Unaxis wafer coating procedure - Revision history

Biljana: /* Unaxis SiO2 Low Dep. Rate @250C deposition */

2024-08-13T19:06:34Z

Unaxis SiO2 Low Dep. Rate @250C deposition

Biljana: Gain 4 added

2024-08-13T18:56:26Z

Gain 4 added

Show changes

John d: typos in units (nm/µm/mm), minor formatting

2020-08-13T04:29:25Z

typos in units (nm/µm/mm), minor formatting

Show changes

John d: link to recipes page

2020-07-16T07:20:47Z

link to recipes page

← Older revision		Revision as of 07:20, 16 July 2020
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	=== Important Notes ===		=== Important Notes ===
	* Maximum 0.5µm of deposition prior to chamber cleaning, in order to maintain low particle counts.		* Maximum 0.5µm of deposition prior to chamber cleaning, in order to maintain low particle counts.
			* See the [[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29\|'''ICP-PECVD Unaxis Recipes''' page]] for thin-film properties of each of the following recipes.
	* We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition.		* We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition.
	** If you note abnormally high particle counts (>200), run chamber clean/season and retry. If particle counts are still high, notify the [[ICP-PECVD (Unaxis VLR)\|tool supervisor]].		** If you note abnormally high particle counts (>200), run chamber clean/season and retry. If particle counts are still high, notify the [[ICP-PECVD (Unaxis VLR)\|tool supervisor]].
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	* For new recipes (as of Dec. 2019), users may '''only edit <u>Deposition Time</u>''', no other recipe modifications or customizations are permitted without staff approval.		* For new recipes (as of Dec. 2019), users may '''only edit <u>Deposition Time</u>''', no other recipe modifications or customizations are permitted without staff approval.

	=== Unaxis SiO2 ~~LDR~~ @250C deposition ===		=== Unaxis SiO2 Low Dep. Rate @250C deposition ===
	a) Prepare wafers:		a) Prepare wafers:

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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	=== Unaxis SiO2 ~~HDR~~ @250°C deposition ===		=== Unaxis SiO2 High Dep Rate 250°C deposition ===
	a) Prepare wafers:		a) Prepare wafers:

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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	=== Unaxis SiN @250°C deposition ===		=== Unaxis SiN 250°C deposition ===
	a) Prepare wafers:		a) Prepare wafers:

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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	=== Unaxis SiN LS @250°C deposition ===		=== Unaxis SiN Low-Stress 250°C deposition ===
	a) Prepare wafers:		a) Prepare wafers:

John d: /* Unaxis SiN LS @250°C deposition */ unbold

2020-07-16T07:18:34Z

Unaxis SiN LS @250°C deposition: unbold

← Older revision		Revision as of 07:18, 16 July 2020
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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	=== ~~'''~~Unaxis SiN LS @250°C~~'''~~ ~~'''~~deposition~~'''~~ ===		=== Unaxis SiN LS @250°C deposition ===
	a) Prepare wafers:		a) Prepare wafers:

John d: only edit dep. time

2020-07-16T07:17:17Z

only edit dep. time

← Older revision		Revision as of 07:17, 16 July 2020
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	* We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition.		* We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition.
	** If you note abnormally high particle counts (>200), run chamber clean/season and retry. If particle counts are still high, notify the [[ICP-PECVD (Unaxis VLR)\|tool supervisor]].		** If you note abnormally high particle counts (>200), run chamber clean/season and retry. If particle counts are still high, notify the [[ICP-PECVD (Unaxis VLR)\|tool supervisor]].
			** You must measure particle count wafers '''before''' and after the deposition. See the procedures on the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan page]].
			* For new recipes (as of Dec. 2019), users may '''only edit <u>Deposition Time</u>''', no other recipe modifications or customizations are permitted without staff approval.

	=== ~~'''1.~~ Unaxis SiO2 LDR @250C deposition~~'''~~ ===		=== Unaxis SiO2 LDR @250C deposition ===
	a) Prepare wafers:		a) Prepare wafers:

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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	=== ~~'''2.~~ Unaxis SiO2 HDR @250°C deposition~~'''~~ ===		=== Unaxis SiO2 HDR @250°C deposition ===
	a) Prepare wafers:		a) Prepare wafers:

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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	=== ~~'''3.~~ Unaxis SiN @250°C deposition~~'''~~ ===		=== Unaxis SiN @250°C deposition ===
	a) Prepare wafers:		a) Prepare wafers:

