Lithography Recipes - Revision history

John d: /* Lift-Off Recipes */ link to LOR lift-off

2026-09-23T22:35:06Z

Lift-Off Recipes: link to LOR lift-off

← Older revision		Revision as of 22:35, 23 September 2026
Line 385:		Line 385:
	***Use the new "101B" developer, which replaced the "SAL/101A" developers but works the same.		***Use the new "101B" developer, which replaced the "SAL/101A" developers but works the same.
	**There are 2 [[DUV Flood Expose\|DUV Flood exposure]] + 101B develop steps because the first exposure doesn't expose the entire PMGI - because PMGI absorbs DUV very strongly so the light doesn't penetrate to the bottom of thick PMGI on the first exposure.		**There are 2 [[DUV Flood Expose\|DUV Flood exposure]] + 101B develop steps because the first exposure doesn't expose the entire PMGI - because PMGI absorbs DUV very strongly so the light doesn't penetrate to the bottom of thick PMGI on the first exposure.
			*[[Lift-off DUV Lift-off: LOR Underlayers\|DUV Lift-off: LOR Underlayers]]
			**1µm (LOR-10A) & 30µm (LOR-30C) versions
			**Written for ASML DUV Stepper, but should work for any Imaging (top) resist, incl. I-Line tools.
	*[[Lift-Off with DUV Imaging + PMGI Underlayer\|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]		*[[Lift-Off with DUV Imaging + PMGI Underlayer\|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
	**''Single-expose/develop process''		**''Single-expose/develop process''

John d: /* Photolithography Recipes */ added col for Picomaster - looks bad, need to fix,

2026-09-23T22:30:54Z

Photolithography Recipes: added col for Picomaster - looks bad, need to fix,

@@ Line 97: / Line 97: @@
 ==Photolithography Recipes==
 ''Click the tool title to go to recipes for that tool.''
@@ Line 142: / Line 121: @@
 ! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
 {{LithRecipe Table}}
 |- bgcolor="EEFFFF"<!-- This is the Row color: lightblue -->
 | bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]]
@@ Line 254: / Line 234: @@
 ! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
 {{LithRecipe Table}}
 |-
 | bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR]
@@ Line 329: / Line 310: @@
 ! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
 {{LithRecipe Table}}
 |-
 | bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
@@ Line 356: / Line 338: @@
 ! bgcolor="#D0E7FF" align="center" |
 {{LithRecipe Table}}
 |}
 <!-- end Litho Recipes table -->
 ==Lift-Off Recipes==

John d: /* Chemicals Stocked + Datasheets */ added LOR datasheets + link to lift-off recipes

2026-09-23T22:16:59Z

Chemicals Stocked + Datasheets: added LOR datasheets + link to lift-off recipes

← Older revision		Revision as of 22:16, 23 September 2026
Line 379:		Line 379:
	**''Up to ~65nm metal thickness & ~350nm gap between metal''		**''Up to ~65nm metal thickness & ~350nm gap between metal''
	**''Use thicker PMGI for thicker metals''		**''Use thicker PMGI for thicker metals''
	*[[Lift-off DUV Lift-off: UV6 imaging resist + LOR Underlayers\|DUV Lift-off: UV6 imaging resist + LOR Underlayers]]
	**''Single expose/develop process''
	**''Allows for thicker metals, but wider undercut.''

	==[[E-Beam Lithography System (JEOL JBX-6300FS)\|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==		==[[E-Beam Lithography System (JEOL JBX-6300FS)\|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==
Line 1,038:		Line 1,035:

	;<div id="Underlayers"><big>Underlayers</big></div>		;<div id="Underlayers"><big>Underlayers</big></div>
			See [[Lithography Recipes#Lift-Off Recipes\|this page for lift-off recipes.]]

