E-Beam Lithography System (JEOL JBX-6300FS) - Revision history

John d at 04:06, 19 June 2025

2025-06-19T04:06:57Z

← Older revision		Revision as of 04:06, 19 June 2025
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	'''<big>TOOL DECOMISSIONED on April 2025. This tool has been removed from the lab, the below info is for reference purposes only.</big>'''		'''<big>TOOL DECOMISSIONED in April 2025. This tool has been removed from the lab, the below info is for reference purposes only.</big>'''
	__TOC__		__TOC__
	= About =		= About =

John d: tool decomissioned notice

2025-06-19T04:06:30Z

tool decomissioned notice

← Older revision		Revision as of 04:06, 19 June 2025
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	\|toolid=34		\|toolid=34
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			'''<big>TOOL DECOMISSIONED on April 2025. This tool has been removed from the lab, the below info is for reference purposes only.</big>'''

	test

	__TOC__		__TOC__
	= About =		= About =

John d at 04:04, 19 June 2025

2025-06-19T04:04:59Z

← Older revision		Revision as of 04:04, 19 June 2025
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			test

			__TOC__
	= About =		= About =
	The 6300FS machine was installed at UCSB in May 2007.		The 6300FS machine was installed at UCSB in May 2007.

John d: added "JBX-" to model #

2022-08-15T06:28:12Z

added "JBX-" to model #

← Older revision		Revision as of 06:28, 15 August 2022
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	\|description = Vector Scan Electron Beam Lithography System		\|description = Vector Scan Electron Beam Lithography System
	\|manufacturer = JEOL USA Inc		\|manufacturer = JEOL USA Inc
	\|model = 6300FS		\|model = JBX-6300FS
	\|materials =		\|materials =
	\|toolid=34		\|toolid=34

John d: added wafer load size

2020-11-05T17:52:21Z

added wafer load size

← Older revision		Revision as of 17:52, 5 November 2020
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	*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)		*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)
	*150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed		*150x150 mm writable area and wafer load size; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed

	*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.		*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.

John d: deleted erroneous fiels in {tool} template

2020-09-14T04:08:34Z

deleted erroneous fiels in {tool} template

← Older revision		Revision as of 04:08, 14 September 2020
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	\|type = Lithography		\|type = Lithography
	\|super= Bill Mitchell		\|super= Bill Mitchell
	\|phone= (805)893-4974
	\|location=Bay 7		\|location=Bay 7
	\|email=mitchell@ece.ucsb.edu
	\|description = Vector Scan Electron Beam Lithography System		\|description = Vector Scan Electron Beam Lithography System
	\|manufacturer = JEOL USA Inc		\|manufacturer = JEOL USA Inc
			\|model = 6300FS
	\|materials =		\|materials =
	\|toolid=34		\|toolid=34

Mitchell b: /* Detailed Specifications */

2017-10-31T17:43:00Z

Detailed Specifications

← Older revision		Revision as of 17:43, 31 October 2017
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	*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.		*Dynamic Focus and Stigmation Control for improved writing performance across the entire scan field.
	*UNIX computer controlled		*UNIX computer controlled


	*Advanced Fracturing software available (Layout BEAMER from GeniSys, Inc)		*Advanced Fracturing software available (Layout BEAMER from GeniSys, Inc)

Mitchell b: /* Detailed Specifications */

2017-10-31T17:41:34Z

Detailed Specifications

← Older revision		Revision as of 17:41, 31 October 2017
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	*Utilizes a “Hi-brightness” thermal field emission electron source (ZnO/W) with a minimum spot-size at the substrate of 2nm; operates at 100kV only		*Utilizes a “Hi-brightness” thermal field emission electron source (ZnO/W) with a minimum spot-size at the substrate of 2nm; operates at 100kV only
	*Unique two lens/deflector scanning system:		*Unique two lens/deflector scanning system:
	**<u>4th lens</u> => 7-~~8 nm~~ minimum ~~linewidth~~, 0.~~125nm~~ scan step resolution, ~~62.5x62.5um~~ scan field		**<u>4th lens</u> => 20-25nm minimum line-width, 1.000nm scan step resolution, 500 x 500um scan field
	**<u>5th lens</u> => 20-~~25nm~~ minimum ~~linewidth~~, 1.~~000nm~~ scan step resolution, ~~500 x 500um~~ scan field		**<u>5th lens</u> => 7-8 nm minimum line-width, 0.125nm scan step resolution, 62.5x62.5um scan field

	*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)		*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)

