Wafer Coating Process Traveler - Revision history

Biljana: /* Standard Low Stress Deposition */

2025-02-19T23:12:58Z

Standard Low Stress Deposition

← Older revision		Revision as of 23:12, 19 February 2025
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	#*Log out		#*Log out

	=== Standard Low Stress Deposition ===		=== Standard Low Stress Nitride Deposition ===

	==== "STD LS-Si3N4 v4" ====		==== "STD LS-Si3N4 v4" ====

Biljana: /* "STD LS-Si3N4 v4" */

2025-02-19T23:12:33Z

"STD LS-Si3N4 v4"

← Older revision		Revision as of 23:12, 19 February 2025
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	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning
	#*Wipe sidewall first with DI water, followed by IPA.		#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
	#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [one minute clean for one minute [coat+deposition] time.		#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [one minute clean for one minute [coat+deposition] time.
	#*Log out		#*Log out
Line 28:		Line 28:
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning
	#*Wipe sidewall first with DI water, followed by IPA.		#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
	#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].		#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
	#*Log out		#*Log out
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	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].		#*Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
	#*Make sure Loop is set correctly for HF/LF Process Step ~~(Instructions in here: https://wiki.nanofab.ucsb.edu/w/images/6/68/PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf)~~		#*Make sure Loop is set correctly for HF/LF Process Step
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning
	#*Wipe sidewall first with DI water, followed by IPA.		#*Wet clean: Wipe sidewall first with DI water, followed by IPA (Do wet clean only if [coat+deposition] time was >29min]).
	#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].		#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
	#*Log out		#*Log out

Biljana: /* Standard Low Stress Deposition */

2025-02-19T23:09:58Z

Standard Low Stress Deposition

← Older revision		Revision as of 23:09, 19 February 2025
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	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].		#*Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
	#*Make sure Loop is set correctly for HF/LF Process Step ( ~~instructions~~ in here:		#*Make sure Loop is set correctly for HF/LF Process Step (Instructions in here: https://wiki.nanofab.ucsb.edu/w/images/6/68/PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf)
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning

Biljana: /* STD SiO2 */

2025-02-19T23:09:00Z

STD SiO2

← Older revision		Revision as of 23:09, 19 February 2025
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	=== Standard Oxide Deposition ===		=== Standard Oxide Deposition ===

	==== STD ~~SiO2~~ ====		==== STD SiO v2 ====
	#Log in to Advanced PECVD #2		#Log in to Advanced PECVD #2
	#Seasoning		#Seasoning

Biljana: /* Standard Low Stress Deposition */ Updating the names of recipes

2025-02-19T23:08:27Z

Standard Low Stress Deposition: Updating the names of recipes

← Older revision		Revision as of 23:08, 19 February 2025
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	#Log in to Advanced PECVD #2		#Log in to Advanced PECVD #2
	#Seasoning		#Seasoning
	#*Load the seasoning recipe (STD ~~SiO2~~), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.		#*Load the seasoning recipe (STD SiO v2). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
	#Deposition		#Deposition
	#*Vent the chamber and load the substrate (place it in the center of platen). You can place ~~small~~ ~~pieces~~ around the wafer to protect it from moving.		#*Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD ~~SiO2~~), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].		#*Load the deposition recipe (STD SiO v2). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning
	#*Wipe sidewall first with DI water, followed by IPA.		#*Wipe sidewall first with DI water, followed by IPA.
	#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.		#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [one minute clean for one minute [coat+deposition] time.
	#*Log out		#*Log out
	=== Standard Nitride Deposition ===		=== Standard Nitride Deposition ===

	==== STD ~~Nitride2~~ ====		==== "STD Si3N4 v3" ====
	#Log in to Advanced PECVD #2		#Log in to Advanced PECVD #2
	#Seasoning		#Seasoning
	#*Load the seasoning recipe (STD ~~Nitride2~~), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.		#*Load the seasoning recipe (STD Si3N4 v3). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
	#Deposition		#Deposition
	#*Vent the chamber and load the substrate (place it in the center of platen). You can place ~~small~~ ~~pieces~~ around the wafer to protect it from moving.		#*Vent the chamber and load the substrate (place it in the center of platen). You can place glass slides around the wafer to protect it from moving.
	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD ~~Nitride2~~), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].		#*Load the deposition recipe (STD Si3N4 v3). Edit deposition time to desired time and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning
	#*Wipe sidewall first with DI water, followed by IPA.		#*Wipe sidewall first with DI water, followed by IPA.
	#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.		#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
	#*Log out		#*Log out

