Nplaviola at 05:15, 24 August 2021

2021-08-24T05:15:08Z

← Older revision		Revision as of 05:15, 24 August 2021
Line 1:		Line 1:
	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=PECVD1.jpg		\|picture=PECVD1.jpg
	\|type = Vacuum Deposition		\|type = Vacuum Deposition

Nplaviola at 05:14, 24 August 2021

2021-08-24T05:14:52Z

← Older revision		Revision as of 05:14, 24 August 2021
Line 3:		Line 3:
	\|type = Vacuum Deposition		\|type = Vacuum Deposition
	\|super= Don Freeborn		\|super= Don Freeborn
			\|super2= Tony Bosch
	\|phone=(805)839-7975		\|phone=(805)839-7975
	\|location=Bay 3		\|location=Bay 3

Nplaviola: Created page with "{{tool|{{PAGENAME}} |picture=PECVD1.jpg |type = Vacuum Deposition |super= Don Freeborn |phone=(805)839-7975 |location=Bay 3 |email=dfreeborn@ucsb.edu |description = PECVD Plas..."

2021-08-24T04:21:29Z

Created page with "{{tool|{{PAGENAME}} |picture=PECVD1.jpg |type = Vacuum Deposition |super= Don Freeborn |phone=(805)839-7975 |location=Bay 3 |email=dfreeborn@ucsb.edu |description = PECVD Plas..."

New page

{{tool|{{PAGENAME}}
|picture=PECVD1.jpg
|type = Vacuum Deposition
|super= Don Freeborn
|phone=(805)839-7975
|location=Bay 3
|email=dfreeborn@ucsb.edu
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|materials =
|toolid=16
}}

__TOC__
== About ==

This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition. CF4/O2 plasmas are used to clean the chamber between depositions.

These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.

== Detailed Specifications ==

*Gases used: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
*~ 10mT ultimate chamber pressure
*13.56 Mhz excitation freq.
*Sample size: pieces to 6” wafers
*Automatic tuning network
*RF Power control
*Full computer operation
*Standard recipes for a variety of film thicknesses

==Documentation==
*[https://wiki.nanotech.ucsb.edu/w/images/d/d2/PECVD1_Operating_Instructions.pdf Operating Instructions]
*[[PECVD1 Wafer Coating Process|Wafer Coating Process Traveler]]
*For particle counting method, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]

== Recipes & Process Data ==
* Historical Characterization Data & Standard Recipes can be found at: [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|'''Recipes > Deposition > PECVD1''']]

Nick test - Revision history

Nplaviola at 05:15, 24 August 2021

Nplaviola at 05:14, 24 August 2021

Nplaviola: Created page with "{{tool|{{PAGENAME}} |picture=PECVD1.jpg |type = Vacuum Deposition |super= Don Freeborn |phone=(805)839-7975 |location=Bay 3 |email=dfreeborn@ucsb.edu |description = PECVD Plas..."