Stepper 2 (AutoStep 200) Operating Procedures - Revision history

Biljana: /* Other Useful links for this system: */ two alignments

2024-01-08T23:24:25Z

Other Useful links for this system:: two alignments

← Older revision		Revision as of 23:24, 8 January 2024
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	*[[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]		*[[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]

	*'''Two Alignments ~~'''~~		== Two Alignments: ==

⚫	*'''WAFER ~~ALIGNMENT~~ TO ~~SYSTEM~~ ''/ <u>Global (Manual Operation Only</u>)~~'''''~~

		⚫	=== <small>1) Wafer alignment to the system ''/'' <u>Global (Manual Operation Only</u>)</small> ===
	The keyboard alone is used in this part of the exposure sequence to align the wafer to the system. The sequence of operations you do will depend on whether or not you used standard alignment keys or not. If you placed the sample close to the position you did during the first exposure, you should see an alignment mark in the right side of the screen. If not, you will need to find this mark using the position joystick by following a spiraling outward from the initial position. Pressing “F” repeatedly on the keyboard will do this spiral finding for you automatically. The red arrows on the number keys indicate the direction of movement for each keystroke. There are also + and -theta (angle) keys for rotation. Inc and Dec are used for microscope focus. The enter key on the numeric keypad changes from fast to slow movement. To change the joystick speed hit O on the main keyboard. Once the alignment mark is found follow one of the following procedures. Most of the time we use '''Non-Standard Alignment keys''':		The keyboard alone is used in this part of the exposure sequence to align the wafer to the system. The sequence of operations you do will depend on whether or not you used standard alignment keys or not. If you placed the sample close to the position you did during the first exposure, you should see an alignment mark in the right side of the screen. If not, you will need to find this mark using the position joystick by following a spiraling outward from the initial position. Pressing “F” repeatedly on the keyboard will do this spiral finding for you automatically. The red arrows on the number keys indicate the direction of movement for each keystroke. There are also + and -theta (angle) keys for rotation. Inc and Dec are used for microscope focus. The enter key on the numeric keypad changes from fast to slow movement. To change the joystick speed hit O on the main keyboard. Once the alignment mark is found follow one of the following procedures. Most of the time we use '''Non-Standard Alignment keys''':

	'''''Standard Alignment Keys:'''''		'''Standard Alignment Keys:'''

	#Adjust the focus (Inc and Dec keys) to get a crisp image (you might have to change speed with the Fast/Slow key).		#Adjust the focus (Inc and Dec keys) to get a crisp image (you might have to change speed with the Fast/Slow key).
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	#Repeat process until satisfied with the alignment. You can obtain better than 0.2 um alignment consistently if you are careful.		#Repeat process until satisfied with the alignment. You can obtain better than 0.2 um alignment consistently if you are careful.

	'''''Non-Standard Alignment Keys'':'''		'''Non-Standard Alignment Keys:'''

	#Adjust the focus (Inc and Dec keys) to get a crisp image (you might have to change speed).		#Adjust the focus (Inc and Dec keys) to get a crisp image (you might have to change speed).
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	#Computer may ask for next wafer. To escape out of this press CTRL C followed by A and the enter key to abort out of the loop. If you have another wafer with the same job\pass, you can do it now without aborting.		#Computer may ask for next wafer. To escape out of this press CTRL C followed by A and the enter key to abort out of the loop. If you have another wafer with the same job\pass, you can do it now without aborting.

	*'''~~WAFER~~ ~~ALIGNMENT~~ TO ~~MASK~~ ''/ <u>Local Alignment (DFAS)</u>''''' '':''		=== <small>2) '''Wafer Alignment to mask ''/'' <u>Local Alignment (DFAS)</u>''' :</small> ===

	The best way to use this is to use a mapping routine followed by a shoot using the corrections given by the map. A mapping routine should be set-up in your mapping pass. Usually we do not map all dies, just selected ones. You could selected in each row few dies. The mapping pass should have a name different then any other pass. It could be named '''mapxx''' or some other name (for example: '''local'''). Make sure you specify '''die x die''' is to be used and that you have the correct key offsets for the global and local alignment marks. The command you will use is:		The best way to use this is to use a mapping routine followed by a shoot using the corrections given by the map. A mapping routine should be set-up in your mapping pass. Usually we do not map all dies, just selected ones. You could selected in each row few dies. The mapping pass should have a name different then any other pass. It could be named '''mapxx''' or some other name (for example: '''local'''). Make sure you specify '''die x die''' is to be used and that you have the correct key offsets for the global and local alignment marks. The command you will use is:

