ASML Stepper 3 Dicing Guide Programming - Revision history

John d: Update: state doesn’t work and workaround.

2021-01-30T18:07:38Z

Update: state doesn’t work and workaround.

← Older revision		Revision as of 18:07, 30 January 2021
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	<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>		<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>
			UPDATE: doesn’t work: Ning tried this and found these patterns were too difficult to see on the disconfirm saw. Demis: new method, use ASML’s Alignment Mark distribution function to use SPM-X/Y marks as dicing guides. Carefully not to distribute too many - there is a software limit on number of exposures per Image.
	* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable and visible during dicing. There are both positive and negative versions of the Cross pattern.		* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable and visible during dicing. There are both positive and negative versions of the Cross pattern.
	* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:		* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:

John d: Added negative PR image

2018-08-06T06:40:14Z

Added negative PR image

← Older revision		Revision as of 06:40, 6 August 2018
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	<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>		<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>
	* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) ~~on '''positive PR'''~~ would be acceptable and visible during dicing.		* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable and visible during dicing. There are both positive and negative versions of the Cross pattern.
	* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:		* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:
	** Reticle ID: "'''UCSB-OPC1'''" (hyphenated)		** Reticle ID: "'''UCSB-OPC1'''" (hyphenated)
			** For <u>Positive PR image</u>:
⚫	** Image ~~Size~~ (Wafer): X = 0.~~90000~~; Y = 0.~~90000~~ mm
	** Image ~~Shift~~ (Wafer): X = -6.~~750000~~; Y= -9.~~450000~~ mm		*** Image Size (Wafer): X = 0.90000; Y = 0.90000 mm
		⚫	*** Image Shift (Wafer): X = -6.750000; Y= -9.450000 mm
	** [[File:UCSB Dicing Guides - IMG 1199 annotated.jpg\|alt=ASML Programming: Image Definition Screen\|none\|thumb\|400x400px\|ASML Programming: Image Definition Screen]][[File:UCSB Dicing Guides - Image Location on Reticle - 800px.png\|alt=Image Definition: Resulting location on Reticle screenshot\|none\|thumb\|400x400px\|Image Definition: Location on Reticle]]		*** [[File:UCSB Dicing Guides - IMG 1199 annotated.jpg\|alt=ASML Programming: Image Definition Screen\|none\|thumb\|400x400px\|ASML Programming (Positive PR) Image Definition Screen]][[File:UCSB Dicing Guides - Image Location on Reticle - 800px.png\|alt=Image Definition: Resulting location on Reticle screenshot\|none\|thumb\|400x400px\|Image Definition (Positive PR): Location on Reticle]][[File:GlobalMulti POS - Screen Shot 2018-07-23 at 11.17.23 AM.png\|alt=Positive PR Alignment Mark schematic\|none\|thumb\|Positive PR Alignment Mark. Will center the large Cross.]]
			**For <u>Negative PR Image</u>:
			*** Image Size (wafer scale): X = 0.710000 ; Y = 0.710000 mm
			*** Image Shift (wafer scale): X = 6.750000 ; Y = -9.450000 mm[[File:GlobalMulti NEG - Screen Shot 2018-07-23 at 11.22.19 AM.png\|alt=Negative PR pattern schematic\|none\|thumb\|Negative PR pattern]]
			*** ''More info on either pattern can be [[ASML Stepper 3 - UCSB Test Reticles\|found here]].''

	* Under <code>Wafer Layout > Image Distribution</code>, add an <code>'''Image-to-Cell Shift'''</code> of '''half the die X/Y size''', and <code>Apply</code> to all die, to place the marks at the corner of every die.		* Under <code>Wafer Layout > Image Distribution</code>, add an <code>'''Image-to-Cell Shift'''</code> of '''half the die X/Y size''', and <code>Apply</code> to all die, to place the marks at the corner of every die.
	** The software will only let you place the die at the upper-right (''+X,+Y'') corner. To include the lower-left corners, you will need to make sure you enabled the <code>Wafer Layout > Cell Structure > Die Definition > # of Dies & Minimum per Cell</code> options ~~so it'll~~ shoot partial die.		** The software will only let you place the die at the upper-right (''+X,+Y'') corner. To include the lower-left corners, you will need to make sure you enabled the <code>Wafer Layout > Cell Structure > Die Definition > # of Dies & Minimum per Cell</code> options too shoot partial die at the wafer edges.
	** Make sure they don't expose over any of your other alignment marks!		** Make sure they don't expose over any of your other alignment marks!

John d: initial page, included screenshot and basic programming

2018-08-01T09:40:34Z

initial page, included screenshot and basic programming

New page

<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>
* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) on '''positive PR''' would be acceptable and visible during dicing.
* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:
** Reticle ID: "'''UCSB-OPC1'''" (hyphenated)
** Image Size (Wafer): X = 0.90000; Y = 0.90000 mm
** Image Shift (Wafer): X = -6.750000; Y= -9.450000 mm
** [[File:UCSB Dicing Guides - IMG 1199 annotated.jpg|alt=ASML Programming: Image Definition Screen|none|thumb|400x400px|ASML Programming: Image Definition Screen]][[File:UCSB Dicing Guides - Image Location on Reticle - 800px.png|alt=Image Definition: Resulting location on Reticle screenshot|none|thumb|400x400px|Image Definition: Location on Reticle]]

* Under <code>Wafer Layout > Image Distribution</code>, add an <code>'''Image-to-Cell Shift'''</code> of '''half the die X/Y size''', and <code>Apply</code> to all die, to place the marks at the corner of every die.
** The software will only let you place the die at the upper-right (''+X,+Y'') corner. To include the lower-left corners, you will need to make sure you enabled the <code>Wafer Layout > Cell Structure > Die Definition > # of Dies & Minimum per Cell</code> options so it'll shoot partial die.
** Make sure they don't expose over any of your other alignment marks!

* [[File:UCSB Dicing Guides - Die Location - 800px.png|alt=Screenshot fo resulting die location|none|thumb|400x400px|Image Distribution: Example dicing mark locations, using Image-to-Cell Shift to place die at corners. ]]