UCSB Nanofab Wiki - User contributions [en]

ICP Etch 2 (Panasonic E626I)

2015-06-15T18:28:42Z

Silva m: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=ICP1.jpg
|type = Dry Etch
|super= Mike Silva
|phone=(805)839-3918x219
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = ?
|manufacturer = Panasonic Factory Solutions
|materials =
|toolid=23
}}
= About =

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

= Detailed Specifications =

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*RT - 80°C sample temperature for etching
*Optimal Emission Monitoring
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 in etch chamber
*O2, N2, CF4, H2O Vapor for ashing chamber
*Single 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer

=Documentation=
*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
*{{file|Panasonic2.pdf|Training Notes}}
*{{file|Gas-Change.pdf|Gas Change Instructions}}
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}

ICP Etch 2 (Panasonic E626I)

2015-06-15T18:26:57Z

Silva m: /* About */

{{tool|{{PAGENAME}}
|picture=ICP1.jpg
|type = Dry Etch
|super= Mike Silva
|phone=(805)839-3918x219
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = ?
|manufacturer = Panasonic Factory Solutions
|materials =
|toolid=23
}}
= About =

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down.

= Detailed Specifications =

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*RT - 80°C sample temperature for etching
*Optimal Emission Monitoring
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 in etch chamber
*2000 W ICP ashing chamber
*RT - 250°C sample temperature for ashing
*Ashing pressures 50 mT - 500 mT
*O2, N2, CF4, H2O Vapor for ashing chamber
*Multiple 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer

=Documentation=
*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
*{{file|Panasonic2.pdf|Training Notes}}
*{{file|Gas-Change.pdf|Gas Change Instructions}}
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}

ICP Etch 1 (Panasonic E646V)

2015-06-15T18:23:25Z

Silva m: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=ICP2.jpg
|type = Dry Etch
|super= Don Freeborn
|location=Bay 2
|description = ?
|manufacturer = Panasonic Factory Solutions, Japan
|materials =
|toolid=22
}}
= About =

This is a three-chamber tool for etching of a variety of materials. Chamber one is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. Chamber two is a 2000 W ICP chamber configures for plasma etching of photoresist and other materials such as BCB. The substrate is not biased and the chamber has CF4 and O2 for the gases. Chamber three is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system. The system accepts 6” wafers or pieces mounted to the wafers. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.of low-stress Nitride films.

= Detailed Specifications =

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*RT - 80°C sample temperature for etching
*Optimal Emission Monitoring
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 in etch chamber
*2000 W ICP ashing chamber
*RT - 250°C sample temperature for ashing
*Ashing pressures 50 mT - 500 mT
*O2, N2, CF4, H2O Vapor for ashing chamber
*Multiple 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer

=Documentation=
*{{fl|ICP1-Gas-Change-CHF3-AR.pdf|Gas Change Procedure (CHF3 & AR)}}
*{{fl|Gas Change CF4-SF6-CF4.pdf|Gas Change Procedure (CF4 & SF6)}}
*{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}
*{{fl|Changing N2 to He.pdf|Gas Change Procedure (N2 & He)}}

ICP Etch 1 (Panasonic E646V)

2015-06-15T18:23:18Z

Silva m: /* About */

DUV Flood Expose

2015-06-15T18:03:17Z

Silva m:

<nowiki><nowiki>Insert non-formatted text here</nowiki><nowiki><nowiki>Insert non-formatted text here</nowiki></nowiki></nowiki>{{tool|{{PAGENAME}}
|picture=DUV.jpg
|type = Lithography
|super= Mike Silva
|phone=(805)839|cell=(805)245-9356
|location=Bay 6
|email=silva@ece.ucsb.edu
|description = Deep UV Flood Exposer / Light source and HA-1KC2 power supply
|manufacturer = AB Manufacturing
|materials =
}}

= About =
This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.

Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.

