Thermal Processing Recipes - Revision history

Biljana: /* Available Recipes (Tystar 8300) */

2025-04-23T18:18:15Z

Available Recipes (Tystar 8300)

← Older revision		Revision as of 18:18, 23 April 2025
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	*DRYVAR.003 - ''DryOx, variable temp.''		*DRYVAR.003 - ''DryOx, variable temp.''
	*ANNEAL.003 - ''Anneal with variable time and temperature''		*ANNEAL.003 - ''Anneal with variable time and temperature''
	Data: Tube3, Recipe "~~WetVAr~~.003" at 750C, TOX rate= 0.228nm/min, n@632.8nm= 1.47067, BHF etch rate=79nm/min		Data: Tube3, Recipe "WetVar.003" at 750C, TOX rate= 0.228nm/min, n@632.8nm= 1.47067, BHF etch rate=79nm/min

	===Process Limits (Tystar 8300)===		===Process Limits (Tystar 8300)===

Biljana: /* Tystar 8300 */ added index

2025-04-23T18:17:53Z

Tystar 8300: added index

← Older revision		Revision as of 18:17, 23 April 2025
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	*DRYVAR.003 - ''DryOx, variable temp.''		*DRYVAR.003 - ''DryOx, variable temp.''
	*ANNEAL.003 - ''Anneal with variable time and temperature''		*ANNEAL.003 - ''Anneal with variable time and temperature''
	Data: Tube3, Recipe "WetVAr.003" at 750C, TOX rate= 0.228nm/min, BHF etch rate=79nm/min		Data: Tube3, Recipe "WetVAr.003" at 750C, TOX rate= 0.228nm/min, n@632.8nm= 1.47067, BHF etch rate=79nm/min

	===Process Limits (Tystar 8300)===		===Process Limits (Tystar 8300)===

Biljana: /* Available Recipes (Tystar 8300) */ Adding TOX rate and BHF etch rate for Thermally grown Oxide in Tube #3 at 750C

2025-04-23T18:12:44Z

Available Recipes (Tystar 8300): Adding TOX rate and BHF etch rate for Thermally grown Oxide in Tube #3 at 750C

← Older revision		Revision as of 18:12, 23 April 2025
Line 19:		Line 19:
	*DRYVAR.003 - ''DryOx, variable temp.''		*DRYVAR.003 - ''DryOx, variable temp.''
	*ANNEAL.003 - ''Anneal with variable time and temperature''		*ANNEAL.003 - ''Anneal with variable time and temperature''
			Data: Tube3, Recipe "WetVAr.003" at 750C, TOX rate= 0.228nm/min, BHF etch rate=79nm/min

	===Process Limits (Tystar 8300)===		===Process Limits (Tystar 8300)===
	*'''Max temperatures (Tystar 8300)'''		*'''Max temperatures (Tystar 8300)'''

Biljana: /* Available Recipes (Tystar 8300) */

2025-04-23T17:59:09Z

Available Recipes (Tystar 8300)

← Older revision		Revision as of 17:59, 23 April 2025
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	*WET1050.003 - ''WetOx at 1050°C''		*WET1050.003 - ''WetOx at 1050°C''
	*DRY1050.003 - ''DryOx at 1050°C''		*DRY1050.003 - ''DryOx at 1050°C''
	*WETVAR.003 - ''WetOx, variable temp.''		*WETVAR.003 - ''WetOx, variable temp.''
	*DRYVAR.003 - ''DryOx, variable temp.''		*DRYVAR.003 - ''DryOx, variable temp.''
	*ANNEAL.003 - ''Anneal with variable time and temperature''		*ANNEAL.003 - ''Anneal with variable time and temperature''

John d: moved calculation times to "thermal ox" recipes, renamed "thermal ox recipes" to just "Ox recipes (tystar 8300)"

2024-10-24T22:01:31Z

moved calculation times to "thermal ox" recipes, renamed "thermal ox recipes" to just "Ox recipes (tystar 8300)"

@@ Line 28: / Line 28: @@
 *'''WET1050''' may not be run for more than 24hrs without authorization, due to O2 bottle capacity. Contact supervisor if need to run longer.
 *No recipe should be run with >1slpm gas flow without discussing with supervisor first, or gas bottles will be depleted very fast and likely run out during your process.
 === Wafer Cleaning ===
 For Tube #2, Silicon wafer cleaning, the following process is recommended:
@@ Line 48: / Line 40: @@
 # Ready to load into Tystar quartz boats, run recipe on Tystar.
-===Thermal Oxidation Recipes===
+===Oxidation Recipes (Tystar 8300)===
 ====1050°C Dry Oxidation====

John d: /* Thermal Oxidation Recipes */ process limits, recipes paosted from tool page

2024-10-24T21:58:33Z

Thermal Oxidation Recipes: process limits, recipes paosted from tool page

@@ Line 1: / Line 1: @@
 ==[[Tube Furnace (Tystar 8300)|Tystar 8300]]==
 ===Thermal Oxidation of Silicon - Calculating Oxidation Times===
 Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.
@@ Line 77: / Line 104: @@
 [[Category:Processing]]
 {{todo|Add starting recipes for RTP}}

John d: /* Tystar 8300 */ added wafer cleaning

2024-01-30T23:24:46Z

Tystar 8300: added wafer cleaning

← Older revision		Revision as of 23:24, 30 January 2024
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	A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator].		A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator].

