UCSB Nanofab Wiki - Recent changes [en]

MLA150 - Design Guidelines

John d — Wed, 16 Sep 2026 21:14:25 GMT

Reducing Write Time: added vertical stripe trick

← Older revision		Revision as of 21:14, 16 September 2026
Line 17:		Line 17:

	* If your CAD file has many (eg. thousands/millions) of overlapping polygons, the conversion software can take a long time to process the file. This looks like the tool's write-head writing / pausing / writing / pausing as the tool waits for more data from the computer during the "converting/exposing" operation. You can '''"merge" the polygons''' in KLayout prior to writing to reduce this. We found that a 1hr exposure → 10min with this method!		* If your CAD file has many (eg. thousands/millions) of overlapping polygons, the conversion software can take a long time to process the file. This looks like the tool's write-head writing / pausing / writing / pausing as the tool waits for more data from the computer during the "converting/exposing" operation. You can '''"merge" the polygons''' in KLayout prior to writing to reduce this. We found that a 1hr exposure → 10min with this method!
	* Write time scales directly with write area. If you have large areas to expose with small unexposed regions in between consider using a negative PR and an inverted CAD file to reduce write area.		* Write time approximately scales directly with write area. If you have large areas to expose with small unexposed regions in between consider using a negative PR and an inverted CAD file to reduce write area.
			* Since the raster scan does the fast-scan in the Y-axis, and the tool generates vertical "stripes" for each patterning region, if you have large vertical regions with no exposure, you can reduce write time by ensuring there are no objects in those vertical area - the tool will skip those Stripes entirely. Even a small dot in a vertical Stripe area will require the tool to write the entire stripe.

	==CAD Design File Specifications==		==CAD Design File Specifications==

IR Thermal Microscope (QFI) - Standard Operating Procedure (HotSpot/ThermalEmission)

John d — Tue, 15 Sep 2026 18:01:47 GMT

fixed hotspot link

← Older revision		Revision as of 18:01, 15 September 2026
(One intermediate revision by the same user not shown)
Line 15:		Line 15:
	# Move the stage all the way forward with the front-most knob, put the sample on the stage, then move the stage back under the backmost microscope. ENSURE no probe needles are down, nor collide during this process! Do not touch the probe needles with your sample or tweezers.		# Move the stage all the way forward with the front-most knob, put the sample on the stage, then move the stage back under the backmost microscope. ENSURE no probe needles are down, nor collide during this process! Do not touch the probe needles with your sample or tweezers.
	# Move the probe manipulators to the right position to contact the device. CAREFUL - the magnetic bases can be hard to move, ensure nothing collides when making large movements. '''In the Software:'''		# Move the probe manipulators to the right position to contact the device. CAREFUL - the magnetic bases can be hard to move, ensure nothing collides when making large movements. '''In the Software:'''
			# Follow the QFI SOP's for acquiring measurements:
⚫	# ~~Follow the [Https://wiki.nanofab.ucsb.edu/w/images/e/ef/WFI&~~#~~x20;-HS 102 Quick Start Guide - Standard Hot Spot.pdf QFI Hot Spot S.O.P.] or~~ [https://wiki.nanofab.ucsb.edu/w/images/8/81/TM101_Standard_Temperature_Mapping_%281-Temp_Emissivity_Method%29.pdf QFI Temperature Mapping S.O.P.]
			## [[Media:WFI -HS 102 Quick Start Guide - Standard Hot Spot.pdf\|QFI Hot Spot S.O.P.]], or
⚫	# ~~For saving data:~~ To save your image, right click on the image and save as.
		⚫	## [https://wiki.nanofab.ucsb.edu/w/images/8/81/TM101_Standard_Temperature_Mapping_%281-Temp_Emissivity_Method%29.pdf QFI Temperature Mapping S.O.P.]
	# Save the file in your Nanofiles folder.
		⚫	# To save your image, right click on the image and save as.
			# Save the file into your Nanofiles folder, so you can download it [[Frequently Asked Questions#How do I get my files from the NanoFab computers?\|via FTP]].

