Field Emission SEM 2 (JEOL IT800SHL) - Revision history

John d at 04:08, 1 March 2024

2024-03-01T04:08:43Z

← Older revision		Revision as of 04:08, 1 March 2024
Line 15:		Line 15:
	Identical to [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1], but with EDAX module added.		Identical to [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1], but with EDAX module added.

	Please see the [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1 page] for main tool details.		'''Please see the [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1 page] for main tool details & procedures.'''

	==EDS Elemental Analysis==		==EDS Elemental Analysis==

Hopkins a: /* EDS Elemental Analysis */

2023-11-09T22:50:07Z

EDS Elemental Analysis

← Older revision		Revision as of 22:50, 9 November 2023
Line 17:		Line 17:
	Please see the [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1 page] for main tool details.		Please see the [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1 page] for main tool details.

	== EDS Elemental Analysis ==		==EDS Elemental Analysis==

	*EDS Operating Procedure
			*[https://wiki.nanofab.ucsb.edu/w/images/3/3a/EDS_SOP.jpg EDS Operating Procedure]

Hopkins a: /* EDAX Elemental Analysis */

2023-09-27T18:03:44Z

EDAX Elemental Analysis

← Older revision		Revision as of 18:03, 27 September 2023
Line 17:		Line 17:
	Please see the [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1 page] for main tool details.		Please see the [https://wiki.nanofab.ucsb.edu/wiki/SEM_1_(JEOL_IT800SHL) SEM#1 page] for main tool details.

	== ~~EDAX~~ Elemental Analysis ==		== EDS Elemental Analysis ==
			*EDS Operating Procedure
	'''Information to be added'''

John d: copied page from SEM1, linked to SEM1 page.

2023-09-12T22:32:48Z

copied page from SEM1, linked to SEM1 page.

@@ Line 1: / Line 1: @@
 {{tool2|{{PAGENAME}}
-|picture=JeolFesem.jpg
+|picture=SEM1_JEOL_IT800HSL.jpg
 |type = Inspection, Test and Characterization
 |super= Aidan Hopkins
 |super2= Bill Mitchell
 |location=Bay 1
 |description = JEOL 7600F FESEM
 |manufacturer = [http://www.jeolusa.com/PRODUCTS/ElectronOptics/ScanningElectronMicroscopesSEM/FESEM/JSM7600F/tabid/544/Default.aspx JEOL USA Inc]
@@ Line 12: / Line 10: @@
 |toolid=5
 }}
-=About=
+==About==

John d: John d moved page Field Emission SEM 2 (JEOL 7600F) to Field Emission SEM 2 (JEOL IT800SHL): new tool., old tool replaced

2023-09-12T22:20:49Z

John d moved page Field Emission SEM 2 (JEOL 7600F) to Field Emission SEM 2 (JEOL IT800SHL): new tool., old tool replaced

← Older revision	Revision as of 22:20, 12 September 2023
(No difference)

John d: /* Operating Procedures */ uplaoded SOP v08.12 from Mitchell

2023-07-18T23:50:27Z

Operating Procedures: uplaoded SOP v08.12 from Mitchell

← Older revision		Revision as of 23:50, 18 July 2023
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	==Operating Procedures==		==Operating Procedures==

	{{Todo\|upload procedures - printouts available at the tool}}
			* [[Media:JEOL 7600F UserManual.pdf\|JEOL 7600F UserManual.pdf]] (v08.12)

Silva at 18:53, 30 August 2022

2022-08-30T18:53:10Z

← Older revision		Revision as of 18:53, 30 August 2022
Line 1:		Line 1:
	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=JeolFesem.jpg		\|picture=JeolFesem.jpg
	\|type = Inspection, Test and Characterization		\|type = Inspection, Test and Characterization
	\|super= Aidan Hopkins		\|super= Aidan Hopkins
			\|super2= Bill Mitchell
	\|phone= (805)893-4974		\|phone= (805)893-4974
	\|location=Bay 1		\|location=Bay 1

John d: /* Mechanical */ added limited 4-inch wf movemnt

2022-06-22T13:16:20Z

Mechanical: added limited 4-inch wf movemnt

← Older revision		Revision as of 13:16, 22 June 2022
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	The [[SEM Sample Coater (Hummer)\|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).		The [[SEM Sample Coater (Hummer)\|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).

