Autostep 200 Mask Making Guidance - Revision history

John d: /* Stepper Mask Tutorials */

2025-07-18T14:18:34Z

Stepper Mask Tutorials

← Older revision		Revision as of 14:18, 18 July 2025
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	== Stepper Mask Tutorials ==		== Stepper Mask Tutorials ==
	[[File:Stepper Reticle Tutorial - Reticle Masking Schematic.png\|alt=Schematic of stepper blocking off adjacent Images on reticle and exposure onto different wafer locations.\|thumb\|'''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Click for Stepper Reticle Tutorial]''' Stepper Reticle Patterns (“images”) can optionally be much more sophisticated and flexible than contact plates.\|link=https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]]		If you are new to stepper masks, please see these tutorials before starting your design.[[File:Stepper Reticle Tutorial - Reticle Masking Schematic.png\|alt=Schematic of stepper blocking off adjacent Images on reticle and exposure onto different wafer locations.\|thumb\|'''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Click for Stepper Reticle Tutorial]''' Stepper Reticle Patterns (“images”) can optionally be much more sophisticated and flexible than contact plates.\|link=https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]]

	* '''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Stepper Reticle Layout vs Wafer Layout (Demis D. John)]''' ''-'' explains how Stepper mask layout is very different than other litho systems.		* '''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Stepper Reticle Layout vs Wafer Layout (Demis D. John)]''' ''-'' explains how Stepper mask layout is very different than other litho systems.

John d: added stepper tutorials

2025-07-18T14:18:05Z

added stepper tutorials

← Older revision		Revision as of 14:18, 18 July 2025
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	__TOC__		__TOC__

			== Stepper Mask Tutorials ==
			[[File:Stepper Reticle Tutorial - Reticle Masking Schematic.png\|alt=Schematic of stepper blocking off adjacent Images on reticle and exposure onto different wafer locations.\|thumb\|'''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Click for Stepper Reticle Tutorial]''' Stepper Reticle Patterns (“images”) can optionally be much more sophisticated and flexible than contact plates.\|link=https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]]

			* '''[https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Stepper Reticle Layout vs Wafer Layout (Demis D. John)]''' ''-'' explains how Stepper mask layout is very different than other litho systems.
			* '''[[Stepper Reticle Layout (Advanced) - Complex Experiments and Variations]]''' - If you need many design variations on your wafer.

	==Photomask Ordering Info==		==Photomask Ordering Info==

John d: /* CAD Files */ added photomask Cell + Layer

2025-01-30T23:40:49Z

CAD Files: added photomask Cell + Layer

← Older revision		Revision as of 23:40, 30 January 2025
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	*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]		*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]
	**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied - it is already at 5x magnification.''		**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling nor outer template applied - it is already at 5x magnification and has the GCA's reticle-alignment marks to align the mask to the lens column.''
	**''Insert your wafer-scale designs into the template as Instances scaled UP by 5x.''		**''Insert your wafer-scale designs into the template as Instances scaled UP by 5x (using the Instance Properties).''
	**''Template is written for "objects/polygons are CLEAR" - choose your design polarity accordingly.''		**''Template is written for "objects/polygons are CLEAR" aka. "Dark Field" - choose your design polarity accordingly.''
			**Use the Cell "'''Reticle_Align'''" or "'''Reticle_AlignFlat'''" (flattened version of the same), GDS '''Layer 42/0'''.
	**''Your device cell should have center of die at (0,0), and instance it into the template with coords (0,0).''		**''Your device cell should have center of die at (0,0), and instance it into the template with coords (0,0), for a single-design centered on the plate.''
	*[https://wiki.nanotech.ucsb.edu/w/images/9/92/GCA_Global_Mark.gds GCA Alignment Marks CAD File] can be downloaded here.		*[https://wiki.nanotech.ucsb.edu/w/images/9/92/GCA_Global_Mark.gds GCA Alignment Marks CAD File] can be downloaded here.
	**''You can optionally include these in your die, allowing the system to perform'' Local alignment ''in addition to std. Global alignment.''		**''You can optionally include these in your die, allowing the system to perform'' Local alignment ''in addition to std. Global alignment.''

