RIE 3 (MRC) - Revision history

John d: decomissioned notice

2025-08-08T17:02:23Z

decomissioned notice

← Older revision		Revision as of 17:02, 8 August 2025
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			'''<big>DECOMISSIONED - This tool have been moved to the Teaching Cleanroom for teaching purposes Only. This page is only for historical informational purposes only.</big>'''
	{{tool2\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=RIE3.jpg		\|picture=RIE3.jpg

John d: pasted recipes

2024-08-06T22:35:33Z

pasted recipes

← Older revision		Revision as of 22:35, 6 August 2024
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	*[https://wiki.nanotech.ucsb.edu/w/images/a/a6/RIE_3_SOP_Rev_D.pdf RIE #3 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/a/a6/RIE_3_SOP_Rev_D.pdf RIE #3 Standard Operating Procedure]

			= Recipes =
			==SiO<sub>2</sub> Etching (RIE 3)==
			*[//wiki.nanotech.ucsb.edu/w/images/2/2f/SiO2-Etch-Recipe-using-RIE-3-a.pdf SiO<sub>2</sub> Etch Recipe with a very low surface damage - CHF<sub>3]
			==SiN<sub>x</sub> Etching (RIE 3)==
			*[//wiki.nanotech.ucsb.edu/w/images/9/98/51-SiNx-Etch-Recipe-using-RIE3.pdf SiN<sub>x</sub> Etch Recipe with a very low surface damage - CHF<sub>3]

Silva at 17:42, 30 August 2022

2022-08-30T17:42:30Z

← Older revision		Revision as of 17:42, 30 August 2022
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	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=RIE3.jpg		\|picture=RIE3.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Lee Sawyer		\|super= Lee Sawyer
			\|super2= Aidan Hopkins
	\|phone= 805-893-2123		\|phone= 805-893-2123
	\|location=Bay 2		\|location=Bay 2

Sawyer l: Updated SOP

2021-03-15T18:28:50Z

Updated SOP

← Older revision		Revision as of 18:28, 15 March 2021
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	==Documentation==		==Documentation==

	*[https://wiki.nanotech.ucsb.edu/w/images/4/42/~~RIE_3_SOP_Rev_C~~.pdf RIE #3 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/a/a6/RIE_3_SOP_Rev_D.pdf RIE #3 Standard Operating Procedure]

Sawyer l: updated SOP link

2020-08-01T16:55:48Z

updated SOP link

← Older revision		Revision as of 16:55, 1 August 2020
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	==Documentation==		==Documentation==

	*[https://wiki.nanotech.ucsb.edu/w/images/2/2a/~~RIE_3_SOP_Rev_B~~.pdf RIE #3 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/4/42/RIE_3_SOP_Rev_C.pdf RIE #3 Standard Operating Procedure]

Sawyer l: updated SOP link

2020-03-06T00:34:32Z

updated SOP link

← Older revision		Revision as of 00:34, 6 March 2020
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	==Documentation==		==Documentation==

	*[https://~~signupmonkey~~.~~ece~~.ucsb.edu/~~wiki~~/images/5/51/~~RIE_3_SOP~~.pdf RIE #3 Standard Operating Procedure]		*[https://wiki.nanotech.ucsb.edu/w/images/2/2a/RIE_3_SOP_Rev_B.pdf RIE #3 Standard Operating Procedure]

Sawyer l: cosmetic

2019-09-11T22:09:44Z

cosmetic

← Older revision		Revision as of 22:09, 11 September 2019
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	\|toolid=26		\|toolid=26
	}}		}}
	=About=		==About==

	This is a Materials Research Corporation RIE-51 parallel plate, 13.56 MHz system used for etching with fluorine-containing gases (CF<sub>4</sub>, SF<sub>6</sub>, and CHF<sub>3</sub>). The system is used primarily for etching of Si, SiO<sub>2</sub>, and Si<sub>3</sub>N<sub>4</sub> films. Metals such as tungsten may also be etched. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed DC bias or RF power control and a HeNe laser etch monitor with chart recorder. It is turbo pumped and has no loadlock.		This is a Materials Research Corporation RIE-51 parallel plate, 13.56 MHz system used for etching with fluorine-containing gases (CF<sub>4</sub>, SF<sub>6</sub>, and CHF<sub>3</sub>). The system is used primarily for etching of Si, SiO<sub>2</sub>, and Si<sub>3</sub>N<sub>4</sub> films. Metals such as tungsten may also be etched. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed DC bias or RF power control and a HeNe laser etch monitor with chart recorder. It is turbo pumped and has no loadlock.
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	The etches have good selectivity to many metals and semiconductors such as Ni, Al, Cr, Ti, GaAs, InP, and GaN. The system generally produces anisotropic etch profiles unless one goes into a purely chemical fluorine etch mode with higher pressure SF<sub>6</sub> processes. The system also has a strong loading effect so that larger substrates and open areas will require more feed gas and higher pressure to compensate. As a result, individual processes need to be characterized.		The etches have good selectivity to many metals and semiconductors such as Ni, Al, Cr, Ti, GaAs, InP, and GaN. The system generally produces anisotropic etch profiles unless one goes into a purely chemical fluorine etch mode with higher pressure SF<sub>6</sub> processes. The system also has a strong loading effect so that larger substrates and open areas will require more feed gas and higher pressure to compensate. As a result, individual processes need to be characterized.

