UCSB Nanofab Wiki - User contributions [en]

ICP Etch 2 (Panasonic E626I)

2026-03-31T16:19:10Z

Sawyer l: Removed ashing chamber reference

{{tool2|{{PAGENAME}}
|picture=ICP1.jpg
|type = Dry Etch
|super= Lee Sawyer
|super2= Tony Bosch
|phone=(805)839-2123
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = ICP Etch
|manufacturer = Panasonic Factory Solutions
|model= E626I
|materials =
|toolid=23
}}
==About==

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.

==Detailed Specifications==

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*Room Temp. to 80°C sample temperature for etching. Default 15°C Chuck temperature.
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
*Single 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer
*670nm laser endpoint detector with camera and simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

==Documentation==

*[https://wiki.nanofab.ucsb.edu/w/images/f/f3/ICP-_2_SOP_Rev_A.pdf ICP #2 Operating Instructions]
*{{file|Panasonic2.pdf|Training Notes}}
*[https://wiki.nanofab.ucsb.edu/w/images/2/2b/ICP_-2_Gas_Change_SOP_Rev_B.pdf ICP #2 Gas Change Procedure]
*[https://wiki.nanofab.ucsb.edu/w/images/2/2e/Manual_Wafer_Transfer.pdf ICP #2 Manual Wafer Transfer Instructions]
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]

===Online Training Video===

*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=8b676980-1c9a-420c-a2e5-ac180139939d Panasonic ICP#2 Training Video]
*'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

==Recipes==

*'''Recipes > Dry Etch >''' [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 '''ICP2 Etching Recipes''']
**Starting point recipes for ICP2 specifically.

*'''Recipes > [https://wiki.nanotech.ucsb.edu/w/index.php?title=Dry_Etching_Recipes Dry Etching Recipes]'''
**Table of all dry etching recipes, showing '''etched materials vs. tool''' etc.
**

== [[Process Group - Process Control Data#Panasonic ICP#2 - Process Control|Process Control Data]] ==

* Data showing "calibration" etches over time to test tool performance.

:[[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]

E-Beam 2 (Custom)

2026-02-12T17:44:50Z

Sawyer l: Updated SOP Rev

{{tool2|{{PAGENAME}}
|picture=IMG 5388.jpg
|type = Vacuum Deposition
|super= Lee Sawyer
|super2= Mike Barreraz
|phone=(805)839-2123
|location=Bay 3
|email=lee_sawyer@ucsb.edu
|description = Electron-Beam Evaporation System
|manufacturer = Temescal
|materials =
|toolid=8
}}
==About==
This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO2, ITO, TiO2, Ta2O5, and SrF2. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.

==Detailed Specifications==

*Temescal CV-6SXL 10 kV power supply
*Temescal 4-pocket Series 260 E-Beam turret source
*Temescal TemEbeam Controller (EBC); controls the high voltage power supply, electron beam position (up to 8 sweep patterns per pocket), and source pocket position
*Inficon IC/5 Thin Film Deposition Controller
*Cryo-pumped system with low E-7 ultimate base pressure
*Automatic vacuum sequencing via CHA Auto-Tech II
*Crystal thickness monitoring
*Sample size: up to 5” diameter non-heated, 4" diameter heated
*'''Heated''' sample holder (programmable), sample temps up to 370°C
*'''Oxygen''' gas MFC for maintaining oxide stoichiometry

==Documentation==

*[https://wiki.nanofab.ucsb.edu/w/images/8/81/EB2_SOP_Rev_J.pdf E-Beam #2 Standard Operating Procedure]

==Recipes==

*[[E-Beam Evaporation Recipes#E-Beam%202%20.28Custom.29|Recipes > Vac. Deposition > '''E-Beam 2 (Custom)''']]
**Lists the characterized recipes for this machine - other materials may also be used with staff permission.

File:EB2 SOP Rev J.pdf

2026-02-12T17:44:13Z

Sawyer l:

Sputtering Recipes

2026-01-05T19:59:57Z

Sawyer l: /* Materials Table (Sputter 5) */ Updated Al max power setting

{{recipes|Vacuum Deposition}}
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}

==[[Sputter 3 (AJA ATC 2000-F)]]==

Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.

===Tips & Tricks===

====Ignition Issues====
It is somewhat common that you might have a plasma ignition failure at some point. Common remedies for this are to increase the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition step pressure to 10mTorr or 30mT, then during deposition decrease the pressure to 3mTorr and the plasma will stay lit.

===Materials Table (Sputter 3)===
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
{| class="wikitable sortable"
|-
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm
!Target Consumed Lower Limit!!Data Below!!Comment
|-
|Au
| -
| -
| -
| -
| -
| -
| -
| -
| -
| -
| -
| -
| -
|Set: 200 W
Read: 400 VDC
|no
|
|-
|Al2O3
|3
|200 (RF2)
|off
|20
|30
|
|1.5
|1.52"-4mm
|5.32
|
|
|1.6478
|0
|
|no
|Demis D. John
|-
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-
| ||yes||Alex K
|-
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-
| ||no||Brian
|-
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-
| ||no||Ning
|-
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-
| ||yes||Ning
|-
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-
| ||No||Alex K
|-
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-
| ||yes||Ning
|-
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-
| ||yes||Ning
|-
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-
| ||yes||Ning
|-
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-
| ||yes||Ning
|-
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-
| ||yes||Ning
|-
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-
| ||no||Ning
|-
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-
| ||no||Ning
|-
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer
|-
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-
| ||yes||Brian
|-
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-
| ||yes||Brian
|-
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-
| ||yes||Brian
|-
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-
| ||yes||Brian
|-
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-
| ||yes||Brian
|-
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-
| ||yes||Ning
|-
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-
| ||yes||Ning
|-
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-
| ||yes||Ning
|-
|TiW(4wt%Ti)
|4.5
|DC-300W(10%TiW)/
DC-50W(W)
|0
|20
|25
|0
|0
|(H1.52-T4)
|16
| -60 to 140
|~55
| -
| -
|
|yes
|Foong
|-
|W
|4.5
|300
|0
|20
|25
|0
|0
|(H1.52-T4)
|16
| -650 to +50
|~20
| -
| -
|
|yes
|Foong
|-
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-
| ||yes||150Volts 5 min
|-
|
|}

===Height Conversion for Older Recipes===
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:
{| class="wikitable"
!Old (mm)
!New (inches)
!Typical Gun Tilt (mm)
|-
|15
|
|
|-
|25
|0.82
|9
|-
|44
|1.52
|4
|}
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]

===Fe and Co Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]

===Cu Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]

===Mo Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]

===Ni and Ta Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]

===SiO2 Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]

===SiN Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]

===Ti Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]

=== TiW Co-Sputter Deposition (Sputter 3) ===

*[https://wiki.nanofab.ucsb.edu/w/images/7/77/TiW_Film_by_DC_Co-Sputtering_in_Sputter3.pdf TiW(4wt%Ti) Co-Sputter Deposition]

=== W Deposition (Sputter 3) ===

*[https://wiki.nanofab.ucsb.edu/w/images/4/4a/W_Film_by_DC_Sputtering_sputter3.pdf W Film by DC Sputtering]

==Sputter 4 (AJA ATC 2200-V)==

Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.

===Materials Table (Sputter 4)===
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
{| class="wikitable sortable"
|-
!Material!!P(mT)
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment
|-
|Al||5
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao
|-
|Al2O3
|3
|RF4-Sw1
|200
|0
|20
|30
|0
|1.5
|H2.75-T5
|5.1
|
|
|1.64202
|0
|partial
|Demis D. John
|-
|Au||5
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao
|-
|Au||10
| ||200||0||20||45||0||0||H2.75-T5||35.5||-||-||-||-||Yes||Demis: 200W rate (Max for Au) 2022-08-03
|-
|Cu
|5
|
|150
|0
|20
|30
|0
|0
|H0.82-T9
|6.7
|
|
|
|
|No (SEM available)
|Ning Cao
|-
|Nb||4
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||
|-
|Pt||5
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao
|-
|Pt||3
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao
|-
|Ru
|3
|
|200
|
|
|45
|
|
|H2.75-T4
|~10
|
|
|
|
|Yes
|Ning Cao
|-
|Ti||10
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao
|-
|TiN||3
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||
|-
|TiO2||3
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao
|-
|TiW||4.5
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao
|-
|TiW||4.5
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt
|-
|W||3
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher
|-

|}

===Au Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]

===Al Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]

===Al2O3 Deposition (Sputter 4)===

*Rate: 5.134 nm/min
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
**A = 1.626
**B = 5.980E-3
**C = 1.622E-4

===Pt Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]

===Ru Deposition (Sputter 4)===

*[https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao
**Deposition Rate ~10nm/min
**See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.

