Stepper Recipes - Revision history

John d: /* Stepper 3 (ASML DUV) */ updated DUV TOC

2026-02-12T01:52:11Z

Stepper 3 (ASML DUV): updated DUV TOC

← Older revision		Revision as of 01:52, 12 February 2026
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	=[[Stepper 3 (ASML DUV)]]=		=[[Stepper 3 (ASML DUV)]]=
	{\| class="wikitable"		{\| class="wikitable"
	!Stepper 3: Table of Contents		!Stepper 3: Table of Contents (DUV)
	\|-		\|-
	\|		\|
	#[[Stepper_Recipes#Process_Control_Data\|Process Control Data]]		#[[Stepper_Recipes#Process_Control_Data\|Process Control Data]]
			#[[Stepper Recipes#General Litho + Recipe Info\|General Litho + Recipe Info]]
	#[[Stepper Recipes#Photomasks .26 Job Programming\|Photomasks & Job Programming]]		#[[Stepper Recipes#Photomasks .26 Job Programming\|Photomasks & Job Programming]]
	#[[Stepper Recipes#Anti-Reflective Coatings\|Anti-Reflective Coatings]]		#[[Stepper Recipes#Anti-Reflective Coatings\|Anti-Reflective Coatings]]
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	##Edge Bead Removal		##Edge Bead Removal
	##Lift-off Processes		##Lift-off Processes
			##FEM Analysis
	\|}		\|}

John d at 01:50, 12 February 2026

2026-02-12T01:50:03Z

← Older revision		Revision as of 01:50, 12 February 2026
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	Below is a listing of stepper lithography recipes.		Below is a listing of stepper lithography recipes.
			Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities.
⚫	~~Stepper~~ ~~1 and Stepper 2 are i-line systems with good piece handling capabilities.  Stepper 3~~ is a ~~DUV~~ ~~(248nm)~~ ~~system~~ ~~primarily~~ ~~used~~ ~~for~~ ~~full~~ ~~100mm wafers.~~ ~~ DUV~~ ~~resists~~ do ~~not~~ ~~work~~ ~~for~~ ~~i-line~~ and ~~i-line~~ ~~resists~~ do ~~not~~ ~~work~~ ~~for~~ ~~DUV~~. ~~ ~~Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography, the exposure time / focus offset parameters may vary.

			Stepper 3 is a DUV (248nm) system primarily used for full 100mm wafers. DUV resists do not work for i-line and i-line resists do not work for DUV.
	This listing is a guideline to get you started. For critical lithography steps, you should run your own exposure and/or focus array to determine the proper parameters.

		⚫	This listing is a guideline to get you started. For critical lithography steps, you should run your own exposure and/or focus array to determine the proper parameters. Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography, the exposure time / focus offset parameters may vary.
⚫	The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems. ~~ ~~See the underlayer datasheets for details. ~~ ~~ Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.

		⚫	The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems. See the underlayer datasheets for details. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.

	Parameters are indicated in separate tables for each stepper system.		Parameters are indicated in separate tables for each stepper system.

			__TOC__

	=[[Stepper 1 (GCA 6300)]]=		=[[Stepper 1 (GCA 6300)]]=

John d: /* Stepper 3 (ASML DUV) */

2026-02-12T01:47:29Z

Stepper 3 (ASML DUV)

← Older revision		Revision as of 01:47, 12 February 2026
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	\|}		\|}

	===Particle Checks===		=== Particle Checks ===
	Our cal process enables both ~300nm critical dimension logging, and also allows us to see when a particle is present on the exposure chuck (a "hot spot").		Our cal process enables both ~300nm critical dimension logging, and also allows us to see when a particle is present on the exposure chuck (a "hot spot").
	[[File:ASML Cal Particle Check.png\|alt=Image showing 2 wafers with colorful rainbow patterns, both show a black spot on the right side.\|none\|thumb\|Both wafers show a "hot spot" on the left side, so the tool has a particle at that location, requiring physical cleaning. (''Demis D. John, 2024'')]]		[[File:ASML Cal Particle Check.png\|alt=Image showing 2 wafers with colorful rainbow patterns, both show a black spot on the right side.\|none\|thumb\|Both wafers show a "hot spot" on the left side, so the tool has a particle at that location, requiring physical cleaning. (''Demis D. John, 2024'')]]

John d: /* ASML Focus movement */

2026-02-04T02:03:56Z

ASML Focus movement

← Older revision		Revision as of 02:03, 4 February 2026
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	=== ASML Focus movement ===		=== ASML Focus movement ===
	A positive focus offset moves the wafer stage upwards.		A positive focus offset moves the wafer stage upwards, closer to the lens.