=Detailed Specifications=
*DUV wavelengths are 200-260 nm; the lamp power is limited to 1000 watts and can operate in either constant intensity or constant power mode
*The full spectrum of Hg emission wavelengths from 200-450 nm is present on the sample
*Exposure can be performed on a 4" wafer
*Lamps are nominally rated for 400 hours
*A reset timer was added in Feb. 1995 to limit "on" time (ie. provide for auto shut-off) for bulb life conservation
=Spectra Images=

==DUV Exposure System Spectra==
[[image:DUV-System-Spectra.png|thumb|none|600px|DUV Exposure System Spectra]]

DUV Flood Expose

2015-06-15T18:02:55Z

Silva m:

<nowiki><nowiki>Insert non-formatted text here</nowiki><nowiki><nowiki>Insert non-formatted text here</nowiki></nowiki></nowiki>{{tool|{{PAGENAME}}
|picture=DUV.jpg
|type = Lithography
|super= Mike Silva
|phone=(805)839|cell=(805)245-9356
|location=Bay 6
|email=silva@ece.ucsb.edu
|description = Deep UV Flood Exposer / Light source and HA-1KC2 power supply
|manufacturer = AB Manufacturing
|materials =
}}

= About =
This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.

Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.

=Detailed Specifications=
*DUV wavelengths are 200-260 nm; the lamp power is limited to either 1000 watts and can operate in either constant intensity or constant power mode
*The full spectrum of Hg emission wavelengths from 200-450 nm is present on the sample
*Exposure can be performed on a 4" wafer
*Lamps are nominally rated for 400 hours
*A reset timer was added in Feb. 1995 to limit "on" time (ie. provide for auto shut-off) for bulb life conservation
=Spectra Images=

==DUV Exposure System Spectra==
[[image:DUV-System-Spectra.png|thumb|none|600px|DUV Exposure System Spectra]]

ICP Etch 2 (Panasonic E626I)

2014-03-13T15:45:09Z

Silva m: /* Detailed Specifications */

{{tool|{{PAGENAME}}
|picture=ICP2.jpg
|type = Dry Etch
|super= Mike Silva
|phone=(805)839-3918x219
|location=Bay 2
|email=silva@ece.ucsb.edu
|description = ?
|manufacturer = Panasonic Factory Solutions
|materials =
|toolid=23
}}
= About =

This is a three-chamber tool for etching of a variety of materials. Chamber one is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. Chamber two is a 2000 W ICP chamber configures for plasma etching of photoresist and other materials such as BCB. The substrate is not biased and the chamber has CF4 and O2 for the gases. Chamber three is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system. The system accepts 6” wafers or pieces mounted to the wafers. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.of low-stress Nitride films.

= Detailed Specifications =

*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
*RT - 80°C sample temperature for etching
*Optimal Emission Monitoring
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 in etch chamber
*2000 W ICP ashing chamber
*RT - 250°C sample temperature for ashing
*Ashing pressures 50 mT - 500 mT
*O2, N2, CF4, H2O Vapor for ashing chamber
*Multiple 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer

[[Link title]]=Documentation=
*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}
*{{file|Panasonic2.pdf|Training Notes}}

ICP Etch 2 (Panasonic E626I)

2014-03-13T15:23:56Z

Silva m: /* Documentation */

Thermal Evap 1

2014-03-12T17:13:11Z

Silva m:

{{tool|{{PAGENAME}}
|picture=Thermal1.jpg
|type = Vacuum Deposition
|super= Mike Silva
|phone=(805)839-3918
|location=Bay 3
|email=silva@ece.ucsb.edu
|description = NRC 3117 Three Source Thermal Evaporator
|manufacturer = ??
|materials =
|toolid=11
}}
= About =
This system is the primary thermal evaporator (tungsten strip or wire resistance heater source boats) in the cleanroom. It complements and augments offered by the Sharon e-beam system in that p-type contacts for III-V compounds such as Zn may only be done here, but it allows for easier access and depositions without the risk of radiation damage for many of the same materials as the e-beam. The system has been upgraded over the years from its original diffusion pump design to now include a cryopump and custom-built electronics for turn-key pumpdown and venting operations. Typically source materials are melted in "dimpled" flat tungsten boats. These include: Al, Ag, Au, Au/Ge, Au/Pd, Au/Zn, Cr, Mn, Ni, SiO and Zn. Cr is evaporated (sublimed) from a pre-coated rod and SiO from a special baffle heater, both available from R.D Mathis Co. Evaporation rates are manually controlled by varying the output voltage of a variac which feed various transformer taps (and feedthroughs) allowing for currents up to 200 amps. Although the unit heater boat selector can theoretically accommodate up to four units, present fixturing only allows for three, which are heated sequentially. Rates are monitored with a standard 6 mHz crystal oscillator. Samples typically are piece parts or quarters of 2 inch wafers, and are clipped onto a removable metal plate which sits at approximate 12 inches from the sources. At present 2 inch wafers would be the maximum sample size for 100% coverage. The substrate rotation fixture from the Sharon system can also be used. Substrate heating is possible with user supplied heater assemblies. Deposition cycling time from pumpdown to deposition to system venting is two hours, the same as the e-beam systems.