===Ti-Au Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]

===TiO2 Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO2 Film's Refractive Index Spectrum, Resistivity, AFM Roughness]

===TiW Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]

===W-TiW Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]

==[[Sputter 5 (AJA ATC 2200-V)]]==

Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.

===Materials Table (Sputter 5)===
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
{| class="wikitable sortable"
|-
!Material!!P(mT)
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment
|-
|Al
|5
|DC/RF
|200/300
|0
|20
|45
|0
|0
|H1-T10
|?
|?
|
|
|
|
|
|No (SEM available)
|Max Power Listed
|-
|Al2O3
|1.5
|DC5-SW1
|150
| -
| -
|45
| -
|5
|H2.75-T5
|5.3
|?
|?
|?
|1.641
| -
|?
|No
|Demis 2018-04-13
|-
|Cr
|5.0
|RF
|200
|~345
|20
|45
|
|
|H2.75-T5
|4.47
|
|
|
|
|
|
|No
|BT 2024-07-02
|-
|Pt
|3.0
|
|200(507v)
| -
| -
|45
| -
| -
|H1-T10
|7.03
|?
|?
|?
|2.068
|4.951
|?
|No
|Ning 2021-09-27
|-
|SiO2||3
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana
|-
|SiO2||3
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana
|-
|SiO2||3
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana
|-
|Ti
|3.0
|
|200(374v)
| -
| -
|45
| -
| -
|H1-T10
|2.52
|?
|?
|?
|2.679
|1.853
|?
|No
|Ning 2021-09-27
|}
''*LPD: light particle detection:''

*''LPDb: light particle detection before deposition''
*''LPDa: light particle detection after deposition''

===SiO2 Deposition (Sputter 5)===

*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]

=[[Ion Beam Deposition (Veeco NEXUS)]]=
''Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.''

*[[IBD: Calibrating Optical Thickness|Method to calibrate multi-layer optical films]]: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc.

===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Process Control Plots] - ''Plots of all process control data.''===

==SiO2 deposition (IBD)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO2<nowiki> [IBD] Standard Recipe</nowiki>] - "''1_SiO2_dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO2<nowiki> [IBD] Process Control Data</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28IBD.29 SiO2<nowiki> [IBD] Historical Data</nowiki>] - Before Oct. 2021

====SiO2 Thin-Film Properties (IBD)====

*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
*HF Etch Rate ~350 nm/min
*Stress ≈ -390MPa (compressive)
*Refractive Index: ≈ 1.494
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = 1.480
**B = 0.00498
**C = -3.2606e-5

====SiO2 Uniformity====
''Measured in June 2010 (Demis D. John)''
{| class="wikitable"
|+Uniformity Statistics
!
!Thickness (nm)
!Refractive Index
(at 632nm)
|-
|Mean (Avg.), nm
|1677.80
|1.480
|-
|Min
|1671.09
|1.479
|-
|Max
|1688.9
|1.482
|-
|Std. Deviation (nm)
|5.99
|8.6e-4
|}
[[File:IBD - Deposition Uniformity across a 6-inch wafer 2010-06-15 v2.png|alt=Plot of SiO2 thickness and refractive index|none|thumb|Plot of SiO2 thickness and refractive index measured across 6-inch wafer, measured with ellipsometry. ''Credit: Demis D. John, 2010-06-15'']]
 
==Si3N4 deposition (IBD)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si3N4<nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Si3N4_Dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si3N4<nowiki> [IBD] Process Control Data</nowiki>]

===Si3N4 Thin-Film Properties (IBD)===

*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
*HF Etch Rate: ~11nm/min
*Stress ≈ -1590MPa (compressive)
*Refractive Index: ≈ 1.969
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = 2.000
**B = 0.01974
**C = 1.2478e-4

==Ta2O5 deposition (IBD)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta2O5<nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Ta2O5_dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta2O5<nowiki> [IBD] Process Control Data</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Ta2O5_deposition_.28IBD.29 Ta2O5<nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021

====Ta2O5 Thin-Film Properies (IBD)====

*Ta2O5 1hr depositions:
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
*HF Etch Rate ≈ 2 nm/min
*Stress ≈ -232MPa (compressive)
*Refractive Index: ≈ 2.172
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = 2.1123
**B = 0.018901
**C = -0.016222

==Al2O3 deposition (IBD)==

*Al2O3 [IBD] Standard Recipe - "''1_Al2O3_dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al2O3<nowiki> [IBD] Process Control Data</nowiki>]

===Al2O3 Thin-Film Properties (IBD)===

*Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
*HF etch rate ≈ 167nm/min
*Stress ≈ -332MPa (compressive)
*Refractive Index: ≈ 1.656
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = ''To Be Added''
**B =
**C =
*Absorbing < ~350nm

==TiO2 deposition (IBD)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO2<nowiki> [IBD] Standard Recipe</nowiki>] - "''1_TiO2_dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO2<nowiki> [IBD] Process Control Data</nowiki>]

===TiO2 Thin-Film Properties (IBD)===

*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
*HF etch rate ~5.34nm/min
*Stress ≈ -445MPa (compressive)
*Refractive Index: ≈ 2.259
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = 2.435
**B = -4.9045e-4
**C = 0.01309
*Absorbing < ~350nm wavelength

==SiOxNy deposition (IBD)==
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by [[Demis D. John|Demis D. John]], 2010.
{|
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiOxNy: Refractive Index vs. O2/N2 Flow.]]
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiOxNy vs. Assist O2 flow.]]
|}

==Standard Cleaning Procedure (IBD)==
You must edit the "''#_GridClean''"("#" is your group number) steps in your Process according to the following times:

*5min GridClean for 1hr or less deposition
*10min GridClean for up to 2hrs of dep.
*Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "''1_SiO2_Dep_Multi''" for an example.

===Standard Grid-Clean Recipe===
''[[To Be Added]]''

==Reference Recipes (Disabled Tools)==

===[[Sputter 2 (SFI Endeavor)|<big>Sputter 2 (SFI Endeavor)</big>]]===
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''
'''Al Deposition (Sputter 2)'''

*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]

'''AlNx Deposition (Sputter 2)'''

*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlNx Deposition Recipe]

'''Au Deposition (Sputter 2)'''

*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]

'''TiO2 Deposition (Sputter 2)'''

*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO22 Deposition Recipe]

E-Beam Evaporation Recipes

2025-12-03T16:45:09Z

Sawyer l: /* Materials Table (E-Beam #2) */

{{recipes|Vacuum Deposition}}
=Vapor Pressure Chart and Materials Deposition Table=

*[[Media:Vapor-Pressure-Chart-2.xlsx|Vapor Pressure of Metals (Excel)]]
*[http://www.lesker.com/newweb/deposition_materials/MaterialDeposition.cfm?pgid=0#| Lesker Deposition Table]

=Aluminum Deposition=

*[[Media:Al-thickness-variation-with-rate.jpg|Al thickness change with deposition rate]]

*[[Media:Al-AFM-Variation-Deposition-Rate-Rev1.pdf|Morphology Variation with Deposition Rate - Ebeam 1]]

=[[E-Beam 1 (Sharon)]]=
==Ar-Ion Beam Source==

*[[Media:Argon-ion-beam-etching-ebeam1-procedure-data-revA.pdf|Procedure and data for ion-mill in ebeam1]]

