Direct-Write Lithography Recipes - Revision history

John d: fixed header and link

2026-09-30T20:05:47Z

fixed header and link

← Older revision		Revision as of 20:05, 30 September 2026
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	==[[Maskless Aligner (Raith ~~PicoMasterXF~~)~~]]-~~ ~~WIP~~ (~~needs~~ ~~to be linked to equipment page~~) ==		==[[Maskless Aligner (Raith PicoMaster XF)\|Maskless Aligner (Raith PicoMasterXF)]] ==

	=== Positive Resist (Raith PicoMasterXF) ===		=== Positive Resist (Raith PicoMasterXF) ===

2026-09-30T18:23:48Z

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

← Older revision		Revision as of 18:23, 30 September 2026
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	=== Positive Resist (Raith PicoMasterXF) ===		=== Positive Resist (Raith PicoMasterXF) ===

	=== <small>Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.</small> ===		=== <small>Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below. Used exposure recipe " 200um_GLV".</small> ===
	{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"		{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
	\|- bgcolor="#D0E7FF"		\|- bgcolor="#D0E7FF"

2026-09-30T18:22:57Z

Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

← Older revision		Revision as of 18:22, 30 September 2026
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	\|~ 0.9 µm		\|~ 0.9 µm
	\|405		\|405
	\|~~120~~		\|100
	\| 0		\| -1.5
	\|		\|
	\|110°C, 60s		\|110°C, 60s
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	\|Used UCSB design		\|Used UCSB design
	(dense line/gap, 0.6um/0.6um)		(dense line/gap, 0.6um/0.6um)

			Vertical lines~602nm, Horizontal lines~454nm
	\|-		\|-
	\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 955-1.8]]		\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 955-1.8]]

2026-09-25T22:32:18Z

Positive Resist (Raith PicoMasterXF)

← Older revision		Revision as of 22:32, 25 September 2026
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	\|[[Media:SPR955-Positive-Resist-Datasheet.pdf\|SPR 955-CM0.9]]		\|[[Media:SPR955-Positive-Resist-Datasheet.pdf\|SPR 955-CM0.9]]
	\|3 krpm, 30s		\|3 krpm, 30s
	\|95°C, ~~90s~~		\|95°C, 60s
	\|~ 0.9 µm		\|~ 0.9 µm
	\|405		\|405
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	\| 0		\| 0
	\|		\|
	\|110°C, ~~90s~~		\|110°C, 60s
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s
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	\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 955-1.8]]		\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 955-1.8]]
	\|4 krpm, 30s		\|4 krpm, 30s
	\|95°C, ~~90s~~		\|95°C, 60s
	\|~ 1.8 µm		\|~ 1.8 µm
	\|405		\|405
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	\|0		\|0
	\|		\|
	\|110°C, ~~90s~~		\|110°C, 60s
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s

2026-09-25T22:31:44Z

changed SPR955 to PEB and soft bake to 60s

← Older revision		Revision as of 22:31, 25 September 2026
Line 81:		Line 81:
	\|[[Media:SPR955-Positive-Resist-Datasheet.pdf\|SPR 955-CM0.9]]		\|[[Media:SPR955-Positive-Resist-Datasheet.pdf\|SPR 955-CM0.9]]
	\|3 krpm, 30s		\|3 krpm, 30s
	\|95°C, ~~90s~~		\|95°C, 60s
	\|~ 0.9 µm		\|~ 0.9 µm
	\|405		\|405
Line 87:		Line 87:
	\| - 7		\| - 7
	\|		\|
	\|110°C, ~~90s~~		\|110°C, 60s
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s
Line 94:		Line 94:
	\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 955-1.8]]		\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 955-1.8]]
	\|4 krpm, 30s		\|4 krpm, 30s
	\|95°C, ~~90s~~		\|95°C, 60s
	\|~ 1.8 µm		\|~ 1.8 µm
	\|405		\|405
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	\|10		\|10
	\|		\|
	\|110°C, ~~90s~~		\|110°C, 60s
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s

2026-08-04T15:56:20Z

Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

← Older revision		Revision as of 15:56, 4 August 2026
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	==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==		==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

	===Positive Resist (Raith PicoMasterXF) ~~Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.~~===		=== Positive Resist (Raith PicoMasterXF) ===

			=== <small>Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.</small> ===
	{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"		{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
	\|- bgcolor="#D0E7FF"		\|- bgcolor="#D0E7FF"

2026-08-04T15:54:30Z

Negative Resist (Raith PicoMasterXF)

← Older revision		Revision as of 15:54, 4 August 2026
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	\|}		\|}
	<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal		<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal

	<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.		<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.

2026-08-04T15:53:22Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 15:53, 4 August 2026
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	\|}		\|}

	===Negative Resist (Raith PicoMasterXF)~~- WIP~~===		===Negative Resist (Raith PicoMasterXF)===

2026-08-04T15:53:09Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 15:53, 4 August 2026
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	! width="300" \|Comments		! width="300" \|Comments
	\|-		\|-
	\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]** ~~- WIP~~		\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]**
	\|6 krpm, 30s		\|6 krpm, 30s
	\|95°C, 60s		\|95°C, 60s
	\|~ 1.0 µm		\|~ 1.0 µm
	\|405		\|405
	\|~~WIP~~		\|30
	\|~~WIP~~		\|0
	\|110°C, 60s		\|110°C, 60s
	\|60"		\|60"
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s
			\|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
	\|WIP
	\|-		\|-
	\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]		\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]
Line 472:		Line 472:
	\|AZ300MIF		\|AZ300MIF
	\|30s		\|30s
	\|Used UCSB design (dense lines are patterned negative resist)		\|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
	line/gap=1um/1um)
	\|-		\|-
	\|}		\|}
			<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
			<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.

2026-07-30T23:05:33Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 23:05, 30 July 2026
Line 453:		Line 453:
	\|~ 1.0 µm		\|~ 1.0 µm
	\|405		\|405
	\|		\|WIP
	\|		\|WIP
	\|110°C, 60s		\|110°C, 60s
	\|60"		\|60"
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s
	\|		\|WIP
	\|-		\|-
	\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]		\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]