Atomic Layer Deposition Recipes - Revision history

Mitchell b at 18:08, 5 September 2025

2025-09-05T18:08:05Z

← Older revision		Revision as of 18:08, 5 September 2025
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	==== Ozone ====		==== Ozone ====
	'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma.		'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma (which can sometimes be too aggressive).

	Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, <u>always</u> be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)\|supervisor]] for further details.		Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, <u>always</u> be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)\|supervisor]] for further details.
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	===SiO{{sub\|2}} deposition (ALD CHAMBER 1)===		===SiO{{sub\|2}} deposition (ALD CHAMBER 1)===

	Recipe name: '''''CH1-BDEAS-O/300W-~~300C~~'''''		Recipe name: '''''CH1-BDEAS-O/300W-TEMP'''''
			**Note that this recipe takes advantage of the higher-pressure range available in ch1 => faster than the lower pressure recipe available in ch3
	**SiO<sub>2</sub> deposition rate ~ 1.~~008~~ A/cyc		**SiO<sub>2</sub> deposition rate ~ 1-1.1 A/cyc
	**Similar to above TDMAS recipes, with different precursor gas.
			**TEMP = 300C (std), 250C, 230C, 200C, 150C, 120C
	**Temperature variations: ''To Be Added''
			**Etch rate (BHF:DI=1:100)~7.46nm/min
			**
			Recipe name: '''''CH1-BDEAS-O/300W[LoP]-TEMP'''''
			**replicates the (lower pressure) deposition conditions in ch3 for those that need it
		⚫	**SiO<sub>2</sub> deposition rate ~ 0.9-1 A/cyc
			**TEMP = 300C (std), 200C, 120C
	**Etch rate (BHF:DI=1:100)~7.46nm/min		**Etch rate (BHF:DI=1:100)~7.46nm/min

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	*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''		*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
	**''The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''		**''The recipe has TWO nested loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.''
	*Al dose fraction = 5% for lowest resistivity		*Al dose fraction = 5% for lowest resistivity (loops: 1 TMA=Al loop per 19 DEX=Zn loops)
	*ZnO deposition rate ~ 1.7A/cyc		*ZnO deposition rate ~ 1.7A/cyc
	*resistivity ~ 4200uOhm.cm (390A film)		*resistivity ~ 4200uOhm.cm (390A film)

	==Oxford FlexAL Chamber #3: Dielectrics==		==Oxford FlexAL Chamber #3: Dielectrics==
			Unlike Chamber 1, Chamber 3 is restricted to a lower pressure range below 240 mTorr for all deposition steps.

	'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg\|Tool Supervisor]] if needed.)		'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg\|Tool Supervisor]] if needed.)

	===Al{{sub\|2}}O{{sub\|3}} deposition (ALD CHAMBER 3)===		===Al{{sub\|2}}O{{sub\|3}} deposition (ALD CHAMBER 3)===

	*Recipe name: '''''CH3-TMA+H2O-<u>~~300C~~</u>''''' ("Thermal")		*Recipe name: '''''CH3-TMA+H2O-<u>TEMP</u>''''' ("Thermal")
			**The proto-typical ALD recipe developed back in the 70's exhibiting perfect Lewis acid/base self-limiting surface reactions!
	**300°C Dep., Thermal Water reaction
		⚫	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.1-1.2 A/cyc
	**This is considered the standard recipe for ALD
			**TEMP = 300C (std), 250C, 200C, 150C, 120C
⚫	**Al<sub>2~~</sub>O<sub>3~~</sub> deposition rate ~ 1~~.192~~ A/cyc
			**
	*Recipe ~~name~~: '''''CH3-TMA+~~H2O-<u>250C<~~/u>''''' ("~~Thermal~~")		Recipe Name: '''''CH3-TMA+250W/O-TEMP''''' ("Plasma")
⚫	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.~~214~~ A/cyc
		⚫	*Activated O Plasma reaction instead of H2O => non-thermal
	*Recipe name: '''''CH3-TMA+H2O-<u>200C</u>''''' ("Thermal")
	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.184 A/cyc
	**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''
	Recipe Name: '''''CH3-TMA+250W/O-300C''''' ("Plasma")
⚫	**~~Oxygen~~ Plasma reaction instead of H2O
	**Lower carbon content		**Lower carbon content
	**Approx. <u>1.5–2x faster deposition rate</u> than thermal.		**Approx. <u>1.5–2x faster deposition rate</u> than thermal.
	**~~Temperature variations:~~ 300°C (std.), ~~'''~~200°C, 120°C~~'''~~		**TEMP= 300°C (std.), 200°C, 120°C
			**
	*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")		*Recipe Name: '''''CH3-TMA+O3/200mT-300C''''' ("Ozone")
	**Similar dep. rate		**Similar dep. rate
	**Ozone (O<sub>3</sub>) reactant, experimental		**Ozone (O<sub>3</sub>) reactant, experimental
	**Requires Ozone generator to be turned on - ~~ask~~ supervisor		**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