==Materials Table (E-Beam #1)==
''There are four hearth "positions" able to be loaded at any one time, meaning only up to 4 materials can be evaporated without breaking vacuum. Now able to handle Four-4" wafers in one run.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="75" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Density'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" |'''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|7 (6, 7, 8)
|C
|10.5
|0.529
|110
|
|-
|Al
|1
|C
|2.7
|1.080
|102
|
|-
|Al2O3
|(6, 7, 8)
|C
|3.97
|0.336
|
|
|-
|Au
|3
|C
|19.3
|0.381
|92
|Bazookas can be used at 20-30Å/sec.
|-
|AuGe
|(6, 7, 8)
|C
|17.63
|0.397
|
|Composition unpredictable unless you practically empty the crucible.
|-
|C
|(6, 7, 8)
|H
|2.250
|3.260
|
|Carbon. Must sweep beam. 1Å/sec (fluctuating 0.4–0.9Å/sec) at ~1.4–1.6 emission.
|-
|Co
|(6, 7, 8)
|C
|8.9
|0.343
|
|'''Use only with permission'''
|-
|Fe
|(6, 7, 8)
|
|7.86
|0.349
|
|
|-
|Ge
|8 (6, 7, 8)
|C
|5.35
|0.516
|
|
|-
|Gd
|(6, 7, 8)
|H
|7.89
|0.670
|
|'''Use only with permission'''
|
|-
|MgO
|(6, 7, 8)
|
|3.58
|0.411
|
|'''Use only with permission'''
|-
|Mo
|(6, 7, 8)
|
|10.2
|0.257
|
|
|-
|Ni
|5
|H
|8.91
|0.331
|104
|Prone to spitting. Cool down for 15 minutes before venting.
|-
|NiCr
|(6, 7, 8)
|H
|8.50
|0.3258
|
|Density and z-ratio for Nichrome IV
|-
|Nb
|(6, 7, 8)
|C
|8.57
|0.516 ( should be 0.492)
|
|Cool down for at least 35 minutes before venting.
|-
|Pd
|6 (6, 7, 8)
|H
|12.0
|0.357
|112
|
|-
|Pt
|4
|C
|21.40
|0.245
|100
|Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|Ru
|(6, 7, 8)
|C
|12.362
|0.182
|
|Prone to spitting. Evaporate at 1.0Å/sec or less. Cool down for 20 minutes before venting.
|-
|Si
|(6, 7, 8)
|H
|2.32
|0.712
|
|Cool down very slowly after evaporating lest you crack the source.
|-
|SiO
|(6, 7, 8)
|C
|2.13
|0.87
|
|'''Use only with permission'''
|-
|SiO2
|(6, 7, 8)
|C
|2.648
|1.00
|
|'''Use only with permission.'''
Please change the crystal and the upper mirror after evaporating oxide. Density 2.2-2.7 according to thin film dep. table.
|-
|SrF2
|(6, 7, 8)
|C
|4.28
|0.727
|
|'''Use only with permission'''
|-
|Ta
|(6, 7, 8)
|H
|16.6
|0.262
|
|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.
|-
|W
|(6, 7, 8)
|C
|19.3
|0.163
|
|
|-
|Ti
|2
|H
|4.50
|0.628
|109
|
|}

=[[E-Beam 2 (Custom)]]=
==Materials Table (E-Beam #2)==
[[File:EB2 Materials Table.png|none|thumb|738x738px]]

==ITO deposition (E-Beam 2)==

*[[Media:Rapid Thermal Annealing on Room-temperature grown ITO.pdf|Room-temperature ITO Deposition, Annealing, and Electrical and Optical Properties]]
*[[Media:ITO film-200C-O2-35sccm-EBeam2.pdf|ITO Deposition at 200 C]]

==CeO2 deposition (E-Beam 2)==

*[[Media:CeO2 Deposition-EBeam2.pdf|Room- and High-temperature CeO2 Depositions with and without an Additional Oxygen Gas Flow]]

=[[E-Beam 3 (Temescal)]]=
==Materials Table (E-Beam #3)==
''The following materials are always installed in the evaporator. There are 4 materials available on each gun (front/rear guns), allowing for co-deposition by running both guns simultaneously.''
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Tooling, %'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Au
|Front
|C
|2.0
|3
|19.30
|0.381
|56
|
|-
|Ni
|Front
|C
|0.5
|2
|8.91
|0.331
|67
|
|-
|Pt
|Front
|C
|0.4
|1
|21.40
|0.245
|67
|
|-
|Ti
|Front
|C
|5.0
|4
|4.50
|0.628
|67
|
|-
|Ag
|Rear
|C
|10.0
|2
|10.50
|0.529
|67
|
|-
|Al
|Rear
|C
|10.0
|1
|2.70
|1.080
|53
|
|-
|Ge
|Rear
|C
|10.0
|3
|5.35
|0.516
|80
|
|-
|Pd
|Rear
|C
|0.9
|4
|12.038
|0.357
|48
|
|-
|}

=[[E-Beam 4 (CHA)]]=
==Materials Table (E-Beam #4)==
{| class="wikitable sortable collapsible" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" |'''Material'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Master tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" |'''Process Gain, A/sec/%pwr'''
! width="100" bgcolor="#D0E7FF" align="center" |'''Comments'''
|-
|Ag
|10.50
|0.529
|110
|10.0
|
|-
|Al
|2.70
|1.080
|110
|6.0
|updated 9/1/2021
|-
|Au
|19.30
|0.381
|120
|10.0
|
|-
|Co
|8.90
|0.343
|150
|5.0
|
|-
|Cr
|7.20
|0.305
|140
|10.0
|
|-
|Fe
|7.86
|0.349
|165
|10.0
|
|-
|Ge
|5.35
|0.516
|126
|10.0
|
|-
|Hf
|13.09
|0.360
|150
|10.0
|
|-
|Ir
|22.40
|0.129
|130
|10.0
|
|-
|Ni
|8.91
|0.331
|150
|5.0
|
|-
|NiCr
|8.50
|0.3258
|140
|10.0
|density and z ratio for Nichrome IV
|-
|NiFe
|8.70
|1.000
|100
|10.0
|
|-
|Pd
|12.038
|0.357
|112
|10.0
|
|-
|Pt
|21.40
|0.245
|130
|10.0
|
|-
|Ru
|12.362
|0.182
|100
|10.0
|
|-
|Ti
|4.50
|0.628
|183
|10.0
|
|-
|Zr
|6.49
|0.600
|150
|10.0
|
|-
|}

File:EB2 Materials Table.png

2025-12-03T16:44:28Z

2025-06-05T15:24:39Z

Sawyer l: Mohs hardnesss added

==[[Dicing Saw (ADT)|Dicing Saw Recipes (ADT 7100)]]==

===Dicing Alignment Instructions===
The Process Group often has users fill out these instructions below to fully define a dicing job. This will ensure you have thought about the entire dicing process.

Note that you should design your chips with ≥250µm dicing street width, to avoid the blade cutting into your devices.

It is very helpful to also place alignment guides in the dicing streets, such as crosses at the intersections of dicing streets, such as this:

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

<code> | | |</code>

<code>---- + ---- + ---- + ---</code>

*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/Example_Dicing_Instructions_for_UC_Santa_Barbara_v1.pptx '''Example Dicing Instructions for UC Santa Barbara v1.pptx''']

===Recommended Dicing Parameters===
This table is for our stocked [https://www.dicing.com Thermocarbon] Resnoid blades.

-2C blades are 2mils/50µm wide, -4C blades are 4mils/100µm wide, and -8C blades are 8mils/200µm wide. Plan for ~10–30µm extra edge clearance to account for kerf, chipping, etc.

Narrower (~30-50µm) Nickel Hubbed blades are often used for even narrower dicing streets, these must be purchased by the user. KnS G1440-Q5H0 work very well, with ~30µm blade width and smaller kerf. You need to insert a shim to use these blades - please contact [[Dicing Saw (ADT)|tool supervisor]] for how to use these blades.
{| class="wikitable sortable"
|-
!Material
!Blade P/N
!Spindle Speed
(KRPM)
!Cut Speed
(mm/s)
!Mohs Hardness
Scale*
|-
|Alumina, AlN
|2.187-8C-54RU-3
|25
|0.5-2
|8
|-
|Ceramic
|2.187-4C-30RU-3
|18
|0.5-2
|7 - 9
|-
|GaAs
|2.187-4C-9RU-3
|35
|1-5
|4.5
|-
|GaN (<550um)
|2.187-4C-30RU-3
|35
|0.5-3
|9
|-
|GaN (>550um)
|2.187-8C-30RU-3
|35
|0.5-2
|9
|-
|Glass/Fused Silica
|2.187-4C-22RU-3
|25
|1-5
|5.3 - 6.5
|-
|InP
|2.187-4C-9RU-3
|35
|1-5
|9
|-
|Quartz
|2.187-4C-30RU-3
|25
|1-5
|7
|-
|Sapphire
|2.187-8C-54RU-3
|18
|0.5-2
|9
|-
|Si
|2.187-2C-9RU-3
|30
|1-2
|7
|-
|Si
|2.187-4C-9RU-3
|35
|4-10
|7
|-
|Si on Glasss
|2.187-4C-9RU-3
|25
|1-5
|7
|-
|SiC
|2.187-8C-30RU-3
|25
|0.5-2
|9.5
|-
|Ti
|2.187-8C-54RU-3
|15
|0.5-2
|6
|}
<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

====Anatomy of a Blade====
Example: '''2.187-4C-9RU-3'''

"2.187": This is the blade Outer Diameter ("OD") in inches (55.55 mm).

"4C": Blade thickness in mils. 4 mil = 100 µm

"9": Diamond particle size in microns. Stocked resin blades have embedded diamond particles. Smaller particles create a smoother kerf, but remove less material and are thus less robust or require slower cutting speeds.

