UCSB Nanofab Wiki - Recent changes [en]

E-Beam Evaporation Recipes

Barreraz — Thu, 23 Jul 2026 19:40:35 GMT

Materials Table (E-Beam #1)

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	\|0.262		\|0.262
	\|		\|
	\|Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call maintainer before you try Ta.		\|Requires extremely high current. Minimum 35 minute cool down. Hearth #8 may be used. Call maintainer before you try Ta.
	\|-		\|-
	\|W		\|W

Sputtering Recipes

Millerski w — Wed, 22 Jul 2026 21:49:47 GMT

Materials Table (Sputter 5)

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	\|-		\|-
	\|Al2O3		\|Al2O3
	\|~~1.5~~		\|2
	\|DC5-SW1		\|DC5-SW1
	\|150		\|150

Frequently Asked Questions

John d — Tue, 21 Jul 2026 00:48:56 GMT

Publications acknowledging the Nanofab: added equip and facilities Eng.

← Older revision		Revision as of 00:48, 21 July 2026
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	Process knowledge gained from conversations, advice and brainstorming sessions may also constitute significant "intellectual contribution", and warrant authorship, or be worthy of an acknowledgement.		Process knowledge gained from conversations, advice and brainstorming sessions may also constitute significant "intellectual contribution", and warrant authorship, or be worthy of an acknowledgement.

			Please consider mentioning equipment engineers and facilities staff that have worked hard to keep your work going!

	Feel free to [[Brian Thibeault\|contact us]] if you would like to discuss any of these points, and thank you for understanding.		Feel free to [[Brian Thibeault\|contact us]] if you would like to discuss any of these points, and thank you for understanding.

Maskless Aligner (Heidelberg MLA150)

Sawyer l — Mon, 20 Jul 2026 16:17:52 GMT

SOP rev

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	===Standard Operating Procedures===		===Standard Operating Procedures===

	*[https://wiki.nanofab.ucsb.edu/w/images/7/7b/~~MLA150_SOP_Rev_N_~~%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024		*[https://wiki.nanofab.ucsb.edu/w/images/b/b0/MLA150_SOP_Rev_O_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024
	**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''		**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
	**User manuals ''are available at the tool and on the tool's computer.''		**User manuals ''are available at the tool and on the tool's computer.''

File:MLA150 SOP Rev O (LS).pdf

Sawyer l — Mon, 20 Jul 2026 16:14:40 GMT

Sawyer l uploaded File:MLA150 SOP Rev O (LS).pdf

New page

Maskless Aligner (Raith PicoMaster XF)

John d — Sat, 18 Jul 2026 19:03:42 GMT

added WIP notices

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	\|TrainingURL = ?		\|TrainingURL = ?
	}}		}}
			{{WIP}}

	==About==		==About==
	The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.		The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.
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	==Detailed Specifications==		==Detailed Specifications==
			{{WIP}}

	*Maximum Writeable Area: 150 x 150mm		*Maximum Writeable Area: 150 x 150mm
	*Substrate size: 9-inch square or 200mm round down to 5-mm pieces		*Substrate size: 9-inch square or 200mm round down to 5-mm pieces
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	==Operating Procedures==		==Operating Procedures==
			{{WIP}}

	===Standard Operating Procedures===		===Standard Operating Procedures===
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	==Recipes==		==Recipes==
			{{WIP}}

	*'''Recipes > Lithography >''' '''<u>[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29\|Maskless Aligner MLA150]]</u>'''		*'''Recipes > Lithography >''' '''<u>[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29\|Maskless Aligner MLA150]]</u>'''
	**''Starting recipes for various I-Line photoresists''		**''Starting recipes for various I-Line photoresists''

Template:News

John d — Sat, 18 Jul 2026 19:02:13 GMT

added Raith PicoMaster

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	<!---------------------------------------------->		<!---------------------------------------------->
	<!-------- NEWS ITEMS: newest on top -------->		<!-------- NEWS ITEMS: newest on top -------->
			=== Raith PicoMaster Direct-Write Installed ===
			We have installed a new H-Line (405nm) Direct-write tool: The [[Maskless_Aligner_(Raith_PicoMaster_XF)]]. The new tool is currently undergoing staff qualifications and we are developing operating procedures. // [[User:John_d\|Demis D. John]] 19:02, 18 July 2026 (UTC)

