https://wiki.nanofab.ucsb.edu/w/api.php?action=feedcontributions&feedformat=atom&user=Thibeault
UCSB Nanofab Wiki - User contributions [en]
2026-04-25T00:23:43Z
User contributions
MediaWiki 1.43.8
https://wiki.nanofab.ucsb.edu/w/index.php?title=Services&diff=162818
Services
2025-02-12T01:18:21Z
<p>Thibeault: added language to technical contact requirement.</p>
<hr />
<div>[[Category:Services]]<br />
''Procedures and paperwork to get '''your students/employees''' into the NanoFab.'' <br />
<br />
''If you are looking for '''fabrication services by NanoFab staff''', please see [https://wiki.nanotech.ucsb.edu/wiki/Services#Fabrication_Services_by_NanoFab_Staff this section].''<br />
<br />
''Hourly rates can be found on [https://www.nanotech.ucsb.edu/services#comp-k3rx7hk4 this page].''<br />
<br />
<br />
Please choose the appropriate section:<br />
<br />
__TOC__<br />
<!-- Table of Contents here, forced --><br />
<br />
<br /><br />
<br />
==Lab Orientation==<br />
The lab orientation takes between 1-2 hours and is scheduled based on new user demand. <br />
<br />
The orientation will explain actual lab use, equipment scheduling and trainings, discuss safety policy, enter users into the access system, tour the gowning room area and explain any questions about lab or tool use. Please feel free to [[Brian Thibeault|call or email]] to discuss in more detail. See the below sections for the additional info needed to attend a lab orientation.<br />
<br />
===Onboarding for out-of-town visitors===<br />
For lab users visiting from out of town, please start your scheduling with us at least 3-4 weeks in advance so we can help you schedule a lab orientation and tool trainings around your planned trip dates, and help make your trip efficient and productive. Contact [[Demis D. John|Demis]] for advice on which tools to get trained on.<br />
<br />
==U.C. Santa Barbara Researchers==<br />
'''Applies to:''' UCSB faculty, post-docs, graduate students, undergraduates, interns etc.<br />
<br />
*Contact the [[Brian Thibeault|Lab Director, Brian Thibeault]] for lab access.<br />
<br />
==Industry and non-U.C. Academic Institutions==<br />
'''Applies to:''' Employees of Companies (for-profit), and researchers from Universities/Academic Institutions that are '''''not''''' part for the University of California system. This includes Government research labs in any country.<br />
'''<big>Follow ALL instructions below:</big>'''<br />
<br />
If you think your institution has previously sent people to use our lab, some of this paperwork may already be in place. Contact the [[Brian Thibeault|Lab Director]] to find out if that is the case.<br />
<br />
====Paperwork for new Institutions (Non-UC)====<br />
For new institutions to gain access to the UCSB Nanofabrication Facility, please provide the following documents. Email the docs to both [[Claudia Gutierrez]] and the [[Brian Thibeault|Lab Director]].<br />
<br />
#Submit a Detailed [//wiki.nanotech.ucsb.edu/w/images/7/79/Nanofabrication_Facility_Project_Description.xlsx project description (download)] to the [[Brian Thibeault|Lab Director]].<br />
#Nanofab staff acceptance<br />
#[//wiki.nanotech.ucsb.edu/w/images/a/a2/UCSB-Facilities-Use-Agreement.pdf UCSB Facility Use Agreement (download)] signed by an official company signatory (attached form)<br />
#Provide a General Liability Insurance Certificate<br />
##Commercial Form General Liability requirements:<br />
###Combined Single Limit per Occurrence: $1,000,000<br />
###General Aggregate, Bodily Injury, Property Damage: $2,000,000<br />
### The ''Regents of the University of California'' must be named as an additional insured.<br />
###[//wiki.nanotech.ucsb.edu/w/images/9/96/SampleCOI.pdf An example certificate is attached (download)]. Your certificate should have the same basic format and information as shown. The certificate should be emailed to the [[Brian Thibeault|Lab Director]].<br />
###The CERTIFICATE HOLDER shall be identified as follows: <br />
###:The Regents of the University of California<br />
###:Contracts & Property Office<br />
###:SAASB Bldg., Rm. 3203<br />
###:University of California<br />
###:Santa Barbara, CA 93106-2095<br />
#Provide Proof of Workers’ Compensation Insurance or equivalent coverage. This is required under California state law. If the required certificate of insurance is not received and approved prior to the Facility User's intended use of facility, Facility User shall not be allowed to use University facilities.<br />
<br />
====Tasks for each Lab User====<br />
For EACH researcher that will enter the lab, please follow these directions:<br />
<br />
#Fill out, sign, and return the [//wiki.nanotech.ucsb.edu/w/images/e/ef/UCSB-Facilities-Use-Blanket-Waiver.pdf UCSB Blanket Liability Waiver (download)] to the [[Brian Thibeault|Lab director]]<br />
#Email [[Claudia Gutierrez]] to request a UCSBNetID (required) and to gain access to the UCSB Learning Center for basic on-line safety training.<br />
#Take the [https://www.ehs.ucsb.edu/training/uc-laboratory-safety-fundamentals-initial-online UCSB EH&S online safety course] once you have gained access.<br />
#Request UCSB Nanofab orientation/training by the [[Brian Thibeault|lab manager]] with review of the lab policy which can be found at the following link: [[Lab Rules|NanoFab Lab Rules]]<br />
#[[Frequently Asked Questions#What Supplies do I need to bring to the lab.3F|Please read this FAQ page (link here)]] for a list of items you may need to bring to the lab for your research.<br />
<br />
==Other U.C. Campuses==<br />
'''Applies To:''' Researchers at other University of California campuses, apart from U.C Santa Barbara.<br />
'''<big>Follow ALL instructions below:</big>'''<br />
<br />
====Paperwork for new UC institutions====<br />
For new UC institutions to gain access to the UCSB Nanofabrication Facility, please provide the following documents. Send the files to both [[Claudia Gutierrez]] and the [[Brian Thibeault|Lab Director]].<br />
<br />
#Submit a Detailed [//wiki.nanotech.ucsb.edu/w/images/7/79/Nanofabrication_Facility_Project_Description.xlsx project description (download)] to [Mailto:nanofab-job-inquiry@ece.ucsb.edu Demis D. John & Brian Thibeault]<br />
#Nanofab staff acceptance<br />
#[[Media:Facility-Use-MOU---Intercampus-UC-User.pdf|Facilities Use - Memorandum of Understanding - Inter-UC Campus Use (download)]] - signed by Individual lab users. [https://wiki.nanotech.ucsb.edu/w/images/7/7c/Attachment_A_-_UCSB_Master_Facilities_Use_Agreement_Labs.pdf Attachment A] Lists UCSB facilities covered by the agreement.<br />
<br />
====Tasks for each UC Lab User====<br />
For EACH researcher that will enter the lab, please follow these directions:<br />
<br />
#Fill out, sign, and return the [//wiki.nanotech.ucsb.edu/w/images/e/ef/UCSB-Facilities-Use-Blanket-Waiver.pdf UCSB Blanket Liability Waiver (download)] to the [[Brian Thibeault|Lab director]]<br />
#Email [[Claudia Gutierrez]] to request a UCSBNetID (required) and to gain access to the UCSB Learning Center for basic on-line safety training.<br />
#Take the [https://www.ehs.ucsb.edu/training/uc-laboratory-safety-fundamentals-initial-online UCSB EH&S online safety course] once you have gained access.<br />
#Request UCSB Nanofab orientation/training by the [[Brian Thibeault|lab manager]] with review of the lab policy which can be found at the following link: [[Lab Rules|NanoFab Lab Rules]]<br />
#[[Frequently Asked Questions#What Supplies do I need to bring to the lab.3F|Please read this FAQ page (link here)]] for a list of items you may need to bring to the lab for your research.<br />
<br />
==Fabrication Services by NanoFab Staff==<br />
''Perform '''fabrication services via NanoFab staff''', instead of your staff/employees entering our lab.''<br />
<br />
===Important Info on Fabrication Services===<br />
<br />
*[https://www.nanotech.ucsb.edu/services#comp-k3rx7hk4 '''Rates are listed here''']. <br />
**We bill for both "<u>''Use of Facility + Equipment''</u>" '''plus''' "''<u>Dedicated staff support</u>''" time per hour.<br />
**This is similar to your own employee using the lab.<br />
**The technical contact for all work performed by UCSB Nanofab staff must be an employee or paid contractor of the institution that has signed the service agreement with UCSB. '''--''' '''New 2025-02'''<br />
**We will only apply Academic/Gov't rates if the technical contact directing the work is at the academic institution we have a signed service agreement with. '''--''' '''New 2025-02'''<br />
*You will work directly with [[Demis D. John|Demis]] or [[Staff List#Process Group|his staff]] to schedule the work, if the project is accepted.<br />
**Any project must first be accepted by our Project Scientists.<br />
**We have limited staff and are not a foundry, and we will only accept jobs that we are capable of performing with success.<br />
*There is '''''no guarantee''''' of research results or success in fabrication. We may also be able to suggest other ways to get your devices made in our lab if Staff use is not appropriate for your project.<br />
*You will be <u>billed for the Actual time and materials required during the job</u>, regardless of project outcome. <br />
**We can provide only a rough ''estimate'' of time and cost because it's an hourly service, not a "quote".<br />
*We send out bills monthly, with payment expected as Net30; Credit card payments are accepted.<br />
*[[Frequently Asked Questions#Publications acknowledging the Nanofab|Publications Policy]] - fabrication executed by NanoFab Staff is often significant "''intellectual contribution''". Acknowledgement of NanoFab use is required at minimum.<br />
<br />
===Request Remote Fabrication Services===<br />
''Submitting jobs for "remote" fabrication services requires the following steps:''<br />
<br />
1. Contact us ([Mailto:nanofab-job-inquiry@ece.ucsb.edu?subject=Fab&#x20;Services&#x20;Inquiry email us]) to determine project feasibility or ask questions.<br />
<br />
2. Nanofab Staff acceptance of project.<br />
<br />
====Paperwork for Fabrication Services====<br />
3. Submit the [//wiki.nanotech.ucsb.edu/w/images/7/79/Nanofabrication_Facility_Project_Description.xlsx '''Project Info and Description Form'''] (download) to [Mailto:nanofab-job-inquiry@ece.ucsb.edu?subject=Fab&#x20;Services&#x20;Project&#x20;Description Demis D. John and Brian Thibeault]<br />
<br />
*No signatures required, only project info and contact info for internal billing purposes.<br />
<br />
4. Return the [//wiki.nanotech.ucsb.edu/w/images/1/1d/UCSB_Service_Agreement.pdf '''UCSB Service Agreement'''] (download) <br />
<br />
*Requires signature from your institution (<u>signature authority required</u>, typically ''not'' the professor or graduate student. Business or Contracts Bept., for example)<br />
<br />
*Only one agreement is needed per institution. Ask us to find out if your inst. already has one in place.<br />
<br />
*If you are a '''UCSB Group''', we ''don't'' need the Service Agreement from you, only the '''''Project Info & Description Form''''' (above).<br />
*If you are a '''group from another UC''', we don't need the Service Agreement, instead we need a different form: [[Media:Facility-Use-MOU---Intercampus-UC-User.pdf|The Inter-Campus MOU]] signed by the User submitting the job (here is [https://wiki.nanotech.ucsb.edu/w/images/7/7c/Attachment_A_-_UCSB_Master_Facilities_Use_Agreement_Labs.pdf Attachment A] listing included UCSB facilities.).<br />
<br />
===='''Statement of Work'''====<br />
For each request, please provide a quick PPT/Word/similar doc explaining exactly what you need done ("SOW"), which should include:<br />
<br />
*Please name your file something like: "'''''2024-08-21''' SiO2 Dep '''v1'''.pptx''"<br />
**We use the approx date as your BatchID<br />
**Revisions will update only the ''v1/2/3'' number, but keep the BatchID the same.<br />
*How many wafers to run and/or number of samples to be provided.<br />
*Size/Shape of samples. Eg. "''4-inch wafers''" or "''irregular ~1cm pieces''"<br />
*Exact processing steps to perform. Staff will assist filling in any missing details.<br />
**Please clearly state which steps UCSB Staff will perform, versus steps your staff will perform, if needed.<br />
*Targets and acceptable tolerances for the main steps, eg. "''Deposit 500nm of SiO2, acceptable range 450-550nm (±10% tolerance)''". <br />
**Note that tight tolerances (<<10%) will require us to run additional calibrations at your expense, so please choose a tolerance that is ''required'' for your devices to work.<br />
**It is common to '''not know the tolerance''' for research devices, so just leave that out and a "best effort" is usually acceptable.<br />
<br />
===== Example SOWs =====<br />
For some tools the programming/instructions can be fairly complex - below are examples for tools that require more detailed instructions:<br />
*An example PPT for Stepper lithography jobs can be found here: [[Media:UCSB ASML DUV Stepper - Programming Worksheet.pptx|UCSB_Stepper_-_Programming_Worksheet.pptx]]<br />
*An example PPT for Dicing (die singulation) can be found here: [[Media:Dicing - Example Dicing Instructions for UC Santa Barbara v2.pptx|Dicing - Example Dicing Instructions for UC Santa Barbara v2.pptx]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=162277
Lithography Recipes
2024-08-20T21:58:46Z
<p>Thibeault: /* Process Ranking Table */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=162276
Lithography Recipes
2024-08-20T21:57:01Z
<p>Thibeault: /* Process Ranking Table */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}}<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Vacuum_Deposition_Recipes&diff=162274
Vacuum Deposition Recipes
2024-08-19T18:10:51Z
<p>Thibeault: /* Deposition Tools/Materials Table */</p>
<hr />
<div>===[[Process Group - Process Control Data#Deposition .28Process Control Data.29|<u>Process Control Data</u>]]===<br />