"RU-3". A blade parameter that deals with cut quality vs. robustness (lifetime) of the blade.

===Calculated Blade Exposures===
{| class="wikitable"
!Blade Diam
!Flange Diam.
!Blade Exposure
!
|-
|2.187" (55.55 mm)
|47 mm
|4.275 mm
|
|-
|2.187" (55.55 mm)
|49 mm
|3.275 mm
|
|-
|2.187" (55.55 mm)
|51 mm
|2.275 mm
|
|-
|2.187" (55.55 mm)
|52 mm
|1.775 mm
|
|-
|2.187" (55.55 mm)
|53 mm
|1.275 mm
|
|}

====Blade Exposure Calculation====
[[File:ADT Dicing - Blade Exposure diagram.png|alt=schematic of blade exposure|none|thumb|600x600px|Diagram of blade exposure. If '''''A''''' '''''< 0.30mm''''', then the flange may hit your wafer, damaging the tool and wafer!]]

===Mounting/Unmounting Samples===
The UV-Release Tape dispenser is most-often used for mounting sample for dicing.

The Tape Model installed is Ultron 1042R-B. [https://wiki.nanofab.ucsb.edu/w/images/a/ac/Ultron_1042R-B_Film_Specs.pdf Data Sheet Here.]

*[[ADT WM-966 - UV Tape Mounting Standard Procedure|Procedure for mounting sample on UV-Release Tape]]
*Full Release: 120 sec exposure
*Partial Release for Shipping: 9 sec exposure

====Wax-Mounting to Carrier====
If your final die size will be very small, eg. <3mm square or so, the chances increase that many die will be ejected into the cooling water stream once you begin the 2nd cut angle, because the total surface area of die contacting the adhesive tape becomes very low

A method to overcome this is to mount your sample with CrystalBond wax onto a Silicon carrier wafer. The wax is a much stronger adhesive. The drawback is that you must dissolve the wax to unmount your die, often resulting in a jumbled pile of small die in Acetone/Isopropanol, which can be difficult to handle/sort afterwards.

 
{| class="wikitable"
|+
!Procedure to mount with wax onto a carrier wafer:
|-
|
* Prepare a clean silicon carrier wafers, at least ~5mm larger than your sample to be diced.
* The Bay 5 solvent bench is most commonly used for wax mounting, although any solvent bench can be used as long as you cover the hotplate with wax and are careful to clean up any mess.
* Cover the hotplate (cool) with clean tinfoil, and then raise temp to 130-150°C.
* Place the silicon carrier on top, polished wide up, and wait a few min for it to heat up. Pressing down with tweezers can help speed this up.
* Take either a small measured/weighed piece of crystalbond wax, or the whole stick, and touch/press it against the silicon carrier. The wax sticks are stored often on the bench shelves, edge of the bench, or the outside wall of the bench (where the vacuum ports are for the Bay 4 solvent bench).
* Once a large enough puddle of melted wax is produced, remove the wax stick (use tweezers to hold the carrier wafer down), being careful to prevent the wax stringers from landing all over the workspace. You can clean it up later when the hotplate is cold.
** You want to make sure the entire underside of the sample will be contacting the wax, but don’t want so much wax that the sample will be tilted/uneven. Excess wax can easily be removed on an upcoming step.
* With tweezers, place your sample to be diced on the wax, face up.
* Optional: press down the edges/corners of the sample to make it approximately flat.
* Remove the entire tinfoil sheet, with carrier wafer, from the hotplate to let it cool down. Once cool (few mins), remove your silicon carrier with sample attached.
* Optional: To remove wax from the top surface of your sample, or from the edges, one effective way is to place the mounted assembly onto a POLOS spinner and, while spinning at ~1500-2000rpm, spray with ACE spray bottle for ~30sec, the ISO & N2 dry. This removes wax on the top without significantly attacking the wax mounting between the samples. You could also attempt to use a cotton swab with ACE, although this is typically much less clean.
* Proceed to apply your surface protection for dicing, eg. Photoresist coating or blue tape etc.
|-
|''Procedure written by Demis D John, 2022-07-04. Please consider the [https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab publication policy].''
|}
 

===Dicing Tips===
Harder materials will often require larger diamond particle sizes, and thicker blades will last longer if they are overheating and breaking often.

It is not uncommon to have to change a blade in the middle of cutting a wafer - the software is set up to allow this easily without aborting the programmed cuts. The "Height Check Rate" in the recipe will check the blade exposure after this many cuts, using the optical height sensor - this allows you to see how quickly the blade is wearing out (as blade exposure reduces).

Ensuring the cut water jet is hitting at ~7-8 o'clock on the blade and the water jet is being split in two will keep the blade coolest and help prevent breakage. Water sprays should be set to 0.9/0.9/0.9 by default.

For sapphire dicing (very hard material), it is common to use "double-pass dicing", where the substrate is cut at only half depth (eg. cutting only 150µm deep for a 300µm thick substrate) on the first pass, and then re-cut at the full depth. The blade will need to be changed often, so set your "Height Check Rate" to 1 or 2. This can be very time consuming. 200-300µm thick Sapphire substrates are much easier to cut than 650µm thick - often single-pass dicing is adequate for the thinner substrates.

===Surface Protection===

====Photoresist====
Users most often use sacrificial photoresists to protect the surface from accumulating dicing dust. The static-buildup of dielectric films causes the dust to adhere strongly. Ensure that the PR thickness will adequately coat all your exposed topography (eg. use a ≥2µm thick PR for protecting 1.5-2.0µm tall etched features).

#Choose a photoresist of appropriate thickness, and spin-coat it & soft-bake it according to a standard recipe.
##[[Contact Alignment Recipes|Contact Alignment PR Recipes]]
##[[Stepper Recipes|Stepper PR Recipes]]

#Perform your dicing
#Remove the die from the UV release tape (60sec UV Exposure)
#Strip the PR from each die in Acetone and ISO & N2 dry. We recommend to use ACE/ISO squirt bottles on each die individually to ensure the particles on the PR surface don’t land and stick to the chip surface.

====Blue Tape====
Alternatively our low-tack residue-free Blue tape can be used to protect the die surface.

Blue tape removal is easy for large die, but does require manual removal from each die, and eliminates sample exposure to solvents.

You will need to physically, gently press the blue tape onto the wafer surface, while eliminating bubbles. Do this by placing your wafer directly in front of the blue tape-roll dispenser, then attaching the tape to the table over the wafer (without touching wafer), allowing you to press the tape onto the wafer progressively from one side.

The very edges of the die may accumulate a bit more dicing dust due to the tape delaminating slightly during dicing. Plan for about 50-100µm of edge clearance on each die.

=== Cut Depth Accuracy ===
Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

==== Procedure to improve cut depth accuracy ====
To achieve an accurate depth like <30µm accuracy:

* Do Manual alignment of sample.
* You will do test cuts on the tape only (with sample mounted, but ~50mm away from sample in Y-direction (not X!)) - nominally 90µm thick but I think the plastic thickness varies between ~60-100µm as a guess. Then progressively reduce the depth to se when it hits the tape.
* Do Manual y-offset, with depth (distance between tip of blade & chuck)=0.070mm
* If you don’t see a cut, then [Cancel]
* Adjust recipe to -0.010mm depth, 0.060mm in this case
* Do Manual Y-offset again 10mm away from original cut
* Repeat until you see the blade just scraping the surface. You will see it “skips”, hitting then missing then hitting (this is the tape or chuck height variation)
** That is the depth to hit the tape.
* (To ascertain the variation, keep going down by 10µm increments until you see a “full” cut with no skips.)
* Then in your recipe, add the desired remaining amount
** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

==[[Wafer Bonder (Logitech WBS7)]]==
This tool is used for bonding samples to Silicon carrier wafers with CrystalBond wax.

*[[Logitech WBS7 - Procedure for Wax Mounting with bulk Crystalbond Stick|Wax Mounting Procedure, with bulk Crystalbond Wax]] - Recommended, works for most applications.
*[[Logitech WBS7 - Procedure for Wax Mounting with Spin-On Crystalbond|Wax Mounting Procedure, with Spin-On Crystalbond]] - if very thin/high uniformity (≤5µm) is required.

==[[Automated Wafer Cleaver (Loomis LSD-155LT)]]==
This tool is used for scribe and break of your samples.

