ICP-Etch (Unaxis VLR) - Revision history

John d: pasted recipes section

2024-08-06T22:38:39Z

pasted recipes section

← Older revision		Revision as of 22:38, 6 August 2024
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	*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]		*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]

⚫	==Recipes==

		⚫	=Recipes=
	*[[ICP Etching Recipes#ICP-Etch%20.28Unaxis%20VLR.29\|ICP Etching Recipes > '''ICP-Etch (Unaxis VLR)''']]
⚫	**''Includes Process Control Data ~~for InP~~ ~~etching.''~~

		⚫	==Process Control Data (Unaxis VLR)==
	<br />

			*[[Unaxis VLR Etch - Process Control Data\|InP Etch - Process Control Data]]

			==GaAs-AlGaAs Etch (Unaxis VLR)==

			*[//wiki.nanotech.ucsb.edu/wiki/images/4/4e/15-GaAs_etch-Unaxis_ICP_etcher.pdf GaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]
			*[//wiki.nanotech.ucsb.edu/wiki/images/1/1f/14-AlAs-GR-cal_etch-Unaxis_ICP_etcher.pdf AlGaAs Etch Recipe (Cl<sub>2</sub>N<sub>2</sub> 30C)]

			==InP-InGaAs-InAlAs Etch (Unaxis VLR)==

			*[//wiki.nanotech.ucsb.edu/wiki/images/9/90/18-InP-based_etching-Cl2N2Ar.pdf InP-based Material Etch Profile (Cl<sub>2</sub>N<sub>2</sub>Ar200C)]
			*[//wiki.nanotech.ucsb.edu/wiki/images/a/ad/17-InP%26InGaAs_etch-Cl2H2Ar-Unaxis-VLR.pdf InP-InGaAs Etch Profile (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]
			*[//wiki.nanotech.ucsb.edu/wiki/images/6/6e/SiO2-Mask_Etch_Recipe_for_Unaxis_Cl2_Etch.pdf Recipe of Etching SiO<sub>2</sub> Mask for Cl<sub>2</sub> Etch (ICP#2)]
			*[[InP Etch Test Result in Details\|InP Etch Historical Data (Cl<sub>2</sub>H<sub>2</sub>Ar 200C)]]
			*[[InP Etch Rate and Selectivity (InP/SiO2)\|InP Etch Test]]
			*[//wiki.nanotech.ucsb.edu/wiki/images/a/ac/Lower-Etch-Rate_InP_Etch_using_Unaxis_PM1_tool_at_200_C.pdf Lower etch-rate InP Etch (Cl<sub>2</sub>N<sub>2</sub> 200C)]

			==GaN Etch (Unaxis VLR)==

			*[//wiki.nanotech.ucsb.edu/wiki/images/d/df/09-Plasma_Etching_of_GaN-UnaxisPM1.pdf GaN Etch Recipe (Cl<sub>2</sub>BCl<sub>3</sub>N<sub>2</sub>Ar 85C)]

			==GaSb Etch (Unaxis VLR)==
			''Available - ask staff''

			==Cleaning Recipes (Unaxis VLR)==
			''To Be Added: Required cleaning time & recipes''

John d: note that tool is decommissioned, point to Oxforrd Etcher

2024-08-06T20:29:11Z

note that tool is decommissioned, point to Oxforrd Etcher

← Older revision		Revision as of 20:29, 6 August 2024
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	\|materials =		\|materials =
	\|toolid=30		\|toolid=30
	}}		}}
			'''This tool has been decommissioned. Please use the [[Oxford ICP Etcher (PlasmaPro 100 Cobra)\|<u>Oxford Cobra ICP Etcher</u>]] for III-V etching instead. -- 2023 Demis D. John.'''

	==About==		==About==

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	*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]		*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]

	== Recipes ==		==Recipes==

	* [[ICP Etching Recipes#ICP-Etch%20.28Unaxis%20VLR.29\|ICP Etching Recipes > '''ICP-Etch (Unaxis VLR)''']]		*[[ICP Etching Recipes#ICP-Etch%20.28Unaxis%20VLR.29\|ICP Etching Recipes > '''ICP-Etch (Unaxis VLR)''']]
	** ''Includes Process Control Data for InP etching.''		**''Includes Process Control Data for InP etching.''

	<br />		<br />

John d: link to recipes, reduce headers to "heading level 1" (were "title" level)

2022-09-29T23:31:52Z

link to recipes, reduce headers to "heading level 1" (were "title" level)

← Older revision		Revision as of 23:31, 29 September 2022
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	\|toolid=30		\|toolid=30
	}}		}}
	=About=		==About==

	This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.		This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.

	=== Cluster Configuration ===		===Cluster Configuration===
	A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.		A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

	* '''PM3''': [[ICP-PECVD (Unaxis VLR)\|ICP-PECVD Deposition]]		*'''PM3''': [[ICP-PECVD (Unaxis VLR)\|ICP-PECVD Deposition]]
	* '''PM1''': ICP Etch (this page)		*'''PM1''': ICP Etch (this page)

	=Detailed Specifications=		==Detailed Specifications==

	*1000 W ICP source, 600 W RF Bias Source		*1000 W ICP source, 600 W RF Bias Source
Line 31:		Line 31:
	*Pieces possible by mounting to 4 ” wafer with thermal compound		*Pieces possible by mounting to 4 ” wafer with thermal compound

	=Documentation=		==Documentation==

	*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]		*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]

			== Recipes ==

			* [[ICP Etching Recipes#ICP-Etch%20.28Unaxis%20VLR.29\|ICP Etching Recipes > '''ICP-Etch (Unaxis VLR)''']]
			** ''Includes Process Control Data for InP etching.''