<small>''See [[Process Group - Process Control Data#Deposition .28Process Control Data.29|linked page]] for process control data (calibration data over time, such as dep. rate, refractive index, stress etc.) over time, for a selection of highly used tools/films.''</small><br />
<br />
===Deposition Tools/Materials Table===<br />
''The Key/Legend for this table's <code>A...R6</code> values is at the [[Vacuum Deposition Recipes#Process Ranking Table|<u>bottom of the page</u>]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#d0e7ff"<br />
! colspan="16" width="1675" height="45" |<div style="font-size: 150%;">Vacuum Deposition Recipes</div><br />
|- bgcolor="#d0e7ff"<br />
|<!-- INTENTIONALLY LEFT BLANK --><br><br />
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[E-Beam Evaporation Recipes|E-Beam Evaporation]]'''<br />
! colspan="4" |'''[[Sputtering Recipes|Sputtering]]'''<br />
! colspan="2" bgcolor="#d0e7ff" align="center" |'''[[Thermal Evaporation Recipes|Thermal Evaporation]]'''<br />
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[PECVD Recipes|Plasma Enhanced Chemical<br>Vapor Deposition (PECVD)]]'''<br />
! width="90" bgcolor="#d0e7ff" align="center" |'''[[Atomic Layer Deposition Recipes|Atomic Layer Deposition]]'''<br />
! width="80" bgcolor="#d0e7ff" align="center" |'''[[Molecular Vapor Deposition Recipes|Molecular Vapor Deposition]]'''<br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(AJA ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(AJA ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_5_.28AJA_ATC_2200-V.29 Sputter 5 (AJA ATC 2200-V)]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAL)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ag<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R3]]<br />
|[[Sputtering Recipes|R1]]<br />
|R1<br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub><br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R5]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Al2O3 deposition .28ALD CHAMBER 3.29|R4]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
!AuGe<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
|<br />
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|<br />
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|<br />
|<br />
|<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |AlN<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R1]]<br />
|<br><br />
|R1<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Atomic Layer Deposition Recipes#AlN deposition .28ALD CHAMBER 3.29|R4]]<br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Au<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |R3<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |B<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |C<br />
| bgcolor="#eeffff" align="center" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R3]]<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |CeO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Co<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Cr<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
|<br><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29 R3]<br />
|<br><br />
|{{Rl|Sputtering_Recipes|Sputter_5_.28AJA_ATC_2200-V.29|R3}}<br />
|<br><br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Cu<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Fe<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|[[Sputtering Recipes|R3]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ge<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
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|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
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|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
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| bgcolor="#eeffff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=PECVD_Recipes#Amorphous-Si_deposition_.28PECVD_.232.29 R3]<br />
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! bgcolor="#d0e7ff" align="center" |SiN<br />
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|[[Sputtering Recipes|R3]]<br />
|[[Sputtering Recipes|R1]]<br />
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|[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R6]]<br />
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|[[PECVD Recipes#SiN deposition .28PECVD .231.29|R6]]<br />
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|[[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|R6]]<br />
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|[[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|R6]]<br />
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! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub><br />
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! bgcolor="#d0e7ff" align="center" |SiO<sub>x</sub>N<sub>y</sub><br />
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|[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R3]]<br />
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|[[PECVD Recipes#SiO2 deposition .28PECVD .231.29|R4]]<br />
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! bgcolor="#d0e7ff" align="center" |Sn<br />
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| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |SrF<sub>2</sub><br />
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|[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
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! bgcolor="#d0e7ff" align="center" |Ta<br />
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! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R1]]<br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R1]]<br />
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|[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R6]]<br />
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! bgcolor="#d0e7ff" align="center" |Ti<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
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| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |TiN<br />
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29 R3]<br />
|<br><br />
|R1<br />
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|<br><br />
|[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
|<br><br />
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! bgcolor="#d0e7ff" align="center" |TiW<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
| bgcolor="#eeffff" |<br><br />
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| bgcolor="#eeffff" |[[Sputtering Recipes|R2]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub><br />
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| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
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| bgcolor="#eeffff" |[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R5]]<br />
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| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |V<br />
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|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R1]]<br />
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! bgcolor="#d0e7ff" align="center" |W<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Zn<br />
|<br><br />
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|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
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! bgcolor="#d0e7ff" align="center" |ZnO<br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R3]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Zr<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R1]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes#Sputter_3_.28ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes|Sputter 5 (ATC 2200-V)]]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAl)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|}<br />
<br />
===Process Ranking Table===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
|'''Process Level'''<br />
| colspan="11" |'''Description of Process Level Ranking'''<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been ran at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been ran and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been ran, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-Situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-Situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts/limits available<br />
|}<br />
[[Category:Processing]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Vacuum_Deposition_Recipes&diff=162273
Vacuum Deposition Recipes
2024-08-19T18:10:17Z
<p>Thibeault: /* Deposition Tools/Materials Table */</p>
<hr />
<div>===[[Process Group - Process Control Data#Deposition .28Process Control Data.29|<u>Process Control Data</u>]]===<br />
<small>''See [[Process Group - Process Control Data#Deposition .28Process Control Data.29|linked page]] for process control data (calibration data over time, such as dep. rate, refractive index, stress etc.) over time, for a selection of highly used tools/films.''</small><br />
<br />
===Deposition Tools/Materials Table===<br />
''The Key/Legend for this table's <code>A...R6</code> values is at the [[Vacuum Deposition Recipes#Process Ranking Table|<u>bottom of the page</u>]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- bgcolor="#d0e7ff"<br />
! colspan="16" width="1675" height="45" |<div style="font-size: 150%;">Vacuum Deposition Recipes</div><br />
|- bgcolor="#d0e7ff"<br />
|<!-- INTENTIONALLY LEFT BLANK --><br><br />
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[E-Beam Evaporation Recipes|E-Beam Evaporation]]'''<br />
! colspan="4" |'''[[Sputtering Recipes|Sputtering]]'''<br />
! colspan="2" bgcolor="#d0e7ff" align="center" |'''[[Thermal Evaporation Recipes|Thermal Evaporation]]'''<br />
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[PECVD Recipes|Plasma Enhanced Chemical<br>Vapor Deposition (PECVD)]]'''<br />
! width="90" bgcolor="#d0e7ff" align="center" |'''[[Atomic Layer Deposition Recipes|Atomic Layer Deposition]]'''<br />
! width="80" bgcolor="#d0e7ff" align="center" |'''[[Molecular Vapor Deposition Recipes|Molecular Vapor Deposition]]'''<br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(AJA ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(AJA ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_5_.28AJA_ATC_2200-V.29 Sputter 5 (AJA ATC 2200-V)]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAL)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ag<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Al<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R3]]<br />
|[[Sputtering Recipes|R1]]<br />
|R1<br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
|<br><br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub><br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R5]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Al2O3 deposition .28ALD CHAMBER 3.29|R4]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
!AuGe<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
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|[[Sputtering Recipes|R1]]<br />
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|R1<br />
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|[[Atomic Layer Deposition Recipes#AlN deposition .28ALD CHAMBER 3.29|R4]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Au<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |R3<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
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! bgcolor="#d0e7ff" align="center" |C<br />
| bgcolor="#eeffff" align="center" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R3]]<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
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| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
| bgcolor="#eeffff" align="center" |<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |CeO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Co<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Cr<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
|<br><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29 R3]<br />
|<br><br />
|<br>{{Rl|Sputtering_Recipes|Sputter_5_.28AJA_ATC_2200-V.29|R3}}<br />
|<br><br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Cu<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R2]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Fe<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|[[Sputtering Recipes|R3]]<br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Ge<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |GeO<sub>2</sub><br />
|<br />
|[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
|<br />
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! bgcolor="#d0e7ff" align="center" |Gd<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R1]]<br />
| bgcolor="#eeffff" |<br><br />
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| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Hf<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br>[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R1]]<br />
| bgcolor="#eeffff" |<br><br />
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| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub><br />
|<br><br />
|<br><br />
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|<br><br />
|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R1]]<br />
|<br><br />
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|[[Atomic Layer Deposition Recipes#AlN deposition .28ALD CHAMBER 3.29|R4]]<br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |In<br />
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| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
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| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ir<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
