Contact Aligner (SUSS MA-6) - Revision history

John d: /* Operating Procedures */

2025-12-06T04:20:09Z

Operating Procedures

← Older revision		Revision as of 04:20, 6 December 2025
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	==Operating Procedures==		==Operating Procedures==

	*[https://wiki.nanofab.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes ~~BSA~~]		*[https://wiki.nanofab.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes Back-Side Alignment]
	*[https://wiki.nanotech.ucsb.edu/w/images/7/75/MA-6_Exp_Mode_Visual_Aid.pdf MA6 Exposure Mode Information]		*[https://wiki.nanotech.ucsb.edu/w/images/7/75/MA-6_Exp_Mode_Visual_Aid.pdf MA6 Exposure Mode Information]
	*[[MA6 Backside Alignment - Allowed Mark Locations]]		*[[MA6 Backside Alignment - Allowed Mark Locations]]

John d: Docujmentation --> Operating Procedures & added ToolActions

2025-12-06T04:18:38Z

Docujmentation --> Operating Procedures & added ToolActions

← Older revision		Revision as of 04:18, 6 December 2025
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	\|toolid=33		\|toolid=33
	}}		}}
			{{ToolActions
			\|toolid = 33
			\|ProcessControlURL =
			\|ProceduresURL =
			\|TrainingURL =
			}}
	==About==		==About==
	This system is a dual-use mask aligner and wafer-bond aligner, used for contact and proximity exposure processes. System is motorized for contact/proximity, microscope objective movement and exposure, with a computer used to display the microscope image for regular and backside alignment overlay. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades.		This system is a dual-use mask aligner and wafer-bond aligner, used for contact and proximity exposure processes. System is motorized for contact/proximity, microscope objective movement and exposure, with a computer used to display the microscope image for regular and backside alignment overlay. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades.
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	*Other wafer sizes can be discussed with staff		*Other wafer sizes can be discussed with staff

			==Operating Procedures==
	==Documentation==

	*[https://wiki.nanofab.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes BSA]		*[https://wiki.nanofab.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes BSA]

John d: link to edge bead removal

2024-11-22T20:09:31Z

link to edge bead removal

← Older revision		Revision as of 20:09, 22 November 2024
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	*Recipes > Lithography > '''[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29\|Suss MA6]]'''		*Recipes > Lithography > '''[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29\|Suss MA6]]'''
	**''Also lists the exposure powers.''		**''Also lists the exposure powers.''
			*[[Photolithography - Manual Edge-Bead Removal Techniques]]

John d: links to CAD file info

2024-09-05T21:47:42Z

links to CAD file info

← Older revision		Revision as of 21:47, 5 September 2024
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	*[[MA6 Backside Alignment - Allowed Mark Locations]]		*[[MA6 Backside Alignment - Allowed Mark Locations]]
	*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]

⚫	*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.
			=== Mask Plate Info ===

			* [[Mask Making Guidelines for Contact Aligners\|Mask Making Guidelines - Contact Masks]] - ''in progress''

		⚫	*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the UCSB purchasing system.

	===CAD Files===		===CAD Files===
			''For designing your mask plates.''

	*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds\|MA6-FrontBack_AlignMarks_only.gds]]		*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds\|MA6-FrontBack_AlignMarks_only.gds]]
			*[[Calculators + Utilities#CAD%20Layout%20Programs\|CAD Layout Programs]]
			*[[Calculators + Utilities#CAD%20Design%20Tips\|CAD Design Tips]]
			*[[Calculators + Utilities#CAD%20Files%20.26%20Templates\|CAD Files & Templates]] - alignment markers, verniers and other useful CAD objects

	==Recipes==		==Recipes==

Sawyer l at 15:10, 30 July 2024

2024-07-30T15:10:00Z

← Older revision		Revision as of 15:10, 30 July 2024
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	\|type = Lithography		\|type = Lithography
	\|super= Lee Sawyer		\|super= Lee Sawyer
	\|super2= ~~Don~~ ~~Freeborn~~		\|super2= Bill Millerski
	\|phone=(805) 893-2123		\|phone=(805) 893-2123
	\|location=Bay 7		\|location=Bay 7

John d: /* Documentation */ link to UCSB mask ordering procedure

2023-09-22T21:08:48Z

Documentation: link to UCSB mask ordering procedure

← Older revision		Revision as of 21:08, 22 September 2023
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	*[[MA6 Backside Alignment - Allowed Mark Locations]]		*[[MA6 Backside Alignment - Allowed Mark Locations]]
	*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]
			*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.

