https://wiki.nanofab.ucsb.edu/w/index.php?action=history&feed=atom&title=HF_Vapor_Etch
HF Vapor Etch - Revision history
2026-05-09T21:13:00Z
Revision history for this page on the wiki
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https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3301&oldid=prev
Ningcao: /* About */
2014-01-31T22:51:23Z
<p><span class="autocomment">About</span></p>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>= About =</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch rate from low to high. The SiO<sub>2</sub> under etch rate is from ~10nm/min to ~350nm/min.</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins style="font-weight: bold; text-decoration: none;">The </ins>applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch rate from low to high. The SiO<sub>2</sub> under etch rate is from ~10nm/min to ~350nm/min.</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3300&oldid=prev
Ningcao: /* About */
2014-01-31T22:49:38Z
<p><span class="autocomment">About</span></p>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>}} </div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>= About =</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del style="font-weight: bold; text-decoration: none;">The </del>applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch rate from low to high. The SiO<sub>2</sub> under etch rate is from ~10nm/min to ~350nm/min.</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch rate from low to high. The SiO<sub>2</sub> under etch rate is from ~10nm/min to ~350nm/min.</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>=Documentation=</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual]]</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3299&oldid=prev
Ningcao: /* Documentation */
2014-01-31T22:37:50Z
<p><span class="autocomment">Documentation</span></p>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-b.pdf|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-a.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-a.pdf|Si Etching Profile & Results]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|Si Etching Profile & Results]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>*[[media:<ins style="font-weight: bold; text-decoration: none;">26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-b.pdf</ins>|Si Etching Profile & Results]]</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3298&oldid=prev
Ningcao: /* Documentation */
2014-01-31T22:37:20Z
<p><span class="autocomment">Documentation</span></p>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-b.pdf|System Manual]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|Si Etching Profile & Results]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>*[[media:<ins style="font-weight: bold; text-decoration: none;">25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-a.pdf</ins>|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|Si Etching Profile & Results]]</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3297&oldid=prev
Ningcao: /* Documentation */
2014-01-31T22:36:29Z
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-b.pdf|System Manual]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>*[[media:<del style="font-weight: bold; text-decoration: none;">25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf</del>|Si Etching Profile & Results]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|Si Etching Profile & Results]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|Si Etching Profile & Results]]</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3286&oldid=prev
Ningcao: /* Documentation */
2014-01-30T23:44:39Z
<p><span class="autocomment">Documentation</span></p>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>=Documentation=</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|System Manual]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>*[[media:<ins style="font-weight: bold; text-decoration: none;">SPTS-Primaxx_uEtch_Presentation-b.pdf</ins>|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3284&oldid=prev
Ningcao: /* Documentation */
2014-01-30T23:43:51Z
<p><span class="autocomment">Documentation</span></p>
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<td colspan="2" style="background-color: #fff; color: #202122; text-align: center;">Revision as of 23:43, 30 January 2014</td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>=Documentation=</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:SPTS-Primaxx_uEtch_Presentation-a.pdf|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3283&oldid=prev
Ningcao: /* Documentation */
2014-01-30T23:43:17Z
<p><span class="autocomment">Documentation</span></p>
<table style="background-color: #fff; color: #202122;" data-mw="interface">
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<td colspan="2" style="background-color: #fff; color: #202122; text-align: center;">Revision as of 23:43, 30 January 2014</td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch rate from low to high. The SiO<sub>2</sub> under etch rate is from ~10nm/min to ~350nm/min.</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at 45<sup>o</sup>C. The tool uses vapor HF (VHF), EtOH (Ethanol vapor is an Alcohol-based one, ionizing the HF and activating etching, influencing within wafer etch uniformity, and being most compatible with VHF), and N<sub>2</sub> gases and can process small sample(s) (on a 8<sup>"</sup> Si carrier wafer) up to an 8<sup>"</sup> wafer. There are 5 standard etch recipes installed in the tool with the SiO<sub>2</sub> etch rate from low to high. The SiO<sub>2</sub> under etch rate is from ~10nm/min to ~350nm/min.</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>*[[media:<ins style="font-weight: bold; text-decoration: none;">SPTS-Primaxx_uEtch_Presentation-a.pdf</ins>|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3280&oldid=prev
Ningcao: /* Documentation */
2014-01-30T19:48:55Z
<p><span class="autocomment">Documentation</span></p>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>=Documentation=</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|System Manual]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>*[[media<del style="font-weight: bold; text-decoration: none;">:File</del>:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>*[[media:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf|Si Etching Profile & Results]]</div></td>
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Ningcao
https://wiki.nanofab.ucsb.edu/w/index.php?title=HF_Vapor_Etch&diff=3279&oldid=prev
Ningcao: /* Documentation */
2014-01-30T19:47:56Z
<p><span class="autocomment">Documentation</span></p>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|System Manual]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:File:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;"><div>*[[media:File:25-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-1.pdf|Si Etching Profile & Results]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>*[[media:|Si Etching Profile & Results]]</div></td>
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<td style="color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>*[[media:<ins style="font-weight: bold; text-decoration: none;">26-Dry_Etch_of_Unaxis_ICP-grown_SiO2_using_Vapor_HF_tool-2.pdf</ins>|Si Etching Profile & Results]]</div></td>
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Ningcao