	=== Feature Size vs. Dose ===		=== Feature Size vs. Dose ===
	The ASML tends to give fine control over feature size via variations in Exposure Dose (mJ/cm<sup>2</sup>). One such process is plotted here, for ~200nm fixed hole size on the mask plate:		The ASML tends to give fine control over feature size via variations in Exposure Dose (mJ/cm<sup>2</sup>). One such process is plotted here, for 200nm fixed hole size on the mask plate:
	[[File:ASML Dose vs Hole Diam - AT230829.png\|none\|thumb\|484x484px\|Plot of Dose vs. Hole Diameter for UV6-0.8 (credit: [[Foong Fatt]] & [[Demis D. John]])]]		[[File:ASML Dose vs Hole Diam - AT230829.png\|none\|thumb\|484x484px\|Plot of Dose vs. Hole Diameter for UV6-0.8 (credit: [[Foong Fatt]] & [[Demis D. John]])]]

John d: /* Other Lithography Processes (ASML DUV) */

2025-10-07T21:08:37Z

Other Lithography Processes (ASML DUV)

← Older revision		Revision as of 21:08, 7 October 2025
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	*[[ASML DUV: Edge Bead Removal via Photolithography\|DUV Photolithographic Edge Bead Removal]]		*[[ASML DUV: Edge Bead Removal via Photolithography\|DUV Photolithographic Edge Bead Removal]]
	*[[Lift-Off with DUV Imaging + PMGI Underlayer\|DUV Lift-Off Process with PMGI Underlayer]]		*[[Lift-Off with DUV Imaging + PMGI Underlayer\|DUV Lift-Off Process with PMGI Underlayer]]
			* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix\|Lithography Calibration - Analyzing a Focus-Exposure Matrix (FEM)]] - Projection litho systems (steppers, direct-writers) usually require a lithography calibration, using a Focus-Exposure Matrix/Array (FEM/FEA).

John d: /* BARC (Anti-Reflection Coating) Etching */

2025-10-06T23:50:37Z

BARC (Anti-Reflection Coating) Etching

← Older revision		Revision as of 23:50, 6 October 2025
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	The DUV42P BARC layer, which is best suited for resolving small features, needs to be O2 etched after develop.		The DUV42P BARC layer, which is best suited for resolving small features, needs to be O2 etched after develop.

	Counter-intuitively, this does ''not'' lead to your total resist thickness being thinner, as explained in [https://www.fabublox.com/process-editor/e70f6d97-b27b-4c05-ac45-479cec8a9f0b this FabuBlox process schematic] (login may be required to view).		Counter-intuitively, this does ''not'' lead to your total resist thickness being significantly thinner, as explained in [https://www.fabublox.com/process-editor/e70f6d97-b27b-4c05-ac45-479cec8a9f0b this FabuBlox process schematic] (login may be required to view). (Provided you do not overetch by an excessive amount.)

	"BARC" and "ARC" etches have been written and ~~made~~ available on all our primary etchers.		"BARC" and "ARC" etches have been written/test and are available on all our primary etchers.

	Here are links to the recipes for each etcher: [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 ICP#1], [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 ICP#2], [https://wiki.nanotech.ucsb.edu/w/index.php?title=RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 RIE#5], [https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 FL-ICP] & [[Ashers (Technics PEII)\|Technics PEii ashers]].		Here are links to the recipes for each etcher: [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 ICP#1], [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 ICP#2], [https://wiki.nanotech.ucsb.edu/w/index.php?title=RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 RIE#5], [https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 FL-ICP] & [[Ashers (Technics PEII)\|Technics PEii ashers]].