	==== Ending your Session ====		==== Ending your Session ====

IR Thermal Microscope (QFI) - Standard Operating Procedure (HotSpot/ThermalEmission)

Barreraz — Tue, 15 Sep 2026 17:55:09 GMT

QFI upgraded, new SOP

@@ Line 15: / Line 15: @@
 # Move the stage all the way forward with the front-most knob, put the sample on the stage, then move the stage back under the backmost microscope.  ENSURE no probe needles are down, nor collide during this process!  Do not touch the probe needles with your sample or tweezers.
 # Move the probe manipulators to the right position to contact the device. CAREFUL - the magnetic bases can be hard to move, ensure nothing collides when making large movements. '''In the Software:'''
 # Save the file in your Nanofiles folder.
 ==== Ending your Session ====
@@ Line 54: / Line 29: @@
 # Sync the data with the "'''''Nanofiles Sync'''''" program on the desktop.
 ## Optionally check that the data is available on your laptop.
 # Close the dark box.

File:TM101 Standard Temperature Mapping (1-Temp Emissivity Method).pdf

Barreraz — Tue, 15 Sep 2026 17:53:07 GMT

Barreraz uploaded File:TM101 Standard Temperature Mapping (1-Temp Emissivity Method).pdf

New page

File:WFI -HS 102 Quick Start Guide - Standard Hot Spot.pdf

Barreraz — Tue, 15 Sep 2026 17:42:02 GMT

Barreraz uploaded File:WFI -HS 102 Quick Start Guide - Standard Hot Spot.pdf

New page

Photolithography - Improving Adhesion Photoresist Adhesion

John d — Thu, 10 Sep 2026 19:33:38 GMT

Updated underlayer process and tips

← Older revision		Revision as of 19:33, 10 September 2026
Line 1:		Line 1:
⚫	Don't forget that, for [[Lithography Recipes#Lift-Off Recipes\|lift-off processes]], the Imaging (top) Photoresist will lift-off as well if you undercut it too much during develop!

	==Underlayers for improving PR adhesion==		==Underlayers for improving PR adhesion==
	High-temperature (>150°C) underlayers, such as LOL1000/2000, BARC layers tend to improve adhesion of the imaging resist.		High-temperature (>150°C) underlayers, such as LOL1000/2000, BARC layers tend to improve adhesion of the imaging resist.
Line 7:		Line 5:
	*Apply high-temp underlayer, eg. LOL1000/2000, PMGI, DSK101 (DUV), DSK42P (DUV)		*Apply high-temp underlayer, eg. LOL1000/2000, PMGI, DSK101 (DUV), DSK42P (DUV)
	**Beware of underlayers that have a develop-rate - undercutting the imaging PR fully can also cause delamination)		**Beware of underlayers that have a develop-rate - undercutting the imaging PR fully can also cause delamination)
			*Bake at recommended temperature for the underlayer, typically >> 150°C.
	*Apply your Imaging photoresist as normal.		*Apply & bake your Imaging photoresist as normal for that resist,
			**Bake temp should be lower than the underlayer bake temp.
			*If your underlayer dissolves during the same develop step as the imaging resist, you will need to increase your develop time to go through both layers.
		⚫	**Don't forget that, for [[Lithography Recipes#Lift-Off Recipes\|lift-off processes]], the Imaging (top) Photoresist will lift-off as well if you undercut it too much during develop!

	==HMDS Process for PR Improving Adhesion==		==HMDS Process for PR Improving Adhesion==

MediaWiki:Sidebar

John d — Wed, 09 Sep 2026 19:41:19 GMT

← Older revision		Revision as of 19:41, 9 September 2026
Line 6:		Line 6:
	** https://signupmonkey.ece.ucsb.edu\|Equipment Signup		** https://signupmonkey.ece.ucsb.edu\|Equipment Signup
	** Chemical List\|Chemicals + MSDS		** Chemical List\|Chemicals + MSDS
	** https://protofab.oasis.ucsb.edu\|-- Protofab --		** https://protofab.oasis.ucsb.edu\|Protofab
	* Equipment		* Equipment
	** Tool List\|Full Tool List		** Tool List\|Full Tool List

