Ashers (Technics PEII) - Revision history

John d: /* Recipes */ link to recipes page, deleted recipes form this page

2022-11-11T20:06:31Z

Recipes: link to recipes page, deleted recipes form this page

← Older revision		Revision as of 20:06, 11 November 2022
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	==Recipes==		==Recipes==

			*'''Oxygen Plasma recipes > [[Oxygen Plasma System Recipes#Ashers .28Technics PEII.29\|<u>Ashers (Technics PEii)</u>]]'''
	*Typical process conditions:
	**'''Ashing''': O2 300mT, 100W power, 30 sec up to 5 min. Make surface hydrophilic: same as above, 15-30sec
	**'''Si3N4 Etching''': CF<sub>4</sub>/O<sub>2</sub> 300mT, 100W, ~ 100–150 nm / min. etch rate

Silva at 17:50, 30 August 2022

2022-08-30T17:50:47Z

← Older revision		Revision as of 17:50, 30 August 2022
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	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=Ashers.jpg		\|picture=Ashers.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Mike Day		\|super= Mike Day
			\|super2= Tony Bosch
	\|location=Bay 5		\|location=Bay 5
	\|description = Plasma Etching Systems		\|description = Plasma Etching Systems

John d: /* Detailed Specifications */

2022-07-19T23:25:13Z

Detailed Specifications

← Older revision		Revision as of 23:25, 19 July 2022
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	Low-temp (energy comes from ion acceleration, not temperature).		Low-temp (energy comes from ion acceleration, not temperature).

	=== Applications ===		===Applications===
	Use this for situation where the material to be removed is resistant to chemicals (fluorocarbon polymers - think "plastic") and/or relatively hard (chlorinated PR, after a CL2/BCl2 etch), so physical bombardment is necessary to break up the material, or if high-temp is not acceptable. Typical times: ~2min and microscope inspect and repeat.		Use this for situation where the material to be removed is resistant to chemicals (fluorocarbon polymers - think "plastic") and/or relatively hard (chlorinated PR, after a CL2/BCl2 etch), so physical bombardment is necessary to break up the material, or if high-temp is not acceptable. Typical times: ~2min and microscope inspect and repeat.

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	*Gases used: CF<sub>4</sub> / O<sub>2</sub> (88%/12%) and O<sub>2</sub>		*Gases used: CF<sub>4</sub> / O<sub>2</sub> (88%/12%) and O<sub>2</sub>
	*~ 10mT ultimate chamber pressure		*~ 10mT ultimate chamber pressure
	*100 kHz directly coupled excitation source		*100 kHz (low frequency) directly coupled excitation source
	*Sample size: pieces to 6” wafers		*Sample size: pieces to 6” wafers
	*Gas flow and power control		*Gas flow and power control

	== Recipes ==		==Recipes==

	*Typical process conditions:		*Typical process conditions:
	**Ashing: O2 300mT, 100W power, 30 sec up to 5 min. Make surface hydrophilic: same as above, 15-30sec		**'''Ashing''': O2 300mT, 100W power, 30 sec up to 5 min. Make surface hydrophilic: same as above, 15-30sec
	**Si3N4 Etching: CF<sub>4</sub>/O<sub>2</sub> 300mT, 100W, ~ 100–150 nm / min. etch rate		**'''Si3N4 Etching''': CF<sub>4</sub>/O<sub>2</sub> 300mT, 100W, ~ 100–150 nm / min. etch rate

John d: Added recipes, updated applications with times.

2022-06-16T02:05:02Z

Added recipes, updated applications with times.

← Older revision		Revision as of 02:05, 16 June 2022
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	}}		}}

	= About =		=About=

	These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si<sub>3</sub>N<sub>4</sub> films. The systems are both equipped with O<sub>2</sub> for organic removal / surface activation.		These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si<sub>3</sub>N<sub>4</sub> films. The systems are both equipped with O<sub>2</sub> for organic removal / surface activation.
Line 16:		Line 16:
	One system also has CF<sub>4</sub>/O<sub>2</sub> 88% / 12% for etching Si<sub>3</sub>N<sub>4</sub>. These systems are operated manually and no sign-up is required.		One system also has CF<sub>4</sub>/O<sub>2</sub> 88% / 12% for etching Si<sub>3</sub>N<sub>4</sub>. These systems are operated manually and no sign-up is required.

	=== ~~Applications~~ ===		===Mechanism===
	This is an RIE etch with O2 - using plasma ion bombardment, in a semi-vertical direction (although the higher 300mT pressure does attack sidewalls somewhat).		This is a low-frequency RIE etch with O2 - using plasma ion bombardment, in a semi-vertical direction (although the higher 300mT pressure does attack sidewalls somewhat). The low kHz frequency allows ion to move with the RF, providing higher ion bombardment

	Low-temp (energy comes from ion acceleration, not temperature).		Low-temp (energy comes from ion acceleration, not temperature).

