Rapid Thermal Processor (AET RX6) - Revision history

John d: /* Detailed Specifications */

2025-03-14T19:33:19Z

Detailed Specifications

← Older revision		Revision as of 19:33, 14 March 2025
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	=Detailed Specifications=		=Detailed Specifications=

⚫	*Max temp vs time:
⚫	**1000°C for 20 min
⚫	**1100°C for 5 min
⚫	**1200°C for 3 min
	*Maximum ramp rate of 50°C/Sec.		*Maximum ramp rate of 50°C/Sec.
	*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.		*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
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	*Windows-based process monitoring and control software by Sedona Visual Controls		*Windows-based process monitoring and control software by Sedona Visual Controls

		⚫	'''Max temp vs time:'''
		⚫	*1000°C for 20 min
		⚫	*1100°C for 5 min
		⚫	*1200°C for 3 min
	=Documentation=		=Documentation=

John d: /* Detailed Specifications */

2025-03-14T19:32:26Z

Detailed Specifications

← Older revision		Revision as of 19:32, 14 March 2025
Line 17:		Line 17:
	=Detailed Specifications=		=Detailed Specifications=

			*Max temp vs time:
	*Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
			**1000°C for 20 min
			**1100°C for 5 min
			**1200°C for 3 min
	*Maximum ramp rate of 50°C/Sec.		*Maximum ramp rate of 50°C/Sec.
	*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.		*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.

Millerski w: Updated SOP

2023-06-15T15:58:05Z

Updated SOP

← Older revision		Revision as of 15:58, 15 June 2023
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	=Documentation=		=Documentation=

	*[//wiki.nanotech.ucsb.edu/~~wiki~~/images/b/bb/~~AET_RTA_Operating_Instructions~~.pdf Operating Instuctions]		*[https://wiki.nanotech.ucsb.edu/w/images/0/0b/RTA_AET_Operating_Instructions.pdf Operating Instuctions]

Silva: /* Max temp/Time */

2023-04-06T14:40:12Z

Max temp/Time

@@ Line 22: / Line 22: @@
 *TC use for anneals up to 1200°C
 *Windows-based process monitoring and control software by Sedona Visual Controls
 =Documentation=

Silva at 18:10, 30 August 2022

2022-08-30T18:10:43Z

← Older revision		Revision as of 18:10, 30 August 2022
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	{{~~tool~~\|{{PAGENAME}}		{{tool2\|{{PAGENAME}}
	\|picture=RTP.jpg		\|picture=RTP.jpg
	\|type = Vacuum Deposition		\|type = Vacuum Deposition
	\|super= Bill Millerski		\|super= Bill Millerski
			\|super2= Tony Bosch
	\|phone=(805)839-3918x210		\|phone=(805)839-3918x210
	\|location=Bay 3		\|location=Bay 3

Silva at 15:30, 28 October 2021

2021-10-28T15:30:15Z

← Older revision		Revision as of 15:30, 28 October 2021
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	\|picture=RTP.jpg		\|picture=RTP.jpg
	\|type = Vacuum Deposition		\|type = Vacuum Deposition
	\|super= ~~Brian~~ ~~Lingg~~		\|super= Bill Millerski
	\|phone=(805)839-3918x210		\|phone=(805)839-3918x210
	\|location=Bay 3		\|location=Bay 3

Jcrode: Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/"

2020-04-07T01:35:26Z

Text replacement - "www.nanotech.ucsb.edu/wiki/" to "wiki.nanotech.ucsb.edu/wiki/"

← Older revision		Revision as of 01:35, 7 April 2020
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	=Documentation=		=Documentation=

	*[//~~www~~.nanotech.ucsb.edu/wiki/images/b/bb/AET_RTA_Operating_Instructions.pdf Operating Instuctions]		*[//wiki.nanotech.ucsb.edu/wiki/images/b/bb/AET_RTA_Operating_Instructions.pdf Operating Instuctions]

John d: /* Detailed Specifications */ "Temp" --> "maximum temp"

2019-10-25T21:48:04Z

Detailed Specifications: "Temp" --> "maximum temp"

← Older revision		Revision as of 21:48, 25 October 2019
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	\|toolid=42		\|toolid=42
	}}		}}
	= About =		=About=
	Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.		Our rapid thermal annealer is manufactured by AET. Heating is achieved through two banks of heat lamps that deliver optical energy through the all-quartz chamber. With this unit, atmospheric pressure anneals in Oxygen, Nitrogen and Forming Gas can be done to temperatures up to 1200°C for three minutes. An inner liner is used to prevent contamination to the main quartz chamber. A thermocouple and pyrometer are available for maintaining temperature control. The system can hold one 4-inch wafer or smaller substrates placed on top of a Silicon carrier wafer. Custom windows based control software has been added to the system by Sedona Visual Controls. All process parameters are monitored and stored. Typical anneals are done for: ohmic contact formation to semiconductors, implant activation, damage annealing, dopant activation, and film densification. A variety of materials can be annealed in the chamber, including Si, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, GaAs, InP, GaSb, GaN, and metals. For materials that will decompose at the elevated temperatures, a dielectric anneal cap must be deposited on the wafer or an enclosed wafer holder must be used to prevent contamination of the chamber walls.

	= Detailed Specifications =		=Detailed Specifications=

	*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.		*Max. Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
	*Maximum ramp rate of ~~50C~~/Sec.		*Maximum ramp rate of 50°C/Sec.
	*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.		*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
	*TC use for anneals up to 1200°C		*TC use for anneals up to 1200°C
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	=Max temp/Time=		=Max temp/Time=

	{\| ~~border~~="1" ~~class~~="~~wikitable~~" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"		{\| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;"
	\|-		\|-
	\|width="100"\|Temperature\|\|width="75"\|Time		\| width="100" \|Temperature\|\| width="75" \|Time
	\|-		\|-
	\|1000°C \|\| 1 Hour		\|1000°C\|\|1 Hour
	\|-		\|-
	\|1100°C\|\|10 min		\|1100°C\|\|10 min
	\|-		\|-
	\|1200°C \|\|3 min		\|1200°C\|\|3 min
	\|-		\|-
	\|1300°C\|\| 10 sec		\|1300°C\|\|10 sec
	\|-		\|-
	\|}		\|}

	=Documentation=		=Documentation=

	*[[media:AET RTA Operating Instructions.pdf\|Operating Instuctions]]
			*[//www.nanotech.ucsb.edu/wiki/images/b/bb/AET_RTA_Operating_Instructions.pdf Operating Instuctions]

Lingg: /* Detailed Specifications */

2017-03-20T16:54:34Z

Detailed Specifications

← Older revision		Revision as of 16:54, 20 March 2017
Line 17:		Line 17:

	*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.		*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
			*Maximum ramp rate of 50C/Sec.
	*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.		*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
	*TC use for anneals up to 1200°C		*TC use for anneals up to 1200°C

Lingg: /* Detailed Specifications */

2017-03-17T00:01:47Z

Detailed Specifications

← Older revision		Revision as of 00:01, 17 March 2017
Line 16:		Line 16:
	= Detailed Specifications =		= Detailed Specifications =

	*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 1 min. ~~Oxygen, Nitrogen and Forming Gas flows up to 10LPM. TC use for anneals up to 1200°C~~		*Temperatures of 1000°C for 20 min., 1100°C for 5 min., 1200°C for 3 min.
			*Oxygen, Nitrogen and Forming Gas flows up to 10LPM.
			*TC use for anneals up to 1200°C
	*Windows-based process monitoring and control software by Sedona Visual Controls		*Windows-based process monitoring and control software by Sedona Visual Controls