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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	=== 4. '''Unaxis SiN LS @250°C''' '''deposition''' ===		=== '''Unaxis SiN LS @250°C''' '''deposition''' ===
	a) Prepare wafers:		a) Prepare wafers:

John d: notes about 0.5µm max. dep, and particle counting

2020-07-16T07:13:16Z

notes about 0.5µm max. dep, and particle counting

← Older revision		Revision as of 07:13, 16 July 2020
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			=== Important Notes ===
			* Maximum 0.5µm of deposition prior to chamber cleaning, in order to maintain low particle counts.
			* We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition.
			** If you note abnormally high particle counts (>200), run chamber clean/season and retry. If particle counts are still high, notify the [[ICP-PECVD (Unaxis VLR)\|tool supervisor]].

	=== '''1. Unaxis SiO2 LDR @250C deposition''' ===		=== '''1. Unaxis SiO2 LDR @250C deposition''' ===
	a) Prepare wafers:		a) Prepare wafers:

Biljana: /* a) Prepare wafers: */

2020-07-02T19:03:26Z

a) Prepare wafers:

← Older revision		Revision as of 19:03, 2 July 2020
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	=== 4. '''Unaxis SiN LS @250°C''' '''deposition''' ===		=== 4. '''Unaxis SiN LS @250°C''' '''deposition''' ===
		⚫	a) Prepare wafers:

⚫	~~===~~ a) Prepare wafers: ~~===~~
	· Regular 4 " Si wafer ~500nm think for seasoning		· Regular 4 " Si wafer ~500nm think for seasoning

Biljana: /* 1. Unaxis deposition - 300nm of SiO2 LDR film @250°C */

2020-07-02T19:02:52Z

1. Unaxis deposition - 300nm of SiO2 LDR film @250°C

← Older revision		Revision as of 19:02, 2 July 2020
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	=== '''1. Unaxis ~~deposition - 300nm of~~ SiO2 LDR ~~film~~ ~~@250°C~~''' ===		=== '''1. Unaxis SiO2 LDR @250C deposition''' ===
	a) Prepare wafers:		a) Prepare wafers:

Biljana at 19:01, 2 July 2020

2020-07-02T19:01:48Z

← Older revision		Revision as of 19:01, 2 July 2020
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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	'''2. Unaxis SiO2 HDR @250°C deposition'''		=== '''2. Unaxis SiO2 HDR @250°C deposition''' ===

	a) Prepare wafers:		a) Prepare wafers:

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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	'''3. Unaxis SiN @250°C deposition'''		=== '''3. Unaxis SiN @250°C deposition''' ===

	a) Prepare wafers:		a) Prepare wafers:

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	e) Unload wafers when all runs are finished.		e) Unload wafers when all runs are finished.

	4. '''Unaxis SiN LS @250°C''' '''deposition'''		=== 4. '''Unaxis SiN LS @250°C''' '''deposition''' ===

⚫	a) Prepare wafers:

		⚫	=== a) Prepare wafers: ===
	· Regular 4 " Si wafer ~500nm think for seasoning		· Regular 4 " Si wafer ~500nm think for seasoning

← Older revision		Revision as of 19:06, 13 August 2024
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	*See the [[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29\|'''ICP-PECVD Unaxis Recipes''' page]] for thin-film properties of each of the following recipes.		*See the [[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29\|'''ICP-PECVD Unaxis Recipes''' page]] for thin-film properties of each of the following recipes.
	*We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition.		*We highly recommend using the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan particle counter]] to monitor particle counts on look-ahead wafers prior to deposition.
	**You must measure particle count wafers '''before''' and '''after''' the deposition. See the procedures on the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan page]].		**You must measure particle count on wafers '''before''' and '''after''' the deposition. We usually run "SiO2 HDR-Std" recipe. See the procedures on the [[Surface Analysis (KLA/Tencor Surfscan)\|Surfscan page]].
	**If you note abnormally high particle counts for G4 (>200):		**If you note abnormally high particle counts for G4 (>200):
	***Run chamber clean		***Run chamber clean
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	a) Prepare wafers:		a) Prepare wafers:

	*Regular 4 " Si wafer ~500µm thick for seasoning		*Regular 4 " Si wafer ~500µm thick for seasoning [W2-coat, stored in separate box for Unaxis Seasoning, chase 6]
	*Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)		*Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)
	*Thick 4" Si wafer~(0.8-1mm) for cleaning		*Thick 4" AlN wafer~(0.8-1mm) for cleaning [shiny side down]

	b) Load all 3 wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.		b) Load all 3 wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
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	*Seasoning recipe name: '''SiO2 seasoning''', '''t=2min'''		*Seasoning recipe name: '''SiO2 seasoning''', '''t=2min'''
	**There is '''only one SiO2 seasoning recipe''' that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.		**There is '''only one SiO2 seasoning recipe''' that is used for both LDR and HDR depositions. The goal in this step is to prepare the chamber and deposit ~200nm of SiO2 on walls.
	*Deposition recipe name: '''SiO2 LDR 250°C, t=~~780 sec~~'''		*Deposition recipe name: '''SiO2 LDR 250°C, t=780sec'''
	*Cleaning recipe name: '''Post dep PD''', '''t=900sec'''		*Cleaning recipe name: '''Post dep PD''', '''t=900sec'''

	d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.		d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end).

	*You should monitor process at the very beginning to make sure there are no any issues with the run.		*You should monitor process at the very beginning to make sure there are no any issues with the run.
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	a) Prepare wafers:		a) Prepare wafers:

	*Regular 4 " Si wafer ~500µm thick for seasoning		*Regular 4 " Si wafer ~500µm thick for seasoning [W1-coat, stored in separate box for Unaxis Seasoning, chase 6]
	*Your substrate for deposition (if smaller than 4", needs to be loaded on a Si carrier wafer)		*Your substrate for deposition (if smaller than 4", needs to be loaded on a Si carrier wafer)
	*Thick 4" Si wafer ~(0.8-1mm) for cleaning		*Thick 4" AlN wafer~(0.8-1mm) for cleaning [shiny side down]

	b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.		b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
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	*Cleaning recipe name: '''Post dep PD''', '''t=900sec'''		*Cleaning recipe name: '''Post dep PD''', '''t=900sec'''

	d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.		d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end).

	*You should monitor process at the very beginning to make sure there are no any issues with the run.		*You should monitor process at the very beginning to make sure there are no any issues with the run.
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	a) Prepare wafers:		a) Prepare wafers:

	*Regular 4 " Si wafer ~500µm thick for seasoning		*Regular 4 " Si wafer ~500µm thick for seasoning [W3-coat, stored in separate box for Unaxis Seasoning, chase 6]
	*Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)		*Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)
	*Thick 4" Si wafer ~(0.8-1mm) for cleaning		*Thick 4" AlN wafer~(0.8-1mm) for cleaning [shiny side down]

	b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.		b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
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	*Seasoning recipe name: '''SiN seasoning''', '''t=5min'''		*Seasoning recipe name: '''SiN seasoning''', '''t=5min'''
	*Deposition recipe name: '''SiN 250°C, t=~~480 sec~~'''		*Deposition recipe name: '''SiN 250°C, t=480sec'''
	*Cleaning recipe name: '''Post dep PD,''' '''t=1500sec'''		*Cleaning recipe name: '''Post dep PD,''' '''t=1500sec'''

	d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.		d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end).

	*You should monitor process at the very beginning to make sure there are no any issues with the run.		*You should monitor process at the very beginning to make sure there are no any issues with the run.
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	a) Prepare wafers:		a) Prepare wafers:

	*Regular 4 " Si wafer ~500µm thick for seasoning		*Regular 4 " Si wafer ~500µm thick for seasoning [W4-coat, stored in separate box for Unaxis Seasoning, chase 6]
	*Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)		*Your substrate for deposition (if smaller than 4", needs to be loaded on an Si carrier wafer)
	*Thick 4" Si wafer ~(0.8-1mm) for cleaning		*Thick 4" AlN wafer~(0.8-1mm) for cleaning [shiny side down]

	b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.		b) Load all wafers in a cassette, making sure major flat is facing outside (toward you). Try to align flats for all three wafers.
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	*Seasoning recipe name: '''SiN seasoning''', '''t=2min'''		*Seasoning recipe name: '''SiN seasoning''', '''t=2min'''
	*Deposition recipe name: '''SiN LS''' '''250°C''', '''t=~~180 sec~~'''		*Deposition recipe name: '''SiN LS''' '''250°C''', '''t=180sec'''
	*Cleaning recipe name: '''Post dep PD,''' '''t=1500sec'''		*Cleaning recipe name: '''Post dep PD,''' '''t=1500sec'''

	d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end.		d) Run the job (first run seasoning, then deposition on your substate and cleaning at the end).

	*You should monitor process at the very beginning to make sure there are no any issues with the run.		*You should monitor process at the very beginning to make sure there are no any issues with the run.