John d: /* Feature Size vs. Dose */

2025-10-06T23:49:06Z

Feature Size vs. Dose

← Older revision		Revision as of 23:49, 6 October 2025
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	=== Feature Size vs. Dose ===		=== Feature Size vs. Dose ===
	The ASML tends to give fine control over feature size via variations in Exposure Dose (mJ/cm<sup>2</sup>). One such process is plotted here:		The ASML tends to give fine control over feature size via variations in Exposure Dose (mJ/cm<sup>2</sup>). One such process is plotted here, for ~200nm fixed hole size on the mask plate:
	[[File:ASML Dose vs Hole Diam - AT230829.png\|none\|thumb\|484x484px\|Plot of Dose vs. Hole Diameter for UV6-0.8 (credit: [[Foong Fatt]] & [[Demis D. John]])]]		[[File:ASML Dose vs Hole Diam - AT230829.png\|none\|thumb\|484x484px\|Plot of Dose vs. Hole Diameter for UV6-0.8 (credit: [[Foong Fatt]] & [[Demis D. John]])]]

John d: /* Photomasks & Job Programming */ "general" seciton, added Dose vs Hole Diam for litho

2025-08-12T00:21:10Z

Photomasks & Job Programming: "general" seciton, added Dose vs Hole Diam for litho

← Older revision		Revision as of 00:21, 12 August 2025
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	Our cal process enables both ~300nm critical dimension logging, and also allows us to see when a particle is present on the exposure chuck (a "hot spot").		Our cal process enables both ~300nm critical dimension logging, and also allows us to see when a particle is present on the exposure chuck (a "hot spot").
	[[File:ASML Cal Particle Check.png\|alt=Image showing 2 wafers with colorful rainbow patterns, both show a black spot on the right side.\|none\|thumb\|Both wafers show a "hot spot" on the left side, so the tool has a particle at that location, requiring physical cleaning. (''Demis D. John, 2024'')]]		[[File:ASML Cal Particle Check.png\|alt=Image showing 2 wafers with colorful rainbow patterns, both show a black spot on the right side.\|none\|thumb\|Both wafers show a "hot spot" on the left side, so the tool has a particle at that location, requiring physical cleaning. (''Demis D. John, 2024'')]]
			==General Litho + Recipe Info==
⚫	==Photomasks & Job Programming==

		⚫	=== Photomasks & Job Programming ===
	You can find info on making photomasks, CAD files for alignment marks, and other Job programming tools on the main Tool page, here:		You can find info on making photomasks, CAD files for alignment marks, and other Job programming tools on the main Tool page, here:

	[[Stepper 3 (ASML DUV)#Design%20Tools\|Stepper 3 (ASML DUV) > Design Tools]]		[[Stepper 3 (ASML DUV)#Design%20Tools\|Stepper 3 (ASML DUV) > Design Tools]]

	ASML Focus movement:		=== ASML Focus movement ===

	A positive focus offset moves the wafer stage upwards.		A positive focus offset moves the wafer stage upwards.

			=== Feature Size vs. Dose ===
			The ASML tends to give fine control over feature size via variations in Exposure Dose (mJ/cm<sup>2</sup>). One such process is plotted here:
			[[File:ASML Dose vs Hole Diam - AT230829.png\|none\|thumb\|484x484px\|Plot of Dose vs. Hole Diameter for UV6-0.8 (credit: [[Foong Fatt]] & [[Demis D. John]])]]

			=== BARC (Anti-Reflection Coating) Etching ===
			The DUV42P BARC layer, which is best suited for resolving small features, needs to be O2 etched after develop.

			Counter-intuitively, this does ''not'' lead to your total resist thickness being thinner, as explained in [https://www.fabublox.com/process-editor/e70f6d97-b27b-4c05-ac45-479cec8a9f0b this FabuBlox process schematic] (login may be required to view).

			"BARC" and "ARC" etches have been written and made available on all our primary etchers.

			Here are links to the recipes for each etcher: [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 ICP#1], [https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 ICP#2], [https://wiki.nanotech.ucsb.edu/w/index.php?title=RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 RIE#5], [https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 FL-ICP] & [[Ashers (Technics PEII)\|Technics PEii ashers]].

