RIE 1 (Custom) - Revision history

Reynolds t at 20:03, 13 June 2015

2015-06-13T20:03:34Z

← Older revision		Revision as of 20:03, 13 June 2015
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	{{tool\|{{PAGENAME}}		{{tool\|{{PAGENAME}}
	\|picture=~~RIE1~~.jpg		\|picture=RIE[[File:[[Example.jpg]][[Link title]]]]1.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Don Freeborn		\|super= Don Freeborn

Zwarburg at 13:43, 11 July 2012

2012-07-11T13:43:02Z

← Older revision		Revision as of 13:43, 11 July 2012
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	\|manufacturer = UCSB		\|manufacturer = UCSB
	\|materials =		\|materials =
			\|toolid=24
	}}		}}
	= About =		= About =

Zwarburg at 04:41, 1 July 2012

2012-07-01T04:41:44Z

← Older revision		Revision as of 04:41, 1 July 2012
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	{{tool\|{{PAGENAME}}		{{tool\|{{PAGENAME}}
	\|picture=~~e-beam2~~.jpg		\|picture=RIE1.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Don Freeborn		\|super= Don Freeborn

Zwarburg: moved RIE 1 to RIE 1 (Custom)

2012-06-28T19:48:08Z

moved RIE 1 to RIE 1 (Custom)

← Older revision	Revision as of 19:48, 28 June 2012
(No difference)

Zwarburg at 14:24, 28 June 2012

2012-06-28T14:24:15Z

← Older revision		Revision as of 14:24, 28 June 2012
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	\|materials =		\|materials =
	}}		}}

	= About =		= About =

Zwarburg at 00:58, 28 June 2012

2012-06-28T00:58:55Z

← Older revision		Revision as of 00:58, 28 June 2012
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	= Detailed Specifications =		= Detailed Specifications =
			*Etch gases include: Cl<sub>2</sub>, O<sub>2</sub>, Ar and He
			*Mid 1 E-7 Torr Ultimate Chamber Pressure
			*13.56 MHz excitation frequency
			*Sample size limited to approximately 2 inches
			*Masking materials include: Ni, Photoresist, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, SrF
			*Typical etch conditions for GaAs:
			**2mT Cl<sub>2</sub>
			**350 Volts Bias
			**~ 200 nm / min. Etch Rate


	*Temescal 10kV power supply
	*Temescal 4-pocket series 260 e-beam source
	*Electron beam controller with sweep rate and amplitude control
	*Cryo-pumped system with ~ 1e-7 ultimate base pressure
	*Automatic vacuum sequencing
	*Crystal thickness monitoring
	*Sample size: up to 3” x 3” pieces
	*Oxygen bleed for maintaining oxide stoichiometry

	<br>		<br>

Zwarburg: Created page with "{{tool|{{PAGENAME}} |picture=e-beam2.jpg |type = Dry Etch |super= Don Freeborn |phone= 805-893-3918x216 |location=Bay 3 |email=freeborn@ece.ucsb.edu |description = Custom, Loadlo…"

2012-06-28T00:57:16Z

Created page with "{{tool|{{PAGENAME}} |picture=e-beam2.jpg |type = Dry Etch |super= Don Freeborn |phone= 805-893-3918x216 |location=Bay 3 |email=freeborn@ece.ucsb.edu |description = Custom, Loadlo…"

New page

{{tool|{{PAGENAME}}
|picture=e-beam2.jpg
|type = Dry Etch
|super= Don Freeborn
|phone= 805-893-3918x216
|location=Bay 3
|email=freeborn@ece.ucsb.edu
|description = Custom, Loadlocked Chlorine-Based System
|manufacturer = UCSB
|materials =
}}

= About =

The Reactive Ion Etcher #1 is a turbo-pumped plasma deposition system from Sputtered Films that has been modified by the UCSB Nanofabrication Research Facility for chlorine-based reactive ion etching @ 13.56 Mhz. Special features include: a very small volume sample loadlock (for low O<sub>2</sub> partial pressure) with integral four inch sample holder and a HeNe laser etch monitor.

Typical materials that are etched with this system include: GaAs/AlGaAs, optical photoresists, and polymers such as polyimides. In addition, various optoelectronic devices such as in-plane lasers, vertical cavity surface emitting lasers (VCSELs), microlenses, FETs, Bragg Fresnel lenses are among the structures and devices that can be processed with this tool. This etcher is the preferred system for obtaining anisotropic etching (straight sidewalls) for the AlGaAs semiconductor system.

= Detailed Specifications =

*Temescal 10kV power supply
*Temescal 4-pocket series 260 e-beam source
*Electron beam controller with sweep rate and amplitude control
*Cryo-pumped system with ~ 1e-7 ultimate base pressure
*Automatic vacuum sequencing
*Crystal thickness monitoring
*Sample size: up to 3” x 3” pieces
*Oxygen bleed for maintaining oxide stoichiometry

<br>