RIE 5 (PlasmaTherm) - Revision history

John d at 06:15, 13 January 2026

2026-01-13T06:15:47Z

← Older revision		Revision as of 06:15, 13 January 2026
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	==Detailed Specifications==		==Detailed Specifications==

	*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar		*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar, H<sub>2</sub>
	*Full computer control or manual computer control		*Full computer control or manual computer control
	*Low 1 E-7 ultimate chamber pressure		*Low 1 E-7 ultimate chamber pressure

John d: /* Detailed Specifications */ added laser monitor

2022-11-28T17:54:37Z

Detailed Specifications: added laser monitor

← Older revision		Revision as of 17:54, 28 November 2022
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	\|toolid=27		\|toolid=27
	}}		}}
	== About ==		==About==
	This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.		This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.

	Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.		Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

	== Detailed Specifications ==		==Detailed Specifications==

	*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar		*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar
	*Full computer control or manual computer control		*Full computer control or manual computer control
	*Low 1 E-7 ultimate chamber pressure		*Low 1 E-7 ultimate chamber pressure
	*13.56 Mhz excitation frequency		*13.56 Mhz excitation frequency
	*Sample chuck He-backside cooled / heated (up to 80°C)		*Sample chuck He-backside cooled / heated (up to 80°C)
			*Laser Etch monitor: large spot size, no camera/alignment method.
⚫	*Typical etch conditions for GaAs:
			**Requires full ~1cm witness sample/area in center of wafer.
⚫	**10 mT (15 sccm BCl<sub>3</sub> / 10 sccm SiCl<sub>4</sub>)
⚫	**100 W, constant power
⚫	**60 nm / min. etch rate

	==Documentation==		==Documentation==

	*[[RIE5 - Standard Operating procedure (Cortex Software)\|RIE#5: Standard Operating Procedure (Cortex Software)]]		*[[RIE5 - Standard Operating procedure (Cortex Software)\|RIE#5: Standard Operating Procedure (Cortex Software)]]
	*{{file\|How to restart the software on RIE.pdf\|How to restart the software on RIE #5}}		*{{file\|How to restart the software on RIE.pdf\|How to restart the software on RIE #5}}

	== Recipes ==		==Recipes==
	You can find dry etch recipes on '''Recipes > Dry Etch > [[RIE Etching Recipes#RIE 5 .28PlasmaTherm.29\|<u>RIE5 Recipes</u>]]'''		You can find dry etch recipes on '''Recipes > Dry Etch > [[RIE Etching Recipes#RIE 5 .28PlasmaTherm.29\|<u>RIE5 Recipes</u>]]'''

		⚫	Typical etch conditions for GaAs:

		⚫	*10 mT (15 sccm BCl<sub>3</sub> / 10 sccm SiCl<sub>4</sub>)
		⚫	*100 W, constant power
		⚫	*60 nm / min. etch rate

Silva at 17:44, 30 August 2022

2022-08-30T17:44:09Z

← Older revision		Revision as of 17:44, 30 August 2022
Line 1:		Line 1:
	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=RIE5.jpg		\|picture=RIE5.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= ~~Bill~~ ~~Millerski~~		\|super= Aidan Hopkins
			\|super2= Bill Millerski
	\|location=Bay 2		\|location=Bay 2
	\|description = RIE #5 Programmable, Loadlocked Chlorine-Based System		\|description = RIE #5 Programmable, Loadlocked Chlorine-Based System

Silva at 15:29, 28 October 2021

2021-10-28T15:29:25Z

← Older revision		Revision as of 15:29, 28 October 2021
Line 2:		Line 2:
	\|picture=RIE5.jpg		\|picture=RIE5.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= ~~Brian~~ ~~Lingg~~		\|super= Bill Millerski
	\|location=Bay 2		\|location=Bay 2
	\|description = RIE #5 Programmable, Loadlocked Chlorine-Based System		\|description = RIE #5 Programmable, Loadlocked Chlorine-Based System

John d: link to recipes

2020-11-10T19:28:00Z

link to recipes

← Older revision		Revision as of 19:28, 10 November 2020
Line 10:		Line 10:
	\|toolid=27		\|toolid=27
	}}		}}
	= About =		== About ==
	This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.		This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.

	Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.		Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

	= Detailed Specifications =		== Detailed Specifications ==

	*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar		*Etch gases include: Cl<sub>2</sub>, BCl<sub>3</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, Ar
Line 27:		Line 27:
	**60 nm / min. etch rate		**60 nm / min. etch rate

	=Documentation=		==Documentation==
	*[[RIE5 - Standard Operating procedure (Cortex Software)\|RIE#5: Standard Operating Procedure (Cortex Software)]]		*[[RIE5 - Standard Operating procedure (Cortex Software)\|RIE#5: Standard Operating Procedure (Cortex Software)]]
	*{{file\|How to restart the software on RIE.pdf\|How to restart the software on RIE #5}}		*{{file\|How to restart the software on RIE.pdf\|How to restart the software on RIE #5}}

			== Recipes ==
			You can find dry etch recipes on '''Recipes > Dry Etch > [[RIE Etching Recipes#RIE 5 .28PlasmaTherm.29\|<u>RIE5 Recipes</u>]]'''

John d: added model to Tool panel

2020-02-11T02:40:23Z

added model to Tool panel

← Older revision		Revision as of 02:40, 11 February 2020
Line 3:		Line 3:
	\|type = Dry Etch		\|type = Dry Etch
	\|super= Brian Lingg		\|super= Brian Lingg
	\|phone= 805-893-3918x 210
	\|location=Bay 2		\|location=Bay 2
	\|email=lingg@ucsb.ece.ucsb.edu
	\|description = RIE #5 Programmable, Loadlocked Chlorine-Based System		\|description = RIE #5 Programmable, Loadlocked Chlorine-Based System
	\|manufacturer = Plasmatherm (Unaxis)		\|manufacturer = Plasmatherm (Unaxis)
			\|model = SLT 770
	\|materials =		\|materials =
	\|toolid=27		\|toolid=27

Silva at 21:43, 1 April 2019

2019-04-01T21:43:57Z

← Older revision		Revision as of 21:43, 1 April 2019
Line 2:		Line 2:
	\|picture=RIE5.jpg		\|picture=RIE5.jpg
	\|type = Dry Etch		\|type = Dry Etch
	\|super= ~~Don~~ ~~Freeborn~~		\|super= Brian Lingg
	\|phone= 805-893-~~3918x216~~		\|phone= 805-893-3918x 210
	\|location=Bay 2		\|location=Bay 2
	\|email=~~freeborn~~@ece.ucsb.edu		\|email=lingg@ucsb.ece.ucsb.edu
	\|description = RIE #5 Programmable, Loadlocked Chlorine-Based System		\|description = RIE #5 Programmable, Loadlocked Chlorine-Based System
	\|manufacturer = Plasmatherm (Unaxis)		\|manufacturer = Plasmatherm (Unaxis)

John d: /* Documentation */ link to new SOP

2018-10-17T20:58:21Z

Documentation: link to new SOP

← Older revision		Revision as of 20:58, 17 October 2018
Line 29:		Line 29:

	=Documentation=		=Documentation=
			*[[RIE5 - Standard Operating procedure (Cortex Software)\|RIE#5: Standard Operating Procedure (Cortex Software)]]
	*{{file\|How to restart the software on RIE.pdf\|How to restart the software on RIE #5}}		*{{file\|How to restart the software on RIE.pdf\|How to restart the software on RIE #5}}
	*{{file\|RIE_-5_operating_instructions.pdf\|RIE#5 Operating Instructions}}

Thibeault: /* About */

2018-04-19T20:14:28Z

About

← Older revision		Revision as of 20:14, 19 April 2018
Line 12:		Line 12:
	}}		}}
	= About =		= About =
	This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and ~~thin Pt~~ layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.		This computer-controlled, turbo-pumped RIE is the "work horse" of the processing laboratory due to it's ease of operation and versatility. It can be operated manually or in a fully programmable mode from sample loading to etching to sample unloading. Samples are placed on a silicon carrier with or without a bonding agent to facilitate sample cooling. Etching is done with oxygen or chlorine-based gases @ 13.56 Mhz. Oxygen is used for etching of photoresists and polyimide. Chlorine-based gases are used for etching semiconductors and some metals. Typical semiconductor materials that are etched are: AlGaAs, InGaAs, AlGaSb, GaN, and Si. Metals that can be etched include Al, Ti, and Cr layers. Good masking materials for the chlorine-based etching are photoresist (at powers < 200 W), Ni, SiO<sub>2</sub>, and SrF<sub>2</sub>. The wafer chuck can be heated to 80°C through liquid-based heating. This makes etching of high In-containing compounds difficult due to the non-volatility of In-chlorides. A high physical component (Ar in the mixture) is required for etching of InP and the surface will be contaminated with residual etch products when finished.

	Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.		Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

Jcrode: Reverted edits by Jcrode (talk) to last revision by Dfreeborn

2017-09-11T04:25:51Z

Reverted edits by Jcrode (talk) to last revision by Dfreeborn

← Older revision		Revision as of 04:25, 11 September 2017
Line 15:		Line 15:

	Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.		Special features include: a true sample loadlock, substrate backside helium cooling, heating up to 80°C, four inch sample holder, HeNe laser etch monitor and chart recorder. Various devices that use this tool as an integral processing step include: in-plane lasers, VCSELs, micro-lenses, Bragg-Fresnel lens, FETs, HBTs, etc.

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	= Detailed Specifications =		= Detailed Specifications =