Mitchell b: /* Detailed Specifications */

2017-10-31T17:37:52Z

Detailed Specifications

← Older revision		Revision as of 17:37, 31 October 2017
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	**<u>4th lens</u> => 7-8 nm minimum linewidth, 0.125nm scan step resolution, 62.5x62.5um scan field		**<u>4th lens</u> => 7-8 nm minimum linewidth, 0.125nm scan step resolution, 62.5x62.5um scan field
	**<u>5th lens</u> => 20-25nm minimum linewidth, 1.000nm scan step resolution, 500 x 500um scan field		**<u>5th lens</u> => 20-25nm minimum linewidth, 1.000nm scan step resolution, 500 x 500um scan field

	*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)		*Maximum deflector scan speed = 25MHz (=> 40ns/pixel minimum dwell time)
	*150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed		*150x150 mm writable area; stage position control to 0.6nm accuracy (λ/1024); 10mm/s maximum stage speed

Mitchell b: /* Electron Beam Resists */

2017-10-31T17:36:50Z

Electron Beam Resists

← Older revision		Revision as of 17:36, 31 October 2017
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	Currently available at UCSB are:		Currently available at UCSB are:
	*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (~~1:3~~ MIBK:IPA)		*'''PMMA''': (950K in anisole, 950K in MIBK, 495K in anisole, 50K in anisole): very high-resolution positive polymer-based resist with relatively poor sensitivity (resolution scales directly and sensitivity scales inversely with molecular weight); very poor plasma etch resistance, hence used primarily to fabricate metal lines via liftoff processes (via a bi-layer resist scheme...low MW on bottom, high MW on top for single lines, or vice-versa for T-gate fabrication); utilizes an inert solvent developer (usually MIBK:IPA mixtures)

	*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes an inert solvent developer (~~1:3~~ MIBK:IPA)		*'''P(MMA-MAA) copolymer''': (low MW methyl-methacrylate (MMA) and methacrylic acid (MAA) copolymers in ethyl lactate): a positive polymer-based resist with poor resolution but with significantly higher sensitivity than the higher MW PMMA resists above; used primarily as the top layer in a bi-layer resist scheme for T-Gate fabrication, and utilizes inert solvent developer (MIBK:IPA mixtures)

	*'''~~ZEP520~~''': very high-resolution positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes an inert solvent ~~developer~~ (~~100%~~ n-amyl acetate)		*'''CSAR-62''': ZEP-equivalent resist manufactured in Germany at much more competitive pricing!; very high-resolution polymer-based positive resist with very good sensitivity and excellent etch resistance; can be used in both metal lift-off processes (slight overexposure results in an excellent undercut profile) and various dry-etch processes for pattern transfer to the underlying substrate; utilizes inert solvent developers (e.g., n-amyl acetate for higher sensitivity and good resolution or MIBK:IPA mixtures for increased LER performance)

	*'''maN-2403''': negative resist (that is NOT chemically amplified) with very good resolution (~~sub~~-~~100~~ nm) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as ~~Shipley CD-26 or LDD~~-~~26W~~)		*'''maN-2403''': negative polymer-based resist (that is NOT chemically amplified) with very good resolution (down to the 40-50nm range) and sensitivity; exhibits excellent dry-etch resistance; developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)

			*'''HSQ''': negative resist that is based on spin-on glass material (ie, not polymer-based) with extremely good resolution (features below 10nm can be resolved); etch resistance is high in Cl-based chemistries since HSQ reduces to a porous SiOx structure after exposure and development; sensitivity and contrast are very dependent on developer solution used and are usually poor - standard AZ300MIF developer solutions have decent sensitivity (100's of uC/cm2 at 100kV) but extremely poor contrast, stronger (and toxic!) 25%TMAH solutions have much better contrast but poor sensitivity (1000's of uC/cm2 at 100kV), "salty" developer solutions using 1wt% NaCl dissolved in either 4wt% NaOH or AZ300MIF solutions have the best contrast but reduce sensitivity significantly (10,000's of uC/cm2 at 100kV)
	*'''UV5/UVIII''': chemically amplified positive resists with very high resolution and excellent sensitivity; exhibits poor stability in cleanroom environments and has a short (< 6 months) shelf-life; currently under development at UCSB

			*'''UV6/UVN-210''': chemically amplified polymer-based resists with high resolution and excellent sensitivity (clearing doses below 100uC/cm2 at 100kV); UV6 used mostly in optimized t-gate resist structures; developed using a dilute basic solution (e.g., metal-ion-free developers such as AZ-300MIF)