John d: /* Photomask Ordering Info */ move ucsb ordering link to photomask ordering heading

2024-12-12T15:59:56Z

Photomask Ordering Info: move ucsb ordering link to photomask ordering heading

← Older revision		Revision as of 15:59, 12 December 2024
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	__TOC__		__TOC__

⚫	'''[[Photomask Ordering Procedure for UCSB Users]]''' - see this page for how to submit your order into the purchasing system.

	==Photomask Ordering Info==		==Photomask Ordering Info==
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	*Instruct vendor that design is for a "'''''GCA AutoStep200 with 5x reduction'''''".		*Instruct vendor that design is for a "'''''GCA AutoStep200 with 5x reduction'''''".
	*You can insert your design into the photomask template yourself (below) with no barcode, or ask the vendor to insert your 1x (wafer-scale) design into the appropriate GCA template and they can add a barcode.		*You can insert your design into the photomask template yourself (below) with no barcode, or ask the vendor to insert your 1x (wafer-scale) design into the appropriate GCA template and they can add a barcode.
		⚫	*'''[[Photomask Ordering Procedure for UCSB Users]]''' - see this page for how to submit your order into the purchasing system.
	*Request our negotiated quote (for ACADEMICS ONLY) from [[Demis D. John\|Demis]] or [[Brian Thibeault\|Brian]].		**Request our negotiated quote (for ACADEMICS ONLY) from [[Demis D. John\|Demis]] or [[Brian Thibeault\|Brian]].

	==Submission Details==		==Submission Details==

John d: /* Alignment Marks (Global, Local/DFAS) */ link to CAD files section, removed Vernier link (since its on CAD files section)

2024-01-04T21:44:10Z

Alignment Marks (Global, Local/DFAS): link to CAD files section, removed Vernier link (since its on CAD files section)

← Older revision		Revision as of 21:44, 4 January 2024
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	To learn more about how these alignment marks work with the system, see the reticle handbook here:		To learn more about how these alignment marks work with the system, see the reticle handbook here:

			*[https://wiki.nanofab.ucsb.edu/w/images/uploads/2023/GCA-ReticleHandbook.pdf '''GCA Reticle Handbook''']
	* GCA Reticle handbook - '''''TO BE ADDED'''''

	In our system we mainly use manual global alignment to get +/- 0.25 or better alignment tolerance. Local alignment can be used but needs some characterization for each process.		In our system we mainly use manual global alignment to get +/- 0.25 or better alignment tolerance. Local alignment can be used but needs some characterization for each process.

	*''Global alignment marks'': These marks and how to place them on the mask are described on page 5-44 to 5-47 of the ~~reticle~~ ~~handbook~~ and are included as an ~~attachment~~ ~~to this document.~~ The difference of our system from the manual is that the objectives are 63.5 mm apart, not 76.2 mm as indicated in the manual. The distance of this mark (or marks) to the center of the cell in X and Y should be noted, this is the ''key offset'' and will be required when exposing a job. (Positive offset values are left for X and up for Y).		*''Global alignment marks'': These marks and how to place them on the mask are described on page 5-44 to 5-47 of the above GCA Reticle Handbook and are included for download below. The difference of our system from the manual is that the objectives are 63.5 mm apart, not 76.2 mm as indicated in the manual. The distance of this mark (or marks) to the center of the cell in X and Y should be noted, this is the ''key offset'' and will be required when exposing a job. (Positive offset values are left ← for X and up ↑ for Y).
	*''Local alignment marks'': Uses Digital Fine-Alignment System (DFAS). These marks and how to place them on the mask are described on page 5-33 to 5-34 of the ~~reticle~~ ~~handbook~~ and are included as an attachment to this document. If possible use one of each type if you desire to try to use local alignment. These can be light or dark field in nature. The distance of the center point of this mark (or marks) to the center of the cell in X and Y should be noted, this is the key offset and will be required when exposing a job.		*''Local alignment marks'': Uses Digital Fine-Alignment System (DFAS). These marks and how to place them on the mask are described on page 5-33 to 5-34 of the above GCA Reticle Handbook and are included as an attachment to this document. If possible use one of each type if you desire to try to use local alignment. These can be light or dark field in nature. The distance of the center point of this mark (or marks) to the center of the cell in X and Y should be noted, this is the key offset and will be required when exposing a job.
	*[https://wiki.nanotech.ucsb.edu/w/images/9/92/GCA_Global_Mark.gds Alignment Marks CAD File] can be downloaded here.		*[https://wiki.nanotech.ucsb.edu/w/images/9/92/GCA_Global_Mark.gds Alignment Marks CAD File] can be downloaded here.

