 (Channel 1). Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="100" | Bake
! width="100" | Thickness
! width="125" | Exposure Time
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| AZ4110
| 4 krpm/30”
| 95°C/60”
| ~ 1.1 um
| 3.3”
| AZ400K:DI 1:4
| 50"
| align="left" |
|-
| AZ4210
| 4 krpm/30”
| 95°C/60”
| ~ 2.1 um
| 5.4”
| AZ400K:DI 1:4
| 70”
| align="left" |
|-
| AZ4330
| 4 krpm/30”
| 95°C/60”
| ~ 3.3 um
| 7.5”
| AZ400K:DI 1:4
| 90”
| align="left" |
|-
| SPR955CM-0.9
| 3 krpm/30”
| 95°C/60”
| ~ 0.9 um
| 8”
| AZ300MIF
| 70”
| align="left" |
*Post Exposure Bake 110°C /60”
|-
| SPR220-3.0
| 3.5 krpm/30”
| 115°C/90”
| ~ 2.5 um
| 10.4”
| AZ300MIF
| 50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330

|-
| SPR220-7.0
| 3.5 krpm/45”
| 115°C/120”
| ~ 7.5 um
| 25”
| AZ300MIF
| 70”
| align="left" |
|}

==Negative Resist (MA-6)== 
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 18.1 mW/cm2 (Channel 1). Power of the lamp is set using the 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="100" | Bake
! width="100" | Thickness
! width="125" | Exposure Time
! width="100" | PEB
! width="100" | Flood
! width="125" | Developer
! width="125" | Developer Time
! width="350" | Comments
|-
| AZ5214
| 6 krpm/30”
| 95°C/60”
| ~ 1 um
| 2.1”
| 110°C/60”
| 60” (at 7.5 mW/cm2)
| AZ400K:DI 1:5.5 or AZ300MIF
| 60" 45"
| align="left" |
*Concentrated 400K Dev. Etches 5214

|-
| AZnLOF2020
| 3 krpm/30”
| 110°C/90”
| ~ 2.1 um
| 4.2”
| 110°C/60”
|
| AZ300MIF
| 60”
| align="left" |
*For Undercut

|-
| AZnLOF2035
| 2.5 krpm/30”
| 110°C/60”
| ~ 3.5 um
| 5.0”
| 110°C/60”
|
| AZ300MIF
| 70”
| align="left" |
*For Undercut

|}

Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)

2013-09-26T01:37:31Z

Ray t:

{{tool|{{PAGENAME}}
|picture=SiDeep.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 2
|email=freeborn@ece.ucsb.edu
|description = SiRIE Based Flourine Etcher for Bosch MEMS Processes
|manufacturer = Plasmatherm (Unaxis)
|materials =
|toolid=28
}}
= About =

The SiRIE system is a Plasma-Therm 770 SLR series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate RF supply to independently control plasma density and ion energy in the system. This system is dedicated to deep etching in silicon for MEMs structures. The Bosch process is used for obtaining the deep, vertical, high aspect ratio structures. This process cycles between a polymer deposition cycle using C4F8 gas and no substrate bias, and an etching cycle using a SF6 / Ar mixture with substrate bias. The system is fully computer controlled in all aspects of the pumping cycles and process control, and can be programmed by the user. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck.

The materials allowed in the system are limited to Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber, such as metal layers on the surface, only if they will remain completely protected from the plasma by an allowed material during the entire etch. Some alternate stop-etch materials may be allowed upon discussion with facility staff.

He back-side cooling is used to keep the sample cool during the etch. This is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. Pieces of wafers can be mounted onto 4" silicon wafers using thin, uniform, bubble-free hard baked photoresist. The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect.

= Detailed Specifications =

*1000 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators
*C4F8, SF6, O2, Ar, N2 gases available
*He-back-side cooling
*Windows-based computer control of process and wafer handling
*Allowed materials: Silicon, SiO2, Si3N4, SiOXNY, and polymer films such as photoresist, PMMA, and polyimide; other stop-etch materials on request
*Realized etch rates (including passivation steps) of > 3 um / min. Using the standard Plasma Therm recipe, a nominal etch rate of 2 um / min. is achieved; etch rate dependent on conditions and open area

= Recipes =
==Single-step Si Etching (not Bosch Process!) (Si Deep RIE)==
*[[media:10-Si_Etch_using_DRIE_(single-step).pdf|Single-step Si Vertical Etch Recipe]]

Tube Furnace (Tystar 8300)

2013-09-26T00:48:57Z

Ray t:

{{tool|{{PAGENAME}}
|picture=Tystar.jpg
|type = Thermal Processing
|super= Tony Bosch
|phone=(805)839-3918x217
|location=Bay 4
|email=bosch@ece.ucsb.edu
|description = Tystar 8" 3-Tube Oxidation/Annealing System
|manufacturer = Tystar Corporation
|materials =
|toolid=999
}}
= About =
The three stack Tystar 8” furnace is used primarily for 3 processes. The processes are dedicated for one tube each:
# SOG curing - Tube 1
# Dry or wet oxidation of silicon - Tubes 2 and 3
# General furnace annealing - Tube 3

The tubes can hold up to one hundred 8” wafers per tube per cycle. We have boats for various wafer sizes, including pieces. The maximum temperature is 1050°C for the system. Gases used are O2, Steam from DI-H2O, N2.

=Process Information=

=Recipes=

=Useful Information=
[[Media:TystarMechDrawWaferBoat.pdf|Tystar Wafer Boat Drawing - 4" Wafer with 0.5mm Slots]]

=See Also=
*[http://www.tystar.com/ Tystar] - Manufacturer of the tool
*[http://www.cleanroom.byu.edu/OxideTimeCalc.phtml Silicon Thermal Oxide Thickness Calculator] - Use this on-line calculator to calculate times for silicon oxidation.

Tube Furnace (Tystar 8300)

2013-09-26T00:47:53Z

Ray t: /* See Also */

{{tool|{{PAGENAME}}
|picture=Tystar.jpg
|type = Thermal Processing
|super= Tony Bosch
|phone=(805)839-3918x217
|location=Bay 4
|email=bosch@ece.ucsb.edu
|description = Tystar 8" 3-Tube Oxidation/Annealing System
|manufacturer = Tystar Corporation
|materials =
|toolid=999
}}
= About =
The three stack Tystar 8” furnace is used primarily for 3 processes. The processes are dedicated for one tube each:
# SOG curing - Tube 1
# Dry or wet oxidation of silicon - Tubes 2 and 3
# General furnace annealing - Tube 3

The tubes can hold up to one hundred 8” wafers per tube per cycle. We have boats for various wafer sizes, including pieces. The maximum temperature is 1050°C for the system. Gases used are O2, Steam from DI-H2O, N2.

=Useful Information=
[[Media:TystarMechDrawWaferBoat.pdf|Tystar Wafer Boat Drawing - 4" Wafer with 0.5mm Slots]]

=See Also=
*[http://www.tystar.com/ Tystar] - Manufacturer of the tool
*[http://www.cleanroom.byu.edu/OxideTimeCalc.phtml Silicon Thermal Oxide Thickness Calculator] - Use this on-line calculator to calculate times for silicon oxidation.

File:TystarMechDrawWaferBoat.pdf

2013-09-26T00:02:53Z

Ray t: Mechanical Drawing for 4" Wafer Boat for Tystar Furnace (From Tystar)

Mechanical Drawing for 4" Wafer Boat for Tystar Furnace (From Tystar)