Holographic Lith/PL Setup (Custom) - Revision history

John d: /* Operating Procedures */

2025-12-06T09:37:03Z

Operating Procedures

← Older revision		Revision as of 09:37, 6 December 2025
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	==Operating Procedures==		==Operating Procedures==
	* [https://docs.google.com/document/d/1PFmkN9Br5jH1cdzAzTS0ZqL4g3SGOnbV/edit?usp=sharing&ouid=117965716847601392764&rtpof=true&sd=true Holography Std. Operating Procedures] - '''Gopi Meena'''		* [https://docs.google.com/document/d/1PFmkN9Br5jH1cdzAzTS0ZqL4g3SGOnbV/edit?usp=sharing&ouid=117965716847601392764&rtpof=true&sd=true Holography Std. Operating Procedures] - ''(by Gopi Meena)''

	==Recipes==		==Recipes==

John d: added Operating Procedures, linked to Gopi's SOP in gDrive, added ToolActions widget

2025-12-06T09:25:17Z

added Operating Procedures, linked to Gopi's SOP in gDrive, added ToolActions widget

← Older revision		Revision as of 09:25, 6 December 2025
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	\|toolid=35		\|toolid=35
	}}		}}
			{{ToolActions\|
			\|toolid = 35
			\|InstructionsURL =
			\|ProcessControlURL =
			\|TrainingURL =
			}}
	==About==		==About==
	===Holography Lithography===		===Holography Lithography===
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	*Manual optics alignment.		*Manual optics alignment.
	*1-D and 2-D gratings possible, see recipes below.		*1-D and 2-D gratings possible, see recipes below.

			==Operating Procedures==
			* [https://docs.google.com/document/d/1PFmkN9Br5jH1cdzAzTS0ZqL4g3SGOnbV/edit?usp=sharing&ouid=117965716847601392764&rtpof=true&sd=true Holography Std. Operating Procedures] - '''Gopi Meena'''

	==Recipes==		==Recipes==

John d at 23:54, 5 February 2025

2025-02-05T23:54:10Z

← Older revision		Revision as of 23:54, 5 February 2025
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	A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:		A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:

	*[[Photoluminescence PL Setup (Custom)]]		*[[Photoluminescence PL Setup (Custom)\|'''Photoluminescence PL Setup (Custom)''']]

	==Detailed Specifications==		==Detailed Specifications==

John d at 23:53, 5 February 2025

2025-02-05T23:53:49Z

← Older revision		Revision as of 23:53, 5 February 2025
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	\|super2 = Brian Thibeault		\|super2 = Brian Thibeault
	\|location=Bay 6		\|location=Bay 6
	\|description = Custom Interference Lithography ~~& Photoluminescence~~		\|description = Custom Interference Lithography
	\|manufacturer = Custom-Built Free-Space Optics		\|manufacturer = Custom-Built Free-Space Optics
	\|toolid=35		\|toolid=35

John d: add brian thibeault as 2nd supervisor

2025-02-05T23:51:44Z

add brian thibeault as 2nd supervisor

← Older revision		Revision as of 23:51, 5 February 2025
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	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=Holograph.jpg		\|picture=Holograph.jpg
	\|type = Lithography		\|type = Lithography
	\|super= Demis D. John		\|super= Demis D. John
			\|super2 = Brian Thibeault
	\|location=Bay 6		\|location=Bay 6
	\|description = Custom Interference Lithography		\|description = Custom Interference Lithography & Photoluminescence
	\|manufacturer = Custom-Built Free-Space Optics		\|manufacturer = Custom-Built Free-Space Optics
	\|toolid=35		\|toolid=35
	}}		}}
	==About==		==About==
			===Holography Lithography===
	The interference lithography system (aka. Holography) at UCSB uses a 15mW, single-mode, 325 nm HeCd laser that is filtered and expanded by pinhole filters to produce the large area exposure beam. The system uses a simple mirror configuration with a fixed 90 degree angle between the mirror and sample. The entire mirror/sample assembly is rotated in 0.1 degree increments to change the grating pitch from ~ 200 nm to ~ 280 nm (35 to 55 degrees) over an ~ 2 cm x 2 cm exposure area.		The interference lithography system (aka. Holography) at UCSB uses a 15mW, single-mode, 325 nm HeCd laser that is filtered and expanded by pinhole filters to produce the large area exposure beam. The system uses a simple mirror configuration with a fixed 90 degree angle between the mirror and sample. The entire mirror/sample assembly is rotated in 0.1 degree increments to change the grating pitch from ~ 200 nm to ~ 280 nm (35 to 55 degrees) over an ~ 2 cm x 2 cm exposure area.

