Sputter 2 (SFI Endeavor) - Revision history

John d: disclaimer that tool is disabled

2018-09-05T17:28:17Z

disclaimer that tool is disabled

← Older revision		Revision as of 17:28, 5 September 2018
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			'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''

	{{tool\|{{PAGENAME}}		{{tool\|{{PAGENAME}}
	\|picture=Sputter2.jpg		\|picture=Sputter2.jpg

Biljana at 18:56, 31 March 2014

2014-03-31T18:56:43Z

← Older revision		Revision as of 18:56, 31 March 2014
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	*Chamber 3: DC sputtering of Al or Au. RF back-sputtering with Argon		*Chamber 3: DC sputtering of Al or Au. RF back-sputtering with Argon
	**Al Dep rate ~ 300-400 nm/min.		**Al Dep rate ~ 300-400 nm/min.


			=Documentation=
			*[[media:SFI Sputter.pdf\|Operating Instructions]]

Zwarburg at 20:44, 10 July 2012

2012-07-10T20:44:06Z

← Older revision		Revision as of 20:44, 10 July 2012
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	\|manufacturer = Endeavor		\|manufacturer = Endeavor
	\|materials =		\|materials =
	\|toolid=20		\|toolid=19
	}}		}}
	= About =		= About =

Zwarburg at 20:43, 10 July 2012

2012-07-10T20:43:17Z

← Older revision		Revision as of 20:43, 10 July 2012
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	\|description = 3 chamber Cluster Sputter		\|description = 3 chamber Cluster Sputter
	\|manufacturer = Endeavor		\|manufacturer = Endeavor
	\|materials =		\|materials =
			\|toolid=20
	}}		}}
	= About =		= About =

Zwarburg: Created page with "{{tool|{{PAGENAME}} |picture=Sputter2.jpg |type = Vacuum Deposition |super= Brian Lingg |phone=(805)839-3918x210 |location=Bay 1 |email=lingg@ece.ucsb.edu |description = 3 chambe…"

2012-07-01T18:33:05Z

Created page with "{{tool|{{PAGENAME}} |picture=Sputter2.jpg |type = Vacuum Deposition |super= Brian Lingg |phone=(805)839-3918x210 |location=Bay 1 |email=lingg@ece.ucsb.edu |description = 3 chambe…"

New page

{{tool|{{PAGENAME}}
|picture=Sputter2.jpg
|type = Vacuum Deposition
|super= Brian Lingg
|phone=(805)839-3918x210
|location=Bay 1
|email=lingg@ece.ucsb.edu
|description = 3 chamber Cluster Sputter
|manufacturer = Endeavor
|materials =
}}
= About =

This is a three chamber cluster tool for DC and AC reactive sputtering of metals and dielectrics from 8” cylindrical or 2-piece (for AC) targets. The chamber is configured for 4” diameter wafers or equivalently sized plates that can secure smaller piece samples. Samples are loaded into a cassette system capable of holding 20 wafers. The system is computer controlled through a GUI. Heating of the substrate to several hundred degrees Celcius is possible through a heating lamp module. Chamber 1 is set up for AC reactive sputtering of Al, Al2O3, AlN, SiO2, or SiN. Chamber 2 is set up for DC reactive sputtering of Ti, W, TiN, TiO2, and W-based oxides. Chamber 3 is set up for Al or Au metal sputtering and has RF back-sputtering capability on the sample for sample cleaning prior to deposition.

= Detailed Specifications =

*Multiple 4” diameter wafer capable system
*Pieces possible through appropriate carrier design
*Full programmable control through GUI
*Heating of substrate to several hundred degrees Celcius
*Chamber 1: AC sputtering of Si, SiN, SiO2, AlN, Al2O3 films
**AlN rate ~ 4.5 nm/min.
**Al2O3 ~ 6 nm/min.
**SiO2 rate ~ 4.5 nm/min.
*Chamber 2: DC sputtering of Ti, TiN, TiO2, W, and W-oxides
**Ti rate ~ 200 nm/min.
*Chamber 3: DC sputtering of Al or Au. RF back-sputtering with Argon
**Al Dep rate ~ 300-400 nm/min.