MediaWiki:Common.css

John d — Wed, 09 Sep 2026 19:41:03 GMT

bolding Protofab text in sidebar

← Older revision		Revision as of 19:41, 9 September 2026
Line 31:		Line 31:
	}		}

			/*
	li#n-COVID-19-Protocols a {		li#n-COVID-19-Protocols a {
			font-weight: bold;
			}
			*/


			/* Bold specific sidebar items: */
			li#n-Protofab a {
	font-weight: bold;		font-weight: bold;
	}		}

MediaWiki:Sidebar

John d — Wed, 09 Sep 2026 19:39:32 GMT

← Older revision		Revision as of 19:39, 9 September 2026
(3 intermediate revisions by the same user not shown)
Line 6:		Line 6:
	** https://signupmonkey.ece.ucsb.edu\|Equipment Signup		** https://signupmonkey.ece.ucsb.edu\|Equipment Signup
	** Chemical List\|Chemicals + MSDS		** Chemical List\|Chemicals + MSDS
			** https://protofab.oasis.ucsb.edu\|-- Protofab --
	* Equipment		* Equipment
	** Tool List\|Full Tool List		** Tool List\|Full Tool List

User:Ksimha

Ksimha — Mon, 07 Sep 2026 19:11:11 GMT

User account Ksimha was created

Wet Etching Recipes

John d — Sat, 05 Sep 2026 03:25:50 GMT

Table of Wet Etching Recipes: added GaSb substrate removal etch

@@ Line 80: / Line 80: @@
+|
 |Garrett Cole
 |-
 |AlGaAs,

File:UCSB Service Agreement.pdf

John d — Fri, 04 Sep 2026 22:40:20 GMT

John d uploaded a new version of File:UCSB Service Agreement.pdf Rev.6-2026 adds protofab to Attachment A

New page

== Summary ==
UCSB Service Agreement, for Remote Fabrication Services section of Nanotech website.
[[Category:Services]]

Frequently Asked Questions

Thibeault — Wed, 02 Sep 2026 17:43:25 GMT

Wifi Access in the Nanofab

← Older revision		Revision as of 17:43, 2 September 2026
Line 196:		Line 196:

	===Wifi Access in the Nanofab===		===Wifi Access in the Nanofab===
	~~The~~ ~~Wifi~~ ~~networks~~ ~~"'''''UCSB Secure'''''" (preferred) and "'''''UCSB Wireless'''''" (~~will ~~ask for login every time) and~~ "'''''eduroam'''''" (also works for other educational institutions) have full coverage in the NanoFab. All ~~UC students/employees can~~ use their NetID's to access ~~these~~ ~~networks~~ (~~although ''EduRoam''~~ the full UCSB email address like this ''YourNetID@ucsb.edu'' as your username).		All authorized users will use "'''''eduroam'''''" (also works for other educational institutions) and have full coverage in the NanoFab. All users use their UCSB NetID's to access this network (use the full UCSB email address like this ''YourNetID@ucsb.edu'' as your username).

			For visitors without a UCSBNetID, you will log into the "UCSB Wireless Web" site and follow instructions for guest access.
	External institutions can request a login from [[Brian Thibeault]].

	====Cell Phone Calls====		====Cell Phone Calls====

PECVD 1 (PlasmaTherm 790)

Barreraz — Tue, 01 Sep 2026 17:33:10 GMT

Documentation

← Older revision		Revision as of 17:33, 1 September 2026
Line 56:		Line 56:

	==Documentation==		==Documentation==
	*[https://wiki.nanofab.ucsb.edu/w/images/6/64/~~IMG_7361~~.~~jpg~~ Operating Instructions]		*[https://wiki.nanofab.ucsb.edu/w/images/e/e0/PECVD1_SOP_8-26-26.pdf Operating Instructions]
			*
	*[[PECVD1 Wafer Coating Process\|Wafer Coating Process Traveler]]
	*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]		*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]