	'''MAP jobname\mapxx, passname'''		* '''MAP jobname\mapxx, passname'''

	#Proceed as normal. Find a global alignment mark and do your best alignment. The first pass (mapxx) is the mapping pass. The system will do mapping, using dies that are selected in mapping pass. It will look for DFAS alignment mark in each die, and make corrections. When asked to make corrections, say yes. After corrections are applied, the exposure job will be performed shooting the pass named " passname". Follow instructions on screen when using this function.		#Proceed as normal. Find a global alignment mark and do your best alignment. The first pass (mapxx) is the mapping pass. The system will do mapping, using dies that are selected in mapping pass. It will look for DFAS alignment mark in each die, and make corrections. When asked to make corrections, say yes. After corrections are applied, the exposure job will be performed shooting the pass named " passname". Follow instructions on screen when using this function.

Biljana: /* Other Useful links for this system: */

2024-01-08T23:17:26Z

Biljana: /* Running a FOCUS and\or EXPOSURE matrix */

2024-01-08T19:05:39Z

Running a FOCUS and\or EXPOSURE matrix

← Older revision		Revision as of 19:05, 8 January 2024
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	#Remove the sample from the stage when done. (If Match was enabled, you will have to wait until the match is done again. It will do this before asking you for the next wafer). Develop resist and inspect in microscope for alignment (if needed)		#Remove the sample from the stage when done. (If Match was enabled, you will have to wait until the match is done again. It will do this before asking you for the next wafer). Develop resist and inspect in microscope for alignment (if needed)
	#Computer will ask for next wafer. To escape out of this press CTRL C followed by A and the enter key to abort out of the loop. If you have another wafer with the same job\pass, you can do it now without aborting by placing it on the chuck and hitting MANUAL.		#Computer will ask for next wafer. To escape out of this press CTRL C followed by A and the enter key to abort out of the loop. If you have another wafer with the same job\pass, you can do it now without aborting by placing it on the chuck and hitting MANUAL.

	=='''Running a FOCUS and\or EXPOSURE matrix'''==
	The system is calibrated weekly on 4 inch Si wafers using resist SPR 955-0.9 and standard chuck (4”-500um). Your substrate type, thickness, and resist may require different focus and exposure setting than the standard calibration. A focus and\or exposure matrix should be done for each resist, to tweak your process relative to the calibration baseline. Once the process is optimized for a specific resist, the exposure time\focus will not change in future, since the lamp power is hold constant all the time.

	The focus and\or exposure matrix (aka. "FEM" or "FEA") can be varied across this array to determine the optimum focus relative to the baseline. One focus step is equal to 0.1 um of focus depth. FOCUS OFFSET is an INTEGER!

	*'''+1=0.1um of lens movement up from the wafer'''
	*'''-1=0.1um of lens movement down toward the wafer'''

	#Before doing an EXPO job, LOG IN to [10,1] and type “CHUCK” – set the correct chuck size for the substrate (4” wafer-would be 100)
	#Use the command '''EXPO jobname\passname''' and hit enter
	#Enter starting row within array specified in the pass (for example : 1)
	#Enter ending row within the array specified in the pass (for example:6, depending how big is die size, and how many dies can fit in X direction)
	#Enter starting column within array specified in the pass (for example:1)
	#Enter ending column within the array specified in the pass(for example:6)
	#Enter either '''F=to vary the focus''', '''E= to vary the exposure''', or '''R for both''' (to increment '''focus''' for each row '''and''' '''exposure''' for each column within the array)
	#Enter the parameters as prompted by the computer. They will differ based on which option is chosen.
	#“Start AWH” process – press MANUAL when prompted
	#Press the MANUAL again
	#If you are doing an aligned test (like for exposure on top of a mesa) align the wafer now, press “EXPOSE”
	#If you are NOT doing an aligned test, just press “EXPOSE”
	#The command '''EXPO''' will shoot a specified serpentine array based on the parameters in your job\pass (first exposure - upper left corner)
	#When exposure is finished, follow the recipe (post exposure bake if needed) with development. Please take your time for inspection, and select best exposure time and focus.
	#The computer will ask you for the best row and column. Enter row and column number
	#The computer will then tell you the focus and exposure based on the row and column you input
	#'''Do not update system focus !''' Input a focus offset into your own exposure job. (If you accidentally update system focus, you must change it back using the MODE command)
	#Unload the mask plate, and LOG OUT

