PECVD1 Wafer Coating Process - Revision history

John d: corrected titles

2020-12-10T20:16:45Z

corrected titles

← Older revision		Revision as of 20:16, 10 December 2020
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	There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).		There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).

	=== Standard ~~Oxide~~ Deposition ===		=== Standard Si3N4 (Silicon-Nitride) Deposition ===

	==== SiN Deposition ====		==== SiN Deposition ====
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	#* Log out		#* Log out

	=== Standard ~~Nitride~~ Deposition ===		=== Standard Oxide, SiO2 (Silicon Dioxide) Deposition ===

	==== SiO2 Deposition ====		==== SiO2 Deposition ====

2020-04-22T23:57:22Z

← Older revision		Revision as of 23:57, 22 April 2020
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	There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).		There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).

	=== ~~PECVD#1~~ ===		=== Standard Oxide Deposition ===

	==== SiN ~~deposition~~ ====		==== SiN Deposition ====
	# Log in to PECVD #1		# Log in to PECVD #1
	# Seasoning		# Seasoning
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	#* Log out		#* Log out

	=== ~~SiO2~~ ~~deposition~~ ===		=== Standard Nitride Deposition ===

			==== SiO2 Deposition ====
	#Log in to PECVD #1		#Log in to PECVD #1
	# Seasoning		# Seasoning

2020-04-22T23:33:58Z

SiN and SiO2 depositions

← Older revision		Revision as of 23:33, 22 April 2020
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	There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run ~~each~~ deposition.		There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).

	=== PECVD#1 ~~Standard Depositions @250C~~ ===		=== PECVD#1 ===

	==== SiN deposition ====		==== SiN deposition ====

2020-04-22T23:31:37Z

PECVD#1 SiN @250C

← Older revision		Revision as of 23:31, 22 April 2020
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	There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.		There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.

	=== PECVD#1 ~~SiN~~ @250C ===		=== PECVD#1 Standard Depositions @250C ===

	==== SiN deposition ====		==== SiN deposition ====
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	#* Log out		#* Log out

	=== ~~PECVD#1~~ SiO2 ~~@250C~~ ===		=== SiO2 deposition ===

	==== SiO2 deposition ====
	#Log in to PECVD #1		#Log in to PECVD #1
	# Seasoning		# Seasoning

2020-04-22T23:30:42Z

PECVD#1 SiN @250C

← Older revision		Revision as of 23:30, 22 April 2020
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	There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.		There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.

	==== PECVD#1 SiN @250C ====		=== PECVD#1 SiN @250C ===

			==== SiN deposition ====
	# Log in to PECVD #1		# Log in to PECVD #1
	# Seasoning		# Seasoning
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	#* Log out		#* Log out

	==== PECVD#1 SiO2 @250C ====		=== PECVD#1 SiO2 @250C ===

			==== SiO2 deposition ====
	#Log in to PECVD #1		#Log in to PECVD #1
	# Seasoning		# Seasoning

2020-04-22T23:28:36Z

← Older revision		Revision as of 23:28, 22 April 2020
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	There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.		There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.

	=== PECVD#1 SiN @250C ===		==== PECVD#1 SiN @250C ====
	# Log in to PECVD #1		# Log in to PECVD #1
	# Seasoning		# Seasoning
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	#* Log out		#* Log out

	=== PECVD#1 SiO2 @250C ===		==== PECVD#1 SiO2 @250C ====
	#Log in to PECVD #1		#Log in to PECVD #1
	# Seasoning		# Seasoning

2020-04-22T23:26:45Z

← Older revision		Revision as of 23:26, 22 April 2020
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	There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.		There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.

	=== SiN @250C ===		=== PECVD#1 SiN @250C ===
	# Log in to PECVD #1		# Log in to PECVD #1
	# Seasoning		# Seasoning
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	#* Log out		#* Log out

	=== SiO2 @250C ===		=== PECVD#1 SiO2 @250C ===
	#Log in to PECVD #1		#Log in to PECVD #1
	# Seasoning		# Seasoning

2020-04-22T23:23:43Z

← Older revision		Revision as of 23:23, 22 April 2020
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			There are two standard recipes for SiN and SiO2 at 250C in PECVD#1. Instructions bellow explain how to run each deposition.
	The wafers for process calibration are ordered from a wafer supplier that sells high grade, quality wafers. these are 4"Si wafers, with low particle count (Particles: <=10 @ >=0.3 microns). Wafers should be handled carefully, because every loading and unloading will add some particulates.

		⚫	=== SiN @250C ===
	Surfscan 6200 (located in bay5) is used for scanning wafers. There are two standard recipes that could be used for scanning wafers: UCSBTEST1 (for scanning 8” wafers) and UCSBTEST2 (for scanning 4"wafers). The recipe UCSBTEST2 is used as a template to create other two standard recipes: "UCSB Gain4" (measuring small particles 0.16-1.6um) and "UCSB Gain2" (measuring larger particles 1.6-28um).

	We have cassettes only for 4" and 8" wafers. If you plan to scan wafers that have different size, you need to provide your own cassette and calibrate it. If you need to scan wafer pieces, you need to develop your own procedure how to scan it.The section bellow describes how to run standard recipes for SiN and SiO2 at 250C in PECVD#1.

⚫	== SiN @250C ==
	# Log in to PECVD #1		# Log in to PECVD #1
	# Seasoning		# Seasoning
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	#* Log out		#* Log out

	== SiO2 @250C ==		=== SiO2 @250C ===
	#Log in to PECVD #1		#Log in to PECVD #1
	# Seasoning		# Seasoning

2020-04-22T23:19:05Z

SiO2 @250C

← Older revision		Revision as of 23:19, 22 April 2020
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	#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.		#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
	#* Pump down.		#* Pump down.
	#* Load the deposition recipe( SiO2@250C), and run it.		#* Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29\|historical data]].
	#* Unload the wafer.		#* Unload the wafer.
	# Cleaning		# Cleaning

2020-04-22T23:18:05Z

← Older revision		Revision as of 23:18, 22 April 2020
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	#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.		#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
	#* Pump down.		#* Pump down.
	#* Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_1_~~(PlasmaTherm_790)~~ historical data].		#* Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_1_.28PlasmaTherm_790.29 historical data].
	#* Unload the wafer.		#* Unload the wafer.
	# Cleaning		# Cleaning