|<br><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R1]]<br />
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! bgcolor="#d0e7ff" align="center" |ITO<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |R1<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |MgF2<br />
|<br />
|<br />
|<br />
|<br />
|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R1]]<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |MgO<br />
|<br />
|[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
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|<br />
|<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Mo<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Nb<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Sputtering Recipes|R3]]<br />
|<br><br />
|<br><br />
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|-<br />
! bgcolor="#d0e7ff" align="center" |Nd<br />
|<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Sputtering Recipes|R1]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ni<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |NiCr<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br />
|<br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |NiFe<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Pd<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Pt<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bcolor="EEFFFF" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ru<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|<br><br />
|[[Sputtering Recipes#Ru Deposition .28Sputter 4.29|R3]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Si<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |R1<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[https://wiki.nanotech.ucsb.edu/w/index.php?title=PECVD_Recipes#Amorphous-Si_deposition_.28PECVD_.232.29 R3]<br />
| bgcolor="#eeffff" |<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SiN<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Sputtering Recipes|R3]]<br />
|[[Sputtering Recipes|R1]]<br />
|<br><br />
|[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R6]]<br />
|<br><br />
|<br><br />
|[[PECVD Recipes#SiN deposition .28PECVD .231.29|R6]]<br />
|[[PECVD Recipes#SiN deposition .28PECVD .232.29|R6]]<br />
|[[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|R6]]<br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SiN - Low Stress<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|[[PECVD Recipes#Low Stress Si3N4 .28PECVD.231.29|R4]]<br />
|[[PECVD Recipes#Low-Stress SiN deposition .28PECVD .232.29|R6]]<br />
|[[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|R6]]<br />
|<br />
|<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering_Recipes#SiO2_deposition_.28IBD.29|R6]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[PECVD Recipes#SiO2 deposition .28PECVD .231.29|R6]]<br />
| bgcolor="#eeffff" |[[PECVD Recipes#SiO2 deposition .28PECVD .232.29|R6]]<br />
| bgcolor="#eeffff" |[[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|R6]]<br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
!SiO<sub>x</sub><br />
|<br />
|[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R1]]<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SiO<sub>x</sub>N<sub>y</sub><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R3]]<br />
|<br><br />
|<br><br />
|[[PECVD Recipes#SiO2 deposition .28PECVD .231.29|R4]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Sn<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Thermal Evaporation Recipes|A]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |SrF<sub>2</sub><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ta<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |R1<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R1]]<br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R1]]<br />
|<br><br />
|<br><br />
|<br><br />
|[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R6]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Ti<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 3 .28Temescal.29|R2]]<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |R1<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |TiN<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[https://wiki.nanotech.ucsb.edu/w/index.php?title=Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29 R3]<br />
|<br><br />
|R1<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |TiW<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R1]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 2 .28Custom.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R1]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes#Si3N4 deposition .28IBD.29|R5]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |V<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R1]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |W<br />
| bgcolor="#eeffff" |[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R2]]<br />
| bgcolor="#eeffff" |[[Sputtering Recipes|R3]]<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Zn<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|[[Thermal Evaporation Recipes|A]]<br />
|[[Thermal Evaporation Recipes|A]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |ZnO<br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R3]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |Zr<br />
|[[E-Beam Evaporation Recipes#E-Beam 1 .28Sharon.29|R2]]<br />
|<br><br />
|<br><br />
|[[E-Beam Evaporation Recipes#E-Beam 4 .28CHA.29|R2]]<br />
|[[Sputtering Recipes|R1]]<br />
|[[Sputtering Recipes|R1]]<br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|<br><br />
|-<br />
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |<br><br />
| bgcolor="#eeffff" |[[Atomic Layer Deposition Recipes#Pt deposition .28ALD CHAMBER 1.29|R4]]<br />
| bgcolor="#eeffff" |<br><br />
|-<br />
! width="20" bgcolor="#d0e7ff" align="center" |'''Material'''<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_1_.28Sharon.29|E-Beam 1 (Sharon)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_2_.28Custom.29|E-Beam 2 (Custom)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_3_.28Temescal.29|E-Beam 3 (Temescal)]]<br />
| width="65" bgcolor="#daf1ff" |[[E-Beam Evaporation Recipes#E-Beam_4_.28CHA.29|E-Beam 4 (CHA)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes#Sputter_3_.28ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering_Recipes#Sputter_4_.28AJA_ATC_2200-V.29|Sputter 4<br>(ATC 2200-V)]]<br />
| width="65" bgcolor="#daf1ff" |[[Sputtering Recipes|Sputter 5 (ATC 2200-V)]]<br />
| width="55" bgcolor="#daf1ff" |[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Ion Beam<br>Deposition (Veeco Nexus)]]<br />
| width="45" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_1|Thermal<br>Evap 1]]<br />
| width="65" bgcolor="#daf1ff" |[[Thermal Evaporation Recipes#Thermal_Evap_2_.28Solder.29|Thermal Evap 2 (Solder)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_1_.28PlasmaTherm_790.29|PECVD 1<br>(PlasmaTherm 790)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD Recipes#PECVD_2_.28Advanced_Vacuum.29|PECVD 2<br>(Advanced Vacuum)]]<br />
| width="65" bgcolor="#daf1ff" |[[PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29|Unaxis VLR ICP-PECVD]]<br />
| width="65" bgcolor="#daf1ff" |[[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition (Oxford FlexAl)]]<br />
| width="65" bgcolor="#daf1ff" |[[Molecular Vapor Deposition|Molecular Vapor Deposition (Tool)]]<br />
|}<br />
<br />
===Process Ranking Table===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
|'''Process Level'''<br />
| colspan="11" |'''Description of Process Level Ranking'''<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been ran at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been ran and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been ran, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-Situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-Situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts/limits available<br />
|}<br />
[[Category:Processing]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&diff=162272
Sputtering Recipes
2024-08-19T18:05:52Z
<p>Thibeault: /* Materials Table (Sputter 5) */</p>
<hr />
<div>{{recipes|Vacuum Deposition}}<br />
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}<br />
<br />
==[[Sputter 3 (AJA ATC 2000-F)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.<br />
<br />
===Tips & Tricks===<br />
<br />
====Ignition Issues====<br />
It is somewhat common that you might have a plasma ignition failure at some point. Common remedies for this are to increase the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition step pressure to 10mTorr or 30mT, then during deposition decrease the pressure to 3mTorr and the plasma will stay lit.<br />
<br />
===Materials Table (Sputter 3)===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm<br />
!Target Consumed Lower Limit!!Data Below!!Comment<br />
|-<br />
|Au<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
| -<br />
|Set: 200 W<br />
Read: 400 VDC<br />
|no<br />
|<br />
|-<br />
|Al2O3<br />
|3<br />
|200 (RF2)<br />
|off<br />
|20<br />
|30<br />
|<br />
|1.5<br />
|1.52"-4mm<br />
|5.32<br />
|<br />
|<br />
|1.6478<br />
|0<br />
|<br />
|no<br />
|Demis D. John<br />
|-<br />
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-<br />
| ||yes||Alex K<br />
|-<br />
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-<br />
| ||no||Brian<br />
|-<br />
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-<br />
| ||No||Alex K<br />
|-<br />
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-<br />
| ||no||Ning<br />
|-<br />
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-<br />
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer<br />
|-<br />
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-<br />
| ||yes||Brian<br />
|-<br />
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-<br />
| ||yes||Brian<br />
|-<br />
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-<br />
| ||yes||Brian<br />
|-<br />
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-<br />
| ||yes||Ning<br />
|-<br />
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-<br />
| ||yes||150Volts 5 min<br />
|-<br />
|}<br />
<br />
===Height Conversion for Older Recipes===<br />
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:<br />
{| class="wikitable"<br />
!Old (mm)<br />
!New (inches)<br />
!Typical Gun Tilt (mm)<br />
|-<br />
|15<br />
|<br />
|<br />
|-<br />
|25<br />
|0.82<br />
|9<br />
|-<br />
|44<br />
|1.52<br />
|4<br />
|}<br />
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]<br />
<br />
===Fe and Co Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]<br />
<br />
===Cu Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]<br />
<br />
===Mo Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]<br />
<br />
===Ni and Ta Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]<br />
<br />
===SiO2 Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]<br />
<br />
===SiN Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]<br />
<br />
===Ti Deposition (Sputter 3)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]<br />
<br />
==[[Sputter 4 (AJA ATC 2200-V)]]==<br />
<br />
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.<br />
<br />
===Materials Table (Sputter 4)===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. <br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment<br />
|-<br />
|Al||5<br />
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Al2O3<br />
|3<br />
|RF4-Sw1<br />
|200<br />
|0<br />
|20<br />
|30<br />
|0<br />
|1.5<br />
|H2.75-T5<br />
|5.1<br />
|<br />
|<br />
|1.64202<br />
|0<br />
|partial<br />
|Demis D. John<br />
|-<br />
|Au||5<br />
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Au||10<br />
| ||200||0||20||45||0||0||H2.75-T5||35.5||-||-||-||-||Yes||Demis: 200W rate (Max for Au) 2022-08-03<br />
|-<br />
|Cu<br />
|5<br />
|<br />
|150<br />
|0<br />
|20<br />
|30<br />
|0<br />
|0<br />
|H0.82-T9<br />
|6.7<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning Cao<br />
|-<br />
|Nb||4<br />
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||<br />
|-<br />
|Pt||5<br />
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Pt||3<br />
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|Ru<br />
|3<br />
|<br />
|200<br />
|<br />
|<br />
|45<br />
|<br />
|<br />
|H2.75-T4<br />
|~10<br />
|<br />
|<br />
|<br />
|<br />
|Yes<br />
|Ning Cao<br />
|-<br />
|Ti||10<br />
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiN||3<br />
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||<br />
|-<br />
|TiO<sub>2</sub>||3<br />
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao<br />
|-<br />
|TiW||4.5<br />
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt<br />
|-<br />
|W||3<br />
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher<br />
|-<br />
<br />
|}<br />
<br />
===Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]<br />
<br />
===Al Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]<br />
<br />
===Al2O3 Deposition (Sputter 4)===<br />
<br />
*Rate: 5.134 nm/min<br />
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)<br />
**A = 1.626<br />
**B = 5.980E-3<br />
**C = 1.622E-4<br />
<br />
===Pt Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]<br />
<br />
===Ru Deposition (Sputter 4)===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao<br />
**Deposition Rate ~10nm/min<br />
**See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.<br />
<br />
===Ti-Au Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]<br />
<br />
===TiO<sub>2</sub> Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]<br />
<br />
===TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]<br />
<br />
===W-TiW Deposition (Sputter 4)===<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]<br />