	===ProtoFab Opening Summer 2026===		===ProtoFab Opening Summer 2026===
	The Nanofab is launching a [https://protofab.oasis.ucsb.edu/ Prototyping Facility called the "Protofab"], which is located at [https://oasis.ucsb.edu/ UCSB's new OASIS building]. Learn more at [https://protofab.oasis.ucsb.edu https://protofab.oasis.ucsb.edu]		The Nanofab is launching a [https://protofab.oasis.ucsb.edu/ Prototyping Facility called the "Protofab"], which is located at [https://oasis.ucsb.edu/ UCSB's new OASIS building]. Learn more at [https://protofab.oasis.ucsb.edu https://protofab.oasis.ucsb.edu]

Tool List

John d — Sat, 18 Jul 2026 18:59:50 GMT

Lithography: added Raith Picomaster

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	*[[Focused Ion-Beam Lithography (Raith Velion)]]		*[[Focused Ion-Beam Lithography (Raith Velion)]]
	*[[Maskless Aligner (Heidelberg MLA150)]]		*[[Maskless Aligner (Heidelberg MLA150)]]
			*[[Maskless Aligner (Raith PicoMaster XF)]]

	=====Other Patterning Systems=====		=====Other Patterning Systems=====

Maskless Aligner (Raith PicoMaster XF)

John d — Sat, 18 Jul 2026 18:59:16 GMT

pasted MLA150 text

New page

{{tool2|{{PAGENAME}}
|picture=XYZ.jpg
|type = Lithography
|super = Biljana Stamenic
|super2 = Lee Sawyer
|location = Bay 6
|description = Direct-Write (Maskless) I-Line Photolithography
|manufacturer = ?
|model = ?
|toolid=?
|materials = I-Line Photoresists
}}
{{ToolActions|
|toolid = ?
|InstructionsURL =
|ProcessControlURL =
|TrainingURL = ?
}}
==About==
The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a [https://en.wikipedia.org/wiki/Digital_micromirror_device digital micromirror device] ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.

The system has a continuous, automatic autofocus, using optical and pneumatic detection of the substrate surface.

The software allows for custom drawings and alignment marks to be exposed onto any feature located on the microscope.

Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file. See the [[MLA150 - Troubleshooting#Greyscale Lithography Limitations|Greyscale Limitations page]] for more info.

The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.

[[File:MLA150 Spatial Light Modulator Description.png|alt=Schematic of spatial light modulator exposure technique.|none|thumb|550x600px|Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See [https://heidelberg-instruments.com/key-features/maskless-laser-lithography/ HIMT] for more info.]]

==Detailed Specifications==

*Maximum Writeable Area: 150 x 150mm
*Substrate size: 9-inch square or 200mm round down to 5-mm pieces
**''Contact staff for pieces < 5 mm.''
*Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
*Exposure optics:
**[https://en.wikipedia.org/wiki/Digital_micromirror_device Digital micromirror device (DMD)]
**Laser #1: 375nm
**Laser #2: 405nm
**Lens NA = 0.95
*Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
*Linewidth variation: ≤100nm (relevant to stitched exposure fields)
*Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
*Write Grid (Address Unit):
**High Quality Mode (std.): 40nm
**Fast Mode: 100nm

*Additional manufacturer options:
**High-resolution option (Write Mode 1)
**Extended Focus Range
**Variable Focal Depth
**Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
**Greyscale Mode
**(No backside alignment)

==Operating Procedures==

===Standard Operating Procedures===

*[https://wiki.nanofab.ucsb.edu/w/images/7/7b/MLA150_SOP_Rev_N_%28LS%29.pdf MLA150 - Standard Operating Procedure] - updated Nov 15th 2024
**''Includes File-upload procedure, CAD Conversion, Exposure and Alignment.''
**User manuals ''are available at the tool and on the tool's computer.''
*[https://wiki.nanofab.ucsb.edu/w/images/9/95/MLA150_Quick_Start_Rev_B.pdf MLA150 Quick Start Guide **Experienced Users Only**]
*[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, reflecting allowed sample sizes for each focus mode.