Biljana: /* Resist spin coating and cleaning the back-side of wafer */ organizing SOP as they are for GCA 6300

2024-01-08T19:05:10Z

Resist spin coating and cleaning the back-side of wafer: organizing SOP as they are for GCA 6300

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 *[[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]] - Detailed Info on the same
 *[[Autostep 200 Mask Making Guidance|Stepper 2 (Autostep 200) -  Mask Making Guidance]]
 *'''WAFER ALIGNMENT TO SYSTEM ''/ <u>Global (Manual Operation Only</u>)'''''

John d: /* Other Useful links for this system: */ explained Quick vs Detailed

2023-08-28T22:33:54Z

Other Useful links for this system:: explained Quick vs Detailed

← Older revision		Revision as of 22:33, 28 August 2023
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	== Other Useful links for this system: ==		==Other Useful links for this system:==

	*[[Stepper 2 (Autostep 200) - Chuck Selection]]		*[[Stepper 2 (Autostep 200) - Chuck Selection]] - Quick Summary
	*[[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]]		*[[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]] - Detailed Info on the same
	*[[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]		*[[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]

John d: heading for useful links

2023-08-28T21:36:16Z

heading for useful links

← Older revision		Revision as of 21:36, 28 August 2023
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	Other Useful links for this system:		== Other Useful links for this system: ==

	* [[Stepper 2 (Autostep 200) - Chuck Selection]]		*[[Stepper 2 (Autostep 200) - Chuck Selection]]
	* [[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]]		*[[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]]
	* [[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]		*[[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]

	==~~'''~~Resist spin coating and cleaning the back-side of wafer~~'''~~==		==Resist spin coating and cleaning the back-side of wafer==
	Wafer (or piece part) needs to be clean before spinning resist. This could be simply ACE/IPA clean followed by dehydration bake. If the back side of wafer (or piece part) has some resist residue or particulates, this can cause errors in the interpreted best focus point since the wafer surface may be at a different height.		Wafer (or piece part) needs to be clean before spinning resist. This could be simply ACE/IPA clean followed by dehydration bake. If the back side of wafer (or piece part) has some resist residue or particulates, this can cause errors in the interpreted best focus point since the wafer surface may be at a different height.

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	The system is calibrated weekly on 4 inch Si wafers using resist SPR 955-0.9 and standard chuck (4”-500um). Your substrate type, thickness, and resist may require different focus and exposure setting than the standard calibration. A focus and\or exposure matrix should be done for each resist, to tweak your process relative to the calibration baseline. Once the process is optimized for a specific resist, the exposure time\focus will not change in future, since the lamp power is hold constant all the time.		The system is calibrated weekly on 4 inch Si wafers using resist SPR 955-0.9 and standard chuck (4”-500um). Your substrate type, thickness, and resist may require different focus and exposure setting than the standard calibration. A focus and\or exposure matrix should be done for each resist, to tweak your process relative to the calibration baseline. Once the process is optimized for a specific resist, the exposure time\focus will not change in future, since the lamp power is hold constant all the time.

	The focus and\or exposure can be varied across this array to determine the optimum focus relative to the baseline. One focus step is equal to 0.1 um of focus depth. FOCUS OFFSET is an INTEGER!		The focus and\or exposure matrix (aka. "FEM" or "FEA") can be varied across this array to determine the optimum focus relative to the baseline. One focus step is equal to 0.1 um of focus depth. FOCUS OFFSET is an INTEGER!