			=== Wafer Cleaning ===
			For Tube #2, Silicon wafer cleaning, the following process is recommended:

			# If brand new wafers, they should be already relatively clean. Otherwise Acetone/ISO clean might be needed to remove particles - optional
			# Use [[Wet Benches#Wafer Toxic Corrosive Benches\|Bay 4 toxic corrosive bench]] to submerge wafers for 20min in PureStrip @ 60°C. Replenish if needed, since PureStrip degrades after a few days at 60°C.
			# QDR - rinse.
			# Transport to Bay 5 HF bench (keep in water - optional) - use Chemical Transport Container.
			# Submerge in HF for 10min.
			# Rinse in DI 3x at HF bench. Pure HF goes down special drain, while rinse water can go down normal drain.
			# Dry with Nitrogen gun OR SRD "Spin Rinse Dryer" at Bay 5.
			# Ready to load into Tystar quartz boats, run recipe on Tystar.

	===Thermal Oxidation Recipes===		===Thermal Oxidation Recipes===

John d: /* Thermal Oxidation of Silicon - Calculating Oxidation Times */ link to BYU ox calc

2022-07-08T18:09:43Z

Thermal Oxidation of Silicon - Calculating Oxidation Times: link to BYU ox calc

← Older revision		Revision as of 18:09, 8 July 2022
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	Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy.		Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy.

			A simpler but less accurate oxidation calculator can be found at the [https://cleanroom.byu.edu/oxidetimecalc/ BYU Thermal Oxidation Calculator].

	===Thermal Oxidation Recipes===		===Thermal Oxidation Recipes===

John d: /* Bonding with Intermediate layer */ link to Logitech recipes page

2022-04-20T06:14:55Z

Bonding with Intermediate layer: link to Logitech recipes page

← Older revision		Revision as of 06:14, 20 April 2022
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	==[[Tube Furnace (Tystar 8300)\|Tystar 8300]]==		==[[Tube Furnace (Tystar 8300)\|Tystar 8300]]==

	=== Thermal Oxidation of Silicon - Calculating Oxidation Times ===		===Thermal Oxidation of Silicon - Calculating Oxidation Times===
	Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.		Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.
	Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.		Please see the [[Calculators + Utilities]] page for links to these oxidation calculators.
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	Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy.		Using the [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr. "Advanced Silicon Thermal Oxide Thickness Calculator"], we have determined the following simulation parameters (“partial pressure” in particular) to predict oxidation times. Please note, however, that doping level, impurity concentration and other factors can alter these calibrations, so you may need to calibrate the ''Partial Pressure'' yourself if you need higher accuracy.

	=== Thermal Oxidation Recipes ===		===Thermal Oxidation Recipes===

	==== 1050°C Dry Oxidation ====		====1050°C Dry Oxidation====

	* Recipe Name: '''''DRY1050'''''		*Recipe Name: '''''DRY1050'''''
	* Tube #2 for Cleaned Silicon Only
	* Tube #3 for ~~processed silicon or~~ ~~other~~ ~~anneals.~~		*Tube #2 for Cleaned Silicon Only
			*Tube #3 for processed silicon or other anneals.

		⚫	=====Simulation Parameters=====

		⚫	*Partial Pressure = 1.12 (best fit to measured data below)
		⚫	*<100>, 1050°C, 10Å Native Oxide, no dopants

⚫	===== Simulation Parameters =====
⚫	* Partial Pressure = 1.12 (best fit to measured data below)
⚫	* <100>, 1050°C, 10Å Native Oxide, no dopants
	[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png\|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.\|none\|thumb\|300x300px\|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]		[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png\|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.\|none\|thumb\|300x300px\|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]

	==== 1050°C Wet Oxidation ====		====1050°C Wet Oxidation====

	* Recipe Name: '''''WET1050'''''		*Recipe Name: '''''WET1050'''''
	* Tube #2 for Cleaned Silicon Only
	* Tube #3 for ~~processed silicon or~~ ~~other~~ ~~anneals.~~		*Tube #2 for Cleaned Silicon Only
			*Tube #3 for processed silicon or other anneals.

