Packaging Recipes - Revision history

John d: /* Dual-Pass Dicing */ added Biljana as author

2026-06-11T22:41:55Z

Dual-Pass Dicing: added Biljana as author

← Older revision		Revision as of 22:41, 11 June 2026
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	b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um		b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

	5. Recipe example for Dual Dicing and Kerf for Ga<sub>2</sub>O<sub>3</sub>		5. Recipe example for Dual Dicing and Kerf for Ga<sub>2</sub>O<sub>3</sub>

	<gallery>		<gallery>
	File:Dicing Thick Ga2O3.jpg\|Recipe example for Dicing Ga<sub>2</sub>O<sub>3</sub>		File:Dicing Thick Ga2O3.jpg\|Recipe example for Dicing Ga<sub>2</sub>O<sub>3</sub>
	File:Kerf 225um 660um thick Ga2O3 dual pass.png\|Measured kerf for Ga<sub>2</sub>O<sub>3</sub>		File:Kerf 225um 660um thick Ga2O3 dual pass.png\|Measured kerf for Ga<sub>2</sub>O<sub>3</sub> (with photoresist on surface)
	</gallery>		</gallery>
			Author: [[Biljana Stamenic]], 2026-06

	=== Partial Dicing ===		=== Partial Dicing ===
	For partial dicing, you need to do single-pass, dicing into substrate desired depth. Setting up the recipe:		For partial-depth dicing, you need to do single-pass, dicing into substrate desired depth. Setting up the recipe:

	1. Setup: Enter wafer thickness (example:750um), and tape (90um)		1. Setup: Enter wafer thickness (example:750um), and tape (90um)
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	5. Recipe example for Partial dicing into Si substrate		5. Recipe example for Partial dicing into Si substrate
	[[File:Partial dicing.jpeg~~\|left~~\|thumb\|150x150px]]		[[File:Partial dicing.jpeg\|thumb\|150x150px\|none\|Cut parameters for partial-depth cut]]
			Author: [[Biljana Stamenic]], 2026-06










	==[[Wafer Bonder (Logitech WBS7)]]==		==[[Wafer Bonder (Logitech WBS7)]]==

Biljana: /* Partial Dicing */

2026-06-10T21:23:13Z

Partial Dicing

← Older revision		Revision as of 21:23, 10 June 2026
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	a) Very thick Si (750um), used single pass, blade 2.187-2C-9RU-3, cutting speed=0.5mm/sec, spindle speed=30KRPM		a) Very thick Si (750um), used single pass, blade 2.187-2C-9RU-3, cutting speed=0.5mm/sec, spindle speed=30KRPM

	5. Recipe example for Partial dicing Si substrate		5. Recipe example for Partial dicing into Si substrate
	[[File:Partial dicing.jpeg\|left\|thumb\|150x150px]]		[[File:Partial dicing.jpeg\|left\|thumb\|150x150px]]

Biljana: /* Partial Dicing */

2026-06-10T21:22:39Z

Partial Dicing

← Older revision		Revision as of 21:22, 10 June 2026
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	b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um		b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

	5. ~~Example~~ Recipe and Kerf for Ga<sub>2</sub>O<sub>3</sub>		5. Recipe example for Dual Dicing and Kerf for Ga<sub>2</sub>O<sub>3</sub>

	<gallery>		<gallery>
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	5. Recipe example for Partial dicing Si substrate		5. Recipe example for Partial dicing Si substrate
			[[File:Partial dicing.jpeg\|left\|thumb\|150x150px]]

Biljana: /* Dual-Pass Dicing */

2026-06-10T21:20:35Z

Dual-Pass Dicing

@@ Line 281: / Line 281: @@
 . Example of dicing different materials:
-a) Very thick Ga<sub>2</sub>O<sub>3</sub> (660um), used double pass, blade 2.2187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um
+a) Very thick Ga<sub>2</sub>O<sub>3</sub> (660um), used double pass, blade 2.187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um
-b) Very thick Sapphire (650um), used double pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um
+b) Very thick Sapphire (650um), used double pass, blade 2.187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um
 . Example Recipe and Kerf for Ga<sub>2</sub>O<sub>3</sub>
@@ Line 291: / Line 291: @@
 File:Kerf 225um 660um thick Ga2O3 dual pass.png|Measured kerf for Ga<sub>2</sub>O<sub>3</sub>
 </gallery>
 ==[[Wafer Bonder (Logitech WBS7)]]==

Biljana at 20:49, 10 June 2026

2026-06-10T20:49:21Z

← Older revision		Revision as of 20:49, 10 June 2026
Line 285:		Line 285:
	b) Very thick Sapphire (650um), used double pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um		b) Very thick Sapphire (650um), used double pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

	5. Example Recipe and Kerf for Ga<sub>2</sub>O<sub>3</sub> ~~<gallery>~~		5. Example Recipe and Kerf for Ga<sub>2</sub>O<sub>3</sub>

	File:Dicing Thick Ga2O3.jpg\|Example of dicing recipe for Ga2O3
			<gallery>
			File:Dicing Thick Ga2O3.jpg\|Recipe example for Dicing Ga<sub>2</sub>O<sub>3</sub>
	File:Kerf 225um 660um thick Ga2O3 dual pass.png\|Measured kerf for Ga<sub>2</sub>O<sub>3</sub>		File:Kerf 225um 660um thick Ga2O3 dual pass.png\|Measured kerf for Ga<sub>2</sub>O<sub>3</sub>
	</gallery>		</gallery>

