E-Beam 4 (CHA) - Revision history

John d: max dep thickness put into bullet list

2026-04-22T21:32:06Z

max dep thickness put into bullet list

← Older revision		Revision as of 21:32, 22 April 2026
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	The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.		The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

	This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. ~~The maximum deposition thickness during a run is limited to 1.0 microns.~~		This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations.

	== Detailed Specifications ==		== Detailed Specifications ==
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	**4x 6-inch wafers for normal incidence		**4x 6-inch wafers for normal incidence
	*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.		*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.
			*Maximum deposition thickness during a run is limited to 1.0 microns.

	== Documentation ==		== Documentation ==

Barreraz at 17:18, 14 April 2026

2026-04-14T17:18:07Z

← Older revision		Revision as of 17:18, 14 April 2026
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	**24x 4” wafers for sidewall coverage (planetary)		**24x 4” wafers for sidewall coverage (planetary)
	**4x 6-inch wafers for normal incidence		**4x 6-inch wafers for normal incidence
	*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, ~~Fe, NiCr, NiFe,~~ Cr		*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

	== Documentation ==		== Documentation ==

Barreraz at 17:17, 14 April 2026

2026-04-14T17:17:43Z

← Older revision		Revision as of 17:17, 14 April 2026
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	The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.		The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

	The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, ~~Fe, NiCr, NiFe~~ and Cr.		The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, and Cr.

	This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.		This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

Barreraz: /* Documentation */

2025-12-15T13:32:39Z

Documentation

← Older revision		Revision as of 13:32, 15 December 2025
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	== Documentation ==		== Documentation ==
	*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]		*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]
			*[https://wiki.nanofab.ucsb.edu/w/images/9/9b/EBeam4_Planetary_Fixture_SOP_12-11-25.pdf Planetary Fixture SOP] (Requires SUM Reservation)

	== Recipes ==		== Recipes ==

John d: /* About */

2025-09-15T16:57:16Z

About

← Older revision		Revision as of 16:57, 15 September 2025
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	== About ==		== About ==
	This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer~~. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls~~. The system ~~also~~ an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.		This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

			The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

			The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr.

			This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

	== Detailed Specifications ==		== Detailed Specifications ==

John d: /* Detailed Specifications */ updated # of samples

2025-08-12T18:52:55Z

Detailed Specifications: updated # of samples

← Older revision		Revision as of 18:52, 12 August 2025
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	== Detailed Specifications ==		== Detailed Specifications ==
	*Temescal 10kV power supply		*Temescal 10kV power supply
	*1-Temescal 8-pocket series 260 e-beam sources		*1-Temescal 8-pocket series, 260 e-beam sources
	*Cryo-pumped system with ~ 5e-7 ultimate base pressure		*Cryo-pumped system with ~ 5e-7 ultimate base pressure
	*Rotation with baffle for 5% uniformity over 4” wafer		*Rotation with baffle for 5% uniformity over 4” wafer
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	*Inficon IC/5 programmable crystal thickness monitoring system		*Inficon IC/5 programmable crystal thickness monitoring system
	*Automatic deposition of multiple layer stacks		*Automatic deposition of multiple layer stacks
			*Sample size:
	*Sample size: Pieces or up to 10-4” wafers for lift-off and 24-4” wafers for sidewall coverage
			**Pieces or
			**9x 4” wafers for lift-off (normal incidence)
			**24x 4” wafers for sidewall coverage (planetary)
			**4x 6-inch wafers for normal incidence
	*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr		*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

John d: added process control data, changed to heading level 1, renamed to "recipes" section

2025-02-28T18:42:09Z

added process control data, changed to heading level 1, renamed to "recipes" section

← Older revision		Revision as of 18:42, 28 February 2025
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	[[File:EBeam4 Controls.jpeg\|thumb\|EBeam4's controls]]		[[File:EBeam4 Controls.jpeg\|thumb\|EBeam4's controls]]

