Rapid Thermal Processor (SSI Solaris 150) - Revision history

Millerski w: Updated SOP

2025-07-28T15:48:13Z

Updated SOP

← Older revision		Revision as of 15:48, 28 July 2025
Line 31:		Line 31:
	==Operating Instructions==		==Operating Instructions==

	*[https://wiki.nanofab.ucsb.edu/w/images/7/7a/~~RTA_SSI_Operating_Instructions~~.pdf Solaris 150 Operating Procedure]		*[https://wiki.nanofab.ucsb.edu/w/images/6/64/RTA_SSI_SOP.pdf Solaris 150 Operating Procedure]
	*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]		*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

John d: added table of max temp vs time

2025-03-14T19:30:57Z

added table of max temp vs time

@@ Line 28: / Line 28: @@
 *Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.
 *Gasses available:  Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).
 ==Operating Instructions==
@@ Line 35: / Line 33: @@
 *[https://wiki.nanofab.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure]
 *[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

Millerski w: Changed the max temperature from 1250 to 1200 in the "About" section.

2023-12-08T15:36:41Z

Changed the max temperature from 1250 to 1200 in the "About" section.

← Older revision		Revision as of 15:36, 8 December 2023
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	==About==		==About==
	The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- ~~1250~~ degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.		The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1200 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

	The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.		The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

Millerski w: Temperature maximum in the details section from 1250 to 1200

2023-12-08T15:34:55Z

Temperature maximum in the details section from 1250 to 1200

← Older revision		Revision as of 15:34, 8 December 2023
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	*Recommended steady state duration: 0-600 seconds per step.		*Recommended steady state duration: 0-600 seconds per step.
	*Ramp down rate: Temperature Dependent, max 150°C per second.		*Ramp down rate: Temperature Dependent, max 150°C per second.
	*~~Recommended steady~~ state temperature range: 300C - ~~1250~~°C		*Steady state temperature range: 300C - 1200°C
	*Thermocouple temperature accuracy: + 2.5C		*Thermocouple temperature accuracy: + 2.5C
	*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.		*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.

Millerski w: Updated SOP

2023-10-30T21:46:03Z

Updated SOP

← Older revision		Revision as of 21:46, 30 October 2023
Line 33:		Line 33:
	==Operating Instructions==		==Operating Instructions==

	*[https://wiki.~~nanotech~~.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure]		*[https://wiki.nanofab.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure]
	*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]		*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]

John d: Added “RTA” and abbreviations for searchability

2023-06-21T22:45:07Z

Added “RTA” and abbreviations for searchability

← Older revision		Revision as of 22:45, 21 June 2023
Line 12:		Line 12:

	==About==		==About==
	The Solaris 150 is a manual loading ~~RTP~~ system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.		The Solaris 150 is a manual loading “Rapid Therm Process” (RPT) or “Rapid Thermal Anneal” (RTA) system for R&D and pre-production. The Solaris 150 can process up to 152.4mm substrates at a temperature range from RT- 1250 degrees. The unique temperature measurement system of the Solaris requires virtually no calibration for different wafer types and backside emmissivity differences.

	The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.		The Solaris uses a unique PID process controller that ensures accurate temperature stability and uniformity. The system can accommodate four interlocked MFCs for gas mixing and forming gas processing. The Solaris is designed for silicon implant annealing and monitoring and compound semiconductor implant activation and ohmic alloying.

Millerski w: Updated SOP

2023-05-22T17:01:31Z

Updated SOP

John d: /* Detailed Specificiations */ bullets

2022-12-06T20:47:44Z

Detailed Specificiations: bullets

@@ Line 17: / Line 17: @@
 ==Detailed Specificiations==
-Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.
+* Wafer handling: Manual loading of wafer into the oven, single wafer processing.
-Ramp up rate: 10-200C per second, user-controllable.
+* Ramp up rate: 10-200°C per second, user-controllable.
 <br />

Millerski w: Added process gasses to the "Detailed Specifications"

2022-03-11T21:42:49Z

Added process gasses to the "Detailed Specifications"

← Older revision		Revision as of 21:42, 11 March 2022
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	Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.		Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.

			The tool uses the following gasses: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).

			<br />

	==Operating Instructions==		==Operating Instructions==

Silva at 15:31, 28 October 2021

2021-10-28T15:31:17Z

← Older revision		Revision as of 15:31, 28 October 2021
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	{{tool		{{tool
	\|super = ~~Brian~~ ~~Lingg~~		\|super = Bill Millerski
	\|picture=RTP-Solaris-150.jpg		\|picture=RTP-Solaris-150.jpg
	\|type = Thermal Processing		\|type = Thermal Processing

← Older revision		Revision as of 17:01, 22 May 2023
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	==Detailed Specificiations==		==Detailed Specificiations==

	* Wafer handling: Manual loading of wafer into the oven, single wafer processing.		*Wafer handling: Manual loading of wafer into the oven, single wafer processing.
	* Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.		*Wafer sizes: 2", 3", 4", 5" and 6" wafers and pieces.
	* Ramp up rate: 10-200°C per second, user-controllable.		*Ramp up rate: 10-200°C per second, user-controllable.
	* Recommended steady state duration: 0-600 seconds per step.		*Recommended steady state duration: 0-600 seconds per step.
	* Ramp down rate: Temperature Dependent, max 150°C per second.		*Ramp down rate: Temperature Dependent, max 150°C per second.
	* Recommended steady state temperature range: 300C - 1250°C		*Recommended steady state temperature range: 300C - 1250°C
	* Thermocouple temperature accuracy: + 2.5C		*Thermocouple temperature accuracy: + 2.5C
	* Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.		*Temperature repeatability: + 3C or better at 1150C wafer-to-wafer.
	* Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.		*Temperature uniformity: + 5C across a 6" (150 mm) wafer at 1150C.
	* Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).		*Gasses available: Nitrogen, Oxygen, Argon, Forming gas (90% Nitrogen / 10% Hydrogen).

	<br />		<br />
Line 33:		Line 33:
	==Operating Instructions==		==Operating Instructions==

	*[~~[SSI~~ ~~Solaris 150 - Operating Procedure\|~~Solaris 150 Operating Procedure]]		*[https://wiki.nanotech.ucsb.edu/w/images/7/7a/RTA_SSI_Operating_Instructions.pdf Solaris 150 Operating Procedure]
	*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]		*[https://wiki.nanotech.ucsb.edu/wiki/images/6/66/Solaris_150_install_manual_software3_0_revQ.pdf User manual]