Biljana: /* Dual-Pass Dicing */

2026-06-10T20:41:10Z

Dual-Pass Dicing

← Older revision		Revision as of 20:41, 10 June 2026
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	4. Example of dicing different materials:		4. Example of dicing different materials:

	a) Very thick ~~Ga2O3~~ (660um), used double pass, blade 2.2187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um		a) Very thick Ga<sub>2</sub>O<sub>3</sub> (660um), used double pass, blade 2.2187-8C-54RU-3, expected kerf ~(210-230)um, actual kerf ~225um

	b) Very thick Sapphire (650um), used double pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um		b) Very thick Sapphire (650um), used double pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

	5. Example Recipe and Kerf for Ga<sub>2</sub>O<sub>3</sub> <gallery>		5. Example Recipe and Kerf for Ga<sub>2</sub>O<sub>3</sub> <gallery>
	File:Dicing Thick Ga2O3.jpg\|~~Dicing~~ ~~recipe~~ ~~and~~ ~~kerf~~		File:Dicing Thick Ga2O3.jpg\|Example of dicing recipe for Ga2O3
	File:Kerf 225um 660um thick Ga2O3 dual pass.png		File:Kerf 225um 660um thick Ga2O3 dual pass.png\|Measured kerf for Ga<sub>2</sub>O<sub>3</sub>
	</gallery>		</gallery>

Biljana: /* Dual-Pass Dicing */ Explaining dual pass

2026-06-10T18:48:30Z

Dual-Pass Dicing: Explaining dual pass

@@ Line 267: / Line 267: @@
 === Dual-Pass Dicing ===
-For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pasxs, then cut the full wafer thickness on the second pass.
+For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pass, then cut the full wafer thickness on the second pass. Setting up the recipe:
 ==[[Wafer Bonder (Logitech WBS7)]]==

John d at 18:09, 10 June 2026

2026-06-10T18:09:22Z

← Older revision		Revision as of 18:09, 10 June 2026
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	<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.		<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

	<nowiki>**</nowiki> Refer to Dual-Pass Dicing process below.		<nowiki>**</nowiki> Refer to [[Packaging Recipes#Dual-Pass Dicing\|Dual-Pass Dicing]] process below.

	====Anatomy of a Blade====		====Anatomy of a Blade====

John d: /* Recommended Dicing Parameters */ added dual pass dicing.

2026-06-10T18:08:53Z

Recommended Dicing Parameters: added dual pass dicing.

← Older revision		Revision as of 18:08, 10 June 2026
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	\|5.3 - 6.5		\|5.3 - 6.5
	\|-		\|-
			\|Ga<sub>2</sub>O<sub>3</sub><sup>**</sup>
	\|Ga2O3
	\|2.187-8C-54RU-3		\|2.187-8C-54RU-3
	\|18		\|18
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	\|7		\|7
	\|-		\|-
	\|Sapphire		\|Sapphire<sup>**</sup>
	\|2.187-8C-54RU-3		\|2.187-8C-54RU-3
	\|18		\|18
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	\|}		\|}
	<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.		<nowiki>*</nowiki> If you do not see the material you want to dice listed, refer to the Mohs Hardness scale for Blade P/N.

			<nowiki>**</nowiki> Refer to Dual-Pass Dicing process below.

	====Anatomy of a Blade====		====Anatomy of a Blade====
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	=== Cut Depth Accuracy ===		=== Cut Depth Accuracy ===
	Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.		Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

⚫	Example: 650um Sapphire, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

⚫	Example: 660um Ga2O3, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~225um

	==== Procedure to improve cut depth accuracy ====		==== Procedure to improve cut depth accuracy ====
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	** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.		** eg. Depth to hit tape = 0.060mm + 0.070mm remaining uncut sample = 0.130mm cut depth.
	** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)		** (30µm will also work, you’ll just see it varies by ~20µm across the cut.)

			=== Dual-Pass Dicing ===
			For hard (≥ 9 Mohs Hardness) wafers thicker than 400µm or so, you likely need to do double-pass dicing, where you cut 1/2 of the thickness the first pasxs, then cut the full wafer thickness on the second pass.

		⚫	Example: 650um Sapphire, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

		⚫	Example: 660um Ga2O3, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~225um

	==[[Wafer Bonder (Logitech WBS7)]]==		==[[Wafer Bonder (Logitech WBS7)]]==

Biljana: /* Cut Depth Accuracy */ Kerf for sapphire and Ga2O3 using recipe with dual pass

2026-06-10T17:56:07Z

Cut Depth Accuracy: Kerf for sapphire and Ga2O3 using recipe with dual pass

← Older revision		Revision as of 17:56, 10 June 2026
Line 247:		Line 247:
	=== Cut Depth Accuracy ===		=== Cut Depth Accuracy ===
	Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.		Depth accuracy (distance between bottom of the blade and sample chuck) (a) is only accurate to ~20µm or so, and (b) varies by at least~10µm across the chuck. If you need to leave a certain amount of your substrate uncut, here is a way to improve the accuracy, adds ~30-60min to your process.

			Example: 650um Sapphire, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~240um

			Example: 660um Ga2O3, dual pass, blade 2.2187-8C-54RU-3, kerf ~(210-230)um, actual kerf ~225um

	==== Procedure to improve cut depth accuracy ====		==== Procedure to improve cut depth accuracy ====