=Detailed Specifications=
*Standard 18" bell jar pumped by 8" Varian cryopump (HV8) driven by Ebara 2.1 compressor
*Low E-7 Torr ultimate pressure
*Rate Monitor: Maxtek TM-300
*Typical material rates: Al - 1 A/s @ 85 amps
**Au - 5 A/s @ 122 amps
**Cr - 2 A/s @ 85 amps
**Zn - 4.5 A/s @ 50 amps

= Materials Table =

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
|-
! colspan=8 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table</div>
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Symbol'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling, %'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Current, Amp'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Dep.rate, A/sec'''
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|Aluminum
|Al
|2.70
|8.17
|95
|85
|1
|Used often
|-
|Chromium
|Cr
| 7.20
| 28.95
|95
|85
|2
|Used often
|-
|Cobalt
|Co
|8.71
|25.74
|
|
|
|
|-
|Copper
|Cu
|8.93
|20.21
|100
|
|
|Used often
|-
|Gold
|Au
|19.32
|23.18
|101.2
|122
|5
|Used often
|-
|Gold/Palladium
|Au.5/Pd.5
|15.86
|23.96
|
|
|
|
|-
|Gold/Palladium
|Au.5/Pd.4
|16.40
|23.80
|
|
|
|
|-
|Gold/Zinc
|Au.95/Zn.05
|18.72
|22.89
|101.2
|
|
|
|-
|Gold/Zinc
|Au.90/Zn.10
|18.07
|22.58
|
|
|
|
|-
|Magnezium
|Mg
|1.74
|5.48
|98.4
|
|
|
|-
|Manganese
|Mn
|7.20
|23.40
|120
|100
|
|
|-
|Nickel
|Ni
|8.90
|26.68
|100
|50
|4.5
|Used often
|-
|Nichrome
|NiCr
|8.32
|27.59
|
|100
|0.4
|
|-
|Palladium
|Pd
|12.40
|24.73
|140.5
|62
|1.5
|Used often
|-
|Silicon Monoxide
|SiO
|2.13
|10.19
|120
|70
|
|
|-
|Silver
|Ag
|10.5
|16.69
|
|
|
|
|-
|Zinc
|Zn
|7.14
|17.18
|
|50
|4.5
|Used often
|-
|Zinc Oxide
|ZnO
|5.61
|15.88
|
|
|
|
|-
|StrontiumFluoride
|SrF2
|4.28
|12.15
|200
|
|
|
|-
|Iron
|Fe
|7.86
|25.30
|
|
|
|
|-
|ITO(IndiumTinOxide)
|In2O3 - SnO2
|6.43-7.14
|0.841
|
|
|
|
|-
|Permalloy
|Ni0.1Fe0.2
|8.7
|26.40
|
|140
|0.1
|
|-

Ion Beam Deposition (Veeco NEXUS)

2014-03-12T17:05:07Z

Silva m:

{{tool|{{PAGENAME}}
|picture=IBD.jpg
|type = Vacuum Deposition
|super= Mike Silva
|phone=(805)839-3918x219
|location=Bay 3
|email=silva@ece.ucsb.edu
|description = Ion Beam Deposition Tool
|manufacturer = Veeco
|materials =
|toolid=14
}}
= About =
This tool is designed for high quality, precise, reproducible deposition of dielectric films for optical quality films. Metallic material is ion bombarded from a target material and a reactive ion beam of oxygen and/or nitrogen is aimed at the surface, creating a metal-oxide or nitride on the sample.
The system is fully computer controlled to facilitate multi-layer stack recipes for high reflectivity or low reflectivity coatings.
The system is load locked and can handle wafers up to 6” in diameter as well as small pieces. Sample rotation and angling is used to facilitate material quality and allows for sidewall coverage on non-planar surfaces.
Uniformity is better than 1.5% over 6" wafers and reproducibility is expected to be within one percent (with pre-dep calibration).
The high-energy sputter deposition produces denser films than other techniques, improving optical damage threshold (and thus coating lifetime). This also causes the refractive indices to be slightly higher than comparable stoichiometric films deposited by other techniques.

Four metallic targets can be installed (producing Oxides & Nitrides of each). Ta & Si are always available, the others are rotated out as users need them.

The most common films for High-/Anti-Reflection (HR/AR) coatings are '''SiO2''' & '''Ta2O5''', both of which are extremely stable w/r/to refractive index. Users typically calibrate their dep. rates prior to critical deps. & multi-layer coatings.

= Detailed Specifications =

*Xenon target bombardment
*Nitrogen and/or Oxygen deposition assist source for metal oxides/nitrides
*Targets: Ta, Si, Al, Ti, ITO
*Pieces up to 6” wafers accepted
*Full programmable control through GUI for multi-layer optical coatings
*Standard Recipes: Ta2O5 (1.33 A/s rate), SiO2 (0.85A/s), Si3N4, TiO2.
** Custom recipes: Al2O3, SiOxNy, AlN, TaN
*Base Pressure ≤ 3e-8 Torr
*High quality, High Reflectivity DBR (>99.5%) mirrors demonstrated in blue wavelengths
*Wide-band Anti-Reflection coatings demonstrated in near-IR (~1550nm)

=Documentation=
*[[media:IBDInstructions.pdf|Operating Instructions]]
*[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Sputtering Recipes: Ion Beam Deposition (Veeco NEXUS)]]

Ion Beam Deposition (Veeco NEXUS)

2014-03-12T16:28:42Z

Silva m:

{{tool|{{PAGENAME}}
|picture=IBD.jpg
|type = Vacuum Deposition
|super= Mike Silva
|phone=(805)839-3918x219
|cell = (805) 245-9356
|location=Bay 3
|email=silva@ece.ucsb.edu
|description = Ion Beam Deposition Tool
|manufacturer = Veeco
|materials =
|toolid=14
}}
= About =
This tool is designed for high quality, precise, reproducible deposition of dielectric films for optical quality films. Metallic material is ion bombarded from a target material and a reactive ion beam of oxygen and/or nitrogen is aimed at the surface, creating a metal-oxide or nitride on the sample.
The system is fully computer controlled to facilitate multi-layer stack recipes for high reflectivity or low reflectivity coatings.
The system is load locked and can handle wafers up to 6” in diameter as well as small pieces. Sample rotation and angling is used to facilitate material quality and allows for sidewall coverage on non-planar surfaces.
Uniformity is better than 1.5% over 6" wafers and reproducibility is expected to be within one percent (with pre-dep calibration).
The high-energy sputter deposition produces denser films than other techniques, improving optical damage threshold (and thus coating lifetime). This also causes the refractive indices to be slightly higher than comparable stoichiometric films deposited by other techniques.

Four metallic targets can be installed (producing Oxides & Nitrides of each). Ta & Si are always available, the others are rotated out as users need them.

The most common films for High-/Anti-Reflection (HR/AR) coatings are '''SiO2''' & '''Ta2O5''', both of which are extremely stable w/r/to refractive index. Users typically calibrate their dep. rates prior to critical deps. & multi-layer coatings.