=== Video Training ===
*[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e '''Video Training for MLA150''']
**''Bookmarks in the video can point you to specific solutions/procedures.''
**'''UPDATES to the Video Training''': ''please review the addendums below:''
***New software has been installed, the '''[https://wiki.nanotech.ucsb.edu/w/images/e/ec/MLA150_SOP_Rev_L_%28LS%29.docx.pdf SOP]''' shows the newer menu options.
***CRITICAL: There are now TWO locations on which you must choose "Optical Autofocus". Failure to do so can result in system damage.
***[https://wiki.nanotech.ucsb.edu/w/images/4/48/MLA150_Substrate_Template_Rules.pdf Substrate Templates] have been updated, which are currently not reflected in the video.
***Numerous solved issues have been added to the [[MLA150 - Troubleshooting|'''Troubleshooting page''']].

=== Special Procedures ===

*[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|Calibrating your Process with a Focus-Exposure Matrix (FEM)]] - called ''"Series"'' mode on the MLA
*[[MLA150 - Large Image GDS Generation|Large Image Patterning]] - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)

===[[MLA150 - Troubleshooting|Troubleshooting & Known Bugs]]===

*''See the above page for troubleshooting/recovery info and workarounds to known bugs.''
*Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact [[Demis D. John|staff]] if you need help with this.

===Training Procedure===
To get authorized on this tool:

#please study the training videos here: '''[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=5813cf18-37cb-48f1-aee6-acd50055c65e Heidelberg MLA150 Training Video]'''
#"shadow" experienced users in your group, if you have any, and
#when you are ready, click this button to request training:{{ToolTrainingButton|toolid=32}}

==Design Info - CAD layout==

*[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''Important info for designing your CAD files, alignment marks etc.''
*[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - ''example CAD designs and useful CAD structures.''

==Recipes==

*'''Recipes > Lithography >''' '''[[Maskless Aligner Recipes#Maskless Aligner .28Heidelberg MLA150.29|Maskless Aligner MLA150]]'''
**''Starting recipes for various I-Line photoresists''

=== Calibrate your own Litho process ===
* Use '''Series''' mode exposure for doing an FEM ("Focus-Exposure Matrix") on the MLA150.
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM for repeatable processes

Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes|Photolithography Recipes]] page.

RIE Etching Recipes

John d — Fri, 17 Jul 2026 03:13:19 GMT

Photoresist and ARC (RIE 5)

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	*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec		*O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
	*No need to pump/purge, can etch right away.		*No need to pump/purge, can etch right away
	*No helium cooling~~, Run in manual mode.~~		*No helium cooling
			*Can run in manual mode

Direct-Write Lithography Recipes

John d — Fri, 17 Jul 2026 03:11:48 GMT

Positive Resist (MLA150): moved 955-0.9 and comment that it's used for lithocals

@@ Line 78: / Line 78: @@
+|
+|
 |-
 |[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 955-1.8]]
@@ Line 118: / Line 131: @@
 |70s
 |Rehydration after exposure is necessary, to prevent bubbles at PEB.
 |-
 |[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]]

Services

John d — Wed, 15 Jul 2026 21:11:11 GMT

Fabrication Services by NanoFab Staff: simplifications and minor updates.