<br />
==[[Sputter 5 (AJA ATC 2200-V)]]==<br />
<br />
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.<br />
<br />
===Materials Table (Sputter 5)===<br />
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.<br />
{| class="wikitable sortable"<br />
|-<br />
!Material!!P(mT)<br />
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment<br />
|-<br />
|Al<br />
|5<br />
|<br />
|250<br />
|0<br />
|20<br />
|45<br />
|0<br />
|0<br />
|H1-T10<br />
|2.5<br />
|22<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No (SEM available)<br />
|Ning<br />
|-<br />
|Al2O3<br />
|1.5<br />
|DC5-SW1<br />
|150<br />
| -<br />
| -<br />
|45<br />
| -<br />
|5<br />
|H2.75-T5<br />
|5.3<br />
|?<br />
|?<br />
|?<br />
|1.641<br />
| -<br />
|?<br />
|No<br />
|Demis 2018-04-13<br />
|-<br />
|Cr<br />
|5.0<br />
|RF<br />
|200<br />
|~345<br />
|20<br />
|45<br />
|<br />
|<br />
|H2.75-T5<br />
|4.47<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|No<br />
|BT 2024-07-02<br />
|-<br />
|Pt<br />
|3.0<br />
|<br />
|200(507v)<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|7.03<br />
|?<br />
|?<br />
|?<br />
|2.068<br />
|4.951<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana<br />
|-<br />
|SiO2||3<br />
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana<br />
|-<br />
|Ti<br />
|3.0<br />
|<br />
|200(374v)<br />
| -<br />
| -<br />
|45<br />
| -<br />
| -<br />
|H1-T10<br />
|2.52<br />
|?<br />
|?<br />
|?<br />
|2.679<br />
|1.853<br />
|?<br />
|No<br />
|Ning 2021-09-27<br />
|}<br />
''*LPD: light particle detection:''<br />
<br />
*''LPDb: light particle detection before deposition''<br />
*''LPDa: light particle detection after deposition''<br />
<br />
===SiO2 Deposition (Sputter 5)===<br />
<br />
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]<br />
<br />
=[[Ion Beam Deposition (Veeco NEXUS)]]=<br />
''Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.''<br />
<br />
*[[IBD: Calibrating Optical Thickness|Method to calibrate multi-layer optical films]]: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc.<br />
<br />
===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Process Control Plots] - ''Plots of all process control data.''===<br />
<br />
==SiO<sub>2</sub> deposition (IBD)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_SiO2_dep''"<br />
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Process Control Data</nowiki>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28IBD.29 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] - Before Oct. 2021<br />
<br />
====SiO<sub>2</sub> Thin-Film Properties (IBD)====<br />
<br />
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)<br />
*HF Etch Rate ~350 nm/min<br />
*Stress ≈ -390MPa (compressive)<br />
*Refractive Index: ≈ 1.494<br />
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):<br />
**A = 1.480<br />
**B = 0.00498<br />
**C = -3.2606e-5<br />
<br />
====SiO<sub>2</sub> Uniformity====<br />
''Measured in June 2010 (Demis D. John)''<br />
{| class="wikitable"<br />
|+Uniformity Statistics<br />
!<br />
!Thickness (nm)<br />
!Refractive Index<br />
(at 632nm)<br />
|-<br />
|Mean (Avg.), nm<br />
|1677.80<br />
|1.480<br />
|-<br />
|Min<br />
|1671.09<br />
|1.479<br />
|-<br />
|Max<br />
|1688.9<br />
|1.482<br />
|-<br />
|Std. Deviation (nm)<br />
|5.99<br />
|8.6e-4<br />
|}<br />
[[File:IBD - Deposition Uniformity across a 6-inch wafer 2010-06-15 v2.png|alt=Plot of SiO2 thickness and refractive index|none|thumb|Plot of SiO2 thickness and refractive index measured across 6-inch wafer, measured with ellipsometry. ''Credit: Demis D. John, 2010-06-15'']]<br />
<br /><br />
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Si3N4_Dep''"<br />
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Process Control Data</nowiki>]<br />
<br />
===Si<sub>3</sub>N<sub>4</sub> Thin-Film Properties (IBD)===<br />
<br />
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)<br />
*HF Etch Rate: ~11nm/min<br />
*Stress ≈ -1590MPa (compressive)<br />
*Refractive Index: ≈ 1.969<br />
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):<br />
**A = 2.000<br />
**B = 0.01974<br />
**C = 1.2478e-4<br />
<br />
==Ta<sub>2</sub>O<sub>5</sub> deposition (IBD)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Ta2O5_dep''"<br />
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Process Control Data</nowiki>]<br />
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Ta2O5_deposition_.28IBD.29 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021<br />
<br />
====Ta2O5 Thin-Film Properies (IBD)====<br />
<br />
*Ta2O5 1hr depositions:<br />
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)<br />
*HF Etch Rate ≈ 2 nm/min<br />
*Stress ≈ -232MPa (compressive)<br />
*Refractive Index: ≈ 2.172<br />
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):<br />
**A = 2.1123<br />
**B = 0.018901<br />
**C = -0.016222<br />
<br />
==Al<sub>2</sub>O<sub>3</sub> deposition (IBD)==<br />
<br />
*Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe - "''1_Al2O3_dep''"<br />
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Process Control Data</nowiki>]<br />
<br />
===Al2O3 Thin-Film Properties (IBD)===<br />
<br />
*Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ≈ 167nm/min<br />
*Stress ≈ -332MPa (compressive)<br />
*Refractive Index: ≈ 1.656<br />
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):<br />
**A = ''To Be Added''<br />
**B =<br />
**C =<br />
*Absorbing < ~350nm<br />
<br />
==TiO<sub>2</sub> deposition (IBD)==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_TiO2_dep''"<br />
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Process Control Data</nowiki>]<br />
<br />
===TiO<sub>2</sub> Thin-Film Properties (IBD)===<br />
<br />
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)<br />
*HF etch rate ~5.34nm/min<br />
*Stress ≈ -445MPa (compressive)<br />
*Refractive Index: ≈ 2.259<br />
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):<br />
**A = 2.435<br />
**B = -4.9045e-4<br />
**C = 0.01309<br />
*Absorbing < ~350nm wavelength<br />
<br />
==SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)==<br />
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by [[Demis D. John|Demis D. John]], 2010.<br />
{|<br />
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]<br />
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]<br />
|}<br />
<br />
==Standard Cleaning Procedure (IBD)==<br />
You must edit the "''#_GridClean''"("#" is your group number) steps in your Process according to the following times:<br />
<br />
*5min GridClean for 1hr or less deposition<br />
*10min GridClean for up to 2hrs of dep.<br />
*Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "''1_SiO2_Dep_Multi''" for an example.<br />
<br />
===Standard Grid-Clean Recipe===<br />
''[[To Be Added]]''<br />
<br />
==Reference Recipes (Disabled Tools)==<br />
<br />
===[[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]]===<br />
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''<br />
'''Al Deposition (Sputter 2)'''<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]<br />
<br />
'''AlN<sub>x</sub> Deposition (Sputter 2)'''<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]<br />
<br />
'''Au Deposition (Sputter 2)'''<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]<br />
<br />
'''TiO<sub>2</sub> Deposition (Sputter 2)'''<br />
<br />
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=162266
Lithography Recipes
2024-08-15T21:33:46Z
<p>Thibeault: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=162265
Lithography Recipes
2024-08-15T21:32:42Z
<p>Thibeault: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R3}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R2}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=162264
Lithography Recipes
2024-08-15T21:28:41Z
<p>Thibeault: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R3}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R3}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R2}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R3}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6|R3}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304|R3}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=162263
Lithography Recipes
2024-08-15T21:18:39Z
<p>Thibeault: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R3}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R3}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R3}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Rl/doc&diff=162262
Template:Rl/doc
2024-08-15T21:14:17Z
<p>Thibeault: </p>
<hr />
<div>The Recipe Link "rl" template is used on the Tables of recipes, such as the [[Dry_Etching_Recipes|Dry Etching Recipes page]]. We use this to show that a recipe is available for some material, and also link to the page/section with that recipe.<br />
<br />
It will display as a default, if no recipe level is indicated, the text "R1" and allows you to link to a subheading on a page (eg. one of the links in the table of contents on a page). The resulting URL will jump to that position on the web page.<br />
<br />
If you want to display a different Recipe maturity level, you can specify this using the third argument of the function as indicated below.<br />
<br />
=== Arguments ===<br />
<br />
This template (rl = Recipe Link) takes 3 arguments.<br />
<br />
*the first argument is the name of the main page.<br />
*the second argument is the subheading that you want to link to.<br />
*the third argument is the recipe maturity level. R1 through R6, as defined by the recipe maturity table definitions<br />
<br />
=== Example ===<br />
<br />
To declare a recipe maturity level of R2 and link to the section "''Al Etch (Panasonic 1)''" on the ''[[ICP_Etching_Recipes | ICP Etching Recipes]]'' page, you would write the template like so:<br />
<br />
<pre><br />
{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R2}}<br />
</pre><br />
<br />
This will display as so:<br />
<br />
{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R2}}</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Rl&diff=162261
Template:Rl
2024-08-15T21:13:30Z
<p>Thibeault: </p>
<hr />
<div><includeonly>[[{{{1}}}#{{{2}}}{{!}}{{{3|R1}}}]]</includeonly><noinclude>[[Category:Templates]]{{Documentation}}</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Rl/doc&diff=162252
Template:Rl/doc
2024-08-15T00:58:20Z
<p>Thibeault: </p>
<hr />
<div>The Recipe Link "rl" template is used on the Tables of recipes, such as the [[Dry_Etching_Recipes|Dry Etching Recipes page]]. We use this to show that a recipe is available for some material, and also link to the page/section with that recipe.<br />
<br />
It will display as a default, if no recipe level is indicated, the text "R" and allows you to link to a subheading on a page (eg. one of the links in the table of contents on a page). The resulting URL will jump to that position on the web page.<br />
<br />
If you want to display a different Recipe maturity level, you can specify this using the third argument of the function as indicated below.<br />
<br />
=== Arguments ===<br />
<br />
This template (rl = Recipe Link) takes 3 arguments.<br />
<br />
*the first argument is the name of the main page.<br />
*the second argument is the subheading that you want to link to.<br />
*the third argument is the recipe maturity level. R1 through R6, as defined by the recipe maturity table definitions<br />
<br />
=== Example ===<br />
<br />
To declare a recipe maturity level of R2 and link to the section "''Al Etch (Panasonic 1)''" on the ''[[ICP_Etching_Recipes | ICP Etching Recipes]]'' page, you would write the template like so:<br />
<br />
<pre><br />
{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R2}}<br />
</pre><br />
<br />
This will display as so:<br />
<br />
{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R2}}</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=162251
Lithography Recipes
2024-08-15T00:54:33Z
<p>Thibeault: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=162250
Lithography Recipes
2024-08-15T00:51:53Z
<p>Thibeault: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
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<p>Thibeault: /* Photolithography Recipes */</p>
<hr />
<div>__NOTOC__<br />
{| class="wikitable"<br />
|+<br />
!Table of Contents<br />
|-<br />
|<br />
==='''<big>Photolithography Processes</big>'''===<br />
<br />
#'''UV Optical Lithography''' <br />
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]<br />
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''<br />
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]<br />
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''<br />
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''<br />
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]<br />
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]<br />
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]<br />
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]<br />
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)<br />
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)<br />
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]<br />
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]<br />
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]<br />
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]<br />
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]<br />
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]<br />
#*''Techniques for improving litho. or solving common photolith. problems.''<br />
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''<br />
#*''Verified Recipes for lift-off using various photolith. tools''<br />
#*''General educational description of this technique and it's limitations/considerations.''<br />
#'''E-beam Lithography'''<br />