	*{{fl\|PMGI-Underlayer-Datasheet.pdf\|PMGI (PMGI SF3,5,8,11,15)}}		*{{fl\|PMGI-Underlayer-Datasheet.pdf\|PMGI (PMGI SF3,5,8,11,15)}}
			*LOR ([[Media:Lor pds.pdf\|LOR 10A & LOR 30C]])
	*{{fl\|LOL2000-Underlayer-Datasheet.pdf\|Shipley LOL2000}}		*{{fl\|LOL2000-Underlayer-Datasheet.pdf\|Shipley LOL2000}}

John d: /* Lift-Off Recipes */ added UV6 + LOR link

2026-09-23T22:15:33Z

Lift-Off Recipes: added UV6 + LOR link

← Older revision		Revision as of 22:15, 23 September 2026
Line 379:		Line 379:
	**''Up to ~65nm metal thickness & ~350nm gap between metal''		**''Up to ~65nm metal thickness & ~350nm gap between metal''
	**''Use thicker PMGI for thicker metals''		**''Use thicker PMGI for thicker metals''
			*[[Lift-off DUV Lift-off: UV6 imaging resist + LOR Underlayers\|DUV Lift-off: UV6 imaging resist + LOR Underlayers]]
			**''Single expose/develop process''
			**''Allows for thicker metals, but wider undercut.''

	==[[E-Beam Lithography System (JEOL JBX-6300FS)\|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==		==[[E-Beam Lithography System (JEOL JBX-6300FS)\|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==

John d: /* Chemicals Stocked + Datasheets */ removed honewell SOG

2026-08-24T16:24:38Z

Chemicals Stocked + Datasheets: removed honewell SOG

← Older revision		Revision as of 16:24, 24 August 2026
Line 1,077:		Line 1,077:
	*{{fl\|BCB-adhesion.pdf\|BCB Adhesion Notes from Vendor}}		*{{fl\|BCB-adhesion.pdf\|BCB Adhesion Notes from Vendor}}
	*{{fl\|BCB-rework.pdf\|BCB rework Notes from Vendor}}		*{{fl\|BCB-rework.pdf\|BCB rework Notes from Vendor}}
	*{{fl\|512B-Datasheet-revA.pdf\|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}}
	*{{fl\|512B-Application-Data-Bake-revA.pdf\|Honeywell 512B Apps Data}}

	;<div id="Developers"><big>Developers</big></div>		;<div id="Developers"><big>Developers</big></div>

Biljana: /* Process Ranking Table */

2026-07-29T00:03:27Z

Process Ranking Table

← Older revision		Revision as of 00:03, 29 July 2026
Line 150:		Line 150:
	\|		\|
	\|{{rl\|MLA_Recipes\|Positive Resist (MLA 150)}}		\|{{rl\|MLA_Recipes\|Positive Resist (MLA 150)}}
			\|{{rl\|Direct-Write Lithography Recipes\|Positive Resist (Raith PicoMaster)}}

	\|-<!-- This is a White row color -->		\|-<!-- This is a White row color -->
Line 167:		Line 168:
	\|		\|
	\|{{rl\|MLA_Recipes\|Positive Resist (MLA 150)}}		\|{{rl\|MLA_Recipes\|Positive Resist (MLA 150)}}
			\|{{rl\|Direct-Write Lithography Recipes\|Positive Resist (Raith PicoMaster)\|R1}}

	\|-		\|-
	\| bgcolor="#D0E7FF" align="center" \|[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]		\| bgcolor="#D0E7FF" align="center" \|[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620]
Line 191:		Line 194:
	\|		\|
	\|{{rl\|MLA Recipes\|Positive Resist (MLA 150)\|R3}}		\|{{rl\|MLA Recipes\|Positive Resist (MLA 150)\|R3}}
			\|{{rl\|Direct-Write Lithography Recipes\|Positive Resist (Raith)\|R3}}
	\|-		\|-
	\| bgcolor="#D0E7FF" align="center" \|[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]		\| bgcolor="#D0E7FF" align="center" \|[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8]

Biljana: /* Process Ranking Table */

2026-07-28T23:42:46Z

Process Ranking Table

← Older revision		Revision as of 23:42, 28 July 2026
Line 132:		Line 132:
	{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"		{\| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
	\|-		\|-
	! colspan="7" height="45" \|<div style="font-size: 150%;">Photolithography Recipes</div>		! colspan="8" height="45" \|<div style="font-size: 150%;">Photolithography Recipes</div>

