Stepper 1 (GCA 6300) - Revision history

John d: tool removed notice

2026-06-01T18:21:35Z

tool removed notice

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 == About ==
 Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wafer.

John d at 02:49, 6 December 2025

2025-12-06T02:49:31Z

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	== About ==		== About ==
	Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wafer.		Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wafer.

John d: /* CAD Files */ added Mask Making section and Cell+Layer for the CAD tempalte

2025-01-30T23:44:20Z

CAD Files: added Mask Making section and Cell+Layer for the CAD tempalte

← Older revision		Revision as of 23:44, 30 January 2025
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	The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR955CM-0.9 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0-2.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 for > 5 um thick positive processes. AZnLOF5510 for 1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.		The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR955CM-0.9 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0-2.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 for > 5 um thick positive processes. AZnLOF5510 for 1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.


	'''Tutorial:''' If you are not familiar with the differences between Contact Litho and Stepper Litho, please review this short tutorial: [https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Demis D. John - Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]		'''Tutorial:''' If you are not familiar with the differences between Contact Litho and Stepper Litho, please review this short tutorial: [https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Demis D. John - Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]

			* Explains how a Stepper mask can have ''many'' designs, and flexibly pattern the wafer with combos of designs.

	== Detailed Specifications ==		== Detailed Specifications ==
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	== Process Information ==		== Process Information ==
	*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Process Page: Photolithography Recipes]		*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Process Page: Photolithography Recipes]

			=== Mask/Reticle Design ===
	*[[GCA 6300 Mask Making Guidance]] ('''''Work in progress- not ready yet''''')		*[[GCA 6300 Mask Making Guidance]] ('''''Work in progress- not ready yet''''')

	===CAD ~~Files~~===		===CAD FIles===

	*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]		*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]
	**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''		**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''
	**''Insert your designs into the template as Instances scaled UP by 5x.''		**''Insert your designs into the template as Instances scaled UP by 5x.''
	**''During exposure, set the blades to 90/90 to block out AutoStep200 DFAS ~~openings~~''		**''During exposure, set the blades to 90/90 to block out AutoStep200 DFAS marks.''
			**''Use the Cell "'''''Reticle_Align'''''" or "'''''Reticle_AlignFlat'''''" (flattened version of the same), GDS'' '''Layer 42/0'''''.''
			**''Your device cell should have center of die at (0,0), and instance it into the template with coords (0,0), for a single-design centered on the plate.''
	*[[Media:GCA Global Mark.gds\|Global Alignment Mark CAD File (GDS)]]		*[[Media:GCA Global Mark.gds\|Global Alignment Mark CAD File (GDS)]]
	*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates\|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.		*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates\|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.

John d: added Recipes section with link to recipes, FEM analysis etc

2024-10-26T19:32:43Z

added Recipes section with link to recipes, FEM analysis etc

← Older revision		Revision as of 19:32, 26 October 2024
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⚫	=About=

		⚫	== About ==
	Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wafer.		Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wafer.

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	'''Tutorial:''' If you are not familiar with the differences between Contact Litho and Stepper Litho, please review this short tutorial: [https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Demis D. John - Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]		'''Tutorial:''' If you are not familiar with the differences between Contact Litho and Stepper Litho, please review this short tutorial: [https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Demis D. John - Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]

	=Detailed Specifications=		== Detailed Specifications ==

	*Lens: Olympus 2142: NA = 0.42; Depth of field = 1.2 um for 0.7 um process		*Lens: Olympus 2142: NA = 0.42; Depth of field = 1.2 um for 0.7 um process
	*Maximum die size: ~15 mm x 15 mm		*Maximum die size: ~15 mm x 15 mm
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	*Mask Plates: 5x5x0.090 inches, 5x reduction, typically Soda Lime Glass (Quartz is also acceptable), no pellicle.		*Mask Plates: 5x5x0.090 inches, 5x reduction, typically Soda Lime Glass (Quartz is also acceptable), no pellicle.

