RIE 2 (MRC) - Revision history

Sawyer l: Updated SOP

2023-07-21T14:55:06Z

Updated SOP

← Older revision		Revision as of 14:55, 21 July 2023
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	==Documentation==		==Documentation==

	*[https://wiki.~~nanotech~~.ucsb.edu/w/images/4/41/~~RIE_2_SOP_Rev_C~~.pdf RIE #2 Standard Operating Procedure]		*[https://wiki.nanofab.ucsb.edu/w/images/8/84/RIE_2_SOP_Rev_D.pdf RIE #2 Standard Operating Procedure]

Sawyer l: SOP rev

2023-03-10T15:36:03Z

SOP rev

← Older revision		Revision as of 15:36, 10 March 2023
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	==Documentation==		==Documentation==

	* [https://wiki.nanotech.ucsb.edu/w/images/8/82/~~RIE_2_SOP_Rev_B~~.pdf RIE #2 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/4/41/RIE_2_SOP_Rev_C.pdf RIE #2 Standard Operating Procedure]

Silva at 17:41, 30 August 2022

2022-08-30T17:41:14Z

← Older revision		Revision as of 17:41, 30 August 2022
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	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=RIE2.jpg		\|picture=RIE2.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Lee Sawyer		\|super= Lee Sawyer
			\|super2= Aidan Hopkins
	\|phone= 805-893-2123		\|phone= 805-893-2123
	\|location=Bay 2		\|location=Bay 2

Sawyer l: SOP rev

2020-09-13T17:46:40Z

SOP rev

← Older revision		Revision as of 17:46, 13 September 2020
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	==Documentation==		==Documentation==

	* [https://~~signupmonkey~~.~~ece~~.ucsb.edu/~~wiki~~/images/4/4f/~~RIE_2_SOP~~.pdf RIE #2 Standard Operating Procedure]		* [https://wiki.nanotech.ucsb.edu/w/images/8/82/RIE_2_SOP_Rev_B.pdf RIE #2 Standard Operating Procedure]

Sawyer l: cosmetic

2019-09-11T22:09:14Z

cosmetic

← Older revision		Revision as of 22:09, 11 September 2019
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	**~ 45 nm/min. etch rate		**~ 45 nm/min. etch rate

	==~~Procedures~~==		==Documentation==

	[https://signupmonkey.ece.ucsb.edu/wiki/images/4/4f/RIE_2_SOP.pdf RIE #2 Standard Operating Procedure]		* [https://signupmonkey.ece.ucsb.edu/wiki/images/4/4f/RIE_2_SOP.pdf RIE #2 Standard Operating Procedure]

Sawyer l at 22:03, 11 September 2019

2019-09-11T22:03:43Z

← Older revision		Revision as of 22:03, 11 September 2019
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	==Procedures==		==Procedures==
		⚫	[https://signupmonkey.ece.ucsb.edu/wiki/images/4/4f/RIE_2_SOP.pdf RIE #2 Standard Operating Procedure]

⚫	* [https://signupmonkey.ece.ucsb.edu/wiki/images/4/4f/RIE_2_SOP.pdf RIE #2 Standard Operating Procedure]

Sawyer l: added SOP link

2019-09-11T22:03:00Z

added SOP link

← Older revision		Revision as of 22:03, 11 September 2019
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	**~ 45 nm/min. etch rate		**~ 45 nm/min. etch rate

	== Procedures ==		==Procedures==

	RIE #2 Standard Operating Procedure
			* [https://signupmonkey.ece.ucsb.edu/wiki/images/4/4f/RIE_2_SOP.pdf RIE #2 Standard Operating Procedure]

Sawyer l: added SOP section

2019-09-11T22:01:34Z

added SOP section

← Older revision		Revision as of 22:01, 11 September 2019
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	\|toolid=25		\|toolid=25
	}}		}}
	= About =		==About==