= Detailed Specifications =

*Xenon target bombardment
*Nitrogen and/or Oxygen deposition assist source for metal oxides/nitrides
*Targets: Ta, Si, Al, Ti, ITO
*Pieces up to 6” wafers accepted
*Full programmable control through GUI for multi-layer optical coatings
*Standard Recipes: Ta2O5 (1.33 A/s rate), SiO2 (0.85A/s), Si3N4, TiO2.
** Custom recipes: Al2O3, SiOxNy, AlN, TaN
*Base Pressure ≤ 3e-8 Torr
*High quality, High Reflectivity DBR (>99.5%) mirrors demonstrated in blue wavelengths
*Wide-band Anti-Reflection coatings demonstrated in near-IR (~1550nm)

=Documentation=
*[[media:IBDInstructions.pdf|Operating Instructions]]
*[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Sputtering Recipes: Ion Beam Deposition (Veeco NEXUS)]]

Mike Silva

2014-03-12T16:26:31Z

Silva m:

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109B
|phone = (805) 839-3918x219
|cell = (805) 245-9356
|email = silva@ece.ucsb.edu
}}

=About=
Information to come

=Current Work=
Information to come.

=Tools=
{{PAGENAME}} is in charge of the following tools:
{|
|-valign="top"
|
*[[DUV Flood Expose]]
*[[High Temp Oven (Blue M)]]
*[[Sputter 5 (Lesker AXXIS)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[Thermal Evap 1]]
*[[Ion Beam Deposition (Veeco NEXUS)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[Plasma Clean (Gasonics 2000)]]
||
*[[HF Vapor Etch]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Step Profile (Dektak IIA)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Ellipsometer (Rudolph)]]
* [[Film Stress (Tencor Flexus)]]
* [[Optical Film Thickness (Nanometric)]]
|}

Mike Silva

2014-03-12T16:26:07Z

Silva m:

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109C
|phone = (805) 839-3918x219
|cell = (805) 245-9356
|email = silva@ece.ucsb.edu
}}

=About=
Information to come

=Current Work=
Information to come.

=Tools=
{{PAGENAME}} is in charge of the following tools:
{|
|-valign="top"
|
*[[DUV Flood Expose]]
*[[High Temp Oven (Blue M)]]
*[[Sputter 5 (Lesker AXXIS)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[Thermal Evap 1]]
*[[Ion Beam Deposition (Veeco NEXUS)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[Plasma Clean (Gasonics 2000)]]
||
*[[HF Vapor Etch]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Step Profile (Dektak IIA)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Ellipsometer (Rudolph)]]
* [[Film Stress (Tencor Flexus)]]
* [[Optical Film Thickness (Nanometric)]]
|}

Mike Silva

2014-03-12T16:25:32Z

Silva m: /* Current Work */

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109C
|phone = (805) 839-3918x219
|cell =
|email = silva@ece.ucsb.edu
}}

=About=
Information to come

=Current Work=
Information to come.

=Tools=
{{PAGENAME}} is in charge of the following tools:
{|
|-valign="top"
|
*[[DUV Flood Expose]]
*[[High Temp Oven (Blue M)]]
*[[Sputter 5 (Lesker AXXIS)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[Thermal Evap 1]]
*[[Ion Beam Deposition (Veeco NEXUS)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[Plasma Clean (Gasonics 2000)]]
||
*[[HF Vapor Etch]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Step Profile (Dektak IIA)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Ellipsometer (Rudolph)]]
* [[Film Stress (Tencor Flexus)]]
* [[Optical Film Thickness (Nanometric)]]
|}

Mike Silva

2014-03-12T16:25:05Z

Silva m: /* About */

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109C
|phone = (805) 839-3918x219
|cell =
|email = silva@ece.ucsb.edu
}}

=About=
Information to come

=Current Work=
Nullam auctor ligula vel tortor luctus porttitor quis vitae arcu. Mauris venenatis tincidunt leo, vel vehicula lacus ornare in. Suspendisse blandit egestas lectus, sed hendrerit metus condimentum sed. Etiam adipiscing sagittis mattis. Class aptent taciti sociosqu ad litora torquent per conubia nostra, per inceptos himenaeos. Phasellus eu velit justo, nec semper lacus. Sed a quam orci. Maecenas in semper tortor. Etiam ac nunc dui, in laoreet est. Fusce erat nisl, pellentesque iaculis cursus et, sollicitudin a quam. Mauris quis ligula vel enim viverra eleifend. Sed cursus commodo sodales. Nullam dictum odio in augue pharetra placerat. Sed ligula quam, laoreet id sodales at, lacinia a ligula.