	===CAD Files===		===CAD Files===

Sawyer l: Minor SOP edit (typo)

2023-08-02T16:34:50Z

Minor SOP edit (typo)

← Older revision		Revision as of 16:34, 2 August 2023
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	==Documentation==		==Documentation==

	*[https://wiki.~~nanotech~~.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes BSA]		*[https://wiki.nanofab.ucsb.edu/w/images/4/41/MA-6_SOP_Rev_D.pdf MA6 Standard Operating Procedure, includes BSA]
	*[https://wiki.nanotech.ucsb.edu/w/images/7/75/MA-6_Exp_Mode_Visual_Aid.pdf MA6 Exposure Mode Information]		*[https://wiki.nanotech.ucsb.edu/w/images/7/75/MA-6_Exp_Mode_Visual_Aid.pdf MA6 Exposure Mode Information]
	*[[MA6 Backside Alignment - Allowed Mark Locations]]		*[[MA6 Backside Alignment - Allowed Mark Locations]]

John d: /* About */ explained BSA a bit more.

2023-04-28T18:18:32Z

About: explained BSA a bit more.

← Older revision		Revision as of 18:18, 28 April 2023
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	Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the [[Suss Aligners (SUSS MJB-3)\|MJB-3 aligners]].		Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the [[Suss Aligners (SUSS MJB-3)\|MJB-3 aligners]].

	The system is fitted with visible, bottom-side optics for back-side alignment capability. Backside alignment is performed with an automated image capture system, at 5x, 10x, or 20x magnification.		The system is fitted with visible, motorize, bottom-side optics for back-side alignment capability. Backside alignment is performed with an automated image capture system, at 5x, 10x, or 20x magnification. The backside alignment system takes images of the photomask from the ''underside'', then overlays that image digitally with the wafer face-down, again aligning with the cameras on the underside.

	Bonding alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the [[Wafer Bonder (SUSS SB6-8E)\|Karl-Suss SB6 system]] - contact the supervisor beforehand so the bond alignment fixturing can be installed.		Bonding alignment can be performed on 3” to 6” wafers. The bond alignment is performed with special fixturing to allow aligned samples to be transferred to the [[Wafer Bonder (SUSS SB6-8E)\|Karl-Suss SB6 system]] - contact the supervisor beforehand so the bond alignment fixturing can be installed.

John d: mentioned motorized systems

2023-04-28T18:16:55Z

mentioned motorized systems

← Older revision		Revision as of 18:16, 28 April 2023
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	}}		}}
	==About==		==About==
	This system is a dual-use mask aligner and wafer-bond aligner~~. Mask alignment is~~ used for contact and proximity exposure processes. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades.		This system is a dual-use mask aligner and wafer-bond aligner, used for contact and proximity exposure processes. System is motorized for contact/proximity, microscope objective movement and exposure, with a computer used to display the microscope image for regular and backside alignment overlay. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-and i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades.

	Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the [[Suss Aligners (SUSS MJB-3)\|MJB-3 aligners]].		Lithography can be performed on wafers from 2” to 6” in diameter. Piece parts are better handled on the [[Suss Aligners (SUSS MJB-3)\|MJB-3 aligners]].
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	*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]

	=== CAD Files ===		===CAD Files===

	* Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds\|MA6-FrontBack_AlignMarks_only.gds]]		*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds\|MA6-FrontBack_AlignMarks_only.gds]]

	==Recipes==		==Recipes==

John d: /* Documentation */ added link to alignment mark GDS file

2023-01-04T00:38:00Z

Documentation: added link to alignment mark GDS file

← Older revision		Revision as of 00:38, 4 January 2023
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	*[[MA6 Backside Alignment - Allowed Mark Locations]]		*[[MA6 Backside Alignment - Allowed Mark Locations]]
	*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/4/40/BA6_SOP_Rev_A.pdf BA6 Standard Operating Procedure]

			=== CAD Files ===

			* Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds\|MA6-FrontBack_AlignMarks_only.gds]]

	==Recipes==		==Recipes==