Direct-Write Lithography Recipes - Revision history

Biljana: /* Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below. */

2026-08-04T15:56:20Z

Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.

← Older revision		Revision as of 15:56, 4 August 2026
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	==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==		==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

	===Positive Resist (Raith PicoMasterXF) ~~Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.~~===		=== Positive Resist (Raith PicoMasterXF) ===

			=== <small>Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.</small> ===
	{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"		{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
	\|- bgcolor="#D0E7FF"		\|- bgcolor="#D0E7FF"

2026-08-04T15:54:30Z

Negative Resist (Raith PicoMasterXF)

← Older revision		Revision as of 15:54, 4 August 2026
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	\|}		\|}
	<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal		<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal

	<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.		<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.

2026-08-04T15:53:22Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 15:53, 4 August 2026
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	\|}		\|}

	===Negative Resist (Raith PicoMasterXF)~~- WIP~~===		===Negative Resist (Raith PicoMasterXF)===

2026-08-04T15:53:09Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 15:53, 4 August 2026
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	! width="300" \|Comments		! width="300" \|Comments
	\|-		\|-
	\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]** ~~- WIP~~		\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]**
	\|6 krpm, 30s		\|6 krpm, 30s
	\|95°C, 60s		\|95°C, 60s
	\|~ 1.0 µm		\|~ 1.0 µm
	\|405		\|405
	\|~~WIP~~		\|30
	\|~~WIP~~		\|0
	\|110°C, 60s		\|110°C, 60s
	\|60"		\|60"
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s
			\|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
	\|WIP
	\|-		\|-
	\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]		\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]
Line 472:		Line 472:
	\|AZ300MIF		\|AZ300MIF
	\|30s		\|30s
	\|Used UCSB design (dense lines are patterned negative resist)		\|Used UCSB design (dense lines are patterned negative resist) (line/gap=1um/1um)
	line/gap=1um/1um)
	\|-		\|-
	\|}		\|}
			<nowiki>*</nowiki>PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
			<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.

2026-07-30T23:05:33Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 23:05, 30 July 2026
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	\|~ 1.0 µm		\|~ 1.0 µm
	\|405		\|405
	\|		\|WIP
	\|		\|WIP
	\|110°C, 60s		\|110°C, 60s
	\|60"		\|60"
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s
	\|		\|WIP
	\|-		\|-
	\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]		\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]

2026-07-30T23:05:08Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 23:05, 30 July 2026
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	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s
		⚫	\|
	\|Used UCSB design. Good for up to ~1.3um open line space.
	\|-		\|-
	\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]		\|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf\|AZnLOF2020]]
Line 466:		Line 466:
	\|~ 2.1µm		\|~ 2.1µm
	\|405		\|405
			\|450 (or higher)
⚫	\|
	\|		\| +2
	\|110°C, 60s		\|110°C, 60s
	\|''none''		\|''none''
	\|AZ300MIF		\|AZ300MIF
	\|~~90s~~		\|30s
	\|Used UCSB design. ~~Good~~ ~~for~~ ~~2um~~ ~~open~~ ~~line~~ ~~space.~~		\|Used UCSB design (dense lines are patterned negative resist)
			line/gap=1um/1um)
	\|-		\|-
	\|}		\|}

2026-07-30T22:34:27Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 22:34, 30 July 2026
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	==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP ==		==[[Maskless Aligner (Raith PicoMasterXF)]]- WIP (needs to be linked to equipment page) ==

	===Positive Resist (Raith PicoMasterXF)===		===Positive Resist (Raith PicoMasterXF) Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.===


	Note: Calibrations done with the "UCSB design" on 4 inch Si wafers, using resists listed below.
	{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"		{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
	\|- bgcolor="#D0E7FF"		\|- bgcolor="#D0E7FF"

2026-07-30T22:33:16Z

Negative Resist (Raith PicoMasterXF)- WIP

← Older revision		Revision as of 22:33, 30 July 2026
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	! width="300" \|Comments		! width="300" \|Comments
	\|-		\|-
	\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]**		\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]** - WIP
	\|6 krpm, 30s		\|6 krpm, 30s
	\|95°C, 60s		\|95°C, 60s
	\|~ 1.0 µm		\|~ 1.0 µm
	\|~~375~~		\|405
	\|35		\|
			\|
	\| - 5
	\|110°C, 60s		\|110°C, 60s
	\|60"		\|60"
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	\|110°C, 60s		\|110°C, 60s
	\|~ 2.1µm		\|~ 2.1µm
	\|~~375~~		\|405
	\|~~340~~		\|
			\|
	\| - 3
	\|110°C, 60s		\|110°C, 60s
	\|''none''		\|''none''

2026-07-30T22:32:25Z

Positive Resist (Raith PicoMasterXF)

← Older revision		Revision as of 22:32, 30 July 2026
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	\|60s		\|60s
	\|Used UCSB design		\|Used UCSB design
	(dense line/gap, 0.~~65um~~/0.~~65um~~)		(dense line/gap, 0.6um/0.6um)
	\|-		\|-
	\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 220-3.0]]		\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 220-3.0]]
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	\|~ 7.0µm		\|~ 7.0µm
	\|405		\|405
	\|		\|340
	\|		\| -3
	\|>1hr		\|>1hr
	\|115°C, 90s		\|115°C, 90s
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	\|70s		\|70s
	\|Used UCSB design		\|Used UCSB design
	(dense line/gap, ~~0.65um~~/~~0.65um~~)		(dense line/gap, >>1um/1um)
	\|}		\|}

2026-07-30T18:50:33Z

Positive Resist (Raith PicoMasterXF)

← Older revision		Revision as of 18:50, 30 July 2026
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	Cool 1min		Cool 1min
	\|~ 7.0µm		\|~ 7.0µm
	\|~~375~~		\|405
			\|
	\|~550mJ
			\|
	\| -20
	\|>1hr		\|>1hr
	\|115°C, 90s		\|115°C, 90s
	\|AZ300MiF		\|AZ300MiF
	\|70s		\|70s
			\|Used UCSB design
	\|Rehydration after exposure is necessary, to prevent bubbles at PEB.
			(dense line/gap, 0.65um/0.65um)
	\|}		\|}