Direct-Write Lithography Recipes - Revision history

John d: pasted and formatted EBL resists section

2025-08-08T18:52:37Z

pasted and formatted EBL resists section

← Older revision		Revision as of 18:52, 8 August 2025
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	<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.		<nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles.
	\|}		\|}

			== [[E-Beam Lithography System (Raith EBPG 5150+)\|E-Beam Lithography Recipes (Raith EBPG 5150+)]] ==

			=== Electron Beam Resists Available ===
			EBL Resists are custom-mixed according to user resolution needs - contact [[Bill Mitchell]] to get a bottle.

			Currently available at UCSB are:
			*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole)
			**High-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight);
			**Poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication);
			**Utilizes an inert solvent developer (usually MIBK:IPA mixtures)

			*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate)
			**A positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above
			**Used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

			*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!
			**High-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance
			**Can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate
			**Utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

			*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified)
			**Very good resolution (down to the 40-50nm range) and sensitivity
			**Exhibits excellent dry-etch resistance
			**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

			*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based)
			**Extremely good resolution (features below 10nm can be resolved)
			**Etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development
			**Sensitivity and contrast are very dependent on developer solution used and are usually poor
			***Standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast
			***Stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV)
			***"Salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)

			*'''DUV resists: UV6, UV210 UVN-30''': chemically amplified polymer-based resists
			**High resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV)
			**UV6 used mostly in optimized t-gate resist structures
			**Developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)
			**Can be "double exposed" by [[Stepper 3 (ASML DUV)\|ASML DUV Stepper]] and EBL.
			***Recommended to produce ASML alignment marks first for double exposure methods.
			**See ASML litho recipes for datasheets.

			=== EBL Exposure Recipes ===
			'''''To Be Added''''' - BEAMER simulation is always required for small (<<micron) features.

Biljana: /* Positive Resist (MLA150) */ Update for SPR 955-1.8

2024-11-12T19:10:08Z

Positive Resist (MLA150): Update for SPR 955-1.8

@@ Line 78: / Line 78: @@
+|
+|
 |-
 |[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]]

John d: /* Negative Resist (MLA150) */ udpated 5214 instructions

2024-08-21T17:14:14Z

Negative Resist (MLA150): udpated 5214 instructions

← Older revision		Revision as of 17:14, 21 August 2024
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	! width="100" \|DeFocus		! width="100" \|DeFocus
	! width="75" \|PEB*		! width="75" \|PEB*
	! width="75" \|Flood*		! width="75" \|Flood**
	! width="100" \|Developer		! width="100" \|Developer
	! width="125" \|Developer Time		! width="125" \|Developer Time
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	\|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.		\|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
	\|-		\|-
	\| colspan="12" \|*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal~~, and requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''afterwards''''', before developing.~~		\| colspan="12" \|*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
	<nowiki>**</nowiki> ~~Please~~ ~~see~~ here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.		<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.
	\|}		\|}

John d: /* Negative Resist (MLA150) */ link to az5214 basic process

2024-08-21T16:46:03Z

Negative Resist (MLA150): link to az5214 basic process

← Older revision		Revision as of 16:46, 21 August 2024
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	! width="300" \|Comments		! width="300" \|Comments
	\|-		\|-
	\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]		\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]**
	\|6 krpm, 30s		\|6 krpm, 30s
	\|95°C, 60s		\|95°C, 60s
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	\|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.		\|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
	\|-		\|-
	\| colspan="12" \|*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner afterwards, before developing.		\| colspan="12" \|*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''afterwards''''', before developing.
			<nowiki>**</nowiki> Please see here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.
	\|}		\|}

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	\|TBD		\|TBD
	\|<small>Author Credit:</small>		\|<small>Author Credit:</small>
	* <small>Patrick Curtis, 2022</small>		*<small>Patrick Curtis, 2022</small>
	* <small>Biljana Stamenic 2023</small>		*<small>Biljana Stamenic 2023</small>
	* <small>Demis D. John 2023</small>		*<small>Demis D. John 2023</small>
	\|-		\|-
	\|		\|

John d: /* Greyscale Lithography (MLA150) */ moved SPR comments to own row, was squished into small column

2024-07-17T14:13:54Z

Greyscale Lithography (MLA150): moved SPR comments to own row, was squished into small column

← Older revision		Revision as of 14:13, 17 July 2024
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	For CAD design tips and requirements, see these pages:		For CAD design tips and requirements, see these pages:

	* [[MLA150 - Design Guidelines\|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''		*[[MLA150 - Design Guidelines\|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
	* [[MLA150 - CAD Files and Templates\|CAD Files and Templates]] - example CAD files etc.		*[[MLA150 - CAD Files and Templates\|CAD Files and Templates]] - example CAD files etc.

	Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)\|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.		Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)\|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
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	\|60s		\|60s
	\|		\|
	\| align="left" \|		\| align="left" \|''To Be Added''
	*''TBD''
	\|-		\|-
	\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 220-7.0]]		\|[[Media:SPR220-Positive-Resist-Datasheet.pdf\|SPR 220-7.0]]
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	\|70s		\|70s
	\|TBD		\|TBD
			\|<small>Author Credit:</small>
⚫	\|Rehydration after exposure is necessary, to prevent bubbles at PEB.
			* <small>Patrick Curtis, 2022</small>
⚫	Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow.
			* <small>Biljana Stamenic 2023</small>
			* <small>Demis D. John 2023</small>
			\|-
			\|
		⚫	\| colspan="12" \|Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
		⚫	Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile.

	Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023		<small>Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab\|publications policy]].</small>
	\|-		\|-
	\| colspan="13" \|*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.		\| colspan="13" \|*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.

John d: added links to CAD design tips

2024-05-16T00:17:14Z

added links to CAD design tips

← Older revision		Revision as of 00:17, 16 May 2024
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	==[[Maskless Aligner (Heidelberg MLA150)]]==		==[[Maskless Aligner (Heidelberg MLA150)]]==
			For CAD design tips and requirements, see these pages:

			* [[MLA150 - Design Guidelines\|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.''
			* [[MLA150 - CAD Files and Templates\|CAD Files and Templates]] - example CAD files etc.

	Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)\|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.		Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)\|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.

John d: /* Maskless Aligner (Heidelberg MLA150) */ link to Troubleshooting/OOFocus section

2024-03-20T22:04:08Z

Maskless Aligner (Heidelberg MLA150): link to Troubleshooting/OOFocus section

← Older revision		Revision as of 22:04, 20 March 2024
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	'''<u>Note:</u>''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis\|FEM Analysis Tips page]] for how to choose the proper exposure parameters.		'''<u>Note:</u>''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis\|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

			The [[MLA150 - Troubleshooting#Out Of Focus Exposures\|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it!

	===Positive Resist (MLA150)===		===Positive Resist (MLA150)===

John d: /* Maskless Aligner (Heidelberg MLA150) */ added FEM comment

2024-03-15T00:27:00Z

Maskless Aligner (Heidelberg MLA150): added FEM comment

← Older revision		Revision as of 00:27, 15 March 2024
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	'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.		'''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.

			'''<u>Note:</u>''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis\|FEM Analysis Tips page]] for how to choose the proper exposure parameters.

	===Positive Resist (MLA150)===		===Positive Resist (MLA150)===
	''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies, compensate using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing\|as described here]].''		''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing\|as described here]].''

	Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.		Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.

John d: /* Greyscale Lithography (MLA150) */ deleted Flood Expose column

2024-03-15T00:17:54Z

Greyscale Lithography (MLA150): deleted Flood Expose column

← Older revision		Revision as of 00:17, 15 March 2024
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	!Rehydrate*		!Rehydrate*
	! width="75" \|PEB**		! width="75" \|PEB**
	! width="75" \|Flood
	! width="100" \|Developer		! width="100" \|Developer
	! width="125" \|Developer Time		! width="125" \|Developer Time
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	\|		\|
	\|		\|
	\|60"
	\|AZ300MIF		\|AZ300MIF
	\|60s		\|60s
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	\|≥1hr		\|≥1hr
	\|115°C, 90s		\|115°C, 90s
	\| -
	\|AZ300MiF		\|AZ300MiF
	\|70s		\|70s
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	Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023		Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023
	\|-		\|-
	\| colspan="14" \|*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.		\| colspan="13" \|*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
	<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop		<nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop

John d: /* Greyscale Lithography (MLA150) */ added link to GS page

2024-02-27T19:29:38Z

Greyscale Lithography (MLA150): added link to GS page

← Older revision		Revision as of 19:29, 27 February 2024
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	===Greyscale Lithography (MLA150)===		===Greyscale Lithography (MLA150)===
	''AZ4620 is the manufacturer-recommended PR for greyscale litho.''		''AZ4620 is the manufacturer-recommended PR for greyscale litho.''

			Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds\|'''MLA150 - Greyscale Design Guidelines & Limitation''']]
	{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"		{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
	\|- bgcolor="#D0E7FF"		\|- bgcolor="#D0E7FF"

← Older revision		Revision as of 17:14, 21 August 2024
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	! width="100" \|DeFocus		! width="100" \|DeFocus
	! width="75" \|PEB*		! width="75" \|PEB*
	! width="75" \|Flood*		! width="75" \|Flood**
	! width="100" \|Developer		! width="100" \|Developer
	! width="125" \|Developer Time		! width="125" \|Developer Time
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	\|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.		\|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end.
	\|-		\|-
	\| colspan="12" \|*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal~~, and requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''afterwards''''', before developing.~~		\| colspan="12" \|*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
	<nowiki>**</nowiki> ~~Please~~ ~~see~~ here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.		<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.
	\|}		\|}