	===AlN deposition (ALD CHAMBER 3)===		===AlN deposition (ALD CHAMBER 3)===
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	===HfO{{sub\|2}} deposition (ALD CHAMBER 3)===		===HfO{{sub\|2}} deposition (ALD CHAMBER 3)===

	*Recipe name: '''''CH3-TEMAH+H2O-~~300C~~''''' ("Thermal")		*Recipe name: '''''CH3-TEMAH+H2O-TEMP''''' ("Thermal")
	**HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc		**HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc, n[632nm]~2.0-2.1
	**Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.		**Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
	**~~Temperature variations:~~ 300°C (std.), 250°C, 200°C, 150°C, 120°C		**TEMP= 300°C (std.), 250°C, 200°C, 150°C, 120°C
	Recipe name: '''''CH3-TEMAH+250W/O-300C''''' ("Plasma")		Recipe name: '''''CH3-TEMAH+250W/O-300C''''' ("Plasma")
	**Uses Oxygen plasma reactant instead of H<sub>2</sub>O		**Uses Oxygen plasma reactant instead of H<sub>2</sub>O
			**
	*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")		*Recipe name: '''''CH3-TEMAH+O3/100mT-300C''''' ("Ozone")
	**Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O		**Uses Ozone (O<sub>3</sub>) for reactant instead of H<sub>2</sub>O
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	*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")		*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
	*Uses Ozone (O<sub>3</sub>) for reactant instead of O plasma - still under development!		*Uses Ozone (O<sub>3</sub>) for reactant instead of O plasma - still under development!
	**Requires Ozone generator to be turned on - ~~ask~~ supervisor		**Requires Ozone generator to be turned on - refer to notes above about the O3 generator. Need to consult with tool supervisor before first run!

	===ZrO{{sub\|2}} deposition (ALD CHAMBER 3)===		===ZrO{{sub\|2}} deposition (ALD CHAMBER 3)===

Mitchell b at 17:52, 5 September 2025

2025-09-05T17:52:47Z

← Older revision		Revision as of 17:52, 5 September 2025
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	===SiO{{sub\|2}} deposition (ALD CHAMBER 1)===		===SiO{{sub\|2}} deposition (ALD CHAMBER 1)===

⚫	Recipe name: '''''CH3-~~TDMAS~~+~~250W~~/O-300C''''' ~~("Plasma")~~
	**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
⚫	*Recipe utilizes an O plasma @ ~~250W~~, ~~5mTorr~~ pressure~~, 300°C Temp~~.
⚫	*~~Temperature variations:~~ 300C (std.)~~, 250°C~~, 200°C, 120°C
	Recipe name: '''''CH1-BDEAS-O/300W-300C'''''		Recipe name: '''''CH1-BDEAS-O/300W-300C'''''
	**SiO<sub>2</sub> deposition rate ~ 1.008 A/cyc		**SiO<sub>2</sub> deposition rate ~ 1.008 A/cyc
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	===AlN deposition (ALD CHAMBER 3)===		===AlN deposition (ALD CHAMBER 3)===

	Recipe name: '''''CH3-TMA+~~100W~~/N-~~300C~~'''''		Recipe name: '''''CH3-TMA+500W/N-TEMP'''''
	**AlN deposition rate ~ t.b.d.		**AlN deposition rate ~ t.b.d.
		⚫	*Recipe utilizes a N plasma @ 100W, 20mTorr pressure.
		⚫	*TEMP= 300°C Dep. (std.), 200C, 120°C
			**
		⚫	Recipe name: '''''CH3-TMA+100W/N-300C'''''
			**a cleaning/passivation process for III/V semiconductor surfaces prior to dielectric (gate) deposition
	*Recipe utilizes a N plasma @ 100W, 20mTorr pressure.		*Recipe utilizes a N plasma @ 100W, 20mTorr pressure.
	*Temperature Variations: 300°C Dep. (std.), 200C, 120°C		*Temperature Variations: 300°C Dep. (std.), 200C, 120°C
			**
	**Power variations: 300W, 400W (at 300°C)
	*Nitrogen/Hydrogen variations: "30N/30H" at 200C and 300°C