*Recommended recipes, a starting point for most applications.
*

{| class="wikitable"

|}

Packaging Recipes

2025-05-14T19:31:19Z

2025-04-16T19:11:11Z

Sawyer l:

ICP Etch 2 (Panasonic E626I)

2025-04-16T19:10:47Z

Sawyer l: Updated Gas Change SOP

{{tool2|{{PAGENAME}}
|picture=ICP1.jpg
|type = Dry Etch
|super= Lee Sawyer
|super2= Tony Bosch
|phone=(805)839-2123
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = ICP Etch
|manufacturer = Panasonic Factory Solutions
|model= E626I
|materials =
|toolid=23
}}
==About==

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.

==Detailed Specifications==

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
*Optimal Emission Monitoring
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
*O2, N2, CF4, H2O Vapor for ashing chamber
*Single 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer
*670nm laser endpoint detector with camera and simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

==Documentation==

*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
*{{file|Panasonic2.pdf|Training Notes}}
*[https://wiki.nanofab.ucsb.edu/w/images/2/2b/ICP_-2_Gas_Change_SOP_Rev_B.pdf ICP #2 Gas Change Procedure]
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]

===Online Training Video===

*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=8b676980-1c9a-420c-a2e5-ac180139939d Panasonic ICP#2 Training Video]
*'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

==Recipes==

*'''Recipes > Dry Etch >''' [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 '''ICP2 Etching Recipes''']
**Starting point recipes for ICP2 specifically.

*'''Recipes > [https://wiki.nanotech.ucsb.edu/w/index.php?title=Dry_Etching_Recipes Dry Etching Recipes]'''
**Table of all dry etching recipes, showing '''etched materials vs. tool''' etc.
**

== [[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Process Control Data]] ==

* Data showing "calibration" etches over time to test tool performance.

:[[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]

ICP Etch 2 (Panasonic E626I)

2025-04-16T19:10:02Z

Sawyer l:

{{tool2|{{PAGENAME}}
|picture=ICP1.jpg
|type = Dry Etch
|super= Lee Sawyer
|super2= Tony Bosch
|phone=(805)839-2123
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = ICP Etch
|manufacturer = Panasonic Factory Solutions
|model= E626I
|materials =
|toolid=23
}}
==About==

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.

==Detailed Specifications==

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
*Optimal Emission Monitoring
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
*O2, N2, CF4, H2O Vapor for ashing chamber
*Single 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer
*670nm laser endpoint detector with camera and simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

==Documentation==

*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
*{{file|Panasonic2.pdf|Training Notes}}
*[https://wiki.nanofab.ucsb.edu/w/images/2/2b/ICP_-2_Gas_Change_SOP_Rev_B.pdf ICP #2 Gas Change Instructions]
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]

===Online Training Video===

*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=8b676980-1c9a-420c-a2e5-ac180139939d Panasonic ICP#2 Training Video]
*'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

==Recipes==

*'''Recipes > Dry Etch >''' [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 '''ICP2 Etching Recipes''']
**Starting point recipes for ICP2 specifically.

*'''Recipes > [https://wiki.nanotech.ucsb.edu/w/index.php?title=Dry_Etching_Recipes Dry Etching Recipes]'''
**Table of all dry etching recipes, showing '''etched materials vs. tool''' etc.
**

== [[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Process Control Data]] ==

* Data showing "calibration" etches over time to test tool performance.

:[[File:ICP2 Process Control Data Example.jpg|alt=example ICP2 process control chart|none|thumb|250x250px|[https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281 Click for Process Control Charts]|link=https://docs.google.com/spreadsheets/d/1m0l_UK2lDxlgww4f6nfXe4aQedNeDZsLs46jQ5wR4zw/edit#gid=1804752281]]

File:ICP -2 Gas Change SOP Rev B.pdf

2025-04-16T19:07:15Z

Sawyer l:

Mask Making Guidelines for Contact Aligners

2025-01-28T15:30:28Z

Sawyer l: tool specific mask and sub info added

== General Procedure ==

# Make your CAD file of your device according to the tool you're going to do litho on.
# Make separate "Layers" on your CAD file corresponding to each litho.
# Fill out the Mask Order Form for the photomask vendor you choose to order from. Can order all photomasks (one for each Layer) in one order, calling out separate CAD Layers for each Mask.
## Academic users: Contact [[Demis D. John|Demis]] for quotes from photomask vendors.
## Industrial users: Contact photomask vendors for quotes, we can suggest some or you can find them online yourself.
# UCSB Users: Submit a requisition in Procurement Gateway to send a PO to the photomask vendor.
# Send Photomask vendor your CAD file and Mask order form (referencing above PO).
# Industrial Users: You can pay by credit card if desired.
# Typically ~3 days to receive the photomasks.

==Generic Contact Mask Parameters==
For the contact aligner you are designing for, make sure you know the following specifications:

=== Mask Plate Size ===
*We have two different styles of contact aligners and each has it's own capability in regard to the substrate and mask size it can accommodate (with some overlap between the two).
**SUSS MJB-3:
***Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
***Substrate size: 3" x 3" max
***Mask plate size: 3" x 3" x 0.090" or 4" x 4" x 0.090", typically soda-lime glass.
**SUSS MA-6:
***Chuck Sizes:
****1" square (or wafer) and smaller, backside alignment capability
****3" wafer, no backside alignment
****4" wafer, backside alignment capability
****6" wafer, backside alignment capability
***Mask Holder Sizes:
****3"
****4"
****5" mask - can be modified to support a 6" mask but exposure area will still be ~4" diameter (see Staff)
****7"
*The plate size should be ~1" larger than your wafer size, AND the contact aligner should have a plate holder compatible with that plate size. Some examples:
**To expose a '''2" (50mm) wafer, or ''smaller pieces''''' you could order
***A 3 " or 4" mask plate. Eg. 3 ''x 3 x 0.090 inch soda lime'' ''glass.''
****Either put your design in the center of the plate, and order multiple plates (one for each process step/"Layer"), or
****Put multiple patterns on a single plate and use the offset-vacuum chuck, to put your sample under the right pattern on the plate. (This takes a bit more experience with the MJB to design correctly.)
**To expose a '''3" (75mm) wafer''', you could order
***A 4" or 5" mask plate. Eg. ''5 x 5 x 0.090 inch soda lime'' ''glass.''
**To expose a '''4" (100mm) wafer''', you should order
***5" mask plate. Eg. ''5 x 5 x 0.090 inch soda lime'' ''glass.''
***This works on the [[Contact Aligner (SUSS MA-6)|MA6]] only.
**To expose a '''6" (150mm) wafer''', you should order
***7" mask plate. Eg. ''7 x 7 x 0.090 inch soda lime'' ''glass.''
***This works on the [[Contact Aligner (SUSS MA-6)|MA6]] only.

*Either the quoted product number from our photomask vendor quotes, or the minimum feature size in your CAD - and just ask the photomask vendor which product number to use.

=== Other Mask Plate Specs ===
For all contact plates, we suggest the following standard params:

*Material: Soda Lime glass (quartz is generally overkill)
*Thickness 0.090" (eg. ''5" x 5" x 0.090"'' or ''4" x 4" x 0.090"'')
*Orientation/Mirroring should be "''Right Reading with Chrome Down''" if your CAD file shows exactly what you want on your wafer.
**For ''Back side alignment'', don't forget to mirror your pattern horizontally/over the Y-axis (since your wafer will be flipped).
*You can choose whether the polygons you draw are transparent glass ("objects are clear") or opaque chrome ("objects are dark"). You must consider whether you are using a positive or negative resist.

Ask the tool's Process Expert or Tool Supervisor to confirm these values. You can send your draft order form and CAD file to the tool super/process expert for review.