			=== Applications ===
	Use this for situation where the material to be removed is resistant to chemicals (fluorocarbon polymers - think "plastic") and/or relatively hard (chlorinated PR, after a CL2/BCl2 etch), so physical bombardment is necessary to break up the material, or if high-temp is not acceptable.		Use this for situation where the material to be removed is resistant to chemicals (fluorocarbon polymers - think "plastic") and/or relatively hard (chlorinated PR, after a CL2/BCl2 etch), so physical bombardment is necessary to break up the material, or if high-temp is not acceptable. Typical times: ~2min and microscope inspect and repeat.

	Stripping full-thickness PR's in the PEii is slow, at something like ~100nm/1min (at standard 100W/300mT).		Stripping full-thickness PR's in the PEii is slow, at something like ~100nm/1min (at standard 100W/300mT).

	Surface activation, eg. making the surface hydrophilic before water-based wet-etching (15sec). This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines. ~~Or to increase adhesion of the next deposition (~1min) - etch is a bit more aggressive and will go through any monolayers (organic or otherwise).~~		Surface activation, eg. making the surface hydrophilic before water-based wet-etching (15sec), or dehydration of wafer surface before HMDS application. This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines.

			Increase adhesion of the next deposition (~2-4min), for example right before loading into evaporator for lift-off. Etch is a bit more aggressive and will go through any monolayers (organic or otherwise), and possibly slightly roughen the surface

		⚫	=Detailed Specifications=

		⚫	*Gases used: CF<sub>4</sub> / O<sub>2</sub> (88%/12%) and O<sub>2</sub>
		⚫	*~ 10mT ultimate chamber pressure
		⚫	*100 kHz directly coupled excitation source
		⚫	*Sample size: pieces to 6” wafers
		⚫	*Gas flow and power control

			== Recipes ==
⚫	= Detailed Specifications =

⚫	*Gases used: CF<sub>4</sub> / O<sub>2</sub> (88%/12%) and O<sub>2</sub>
⚫	*~ 10mT ultimate chamber pressure
⚫	*100 kHz directly coupled excitation source
⚫	*Sample size: pieces to 6” wafers
⚫	*Gas flow and power control
	*Typical process conditions:		*Typical process conditions:
	**Ashing: O2 300mT, 100W power, 30 sec.		**Ashing: O2 300mT, 100W power, 30 sec up to 5 min. Make surface hydrophilic: same as above, 15-30sec
	**Si3N4 Etching: CF<sub>4</sub>/O<sub>2</sub> 300mT, 100W, ~ 100–150 nm / min. etch rate		**Si3N4 Etching: CF<sub>4</sub>/O<sub>2</sub> 300mT, 100W, ~ 100–150 nm / min. etch rate

John d: /* About */ applicaitons section

2021-06-23T17:16:23Z

About: applicaitons section

← Older revision		Revision as of 17:16, 23 June 2021
Line 12:		Line 12:
	= About =		= About =

	These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si<sub>3</sub>N<sub>4</sub> films. The systems are both equipped with O<sub>2</sub> for organic removal. ~~In addition to organic removal, the oxygen plasma is also useful for changing the~~ surface ~~polarity of organic films to facilitate wetting of water-based surface etchants~~. This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines. One system also has CF<sub>4</sub>/O<sub>2</sub> 88% / 12% for etching Si<sub>3</sub>N<sub>4</sub>. These systems are operated manually and no sign-up is required.		These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si<sub>3</sub>N<sub>4</sub> films. The systems are both equipped with O<sub>2</sub> for organic removal / surface activation.

			One system also has CF<sub>4</sub>/O<sub>2</sub> 88% / 12% for etching Si<sub>3</sub>N<sub>4</sub>. These systems are operated manually and no sign-up is required.

			=== Applications ===
			This is an RIE etch with O2 - using plasma ion bombardment, in a semi-vertical direction (although the higher 300mT pressure does attack sidewalls somewhat).

			Low-temp (energy comes from ion acceleration, not temperature).

			Use this for situation where the material to be removed is resistant to chemicals (fluorocarbon polymers - think "plastic") and/or relatively hard (chlorinated PR, after a CL2/BCl2 etch), so physical bombardment is necessary to break up the material, or if high-temp is not acceptable.

			Stripping full-thickness PR's in the PEii is slow, at something like ~100nm/1min (at standard 100W/300mT).