	===HfO{{sub\|2}} deposition (ALD CHAMBER 3)===		===HfO{{sub\|2}} deposition (ALD CHAMBER 3)===
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	===SiO{{sub\|2}} deposition (ALD CHAMBER 3)===		===SiO{{sub\|2}} deposition (ALD CHAMBER 3)===

	Recipe name: '''''CH3-~~TDMAS~~+~~250W~~/O-<u>~~300C~~</u>''''' ("Plasma")		Recipe name: '''''CH3-BDEAS+300W/O-<u>TEMP</u>''''' ("Plasma")
	**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc		**SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
	*Recipe utilizes an O plasma @ ~~250W~~, ~~5mTorr~~ ~~pressure~~, ~~300°C~~ ~~Temp.~~		*Recipe utilizes an O plasma @ 40sccm O2, 300W ICP, 10mTorr pressure,
	**~~Temperature~~ ~~variations:~~ <u>300°C</u> (std.), 250°C, 230°C, 220°C, 200~~°C, 175~~°C, 150°C, 120°C		**TEMP = <u>300°C</u> (std.), 250°C, 230°C, 220°C, 200°C, 150°C, 120°C
	*Recipe name: '''''CH3-~~TDMAS~~+O3~~/200mT~~-300C''''' ("Ozone")		*Recipe name: '''''CH3-BDEAS+O3-300C''''' ("Ozone")
	**Uses Ozone (O<sub>3</sub>) for reactant instead of ~~H<sub>2</sub>~~O		*Uses Ozone (O<sub>3</sub>) for reactant instead of O plasma - still under development!
	**Requires Ozone generator to be turned on - ask supervisor		**Requires Ozone generator to be turned on - ask supervisor

Mitchell b: /* Plasma */

2025-05-24T00:16:27Z

Plasma

← Older revision		Revision as of 00:16, 24 May 2025
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	'''''O''''' or '''''N''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.		'''''O''''' or '''''N''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

	The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive. Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.		The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive (which can be a drawback if depositing on a sensitive substrate). Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

	==== Ozone ====		==== Ozone ====
	'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma.		'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma.

	Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, <u>always</u> be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)\|supervisor]] for further details.		Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, <u>always</u> be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and/or the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)\|supervisor]] for further details.

	==Chamber #1: Conductive Films==		==Chamber #1: Conductive Films==
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	**300°C Dep., Thermal Water reaction		**300°C Dep., Thermal Water reaction
	**This is considered the standard recipe for ALD		**This is considered the standard recipe for ALD
	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1~~.265~~ A/cyc		**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1 A/cyc
	**Recipe variations: ''TBD''		**Recipe variations: ''TBD''

Mitchell b: /* Chamber #1: Conductive Films */

2025-05-24T00:03:02Z

Chamber #1: Conductive Films

← Older revision		Revision as of 00:03, 24 May 2025
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	=[[Atomic Layer Deposition (Oxford FlexAL)]]=		=[[Atomic Layer Deposition (Oxford FlexAL)]]=

	==~~What is~~ Atomic Layer Deposition - aka ALD?==		==Atomic Layer Deposition (aka ALD) - what is it?==
	Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.		Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure within each half-cycle leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

	In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.		In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

	By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg\|Tool Supervisor]] if needed).		By nature of the deposition process, the reactions are slow. <u>Hence, users are restricted to 30 nm maximum thickness for all films when using the tool.</u> Any deviations from this requirement needs special permission (contact [[Brian Lingg\|Tool Supervisor]] if needed).

	== Process Options ==		== Process Options ==
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	==Chamber #1: Conductive Films==		==Chamber #1: Conductive Films==
		⚫	Chamber 1 utilizes a dual manometer system that allows higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allow the use of less reactive organo-metallic precursors to effect ALD growth in a reasonable time-frame.
	'''Chamber 1 utilizes a dual manometer system that allows
⚫	higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures ~~allows~~ the use of less reactive organo-metallic precursors to effect growth in a reasonable time-frame.~~'''~~

	'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg\|Tool Supervisor]].		'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg\|Tool Supervisor]].

Mitchell b: /* Ozone */

2025-05-23T23:59:14Z

Ozone

← Older revision		Revision as of 23:59, 23 May 2025
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	==== Ozone ====		==== Ozone ====
	'''''O3''''' in the recipe title refers to an oxidation reaction that uses ~~the~~ external Ozone generator for ~~deposition~~. Ozone is an ~~active~~ form of oxygen that can be used to generate oxide films in a more thermal manner than plasma.		'''''O3''''' in the recipe title refers to an oxidation reaction that uses an external Ozone generator for oxide growth (InUSA, Series 5000). Ozone is a more reactive form of oxygen than O2 that can be used to generate oxide films in a more thermal manner than plasma.

	Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. ~~Click~~ on the Start Generator button to start the ~~system~~. Wait for about 5 minutes for the system to stabilize. When done, click on the Stop Generator button to turn off the O3 source. O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)\|supervisor]] for further details.		Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Clicking on the "Start Generator" button will start the ozone generator running. Wait for about 5 minutes for the system to stabilize. When done, <u>always</u> be sure to click on the "Stop Generator" button to turn off the generator and stop the O2 flow - it is very important not to forget to do this as the source could be burned out and the O2 bottle supplying the generator could be depleted if it runs too long! O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)\|supervisor]] for further details.

			==Chamber #1: Conductive Films==
	===Varying Atomic Ratios===
			'''Chamber 1 utilizes a dual manometer system that allows
	For some recipes such as TiN, there are two loops in the recipe. The outermost loop controls the total thickness of the film, the inner loop controls the ratio between the two elements. Contact the superviosr for more detailed info.
			higher pressures during deposition than chamber 3. For example, chamber 1 has an upper limit of 2000 mTorr whereas chamber 3 has an upper limit of only 240 mTorr. The higher pressures allows the use of less reactive organo-metallic precursors to effect growth in a reasonable time-frame.'''

			'''Maximum 30nm deposition thickness for all processes in chamber 1! Any depositions outside this maximum are prohibited unless discussed first with the''' [[Brian Lingg\|Tool Supervisor]].
	==Oxford FlexAL Chamber #1: Metals==
	'''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg\|Tool Supervisor]] if needed.)

	===Al{{sub\|2}}O{{sub\|3}} deposition (ALD CHAMBER 1)===		===Al{{sub\|2}}O{{sub\|3}} deposition (ALD CHAMBER 1)===

Mitchell b: /* Temperature */

2025-05-23T22:26:00Z

Temperature

← Older revision		Revision as of 22:26, 23 May 2025
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	=[[Atomic Layer Deposition (Oxford FlexAL)]]=		=[[Atomic Layer Deposition (Oxford FlexAL)]]=

	==What is ALD?==		==What is Atomic Layer Deposition - aka ALD?==
	Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.		Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

Line 9:		Line 9:
	By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg\|Tool Supervisor]] if needed).		By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg\|Tool Supervisor]] if needed).

	== ~~ALD~~ Process Options ==		== Process Options ==

	===~~Temperature~~===		===Thermal ALD===
			In all ALD processes used in our lab, the organometallic half-cycle is always thermal, i.e., the precursor is exposed to the substrate as a vapor. In a fully thermal ALD process, the counter reactant half-cycle also utilizes gas exposure to the substrate. Because the intact molecules are less reactive than activated gases from a plasma, thermal ALD can be on the slower side. One advantage however is this lower reactivity means that the substrate itself can remain inert to the deposition process.
	"Thermal" ALD, considered the most standard process. Can be slower due to time for reaction to proceed.

			===Activated ALD===
	''To Be Added: effect of varying temeprature''

	===Plasma===		==== Plasma ====
	'''''O''''' or '''''N''''' ~~mean~~ Oxygen/Nitrogen plasma, respectively.		'''''O''''' or '''''N''''' in the recipe title means Oxygen or Nitrogen plasma, derived from flowing O2 or N2 gases through the ICP tube at the top of the chamber, respectively.

	The plasma processes on this tool will run considerably faster than purely thermal ~~proceses~~, because the ~~reaction~~ ~~time~~ is ~~faster~~. ~~Also,~~ the O* plasma ~~may~~ reduce carbon contaminants from the organic precursors.		The plasma processes on this tool will run considerably faster than purely thermal processes, because the ions/radicals formed are significantly more reactive. Note that the O* plasma can also reduce carbon contaminants from the organic precursors when forming oxide films. When growing nitride films, H2 is often added to the nitride-plasma gases to generate H* ions/radicals which can assist with the removal of C within the film.

		⚫	==== Ozone ====
	The drawback is that the plasma shutter, which opens/closes between plasma steps, gets coated in materials and can cause higher particle counts. We have attempted to remedy this by keeping the plasma shutter open during all recipes.
			'''''O3''''' in the recipe title refers to an oxidation reaction that uses the external Ozone generator for deposition. Ozone is an active form of oxygen that can be used to generate oxide films in a more thermal manner than plasma.