==Definitions for Mask/Reticle Order Form==
When submitting the photo mask order, the following notes & definitions apply:

#"'''Grade'''" or "'''Product Code'''" will be one of the items on our quote. This will specify the glass type (soda-lime or quartz), plate size (4" square and 0.090" thick, for example), and the resolution. The grade choice determines the price, and is chosen based on required feature size (smaller feature size is more expensive). This is found on the vendor's quote, or you ask the vendor for a price based on desired minimum feature size (smallest feature actually present on your CAD file).
##Although you will submit your CAD file at 1x wafer scale, the actual reticle is printer larger by the stepper's magnification (eg. 4x or 5x mag, depending on the stepper system), so make sure to choose your reticle grade accounting for this; eg. If my CAD has 1.0µm lines smallest feature, I should choose a photomask grade better/equal to 4.0µm for a stepper with 4x reduction.
#"'''Title'''" or "'''Device Name'''" or "Layer Title" - any text of your choosing, to identify this "set" of multiple mask plates ("Device Name") and each individual mask plate of the set ("Layer title").
##Eg. "Device" is "''DFB Laser 2025-01''"
##"Layer Titles" may be "''Mesa etch''", "''Contact pads''" and "''Gratings''" etc.
##The mask plates will show both, eg. one plate will show "''DFB Laser 2025-01: Mesa Etch''" and another will have ""''DFB Laser 2025-01: Gratings''", printed on the edge of the plates.
#“'''GDS Level'''” is also known as “'''layer number'''” - the GDS Layer number to print, from your CAD file
##If you are printing multiple mask plates for separate device Layers, you can submit one CAD file with each Layer on a separate GDS Layer, and specify each GDS Layer number as a separate plate (with it's own Title text, polarity, grade/CD etc.) on the Order form (on it's own line).
#"'''topcell'''" or "'''structure name'''" is the Cell in your CAD file that contains the hierarchy of patterns to print.
#Polarity/Mirroring should be "'''Right-Reading (legible text) with Chrome Down'''", if your CAD is exactly what you want on the wafer, for all our systems.
#“'''Min. Feature on Mask'''” refers to minimum clear or opaque feature, assuming features similar to lines/spaces. This should be specified at the reticle-scale - see "Grade" above.
#“'''Min. Contact'''” refers to features with aspect ratio close to 1:1, eg. Squares and circles. These have a separate spec due to the manufacturing process, so make sure to choose the appropriate grade of photomask with this in mind.
#“'''CD'''”, or "'''Critical Dimension'''" - Choose a CD similar to your most critical feature (scaled to the reticle scale), so the vendor will print & measure & guarantee test structures at that exact size.

==Generic Mask design/programming CAD files & spreadsheets==

*Example [https://wiki.nanotech.ucsb.edu/wiki/images/9/90/Digidat-Toppan_Mask_order_form_%28UCSB_ASML_5500%29.docx Toppan Order Form via Digidat]
**Academic users may request the UCSB Nanofab's quotes from various photomask vendors.
*On-wafer alignment marks: You will need matching male+female alignment marks to match each mask plate to on-wafer layers. You can use any alignment mark design you want - some examples are linked below.

===CAD Files===
''For designing your mask plates.''

*[[Calculators + Utilities#CAD%20Files%20.26%20Templates|CAD Files & Templates]] - alignment markers, alignment verniers and other useful CAD objects
:{|
|[[File:Contact-AlignMarks Vernier DemisDJohn v3 Screenshot.png.png|alt=screenshot of Contact-AlignMarks_Vernier_DemisDJohn_v3.oas|none|thumb|200x200px|Alignment Mark with Vernier]]
|[[File:Vented font screnshot.jpg|alt=Screenshot of Vented_font_DDJ.gds|none|thumb|200x200px|Vented font schematic.]]
|}
*[[Calculators + Utilities#CAD%20Layout%20Programs|CAD Layout Programs]]
*[[Calculators + Utilities#CAD%20Design%20Tips|CAD Design Tips]]

==CAD Tips==

*By default, Wafer flat is Down (–Y) with respect to your CAD file for most systems.
*Utilize the "Cell" and "Cell Instancing" functionality in your CAD layout program! (aka. a "Block" in AutoCAD). Highly recommended to use KLayout, not AutoCAD. See [[Calculators + Utilities#CAD%20Design%20Tips|Calculators + Utilities > CAD Design Tips]] for tutorials.
*Center your entire design around the coordinates (0,0). (0,0) should always be the center of your device, wafer and/or photomask/reticle Cells. Photomask vendors can then NOT "auto center" your designs on the plate.
*Inside each sub-Cell, also design around the cell's (0,0) origin.
*Create a Cell called "''reticle_layout''" or similar, that is an exact representation of what the printed reticle patterns should look like (typically at 1x wafer-scale, if ''not'' including the outer templates for the stepper system). Instance the Device's Cells into ''reticle_layout'', and reference this Cell on your mask order form. (You can also Instance the same cells into "''device_layout''" and "''wafer_layout''" cells during design/verification.).

===First Layer Alignment===

*To align your first layer, when there are no alignment marks on your wafer, it is very helpful to leave CLEAR/transparent open areas around the wafer to allow you to see the outer edges of your wafer/sample for coarse alignment to the pattern. Example below:[[File:Contact Layer 1 alignment example v1.png|alt=CAD file screenshot of example of layer 1 alignemnt to wafer|none|thumb|Example of transparent ring on mask plate for first layer alignment.]]However, make sure to consider the process implications for the fact that photoresist on this outer ring will be exposed during exposure (ie. may get developed out or hardened, depending on positive/negative photoresist).

Maskless Aligner (Heidelberg MLA150)

2025-01-13T19:18:24Z

Sawyer l: SOP rev

{{tool2|{{PAGENAME}}
|picture=MLA150_Heidelberg_Bay_6_Photo.jpg
|type = Lithography
|super = Biljana Stamenic
|super2 = Lee Sawyer
|location = Bay 6
|description = Direct-Write (Maskless) I-Line Photolithography
|manufacturer = [https://heidelberg-instruments.com Heidelberg Instruments]
|model = MLA150
|toolid=32
|materials = I-Line Photoresists
}}
==About==
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.

The system has a continuous, automatic autofocus, using optical and pneumatic detection of the substrate surface.

The software allows for custom drawings and alignment marks to be exposed onto any feature located on the microscope.

Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file. See the [[MLA150 - Troubleshooting#Greyscale Lithography Limitations|Greyscale Limitations page]] for more info.

The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.

[[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See [https://heidelberg-instruments.com/key-features/maskless-laser-lithography/ HIMT] for more info.]]

==Detailed Specifications==

*Maximum Writeable Area: 150 x 150mm
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces
**''Contact staff for pieces < 5 mm.''
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
*Exposure optics:
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]
**Laser #1: 375nm
**Laser #2: 405nm
**Lens NA = 0.95
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
*Write Grid (Address Unit):
**High Quality Mode (std.): 40nm
**Fast Mode: 100nm

*Additional manufacturer options:
**High-resolution option (Write Mode 1)
**Extended Focus Range
**Variable Focal Depth
**Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
**Greyscale Mode
**(No backside alignment)

==Documentation==

===Operating Procedures===

*[https://wiki.nanofab.ucsb.edu/w/images/7/7b/MLA150_SOP_Rev_N_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
**User manuals ''are available at the tool and on the tool's computer.''
*[https://wiki.nanofab.ucsb.edu/w/images/9/95/MLA150_Quick_Start_Rev_B.pdf MLA150 Quick Start Guide **Experienced Users Only**]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, reflecting allowed sample sizes for each focus mode.
*[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)
*[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Calibrating your Process with a Focus-Exposure Matrix (FEM)]]

===[[MLA150 - Troubleshooting|Troubleshooting & Known Bugs]]===

*''See the above page for troubleshooting/recovery info and workarounds to known bugs.''
*Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact [[Demis D. John|staff]] if you need help with this.

===Video Trainings===
To get authorized on this tool:

#please study the training videos below,
#"shadow" experienced users in your group, if you have any, and
#when you are ready, contact '''[[Biljana Stamenic|the supervisor]]''' for a hands-on check-off.

'''Important:''' You must be authorized by a supervisor to use the tool! The video training is only one part of the training. Contact [[Biljana Stamenic|'''the Supervisor''']] for training procedures.

*'''[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video]'''
**''Bookmarks in the video can point you to specific solutions/procedures.''
*'''UPDATES to the Video Training''': ''please review the addendums below:''
**New software has been installed, the '''[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf SOP]''' shows the newer menu options.
**CRITICAL: There are now TWO locations on which you must choose "Optical Autofocus". Failure to do so can result in system damage.
**[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, which are currently not reflected in the video.
**Numerous solved issues have been added to the [[MLA150 - Troubleshooting|'''Troubleshooting page''']].

==Design Tools/Info==

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Template Guidelines] ''- Choosing the right settings for your substrate size - CRITICAL!''

==Recipes==

*'''Recipes > Lithography >''' '''[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29|Maskless Aligner MLA150]]'''
**''Starting recipes for various I-Line photoresists''

=== Calibrate your own Litho process ===
* Use '''Series''' mode exposure for doing and FEM on the MLA150.
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM for repeatable processes

Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes|Photolithography Recipes]] page.

File:MLA150 SOP Rev N (LS).pdf

2025-01-13T19:17:42Z

Sawyer l:

Maskless Aligner (Heidelberg MLA150)

2024-11-15T17:39:26Z

Sawyer l: Updated quick start

{{tool2|{{PAGENAME}}
|picture=MLA150_Heidelberg_Bay_6_Photo.jpg
|type = Lithography
|super = Biljana Stamenic
|super2 = Lee Sawyer
|location = Bay 6
|description = Direct-Write (Maskless) I-Line Photolithography
|manufacturer = [https://heidelberg-instruments.com Heidelberg Instruments]
|model = MLA150
|toolid=32
|materials = I-Line Photoresists
}}
==About==
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.