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	**''You can optionally include these in your die, allowing the system to perform'' Local alignment ''in addition to std. Global alignment.''		**''You can optionally include these in your die, allowing the system to perform'' Local alignment ''in addition to std. Global alignment.''
	**''The AutoStep200 also has a system mask with this mark, which you could optionally use to shoot marks on the wafer.''		**''The AutoStep200 also has a system mask with this mark, which you could optionally use to shoot marks on the wafer.''
			*See [[Calculators + Utilities#CAD%20Files%20.26%20Templates\|Calculators + Utilities > CAD Files]] for other useful CAD files, such as Overlay/Alignment and Resolution measurement.
	*Registration/Overlay/Alignment Measurement: [[Media:Vernier Template.gds\|100nm Vernier CAD file]]

John d: /* Alignment Marks (Global, Local/DFAS) */ placeholder for reticle handbook

2024-01-04T18:56:47Z

Alignment Marks (Global, Local/DFAS): placeholder for reticle handbook

← Older revision		Revision as of 18:56, 4 January 2024
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	==Alignment Marks (Global, Local/DFAS)==		==Alignment Marks (Global, Local/DFAS)==
	To learn more about how these alignment marks work with the system, see the reticle handbook ~~{{todo\|"Reticle handbook" is missing!}}~~		To learn more about how these alignment marks work with the system, see the reticle handbook here:

			* GCA Reticle handbook - '''''TO BE ADDED'''''

	In our system we mainly use manual global alignment to get +/- 0.25 or better alignment tolerance. Local alignment can be used but needs some characterization for each process.		In our system we mainly use manual global alignment to get +/- 0.25 or better alignment tolerance. Local alignment can be used but needs some characterization for each process.

John d at 21:09, 22 September 2023

2023-09-22T21:09:31Z

← Older revision		Revision as of 21:09, 22 September 2023
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			__TOC__
⚫	[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.

		⚫	'''[[Photomask Ordering Procedure for UCSB Users]]''' - see this page for how to submit your order into the purchasing system.

	==Photomask Ordering Info==		==Photomask Ordering Info==

John d: link to UCSB purchasing info

2023-09-22T21:06:49Z

link to UCSB purchasing info

← Older revision		Revision as of 21:06, 22 September 2023
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			[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.

	==Photomask Ordering Info==		==Photomask Ordering Info==

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	*Request our negotiated quote (for ACADEMICS ONLY) from [[Demis D. John\|Demis]] or [[Brian Thibeault\|Brian]].		*Request our negotiated quote (for ACADEMICS ONLY) from [[Demis D. John\|Demis]] or [[Brian Thibeault\|Brian]].