=Tools=
{{PAGENAME}} is in charge of the following tools:
{|
|-valign="top"
|
*[[DUV Flood Expose]]
*[[High Temp Oven (Blue M)]]
*[[Sputter 5 (Lesker AXXIS)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[Thermal Evap 1]]
*[[Ion Beam Deposition (Veeco NEXUS)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[Plasma Clean (Gasonics 2000)]]
||
*[[HF Vapor Etch]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Step Profile (Dektak IIA)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Ellipsometer (Rudolph)]]
* [[Film Stress (Tencor Flexus)]]
* [[Optical Film Thickness (Nanometric)]]
|}

DUV Flood Expose

2014-03-12T16:23:44Z

Silva m:

<nowiki><nowiki>Insert non-formatted text here</nowiki><nowiki><nowiki>Insert non-formatted text here</nowiki></nowiki></nowiki>{{tool|{{PAGENAME}}
|picture=DUV.jpg
|type = Lithography
|super= Mike Silva
|phone=(805)839|cell=(805)245-9356
|location=Bay 6
|email=silva@ece.ucsb.edu
|description = Deep UV Flood Exposer / Light source and HA-1KC2 power supply
|manufacturer = AB Manufacturing
|materials =
}}

= About =
This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.

Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.

=Detailed Specifications=
*DUV wavelengths are 200-260 nm; the lamp power is limited to either 1250 or 2100 watts and can operate in either constant intensity or constant power mode
*The full spectrum of Hg emission wavelengths from 200-450 nm is present on the sample
*Exposure can be performed on a 4" wafer
*Lamps are nominally rated for 400 hours
*A reset timer was added in Feb. 1995 to limit "on" time (ie. provide for auto shut-off) for bulb life conservation
=Spectra Images=
==Aligner with No Filter==
[[image:DUV-Spectra-No-Filter.png|thumb|none|600px|Aligner with No Filter]]
==Aligner with Filter for i-line Exposure==
[[image:DUV-Spectra-With-Filter.png|thumb|none|600px|Aligner with Filter for i-line Exposure]]
==DUV Exposure System Spectra==
[[image:DUV-System-Spectra.png|thumb|none|600px|DUV Exposure System Spectra]]

DUV Flood Expose

2014-03-12T16:22:45Z

Silva m:

<nowiki><nowiki>Insert non-formatted text here</nowiki><nowiki><nowiki>Insert non-formatted text here</nowiki></nowiki></nowiki>{{tool|{{PAGENAME}}
|picture=DUV.jpg
|type = Lithography
|super= Mike Silva
|phone=(805)839-3918x219<br
|cell=(805)245-9356
|location=Bay 6
|email=silva@ece.ucsb.edu
|description = Deep UV Flood Exposer / Light source and HA-1KC2 power supply
|manufacturer = AB Manufacturing
|materials =
}}

= About =
This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.

Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.

=Detailed Specifications=
*DUV wavelengths are 200-260 nm; the lamp power is limited to either 1250 or 2100 watts and can operate in either constant intensity or constant power mode
*The full spectrum of Hg emission wavelengths from 200-450 nm is present on the sample
*Exposure can be performed on a 4" wafer
*Lamps are nominally rated for 400 hours
*A reset timer was added in Feb. 1995 to limit "on" time (ie. provide for auto shut-off) for bulb life conservation
=Spectra Images=
==Aligner with No Filter==
[[image:DUV-Spectra-No-Filter.png|thumb|none|600px|Aligner with No Filter]]
==Aligner with Filter for i-line Exposure==
[[image:DUV-Spectra-With-Filter.png|thumb|none|600px|Aligner with Filter for i-line Exposure]]
==DUV Exposure System Spectra==
[[image:DUV-System-Spectra.png|thumb|none|600px|DUV Exposure System Spectra]]

DUV Flood Expose

2014-03-12T16:21:17Z

Silva m:

{{tool|{{PAGENAME}}
|picture=DUV.jpg
|type = Lithography
|super= Mike Silva
|phone=(805)839-3918x219<br
|cell=(805)245-9356
|location=Bay 6
|email=silva@ece.ucsb.edu
|description = Deep UV Flood Exposer / Light source and HA-1KC2 power supply
|manufacturer = AB Manufacturing
|materials =
}}

= About =
This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.

Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.

=Detailed Specifications=
*DUV wavelengths are 200-260 nm; the lamp power is limited to either 1250 or 2100 watts and can operate in either constant intensity or constant power mode
*The full spectrum of Hg emission wavelengths from 200-450 nm is present on the sample
*Exposure can be performed on a 4" wafer
*Lamps are nominally rated for 400 hours
*A reset timer was added in Feb. 1995 to limit "on" time (ie. provide for auto shut-off) for bulb life conservation
=Spectra Images=
==Aligner with No Filter==
[[image:DUV-Spectra-No-Filter.png|thumb|none|600px|Aligner with No Filter]]
==Aligner with Filter for i-line Exposure==
[[image:DUV-Spectra-With-Filter.png|thumb|none|600px|Aligner with Filter for i-line Exposure]]
==DUV Exposure System Spectra==
[[image:DUV-System-Spectra.png|thumb|none|600px|DUV Exposure System Spectra]]

DUV Flood Expose

2014-03-12T16:19:35Z

Silva m:

{{tool|{{PAGENAME}}
|picture=DUV.jpg
|type = Lithography
|super= Mike Silva
|phone=(805)839-3918x219 
|cell=(805)245-9356
|location=Bay 6
|email=silva@ece.ucsb.edu
|description = Deep UV Flood Exposer / Light source and HA-1KC2 power supply
|manufacturer = AB Manufacturing
|materials =
}}

= About =
This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.

Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.

=Detailed Specifications=
*DUV wavelengths are 200-260 nm; the lamp power is limited to either 1250 or 2100 watts and can operate in either constant intensity or constant power mode
*The full spectrum of Hg emission wavelengths from 200-450 nm is present on the sample
*Exposure can be performed on a 4" wafer
*Lamps are nominally rated for 400 hours
*A reset timer was added in Feb. 1995 to limit "on" time (ie. provide for auto shut-off) for bulb life conservation
=Spectra Images=
==Aligner with No Filter==
[[image:DUV-Spectra-No-Filter.png|thumb|none|600px|Aligner with No Filter]]
==Aligner with Filter for i-line Exposure==
[[image:DUV-Spectra-With-Filter.png|thumb|none|600px|Aligner with Filter for i-line Exposure]]
==DUV Exposure System Spectra==
[[image:DUV-System-Spectra.png|thumb|none|600px|DUV Exposure System Spectra]]

DUV Flood Expose

2014-03-12T16:16:38Z

Silva m:

{{tool|{{PAGENAME}}
|picture=DUV.jpg
|type = Lithography
|super= Mike Silva
|phone=(805)839-3918x219
|cell=(805)245-9356
|location=Bay 6
|email=silva@ece.ucsb.edu
|description = Deep UV Flood Exposer / Light source and HA-1KC2 power supply
|manufacturer = AB Manufacturing
|materials =
}}

= About =
This unit consists of a collimated deep ultraviolet (DUV) light source (mercury gas discharge short arc lamp) and power supply. The substrate is placed on a rotating chuck (not presently working) and is exposed by opening a timer-controlled shutter.

Materials that are exposed are primarily spun-on thin films such as PMMA, PMGI, etc.