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	*[https://www.nanotech.ucsb.edu/services#comp-k3rx7hk4 '''Rates are listed here'''].		*[https://www.nanotech.ucsb.edu/services#comp-k3rx7hk4 '''Rates are listed here'''].
	**We bill for both "<u>''Use of Facility + Equipment''</u>" '''plus''' "''<u>Dedicated staff support</u>''" time per hour.		**We bill for both "<u>''Use of Facility + Equipment''</u>" '''plus''' "''<u>Dedicated staff support</u>''" time per hour.
		⚫	**We will only apply '''Academic/Gov't rates''' if the technical contact directing the work is at the academic/gov't institution we have a signed service agreement with.
	**This is similar to your own employee using the lab.
		⚫	*You will work directly with [[Demis D. John\|Demis]] or [[Staff List#Process Group\|his staff]] to accept + schedule the work, if the project is accepted.
	**The technical contact for all work performed by UCSB Nanofab staff must be an employee or paid contractor of the institution that has signed the service agreement with UCSB. '''--''' '''New 2025-02'''
⚫	**~~'''~~We will only apply Academic/Gov't rates''' if the technical contact directing the work is at the academic institution we have a signed service agreement with. ~~'''--''' '''New 2025-02'''~~
⚫	*You will work directly with [[Demis D. John\|Demis]] or [[Staff List#Process Group\|his staff]] to schedule the work, if the project is accepted.
	**Any project must first be accepted by our Project Scientists.
	**We have limited staff and are not a foundry, and we will only accept jobs that we are capable of performing with success.		**We have limited staff and are not a foundry, and we will only accept jobs that we are capable of performing with success.
	*~~There is '''''no guarantee''''' of research results or success in fabrication.~~ We may ~~also~~ be able to suggest other ways to get your devices made in our lab if Staff use is not appropriate for your project.		**We may be able to suggest other ways to get your devices made in our lab if Staff use is not appropriate for your project.
			*There is '''''no guarantee''''' of research results or success in fabrication.
	*You will be <u>billed for the Actual time and materials required during the job</u>, regardless of project outcome.		*You will be <u>billed for the Actual time and materials required during the job</u>, regardless of project outcome.
	**We can provide only a rough ''estimate'' of time and cost because it's an hourly service, not a "quote".		**We can provide only a rough ''estimate'' of time and cost because it's an hourly service, not a "quote".
	*We send out bills ~~monthly~~, with payment expected as Net30; Credit card payments are accepted.		*We send out bills at the end of each month, with payment expected as Net30; Credit card payments are accepted.
	*[[Frequently Asked Questions#Publications acknowledging the Nanofab\|Publications Policy]] - fabrication executed by NanoFab Staff is often significant "''intellectual contribution''". Acknowledgement of NanoFab use is required at minimum.		*[[Frequently Asked Questions#Publications acknowledging the Nanofab\|Publications Policy]] - fabrication executed by NanoFab Staff is often significant "''intellectual contribution''". [[Frequently Asked Questions#Publications acknowledging the Nanofab\|Acknowledgement of NanoFab use]] is required at minimum.

	===Request Remote Fabrication Services===		===Request Remote Fabrication Services===
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	====Paperwork for Fabrication Services====		====Paperwork for Fabrication Services====
		⚫	4. Return the [//wiki.nanotech.ucsb.edu/w/images/1/1d/UCSB_Service_Agreement.pdf '''UCSB Service Agreement'''] (download)

		⚫	*Requires signature from your institution - <u>signature authority required</u>, typically ''not'' the professor or graduate student. Business or Contracts Dept., for example.

		⚫	*Only one agreement is needed per institution. Ask us to find out if your inst. already has one in place.
			*'''UC Users:''' this is not NOT needed.
	3. Submit the [//wiki.nanotech.ucsb.edu/w/images/7/79/Nanofabrication_Facility_Project_Description.xlsx '''Project Info and Description Form'''] (download) to [Mailto:nanofab-job-inquiry@ece.ucsb.edu,claudia18@ucsb.edu?subject=Fab+Services+Project+Description Demis D. John and Claudia Gutierrez]		3. Submit the [//wiki.nanotech.ucsb.edu/w/images/7/79/Nanofabrication_Facility_Project_Description.xlsx '''Project Info and Description Form'''] (download) to [Mailto:nanofab-job-inquiry@ece.ucsb.edu,claudia18@ucsb.edu?subject=Fab+Services+Project+Description Demis D. John and Claudia Gutierrez]

	*No signatures required, only project info and contact info for internal billing purposes.		*No signatures required, only project info and contact info for internal billing purposes. A student cal fill this out.
	*'''UC Users''' - in the Project Description, you will have to provide a valid Recharge Account number to bill against.		*'''UC Users''' - in the Project Description, you will have to provide a valid Recharge Account number to bill against.