	=Process Information=		== Process Information ==

	*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Process Page: Photolithography Recipes]		*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Process Page: Photolithography Recipes]
	*[[GCA 6300 Mask Making Guidance]] ('''''Work in progress- not ready yet''''')		*[[GCA 6300 Mask Making Guidance]] ('''''Work in progress- not ready yet''''')
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	*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates\|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.		*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates\|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.

	=Service Provider=		== Service Provider ==

	*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.		*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.

	=Operating Procedures=		== Operating Procedures ==

	[https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions]		[https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions]
	[https://wiki.nanofab.ucsb.edu/w/images/d/d2/GCA_6300_Standard_Operating_Procedure_010524.pdf Standard Operating Procedures]		[https://wiki.nanofab.ucsb.edu/w/images/d/d2/GCA_6300_Standard_Operating_Procedure_010524.pdf Standard Operating Procedures]
	[https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)]		*[https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)] - Focus Exposure Matrix (FEM) instructions
	[https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job]		[https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job]
	[https://wiki.nanofab.ucsb.edu/w/images/3/3d/GCA_6300_-_Commands.pdf GCA 6300 User Accessible Commands]		[https://wiki.nanofab.ucsb.edu/w/images/3/3d/GCA_6300_-_Commands.pdf GCA 6300 User Accessible Commands]
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	[https://wiki.nanofab.ucsb.edu/w/images/5/5a/GCA_6300_Training_Manual-_3-23-2020.pdf Old Training Manual]		[https://wiki.nanofab.ucsb.edu/w/images/5/5a/GCA_6300_Training_Manual-_3-23-2020.pdf Old Training Manual]

			== Recipes ==
⚫	=Staff Procedures=

			* '''[[Stepper Recipes#Stepper 1 (GCA 6300)\|Recipes > Lithography > Stepper Recipes > Stepper #1]]''' - starting processes for various I-Line photoresists, including Dose/Focus values.

			To calibrate your own Litho processes, you will need to:

			* Run your own [https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Focus Exposure Matrix] - instructions for doing this on the GCA 6300.
			* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM

			Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes\|Photolithography Recipes]] page.

		⚫	== Staff Procedures ==
	''These procedures are for Staff use - contact staff if you think you need to run these!''		''These procedures are for Staff use - contact staff if you think you need to run these!''

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	== Related Tools ==		== Related Tools ==

	* [[Stepper 2 (AutoStep 200)\|Stepper 2 (GCA Autostep 200)]] - similar tool, compatible photomasks, but with automatic photomask alignment and "DFAS" automated local alignment. Can shoot multiple mask plates in single session.		* [[Stepper 2 (AutoStep 200)\|Stepper 2 (GCA Autostep 200)]] - similar tool, compatible photomasks, but with automatic photomask alignment and "DFAS" automated local alignment. Can shoot multiple mask plates in single session.

John d: added related tools

2024-10-03T05:03:28Z

added related tools

← Older revision		Revision as of 05:03, 3 October 2024
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	*[[GCA 6300 Reboot Procedures]]		*[[GCA 6300 Reboot Procedures]]

			== Related Tools ==

			* [[Stepper 2 (AutoStep 200)\|Stepper 2 (GCA Autostep 200)]] - similar tool, compatible photomasks, but with automatic photomask alignment and "DFAS" automated local alignment. Can shoot multiple mask plates in single session.

John d: /* Detailed Specifications */ added mask plate specs

2024-09-27T18:27:00Z

Detailed Specifications: added mask plate specs

← Older revision		Revision as of 18:27, 27 September 2024
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	*Minimum substrate size: ~ 10 x 10 mm		*Minimum substrate size: ~ 10 x 10 mm
	*Computer programmable recipes saved on hard disk		*Computer programmable recipes saved on hard disk
			*Mask Plates: 5x5x0.090 inches, 5x reduction, typically Soda Lime Glass (Quartz is also acceptable), no pellicle.