File:PECVD1 SOP 8-26-26.pdf

Barreraz — Tue, 01 Sep 2026 17:32:08 GMT

Barreraz uploaded File:PECVD1 SOP 8-26-26.pdf

New page

ICP Etching Recipes

John d — Mon, 31 Aug 2026 17:44:37 GMT

Si Etch Recipes (Fluorine ICP Etcher): link to main process control page and internships pages

← Older revision		Revision as of 17:44, 31 August 2026
Line 183:		Line 183:
	* Use the Santovac oil for mounting small pieces to Silicon carrier wafers, or else your resist will burn! Increases thermal conduction to the cooled carrier wafer. (Full-wafers instead get direct Helium cooling.) Careful that the oil does not get anywhere near the outer clamp that holds the wafer down, or your wafer will get stuck.		* Use the Santovac oil for mounting small pieces to Silicon carrier wafers, or else your resist will burn! Increases thermal conduction to the cooled carrier wafer. (Full-wafers instead get direct Helium cooling.) Careful that the oil does not get anywhere near the outer clamp that holds the wafer down, or your wafer will get stuck.
	** The oil fully dissolves in Acetone or NMP. You can clean oil off the back by wiping the back of the sample against an ACE-soaked wipe.		** The oil fully dissolves in Acetone or NMP. You can clean oil off the back by wiping the back of the sample against an ACE-soaked wipe.
	* ~~See the~~ [[~~ICP~~ ~~Etching~~ ~~Recipes#Si~~ ~~Etching~~ ~~C4F8/SF6/CF4~~ ~~(Fluorine~~ ~~ICP~~ Etcher)\|~~'''~~Process Control Data ~~below~~''']] - ~~Staff/~~Intern-run Etches Weekly, tracked over time.		* '''[[Process Group - Process Control Data#PlasmaTherm SLR Fluorine Etcher - Process Control\|Process Control Data for this tool]]''' - [[Process Group Internships\|Intern-run Etches Weekly]], tracked over time.
			** SiO2 and Silicon etche performance is regularly tracked.
	** This tells you whether the chamber and tool are operating properly before you run your etch.		** This tells you whether the chamber and tool are operating properly before you run your etch.
	** You can follow the intern's travelers for details of their etch.		** You can follow the intern's travelers for details of their etch.
Line 203:		Line 204:
	**High selectivity to Al2O3 masks.		**High selectivity to Al2O3 masks.
	***For high aspect ratio Si etching, try [[Atomic Layer Deposition (Oxford FlexAL)\|ALD]] [[Atomic Layer Deposition Recipes#Al2O3 deposition .28ALD CHAMBER 3.29\|Al<sub>2</sub>O<sub>3</sub>]] (~20-30nm) + [[Atomic Layer Deposition Recipes#SiO2 deposition .28ALD CHAMBER 3.29\|SiO<sub>2</sub>]] (2nm, for PR adhesion) hardmasks followed by [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 Pan2 Al<sub>2</sub>O<sub>3</sub> etch] (will go straight through the thin SiO<sub>2</sub> without additional etch time). Works well for allowing thin PR's (eg. [[Stepper 3 (ASML)\|DUV]] or [[E-Beam Lithography System (JEOL JBX-6300FS)\|EBL]] PR's) to enable deep etches.		***For high aspect ratio Si etching, try [[Atomic Layer Deposition (Oxford FlexAL)\|ALD]] [[Atomic Layer Deposition Recipes#Al2O3 deposition .28ALD CHAMBER 3.29\|Al<sub>2</sub>O<sub>3</sub>]] (~20-30nm) + [[Atomic Layer Deposition Recipes#SiO2 deposition .28ALD CHAMBER 3.29\|SiO<sub>2</sub>]] (2nm, for PR adhesion) hardmasks followed by [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 Pan2 Al<sub>2</sub>O<sub>3</sub> etch] (will go straight through the thin SiO<sub>2</sub> without additional etch time). Works well for allowing thin PR's (eg. [[Stepper 3 (ASML)\|DUV]] or [[E-Beam Lithography System (JEOL JBX-6300FS)\|EBL]] PR's) to enable deep etches.
	**[[ICP Etching Recipes#Si Etching C4F8/SF6/CF4 (Fluorine ICP Etcher)\|Process Control Data ~~above~~]] - Staff/Intern-run Etches Weekly, tracked over time.		**[[ICP Etching Recipes#Process Control: Si Etching C4F8/SF6/CF4 (Fluorine ICP Etcher)\|Process Control Data below]] - Staff/Intern-run Etches Weekly, tracked over time (with no BARC layer).
	*Old Recipe: [//wiki.nanotech.ucsb.edu/wiki/images/b/b8/SLR_-_SiVertHF.pdf SiVertHF] - Si Vertical Etch using C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> and resist mask		*Old Recipe: [//wiki.nanotech.ucsb.edu/wiki/images/b/b8/SLR_-_SiVertHF.pdf SiVertHF] - Si Vertical Etch using C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> and resist mask