	==Anti-Reflective Coatings==		==Anti-Reflective Coatings==

John d: /* Negative Resist (GCA 6300) */ added 5214 info

2024-08-21T17:15:49Z

Negative Resist (GCA 6300): added 5214 info

← Older revision		Revision as of 17:15, 21 August 2024
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	! width="125" \|Exposure Time		! width="125" \|Exposure Time
	! width="100" \|Focus Offset		! width="100" \|Focus Offset
	! width="75" \|PEB		! width="75" \|PEB*
	! width="75" \|Flood		! width="75" \|Flood**
	! width="100" \|Developer		! width="100" \|Developer
	! width="125" \|Developer Time		! width="125" \|Developer Time
	! width="300" \|Comments		! width="300" \|Comments
	\|-		\|-
	\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]		\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]**
	\|6 krpm/30”		\|6 krpm/30”
	\|95°C/60”		\|95°C/60”
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	\| -6		\| -6
	\|110°C/60”		\|110°C/60”
			\|none
⚫	\|0
	\|AZ300MIF		\|AZ300MIF
	\|60"		\|60"
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	\| -6		\| -6
	\|110°C/60”		\|110°C/60”
			\|none
⚫	\|0
	\|AZ300MIF		\|AZ300MIF
	\|90"		\|90"
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	*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.		*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.
	*{{fl\|nLOF2020stepperrecipe.pdf\|See nLOF2020 Data File}}		*{{fl\|nLOF2020stepperrecipe.pdf\|See nLOF2020 Data File}}
		⚫	\|-

			\| colspan="11" \|* PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
			<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.
	\|}		\|}

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	! width="125" \|Exposure Time		! width="125" \|Exposure Time
	! width="100" \|Focus Offset		! width="100" \|Focus Offset
	! width="75" \|PEB		! width="75" \|PEB*
	! width="75" \|Flood		! width="75" \|Flood**
	! width="100" \|Developer		! width="100" \|Developer
	! width="125" \|Developer Time		! width="125" \|Developer Time
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	\|-		\|-
	\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]		\|[[Media:AZ5214-Negative-Resist-Datasheet.pdf\|AZ5214]]**
	\|6 krpm/30”		\|6 krpm/30”
	\|95°C/60”		\|95°C/60”
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	*Use heated 1165 stripper for removal 8Hrs min.		*Use heated 1165 stripper for removal 8Hrs min.
	*{{fl\|NR9-1000PY-AS200-stepperrecipe.pdf\|See NR9-1000PY As200 data file}}		*{{fl\|NR9-1000PY-AS200-stepperrecipe.pdf\|See NR9-1000PY As200 data file}}
		⚫	\|-
			\| colspan="11" \|*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
			<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)\|MA6]] or [[Suss Aligners (SUSS MJB-3)\|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process\|basic AZ5214 process]], it is different than typical negative resists.
	\|}		\|}

John d: /* Photomasks & Job Programming */

2024-08-10T05:40:50Z

Photomasks & Job Programming

← Older revision		Revision as of 05:40, 10 August 2024
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	[[Stepper 3 (ASML DUV)#Design%20Tools\|Stepper 3 (ASML DUV) > Design Tools]]		[[Stepper 3 (ASML DUV)#Design%20Tools\|Stepper 3 (ASML DUV) > Design Tools]]

			ASML Focus movement:

			A positive focus offset moves the wafer stage upwards.

	==Anti-Reflective Coatings==		==Anti-Reflective Coatings==

← Older revision		Revision as of 21:08, 7 October 2025
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	*[[ASML DUV: Edge Bead Removal via Photolithography\|DUV Photolithographic Edge Bead Removal]]		*[[ASML DUV: Edge Bead Removal via Photolithography\|DUV Photolithographic Edge Bead Removal]]
	*[[Lift-Off with DUV Imaging + PMGI Underlayer\|DUV Lift-Off Process with PMGI Underlayer]]		*[[Lift-Off with DUV Imaging + PMGI Underlayer\|DUV Lift-Off Process with PMGI Underlayer]]
			* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix\|Lithography Calibration - Analyzing a Focus-Exposure Matrix (FEM)]] - Projection litho systems (steppers, direct-writers) usually require a lithography calibration, using a Focus-Exposure Matrix/Array (FEM/FEA).