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]<br />
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''<br />
#*[[#EBLPR |EBL Photoresist Datasheets]]<br />
#**''Provided for reference, also showing starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''<br />
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''<br />
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''<br />
#*''Datasheets are provided with starting recipes and usage info.''<br />
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''<br />
#*''Edge photoresist removal methods needed for clamp-based etchers''<br />
#*''Improves resolution for contact lithography''<br />
|-<br />
|<br />
<br />
==='''<big>Photolithography Chemicals/Materials</big>'''===<br />
<br />
#'''[[#Underlayers |Underlayers]]'''<br />
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''<br />
#*''Datasheets are provided.''<br />
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': <br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''<br />
#*''Datasheets are provided for reference on use of the materials.''<br />
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''<br />
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.<br />
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''<br />
#*''Datasheets provided with usage info.''<br />
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''<br />
#*''These are used to improve wetting of photoresists to your substrate.''<br />
#*''Datasheets are provided on use of these materials.''<br />
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' <br />
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] <br />
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''<br />
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]<br />
#**''Recipes for usage of some spin-on dielectrics.''<br />
#'''[[#Developers |Developers and Removers]]'''<br />
#*''Datasheets provided for reference.''<br />
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''<br />
|}<br />
<br />
==General Photolithography Techniques==<br />
<br />
====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====<br />
<br />
*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''<br />
<br />
====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====<br />
<br />
*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''<br />
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''<br />
<br />
====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====<br />
<br />
*''To create slanted sidewalls or curved surfaces.''<br />
<br />
==Photolithography Recipes==<br />
<br />
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small><br />
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small><br />
<br />
==='''Process Ranking Table'''===<br />
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:<br />
{| class="wikitable"<br />
!Process Level<br />
! colspan="11" |Description of Process Level Ranking<br />
|-<br />
|A<br />
| colspan="11" |Process '''A'''llowed and materials available but never done<br />
|-<br />
|R1<br />
| colspan="11" |Process has been run at least once<br />
|-<br />
|R2<br />
| colspan="11" |Process has been run and/or procedure is documented or/and data available<br />
|-<br />
|R3<br />
| colspan="11" |Process has been run, procedure is documented, and data is available<br />
|-<br />
|R4<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available<br />
|-<br />
|R5<br />
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available<br />
|-<br />
|R6<br />
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available<br />
|}<br />
<br />
''Click the tool title to go to recipes for that tool.'' <br />
<br />
''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''<br />
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"<br />
|- <br />
! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div><br />
<br />
|- <br />
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --><br />
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''<br />
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''<br />
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' <br />
{{LithRecipe Table}}<br />
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --><br />
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<!-- This is a White row color --><br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA_Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Positive Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5]<br />
|<br />
|<br />
|<br />
|<br />
|A<br />
|<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' <br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020]<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035]<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |A<br />
| bgcolor="EEFFFF" |<br />
| bgcolor="EEFFFF" |A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|A<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510]<br />
|A<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)}}<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015]<br />
|A<br />
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075]<br />
|A<br />
|A<br />
|A<br />
|A<br />
|<br />
|{{rl|MLA Recipes|Negative Resist (MLA 150)}}<br />
|- <br />
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
|A<br />
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''<br />
{{LithRecipe Table}}<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]<br />
|<br />
|<br />
|A<br />
|A<br />
|<br />
|A<br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DUV-42P-6}}<br />
|<br />
|<br />
|-<br />
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]<br />
|<br />
|<br />
|<br />
|<br />
|{{rl|Stepper Recipes|DS-K101-304}}<br />
|<br />
|-<br />
! bgcolor="#D0E7FF" align="center" |<br />
{{LithRecipe Table}}<br />
|}<br />
<!-- end Litho Recipes table --><br />
<br />
==Lift-Off Recipes==<br />
<br />
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}<br />
**How it works, process limits and considerations for designing your process<br />
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]<br />
**''Single Expose/Develop process for simplicity''<br />
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''<br />
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''<br />
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''<br />
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''<br />
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]<br />
**''Single-expose/develop process''<br />
**''Up to ~65nm metal thickness & ~350nm gap between metal''<br />
**''Use thicker PMGI for thicker metals''<br />
<br />
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==<br />
<br />
*Under Development.<br />
<br />
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==<br />
''To Be Added''<br />
<br />
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]==<br />
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.<br />
<br />
===Available Variations===<br />
<br />
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.<br />
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.<br />
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).<br />
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".<br />
<br />
===Recipes Table (S-Cubed Flexi)===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''''<u>Coating Material</u>'''''<br />
|'''''<u>Route/Chain</u>'''''<br />
|'''''<u>Name</u>''': (User: "UCSB Users")''<br />
|'''''<u>Spin Speed (krpm)</u>'''''<br />
|'''''<u>Bake Temp</u>'''''<br />
|'''''<u>Notes</u>'''''<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''Hotplate Set'''''<br />
|Route<br />
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).<br />
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C<br />
|-<br />
|<br />
|<br />
|HP4-SET-220C<br />
|<br />
|220°C<br />
|Will over shoot +-2°C when done.<br />
|-<br />
|<br />
|<br />
|HP4-SET-210C<br />
|<br />
|210°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-200C<br />
|<br />
|200°C<br />
|<br />
|-<br />
|<br />
|<br />
|HP4-SET-185C<br />
|<br />
|185°C<br />
|<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''<br />
|Route<br />
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''<br />
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]<br />
<br />
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''<br />
|-<br />
|1.5krpm recipes<br />
|<br />
|COAT-DSK101-304[1.5K]-185C<br />
|1.5krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-200C<br />
|1.5krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-210C<br />
|1.5krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[1.5K]-220C<br />
|1.5krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm recipes<br />
|<br />
|COAT-DSK101-304[5K]-185C<br />
|5.0krpm<br />
|185°C<br />
|Requires: HP4=185°C,<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-200C<br />
|5.0krpm<br />
|200°C<br />
|Requires: HP4=200°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-210C<br />
|5.0krpm<br />
|210°C<br />
|Requires: HP4=210°C<br />
|-<br />
|<br />
|<br />
|COAT-DSK101-304[5K]-220C<br />
|5.0krpm<br />
|220°C<br />
|Requires: HP4=220°C,<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''<br />
|Route<br />
|COAT-UV6[2K]-135C<br />
|2.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|varying spin speed<br />
|<br />
|COAT-UV6[2.5K]-135C<br />
|2.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3K]-135C<br />
|3.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[4K]-135C<br />
|4.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[5K]-135C<br />
|5.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|COAT-UV6[6K]-135C<br />
|6.0krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''<br />
|-<br />
|'''''DS-K101 @ 185°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 185°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=185°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-185C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''<br />
|-<br />
|'''''DS-K101 @ 220°C'''''<br />
'''''+ UV6'''''<br />
|Chain<br />
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.0krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|1.5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[4K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[5K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[1.5K]-220C-UV6[6K]-135C<br />
|DSK: 1.5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|5krpm DSK recipes with<br />
UV6- various spin speeds<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[2.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 2.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[4K]-135C<br />
|DSK: 5krpm<br />
UV6: 4.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[5K]-135C<br />
|DSK: 5krpm<br />
UV6: 5.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|COAT-DSK101[5K]-220C-UV6[6K]-135C<br />
|DSK: 5krpm<br />
UV6: 6.0krpm<br />
|same as above<br />
|same as above<br />
|-<br />
! colspan="6" |<br />
|-<br />
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)<br />
|-<br />
! colspan="6" |<br />
|-<br />
|'''''PEB Wafer Bake'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S<br />
|<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''''PEB and Developing'''''<br />
|Route<br />
| colspan="4" |To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
| colspan="6" |<br />
|-<br />
|'''Developing'''<br />
|Route<br />
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec<br />
<br />
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE<br />
|-<br />
|Varying developer time<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-10S<br />
|Developer chuck: 300rpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-15S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|DEV[MIF300]-SPIN[300RPM]-20S<br />
|same as above<br />
|same as above<br />
|same as above<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==<br />
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''<br />
<br />
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}<br />
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}<br />
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}<br />
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}}<br />
<br />
==Low-K Spin-On Dielectric Recipes==<br />
<br />
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}}<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}}<br />
<br />
==Chemicals Stocked + Datasheets==<br />
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.''<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
;<div id="PositivePR"><big>Positive Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
*THMR-3600HP (Thin I-Line & Holography)<br />
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}}<br />
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}}<br />
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}<br />
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}<br />
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}}<br />
<br />
;<div id="NegativePR"><big>Negative Photoresists</big></div><br />
<br />
'''''i-line and broadband'''''<br />
<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}<br />
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}<br />
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}}<br />
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}<br />
<br />
'''''DUV-248nm'''''<br />
<br />
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}}<br />
<br />
;<div id="Underlayers"><big>Underlayers</big></div><br />
<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
<br />
;<div id="EBLPR"><big>E-beam resists</big></div><br />
<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
<br />
;<div id="NanoImprinting"><big>Nanoimprinting</big></div><br />
<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}}<br />
*{{fl|OrmoStamp-NIL-Lithography-UV-Soft-RevA.pdf|Ormostamp}}<br />