	[https://wiki.nanofab.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC] bottom anti-reflection coating (BARC) & [[Lithography Recipes#Chemicals Stocked .2B Datasheets\|THMR-3600HP]] imaging resist spin-coated to ~80 nm thickness is used for grating exposure. 2-D gratings can be formed by rotating the sample and doing multiple exposures. Total exposure times are controlled by a manual shutter and are generally several minutes in length.		[https://wiki.nanofab.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC] bottom anti-reflection coating (BARC) & [[Lithography Recipes#Chemicals Stocked .2B Datasheets\|THMR-3600HP]] imaging resist spin-coated to ~80 nm thickness is used for grating exposure. 2-D gratings can be formed by rotating the sample and doing multiple exposures. Total exposure times are controlled by a manual shutter and are generally several minutes in length.

			===Photoluminescence Measurement===
	A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:		A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:

John d: cusotme system, updated supervisor

2023-09-27T03:48:42Z

cusotme system, updated supervisor

← Older revision		Revision as of 03:48, 27 September 2023
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	\|picture=Holograph.jpg		\|picture=Holograph.jpg
	\|type = Lithography		\|type = Lithography
	\|super= ~~Ning~~ ~~Cao~~		\|super= Demis D. John
	\|phone=(805) 839-5689
	\|location=Bay 6		\|location=Bay 6
			\|description = Custom Interference Lithography
	\|email=Ningcao@ece.ucsb.edu
	\|~~description~~ = Custom Built ~~Interference~~ ~~Lithography~~		\|manufacturer = Custom-Built Free-Space Optics
	\|manufacturer = Kimmon
	\|toolid=35		\|toolid=35
	}}		}}
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	==Detailed Specifications==		==Detailed Specifications==

	*15 mW single TEM mode HeCd laser		*15 mW single TEM mode HeCd laser (Kimmon)
	*Max sample size: ~1.5 inch square uniform exposure area		*Max sample size: ~1.5 inch square uniform exposure area
	*~ 2 cm x 2 cm uniform exposure area		*~2 cm x 2 cm uniform exposure area
	*~~~ several~~ minute exposure times (manual shutter)		*Several-minute exposure times (manual shutter)
	*Grating period adjustable from ~200 to ~280 nm with rotation stage		*Grating period adjustable from ~200 to ~280 nm with rotation stage
	*Manual optics alignment.		*Manual optics alignment.

John d: /* Detailed Specifications */ minor updates to specs

2023-09-27T03:43:56Z

Detailed Specifications: minor updates to specs

← Older revision		Revision as of 03:43, 27 September 2023
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	*15 mW single TEM mode HeCd laser		*15 mW single TEM mode HeCd laser
	*Max sample size: ~1.5 inch square		*Max sample size: ~1.5 inch square uniform exposure area
	*~ 2 cm x 2 cm uniform exposure area		*~ 2 cm x 2 cm uniform exposure area
	*~ several minute exposure times		*~ several minute exposure times (manual shutter)
	*Grating period adjustable from ~200 to ~280 nm with rotation stage		*Grating period adjustable from ~200 to ~280 nm with rotation stage
			*Manual optics alignment.
			*1-D and 2-D gratings possible, see recipes below.

	== Recipes ==		==Recipes==

	* [[Lithography Recipes#Holography%20Recipes\|Lithography Recipes > Holography Recipes]] - developed recipes for 1D (line/space) and 2D (pillars) gratings.		*[[Lithography Recipes#Holography%20Recipes\|Lithography Recipes > Holography Recipes]] - developed recipes for 1D (line/space) and 2D (pillars) gratings.

John d: header level set correctly, link to recipes page

2023-09-20T23:46:26Z

header level set correctly, link to recipes page

← Older revision		Revision as of 23:46, 20 September 2023
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	\|toolid=35		\|toolid=35
	}}		}}
	=About=		==About==
	The interference lithography system (aka. Holography) at UCSB uses a 15mW, single-mode, 325 nm HeCd laser that is filtered and expanded by pinhole filters to produce the large area exposure beam. The system uses a simple mirror configuration with a fixed 90 degree angle between the mirror and sample. The entire mirror/sample assembly is rotated in 0.1 degree increments to change the grating pitch from ~ 200 nm to ~ 280 nm (35 to 55 degrees) over an ~ 2 cm x 2 cm exposure area.		The interference lithography system (aka. Holography) at UCSB uses a 15mW, single-mode, 325 nm HeCd laser that is filtered and expanded by pinhole filters to produce the large area exposure beam. The system uses a simple mirror configuration with a fixed 90 degree angle between the mirror and sample. The entire mirror/sample assembly is rotated in 0.1 degree increments to change the grating pitch from ~ 200 nm to ~ 280 nm (35 to 55 degrees) over an ~ 2 cm x 2 cm exposure area.