	== Submission Details ==		==Submission Details==
	When submitting the photo mask order, the following notes/definitions apply:		When submitting the photo mask order, the following notes/definitions apply:

	# "''Grade''" determines the price, and is chosen based on required feature size (smaller feature size is more expensive). This is found on the vendor's quote, or you ask the vendor for a price based on desired minimum feature size. Although you will submit your CAD file at 1x wafer scale, the actual reticle is printed 5x larger, so make sure to choose your reticle grade accounting for this; eg. If I want to shoot 1.0µm lines, I should choose a photomask grade better/equal to 5.0µm.		#"''Grade''" determines the price, and is chosen based on required feature size (smaller feature size is more expensive). This is found on the vendor's quote, or you ask the vendor for a price based on desired minimum feature size. Although you will submit your CAD file at 1x wafer scale, the actual reticle is printed 5x larger, so make sure to choose your reticle grade accounting for this; eg. If I want to shoot 1.0µm lines, I should choose a photomask grade better/equal to 5.0µm.
	# “''GDS Level''” is the “layer number”		#“''GDS Level''” is the “layer number”
	# "''topcell''" is the name of the Cell in your CAD file that contains the hierarchy of patterns to print.		#"''topcell''" is the name of the Cell in your CAD file that contains the hierarchy of patterns to print.
	# Typically printed "''Right reading (legible) with Chrome Down''", if your CAD is exactly what you want on the wafer.		#Typically printed "''Right reading (legible) with Chrome Down''", if your CAD is exactly what you want on the wafer.
	# “''Min. Feature on Mask''/Lines” refers to minimum clear or chrome feature, assuming features similar to lines/spaces. See "''Grade''" above.		#“''Min. Feature on Mask''/Lines” refers to minimum clear or chrome feature, assuming features similar to lines/spaces. See "''Grade''" above.
	# “''Min. Contact''” refers to features with aspect ratio close to 1:1, eg. Squares and circles. These have a separate spec due to the manufacturing process, so make sure to choose the appropriate grade of photomask with this in mind.		#“''Min. Contact''” refers to features with aspect ratio close to 1:1, eg. Squares and circles. These have a separate spec due to the manufacturing process, so make sure to choose the appropriate grade of photomask with this in mind.
	# Choose a Critical Dimension “''CD''” similar to your most critical feature (scaled up to the reticle scale), so they will print & measure & guarantee test structures at that size.		#Choose a Critical Dimension “''CD''” similar to your most critical feature (scaled up to the reticle scale), so they will print & measure & guarantee test structures at that size.
	# For UCSB purchases: you will need to submit your order in UCSB Procurement Gateway '''''first''''' (as a "''Non-Catalogue Item''"), with the cost estimate & grade/product code from our negotiated quote, so that you can get the Purchase Order (PO) Number. Then submit the order form to the photomask vendor with this PO number entered on their order form.		#For UCSB purchases: you will need to submit your order in UCSB Procurement Gateway '''''first''''' (as a "''Non-Catalogue Item''"), with the cost estimate & grade/product code from our negotiated quote, so that you can get the Purchase Order (PO) Number. Then submit the order form to the photomask vendor with this PO number entered on their order form.

	==Mask Layout==		==Mask Layout==
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	*''Resolution:'' If you have room in the mask layout, it is good to have features that can give the resolution of a given exposure. The resolution should show both “pillars” and “trenches” in the resist so that you can see whether the focus or exposure needs some tweaking for your particular process.		*''Resolution:'' If you have room in the mask layout, it is good to have features that can give the resolution of a given exposure. The resolution should show both “pillars” and “trenches” in the resist so that you can see whether the focus or exposure needs some tweaking for your particular process.

	== CAD Files ==		==CAD Files==

	*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]		*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]