=Detailed Specifications=
*DUV wavelengths are 200-260 nm; the lamp power is limited to either 1250 or 2100 watts and can operate in either constant intensity or constant power mode
*The full spectrum of Hg emission wavelengths from 200-450 nm is present on the sample
*Exposure can be performed on a 4" wafer
*Lamps are nominally rated for 400 hours
*A reset timer was added in Feb. 1995 to limit "on" time (ie. provide for auto shut-off) for bulb life conservation
=Spectra Images=
==Aligner with No Filter==
[[image:DUV-Spectra-No-Filter.png|thumb|none|600px|Aligner with No Filter]]
==Aligner with Filter for i-line Exposure==
[[image:DUV-Spectra-With-Filter.png|thumb|none|600px|Aligner with Filter for i-line Exposure]]
==DUV Exposure System Spectra==
[[image:DUV-System-Spectra.png|thumb|none|600px|DUV Exposure System Spectra]]

Sputter 5 (AJA ATC 2200-V)

2013-06-14T17:49:02Z

Silva m: /* Heading text */

==
=== Heading text ===

====
===== Heading text =====
====
==
{{tool|{{PAGENAME}}
|picture=Sputter5.jpg
|type = Vacuum Deposition
|super= Mike Silva
|location=Bay 3
|description = ?
|manufacturer = Kurt J Lesker
|materials =
|toolid=
}}

Sputter 5 (AJA ATC 2200-V)

2013-06-14T17:48:19Z

Silva m:

==
=== Heading text ===
====
===== Heading text =====
====
==
{{tool|{{PAGENAME}}
|picture=Sputter5.jpg
|type = Vacuum Deposition
|super= Mike Silva
|location=Bay 3
|description = ?
|manufacturer = Kurt J Lesker
|materials =
|toolid=
}}

Mike Silva

2013-06-14T17:47:07Z

Silva m:

{{staff|{{PAGENAME}}
|position = Senior Development Engineer
|room = 1109C
|phone = (805) 839-3918x219
|cell =
|email = silva@ece.ucsb.edu
}}

=About=
Lorem ipsum dolor sit amet, consectetur adipiscing elit. Aenean aliquam sapien mattis urna tempus eu malesuada neque consectetur. Nulla molestie turpis eget felis interdum nec ullamcorper elit gravida. Donec tincidunt odio et neque feugiat et imperdiet neque congue. Suspendisse pretium pulvinar mi, a tincidunt lorem suscipit nec. Vivamus condimentum massa ac enim lobortis dignissim pellentesque turpis fermentum. Fusce ac neque ultricies nisi placerat adipiscing. Duis tristique feugiat feugiat. Quisque nec facilisis nisl.

=Current Work=
Nullam auctor ligula vel tortor luctus porttitor quis vitae arcu. Mauris venenatis tincidunt leo, vel vehicula lacus ornare in. Suspendisse blandit egestas lectus, sed hendrerit metus condimentum sed. Etiam adipiscing sagittis mattis. Class aptent taciti sociosqu ad litora torquent per conubia nostra, per inceptos himenaeos. Phasellus eu velit justo, nec semper lacus. Sed a quam orci. Maecenas in semper tortor. Etiam ac nunc dui, in laoreet est. Fusce erat nisl, pellentesque iaculis cursus et, sollicitudin a quam. Mauris quis ligula vel enim viverra eleifend. Sed cursus commodo sodales. Nullam dictum odio in augue pharetra placerat. Sed ligula quam, laoreet id sodales at, lacinia a ligula.

=Tools=
{{PAGENAME}} is in charge of the following tools:
{|
|-valign="top"
|
*[[DUV Flood Expose]]
*[[High Temp Oven (Blue M)]]
*[[Sputter 5 (Lesker AXXIS)]]
*[[PECVD 2 (Advanced Vacuum)]]
*[[Thermal Evap 1]]
*[[Ion Beam Deposition (Veeco NEXUS)]]
*[[ICP Etch 2 (Panasonic E640)]]
*[[Plasma Clean (Gasonics 2000)]]
||
*[[HF Vapor Etch]]
* [[Tube Furnace Wafer Bonding (Thermco)]]
* [[Step Profile (Dektak IIA)]]
* [[Step Profilometer (Dektak 6M)]]
* [[Ellipsometer (Rudolph)]]
* [[Film Stress (Tencor Flexus)]]
* [[Optical Film Thickness (Nanometric)]]
|}