	[[Lithography Recipes#Chemicals Stocked .2B Datasheets\|THMR-3600HP]] resist spin-coated to ~ 80 nm thickness is used for grating exposure. 2-D gratings can be formed by rotating the sample and doing multiple exposures. Total exposure times are controlled by a manual shutter and are generally several minutes in length.		[https://wiki.nanofab.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC] bottom anti-reflection coating (BARC) & [[Lithography Recipes#Chemicals Stocked .2B Datasheets\|THMR-3600HP]] imaging resist spin-coated to ~80 nm thickness is used for grating exposure. 2-D gratings can be formed by rotating the sample and doing multiple exposures. Total exposure times are controlled by a manual shutter and are generally several minutes in length.

	A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:		A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:
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	*[[Photoluminescence PL Setup (Custom)]]		*[[Photoluminescence PL Setup (Custom)]]

	=Detailed Specifications=		==Detailed Specifications==

	*15 mW single TEM mode HeCd laser		*15 mW single TEM mode HeCd laser
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	*~ 2 cm x 2 cm uniform exposure area		*~ 2 cm x 2 cm uniform exposure area
	*~ several minute exposure times		*~ several minute exposure times
	*Grating period adjustable from ~200 to ~280 nm with ~~a single~~ stage		*Grating period adjustable from ~200 to ~280 nm with rotation stage

			== Recipes ==

			* [[Lithography Recipes#Holography%20Recipes\|Lithography Recipes > Holography Recipes]] - developed recipes for 1D (line/space) and 2D (pillars) gratings.

John d: /* Detailed Specifications */ added max sample size

2022-12-22T15:36:27Z

Detailed Specifications: added max sample size

← Older revision		Revision as of 15:36, 22 December 2022
Line 10:		Line 10:
	\|toolid=35		\|toolid=35
	}}		}}
	= About =		=About=
	The interference lithography system (aka. Holography) at UCSB uses a 15mW, single-mode, 325 nm HeCd laser that is filtered and expanded by pinhole filters to produce the large area exposure beam. The system uses a simple mirror configuration with a fixed 90 degree angle between the mirror and sample. The entire mirror/sample assembly is rotated in 0.1 degree increments to change the grating pitch from ~ 200 nm to ~ 280 nm (35 to 55 degrees) over an ~ 2 cm x 2 cm exposure area.		The interference lithography system (aka. Holography) at UCSB uses a 15mW, single-mode, 325 nm HeCd laser that is filtered and expanded by pinhole filters to produce the large area exposure beam. The system uses a simple mirror configuration with a fixed 90 degree angle between the mirror and sample. The entire mirror/sample assembly is rotated in 0.1 degree increments to change the grating pitch from ~ 200 nm to ~ 280 nm (35 to 55 degrees) over an ~ 2 cm x 2 cm exposure area.

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	A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:		A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:

	* [[Photoluminescence PL Setup (Custom)]]		*[[Photoluminescence PL Setup (Custom)]]

	=Detailed Specifications=		=Detailed Specifications=

	*15 mW single TEM mode HeCd laser		*15 mW single TEM mode HeCd laser
			*Max sample size: ~1.5 inch square
	*~ 2 cm x 2 cm uniform exposure area		*~ 2 cm x 2 cm uniform exposure area
	*~ several minute exposure times		*~ several minute exposure times

John d: link to PL system page

2020-10-09T15:06:24Z

link to PL system page

← Older revision		Revision as of 15:06, 9 October 2020
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	[[Lithography Recipes#Chemicals Stocked .2B Datasheets\|THMR-3600HP]] resist spin-coated to ~ 80 nm thickness is used for grating exposure. 2-D gratings can be formed by rotating the sample and doing multiple exposures. Total exposure times are controlled by a manual shutter and are generally several minutes in length.		[[Lithography Recipes#Chemicals Stocked .2B Datasheets\|THMR-3600HP]] resist spin-coated to ~ 80 nm thickness is used for grating exposure. 2-D gratings can be formed by rotating the sample and doing multiple exposures. Total exposure times are controlled by a manual shutter and are generally several minutes in length.

			A photoluminescence measurement setup is co-located on the optical table. Please see the page for the PL system for more info:
			* [[Photoluminescence PL Setup (Custom)]]

	=Detailed Specifications=		=Detailed Specifications=