	=About=		== About ==
	This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.		This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

	=Detailed Specifications=		== Detailed Specifications ==

	*Temescal 10kV power supply		*Temescal 10kV power supply
	*1-Temescal 8-pocket series 260 e-beam sources		*1-Temescal 8-pocket series 260 e-beam sources
Line 31:		Line 30:
	*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr		*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

	=Documentation=		== Documentation ==

	*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]		*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]

			== Recipes ==
⚫	=Materials Table=

⚫	For ~~the~~ materials ~~tables~~, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)\|E-Beam Recipe Page]].
		⚫	=== Materials Table ===
		⚫	For tables listing all available materials and deposition parameters, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)\|'''E-Beam Recipe Page''']].

			=== Process Control Data ===
			*E-Beam 4 Ti: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=0#gid=0 Titanium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=384597990#gid=384597990 Titanium Plots]
			*E-Beam 4 Au: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=834604706#gid=834604706 Gold Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=721807140#gid=721807140 Gold Plots]
			*E-Beam 4 Cr: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1629968393#gid=1629968393 Chromium Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=701729811#gid=701729811 Chromium Plots]
			*E-Beam 4 Ni: [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=649905488#gid=649905488 Nickel Datasheet] & [https://docs.google.com/spreadsheets/d/1W7OFMAlRIcbpjm7FsbCh9ZLCCbhEp0bhtAC7UqEmJ5U/edit?gid=1525197973#gid=1525197973 Nickel Plots]

Barreraz: /* Documentation */

2024-06-06T22:20:08Z

Documentation

← Older revision		Revision as of 22:20, 6 June 2024
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	=Documentation=		=Documentation=

	*[https://wiki.~~nanotech~~.ucsb.edu/w/images/3/37/~~EBeam4_Operating_Instructions_4~~-7-~~2023~~.pdf Operating Procedures]		*[https://wiki.nanofab.ucsb.edu/w/images/4/46/EB4_Operating_Instructions_6-6-24.pdf Operating Procedures]

	=Materials Table=		=Materials Table=

Barreraz: /* Documentation */

2023-04-11T19:04:54Z

Documentation

← Older revision		Revision as of 19:04, 11 April 2023
Line 33:		Line 33:
	=Documentation=		=Documentation=

	*[https://wiki.nanotech.ucsb.edu/w/images/8/8b/~~Wiki_Operational_Procedure_EB4_With_EBC_Rev_3~~.pdf Operating Procedures]		*[https://wiki.nanotech.ucsb.edu/w/images/3/37/EBeam4_Operating_Instructions_4-7-2023.pdf Operating Procedures]

	=Materials Table=		=Materials Table=

Barreraz: updated pics and added pic of controls

2022-09-08T19:17:17Z

updated pics and added pic of controls

← Older revision		Revision as of 19:17, 8 September 2022
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	\|materials =		\|materials =
	\|toolid=10		\|toolid=10
	}}		}}
			[[File:EBeam4 Controls.jpeg\|thumb\|EBeam4's controls]]
⚫	= About =

		⚫	=About=
	This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.		This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

	= Detailed Specifications =		=Detailed Specifications=

	*Temescal 10kV power supply		*Temescal 10kV power supply
	*1-Temescal 8-pocket series 260 e-beam sources		*1-Temescal 8-pocket series 260 e-beam sources
Line 29:		Line 32:

	=Documentation=		=Documentation=

	*[https://wiki.nanotech.ucsb.edu/w/images/8/8b/Wiki_Operational_Procedure_EB4_With_EBC_Rev_3.pdf Operating Procedures]		*[https://wiki.nanotech.ucsb.edu/w/images/8/8b/Wiki_Operational_Procedure_EB4_With_EBC_Rev_3.pdf Operating Procedures]

	= Materials Table =		=Materials Table=
	For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)\|E-Beam Recipe Page]].		For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #4)\|E-Beam Recipe Page]].