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	RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O<sub>2</sub>). Alternatively, one can perform cyclic etching between MHA and O<sub>2</sub> to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber.		RIE of InP and related compounds can be achieved with a hydride-based process chemistry of methane/hydrogen with an etching mechanism due to a "reverse" metalorganic CVD reaction. Because both etching and deposition occur simultaneously, it is important to use the proper gas flows and to periodically remove any polymer reaction by-products deposited on the non-etched (mask) surfaces. (This system has an additional flow circuit in order to bleed in small amounts, <1 sccm, of O<sub>2</sub>). Alternatively, one can perform cyclic etching between MHA and O<sub>2</sub> to keep polymer formation to a minimum. With this technique selectivity is quite high and anisotropic etching can be achieved. While a metal, dielectric or photoresist may be used as a mask, photoresist should only be used at low bias voltages in order to avoid mask pattern distortions due to reflow. A precoat etch should be done before etching to condition the chamber.

	= Detailed Specifications =		==Detailed Specifications==

	*Etch gases include: CH<sub>4</sub>, H<sub>2</sub>, Ar and O<sub>2</sub>		*Etch gases include: CH<sub>4</sub>, H<sub>2</sub>, Ar and O<sub>2</sub>
	*Low 1 E -6 ultimate chamber pressure		*Low 1 E -6 ultimate chamber pressure
	*13.56 Mhz excitation frequency		*13.56 Mhz excitation frequency
	*Sample size limited to approximately 2 inches		*Sample size limited to approximately 2 inches
	*HeNe and IR laser monitoring for endpoint		*HeNe and IR laser monitoring for endpoint
	*Automatic tuning network		*Automatic tuning network
	*DC Bias or RF power control		*DC Bias or RF power control
	*Masking materials include: Ni, SiON, photoresist (limited to low bias/power)		*Masking materials include: Ni, SiON, photoresist (limited to low bias/power)
	*Typical etch conditions for InGaAsP:		*Typical etch conditions for InGaAsP:
	**75 mT (CH<sub>4</sub>/H<sub>2</sub>/Ar : 4/20/10 sccm)		**75 mT (CH<sub>4</sub>/H<sub>2</sub>/Ar : 4/20/10 sccm)
	**450v bias		**450v bias
	**~ 45 nm/min. etch rate		**~ 45 nm/min. etch rate

			== Procedures ==
			RIE #2 Standard Operating Procedure

Silva at 00:02, 26 February 2019

2019-02-26T00:02:56Z

← Older revision		Revision as of 00:02, 26 February 2019
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	\|location=Bay 2		\|location=Bay 2
	\|email=lee_sawyer@ucsb.edu		\|email=lee_sawyer@ucsb.edu
	\|description = RIE #2 ~~Fluorine~~-Based System ~~MRC 51~~		\|description = RIE #2 Methane/Hydrogen-Based System
	\|manufacturer = Materials Research Corporation (MRC)		\|manufacturer = Materials Research Corporation (MRC)
	\|materials =		\|materials =

Silva at 00:01, 26 February 2019

2019-02-26T00:01:27Z

← Older revision		Revision as of 00:01, 26 February 2019
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	\|type = Dry Etch		\|type = Dry Etch
	\|super= Lee Sawyer		\|super= Lee Sawyer
	\|phone= (805) 893-2123		\|phone= 805-893-2123
	\|location=Bay 2		\|location=Bay 2
	\|email=lee_sawyer@ucsb.edu		\|email=lee_sawyer@ucsb.edu
	\|description = RIE #2 ~~Methane/Hydrogen~~-Based System		\|description = RIE #2 Fluorine-Based System MRC 51
	\|manufacturer = Materials Research Corporation (MRC)		\|manufacturer = Materials Research Corporation (MRC)
	\|materials =		\|materials =
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	}}		}}
	= About =		= About =


	This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH<sub>4</sub>/H<sub>2</sub>/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides.		This is a Materials Research Corporation RIE-51 parallel plate, 13.56 Mhz system used primarily for the etching of InP with CH<sub>4</sub>/H<sub>2</sub>/Ar gases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II-VI compounds, high bias power is required. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed bias or power control and HeNe laser etch monitor with chart recorder. It is diffusion pumped and has no loadlock. Various etching applications have included: in-plane lasers/facets, InP-based HBTs, FET gate recessing, InP-based quantum microcavities, Bragg-Fresnel x-ray lenses and waveguides.