⚫	4. Return the [//wiki.nanotech.ucsb.edu/w/images/1/1d/UCSB_Service_Agreement.pdf '''UCSB Service Agreement'''] (download)

⚫	*Requires signature from your institution (<u>signature authority required</u>, typically ''not'' the professor or graduate student. Business or Contracts ~~Bept~~., for example)

⚫	*Only one agreement is needed per institution. Ask us to find out if your inst. already has one in place.
	*NOT needed for '''UC Users'''.
	===='''Statement of Work'''====		===='''Statement of Work'''====
	For each request, please provide a quick PPT/Word/similar doc explaining exactly what you need done ("SOW"), ~~which~~ should include:		For each request, please provide a quick PPT/Word/similar doc explaining ''exactly'' what you need done ("SOW"). We will discuss this with you before starting the work, and our staff may use this document to answer questions that come up during processing. Your SOW should include:

	*~~Please name~~ your file something like: "'''''2024-08~~-21~~''' SiO2 Dep '''v1'''.pptx''"		*Name your file something unique with a date like: "'''''2024-08''' SiO2 Dep '''v1'''.pptx''"
	**We use the approx date as your BatchID		**We use the approx date as your BatchID
	**Revisions will update only the ''v1/2/3'' number, but keep the BatchID the same.		**Revisions will update only the ''v1/2/3'' number, but keep the BatchID the same.
	*How many wafers to run and/or number of samples to be provided.		*How many wafers to run and/or number of samples to be provided.
			**Sample ID's/numbering is highly recommended if appropriate.
	*Size/Shape of samples. Eg. "''4-inch wafers''" or "''irregular ~1cm pieces''"		*Size/Shape of samples. Eg. "''4-inch wafers''" or "''irregular ~1cm pieces''"
	*Exact processing steps to perform. Staff will assist filling in any missing details.		*Exact processing steps to perform. Staff will assist filling in any missing details.
	**Please clearly state which steps UCSB Staff will perform, versus steps your staff will perform, if needed.		**Please clearly state which steps UCSB Staff will perform, versus steps your staff will perform, if needed.
	*Targets and acceptable tolerances for the main steps, eg. "''Deposit 500nm of SiO2, acceptable range 450-550nm (±10% tolerance)''".		*Targets and acceptable tolerances for the main steps, eg. "''Deposit 500nm of SiO2, acceptable range 450-550nm (±10% tolerance)''".
⚫	**Note that tight tolerances (<<10%) will require us to run additional calibrations at your expense, so please choose a tolerance that is ''required'' for your devices to work.
	**It is common to '''not know the tolerance''' for research devices, so just leave that out and a "best effort" is usually acceptable.		**It is common to '''not know the tolerance''' for research devices, so just leave that out and a "best effort" is usually acceptable.
		⚫	**Note that tight tolerances (<<10%) will require us to run additional calibrations at your expense, so please choose a tolerance that you know is ''required'' for your devices to work.

	===== Example SOWs =====		===== Example SOWs =====

Contact Aligner (SUSS MA-6)

John d — Wed, 15 Jul 2026 00:07:05 GMT

Operating Procedures: removed "in progress"

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	=== Mask Plate Info ===		=== Mask Plate Info ===

	* [[Mask Making Guidelines for Contact Aligners\|Mask Making Guidelines - Contact Masks]] - ~~''in~~ ~~progress''~~		* [[Mask Making Guidelines for Contact Aligners\|Mask Making Guidelines - Contact Masks]] - how to make litho mask plates for this tool.

	*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the UCSB purchasing system.		*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the UCSB purchasing system.