	=Detailed Specifications=		==Detailed Specifications==

	*Etch gases include: CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, O<sub>2</sub>		*Etch gases include: CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, O<sub>2</sub>
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	*Masking materials include: Ni, photoresist (limited to low bias/power), Cr, Al		*Masking materials include: Ni, photoresist (limited to low bias/power), Cr, Al

	=Documentation=		==Documentation==

	*[https://signupmonkey.ece.ucsb.edu/wiki/images/5/51/RIE_3_SOP.pdf RIE #3 Standard Operating Procedure]		*[https://signupmonkey.ece.ucsb.edu/wiki/images/5/51/RIE_3_SOP.pdf RIE #3 Standard Operating Procedure]

Sawyer l: added SOP link

2019-09-11T22:08:32Z

added SOP link

← Older revision		Revision as of 22:08, 11 September 2019
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	=Documentation=		=Documentation=

	*RIE #3 Standard Operating Procedure		*[https://signupmonkey.ece.ucsb.edu/wiki/images/5/51/RIE_3_SOP.pdf RIE #3 Standard Operating Procedure]

Sawyer l at 22:08, 11 September 2019

2019-09-11T22:08:05Z

← Older revision		Revision as of 22:08, 11 September 2019
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	=Documentation=		=Documentation=

	*~~[https://signupmonkey.ece.ucsb.edu/wiki/images/5/51/RIE_3_SOP.pdf~~ RIE #3 Standard Operating Procedure]		*RIE #3 Standard Operating Procedure

Sawyer l: added SOP link

2019-09-11T22:06:57Z

added SOP link

← Older revision		Revision as of 22:06, 11 September 2019
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	\|toolid=26		\|toolid=26
	}}		}}
	= About =		=About=

	This is a Materials Research Corporation RIE-51 parallel plate, 13.56 MHz system used for etching with fluorine-containing gases (CF<sub>4</sub>, SF<sub>6</sub>, and CHF<sub>3</sub>). The system is used primarily for etching of Si, SiO<sub>2</sub>, and Si<sub>3</sub>N<sub>4</sub> films. Metals such as tungsten may also be etched. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed DC bias or RF power control and a HeNe laser etch monitor with chart recorder. It is turbo pumped and has no loadlock.		This is a Materials Research Corporation RIE-51 parallel plate, 13.56 MHz system used for etching with fluorine-containing gases (CF<sub>4</sub>, SF<sub>6</sub>, and CHF<sub>3</sub>). The system is used primarily for etching of Si, SiO<sub>2</sub>, and Si<sub>3</sub>N<sub>4</sub> films. Metals such as tungsten may also be etched. Tool features include: six inch diameter water cooled cathode/substrate platform, pyrex cylinder for plasma confinement and gas flow control, adjustable cathode-anode spacing, fixed DC bias or RF power control and a HeNe laser etch monitor with chart recorder. It is turbo pumped and has no loadlock.
Line 19:		Line 19:
	The etches have good selectivity to many metals and semiconductors such as Ni, Al, Cr, Ti, GaAs, InP, and GaN. The system generally produces anisotropic etch profiles unless one goes into a purely chemical fluorine etch mode with higher pressure SF<sub>6</sub> processes. The system also has a strong loading effect so that larger substrates and open areas will require more feed gas and higher pressure to compensate. As a result, individual processes need to be characterized.		The etches have good selectivity to many metals and semiconductors such as Ni, Al, Cr, Ti, GaAs, InP, and GaN. The system generally produces anisotropic etch profiles unless one goes into a purely chemical fluorine etch mode with higher pressure SF<sub>6</sub> processes. The system also has a strong loading effect so that larger substrates and open areas will require more feed gas and higher pressure to compensate. As a result, individual processes need to be characterized.

	= Detailed Specifications =		=Detailed Specifications=

	*Etch gases include: CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, O<sub>2</sub>		*Etch gases include: CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, O<sub>2</sub>
	*Low 1 E -6 ultimate chamber pressure		*Low 1 E -6 ultimate chamber pressure
	*13.56 Mhz excitation frequency		*13.56 Mhz excitation frequency
	*Manual gas control		*Manual gas control
	*Automatic pressure control		*Automatic pressure control
	*Manual RF tuning network		*Manual RF tuning network
	*Timer circuit for stopping the plasma		*Timer circuit for stopping the plasma
	*Sample size limited to approximately 4 inches		*Sample size limited to approximately 4 inches
	*Masking materials include: Ni, photoresist (limited to low bias/power), Cr, Al		*Masking materials include: Ni, photoresist (limited to low bias/power), Cr, Al

	=Documentation=		=Documentation=

			*[https://signupmonkey.ece.ucsb.edu/wiki/images/5/51/RIE_3_SOP.pdf RIE #3 Standard Operating Procedure]
	*[[media:RIE 3 Operationing instructions.pdf\|Operating Instructions]]