John d: addded Submission Details section

2023-03-15T17:31:07Z

addded Submission Details section

@@ Line 8: / Line 8: @@
 *Instruct vendor that design is for a "'''''GCA AutoStep200 with 5x reduction'''''".
 *You can insert your design into the photomask template yourself (below) with no barcode, or ask the vendor to insert your 1x (wafer-scale) design into the appropriate GCA template and they can add a barcode.
 ==Mask Layout==
 *Maximum exposable single-image size: 14.8 x 14.8 mm at 1x wafer-scale (74mm square at 5x reticle-scale). Photomask vendor can accept up to max. 78mm X 78mm @ 5x reticle-scale.
-*For multiple Images (patterns) per photomask mask: ≥1mm (wafer-scale) / ≥5mm @ 5x mask-scale of chrome in between adjacent Images/patterns.
+*For multiple Images (patterns) per photomask mask: ≥1mm @ 1x wafer-scale / ≥5mm @ 5x mask-scale of chrome in between adjacent Images/patterns.
 *For multiple Images per photomask, you'll need to calculate the distance, in mm, for the shutter blade positions to block off the unwanted regions of the mask.
 **There are 4 shutter blades, '''XL(left)/XR(right)/YF(front)/YR(rear)''', that start at ''Position=0mm'' (not blocking any part of the mask), and can extend up to ''Position=97mm'', blocking the entire mask.  For the first 13mm (''Position = 0→13mm''), nothing is blocked on the 14.8mm exposure field.
@@ Line 40: / Line 42: @@
 *''Vernier Scales:'' These can be included to quantify the alignment offset after an exposure is done.  The reticle handbook has an example of vernier scales on pages 5-49 to 5-53.  You should include them for any layers that require critical alignment.
 *''Resolution:''  If you have room in the mask layout, it is good to have features that can give the resolution of a given exposure.  The resolution should show both “pillars” and “trenches” in the resist so that you can see whether the focus or exposure needs some tweaking for your particular process.

John d: /* CAD Files */

2022-12-10T07:23:57Z

CAD Files

← Older revision		Revision as of 07:23, 10 December 2022
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	*[https://wiki.nanotech.ucsb.edu/w/images/9/92/GCA_Global_Mark.gds GCA Alignment Marks CAD File] can be downloaded here.		*[https://wiki.nanotech.ucsb.edu/w/images/9/92/GCA_Global_Mark.gds GCA Alignment Marks CAD File] can be downloaded here.
	**''You can optionally include these in your die, allowing the system to perform'' Local alignment ''in addition to std. Global alignment.''		**''You can optionally include these in your die, allowing the system to perform'' Local alignment ''in addition to std. Global alignment.''
	*Registration/Overlay/Alignment Measurement: [[~~:File~~:Vernier Template.gds\|100nm Vernier CAD file]]		*Registration/Overlay/Alignment Measurement: [[Media:Vernier Template.gds\|100nm Vernier CAD file]]

	==Mask Layout==		==Mask Layout==
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	==Alignment Marks (Global, Local/DFAS)==		==Alignment Marks (Global, Local/DFAS)==
	To learn more about how these alignment marks work with the system, see the reticle handbook {{todo\|"Reticle handbook" is missing!}}~~. In our system we mainly use manual global alignment to get +/- 0.25 or better alignment tolerance. Local alignment can be used but needs some characterization for each process.~~		To learn more about how these alignment marks work with the system, see the reticle handbook {{todo\|"Reticle handbook" is missing!}}
			In our system we mainly use manual global alignment to get +/- 0.25 or better alignment tolerance. Local alignment can be used but needs some characterization for each process.

	*''Global alignment marks'': These marks and how to place them on the mask are described on page 5-44 to 5-47 of the reticle handbook and are included as an attachment to this document. The difference of our system from the manual is that the objectives are 63.5 mm apart, not 76.2 mm as indicated in the manual. The distance of this mark (or marks) to the center of the cell in X and Y should be noted, this is the ''key offset'' and will be required when exposing a job. (Positive offset values are left for X and up for Y).		*''Global alignment marks'': These marks and how to place them on the mask are described on page 5-44 to 5-47 of the reticle handbook and are included as an attachment to this document. The difference of our system from the manual is that the objectives are 63.5 mm apart, not 76.2 mm as indicated in the manual. The distance of this mark (or marks) to the center of the cell in X and Y should be noted, this is the ''key offset'' and will be required when exposing a job. (Positive offset values are left for X and up for Y).