			Note that the generator must first be turned on prior to running any ozone-based recipe. Clicking on the O3 Generator icon on the tool desktop will open the control window. Both the O2 flow and the O3 concentration should be set to the defaults of 250 sccm and 19 wt% in the field settings. Click on the Start Generator button to start the system. Wait for about 5 minutes for the system to stabilize. When done, click on the Stop Generator button to turn off the O3 source. O2 will remain flowing for an additional minute to flush out any residual O3. Once that is completed, you can close the window. Check with [[Atomic Layer Deposition (Oxford FlexAL)\|supervisor]] for further details.
⚫	===Ozone===
	'''''O3''''' indicates a recipe using the Ozone generator for reaction. This Ozone-generator must be manually turned on before running the recipe - check with [[Atomic Layer Deposition (Oxford FlexAL)\|supervisor]] for details.

	''More info to be added''

	===Varying Atomic Ratios===		===Varying Atomic Ratios===

Mitchell b: /* Temperature */

2025-05-23T22:20:30Z

Temperature

← Older revision		Revision as of 22:20, 23 May 2025
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	=[[Atomic Layer Deposition (Oxford FlexAL)]]=		=[[Atomic Layer Deposition (Oxford FlexAL)]]=

			==What is ALD?==
⚫	==~~Oxford~~ ~~FlexAL~~ Process ~~Notes~~==
			Atomic layer deposition (ALD) utilizes sequential exposure cycles of 2 gaseous precursors to a substrate surface. Each half-cycle exposes one of the precursors to the substrate (and in the absence of the other) to ensure a "saturated" coverage on the surface. The saturation in exposure leads to the self-limiting reaction behavior which defines an ALD process from other deposition techniques. With this in place, the deposition can proceed layer-by-layer with cycling and will result in uniform conformal growth over different substrate topographies.

			In most standard process, one half-cycle utilizes an organometallic precursor to deposit the metal of interest. The other half-cycle utilizes a counter-reactant to either oxidize or nitridize this metal to form the oxide or nitride film required.

			By nature of the deposition process, the reactions are slow. Hence, users are restricted to 30 nm maximum thickness for all films when using the tool. Any deviations from this requirement needs special permission (contact [[Brian Lingg\|Tool Supervisor]] if needed).

		⚫	== ALD Process Options ==

	===Temperature===		===Temperature===

Biljana: /* Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3) */

2024-12-17T16:29:23Z

Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)

← Older revision		Revision as of 16:29, 17 December 2024
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	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.214 A/cyc		**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.214 A/cyc
	*Recipe name: '''''CH3-TMA+H2O-<u>200C</u>''''' ("Thermal")		*Recipe name: '''''CH3-TMA+H2O-<u>200C</u>''''' ("Thermal")
	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.~~283~~ A/cyc		**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.184 A/cyc
	**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''		**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''
	Recipe Name: '''''CH3-TMA+250W/O-300C''''' ("Plasma")		Recipe Name: '''''CH3-TMA+250W/O-300C''''' ("Plasma")

Biljana: /* Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3) */

2024-12-16T18:23:24Z

Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)

← Older revision		Revision as of 18:23, 16 December 2024
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	*Recipe name: '''''CH3-TMA+H2O-<u>250C</u>''''' ("Thermal")		*Recipe name: '''''CH3-TMA+H2O-<u>250C</u>''''' ("Thermal")
	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.214 A/cyc		**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.214 A/cyc
	*Recipe name: '''''CH3-TMA+H2O-20<u>0C</u>''''' ("Thermal")		*Recipe name: '''''CH3-TMA+H2O-<u>200C</u>''''' ("Thermal")
	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.283 A/cyc		**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.283 A/cyc
	**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''		**Temperature variations: 300°C (std.), '''250°C, 200°C, 150°C, 120°C'''

Biljana: /* Oxford FlexAL Chamber #3: Dielectrics */

2024-12-16T18:22:54Z

Oxford FlexAL Chamber #3: Dielectrics

← Older revision		Revision as of 18:22, 16 December 2024
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	**This is considered the standard recipe for ALD		**This is considered the standard recipe for ALD
	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.192 A/cyc		**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.192 A/cyc
	*Recipe name: '''''CH3-TMA+H2O-25<u>0C</u>''''' ("Thermal")		*Recipe name: '''''CH3-TMA+H2O-<u>250C</u>''''' ("Thermal")
	**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.214 A/cyc		**Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1.214 A/cyc
	*Recipe name: '''''CH3-TMA+H2O-20<u>0C</u>''''' ("Thermal")		*Recipe name: '''''CH3-TMA+H2O-20<u>0C</u>''''' ("Thermal")