Process Group - Process Control Data

John d — Mon, 31 Aug 2026 17:42:10 GMT

Si Etching (FL-ICP Process Control)

← Older revision		Revision as of 17:42, 31 August 2026
Line 128:		Line 128:

	=== Si Etching (FL-ICP Process Control) ===		=== Si Etching (FL-ICP Process Control) ===
	''This Si etch is much more sensitive to chamber condition, allowing us to detect ~~chamber~~ ~~contamination~~ faster.''		''This Si etch is much more sensitive to chamber condition, allowing us to detect tool issues faster.''

	*'''Recipe: [[ICP Etching Recipes#Si Etch Recipes (Fluorine ICP Etcher)\|SiVertHFv2]]''' - C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> etch of 100mm Silicon Wafer with ~50% open area and resist mask		*'''Recipe: [[ICP Etching Recipes#Si Etch Recipes (Fluorine ICP Etcher)\|SiVertHFv2]]''' - C<sub>4</sub>F<sub>8</sub>/SF<sub>6</sub>/CF<sub>4</sub> etch of 100mm Silicon Wafer with ~50% open area and resist mask

PECVD 1 (PlasmaTherm 790)

Barreraz — Thu, 27 Aug 2026 19:22:15 GMT

About

← Older revision		Revision as of 19:22, 27 August 2026
Line 18:		Line 18:
	'''Films:''' This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, or SiO<sub>x</sub>N<sub>y</sub> dielectric films.		'''Films:''' This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, or SiO<sub>x</sub>N<sub>y</sub> dielectric films.

	'''Hardware:''' The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250~~-350~~°C ~~(250°C is standard)~~.		'''Hardware:''' The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250°C.

	'''Gases:'''		'''Gases:'''
Line 36:		Line 36:
	SiO<sub>2</sub> is produced from SiH<sub>4</sub>/He 2%/98% and N<sub>2</sub>O at 250°C. The typical deposition rate is 400 Å/min at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min.		SiO<sub>2</sub> is produced from SiH<sub>4</sub>/He 2%/98% and N<sub>2</sub>O at 250°C. The typical deposition rate is 400 Å/min at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min.

	Si<sub>3</sub>N<sub>4</sub> is produced from SiH<sub>4</sub>/He 2%/98% and NH<sub>3</sub> at 250~~°C or 350°C. The more dense films are produced at 350~~°C. The stress of the nitride can be altered by adjusting the N<sub>2</sub>:He ratio of the deposition.		Si<sub>3</sub>N<sub>4</sub> is produced from SiH<sub>4</sub>/He 2%/98% and NH<sub>3</sub> at 250°C. The stress of the nitride can be altered by adjusting the N<sub>2</sub>:He ratio of the deposition.

	'''Applications:''' These films are typically used for reactive ion etching masks, electrical insulators, chemical passivation layers, optical anti-reflective coatings and capacitor dielectrics. The system is fully programmable with windows-based software.		'''Applications:''' These films are typically used for reactive ion etching masks, electrical insulators, chemical passivation layers, optical anti-reflective coatings and capacitor dielectrics. The system is fully programmable with windows-based software.

