ICP-PECVD (Unaxis VLR) - Revision history

John d: added Process Control Data section

2023-05-23T17:35:15Z

added Process Control Data section

← Older revision		Revision as of 17:35, 23 May 2023
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	==Recipes==		==Recipes==
	You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 '''<u>PECVD Recipes page</u>''']		You can find recipes for this tool on the '''Wiki > Recipes >''' [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 '''<u>PECVD Recipes page</u>''']

			== Process Control Data ==
			You can see calibration data for the thin-films on this tool at the '''Recipes >''' [[PECVD Recipes#Process Control Data .28Unaxis ICP-PECVD.29\|'''<u>Process Control Data page</u>''']].

John d: /* About */ added SiO2 gap-fill note

2022-10-27T00:11:01Z

About: added SiO2 gap-fill note

← Older revision		Revision as of 00:11, 27 October 2022
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	}}		}}
	=About=		=About=
	This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.		This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized. Processes are available for Gap-filling with SiO<sub>2</sub>.

	===Cluster Configuration===		===Cluster Configuration===

Silva at 17:31, 30 August 2022

2022-08-30T17:31:42Z

← Older revision		Revision as of 17:31, 30 August 2022
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	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=UnaxisPECVD.jpg		\|picture=UnaxisPECVD.jpg
	\|type = Vacuum Deposition		\|type = Vacuum Deposition
	\|super= Tony Bosch		\|super= Tony Bosch
			\|super2= Don Freeborn
	\|phone=(805)839-3918x217		\|phone=(805)839-3918x217
	\|location=Bay 1		\|location=Bay 1

John d: /* Detailed Specifications */

2022-05-20T17:46:39Z

Detailed Specifications

← Older revision		Revision as of 17:46, 20 May 2022
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	*Pieces possible by mounting or placing on 4 ” wafer		*Pieces possible by mounting or placing on 4 ” wafer

	The ~~system~~ currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the normal Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared. This gas is '''expensive''' and thus more applicable to optical ~~application~~ than to general-purpose SiN films.		The Deposition chamber currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the normal Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared. This gas is '''expensive''' and thus more applicable to optical applications than to general-purpose SiN films.

	=Documentation=		=Documentation=

John d: /* Recipes */ format link to bold/underline

2022-03-29T20:30:01Z

Recipes: format link to bold/underline

← Older revision		Revision as of 20:30, 29 March 2022
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	==Recipes==		==Recipes==
	You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]		You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 '''<u>PECVD Recipes page</u>''']

John d: /* About */ mention SiD4 config and expense/applicaiton

2022-02-17T20:44:48Z

About: mention SiD4 config and expense/applicaiton

← Older revision		Revision as of 20:44, 17 February 2022
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	*Multiple 4” diameter wafer capable system		*Multiple 4” diameter wafer capable system
	*Pieces possible by mounting or placing on 4 ” wafer		*Pieces possible by mounting or placing on 4 ” wafer

			The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the normal Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared. This gas is '''expensive''' and thus more applicable to optical application than to general-purpose SiN films.

	=Documentation=		=Documentation=
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	*Online Training Video:		*Online Training Video:
	**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=1af6f3ce-8fc4-4a50-884a-ae3600d2863d <u>Unaxis ICP-PECVD Training</u>]		**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=1af6f3ce-8fc4-4a50-884a-ae3600d2863d <u>Unaxis ICP-PECVD Training</u>]
	**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.		**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''

	You must log in using your UCSB ID Net account information BEFORE viewing the video or you will have to watch the video again.''		You must log in using your UCSB ID Net account information BEFORE viewing the video or you will have to watch the video again.

	== Recipes ==		==Recipes==
	You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]		You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]

Bosch t: /* Documentation */

2022-02-08T16:15:59Z

Documentation

← Older revision		Revision as of 16:15, 8 February 2022
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	*[[Unaxis wafer coating procedure]] - ''process flow for achieving high-quality coatings.''		*[[Unaxis wafer coating procedure]] - ''process flow for achieving high-quality coatings.''
	**For particle counting procedure, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]		**For particle counting procedure, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]

			*Online Training Video:
			**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=1af6f3ce-8fc4-4a50-884a-ae3600d2863d <u>Unaxis ICP-PECVD Training</u>]
			**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.
			You must log in using your UCSB ID Net account information BEFORE viewing the video or you will have to watch the video again.''

	== Recipes ==		== Recipes ==

John d: /* Documentation */ redlink the SOP, explain the purpose of the "procedure"

2020-07-16T07:08:57Z

Documentation: redlink the SOP, explain the purpose of the "procedure"

← Older revision		Revision as of 07:08, 16 July 2020
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	=Documentation=		=Documentation=

	*Operating Instructions		*[[Unaxis VLR ICP-PECVD - Std. Operating Procedure\|Operating Instructions]]
	*[[Unaxis wafer coating procedure]]		*[[Unaxis wafer coating procedure]] - ''process flow for achieving high-quality coatings.''
	*For particle counting ~~method~~, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]		**For particle counting procedure, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]

	== Recipes ==		== Recipes ==

Biljana at 18:47, 2 July 2020

2020-07-02T18:47:30Z

← Older revision		Revision as of 18:47, 2 July 2020
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	*Operating Instructions		*Operating Instructions
	*[~~https://wiki.nanotech.ucsb.edu/wiki/File:Unaxis_SOP_3-30-2020.docx~~ ~~Wafer~~ coating procedure]		*[[Unaxis wafer coating procedure]]
	*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]		*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]

Biljana: /* Documentation */

2020-07-02T18:44:07Z

Documentation

← Older revision		Revision as of 18:44, 2 July 2020
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	*Operating Instructions		*Operating Instructions
	*[[Wafer coating procedure]]		*[https://wiki.nanotech.ucsb.edu/wiki/File:Unaxis_SOP_3-30-2020.docx Wafer coating procedure]
	*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]		*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]