	*'''+1=0.1um of lens movement up from the wafer'''		*'''+1=0.1um of lens movement up from the wafer'''

John d: links to other pages at top

2023-08-28T21:34:40Z

links to other pages at top

← Older revision		Revision as of 21:34, 28 August 2023
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			Other Useful links for this system:

			* [[Stepper 2 (Autostep 200) - Chuck Selection]]
			* [[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]]
			* [[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]

	=='''Resist spin coating and cleaning the back-side of wafer'''==		=='''Resist spin coating and cleaning the back-side of wafer'''==
	Wafer (or piece part) needs to be clean before spinning resist. This could be simply ACE/IPA clean followed by dehydration bake. If the back side of wafer (or piece part) has some resist residue or particulates, this can cause errors in the interpreted best focus point since the wafer surface may be at a different height.		Wafer (or piece part) needs to be clean before spinning resist. This could be simply ACE/IPA clean followed by dehydration bake. If the back side of wafer (or piece part) has some resist residue or particulates, this can cause errors in the interpreted best focus point since the wafer surface may be at a different height.
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	##See this link for a detailed table of [[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses\|Substrate Thickness, Shim thickness and Target Thickness]]		##See this link for a detailed table of [[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses\|Substrate Thickness, Shim thickness and Target Thickness]]
	##If you need a shim with different thickness you can try cutting some shim stock (stored in drawer next to Autostep200).		##If you need a shim with different thickness you can try cutting some shim stock (stored in drawer next to Autostep200).
	##'''Mandatory''': The <u>shim needs to be removed from the back side of chuck</u> once the job is finished. Please, do not leave it for the next user to do it.		##'''Mandatory''': The <u>shim needs to be removed from the back side of chuck</u> once the job is finished. Please, do not leave it for the next user to do it.
	#Place a wafer centered on the chuck, noting the orientation (major flat always touching '''two front screws''', minor flat touching the screw either on left or right side)		#Place a wafer centered on the chuck, noting the orientation (major flat always touching '''two front screws''', minor flat touching the screw either on left or right side)
	#If you are doing an alignment step, make sure to place the wafer in the same orientation as it was in the first exposure.		#If you are doing an alignment step, make sure to place the wafer in the same orientation as it was in the first exposure.

Biljana at 02:57, 23 March 2020

2020-03-23T02:57:12Z

← Older revision		Revision as of 02:57, 23 March 2020
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	{{WIP}}
	=='''Resist spin coating and cleaning the back-side of wafer'''==		=='''Resist spin coating and cleaning the back-side of wafer'''==
	Wafer (or piece part) needs to be clean before spinning resist. This could be simply ACE/IPA clean followed by dehydration bake. If the back side of wafer (or piece part) has some resist residue or particulates, this can cause errors in the interpreted best focus point since the wafer surface may be at a different height.		Wafer (or piece part) needs to be clean before spinning resist. This could be simply ACE/IPA clean followed by dehydration bake. If the back side of wafer (or piece part) has some resist residue or particulates, this can cause errors in the interpreted best focus point since the wafer surface may be at a different height.

Biljana at 16:19, 11 October 2019

2019-10-11T16:19:17Z

← Older revision		Revision as of 16:19, 11 October 2019
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	##See this link for a detailed table of [[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses\|Substrate Thickness, Shim thickness and Target Thickness]]		##See this link for a detailed table of [[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses\|Substrate Thickness, Shim thickness and Target Thickness]]
	##If you need a shim with different thickness you can try cutting some shim stock (stored in drawer next to Autostep200).		##If you need a shim with different thickness you can try cutting some shim stock (stored in drawer next to Autostep200).
			##'''Mandatory''': The <u>shim needs to be removed from the back side of chuck</u> once the job is finished. Please, do not leave it for the next user to do it.
	#Place a wafer centered on the chuck, noting the orientation (major flat always touching '''two front screws''', minor flat touching the screw either on left or right side)		#Place a wafer centered on the chuck, noting the orientation (major flat always touching '''two front screws''', minor flat touching the screw either on left or right side)
	#If you are doing an alignment step, make sure to place the wafer in the same orientation as it was in the first exposure.		#If you are doing an alignment step, make sure to place the wafer in the same orientation as it was in the first exposure.

Biljana at 16:14, 11 October 2019

2019-10-11T16:14:52Z

Show changes

← Older revision		Revision as of 23:17, 8 January 2024
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	*[[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]] - Detailed Info on the same		*[[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]] - Detailed Info on the same
	*[[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]		*[[Autostep 200 Mask Making Guidance\|Stepper 2 (Autostep 200) - Mask Making Guidance]]

			*'''Two Alignments '''

	*'''WAFER ALIGNMENT TO SYSTEM ''/ <u>Global (Manual Operation Only</u>)'''''		*'''WAFER ALIGNMENT TO SYSTEM ''/ <u>Global (Manual Operation Only</u>)'''''