			Surface activation, eg. making the surface hydrophilic before water-based wet-etching (15sec). This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines. Or to increase adhesion of the next deposition (~1min) - etch is a bit more aggressive and will go through any monolayers (organic or otherwise).

	= Detailed Specifications =		= Detailed Specifications =
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	*Typical process conditions:		*Typical process conditions:
	**Ashing: O2 300mT, 100W power, 30 sec.		**Ashing: O2 300mT, 100W power, 30 sec.
	**Si3N4 Etching: CF<sub>4</sub>/O<sub>2</sub> 300mT, 100W, ~ ~~150~~ nm / min. etch rate		**Si3N4 Etching: CF<sub>4</sub>/O<sub>2</sub> 300mT, 100W, ~ 100–150 nm / min. etch rate

John d: added model to Tool panel

2020-02-11T03:03:04Z

added model to Tool panel

← Older revision		Revision as of 03:03, 11 February 2020
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	\|type = Dry Etch		\|type = Dry Etch
	\|super= Mike Day		\|super= Mike Day
	\|phone=(805)839-3101
	\|location=Bay 5		\|location=Bay 5
	\|email=day@ece.ucsb.edu
	\|description = Plasma Etching Systems		\|description = Plasma Etching Systems
	\|manufacturer = Technics		\|manufacturer = Technics
			\|model = PE II-A
	\|materials =		\|materials =
	}}		}}
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	= Detailed Specifications =		= Detailed Specifications =

	*Gases used: CF<sub>4</sub> / O<sub>2</sub> and O<sub>2</sub>		*Gases used: CF<sub>4</sub> / O<sub>2</sub> (88%/12%) and O<sub>2</sub>
	*~ 10mT ultimate chamber pressure		*~ 10mT ultimate chamber pressure
	*100 kHz directly coupled excitation source		*100 kHz directly coupled excitation source

Hopkins a at 17:49, 3 May 2019

2019-05-03T17:49:15Z

← Older revision		Revision as of 17:49, 3 May 2019
Line 3:		Line 3:
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Mike Day		\|super= Mike Day
	\|phone=(805)839-~~3918~~		\|phone=(805)839-3101
	\|location=Bay 5		\|location=Bay 5
	\|email=day@ece.ucsb.edu		\|email=day@ece.ucsb.edu

Reynolds t at 02:00, 15 June 2015

2015-06-15T02:00:03Z

← Older revision		Revision as of 02:00, 15 June 2015
Line 2:		Line 2:
	\|picture=Ashers.jpg		\|picture=Ashers.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= ~~Adam~~ ~~Abrahamsen~~		\|super= Mike Day
	\|phone=(805)839-~~3918x213~~		\|phone=(805)839-3918
	\|location=Bay 5		\|location=Bay 5
	\|email=~~abrahamsen~~@ece.ucsb.edu		\|email=day@ece.ucsb.edu
	\|description = Plasma Etching Systems		\|description = Plasma Etching Systems
	\|manufacturer = Technics		\|manufacturer = Technics

Zwarburg: Created page with "{{tool|{{PAGENAME}} |picture=Ashers.jpg |type = Dry Etch |super= Adam Abrahamsen |phone=(805)839-3918x213 |location=Bay 5 |email=abrahamsen@ece.ucsb.edu |description = Plasma Etc…"

2012-07-01T14:41:09Z

Created page with "{{tool|{{PAGENAME}} |picture=Ashers.jpg |type = Dry Etch |super= Adam Abrahamsen |phone=(805)839-3918x213 |location=Bay 5 |email=abrahamsen@ece.ucsb.edu |description = Plasma Etc…"

New page

{{tool|{{PAGENAME}}
|picture=Ashers.jpg
|type = Dry Etch
|super= Adam Abrahamsen
|phone=(805)839-3918x213
|location=Bay 5
|email=abrahamsen@ece.ucsb.edu
|description = Plasma Etching Systems
|manufacturer = Technics
|materials =
}}

= About =

These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si3N4 films. The systems are both equipped with O2 for organic removal. In addition to organic removal, the oxygen plasma is also useful for changing the surface polarity of organic films to facilitate wetting of water-based surface etchants. This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines. One system also has CF4/O2 88% / 12% for etching Si3N4. These systems are operated manually and no sign-up is required.

= Detailed Specifications =

*Gases used: CF4 / O2 and O2
*~ 10mT ultimate chamber pressure
*100 kHz directly coupled excitation source
*Sample size: pieces to 6” wafers
*Gas flow and power control
*Typical process conditions:
**Ashing: O2 300mT, 100W power, 30 sec.
**Si3N4 Etching: CF4/O2 300mT, 100W, ~ 150 nm / min. etch rate