<br />
|<br />
;<div id="ContrastEnhancement"><big>Contrast Enhancement Materials</big></div><br />
<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
<br />
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div><br />
<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}<br />
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}<br />
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}<br />
<br />
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div><br />
<br />
*HMDS<br />
*AP3000 BCB Adhesion Promoter<br />
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}}<br />
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}}<br />
<br />
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div><br />
<br />
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass''<br />
<br />
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}<br />
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}<br />
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}<br />
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}<br />
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}<br />
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}<br />
<br />
;<div id="Developers"><big>Developers</big></div><br />
<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
*DS2100 BCB Developer<br />
*SU-8 Developer<br />
*101A Developer (for DUV Flood Exposed PMGI)<br />
<br />
;<div id="PRRemovers"><big>Photoresist Removers</big></div><br />
<br />
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP]<br />
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}''<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}}<br />
*AZ EBR ("Edge Bead Remover", PGMEA)<br />
<br />
|}<br />
<br />
[[Category: Processing]]<br />
[[category: Lithography]]<br />
[[category: Recipes]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=161517
Template:Announcements
2023-11-16T17:11:33Z
<p>Thibeault: /* PECVD2 is up for SiO2 and Std SiN Only */</p>
<hr />
<div><startfeed /><br />
=====Job Opening: Process Engineer=====<br />
The Nanofab has a current job opening for a Process/Wafer-Fab Engineer, see the [https://wiki.nanofab.ucsb.edu/wiki/Nanofab_Job_Postings NanoFab Job Openings page] for details.<br />
//[[User:Mehalana v|Vraj Mehalana]] 14:52, 30 October 2023 (PDT)<br />
<br />
=====Lab Access Changes: Symmetry App=====<br />
Card/Iris scanner access is still currently enabled. However we will be moving to a smartphone-based access system. '''IMPORTANT''': check your email to setup the new smartphone access system, so you will be ready when we switch to the new system. Look for an email titled '''''"Invitation to Access Symmetry App"'''''.<br />
// [[User:John d|John d]] 13:49, 7 November 2023 (PST)<br />
<br />
=====ProbeStation scheduled IT maintenance=====<br />
The probe station is up, only the computer is down. Standard electrical probe measurements are still available, just not automated plotting<br />
//[[User:Mehalana v|Vraj Mehalana]] 14:29, 3 November 2023 (PDT)<br />
<br />
=====PECVD2 is up for SiO2 and Std SiN Only=====<br />
<br />
We have adjusted recipes for SiO2 and Std SiN. These are available for use. Read the emails first.<br />
Low Stress SiN and a-Si are not yet adjusted and are not ready for use. We hope to have these done the week of 11/20<br />
<br />
[[User:Thibeault|Thibeault]] 09:10, 16 November 2023 (PST)<br />
<br />
=====Wafer Bonder, (Suss SB6-8E)=====<br />
The top heater has failed. We are currently in the process of trying to source a new heater. we will send out an email once I have an update.<br />
<br />
//[[User:Mehalana v|Vraj Mehalana]] 09:59, 20 September 2023 (PDT)<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
In order for your post to show up correctly, you need to:<br />
>> Use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
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<!---------DO NOT EDIT BELOW THIS LINE-----------><br />
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<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
====== HOW TO ADD ITEMS ======<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: [[User:Silva|Silva]] 13:26, 4 February 2023 (PST). Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
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* URL to the RSS feed via FeedBurner (for Samsung display): http://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
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<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// [[User:Silva|Silva]] 13:26, 4 February 2023 (PST)<br />
<br />
************* (end of example) **************<br />
The [[User:Silva|Silva]] 13:26, 4 February 2023 (PST) will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=161516
Template:Announcements
2023-11-16T17:10:17Z
<p>Thibeault: /* PECVD2 is down */</p>
<hr />
<div><startfeed /><br />
=====Job Opening: Process Engineer=====<br />
The Nanofab has a current job opening for a Process/Wafer-Fab Engineer, see the [https://wiki.nanofab.ucsb.edu/wiki/Nanofab_Job_Postings NanoFab Job Openings page] for details.<br />
//[[User:Mehalana v|Vraj Mehalana]] 14:52, 30 October 2023 (PDT)<br />
<br />
=====Lab Access Changes: Symmetry App=====<br />
Card/Iris scanner access is still currently enabled. However we will be moving to a smartphone-based access system. '''IMPORTANT''': check your email to setup the new smartphone access system, so you will be ready when we switch to the new system. Look for an email titled '''''"Invitation to Access Symmetry App"'''''.<br />
// [[User:John d|John d]] 13:49, 7 November 2023 (PST)<br />
<br />
=====ProbeStation scheduled IT maintenance=====<br />
The probe station is up, only the computer is down. Standard electrical probe measurements are still available, just not automated plotting<br />
//[[User:Mehalana v|Vraj Mehalana]] 14:29, 3 November 2023 (PDT)<br />
<br />
=====PECVD2 is up for SiO2 and Std SiN Only=====<br />
Unfortunately PECVD2 is still down.<br />
<br />
We have adjusted recipes for SiO2 and Std SiN. These are available for use. Read the emails first.<br />
Low Stress SiN and a-Si are not yet adjusted and are not ready for use. We hope to have these done the week of 11/20<br />
<br />
[[User:Thibeault|Thibeault]] 09:10, 16 November 2023 (PST)<br />
<br />
=====Wafer Bonder, (Suss SB6-8E)=====<br />
The top heater has failed. We are currently in the process of trying to source a new heater. we will send out an email once I have an update.<br />
<br />
//[[User:Mehalana v|Vraj Mehalana]] 09:59, 20 September 2023 (PDT)<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
In order for your post to show up correctly, you need to:<br />
>> Use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
>> Use two slashes // and FOUR tilde's to insert your signature at the end of your post: //~~~~<br />
--><br />
<!---------DO NOT EDIT BELOW THIS LINE-----------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
====== HOW TO ADD ITEMS ======<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: [[User:Silva|Silva]] 13:26, 4 February 2023 (PST). Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
* URL to the RSS feed directly from Wiki: https://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// [[User:Silva|Silva]] 13:26, 4 February 2023 (PST)<br />
<br />
************* (end of example) **************<br />
The [[User:Silva|Silva]] 13:26, 4 February 2023 (PST) will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Ellipsometer_(Woollam)&diff=161479
Ellipsometer (Woollam)
2023-11-01T19:06:15Z
<p>Thibeault: /* Operating Procedures */ removed link to manual per request by Woollam</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture = Woollam.jpg<br />
|type = Inspection, Test and Characterization<br />
|super = Aidan Hopkins<br />
|super2 = Demis D. John<br />
|location = Hallway (Bay1/Bay2)<br />
|description = Woolam Spectroscopic Ellipsometer<br />
|manufacturer = [http://www.jawoollam.com/ J.A. Woollam Co., Inc.]<br />
|materials = <br />
|model = M-2000DI<br />
}}<br />
__TOC__<br />
==About==<br />
The Woolam M-2000DI Variable Angle Spectroscopic Ellipsometer is used for the general characterization of optical thin films using ellipsometry. <br />
<br />
This tool incorporates a wavelength range from 193nm up to 1650nm and a motorized variable angle control from 45 degrees to 90 degrees in order to provide the widest flexibility for characterization of optical (and some electrical) properties of thin films. The CompletEASE software makes measurement taking and simple analysis very straightforward and provides for complex multi-layer and absorbing film analysis as well. All data is saved for each film so that post-measurement analysis can be performed. This system is also in-situ capable for the ALD system in the facility.<br />
<br />
==Specifications==<br />
<br />
*Film Thickness Range: about 0.5nm to ~10-15µm. (Both of these extremes are difficult but can be measured with some effort.)<br />
*Sample Size: ≥7mm unpatterned thin-film area. Larger wafers possible with limited range of motion.<br />
*Refractive Index (n) / Absorption (k)<br />
*Wavelength range: 193–1650nm (Deuterium + Quartz-Tungsten Halogen Lamps)<br />
*Angles: 45° – 90°<br />
*Models for many materials available, including general-purpose models such as:<br />
**Cauchy (n) with Urbach absorption (k),<br />
**Sellmeier (n),<br />
**B-Spline/Lorentz/Drude for absorbing/metallic films<br />
**General Oscillator for complex refractive index/absorption<br />
**Many "Tabulated" models, where the RIx & Absorption are fixed (not fit), so only Thickness is fit.<br />
<br />
==Operating Procedures==<br />
<br />
*[[Media:Operation Manual of JA Woollam Ellipsometer-a.pdf|Operation procedures for the JA Woollam Ellipsometer]]<br />
**Includes examples of fitting various films, fitting parameters and useful program options.<br />
*[[Ellipsometer (Woollam) - Measuring thin metals with oxide pre-measurement|Method for measuring thin metals, using oxide pre-measurement]]<br />
**Similar to Example B in te above SOP.<br />
*[[Ellipsometer (Woollam) - Measuring thin dielectrics with Native Oxide pre-measurement|Method for measuring thin dielectrics, using native-oxide pre-measurement]]<br />
*Contact us for help fitting difficult films (such as very thin metals etc.)</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Research&diff=160945
Research
2023-02-17T00:49:20Z
<p>Thibeault: /* Sriram Krishnamoorthy Group, PI Prof. Sriram Krishnamoorthy */</p>
<hr />
<div>==Research Groups==<br />
<br />
'''<big>To find the most up-to-date publications and a history of research, please see the group websites below</big>'''<br />
<br />
===[https://nrl.ece.ucsb.edu/ Nanoelectronics Research Lab, PI Prof. Kaustav Banerjee]===<br />
<br />
===[https://ocpi.ece.ucsb.edu Optical Communications and Photonic Integration Group, PI Prof. Daniel Blumenthal]===<br />
===[https://bouwmeestergroup.physics.ucsb.edu Quantum optics and quantum information group, UCSB Physics, PI Prof. Dirk Bouwmeester]===<br />
===[https://iee.ucsb.edu Institute for Energy Efficiency, Director Prof. John Bowers]===<br />
===[https://aim.ucsb.edu AIM Photonics - West Coast, Director Prof. John Bowers]===<br />
===[https://siliconphotonics.ece.ucsb.edu Silicon Photonics Center, PI Prof. John Bowers]===<br />
<br />
===[https://ssleec.ucsb.edu/ Solid State Lighting and Electronic Center, Director Prof. Steven DenBaars, Research Director Prof. Shuji Nakamura]===<br />
===[https://web.ece.ucsb.edu/ipl Integrated Photonics Laboratory, PI Prof. Jonathan Klamkin]===<br />
===[http://web.physics.ucsb.edu/~bmazin/index.html Mazin Laboratory, PI Prof. Ben Mazin]===<br />
===[https://qpl.ece.ucsb.edu Quantum Photonics Laboratory, PI Prof. Galan Moody]===<br />
===[https://web.ece.ucsb.edu/Faculty/rodwell/ High Speed Electronics Group, PI Prof. Mark Rodwell]===<br />
===[https://www.10-9lab.com/ Quantum Sensing and Imaging Group, PI Prof. Ania Jayich]===<br />
===[https://palmstrom.cnsi.ucsb.edu/ Chris Palmstrom Group, PI Prof. Chris Palmstrom]===<br />
<br />
===[https://sites.google.com/view/krishnamoorthygroup/home Krishnamoorthy Research Group, PI Prof. Sriram Krishnamoorthy]===<br />
<br />
===[https://www.afylab.com/ Young Lab, PI Prof. Andrea Young]===<br />
===[https://schuller.cnsi.ucsb.edu/ Schuller Lab, PI Prof. Jon Schuller]===<br />
===[https://schow.ece.ucsb.edu/ Schow Lab, PI Prof. Clint Schow]===<br />
===[https://nanolab.engineering.ucsb.edu/ Pennathur Lab, PI Prof. Sumita Pennathur]===<br />
===[https://stemmer.materials.ucsb.edu/ Stemmer Research Group, PI Prof. Susanne Stemmer]===<br />
===[https://sites.google.com/site/strukov/home Strukov Research Group, PI Prof. Dmitri Strukov]===<br />
===[http://sites.chemengr.ucsb.edu/~mjgordon/research/home.html Gordon Lab, PI Prof. Mike Gordon]===<br />
<br />
==Publication Lists==<br />
<br />
===[[Template:Publications|Select Publications]]===<br />
<br />
*''A selection of recent and relevant publications that utilized the UCSB NanoFab.''<br />
*To see more complete publication lists, please visit group websites linked above<br />
<br />
[[PubList2018|'''2018 Publications''']]<br />
<br />
'''[[Older Publications|Earlier Publications]]'''<br />
<br />
==Research Presentations==<br />
<br />
===[[Photonics Presentations|Photonics]]===<br />
<br />
===[[Electronics Presentations|Electronics]]===<br />
<br />
===[[THz Physics Presentations|THz Physics]]===<br />
<br />
==Pictures==<br />
<br />
===[[Photonics Pictures|Photonics]]===<br />
<br />
===[[Electronics Pictures|Electronics]]===<br />
<br />
===[[MEMS Pictures|MEMS]]===<br />
<br />
===[[Physics Pictures|Physics]]===<br />
<br />
===[[Fluidics Pictures|Fluidics]]===<br />
__FORCETOC__</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Research&diff=160944
Research
2023-02-17T00:48:44Z
<p>Thibeault: /* Research Groups */</p>
<hr />