			<br />

Silva at 17:46, 30 August 2022

2022-08-30T17:46:24Z

← Older revision		Revision as of 17:46, 30 August 2022
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	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=UnaxisPECVD.jpg		\|picture=UnaxisPECVD.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Tony Bosch		\|super= Tony Bosch
			\|super2= Don Freeborn
	\|phone=(805)839-3918x217		\|phone=(805)839-3918x217
	\|location=Bay 1		\|location=Bay 1

Jcrode: Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/"

2020-04-07T01:31:57Z

Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/"

← Older revision		Revision as of 01:31, 7 April 2020
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	=Documentation=		=Documentation=

	*[//~~www~~.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]		*[//wiki.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]

John d: added Cluster Config / oink to each modules tool page

2019-11-27T22:26:06Z

added Cluster Config / oink to each modules tool page

← Older revision		Revision as of 22:26, 27 November 2019
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	\|toolid=30		\|toolid=30
	}}		}}
	= About =		=About=

	This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.		This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.

			=== Cluster Configuration ===
⚫	= Detailed Specifications =
			A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.

			* '''PM3''': [[ICP-PECVD (Unaxis VLR)\|ICP-PECVD Deposition]]
⚫	*1000 W ICP source, 600 W RF Bias Source
			* '''PM1''': ICP Etch (this page)
⚫	*30 - 200°C sample temperature for etching

⚫	*Laser monitoring available
		⚫	=Detailed Specifications=
⚫	*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, H<sub>2</sub>, SF<sub>6</sub>,and O<sub>2</sub> in etch chamber

⚫	*Multiple 4” diameter wafer capable system
		⚫	*1000 W ICP source, 600 W RF Bias Source
		⚫	*30 - 200°C sample temperature for etching
		⚫	*Laser monitoring available
		⚫	*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, H<sub>2</sub>, SF<sub>6</sub>,and O<sub>2</sub> in etch chamber
		⚫	*Multiple 4” diameter wafer capable system
	*Pieces possible by mounting to 4 ” wafer with thermal compound		*Pieces possible by mounting to 4 ” wafer with thermal compound

	=Documentation=		=Documentation=

	*[~~[media:~~PM1_Wiki_Operational_Procedure_3-14-14.pdf\|Operating Instructions]]		*[//www.nanotech.ucsb.edu/wiki/images/8/80/PM1_Wiki_Operational_Procedure_3-14-14.pdf Operating Instructions]

Bosch: /* About */

2014-03-18T20:17:10Z

About

← Older revision		Revision as of 20:17, 18 March 2014
Line 13:		Line 13:
	= About =		= About =

	This system is configured as an ICP etching tool with 1000 W ICP power, ~~500~~ W RF substrate power, and RT - 200°C operation with back-side He ~~cooling and a clamp~~ to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.		This system is configured as an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and 30C - 200°C operation with back-side He to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> for gas sources and can be used to etch a variety of materials from compound semiconductors to metals. The high temperature etching is specifically useful for etching of high Indium containing compound semiconductors such as InP, where etch product volatility is an issue. High aspect ratio, smooth vertical wall, InP and related compound semiconductor (InGaAs, InAlAs, InGaAsP, etc.) etching is done in this system. The chamber is configured for 4" wafers. Pieces are handled by using a silicone-based thermal heat sink compound. Both sapphire and silicon carrier wafers are available. Laser end-point monitoring is also included in the system.

	= Detailed Specifications =		= Detailed Specifications =

Bosch: /* Detailed Specifications */

2014-03-18T20:15:02Z

Detailed Specifications

← Older revision		Revision as of 20:15, 18 March 2014
Line 20:		Line 20:
	*30 - 200°C sample temperature for etching		*30 - 200°C sample temperature for etching
	*Laser monitoring available		*Laser monitoring available
	*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, H<sub>2</sub>,and O<sub>2</sub> in etch chamber		*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, H<sub>2</sub>, SF<sub>6</sub>,and O<sub>2</sub> in etch chamber
	*Multiple 4” diameter wafer capable system		*Multiple 4” diameter wafer capable system
	*Pieces possible by mounting to 4 ” wafer with thermal compound		*Pieces possible by mounting to 4 ” wafer with thermal compound

Bosch: /* Detailed Specifications */

2014-03-18T20:13:21Z

Detailed Specifications

← Older revision		Revision as of 20:13, 18 March 2014
Line 20:		Line 20:
	*30 - 200°C sample temperature for etching		*30 - 200°C sample temperature for etching
	*Laser monitoring available		*Laser monitoring available
	*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber		*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, H<sub>2</sub>,and O<sub>2</sub> in etch chamber
	*Multiple 4” diameter wafer capable system		*Multiple 4” diameter wafer capable system
	*Pieces possible by mounting to 4 ” wafer with thermal compound		*Pieces possible by mounting to 4 ” wafer with thermal compound

Bosch: /* Detailed Specifications */

2014-03-18T20:12:27Z

Detailed Specifications

← Older revision		Revision as of 20:12, 18 March 2014
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	= Detailed Specifications =		= Detailed Specifications =

	*1000 W ICP source, ~~500~~ W RF ~~Sample~~ Bias Source ~~in etching chamber~~		*1000 W ICP source, 600 W RF Bias Source
	*RT - 200°C sample temperature for etching		*30 - 200°C sample temperature for etching
	*Laser monitoring available		*Laser monitoring available
	*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber		*Cl<sub>2</sub>, BCl<sub>3</sub>, Ar, N<sub>2</sub>, and O<sub>2</sub> in etch chamber