Stocked Chemical List

John d — Mon, 24 Aug 2026 16:26:17 GMT

removed Honeywell SOG

← Older revision		Revision as of 16:26, 24 August 2026
Line 466:		Line 466:
	\|BREWER SCIENCE, INC		\|BREWER SCIENCE, INC
	\|Photoresist, PR, BARC		\|Photoresist, PR, BARC
	\|-
	\|Honeywell 512B spin-on-glass, 125 ml.
	\|ACCUGLASS 512B SPIN-ON GLASS
	\|HONEYWELL ANALYTICS INC.
	\|SOG
	\|-		\|-
	\|UVN 30-0.8L (UVN 2300-0.5)		\|UVN 30-0.8L (UVN 2300-0.5)

Lithography Recipes

John d — Mon, 24 Aug 2026 16:24:38 GMT

Chemicals Stocked + Datasheets: removed honewell SOG

← Older revision		Revision as of 16:24, 24 August 2026
Line 1,077:		Line 1,077:
	*{{fl\|BCB-adhesion.pdf\|BCB Adhesion Notes from Vendor}}		*{{fl\|BCB-adhesion.pdf\|BCB Adhesion Notes from Vendor}}
	*{{fl\|BCB-rework.pdf\|BCB rework Notes from Vendor}}		*{{fl\|BCB-rework.pdf\|BCB rework Notes from Vendor}}
	*{{fl\|512B-Datasheet-revA.pdf\|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
	*{{fl\|512B-Application-Data-Bake-revA.pdf\|Honeywell 512B Apps Data}}

	;<div id="Developers"><big>Developers</big></div>		;<div id="Developers"><big>Developers</big></div>

Template:News

John d — Sat, 22 Aug 2026 15:57:57 GMT

linked to CSMANTECH paper

← Older revision		Revision as of 15:57, 22 August 2026
Line 37:		Line 37:
	// [[User:John_d\|Demis D. John]] 19:51, 27 May 2026 (UTC)		// [[User:John_d\|Demis D. John]] 19:51, 27 May 2026 (UTC)

	===~~CSMANTECH~~ Poster: "Machine Matching Methodology for Single-shot Lab to Lab Dry Etch Process Transfer" ===		===CS MANTECH Poster: "Machine Matching Methodology for Single-shot Lab to Lab Dry Etch Process Transfer" ===
	Nanofab staff Foong Fatt, Noah Dutra and Brian Thibeault presented a poster at CS MANTECH (compound semiconductor manufacturing technology) in Portland Oregon. The paper describes using [https://www.pdf.com/products/exensio-analytics-platform/overview/ PDF Solutions Exensio analytics] to do a single-shot dry etch process transfer from the UCSB Nanofab's Oxford Cobra ICP etcher to a different-configuration ICP etcher at UC San Diego's, reproducing etch rate and sidewall profile in a single-shot. The technique used complimentary L9 DOE's at each site to map out the process space, allowing for single-shot matching.		Nanofab staff Foong Fatt, Noah Dutra and Brian Thibeault presented a poster at CS MANTECH (compound semiconductor manufacturing technology) in Portland Oregon. The paper describes using [https://www.pdf.com/products/exensio-analytics-platform/overview/ PDF Solutions Exensio analytics] to do a single-shot dry etch process transfer from the UCSB Nanofab's Oxford Cobra ICP etcher to a different-configuration ICP etcher at UC San Diego's, reproducing etch rate and sidewall profile in a single-shot. The technique used complimentary L9 DOE's at each site to map out the process space, allowing for single-shot matching. [[Media:2026_CSMANTECH_Paper-2366_-_Foong_Fatt_-_Machine_Matching_Methodology_for_Single-shot_Lab_to_Lab_Dry_Etch_Process_Transfer.pdf\|See the full paper here]].
	// [[User:John_d\|Demis D. John]] 15:53, 22 August 2026 (UTC)		// [[User:John_d\|Demis D. John]] 15:53, 22 August 2026 (UTC)

File:2026 CSMANTECH Paper-2366 - Foong Fatt - Machine Matching Methodology for Single-shot Lab to Lab Dry Etch Process Transfer.pdf