	== Detailed Specifications ==		==Detailed Specifications==

	=== Imaging ===		===Imaging===

	* Resolution:		*Resolution:
	** 1nm guaranteed at 15kV SEM mode		**1nm guaranteed at 15kV SEM mode
	** 2.5nm at 1kV in SEM mode		**2.5nm at 1kV in SEM mode
	** 1.5nm at 1kV in GB mode		**1.5nm at 1kV in GB mode
	* Magnification:		*Magnification:
	** SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)		**SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)
	** Low-Mag LM mode: x25 to x19,000		**Low-Mag LM mode: x25 to x19,000
	* Imaging Modes/Detectors:		*Imaging Modes/Detectors:
	** SEI: secondary electron imaging		**SEI: secondary electron imaging
	** LM: Low-magnification mode		**LM: Low-magnification mode
	** GB: Gentle-Beam mode		**GB: Gentle-Beam mode
	*** Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).		***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
	** LABE: Low-Angle Backscatter Electron detector		**LABE: Low-Angle Backscatter Electron detector
	*** Inserts between the objective lens and the sample		***Inserts between the objective lens and the sample
	*** Strong contrast between materials		***Strong contrast between materials
	** LEI: Lower Electron Detector		**LEI: Lower Electron Detector
	*** Detector is lower on chamber, creating strong topographical contrast.		***Detector is lower on chamber, creating strong topographical contrast.
	* Accelerating Voltages:		*Accelerating Voltages:
	** SEM: 0.5 to 30kV		**SEM: 0.5 to 30kV
	** GB: 0.1 to 4.0kV		**GB: 0.1 to 4.0kV
	* Beam Currents: 10<sup>-13</sup> to 2x10<sup>-7</sup> A		*Beam Currents: 10<sup>-13</sup> to 2x10<sup>-7</sup> A

	=== Mechanical ===		===Mechanical===

	* Max Sample Size: 4-inch wafer		*Max Sample Size: 4-inch wafer
	* Stage movement: ~~70 x 50mm~~		*Stage movement:
	* ~~Tilt~~: ~~-5°~~ to ~~+70°~~		**max: 70 x 50mm
			**4-inch wafer: limited to ~25x25mm movement area from wafer center.
⚫	* Rotation: 360°
			*Tilt: -5° to +70°
⚫	* Specimen holders :
		⚫	*Rotation: 360°
⚫	** Copper and XYZ Carbon tape available
		⚫	*Specimen holders :
⚫	** 4-inch wafer with topside clips
		⚫	**Copper and XYZ Carbon tape available
⚫	** 1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.
		⚫	**4-inch wafer with topside clips
		⚫	**1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.

	== Operating Procedures ==		==Operating Procedures==
	{{Todo\|upload procedures - printouts available at the tool}}		{{Todo\|upload procedures - printouts available at the tool}}

John d: added specs from user maual, SOP section (empty) and link to Hummer ocater

2022-06-22T13:15:11Z

added specs from user maual, SOP section (empty) and link to Hummer ocater

@@ Line 11: / Line 11: @@
 |toolid=5
 }}
-= About  =
+=About=
 The JEOL JSM-7600F FESEM is used for imaging a variety of samples made in the facility. For general specifications, see the link to the system above. Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. This is especially useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.
 The system can accept a 4” wafer, but only 50mm (approx. 25x25mm) of the wafer is accessible with the stage movement. A retractable LABE detector is also installed for high resolution back-scattered electron imaging.

John d: added 25x25mm

2018-05-18T16:16:57Z

added 25x25mm

← Older revision		Revision as of 16:16, 18 May 2018
Line 12:		Line 12:
	}}		}}
	= About =		= About =
	The JEOL JSM-7600F FESEM is used for imaging a variety of samples made in the facility. For general specifications, see the link to the system above. Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. This is especially useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. ~~The system can accept a 4” wafer, but only 50mm of the wafer is accessible with the stage movement. A retractable LABE detector is also installed for high resolution back-scattered electron imaging.~~		The JEOL JSM-7600F FESEM is used for imaging a variety of samples made in the facility. For general specifications, see the link to the system above. Our system is equipped with a gentle-beam mode of operation where bias is put on the stage, allowing for high resolution imaging at low electron energies impinging the surface. This is especially useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.

			The system can accept a 4” wafer, but only 50mm (approx. 25x25mm) of the wafer is accessible with the stage movement. A retractable LABE detector is also installed for high resolution back-scattered electron imaging.