The system has a continuous, automatic autofocus, using optical and pneumatic detection of the substrate surface.

The software allows for custom drawings and alignment marks to be exposed onto any feature located on the microscope.

Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file. See the [[MLA150 - Troubleshooting#Greyscale Lithography Limitations|Greyscale Limitations page]] for more info.

The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.

[[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See [https://heidelberg-instruments.com/key-features/maskless-laser-lithography/ HIMT] for more info.]]

==Detailed Specifications==

*Maximum Writeable Area: 150 x 150mm
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces
**''Contact staff for pieces < 5 mm.''
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
*Exposure optics:
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]
**Laser #1: 375nm
**Laser #2: 405nm
**Lens NA = 0.95
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
*Write Grid (Address Unit):
**High Quality Mode (std.): 40nm
**Fast Mode: 100nm

*Additional manufacturer options:
**High-resolution option (Write Mode 1)
**Extended Focus Range
**Variable Focal Depth
**Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
**Greyscale Mode
**(No backside alignment)

==Documentation==

===Operating Procedures===

*[https://wiki.nanofab.ucsb.edu/w/images/8/8e/MLA150_SOP_Rev_M_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
**User manuals ''are available at the tool and on the tool's computer.''
*[https://wiki.nanofab.ucsb.edu/w/images/9/95/MLA150_Quick_Start_Rev_B.pdf MLA150 Quick Start Guide **Experienced Users Only**]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, reflecting allowed sample sizes for each focus mode.
*[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)
*[[MLA150 - Focus-Exposure Matrix ("Series" mode)|Calibrating your Process with a Focus-Exposure Matrix (FEM)]]

===[[MLA150 - Troubleshooting|Troubleshooting & Known Bugs]]===

*''See the above page for troubleshooting/recovery info and workarounds to known bugs.''
*Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact [[Demis D. John|staff]] if you need help with this.

===Video Trainings===
To get authorized on this tool:

#please study the training videos below,
#"shadow" experienced users in your group, if you have any, and
#when you are ready, contact '''[[Biljana Stamenic|the supervisor]]''' for a hands-on check-off.

'''Important:''' You must be authorized by a supervisor to use the tool! The video training is only one part of the training. Contact [[Biljana Stamenic|'''the Supervisor''']] for training procedures.

*'''[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video]'''
**''Bookmarks in the video can point you to specific solutions/procedures.''
*'''UPDATES to the Video Training''': ''please review the addendums below:''
**New software has been installed, the '''[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf SOP]''' shows the newer menu options.
**CRITICAL: There are now TWO locations on which you must choose "Optical Autofocus". Failure to do so can result in system damage.
**[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, which are currently not reflected in the video.
**Numerous solved issues have been added to the [[MLA150 - Troubleshooting|'''Troubleshooting page''']].

==Design Tools/Info==

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Template Guidelines] ''- Choosing the right settings for your substrate size - CRITICAL!''

==Recipes==

*'''Recipes > Lithography >''' '''[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29|Maskless Aligner MLA150]]'''
**''Starting recipes for various I-Line photoresists''

=== Calibrate your own Litho process ===
* Use '''Series''' mode exposure for doing and FEM on the MLA150.
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM for repeatable processes

Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes|Photolithography Recipes]] page.

File:MLA150 Quick Start Rev B.pdf

2024-11-15T17:38:53Z

Sawyer l:

Maskless Aligner (Heidelberg MLA150)

2024-11-15T17:38:36Z

Sawyer l: Updated SOP

{{tool2|{{PAGENAME}}
|picture=MLA150_Heidelberg_Bay_6_Photo.jpg
|type = Lithography
|super = Biljana Stamenic
|super2 = Lee Sawyer
|location = Bay 6
|description = Direct-Write (Maskless) I-Line Photolithography
|manufacturer = [https://heidelberg-instruments.com Heidelberg Instruments]
|model = MLA150
|toolid=32
|materials = I-Line Photoresists
}}
==About==
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.

The system has a continuous, automatic autofocus, using optical and pneumatic detection of the substrate surface.

The software allows for custom drawings and alignment marks to be exposed onto any feature located on the microscope.

Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file. See the [[MLA150 - Troubleshooting#Greyscale Lithography Limitations|Greyscale Limitations page]] for more info.

The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.

[[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See [https://heidelberg-instruments.com/key-features/maskless-laser-lithography/ HIMT] for more info.]]

==Detailed Specifications==

*Maximum Writeable Area: 150 x 150mm
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces
**''Contact staff for pieces < 5 mm.''
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
*Exposure optics:
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]
**Laser #1: 375nm
**Laser #2: 405nm
**Lens NA = 0.95
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
*Write Grid (Address Unit):
**High Quality Mode (std.): 40nm
**Fast Mode: 100nm

*Additional manufacturer options:
**High-resolution option (Write Mode 1)
**Extended Focus Range
**Variable Focal Depth
**Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
**Greyscale Mode
**(No backside alignment)

==Documentation==

===Operating Procedures===

*[https://wiki.nanofab.ucsb.edu/w/images/8/8e/MLA150_SOP_Rev_M_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
**User manuals ''are available at the tool and on the tool's computer.''
*[https://wiki.nanofab.ucsb.edu/w/images/6/68/MLA150_Quick_Start_Rev_A.pdf MLA150 Quick Start Guide **Experienced Users Only**]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, reflecting allowed sample sizes for each focus mode.
*[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)
*[[MLA150 - Focus-Exposure Matrix ("Series" mode)|Calibrating your Process with a Focus-Exposure Matrix (FEM)]]

===[[MLA150 - Troubleshooting|Troubleshooting & Known Bugs]]===

*''See the above page for troubleshooting/recovery info and workarounds to known bugs.''
*Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact [[Demis D. John|staff]] if you need help with this.

===Video Trainings===
To get authorized on this tool:

#please study the training videos below,
#"shadow" experienced users in your group, if you have any, and
#when you are ready, contact '''[[Biljana Stamenic|the supervisor]]''' for a hands-on check-off.

'''Important:''' You must be authorized by a supervisor to use the tool! The video training is only one part of the training. Contact [[Biljana Stamenic|'''the Supervisor''']] for training procedures.

*'''[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video]'''
**''Bookmarks in the video can point you to specific solutions/procedures.''
*'''UPDATES to the Video Training''': ''please review the addendums below:''
**New software has been installed, the '''[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf SOP]''' shows the newer menu options.
**CRITICAL: There are now TWO locations on which you must choose "Optical Autofocus". Failure to do so can result in system damage.
**[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, which are currently not reflected in the video.
**Numerous solved issues have been added to the [[MLA150 - Troubleshooting|'''Troubleshooting page''']].

==Design Tools/Info==

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Template Guidelines] ''- Choosing the right settings for your substrate size - CRITICAL!''

==Recipes==

*'''Recipes > Lithography >''' '''[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29|Maskless Aligner MLA150]]'''
**''Starting recipes for various I-Line photoresists''

=== Calibrate your own Litho process ===
* Use '''Series''' mode exposure for doing and FEM on the MLA150.
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM for repeatable processes

Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes|Photolithography Recipes]] page.

2024-09-24T17:54:34Z

Sawyer l:

Suss Aligners (SUSS MJB-3)

2024-07-30T15:10:22Z

Sawyer l:

{{tool2|{{PAGENAME}}
|picture=SussAligner.jpg
|type = Lithography
|super= Lee Sawyer
|super2= Bill Millerski
|phone=(805) 893-2123
|location=Bay 6
|email=lee_sawyer@ucsb.edu
|description = Mask Aligner - MJB 3 UV400
|manufacturer = Karl Suss America
|materials =
}}
==About==
We have two high-performance mask aligners for contact exposure processes. They are manual mechanical systems alignment, contact/proximity, with exposure shuttered by a timer. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "Std." and "IR" units).

Our units are configured for the near-UV window (365 and 405 nm). All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron.

Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.

====Backside Alignment====
On the Standard MJB-3, special black chucks may be used for optically transparent materials, allowing you to view through the wafer.

For backside alignment through opaque materials such as Si or GaAs, our IR aligner has backside infrared illumination (halogen bulb) through these black chucks. A Hammamatsu IR camera is installed to view the infrared image.

Using a filter, the IR system can be configured for I-line (350 nm) only, assisting in resolution.