John d — Sat, 22 Aug 2026 15:55:44 GMT

John d uploaded File:2026 CSMANTECH Paper-2366 - Foong Fatt - Machine Matching Methodology for Single-shot Lab to Lab Dry Etch Process Transfer.pdf Machine Matching Methodology for Single-shot Lab to Lab Dry Etch Process Transfer Fatt Foong, Brian Thibeault, Noah Dutra, Demis D. John, Vraj Mehalana, Chandan Ramakrishnaiah, Shivakumar Bhaskaran, Jacky Tseng, Shimin Huang, Michio Aruga, Weldom Xie, Bokai Ma, Jeongho Ha, John Tamelier, Fubo Rao Conference: CS MANTECH Year: 2026 Topics Process Transfer Compound Semiconductors GaAs Design of Experiments InP Dry Etch Nanofabrication Abstract Small start-up companies benefit significantly...

New page

== Summary ==
Machine Matching Methodology for Single-shot Lab to Lab Dry Etch Process Transfer
Fatt Foong, Brian Thibeault, Noah Dutra, Demis D. John, Vraj Mehalana, Chandan Ramakrishnaiah, Shivakumar Bhaskaran, Jacky Tseng, Shimin Huang, Michio Aruga, Weldom Xie, Bokai Ma, Jeongho Ha, John Tamelier, Fubo Rao

Conference: CS MANTECH

Year: 2026

Topics

Process Transfer
Compound Semiconductors
GaAs
Design of Experiments
InP
Dry Etch
Nanofabrication
Abstract

Small start-up companies benefit significantly from leveraging low-cost, quick-turnaround university nanofabrication facilities for developing next-generation compound semiconductor devices and prototypes. This paper presents a methodology for establishing dry etch process transfer between different fabrication facilities using machine matching and complementary design of experiments, demonstrating successful transfer of etch recipes across different systems.

Template:News

John d — Sat, 22 Aug 2026 15:53:28 GMT

added csmantech paper

← Older revision		Revision as of 15:53, 22 August 2026
(3 intermediate revisions by the same user not shown)
Line 16:		Line 16:
	<!---------------------------------------------->		<!---------------------------------------------->
	<!-------- NEWS ITEMS: newest on top -------->		<!-------- NEWS ITEMS: newest on top -------->
			=== "Make Microchips!" - new book by Nanofab staff ===
			Nanofab staff [[Demis D. John]] published an intro-level book for people wanting to learn about making microchips, it is [https://www.amazon.com/dp/B0HDRHG3KM available now]. The book compliments the [https://nanofab.ucsb.edu/workforce#bootcamps Cleanroom Bootcamps] and other [https://nanofab.ucsb.edu/workforce workforce development efforts] Demis has launched, to help people get into the semiconductor industry.
			// [[User:John_d\|Demis D. John]] 15:30, 22 August 2026 (UTC)

			=== Carpinteria Highschool does Microchip Packaging ===
			The SB Chamber of Commerce sponsored Carpinteria Highschool to do microchip packaging using their machine shop in the CHIP program! Under the mentorship of Nanofab staff [[Demis D. John]] and Ben Werner from [https://www.pseudolithic.com/ PseudolithIC], 3 student teams designed the microchip packaging for micro-pressure sensors, MEMS chips made during the [https://nanofab.ucsb.edu/workforce#bootcamps CC-PRIME cleanroom bootcamps]. The SBSC Chamber released [https://sbscchamber.com/chip/ a video about the program here], you can learn more [https://innovation.ucsb.edu/blog/news/ucsb-partnership-opens-doors-semiconductor-careers-high-school-students at this article].
			// [[User:John_d\|Demis D. John]] 10:00, 13 August 2026 (UTC)

	=== Raith PicoMaster Direct-Write Installed ===		=== Raith PicoMaster Direct-Write Installed ===
	We have installed a new H-Line (405nm) Direct-write tool: The [[Maskless_Aligner_(Raith_PicoMaster_XF)]]. The new tool is currently undergoing staff qualifications and we are developing operating procedures. // [[User:John_d\|Demis D. John]] 19:02, 18 July 2026 (UTC)		We have installed a new H-Line (405nm) Direct-write tool: The [[Maskless_Aligner_(Raith_PicoMaster_XF)]]. The new tool is currently undergoing staff qualifications and we are developing operating procedures. // [[User:John_d\|Demis D. John]] 19:02, 18 July 2026 (UTC)
Line 28:		Line 36:
	Contact the Protofab lab manager [mailto:arin_abed@ucsb.edu Arin Abed] for more information.		Contact the Protofab lab manager [mailto:arin_abed@ucsb.edu Arin Abed] for more information.
	// [[User:John_d\|Demis D. John]] 19:51, 27 May 2026 (UTC)		// [[User:John_d\|Demis D. John]] 19:51, 27 May 2026 (UTC)