<div>==Research Groups==<br />
<br />
'''<big>To find the most up-to-date publications and a history of research, please see the group websites below</big>'''<br />
<br />
===[https://nrl.ece.ucsb.edu/ Nanoelectronics Research Lab, PI Prof. Kaustav Banerjee]===<br />
<br />
===[https://ocpi.ece.ucsb.edu Optical Communications and Photonic Integration Group, PI Prof. Daniel Blumenthal]===<br />
===[https://bouwmeestergroup.physics.ucsb.edu Quantum optics and quantum information group, UCSB Physics, PI Prof. Dirk Bouwmeester]===<br />
===[https://iee.ucsb.edu Institute for Energy Efficiency, Director Prof. John Bowers]===<br />
===[https://aim.ucsb.edu AIM Photonics - West Coast, Director Prof. John Bowers]===<br />
===[https://siliconphotonics.ece.ucsb.edu Silicon Photonics Center, PI Prof. John Bowers]===<br />
<br />
===[https://ssleec.ucsb.edu/ Solid State Lighting and Electronic Center, Director Prof. Steven DenBaars, Research Director Prof. Shuji Nakamura]===<br />
===[https://web.ece.ucsb.edu/ipl Integrated Photonics Laboratory, PI Prof. Jonathan Klamkin]===<br />
===[http://web.physics.ucsb.edu/~bmazin/index.html Mazin Laboratory, PI Prof. Ben Mazin]===<br />
===[https://qpl.ece.ucsb.edu Quantum Photonics Laboratory, PI Prof. Galan Moody]===<br />
===[https://web.ece.ucsb.edu/Faculty/rodwell/ High Speed Electronics Group, PI Prof. Mark Rodwell]===<br />
===[https://www.10-9lab.com/ Quantum Sensing and Imaging Group, PI Prof. Ania Jayich]===<br />
===[https://palmstrom.cnsi.ucsb.edu/ Chris Palmstrom Group, PI Prof. Chris Palmstrom]===<br />
<br />
=== [https://sites.google.com/view/krishnamoorthygroup/home Sriram Krishnamoorthy Group, PI Prof. Sriram Krishnamoorthy] ===<br />
<br />
===[https://www.afylab.com/ Young Lab, PI Prof. Andrea Young]===<br />
===[https://schuller.cnsi.ucsb.edu/ Schuller Lab, PI Prof. Jon Schuller]===<br />
===[https://schow.ece.ucsb.edu/ Schow Lab, PI Prof. Clint Schow]===<br />
===[https://nanolab.engineering.ucsb.edu/ Pennathur Lab, PI Prof. Sumita Pennathur]===<br />
===[https://stemmer.materials.ucsb.edu/ Stemmer Research Group, PI Prof. Susanne Stemmer]===<br />
===[https://sites.google.com/site/strukov/home Strukov Research Group, PI Prof. Dmitri Strukov]===<br />
===[http://sites.chemengr.ucsb.edu/~mjgordon/research/home.html Gordon Lab, PI Prof. Mike Gordon]===<br />
<br />
==Publication Lists==<br />
<br />
===[[Template:Publications|Select Publications]]===<br />
<br />
*''A selection of recent and relevant publications that utilized the UCSB NanoFab.''<br />
*To see more complete publication lists, please visit group websites linked above<br />
<br />
[[PubList2018|'''2018 Publications''']]<br />
<br />
'''[[Older Publications|Earlier Publications]]'''<br />
<br />
==Research Presentations==<br />
<br />
===[[Photonics Presentations|Photonics]]===<br />
<br />
===[[Electronics Presentations|Electronics]]===<br />
<br />
===[[THz Physics Presentations|THz Physics]]===<br />
<br />
==Pictures==<br />
<br />
===[[Photonics Pictures|Photonics]]===<br />
<br />
===[[Electronics Pictures|Electronics]]===<br />
<br />
===[[MEMS Pictures|MEMS]]===<br />
<br />
===[[Physics Pictures|Physics]]===<br />
<br />
===[[Fluidics Pictures|Fluidics]]===<br />
__FORCETOC__</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=COVID-19_User_Policies&diff=160938
COVID-19 User Policies
2023-02-13T23:56:08Z
<p>Thibeault: </p>
<hr />
<div>__NOTOC__ <!-- no contents table --><br />
<big>'''The lab is open to all users at this time!'''</big> <br />
<br />
<big>'''Contact the [[Brian Thibeault|Lab Director]] to request access.'''</big><br />
<br />
<br><br />
----<br />
<br />
===Announcements===<br />
<br />
*The facility is following general campus policies.<br />
<br />
----<br />
<br />
=== Current Campus Policies and Updates ===<br />
Please use the link below to review current campus COVID policies.<br />
<br />
https://www.ucsb.edu/COVID-19-information<br />
<br />
===NanoFab Policies (Historical)===<br />
<br />
*'''Masks Optional as of June 13th'''<br />
<br />
::You are '''<u>not</u>''' required to wear a mask in UC buildings at this time. You are also not required to wear a mask in the Nanofab if desired. <br />We will provide masks at the metal table in front of the cleanroom entry.<br />
<br />
::See the [https://t.e2ma.net/webview/be2nag/25634e9f535619ce1f4eb976598e7268 full announcement at this link].<br />
<br />
::Masks (KN95, Surgical) are provided on-site.<br />
<br />
*[//wiki.nanotech.ucsb.edu/w/images/e/ea/User_Protocols_Coronavirus_2020-09-14-1.pdf Full NanoFab COVID-19 Protocols] - '''''Last Updated 2022-03-21'''''<br />
**Contains all additional detailed procedures users must follow, including:<br />
**Late night use<br />
**Masking requirements<br />
**Signed Attestation requirement<br />
**Precious Metals Refill<br />
<br />
===UCSB Policies & Documents===<br />
<br />
*[https://docs.google.com/presentation/d/14udvvXDuKfHozP-5QwUMqGBvXd1W2G5MeYV2zCPHL94/edit '''UCSB Online Safety Presentation'''] - Review this, and return the attestation form stating that you have reviewed it and will comply with policy.<br />
<br />
====UCSB Wellness Survey====<br />
Every day at 3am you will recieve an email with the UCSB Wellness Survey. You must complete this survey ''before'' coming to campus later that day. <br />
<br />
*[https://ucsb.co1.qualtrics.com/jfe/form/SV_blKUu3tXTGswQ1n '''Enroll for the Survey''']<br />
**Contact the [[Brian Thibeault|Lab Director]] if you have issues or need a login.<br />
*Check your email before leaving for campus and fill out the online survey.<br />
**You may only come to campus if you receive a "Clearance" positive response to the survey.<br />
**If you haven't yet recieved the new survey, you can use the old survey in the interim, here: [https://ucsb.co1.qualtrics.com/jfe/form/SV_5BXckLvh0T9tf1z '''Daily Wellness Assessment (old)''']<br />
<br />
====UCSB Flu Vaccination Mandate====<br />
UCSB Students, Staff and Faculty are required to get a Flu vaccine by Nov. 1st to work at a UCSB Facility.<br />
<br />
*Please see the [https://www.ucsb.edu/COVID-19-information/health-wellbeing/flu-vaccination-2020 UCSB Flu Vaccination Mandate] page for details.<br />
*Log your vaccination at the [https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx Electronic Health Record Portal] with your UCSB NetID.<br />
**Choose ''Medical Clearances > 2020-2021 Flu Vaccine Consent: Update''<br />
*[https://www.news.ucsb.edu/2020/020034/flu-clinic-qa Flu Clinic Q&A] explains more about the mandate.<br />
<br />
====UCSB Testing for Staff/Faculty/Students====<br />
Free weekly COVID testing is available to UCSB Staff, Faculty and Students. UCSB employees are <u>strongly urged</u> to sign up for weekly testing, which takes only minutes, is administered on-campus and is free of charge.<br />
<br />
Weekly recurring appointments can be made as follows:<br />
<br />
*Log on to the '''[https://studenthealthoc.sa.ucsb.edu/login_dualauthentication.aspx UCSB Testing Patient Portal]''' using your UCSB NetID and password.<br />
*Select “''Appointments''” and then select “''COVID-19 Services''.”<br />
*Select “''I need to schedule my weekly COVID-19 testing''” and answer the questions.<br />
*Select an available date and time and click “''Continue''.”<br />
*Confirm your appointment date and time and then click “''Schedule''.”<br />
**Note: You must click “''Schedule''” or your appointment will not be confirmed. Also, be sure to add the appointment time and location to your calendar.<br />
<br />
The Chancellor's [https://chancellor.ucsb.edu/memos/2020-10-15-recommended-covid-19-asymptomatic-campus-testing-program-faculty-staff-and memo to campus with details can be found here].<br />
----<br />
<br><br />
====Policy Updates====<br />
<br />
*2021-06-24: Elimination of most protocols (cleaning, face shields etc.). Masking for vaccinated individuals still required.<br />
*2021-05-13: New policies in effect beginning Saturday May 15, 2021<br />
*2020-11-05: We have installed two coat racks in the south side hallway for your use. Please put your jacket, sweater, or hat in the garment bag provided at the racks. The garment bags are long, and you will have to tear at the perforation to remove the bag from the roll. You can either tie the bag to the hanger or use a clip to make the attachment. Spray the bag and surrounding surfaces with 70% ISO once your bag is on the hanger and when you remove your bag from the hanger. You can take the garment bag home with you for re-use but please remember to wipe it down with 70% ISO when you return to ESB. Do not store anything on the upper and lower shelving.<br />
*2020-10-13: UCSB now requires Flu vaccinations by Nov. 1st, for UCSB employees.<br />
*2020-09-14: Bathrooms will be locked. Keys can be found on the self-entry cart. Please make sure the bathrooms lock when you are done.<br />
<br />
<br><br />
----<br />
<br><br><br />
<!-- force TOC at bottom just for hyperlinks--><br />
Link to the above sections:<br />
<br />
__TOC__</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Announcements&diff=160897
Template:Announcements
2023-01-26T01:34:25Z
<p>Thibeault: </p>
<hr />
<div><startfeed /><br />
<!--feedBurner name="UCSBNanofab-Announcements" /--><br />
<!-- Description of the RSS feed --><br />
'''''Important Announcements'''''<br />
----<br />
<!--<br />
SEE THE BOTTOM OF THIS PAGE FOR DETAILED INSTRUCTIONS ON ADDING NEWS ITEMS.<br />
<br />
In order for your post to show up correctly, you need to:<br />
>> Use FIVE equal-signs for the Title's heading level. eg.: ===== my post =====<br />
>> Use two slashes // and FOUR tilde's to insert your signature at the end of your post: //~~~~<br />
--><br />
<!----------------------------------------------><br />
<!------------- Equipment Status ----------------><br />
<br />
===== Dektak XT in qualification =====<br />
We have replaced the Dektak 6M with a new Dektak XT profilometer. We are currently qualifying the tool, we'll send an email when it's ready for training.<br />
// [[User:John d|John d]] 10:39, 25 January 2023 (PST)<br />
<br />
===== Blue-M oven: Down =====<br />
BlueM down until further notice.<br />
Looking into blown fuse issues.<br />
// [[User:John d|John d]] 15:37, 19 January 2023 (PST)<br />
<br />
===== Stepper #1 GCA 6300: maintenance =====<br />
This tool has been scheduled for maintenance and will be unavailable for the following dates/times:<br />
<br />
1-23-23 12:00pm till 1-23-23 5:00pm<br />
1-26-23 8:00am till 1-27-23 8:00am<br />
// [[User:John d|John d]] 15:01, 19 January 2023 (PST)<br />
<br />
===== Stepper #2 AUtostep200: maintenance =====<br />
This tool has been scheduled for maintenance and will be unavailable for the following dates/times:<br />
<br />
1-23-23 8:00am till 1-23-23 12:00pm<br />
1-24-23 8:00am till 1-26-23 8:00am<br />
// [[User:John d|John d]] 15:35, 19 January 2023 (PST)<br />
<br />
===== Au Plating: DOWN =====<br />
Bath damaged, system is down for repair. <br />
// [[User:John d|John d]] 08:48, 27 October 2022 (PDT)<br />
<br />
==== Oxford Cobra ICP Etch ====<br />
ICP power supply has failed. We have requested a replacement from the vendor and a timeline for repair. <br />
// [[User:Silva|Silva]] 07:23, 25 January 2023 (PST)<br />
<br />
<!---------- end of Equipment Status ------------><br />
<!----------------------------------------------><br />
<endfeed /><br />
<noinclude>[[Category:Templates]]</noinclude><br />
<!--------------------------------------------<br />
<br />
<br />
<br />
<br />
====== HOW TO ADD ITEMS ======<br />
<br />
* You can copy/paste the example below for a new news item.<br />
* Use level 5 heading for each item (5 equal signs surrounding the title) - they will show up as separate RSS items this way. (This looks best on the Wiki homepage)<br />
* You must add a user signature at the end of each post via four tildes: ~~~~. Required for the RSS plugin to determine the timestamp, or else post goes to the end of the RSS feed. <br />
* Use double-slash: // at start of new lines - makes display on the Samsung Display look a lot better, since it strips newlines.<br />
* Optional: After saving the page, delete the name after the two dashes "--" and delete the "[[(talk)...]]" link. <br />
* Please use "There are no announcements at this time." if the announcements are empty.<br />
<br />
* URL to the RSS feed via FeedBurner (for Samsung display): http://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
* URL to the RSS feed directly from Wiki: https://wiki.nanotech.ucsb.edu/w/index.php?title=Template:Announcements&action=feed&feed=rss<br />
<br />
<br />
******** EXAMPLE OF A NEW POST ********<br />
<br />
===== NanoFab making LN2 icecream =====<br />
Tomorrow the NanoFab will be serving liquid nitrogen ice cream.<br />
// ~~~~<br />
<br />
************* (end of example) **************<br />
The ~~~~ will be replaced with your username & timestamp after you submit the post.<br />
----------------------------------------------></div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Orientation_Questionnaire.docx&diff=160832
File:Orientation Questionnaire.docx
2023-01-11T22:02:46Z
<p>Thibeault: To link users to orientation questionnaire</p>
<hr />
<div>== Summary ==<br />
To link users to orientation questionnaire</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Usage_Data_and_Statistics&diff=160752
Usage Data and Statistics
2022-12-05T23:22:21Z
<p>Thibeault: /* Presentations and Reports */</p>
<hr />
<div>===Numbers of Annual Users===<br />
The UCSB Nanofabrication Facility has seen large user base growth extending from 1998 to the present. A decrease was seen from 2013-2015 which was primarily a result of reduced academic government funding stemming from sequestration. Since 2015, growth in both academic and industrial sectors has been observed with 2019 reaching the highest levels to date. Covid-19 deeply affected the 2020 use, but has since rebounded. The facility serves a broad range of disciplines with Optics, Electronics, Materials, MEMs, and Physics all being over 12% of use. 2018 data is shown as an example and this remains a consistent representation.<br />