	=Process Information=		=Process Information=

John d: link to stepper vs. contact PPT

2024-02-13T00:43:33Z

link to stepper vs. contact PPT

← Older revision		Revision as of 00:43, 13 February 2024
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	The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR955CM-0.9 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0-2.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 for > 5 um thick positive processes. AZnLOF5510 for 1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.		The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR955CM-0.9 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0-2.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 for > 5 um thick positive processes. AZnLOF5510 for 1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.

			'''Tutorial:''' If you are not familiar with the differences between Contact Litho and Stepper Litho, please review this short tutorial: [https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Demis D. John - Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]

	=Detailed Specifications=		=Detailed Specifications=
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	=Operating Procedures=		=Operating Procedures=

	* [https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions] *		[https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions]
	* [https://wiki.nanofab.ucsb.edu/w/images/d/d2/GCA_6300_Standard_Operating_Procedure_010524.pdf Standard Operating Procedures] *		[https://wiki.nanofab.ucsb.edu/w/images/d/d2/GCA_6300_Standard_Operating_Procedure_010524.pdf Standard Operating Procedures]
	* [https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)] *		[https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)]
	* [https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job] *		[https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job]
	* [https://wiki.nanofab.ucsb.edu/w/images/3/3d/GCA_6300_-_Commands.pdf GCA 6300 User Accessible Commands] *		[https://wiki.nanofab.ucsb.edu/w/images/3/3d/GCA_6300_-_Commands.pdf GCA 6300 User Accessible Commands]
	*[[Troubleshooting and Recovery]]		*[[Troubleshooting and Recovery]]
	* [https://wiki.nanofab.ucsb.edu/w/images/5/5a/GCA_6300_Training_Manual-_3-23-2020.pdf Old Training Manual] *		[https://wiki.nanofab.ucsb.edu/w/images/5/5a/GCA_6300_Training_Manual-_3-23-2020.pdf Old Training Manual]

	=Staff Procedures=		=Staff Procedures=

Biljana: /* Operating Procedures */

2024-01-05T22:44:29Z

Operating Procedures

← Older revision		Revision as of 22:44, 5 January 2024
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	* [https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions] *		* [https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions] *
		⚫	* [https://wiki.nanofab.ucsb.edu/w/images/d/d2/GCA_6300_Standard_Operating_Procedure_010524.pdf Standard Operating Procedures] *


⚫	* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/~~GCA_6300_Standard_Operating_Procedure_122823~~.pdf Standard Operating ~~Procedure~~] *
	* [https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)] *		* [https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)] *
	* [https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job] *		* [https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job] *

Biljana: /* Operating Procedures */

2024-01-05T22:35:39Z

Operating Procedures

← Older revision		Revision as of 22:35, 5 January 2024
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	* [https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions] *		* [https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions] *


	* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/GCA_6300_Standard_Operating_Procedure_122823.pdf Standard Operating Procedure] *		* [https://wiki.nanofab.ucsb.edu/w/images/b/bb/GCA_6300_Standard_Operating_Procedure_122823.pdf Standard Operating Procedure] *
	* [https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)] *		* [https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)] *

Biljana: /* Operating Procedures */

2023-12-29T22:46:39Z

Operating Procedures

← Older revision		Revision as of 22:46, 29 December 2023
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	* [https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job] *		* [https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job] *
	* [https://wiki.nanofab.ucsb.edu/w/images/3/3d/GCA_6300_-_Commands.pdf GCA 6300 User Accessible Commands] *		* [https://wiki.nanofab.ucsb.edu/w/images/3/3d/GCA_6300_-_Commands.pdf GCA 6300 User Accessible Commands] *


⚫	* [https://wiki.nanofab.ucsb.edu/w/images/5/5a/GCA_6300_Training_Manual-_3-23-2020.pdf Old Training Manual] *
	*[[Troubleshooting and Recovery]]		*[[Troubleshooting and Recovery]]
		⚫	* [https://wiki.nanofab.ucsb.edu/w/images/5/5a/GCA_6300_Training_Manual-_3-23-2020.pdf Old Training Manual] *

	=Staff Procedures=		=Staff Procedures=