			===CSMANTECH Poster: "Machine Matching Methodology for Single-shot Lab to Lab Dry Etch Process Transfer" ===
			Nanofab staff Foong Fatt, Noah Dutra and Brian Thibeault presented a poster at CS MANTECH (compound semiconductor manufacturing technology) in Portland Oregon. The paper describes using [https://www.pdf.com/products/exensio-analytics-platform/overview/ PDF Solutions Exensio analytics] to do a single-shot dry etch process transfer from the UCSB Nanofab's Oxford Cobra ICP etcher to a different-configuration ICP etcher at UC San Diego's, reproducing etch rate and sidewall profile in a single-shot. The technique used complimentary L9 DOE's at each site to map out the process space, allowing for single-shot matching.
			// [[User:John_d\|Demis D. John]] 15:53, 22 August 2026 (UTC)

	===DREAMS Hub awarded 2 projects in GaN and 5G/6G technologies===		===DREAMS Hub awarded 2 projects in GaN and 5G/6G technologies===

CAIBE (Oxford Ion Mill)

John d — Fri, 21 Aug 2026 15:46:00 GMT

Detailed Specifications: moves Smaple Saizes to it's own section

← Older revision		Revision as of 15:46, 21 August 2026
(One intermediate revision by the same user not shown)
Line 37:		Line 37:
	*He-backside cooling		*He-backside cooling
	*Substrate temperature 5C to 300C		*Substrate temperature 5C to 300C
⚫	*Sample sizes:
	**6" wafer (no carrier needed)
⚫	**4" wafer mount with backside Helium cooling ports
⚫	**2" wafer mount with backside Helium cooling ports
⚫	**35mm square pieces or smaller, mount with backside Helium cooling ports
	*Clustered through vacuum chambers with ALD systems.		*Clustered through vacuum chambers with ALD systems.
	*Masking material depends on material being etched and etch gas used		*Masking material depends on material being etched and etch gas used

		⚫	=== Sample sizes: ===
			We have metal carriers with metal clips and holes for Helium backside cooling make, with various '''''sample-pocket sizes''''':
		⚫	*4" wafer mount with backside Helium cooling ports
		⚫	*2" wafer mount with backside Helium cooling ports
		⚫	*35 mm square pieces or smaller, mount with backside Helium cooling ports
			*Everything is loaded onto 6" metal carriers - Full 6-inch wafers can not be used on the tool at this time.
			Smaller sample sizes generally will work fine, it is recommended to block all unused Helium cooling holes for the best sample cooling.

	==Recipes==		==Recipes==

Process Group Interns

Noahdutra — Tue, 18 Aug 2026 17:42:21 GMT

Alumni

@@ Line 28: / Line 28: @@
 |PECVD Dep, Dry Etch/SEM, Litho
 |Fall 2025–present
 |}
@@ Line 47: / Line 37: @@
 ! align="center" bgcolor="#D0E7FF" width="150" |'''Tasks'''
 !Semesters
 |-
 |Ana Jevremoviç

← Older revision		Revision as of 19:41, 9 September 2026
Line 6:		Line 6:
	** https://signupmonkey.ece.ucsb.edu\|Equipment Signup		** https://signupmonkey.ece.ucsb.edu\|Equipment Signup
	** Chemical List\|Chemicals + MSDS		** Chemical List\|Chemicals + MSDS
	** https://protofab.oasis.ucsb.edu\|-- Protofab --		** https://protofab.oasis.ucsb.edu\|Protofab
	* Equipment		* Equipment
	** Tool List\|Full Tool List		** Tool List\|Full Tool List