	\|-		\|-
Line 138:		Line 138:
	! colspan="2" align="center" \|'''[[Contact Alignment Recipes\|<big>Contact Aligner Recipes</big>]]'''		! colspan="2" align="center" \|'''[[Contact Alignment Recipes\|<big>Contact Aligner Recipes</big>]]'''
	! colspan="3" align="center" \|'''[[Stepper Recipes\|<big>Stepper Recipes</big>]]'''		! colspan="3" align="center" \|'''[[Stepper Recipes\|<big>Stepper Recipes</big>]]'''
	! align="center" \|[[Direct-Write Lithography Recipes\|Direct-Write Litho. Recipes]]		! colspan="2" align="center" \|[[Direct-Write Lithography Recipes\|Direct-Write Litho. Recipes]]
	\|-		\|-
	! width="150" bgcolor="#D0E7FF" align="center" \|'''Positive Resists'''		! width="150" bgcolor="#D0E7FF" align="center" \|'''Positive Resists'''
Line 150:		Line 150:
	\|		\|
	\|{{rl\|MLA_Recipes\|Positive Resist (MLA 150)}}		\|{{rl\|MLA_Recipes\|Positive Resist (MLA 150)}}
	\|{{rl\|Raith PicoMaster Recipes\|Positive Resist (Raith PicoMaster XF}}

	\|-<!-- This is a White row color -->		\|-<!-- This is a White row color -->

Biljana: /* Process Ranking Table */

2026-07-28T23:30:05Z

Process Ranking Table

← Older revision		Revision as of 23:30, 28 July 2026
Line 150:		Line 150:
	\|		\|
	\|{{rl\|MLA_Recipes\|Positive Resist (MLA 150)}}		\|{{rl\|MLA_Recipes\|Positive Resist (MLA 150)}}
			\|{{rl\|Raith PicoMaster Recipes\|Positive Resist (Raith PicoMaster XF}}

	\|-<!-- This is a White row color -->		\|-<!-- This is a White row color -->
	\| bgcolor="#D0E7FF" align="center" \|[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]		\| bgcolor="#D0E7FF" align="center" \|[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210]

John d: /* Lift-Off Recipes */ link to DUV_Flood_Expose

2026-02-04T23:05:20Z

Lift-Off Recipes: link to DUV_Flood_Expose

← Older revision		Revision as of 23:05, 4 February 2026
Line 364:		Line 364:
	*{{fl\|Bi-LayerContactprocesswithPMGI.pdf\|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}		*{{fl\|Bi-LayerContactprocesswithPMGI.pdf\|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
	**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''		**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
	**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''		**''Uses multiple [[DUV Flood Expose\|DUV Flood exposure]]/develop cycles to create undercut.''
	**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''		**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
	**<u>Updates to the process:</u>		**<u>Updates to the process:</u>
	***You now only need to do 5min DUV Flood exposure each cycle (lamp optics were replaced)		***You now only need to do 5min [[DUV Flood Expose\|DUV Flood exposure]] each cycle (lamp optics were replaced)
	***Use the new "101B" developer, which replaced the "SAL/101A" developers but works the same.		***Use the new "101B" developer, which replaced the "SAL/101A" developers but works the same.
	**There are 2 DUV Flood exposure + 101B develop steps because the first exposure doesn't expose the entire PMGI - because PMGI absorbs DUV very strongly so the light doesn't penetrate to the bottom of thick PMGI on the first exposure.		**There are 2 [[DUV Flood Expose\|DUV Flood exposure]] + 101B develop steps because the first exposure doesn't expose the entire PMGI - because PMGI absorbs DUV very strongly so the light doesn't penetrate to the bottom of thick PMGI on the first exposure.
	*[[Lift-Off with DUV Imaging + PMGI Underlayer\|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]		*[[Lift-Off with DUV Imaging + PMGI Underlayer\|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
	**''Single-expose/develop process''		**''Single-expose/develop process''

John d: /* General Photolithography Techniques */ add small-sample spinning

2025-12-05T18:41:31Z

General Photolithography Techniques: add small-sample spinning

← Older revision		Revision as of 18:41, 5 December 2025
Line 85:		Line 85:
	*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''		*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
	*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)\|Maskless Aligner]], EBR can help with autofocus issues.''		*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)\|Maskless Aligner]], EBR can help with autofocus issues.''
			*''For small samples (<1cm) some techniques here to reduce edge-bead via shims.''

	====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====		====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====