		⚫	=====Simulation Parameters=====

		⚫	*Partial Pressure = 1.09 (best fit to measured data below)
		⚫	*<100>, 1050°C, 10Å Native Oxide, no dopants

⚫	===== Simulation Parameters =====
⚫	* Partial Pressure = 1.09 (best fit to measured data below)
⚫	* <100>, 1050°C, 10Å Native Oxide, no dopants
	{\|		{\|
	![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png\|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.\|none\|thumb\|300x300px\|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]		![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png\|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.\|none\|thumb\|300x300px\|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]
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	\|}		\|}

	==== AlGaAs Oxidation ====		====AlGaAs Oxidation====
	A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.		A recipe is available on Tube #1 for thermal oxidation of AlGaAs layers, at much lower temperatures than Tubes #2 & #3. There are special procedures for running this lower-temp. oxidation at shorter times, please contact [[Tony Bosch]] or the NanoFab process Group for more information.

	==Wafer Substrate Bonding==		==Wafer Substrate Bonding==

	=== Direct Bonding ===		===Direct Bonding===
	Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)\|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing\|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)\|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)\|Blue M oven]] or HeraTherm oven.		Numerous research groups perform direct wafer bonding (of various materials) using either the [[Wafer Bonder (SUSS SB6-8E)\|Suss Wafer Bonder]], or a custom graphite fixture in conjunction with any one of [[Thermal Processing\|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)\|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)\|Blue M oven]] or HeraTherm oven.

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	The [[Plasma Activation (EVG 810)\|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)\|Goniometer]] allow for surface prep/inspection prior to bonding.		The [[Plasma Activation (EVG 810)\|EVG Plasma Activation]] system and [[Goniometer (Rame-Hart A-100)\|Goniometer]] allow for surface prep/inspection prior to bonding.

	=== Bonding with Intermediate layer ===		===Bonding with Intermediate/adhesive layer===
	The [[Wafer Bonder (Logitech WBS7)\|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax intermediate layer. Please see [[~~Don~~ ~~Freeborn~~]] for recipes.		The [[Wafer Bonder (Logitech WBS7)\|Logitech Bonder]] allows wafer-bonding with a CrystalBond wax or other intermediate layer, while applying pressure to the top surface to improve uniform wax distribution. Please see the '''''Recipes > Packaging > [[Packaging Recipes#Wafer Bonder .28Logitech WBS7.29\|<u>Logitech Bonder</u>]]''''' page for recipes.

	== [[Tube Furnace AlGaAs Oxidation (Lindberg)]] ==		==[[Tube Furnace AlGaAs Oxidation (Lindberg)]]==
	Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.		Oxidation of AlGaAs (high-Aluminum content >90%) is performed in this furnace, at temperatures between 200°C → 500°C.

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	Recipes are available, please ask the NanoFab Process group staff.		Recipes are available, please ask the NanoFab Process group staff.

	== [[Rapid Thermal Processor (SSI Solaris 150)]] ==		==[[Rapid Thermal Processor (SSI Solaris 150)]]==
	[[Category:Processing]]		[[Category:Processing]]
	{{todo\|Add starting recipes for RTP}}		{{todo\|Add starting recipes for RTP}}

John d: /* Tystar 8300 */

2021-02-02T01:11:56Z

Tystar 8300

← Older revision		Revision as of 01:11, 2 February 2021
Line 17:		Line 17:
	* Partial Pressure = 1.12 (best fit to measured data below)		* Partial Pressure = 1.12 (best fit to measured data below)
	* <100>, 1050°C, 10Å Native Oxide, no dopants		* <100>, 1050°C, 10Å Native Oxide, no dopants
	[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png\|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.\|none\|thumb\|300x300px\|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only.''']]		[[File:TyStar_Thermal_Oxidations_-_DryOx_1050°C_2018-04-09.png\|alt=plot of Measurements and Curve-Fitting for 1050°C Dry oxidations.\|none\|thumb\|300x300px\|'''Measurements and Curve-Fitting for 1050°C Dry oxidations. Note: three data points only. ''(Demis D. John, 2017-12)''''']]

	==== 1050°C Wet Oxidation ====		==== 1050°C Wet Oxidation ====
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	* <100>, 1050°C, 10Å Native Oxide, no dopants		* <100>, 1050°C, 10Å Native Oxide, no dopants
	{\|		{\|
	![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png\|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.\|none\|thumb\|300x300px\|Measurements and Curve-Fitting for 1050°C Wet oxidations.]]		![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09.png\|alt=plot of Measurements and Curve-Fitting for 1050°C Wet oxidations.\|none\|thumb\|300x300px\|Measurements and Curve-Fitting for 1050°C Wet oxidations. '''''(Demis D. John, 2017-12)''''']]
	![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png\|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.\|none\|thumb\|300x300px\|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]		![[File:TyStar_Thermal_Oxidations_-_WetOx_1050°C_2018-04-09_zoom.png\|alt=plot of Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.\|none\|thumb\|300x300px\|Zoom-in on Measurements and Curve-Fitting for 1050°C Wet oxidations.]]
	\|}		\|}