Zwarburg at 20:43, 10 July 2012

2012-07-10T20:43:05Z

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	=About=		=About=

Zwarburg at 15:02, 10 July 2012

2012-07-10T15:02:51Z

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Zwarburg: Created page with "{{tool|{{PAGENAME}} |picture=Sputter1.jpg |type = Vacuum Deposition |super= Adam Abrahamsen |phone=(805)839-3918x213 |location=Bay 3 |email=abrahamsen@ece.ucsb.edu |description …"

2012-07-10T15:02:34Z

Created page with "{{tool|{{PAGENAME}} |picture=Sputter1.jpg |type = Vacuum Deposition |super= Adam Abrahamsen |phone=(805)839-3918x213 |location=Bay 3 |email=abrahamsen@ece.ucsb.edu |description …"

New page

{{tool|{{PAGENAME}}
|picture=Sputter1.jpg
|type = Vacuum Deposition
|super= Adam Abrahamsen
|phone=(805)839-3918x213
|location=Bay 3
|email=abrahamsen@ece.ucsb.edu
|description =Three-Target DC/RF Sputtering System
|manufacturer =
|materials =
}}
=About=
The Three-Target DC/RF Sputtering System, built by Sputtered Films, Inc. is based on the "Research S-Gun" and as such, is capable of high sputtering rates (~ A/min.) for metal, semiconductor and dielectric materials with a minimal substrate bombardment caused by secondary electrons. The deposition chamber is non-loadlocked providing for easy sample loading and target/gun changing. Venting and evacuation are automated with a 500 l/s turbo (capable of pumping O2) achieving an ~ 2 E-7 T ultimate pressure (~ 1E-7 with liquid nitrogen flange pocket) in about 6-8 hours. Substrates are clip mounted onto one of several 6 inch diameter platens which mount into a rotating 4-position planetary "flat-wheel". This flat-wheel is concentric with a rotating 3-blade shutter assembly. Each are then manually positioned over one of three sputtering guns, operating one at a time. Available gases for injection include Ar/N2/O2, the latter allowing for nitride and oxide formation. Flow rates of <100 sccm are controlled with standard mass flow controllers. Gun power supplies include: 2.4 kW DC magnetron driver, 13.56 Mhz RF supply for sample sputter cleaning, and a SparcLE Pulsed DC Unit for reactive sputter deposition. Operation is usually in a constant power mode (200-500 watts) with the resulting optimum V, I (and chamber pressure) dependent on the target material. Present available targets include: Al, Al(0.5% Cu or 4% Cu), Ag, Au, Cr, ITO, Nb, Si, Ti, W, W-Si and Zr-Y.

=Detailed Specifications=
*3 target with DC or Pulsed-DC operation
*Low E-7 T ultimate pressure (10 mT typical operating pressure)
*6" diameter sample holder platen with 4" sample-gun spacing
*Deposition uniformity is ~ 85% over 2 " diameter for SiO2 deposition at 300W

Sputter 1 (Custom) - Revision history

Zwarburg at 20:43, 10 July 2012

Zwarburg at 15:02, 10 July 2012

Zwarburg: Created page with "{{tool|{{PAGENAME}} |picture=Sputter1.jpg |type = Vacuum Deposition |super= Adam Abrahamsen |phone=(805)839-3918x213 |location=Bay 3 |email=abrahamsen@ece.ucsb.edu |description …"