==Detailed Specifications==

*Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
*Substrate size: 3" x 3" max.
*Wafer / substrate thickness: 0-4.5 mm
*Exposure optics:
**Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp
**IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
*Additional manufacturer options (none installed on our systems):
**DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
**DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
**193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
*Uniformity:
**±3% over 2" diameter
**±5% over 3" diameter

===IR Aligner===

*Backside illumination with halogen bulb & transparent chuck
*Infrared camera and computer for imaging.
*Through-wafer alignment and/or inspection.

[[File:IR Alignment check 01 - crop.png|alt=Screenshto of IR camera showing front-to-back alignment|none|thumb|MJB-IR front-to-back alignment check through Silicon substrate, with few-micron etched features on the front, aligned to few-mm photoresist pattern on the backside.]]
 
===Exposure Optical Spectrum with No Filter===
[[image:DUV-Spectra-No-Filter.png|thumb|none|Aligner with No Filter]]
===Exposure Optical Spectrum with Filter for i-line Exposure===
[[image:DUV-Spectra-With-Filter.png|thumb|none|302x302px|Aligner with Filter for i-line Exposure]]
==Documentation==

*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB-3 Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/w/images/7/70/MJB_3_IR_Camera_SOP_Rev_B.pdf MJB-3 IR Camera Operation]
*[https://wiki.nanotech.ucsb.edu/w/images/1/11/MJB_3_IR_Alignment_Mode_Conversion.pdf MJB-3 IR Alignment Mode Conversion]
*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.

===CAD Files===

*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds|MA6-FrontBack_AlignMarks_only.gds]]

==Recipes==

*Recipes > Lithography > Photolithography Recipes > [[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|'''SUSS MJB-3''']]
**''Starting recipes for various I-Line photoresists, positive and negative.''

Contact Aligner (SUSS MA-6)

2024-07-30T15:10:00Z

Sawyer l:

{{tool2|{{PAGENAME}}
|picture=ContactAligner.jpg
|type = Lithography
|super= Lee Sawyer
|super2= Bill Millerski
|phone=(805) 893-2123
|location=Bay 7
|email=lee_sawyer@ucsb.edu
|description = Mask Aligner/Bond Aligner (MA/BA-6)
|manufacturer = Karl Suss America
|materials =
|toolid=33
}}
==About==
This system is a dual-use mask aligner and wafer-bond aligner, used for contact and proximity exposure processes. System is motorized for contact/proximity, microscope objective movement and exposure, with a computer used to display the microscope image for regular and backside alignment overlay. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades.

Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the [[Suss Aligners (SUSS MJB-3)|MJB-3 aligners]].

The system is fitted with visible, motorize, bottom-side optics for back-side alignment capability. Backside alignment is performed with an automated image capture system, at 5x, 10x, or 20x magnification. The backside alignment system takes images of the photomask from the ''underside'', then overlays that image digitally with the wafer face-down, again aligning with the cameras on the underside.

Bonding alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the [[Wafer Bonder (SUSS SB6-8E)|Karl-Suss SB6 system]] - contact the supervisor beforehand so the bond alignment fixturing can be installed.

==Detailed Specifications==

*350 W Hg arc lamp, broadband exposure with Suss UV400 Optics (350 - 450 nm)
*Resolution (per Manufacturer*):
**''<nowiki>*</nowiki> Resolution achieved on 150 mm Si-wafer with 1.2 µm thick AZ 4110''
**Vacuum Contact: <0.8 µm
**Hard Contact: <1.5 µm
**Soft Contact: <2.5 µm
**Proximity (@ 20 µm): <3.0µm

*Topside alignment accuracy: down to 0.5 µm
*Backside alignment accuracy: down to 1 µm
*Stage mechanical accuracy: 0.1 μm (step size)

*Automatic Light Intensity Drift Compensation:
**Channel 1 is calibrated to 9 mW/cm² at 365 nm
**Channel 2 is calibrated to 15 mW/cm² at 405 nm
*Programmable proximity exposure gap of 10-300 µm in 1 µm steps
*Programmable alignment gap of 1 - 999 µm in 1 µm steps
*Stored video imaging for overlay alignment
*Visible Back-Side Alignment System
*Lithography for 1” to 6” diameter wafers - '''6 mm maximum thickness'''
*Pieces down to 5 x 5 mm - Please be aware of the stage movement range: X ± 10mm, Y ± 5 mm
*TSA objective separation: 32 - 160 mm
*BSA objective separation: 15 - 100 mm
*Chuck Sizes:
**1" square (or wafer) and smaller, backside alignment capability
**3" wafer, no backside alignment
**4" wafer, backside alignment capability
**6" wafer, backside alignment capability
*Mask Holder Sizes:
**3"
**4"
**5" mask - can be modified to support a 6" mask but exposure area will still be ~4" diameter (see Staff)
**7"
*Bond alignment for 4” to 6” wafers, integrates with [[Wafer Bonder (SUSS SB6-8E)|SB6 bonder]]
*Other wafer sizes can be discussed with staff

==Documentation==

*[https://wiki.nanofab.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes BSA]
*[https://wiki.nanotech.ucsb.edu/w/images/7/75/MA-6_Exp_Mode_Visual_Aid.pdf MA6 Exposure Mode Information]
*[[MA6 Backside Alignment - Allowed Mark Locations]]
*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]
*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.

===CAD Files===

*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds|MA6-FrontBack_AlignMarks_only.gds]]

==Recipes==

*Recipes > Lithography > '''[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]'''
**''Also lists the exposure powers.''

E-Beam 2 (Custom)

2024-07-30T15:09:14Z

Sawyer l:

{{tool2|{{PAGENAME}}
|picture=IMG 5388.jpg
|type = Vacuum Deposition
|super= Lee Sawyer
|super2= Mike Barreraz
|phone=(805)839-2123
|location=Bay 3
|email=lee_sawyer@ucsb.edu
|description = Electron-Beam Evaporation System
|manufacturer = Temescal
|materials =
|toolid=8
}}
==About==
This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO2, ITO, TiO2, Ta2O5, and SrF2. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.

==Detailed Specifications==

*Temescal CV-6SXL 10 kV power supply
*Temescal 4-pocket Series 260 E-Beam turret source
*Temescal TemEbeam Controller (EBC); controls the high voltage power supply, electron beam position (up to 8 sweep patterns per pocket), and source pocket position
*Inficon IC/5 Thin Film Deposition Controller
*Cryo-pumped system with low E-7 ultimate base pressure
*Automatic vacuum sequencing via CHA Auto-Tech II
*Crystal thickness monitoring
*Sample size: up to 5” diameter non-heated, 4" diameter heated
*'''Heated''' sample holder (programmable), sample temps up to 370°C
*'''Oxygen''' gas MFC for maintaining oxide stoichiometry

==Documentation==

*[https://wiki.nanofab.ucsb.edu/w/images/d/d5/EB2_SOP_Rev_H.pdf E-Beam #2 Standard Operating Procedure]

==Recipes==

*[[E-Beam Evaporation Recipes#E-Beam%202%20.28Custom.29|Recipes > Vac. Deposition > '''E-Beam 2 (Custom)''']]
**Lists the characterized recipes for this machine - other materials may also be used with staff permission.

ICP Etch 2 (Panasonic E626I)

2024-07-30T15:06:31Z

Sawyer l:

{{tool2|{{PAGENAME}}
|picture=ICP1.jpg
|type = Dry Etch
|super= Lee Sawyer
|super2= Tony Bosch
|phone=(805)839-2123
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = ICP Etch
|manufacturer = Panasonic Factory Solutions
|model= E626I
|materials =
|toolid=23
}}
==About==

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.

==Detailed Specifications==

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature.
*Optimal Emission Monitoring
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, (Ar or CHF3), (CF4 or SF6), N2, and O2 in etch chamber
*O2, N2, CF4, H2O Vapor for ashing chamber
*Single 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer
*670nm laser endpoint detector with camera and simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

==Documentation==

*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
*{{file|Panasonic2.pdf|Training Notes}}
*{{file|Gas-Change.pdf|Gas Change Instructions}}
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]

===Online Training Video===

*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=8b676980-1c9a-420c-a2e5-ac180139939d Panasonic ICP#2 Training Video]
*'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

==Recipes==

*'''Recipes > Dry Etch >''' [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 '''ICP2 Etching Recipes''']
**Starting point recipes for ICP2 specifically.
*[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Process Control Data]]
**Historical Data records "calibration" etches to test tool performance.

*'''Recipes > [https://wiki.nanotech.ucsb.edu/w/index.php?title=Dry_Etching_Recipes Dry Etching Recipes]'''
**Table of all dry etching recipes, showing '''etched materials vs. tool''' etc.

File:ADT SOP Rev J.pdf

2024-07-17T15:54:20Z

Sawyer l: Sawyer l uploaded a new version of File:ADT SOP Rev J.pdf