	=== Standard Low Stress Deposition ===		=== Standard Low Stress Deposition ===

	==== STD LS ~~Nitride2~~ ====		==== "STD LS-Si3N4 v4" ====
	#Log in to Advanced PECVD #2		#Log in to Advanced PECVD #2
	#Seasoning		#Seasoning
	#*Load the seasoning recipe (STD LS ~~Nitride2~~), and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.		#*Load the seasoning recipe (STD LS-Si3N4 v4). Edit deposition time to 10min and run it. The goal of this step is to coat oxide on chamber walls and prepare it for deposition.
	#Deposition		#Deposition
	#*Vent the chamber and load the substrate (place it in the center of platen). You can place small ~~pieces~~ ~~around~~ the wafer to protect it from moving.		#*Vent the chamber and load the substrate (place it in the center of platen). You can place small glass slides round the wafer to protect it from moving.
	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD LS ~~Nitride2~~), ~~and~~ ~~run~~ ~~it.~~ ~~Deposition~~ time is ~~variable~~. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].		#*Load the deposition recipe (STD LS-Si3N4 v4). Edit deposition time to desired time and run it. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
			#*Make sure Loop is set correctly for HF/LF Process Step ( instructions in here:
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning
	#*Wipe sidewall first with DI water, followed by IPA.		#*Wipe sidewall first with DI water, followed by IPA.
	#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.		#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning [(coat time+deposition time)/7].
	#*Log out		#*Log out

	#

Biljana at 23:54, 22 April 2020

2020-04-22T23:54:08Z

← Older revision		Revision as of 23:54, 22 April 2020
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	#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.		#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_2_~~(Advanced_Vacuum)~~ historical data].		#*Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning

Biljana: link to recipes

2020-04-22T23:53:27Z

link to recipes

← Older revision		Revision as of 23:53, 22 April 2020
Line 10:		Line 10:
	#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.		#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/~~PECVD_Recipes#~~PECVD_2_~~.28Advanced_Vacuum.29~~ historical data].		#*Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_2_(Advanced_Vacuum) historical data].
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning

Biljana at 23:52, 22 April 2020

2020-04-22T23:52:13Z

← Older revision		Revision as of 23:52, 22 April 2020
Line 10:		Line 10:
	#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.		#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/~~Vacuum_Deposition_Recipes~~ historical data].		#*Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning
Line 25:		Line 25:
	#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.		#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD Nitride2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/~~Vacuum_Deposition_Recipes~~ historical data].		#*Load the deposition recipe (STD Nitride2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning
Line 41:		Line 41:
	#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.		#*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
	#*Pump down.		#*Pump down.
	#*Load the deposition recipe (STD LS Nitride2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/~~Vacuum_Deposition_Recipes~~ historical data].		#*Load the deposition recipe (STD LS Nitride2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_2_.28Advanced_Vacuum.29 historical data].
	#*Unload the wafer.		#*Unload the wafer.
	#Cleaning		#Cleaning

Biljana: /* STD SiO2 */

2020-04-22T23:50:50Z

STD SiO2

@@ Line 10: / Line 10: @@
 #*Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
 #*Pump down.
-#*Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/Vacuum_Deposition_Recipes historical data].
+#*Load the deposition recipe (STD SiO2), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/Vacuum_Deposition_Recipes historical data].
 #*Unload the wafer.
 #Cleaning
@@ Line 19: / Line 19: @@
 ==== STD Nitride2 ====
 === Standard Low Stress Deposition  ===
 ==== STD LS Nitride2 ====

Biljana: /* STD SiO2 */

2020-04-22T23:48:55Z

STD SiO2

← Older revision		Revision as of 23:48, 22 April 2020
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	There are three standard recipes : STD SiO2, STD Nitride2, and STD LS Nitride2 at 300C. Instructions bellow explain how to run each of the recipes ( seasoning, deposition, cleaning)		There are three standard recipes : STD SiO2, STD Nitride2, and STD LS Nitride2 at 300C. Instructions bellow explain how to run each of the recipes ( seasoning, deposition, cleaning)

	=== ~~STD~~ ~~SiO2~~ ===		=== Standard Oxide Deposition ===

	==== ~~Standard~~ ~~oxide deposition~~ ====		==== STD SiO2 ====
	#Log in to Advanced PECVD #2		#Log in to Advanced PECVD #2
	#Seasoning		#Seasoning
Line 16:		Line 16:
	#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.		#*Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
	#*Log out		#*Log out
	=== ~~STD~~ ~~Nitride2~~ ===		=== Standard Nitride Deposition ===

	==== ~~Standard~~ ~~nitride deposition~~ ====		==== STD Nitride2 ====

	=== ~~STD~~ LS ~~Nitride2~~ ===		=== Standard Low Stress Deposition ===

	==== ~~Standard~~ ~~low~~ ~~stress nitride deposition~~ ====		==== STD LS Nitride2 ====