<br />
[[File:Yearly Users by Affiliation Through 2018.png|800x800px|Number of lab users per year from 1998-2020 by affiliation|none|thumb]]<br />
[[File:2018 User Chart by Discipline.png|frame|Percentages of Users by User-Reported Research Discipline for 2018|none]]<br />
<br />
===External Use of Facility===<br />
The UCSB Nanofabrication Facility serves a wide range of external academic and industrial institutions across the nation. From 2006 through 2020, we have served 92 Academic/Government Institutions (with multiple research groups within some institutions) and 260 Industrial Institutions (195 being small business). This external use is not affiliated with any sponsored UCSB academic research program[[File:US_Usage_Map_2006-2018.png|800x800px|US Map of external institutions served by UCSB Nanotech 2006-2018|none]]The facility has served over 200 total California businesses from 2006 – 2020. 68 are from the SB/Goleta area with 29 of these being formed by faculty and/or former UCSB graduate students and researchers. <br />
<br />
[[File:CA Usage Map 2006-2018.png|frameless|502x502px|CA Map of external institutions served by UCSB Nanotech 2006-2018|link=Special:FilePath/CA_Usage_Map_2006-2018.png]]<br />
<br />
===Presentations and Reports===<br />
<br />
*[[Media:FacilityPresentation.pdf|NanoFab Facility Usage Overview Slideshow - 2021]]</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:FacilityPresentation.pdf&diff=160751
File:FacilityPresentation.pdf
2022-12-05T23:19:56Z
<p>Thibeault: </p>
<hr />
<div></div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Usage_Data_and_Statistics&diff=160750
Usage Data and Statistics
2022-12-05T23:16:54Z
<p>Thibeault: Undo revision 160749 by Thibeault (talk)</p>
<hr />
<div>===Numbers of Annual Users===<br />
The UCSB Nanofabrication Facility has seen large user base growth extending from 1998 to the present. A decrease was seen from 2013-2015 which was primarily a result of reduced academic government funding stemming from sequestration. Since 2015, growth in both academic and industrial sectors has been observed with 2019 reaching the highest levels to date. Covid-19 deeply affected the 2020 use, but has since rebounded. The facility serves a broad range of disciplines with Optics, Electronics, Materials, MEMs, and Physics all being over 12% of use. 2018 data is shown as an example and this remains a consistent representation.<br />
<br />
[[File:Yearly Users by Affiliation Through 2018.png|800x800px|Number of lab users per year from 1998-2020 by affiliation|none|thumb]]<br />
[[File:2018 User Chart by Discipline.png|frame|Percentages of Users by User-Reported Research Discipline for 2018|none]]<br />
<br />
===External Use of Facility===<br />
The UCSB Nanofabrication Facility serves a wide range of external academic and industrial institutions across the nation. From 2006 through 2020, we have served 92 Academic/Government Institutions (with multiple research groups within some institutions) and 260 Industrial Institutions (195 being small business). This external use is not affiliated with any sponsored UCSB academic research program[[File:US_Usage_Map_2006-2018.png|800x800px|US Map of external institutions served by UCSB Nanotech 2006-2018|none]]The facility has served over 200 total California businesses from 2006 – 2020. 68 are from the SB/Goleta area with 29 of these being formed by faculty and/or former UCSB graduate students and researchers. <br />
<br />
[[File:CA Usage Map 2006-2018.png|frameless|502x502px|CA Map of external institutions served by UCSB Nanotech 2006-2018|link=Special:FilePath/CA_Usage_Map_2006-2018.png]]<br />
<br />
===Presentations and Reports===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/uploads/2018/Nanofabrication%20Facility%20Overview%20for%20Wiki%20-%20%2005-2018%20-%20v2.1%20small.pdf NanoFab Facility Usage Overview Slideshow] - 2018</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Usage_Data_and_Statistics&diff=160749
Usage Data and Statistics
2022-12-05T23:15:34Z
<p>Thibeault: /* Presentations and Reports */</p>
<hr />
<div>===Numbers of Annual Users===<br />
The UCSB Nanofabrication Facility has seen large user base growth extending from 1998 to the present. A decrease was seen from 2013-2015 which was primarily a result of reduced academic government funding stemming from sequestration. Since 2015, growth in both academic and industrial sectors has been observed with 2019 reaching the highest levels to date. Covid-19 deeply affected the 2020 use, but has since rebounded. The facility serves a broad range of disciplines with Optics, Electronics, Materials, MEMs, and Physics all being over 12% of use. 2018 data is shown as an example and this remains a consistent representation.<br />
<br />
[[File:Yearly Users by Affiliation Through 2018.png|800x800px|Number of lab users per year from 1998-2020 by affiliation|none|thumb]]<br />
[[File:2018 User Chart by Discipline.png|frame|Percentages of Users by User-Reported Research Discipline for 2018|none]]<br />
<br />
===External Use of Facility===<br />
The UCSB Nanofabrication Facility serves a wide range of external academic and industrial institutions across the nation. From 2006 through 2020, we have served 92 Academic/Government Institutions (with multiple research groups within some institutions) and 260 Industrial Institutions (195 being small business). This external use is not affiliated with any sponsored UCSB academic research program[[File:US_Usage_Map_2006-2018.png|800x800px|US Map of external institutions served by UCSB Nanotech 2006-2018|none]]The facility has served over 200 total California businesses from 2006 – 2020. 68 are from the SB/Goleta area with 29 of these being formed by faculty and/or former UCSB graduate students and researchers. <br />
<br />
[[File:CA Usage Map 2006-2018.png|frameless|502x502px|CA Map of external institutions served by UCSB Nanotech 2006-2018|link=Special:FilePath/CA_Usage_Map_2006-2018.png]]<br />
<br />
===Presentations and Reports===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/uploads/2018/Nanofabrication%20Facility%20Overview%20for%20Wiki%20-%20%2005-2021%20-%20v2.1%20small.pdf NanoFab Facility Usage Overview Slideshow] - 2021</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Usage_Data_and_Statistics&diff=160748
Usage Data and Statistics
2022-12-05T23:09:07Z
<p>Thibeault: </p>
<hr />
<div>===Numbers of Annual Users===<br />
The UCSB Nanofabrication Facility has seen large user base growth extending from 1998 to the present. A decrease was seen from 2013-2015 which was primarily a result of reduced academic government funding stemming from sequestration. Since 2015, growth in both academic and industrial sectors has been observed with 2019 reaching the highest levels to date. Covid-19 deeply affected the 2020 use, but has since rebounded. The facility serves a broad range of disciplines with Optics, Electronics, Materials, MEMs, and Physics all being over 12% of use. 2018 data is shown as an example and this remains a consistent representation.<br />
<br />
[[File:Yearly Users by Affiliation Through 2018.png|800x800px|Number of lab users per year from 1998-2020 by affiliation|none|thumb]]<br />
[[File:2018 User Chart by Discipline.png|frame|Percentages of Users by User-Reported Research Discipline for 2018|none]]<br />
<br />
===External Use of Facility===<br />
The UCSB Nanofabrication Facility serves a wide range of external academic and industrial institutions across the nation. From 2006 through 2020, we have served 92 Academic/Government Institutions (with multiple research groups within some institutions) and 260 Industrial Institutions (195 being small business). This external use is not affiliated with any sponsored UCSB academic research program[[File:US_Usage_Map_2006-2018.png|800x800px|US Map of external institutions served by UCSB Nanotech 2006-2018|none]]The facility has served over 200 total California businesses from 2006 – 2020. 68 are from the SB/Goleta area with 29 of these being formed by faculty and/or former UCSB graduate students and researchers. <br />
<br />
[[File:CA Usage Map 2006-2018.png|frameless|502x502px|CA Map of external institutions served by UCSB Nanotech 2006-2018|link=Special:FilePath/CA_Usage_Map_2006-2018.png]]<br />
<br />
===Presentations and Reports===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/uploads/2018/Nanofabrication%20Facility%20Overview%20for%20Wiki%20-%20%2005-2018%20-%20v2.1%20small.pdf NanoFab Facility Usage Overview Slideshow] - 2018</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:CA_Usage_Map_2006-2018.png&diff=160747
File:CA Usage Map 2006-2018.png
2022-12-05T23:07:57Z
<p>Thibeault: </p>
<hr />
<div></div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Usage_Data_and_Statistics&diff=160746
Usage Data and Statistics
2022-12-05T23:05:42Z
<p>Thibeault: /* External Use of Facility */</p>
<hr />
<div>===Numbers of Annual Users===<br />
The UCSB Nanofabrication Facility has seen large user base growth extending from 1998 to the present. A decrease was seen from 2013-2015 which was primarily a result of reduced academic government funding stemming from sequestration. Since 2015, growth in both academic and industrial sectors has been observed with 2019 reaching the highest levels to date. Covid-19 deeply affected the 2020 use, but has since rebounded. The facility serves a broad range of disciplines with Optics, Electronics, Materials, MEMs, and Physics all being over 12% of use. 2018 data is shown as an example and this remains a consistent representation.<br />
<br />
[[File:Yearly Users by Affiliation Through 2018.png|800x800px|Number of lab users per year from 1998-2020 by affiliation|none|thumb]]<br />
[[File:2018 User Chart by Discipline.png|frame|Percentages of Users by User-Reported Research Discipline for 2018|none]]<br />
<br />
===External Use of Facility===<br />
The UCSB Nanofabrication Facility serves a wide range of external academic and industrial institutions across the nation. From 2006 through 2020, we have served 92 Academic/Government Institutions (with multiple research groups within some institutions) and 260 Industrial Institutions (195 being small business). This external use is not affiliated with any sponsored UCSB academic research program[[File:US_Usage_Map_2006-2018.png|800x800px|US Map of external institutions served by UCSB Nanotech 2006-2018|none]]The facility has served over 200 total California businesses from 2006 – 2020. 68 are from the SB/Goleta area with 29 of these being formed by faculty and/or former UCSB graduate students and researchers. <br />
<br />
[[File:CA Usage Map 2006-2018.png|frameless|800x800px|CA Map of external institutions served by UCSB Nanotech 2006-2018|link=Special:FilePath/CA_Usage_Map_2006-2018.png]]<br />
<br />
===Presentations and Reports===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/uploads/2018/Nanofabrication%20Facility%20Overview%20for%20Wiki%20-%20%2005-2018%20-%20v2.1%20small.pdf NanoFab Facility Usage Overview Slideshow] - 2018</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=Usage_Data_and_Statistics&diff=160744
Usage Data and Statistics
2022-12-05T22:58:38Z
<p>Thibeault: /* Numbers of Annual Users */</p>
<hr />
<div>===Numbers of Annual Users===<br />
The UCSB Nanofabrication Facility has seen large user base growth extending from 1998 to the present. A decrease was seen from 2013-2015 which was primarily a result of reduced academic government funding stemming from sequestration. Since 2015, growth in both academic and industrial sectors has been observed with 2019 reaching the highest levels to date. Covid-19 deeply affected the 2020 use, but has since rebounded. The facility serves a broad range of disciplines with Optics, Electronics, Materials, MEMs, and Physics all being over 12% of use. 2018 data is shown as an example and this remains a consistent representation.<br />
<br />
[[File:Yearly Users by Affiliation Through 2018.png|800x800px|Number of lab users per year from 1998-2020 by affiliation|none|thumb]]<br />
[[File:2018 User Chart by Discipline.png|frame|Percentages of Users by User-Reported Research Discipline for 2018|none]]<br />
<br />
===External Use of Facility===<br />
The UCSB Nanofabrication Facility serves a wide range of external academic and industrial institutions across the nation. From 2006 through 2018, we have served 69 Academic/Government Institutions (with multiple research groups within some institutions) and 243 Industrial Institutions for a total of 312 external US comapnies/universities. This external use is not affiliated with any sponsored UCSB academic research program[[File:US_Usage_Map_2006-2018.png|800x800px|US Map of external institutions served by UCSB Nanotech 2006-2018|none]]The facility has served 203 total California Institutions from 2006 – 2018. There are 18 Academic/Government Institutions (Many research groups within some institutions) and 185 Industrial Institutions (46 from the Goleta/Santa Barbara area)<br />
<br />
[[File:CA Usage Map 2006-2018.png|frameless|800x800px|CA Map of external institutions served by UCSB Nanotech 2006-2018]]<br />
<br />
===Presentations and Reports===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/wiki/images/uploads/2018/Nanofabrication%20Facility%20Overview%20for%20Wiki%20-%20%2005-2018%20-%20v2.1%20small.pdf NanoFab Facility Usage Overview Slideshow] - 2018</div>
Thibeault
https://wiki.nanofab.ucsb.edu/w/index.php?title=File:Yearly_Users_by_Affiliation_Through_2018.png&diff=160742
File:Yearly Users by Affiliation Through 2018.png
2022-12-05T22:54:11Z
<p>Thibeault: </p>
<hr />
<div></div>
Thibeault